JP2008251934A - Manufacturing method of semiconductor chip - Google Patents

Manufacturing method of semiconductor chip Download PDF

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JP2008251934A
JP2008251934A JP2007092799A JP2007092799A JP2008251934A JP 2008251934 A JP2008251934 A JP 2008251934A JP 2007092799 A JP2007092799 A JP 2007092799A JP 2007092799 A JP2007092799 A JP 2007092799A JP 2008251934 A JP2008251934 A JP 2008251934A
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wafer
ultraviolet
adhesive layer
ultraviolet curable
sensitive adhesive
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Atsushi Maeda
淳 前田
Keiko Kano
圭子 狩野
Masaharu Ito
雅春 伊藤
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Lintec Corp
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Lintec Corp
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<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor chip that can suppress production of adhesive residues, has unevenness trackability on a waver circuit surface, and the like, and can prevent grinding water etc., from reaching the circuit surface of wafer during grinding. <P>SOLUTION: While the circuit surface of the wafer is covered with an ultraviolet-curing type wafer protective taper 12, a wafer reverse surface is ground, and the wafer is divided into many individual chips 20. Then the ultraviolet-curing type wafer protective tape 12 is irradiated with ultraviolet rays to cure an ultraviolet-curing type adhesive layer 16 (curing stage). In the curing stage, the ultraviolet-curing type adhesive layer 16 is cured in an environment, where oxygen concentration is 10% or lower and makes the ultraviolet-curing type wafer protective tape 12 easy to peel off a chip 20, where a portion of the ultraviolet-curing type adhesive layer 16 is prevented from being left at an end, or the like, of the chip 20. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

本発明は、半導体チップの製造方法に関し、さらに詳しくは、半導体ウエハを保護するための保護シートの成分による汚染を防止可能な半導体チップの製造方法に関する。本発明の半導体チップの製造方法は、特に、高密度の配線パターンが形成された極薄の半導体チップ製造に適している。   The present invention relates to a method for manufacturing a semiconductor chip, and more particularly to a method for manufacturing a semiconductor chip capable of preventing contamination by components of a protective sheet for protecting a semiconductor wafer. The method for manufacturing a semiconductor chip of the present invention is particularly suitable for manufacturing an extremely thin semiconductor chip on which a high-density wiring pattern is formed.

半導体ウエハにおいては、表面に回路が形成された後に、ウエハの裏面側に研削加工が施されてウエハの厚さを調整する加工が行われる。研削加工の間、表面に形成された回路面に粘着シートからなる保護シートを貼付し、回路を保護する。このような保護シートにおいては、回路やウエハ本体へのダメージを防止することの他に、粘着剤が剥離後に回路上に残留（糊残り）しないこと、研削くずの洗い流しや冷却のための研削水の回路面への浸入を防止すること、研削後のウエハの厚み精度を充分に保つことが要求される。このような保護シートとして、紫外線硬化型粘着剤を有する粘着シート（例えば特許文献１）を用いることが知られている。   In a semiconductor wafer, after a circuit is formed on the front surface, grinding processing is performed on the back surface side of the wafer to adjust the thickness of the wafer. During the grinding process, a protective sheet made of an adhesive sheet is attached to the circuit surface formed on the surface to protect the circuit. In such a protective sheet, in addition to preventing damage to the circuit and the wafer body, the adhesive does not remain on the circuit after being peeled (glue residue), and grinding water is used for washing away grinding and cooling. It is required to prevent the intrusion into the circuit surface and to keep the thickness accuracy of the wafer after grinding sufficiently. As such a protective sheet, it is known to use an adhesive sheet (for example, Patent Document 1) having an ultraviolet curable adhesive.

通常の加工プロセスにおいては、半導体ウエハは、研削工程後のダイシング工程によりチップ化される。近年の半導体製造工程においては、半導体ウエハの径が大きくなるとともに厚みの極薄化が進んでいることから、半導体ウエハが極めて破損しやすくなり、研削工程後のウエハの取り扱いが困難になってきている。このため、研削工程に先立ちウエハにハーフカットダイシングを行い、研削と同時にウエハをチップ化する先ダイシングプロセス（ＤＢＧプロセス）が有望視されている。ＤＢＧプロセスにおいては、保護シートは、ハーフカットされたウエハの回路面に貼付される（例えば特許文献２）。   In a normal processing process, a semiconductor wafer is formed into chips by a dicing process after a grinding process. In recent semiconductor manufacturing processes, the diameter of semiconductor wafers has become larger and the thickness has been made extremely thin. Therefore, semiconductor wafers are very easily damaged, and handling of the wafers after the grinding process has become difficult. Yes. For this reason, a prior dicing process (DBG process) in which half-cut dicing is performed on the wafer prior to the grinding process and the wafer is chipped simultaneously with grinding is promising. In the DBG process, the protective sheet is attached to the circuit surface of the half-cut wafer (for example, Patent Document 2).

通常プロセスに用いられる保護シートは、研削水の浸入をウエハの外周で防止できる程度にウエハの回路面に密着していれば良い。これに対し、ＤＢＧプロセスでは、研削の途中でウエハがチップ化されるため、用いられる保護シートには、研削水の浸入をチップごとに防止するのに充分なほどの表面への密着性が必要とされている。このように、ウエハの回路面に密着させるために保護シートの粘着性を高めると、剥離後の回路面に粘着剤残渣が多くなる傾向にあることから、紫外線硬化型粘着剤を有する粘着シートが保護シートとして用いられる場合がある（例えば特許文献３）。
特開昭６０−１８９９３８号公報 特開平５−３３５４１１号公報 特開２０００−６８２３７号公報 The protective sheet used in the normal process only needs to be in close contact with the circuit surface of the wafer to the extent that intrusion of grinding water can be prevented at the outer periphery of the wafer. On the other hand, in the DBG process, since the wafer is formed into chips in the middle of grinding, the protective sheet used needs to have sufficient adhesion to the surface to prevent the ingress of grinding water for each chip. It is said that. Thus, when the adhesiveness of the protective sheet is increased in order to adhere to the circuit surface of the wafer, the pressure-sensitive adhesive sheet having an ultraviolet curable pressure-sensitive adhesive tends to increase in the adhesive residue on the circuit surface after peeling. It may be used as a protective sheet (for example, Patent Document 3).
JP 60-189938 A JP-A-5-335411 JP 2000-68237 A

ＤＢＧプロセスにおいては、通常の研削とは異なり、研削中にチップが小さく個片化される。このため、研削工程後に、上記の紫外線硬化型粘着剤を有する紫外線硬化型ウエハ回路保護シート（ＤＢＧ用ＢＧテープ）に紫外線照射を行った後にテープを剥離させた場合であっても、個片化されたチップの端部に粘着剤残渣物が残るという問題が生じ易い。後述するように、上記のチップ端部における粘着剤残渣物は、特に、近年の高密度化されて複雑な回路凹凸が形成されたウエハを研削するための高い凹凸追従性を有する粘着シートを使用した場合や、厚さが１００μｍ以下のような極薄チップ製造時に著しく多く生じている。   In the DBG process, unlike ordinary grinding, the chips are divided into small pieces during grinding. For this reason, even when the tape is peeled off after the UV irradiation is performed on the UV curable wafer circuit protection sheet (DBG BG tape) having the above UV curable adhesive after the grinding step, it is separated into individual pieces. The problem that the adhesive residue remains at the end of the chip is likely to occur. As will be described later, the adhesive residue at the end of the chip uses a pressure-sensitive adhesive sheet having a high unevenness followability for grinding a wafer having a high density and complex circuit unevenness in recent years. In the case of manufacturing such an ultrathin chip having a thickness of 100 μm or less.

半導体部品の形状の変化に伴い、半導体チップの外周には比較的凹凸差のある素子（電極等）が組み込まれることが多くなっているため、狭い領域により大きな凹凸が密集し、チップ外周部への密着が困難となっている。このため、ＤＢＧプロセスに用いる保護シートには、回路への密着性（凹凸追従性）が不足し、研削水が浸入して汚染されるおそれがあり、そこで密着性を向上させるために粘着剤の凝集力を低下させた結果、個片化したチップ端部に粘着剤残渣物が発生する。特に、極薄ウエハを加工する場合には、研削時の応力によって粘着剤が変形し、カーフライン付近、すなわちチップ端部には粘着剤が付着し易い。   As the shape of the semiconductor component changes, elements (electrodes, etc.) having a relatively uneven difference are often incorporated in the outer periphery of the semiconductor chip, so that the large unevenness is concentrated in a narrow area, leading to the outer periphery of the chip. It is difficult to adhere. For this reason, the protective sheet used in the DBG process has insufficient adhesion to the circuit (unevenness followability) and may be contaminated by intrusion of grinding water. As a result of reducing the cohesive force, a pressure-sensitive adhesive residue is generated at the edge of the separated chip. In particular, when processing an ultra-thin wafer, the adhesive is deformed by the stress during grinding, and the adhesive easily adheres to the vicinity of the kerf line, that is, to the end of the chip.

そこで本発明は、複雑な回路凹凸が設けられたウエハの研削時、特に１００μｍ以下の極薄研削時等において上記粘着剤残渣物の発生を抑制可能であり、ウエハ回路面等に対する凹凸追従性があって、研削時の研削水等のウエハ回路面への浸入を防止可能な半導体チップの製造方法を実現することを目的とする。   Therefore, the present invention can suppress the generation of the above adhesive residue when grinding a wafer provided with complicated circuit irregularities, especially when grinding ultra-thin 100 μm or less, etc. An object of the present invention is to realize a semiconductor chip manufacturing method capable of preventing intrusion of grinding water or the like into a wafer circuit surface during grinding.

本発明における半導体チップの製造方法は、半導体回路が形成された回路面に溝を有するウエハに、表面保護シートの紫外線硬化型粘着剤層が前記回路面を覆うように貼着された状態で、前記ウエハの裏面が研削されて前記溝により分割されたチップが形成される半導体チップの製造方法である。そして、酸素濃度が１０％以下の環境において表面保護シートに紫外線を照射して、紫外線硬化型粘着剤層を硬化させる硬化工程を備えることを特徴とする。   In the method for manufacturing a semiconductor chip in the present invention, a wafer having a groove on a circuit surface on which a semiconductor circuit is formed is attached with a UV curable adhesive layer of a surface protection sheet so as to cover the circuit surface. A method of manufacturing a semiconductor chip in which a back surface of the wafer is ground to form a chip divided by the groove. And it is characterized by providing the hardening process which irradiates a surface protection sheet with an ultraviolet-ray in the environment whose oxygen concentration is 10% or less, and hardens an ultraviolet curable adhesive layer.

半導体チップの製造方法においては、硬化した表面保護シートを回路面から剥離する剥離工程をさらに有することが好ましい。   In the manufacturing method of a semiconductor chip, it is preferable to further have a peeling process which peels the hardened surface protection sheet from a circuit surface.

また、硬化工程において、不活性ガス雰囲気下で表面保護シートに紫外線を照射して紫外線硬化型粘着剤層を硬化させることが好ましい。   In the curing step, it is preferable to cure the ultraviolet curable pressure-sensitive adhesive layer by irradiating the surface protective sheet with ultraviolet rays in an inert gas atmosphere.

硬化工程における紫外線硬化前の状態で、紫外線硬化型粘着剤層の貯蔵弾性率が２５℃において０．２０ＭＰａ以下であり、ｔａｎδの値が２５℃において０．２０以上であることが好ましい。また、硬化工程における紫外線硬化後の状態で、紫外線硬化型粘着剤層の貯蔵弾性率が２５℃において０．２０ＭＰａ以上であり、ｔａｎδの値が２５℃において０．６０以下であることが好ましい。   It is preferable that the storage elastic modulus of the UV-curable pressure-sensitive adhesive layer is 0.20 MPa or less at 25 ° C. and the value of tan δ is 0.20 or more at 25 ° C. before UV curing in the curing step. Moreover, it is preferable that the storage elastic modulus of the UV curable pressure-sensitive adhesive layer is 0.20 MPa or more at 25 ° C. and the value of tan δ is 0.60 or less at 25 ° C. after UV curing in the curing step.

硬化工程と剥離工程との間で、チップをピックアップするためのピックアップ用粘着シートをチップの研削面に貼着するピックアップシート貼着工程をさらに有することが望ましい。   It is desirable to further include a pick-up sheet adhering step for adhering a pick-up adhesive sheet for picking up a chip to the ground surface of the chip between the curing step and the peeling step.

本発明によれば、複雑な回路凹凸が設けられたウエハの研削時、特に１００μｍ以下の極薄研削時等において上記粘着剤残渣物の発生を抑制可能であり、ウエハ回路面等に対する凹凸追従性があって、研削時の研削水等のウエハ回路面への浸入を防止可能な半導体チップの製造方法を実現できる。   According to the present invention, it is possible to suppress the occurrence of the above adhesive residue when grinding a wafer provided with complicated circuit irregularities, particularly during ultra-thin grinding of 100 μm or less, etc. Therefore, it is possible to realize a semiconductor chip manufacturing method capable of preventing intrusion of grinding water or the like into the wafer circuit surface during grinding.

具体的には、カーフライン上の粘着剤が酸素阻害によって十分に紫外線硬化されていないことが、上記粘着剤残渣物の発生原因の一つであることを突き止め、表面保護テープへの紫外線照射を酸素濃度が１０％以下の環境において行うことにより、カーフ上の紫外線硬化型粘着剤を完全に硬化させ、チップ端部における粘着剤残渣物の発生を抑制し、高品質な半導体チップの製造方法の実現が可能となった。   Specifically, the fact that the pressure-sensitive adhesive on the kerf line is not sufficiently UV-cured by oxygen inhibition is one of the causes of the above-mentioned pressure-sensitive adhesive residue. By performing it in an environment where the oxygen concentration is 10% or less, the ultraviolet curable adhesive on the kerf is completely cured, the generation of adhesive residue at the chip edge is suppressed, and a method for producing a high-quality semiconductor chip Realization is possible.

本発明における半導体チップの製造方法の実施形態につき説明する。本発明の半導体チップの製造方法は、紫外線硬化型ウエハ保護テープを使用した先ダイシング工程（ＤＢＧ工程）において、紫外線硬化型ウエハ保護テープに対する紫外線照射を、酸素濃度が１０％以下の環境において行うことを特徴とする。   An embodiment of a semiconductor chip manufacturing method according to the present invention will be described. In the method for manufacturing a semiconductor chip of the present invention, in the prior dicing process (DBG process) using an ultraviolet curable wafer protection tape, ultraviolet irradiation to the ultraviolet curable wafer protection tape is performed in an environment having an oxygen concentration of 10% or less. It is characterized by.

以下、本実施形態における、紫外線硬化型ウエハ保護テープを用いたＤＢＧ工程につき説明する。図１は、半導体回路面に溝が設けられた状態のウエハを示す図である。図２は、ウエハの回路面に紫外線硬化型ウエハ保護テープが貼着された状態で実施される研削工程を示す図である。図３は、紫外線硬化型ウエハ保護テープを硬化させる硬化工程を示す図である。図４は、紫外線硬化型ウエハ保護テープを回路面から剥離する剥離工程を示す図であり、図５は、半導体チップのピックアップ工程を示す図である。   Hereinafter, the DBG process using the ultraviolet curable wafer protection tape in this embodiment will be described. FIG. 1 is a view showing a wafer in which a groove is provided on a semiconductor circuit surface. FIG. 2 is a diagram illustrating a grinding process performed in a state where an ultraviolet curable wafer protection tape is adhered to the circuit surface of the wafer. FIG. 3 is a diagram illustrating a curing process for curing the ultraviolet curable wafer protection tape. FIG. 4 is a diagram showing a peeling process for peeling the ultraviolet curable wafer protection tape from the circuit surface, and FIG. 5 is a diagram showing a semiconductor chip pick-up process.

まず、ウエハ１０の表面に半導体回路を形成する。そして、半導体回路が形成された回路面１０Ｓに、ダイシングにより互いに平行な溝１０Ｋ（カーフ）を複数形成する（ダイシング工程）。溝１０Ｋは、ウエハ１０の裏面１０Ｒまでは達しておらず、いずれの溝１０Ｋも、ウエハ１０の厚さ１０Ｔよりも浅い一定の切り込み深さ１０Ｄを有する。なお、図１以下の各図面においては、説明の便宜上、回路面１０Ｓを厚さ１０Ｔ方向に拡大して示している。   First, a semiconductor circuit is formed on the surface of the wafer 10. Then, a plurality of grooves 10K (kerf) parallel to each other are formed by dicing on the circuit surface 10S on which the semiconductor circuit is formed (dicing step). The groove 10K does not reach the back surface 10R of the wafer 10, and any of the grooves 10K has a constant cutting depth 10D shallower than the thickness 10T of the wafer 10. 1 and the subsequent drawings, for convenience of explanation, the circuit surface 10S is shown enlarged in the thickness 10T direction.

次に、紫外線硬化型ウエハ保護テープ１２（表面保護シート）をウエハ１０に貼着する（シート貼着工程・図２参照）。紫外線硬化型ウエハ保護テープ１２は、基材１４と、基材１４の表面上に形成された紫外線硬化型粘着剤層１６とを含む。そして、ウエハ１０の回路面１０Ｓを紫外線硬化型粘着剤層１６が覆うように、紫外線硬化型ウエハ保護テープ１２をウエハ１０に貼付する。   Next, the ultraviolet curable wafer protection tape 12 (surface protection sheet) is adhered to the wafer 10 (see sheet adhesion step, FIG. 2). The ultraviolet curable wafer protection tape 12 includes a base material 14 and an ultraviolet curable pressure-sensitive adhesive layer 16 formed on the surface of the base material 14. Then, the ultraviolet curable wafer protective tape 12 is affixed to the wafer 10 such that the ultraviolet curable adhesive layer 16 covers the circuit surface 10S of the wafer 10.

この状態で、グラインダ１８を用いてウエハ１０の裏面１０Ｒを研削する（研削工程）。この研削工程において、ウエハ１０に貼着させた紫外線硬化型ウエハ保護テープ１２により、回路面１０Ｓは、研削に用いられる研削水の浸入等から保護される。そして、グラインダ１８が溝１０Ｋの底面を越えて所定のチップの厚さまでウエハ１０を研削することにより、ウエハ１０を、溝１０Ｋを境界とした多数のチップ２０に分割、個片化する（図３参照）。このように、個片化されたチップ２０を生じる研削工程において、紫外線硬化型ウエハ保護テープ１２は、隣接するチップ２０同士の接触による破損等も防止する。   In this state, the back surface 10R of the wafer 10 is ground using the grinder 18 (grinding process). In this grinding step, the circuit surface 10S is protected from the intrusion of grinding water used for grinding, etc., by the ultraviolet curable wafer protection tape 12 adhered to the wafer 10. Then, the grinder 18 grinds the wafer 10 beyond the bottom surface of the groove 10K to a predetermined chip thickness, so that the wafer 10 is divided into a large number of chips 20 with the groove 10K as a boundary and separated into individual pieces (FIG. 3). reference). In this way, in the grinding process for producing the separated chips 20, the ultraviolet curable wafer protection tape 12 prevents damage due to contact between adjacent chips 20.

ここで、紫外線硬化型ウエハ保護テープ１２に紫外線を照射し、紫外線硬化型粘着剤層１６を硬化させる（硬化工程）。紫外線硬化型粘着剤層１６中には、後述する光重合開始剤が含まれており、紫外線照射によって光重合開始剤から生じるラジカルに起因した光重合反応により、紫外線硬化型粘着剤層１６は硬化する。   Here, the ultraviolet curable wafer protective tape 12 is irradiated with ultraviolet rays to cure the ultraviolet curable pressure-sensitive adhesive layer 16 (curing step). The ultraviolet curable pressure-sensitive adhesive layer 16 contains a photopolymerization initiator described later, and the ultraviolet curable pressure-sensitive adhesive layer 16 is cured by a photopolymerization reaction caused by radicals generated from the photopolymerization initiator by ultraviolet irradiation. To do.

この硬化工程における紫外線照射に先立って、図３に示すチップ２０を保持した状態にある紫外線硬化型ウエハ保護テープ１２の周囲を強制的に減圧し、窒素ガスを供給する。このように、酸素濃度の低い環境において紫外線硬化型粘着剤層１６を硬化させることにより、紫外線硬化型ウエハ保護テープ１２をチップ２０から容易に剥離可能とし、さらに、後述する糊残り、すなわちチップ２０の端部等に紫外線硬化型粘着剤層１６の一部が残留することが確実に防止される。   Prior to the ultraviolet irradiation in the curing step, the periphery of the ultraviolet curable wafer protection tape 12 holding the chip 20 shown in FIG. 3 is forcibly decompressed and nitrogen gas is supplied. In this way, by curing the ultraviolet curable pressure-sensitive adhesive layer 16 in an environment having a low oxygen concentration, the ultraviolet curable wafer protection tape 12 can be easily peeled off from the chip 20, and further, the adhesive residue described later, that is, the chip 20 It is possible to reliably prevent a part of the ultraviolet curable pressure-sensitive adhesive layer 16 from remaining at the end of the film.

硬化工程においては、例えば、矢印Ａの示すように紫外線硬化型ウエハ保護テープ１２の周囲の空気を除去し、矢印Ｂの示すように窒素ガスを供給し、その後、矢印Ｃの示すように紫外線を照射させる。ここで、密閉容器内で窒素置換、紫外線照射をさせても良いが、窒素雰囲気下で紫外線を照射させることができる限り、紫外線硬化型ウエハ保護テープ１２等が完全に密閉されていることは必要ではなく、矢印Ａの示すように窒素ガスを連続的に供給しながら紫外線を照射しても良い。後述するように、紫外線硬化型ウエハ保護テープ１２の周囲における酸素濃度を１０％以下にできる限り、硬化工程は良好に進むからである。   In the curing step, for example, the air around the ultraviolet curable wafer protection tape 12 is removed as indicated by an arrow A, nitrogen gas is supplied as indicated by an arrow B, and then ultraviolet rays are applied as indicated by an arrow C. Irradiate. Here, nitrogen replacement and ultraviolet irradiation may be performed in a sealed container, but it is necessary that the ultraviolet curable wafer protection tape 12 and the like be completely sealed as long as ultraviolet irradiation can be performed in a nitrogen atmosphere. Instead, as indicated by an arrow A, ultraviolet rays may be irradiated while continuously supplying nitrogen gas. This is because, as will be described later, the curing process proceeds well as long as the oxygen concentration around the ultraviolet curable wafer protection tape 12 can be 10% or less.

なお、紫外線硬化型ウエハ保護テープ１２の周囲における酸素濃度を低下させることができる限り、減圧（真空）下で紫外線を照射しても良く、また、窒素ガス以外の硬化反応に対して不活性なガス、例えばヘリウム、アルゴン、二酸化炭素あるいはこれらの混合ガスの雰囲気下で紫外線を照射しても良い。また、紫外線によって硬化する紫外線硬化型粘着剤層１６の代わりに、他のエネルギー線によって硬化するエネルギー線硬化型粘着剤層を設け、紫外線以外のエネルギー線を照射させても良い。   In addition, as long as the oxygen concentration around the ultraviolet curable wafer protective tape 12 can be reduced, the ultraviolet ray may be irradiated under reduced pressure (vacuum), and it is inert to a curing reaction other than nitrogen gas. You may irradiate an ultraviolet-ray in the atmosphere of gas, for example, helium, argon, a carbon dioxide, or these mixed gas. Further, instead of the ultraviolet ray curable pressure-sensitive adhesive layer 16 that is cured by ultraviolet rays, an energy ray curable pressure-sensitive adhesive layer that is cured by other energy rays may be provided to irradiate energy rays other than ultraviolet rays.

紫外線硬化型粘着剤層１６が硬化した後、チップ２０の研削面２０Ｇにピックアップ用粘着シート２４を貼着する（ピックアップシート貼着工程・図４参照）。ピックアップ用粘着シート２４は、適度な粘着性によりチップ２０の研削面２０Ｇを保持する。そして、既に紫外線硬化型粘着剤層１６が硬化している紫外線硬化型ウエハ保護テープ１２を、矢印Ｄの示すように回路面１０Ｓから剥離する（剥離工程）。   After the ultraviolet curable pressure-sensitive adhesive layer 16 is cured, the pickup pressure-sensitive adhesive sheet 24 is attached to the ground surface 20G of the chip 20 (see pickup sheet attaching step, FIG. 4). The pickup adhesive sheet 24 holds the grinding surface 20G of the chip 20 with appropriate adhesiveness. Then, the ultraviolet curable wafer protective tape 12 in which the ultraviolet curable pressure-sensitive adhesive layer 16 has already been cured is peeled from the circuit surface 10S as indicated by an arrow D (peeling step).

なお、ピックアップシート貼着工程の後に硬化工程を行うことも可能であるが、この場合、ウエハ１０の溝１０Ｋに由来するチップ２０間の隙間２０Ｋ（図４参照）が、紫外線硬化型ウエハ保護テープ１２とピックアップ用粘着シート２４とによってほぼ閉塞されてしまい、窒素ガスが十分に浸透することが阻害され易い。このため、硬化反応の酸素阻害が十分に防止できず、未硬化の紫外線硬化型粘着剤層１６による糊残りが生じ易い。従って、本実施形態のように、硬化工程の後にピックアップシート貼着工程を行い、硬化工程においてはチップ２０間の隙間２０Ｋ（図３参照）の酸素をより多く排除することが好ましい。   In addition, although a hardening process can also be performed after a pick-up sheet sticking process, the clearance gap 20K (refer FIG. 4) between the chips | tips 20 originating in the groove | channel 10K of the wafer 10 is UV curing type wafer protection tape. 12 and the pressure-sensitive adhesive sheet 24 for pick-up are almost blocked, and it is easy to prevent nitrogen gas from permeating sufficiently. For this reason, oxygen inhibition of the curing reaction cannot be sufficiently prevented, and adhesive residue due to the uncured ultraviolet curable pressure-sensitive adhesive layer 16 tends to occur. Therefore, it is preferable to perform a pick-up sheet sticking process after the curing process, as in this embodiment, and to eliminate more oxygen in the gaps 20K (see FIG. 3) between the chips 20 in the curing process.

紫外線硬化型ウエハ保護テープ１２が剥離され、ピックアップ用粘着シート２４によって研削面２０Ｇのみが保持された状態のチップ２０を、ピン２６によってピックアップする（図５参照）。このように、上述のＤＢＧ工程によって、一枚のウエハ１０から多数のチップ２０（半導体チップ）が製造される。   The chip 20 in a state where the ultraviolet curable wafer protection tape 12 is peeled and only the grinding surface 20G is held by the pickup adhesive sheet 24 is picked up by the pins 26 (see FIG. 5). Thus, a large number of chips 20 (semiconductor chips) are manufactured from one wafer 10 by the above-described DBG process.

以下、本実施形態における、紫外線硬化型粘着剤層１６を形成する紫外線硬化型粘着剤の製造方法、および紫外線硬化型粘着剤を用いた実施例と比較例の紫外線硬化型ウエハ保護テープの評価結果等につき説明する。表１は、紫外線硬化型粘着剤の実施例と比較例における配合表である。   Hereinafter, the manufacturing method of the ultraviolet curable adhesive which forms the ultraviolet curable adhesive layer 16 in this embodiment, and the evaluation result of the ultraviolet curable wafer protection tape of the Example using an ultraviolet curable adhesive, and a comparative example Etc. Table 1 is a blending table in Examples and Comparative Examples of UV curable adhesives.

Figure 2008251934
Figure 2008251934

［紫外線硬化型粘着剤の生成方法］
表１に示す紫外線硬化型粘着剤Ａ〜Ｈは、以下のように生成される。ここでは、これらの紫外線硬化型粘着剤のうち、粘着剤Ａおよび粘着剤Ｆの紫外線硬化型粘着剤の生成方法を示す。 [Method for producing UV-curable adhesive]
The ultraviolet curable adhesives A to H shown in Table 1 are produced as follows. Here, the production | generation method of the ultraviolet curing adhesive of the adhesive A and the adhesive F is shown among these ultraviolet curing adhesives.

粘着剤Ａ
主モノマーとしてアクリル酸ブチル（ＢＡ）を７０重量部、官能基含有モノマーとして２−ヒドロキシエチルアクリレート（ＨＥＡ）を３０重量部用いて酢酸エチル溶媒中で溶液重合し、重量平均分子量５００，０００、ガラス転移温度−７℃のアクリル系共重合体を生成した。このアクリル系共重合体の固形分１００重量部と、不飽和基含有化合物（不飽和基含有モノマー）としてのメタクリロイルオキシエチルイソシアナート（ＭＯＩ）８重量部（アクリル系共重合体の官能基であるヒドロキシル基１００当量に対して６６．５当量）とを反応させ、紫外線硬化型アクリル共重合体の酢酸エチル溶液（３０％溶液）を得た。 Adhesive A
Solution polymerization was performed in an ethyl acetate solvent using 70 parts by weight of butyl acrylate (BA) as a main monomer and 30 parts by weight of 2-hydroxyethyl acrylate (HEA) as a functional group-containing monomer, and a weight average molecular weight of 500,000, glass An acrylic copolymer having a transition temperature of -7 ° C was produced. 100 parts by weight of the solid content of this acrylic copolymer and 8 parts by weight of methacryloyloxyethyl isocyanate (MOI) as an unsaturated group-containing compound (unsaturated group-containing monomer) (the functional group of the acrylic copolymer) 66.5 equivalents) with respect to 100 equivalents of hydroxyl groups to obtain an ethyl acetate solution (30% solution) of an ultraviolet curable acrylic copolymer.

この紫外線硬化型アクリル共重合体１００重量部に対し、架橋剤として０．６２５重量部（固形比）の多価イソシアナート化合物ＣＬ（日本ポリウレタン社製・コロネートＬ）と、光重合開始剤ＰＩ（チバ・スペシャルティケミカルズ社製、イルガキュア１８４）３．３重量部（固形比）を混合し、さらにウレタンアクリレート（日本合成化学工業社製、シコウＵＶ−３２１０ＥＡ、重量平均分子量９，０００）を３０重量部（固形比）配合して、紫外線硬化型粘着剤である粘着剤Ａを得た。   With respect to 100 parts by weight of the ultraviolet curable acrylic copolymer, 0.625 parts by weight (solid ratio) of a polyvalent isocyanate compound CL (manufactured by Nippon Polyurethane Co., Ltd., Coronate L) and a photopolymerization initiator PI ( Ciba Specialty Chemicals Co., Ltd., Irgacure 184) 3.3 parts by weight (solid ratio) is mixed, and further urethane acrylate (Nippon Gosei Chemical Co., Ltd., Shiku UV-3210EA, weight average molecular weight 9,000) is 30 parts by weight. (Solid ratio) Blended to obtain a pressure-sensitive adhesive A which is an ultraviolet curable pressure-sensitive adhesive.

粘着剤Ｆ
主モノマーとしてアクリル酸ブチル（ＢＡ）を８５重量部、メタクリル酸メチル（ＭＭＡ）を１０重量部、官能基含有モノマーとして２−ヒドロキシエチルアクリレート（ＨＥＡ）を５重量部用いて酢酸エチル溶媒中で溶液重合し、重量平均分子量５００，０００、ガラス転移温度−７℃のアクリル系共重合体の酢酸エチル溶液（３０％溶液）を得た。このアクリル系共重合体の固形分１００重量部に対し、架橋剤として０．６２５重量部（固形比）の多価イソシアナート化合物ＣＬ（日本ポリウレタン社製・コロネートＬ）と、光重合開始剤ＰＩ（チバ・スペシャルティケミカルズ社製、イルガキュア１８４）３．３重量部（固形比）を混合し、さらにウレタンアクリレート（日本合成化学工業社製、シコウＵＶ−３２１０ＥＡ、重量平均分子量９，０００）を１００重量部（固形比）配合して、紫外線硬化型粘着剤である粘着剤Ｆを得た。 Adhesive F
Solution in ethyl acetate solvent using 85 parts by weight of butyl acrylate (BA) as main monomer, 10 parts by weight of methyl methacrylate (MMA) and 5 parts by weight of 2-hydroxyethyl acrylate (HEA) as functional group-containing monomer Polymerization was performed to obtain an ethyl acetate solution (30% solution) of an acrylic copolymer having a weight average molecular weight of 500,000 and a glass transition temperature of -7 ° C. A polyisocyanate compound CL (manufactured by Nippon Polyurethane Co., Ltd., Coronate L) of 0.625 parts by weight (solid ratio) as a crosslinking agent and a photopolymerization initiator PI with respect to 100 parts by weight of the solid content of this acrylic copolymer. (Ciba Specialty Chemicals Co., Ltd., Irgacure 184) 3.3 parts by weight (solid ratio) were mixed, and further urethane acrylate (Nippon Gosei Chemical Co., Ltd., Shikou UV-3210EA, weight average molecular weight 9,000) was 100 weights. Part (solid ratio) was blended to obtain a pressure-sensitive adhesive F which is an ultraviolet curable pressure-sensitive adhesive.

なお、粘着剤Ｂ〜Ｅ、Ｈについては、紫外線硬化型粘着剤の組成、配合を表１に従って変更した以外は、粘着剤Ａと同様の製造方法で得られた。そして、粘着剤Ｇについては、紫外線硬化型粘着剤の組成、配合を表１に従って変更した以外は、粘着剤Ｆと同様の製造方法で得られた。   The pressure-sensitive adhesives B to E and H were obtained by the same production method as the pressure-sensitive adhesive A except that the composition and composition of the ultraviolet curable pressure-sensitive adhesive were changed according to Table 1. And about the adhesive G, it obtained by the manufacturing method similar to the adhesive F except having changed the composition and mixing | blending of the ultraviolet curable adhesive according to Table 1. FIG.

［紫外線硬化型ウエハ保護テープの製造方法］
次に、実施例１〜８、および比較例１〜８の紫外線硬化型ウエハ保護テープの製造方法を示す。上記の方法で得られた紫外線硬化型粘着剤を、ロールナイフコーターを用いて、乾燥後の塗布厚が４０μｍとなるように、剥離シートとしてシリコーン剥離処理をしたポリエチレンテレフタレートフィルム（厚さ３８μｍ）の剥離処理面に塗布し、１００℃で１分間乾燥した後、基材１４としての厚さ１１０μｍのポリエチレンフィルムと積層し、表２に記載した通りの紫外線硬化型粘着剤層１６を有する実施例１〜８、および比較例１〜８の紫外線硬化型ウエハ保護テープ１２を作成した。 [Production method of UV curable wafer protection tape]
Next, the manufacturing method of the ultraviolet curable wafer protection tape of Examples 1-8 and Comparative Examples 1-8 is shown. Using a roll knife coater, the ultraviolet curable pressure-sensitive adhesive obtained by the above method is a polyethylene terephthalate film (thickness: 38 μm) that has been subjected to silicone release treatment as a release sheet so that the coating thickness after drying is 40 μm. Example 1 having an ultraviolet curable pressure-sensitive adhesive layer 16 as described in Table 2 after being applied to the release-treated surface and dried at 100 ° C. for 1 minute and then laminated with a 110 μm-thick polyethylene film as the base material 14. To 8 and Comparative Examples 1 to 8 were prepared.

次に、実施例と比較例の紫外線硬化型ウエハ保護テープの評価試験につき説明する。まず、紫外線硬化型ウエハ保護テープの評価試験の条件につき説明する。   Next, an evaluation test of the ultraviolet curable wafer protection tapes of Examples and Comparative Examples will be described. First, the conditions of the evaluation test of the ultraviolet curable wafer protection tape will be described.

まず、φ３００ｍｍ、厚さが７６０μｍのミラーウェハに対して、ダイシング装置（ディスコ（株）製、ＤＦＤ６３６１）を用いて２ｍｍ×２ｍｍのサイズに溝の深さ８０μｍまでハーフカットダイシングした。ここでのハーフカット速度は、１００ｍｍ／sである。そのウエハに対して、リンテック社製、ＲＡＤ３５００Ｆ１２を用いて、実施例および比較例の紫外線硬化型ウエハ保護テープを貼付した。   First, half-cut dicing was performed on a mirror wafer having a diameter of 300 mm and a thickness of 760 μm to a size of 2 mm × 2 mm to a groove depth of 80 μm using a dicing apparatus (DFD 6361, manufactured by Disco Corporation). The half-cut speed here is 100 mm / s. Using the RAD3500F12 manufactured by Lintec Corporation, the ultraviolet curable wafer protection tapes of Examples and Comparative Examples were attached to the wafer.

そのウエハを、裏面研磨装置（ディスコ（株）製、ＤＧＰ８７６０）にて厚さが５０μｍとなるまで研削した。さらに、リンテック社製、フルオートマウンターＲＡＤ−２７００にて紫外線照射した。ここでの紫外線の照度は１５０ｍＷ／ｃｍ２、光量は３００ｍＪ／ｃｍ２である。そして、ウエハ裏面にピックアップテープを貼付し、紫外線硬化型ウエハ保護テープを剥離した。このとき、紫外線硬化型ウエハ保護テープの温度が２５℃となるように調整した。また、剥離速度は、２ｍｍ／sであった。 The wafer was ground to a thickness of 50 μm with a backside polishing apparatus (DGP 8760, manufactured by Disco Corporation). Furthermore, ultraviolet irradiation was performed with a fully automatic mounter RAD-2700 manufactured by Lintec Corporation. The illuminance of ultraviolet rays here is 150 mW / cm 2 , and the amount of light is 300 mJ / cm 2 . Then, a pickup tape was attached to the back surface of the wafer, and the ultraviolet curable wafer protective tape was peeled off. At this time, the temperature of the ultraviolet curable wafer protective tape was adjusted to 25 ° C. Moreover, the peeling rate was 2 mm / s.

なお、この紫外線照射による硬化工程は、紫外線硬化型ウエハ保護テープの周囲の酸素濃度が後述する表２に示す値となるように、窒素雰囲気下で実施した。本評価試験においては、実施例および比較例の紫外線硬化型ウエハ保護テープを密閉された空間内に置き、空間内の空気を窒素に置換することにより、酸素濃度を表２に示す値に調整している。   The curing process by ultraviolet irradiation was performed in a nitrogen atmosphere so that the oxygen concentration around the ultraviolet curable wafer protective tape was a value shown in Table 2 described later. In this evaluation test, the oxygen concentration was adjusted to the values shown in Table 2 by placing the ultraviolet curable wafer protection tapes of Examples and Comparative Examples in a sealed space and replacing the air in the space with nitrogen. ing.

次に、紫外線硬化型ウエハ保護テープの評価試験の結果および評価法につき説明する。表２は、紫外線硬化型ウエハ保護テープの評価試験結果を示す表である。この評価試験においては、紫外線硬化型ウエハ保護テープを剥離した後、個片化されたチップ表面上の粘着剤残渣の有無、および研削水の浸入による表面汚染の有無を、キーエンス製、デジタルマイクロスコープＶＨＸ−２００（顕微鏡）を用いて観察し、評価した。   Next, the result of the evaluation test and the evaluation method of the ultraviolet curable wafer protection tape will be described. Table 2 is a table showing the evaluation test results of the ultraviolet curable wafer protection tape. In this evaluation test, after removing the UV curable wafer protection tape, the presence or absence of adhesive residue on the chip surface separated into pieces and the presence or absence of surface contamination due to the ingress of grinding water were determined by Keyence's digital microscope. It observed and evaluated using VHX-200 (microscope).

Figure 2008251934
Figure 2008251934

粘着剤残渣の有無は、以下のように評価した。
◎：ＤＢＧ工程後のウエハ上に、粘着剤残渣物が全く観察されなかった。
○：ＤＢＧ工程後のウエハ上に、実用上問題ない範囲での粘着剤残渣物がごくわずかに観察された。
△：ＤＢＧ工程後のウエハ上に、粘着剤残渣物が観察された。
×：ＤＢＧ工程後のウエハ上に、粘着剤残渣物が多く観察された。 The presence or absence of the adhesive residue was evaluated as follows.
A: No pressure-sensitive adhesive residue was observed on the wafer after the DBG process.
○: A very small amount of adhesive residue was observed on the wafer after the DBG process in a practically acceptable range.
(Triangle | delta): The adhesive residue was observed on the wafer after a DBG process.
X: Many adhesive residue was observed on the wafer after a DBG process.

表２における紫外線硬化型粘着剤層の粘弾性、すなわち、紫外線硬化型粘着剤層を硬化させる前の貯蔵弾性率（Ｇ’）、ｔａｎδ、および紫外線硬化型粘着剤層を硬化させた後の貯蔵弾性率（Ｅ’）、ｔａｎδは、以下の通り測定した。   Viscoelasticity of the UV-curable pressure-sensitive adhesive layer in Table 2, that is, storage modulus (G ′) before curing the UV-curable pressure-sensitive adhesive layer, tan δ, and storage after curing the UV-curable pressure-sensitive adhesive layer The elastic modulus (E ′) and tan δ were measured as follows.

実施例および比較例の紫外線硬化型粘着剤について、基材を用いずに剥離シートで露出面を保護した以外は上記と同様（段落［００３１］、［００３３］参照）に操作し、紫外線硬化型粘着剤層のみの構成の粘着シートを得た。紫外線硬化型粘着剤層を硬化させる前の粘弾性は、この紫外線硬化型粘着剤層のみの構成の粘着シートを紫外線硬化型粘着剤が厚み約４ｍｍとなるまで積層し、直径８ｍｍの円柱型に型抜きして粘弾性測定用の試料を作成した。この試料の２５℃における貯蔵弾性率（Ｇ’）およびｔａｎδを、粘弾性測定装置（ＲＥＯＭＥＴＲＩＣ社製、ＤＹＮＡＭＩＣ ＡＮＡＬＹＺＥＲ ＲＤＡII）を用いて測定した。   The UV curable adhesives of Examples and Comparative Examples were operated in the same manner as described above (see paragraphs [0031] and [0033]) except that the exposed surface was protected with a release sheet without using a substrate, and UV curable adhesives were used. A pressure-sensitive adhesive sheet having only a pressure-sensitive adhesive layer was obtained. The viscoelasticity before curing the ultraviolet curable pressure-sensitive adhesive layer is obtained by laminating a pressure-sensitive adhesive sheet having only the ultraviolet curable pressure-sensitive adhesive layer until the ultraviolet curable pressure-sensitive adhesive has a thickness of about 4 mm and forming a cylindrical shape having a diameter of 8 mm. A sample for viscoelasticity measurement was prepared by punching. The storage elastic modulus (G ′) and tan δ of this sample at 25 ° C. were measured using a viscoelasticity measuring apparatus (DYNAMIC ANALYZER RDAII, manufactured by REOMETRIC).

また、紫外線硬化型粘着剤層を硬化させた後の粘弾性を測定するため、上記紫外線硬化型粘着剤層のみの構成の粘着シートを紫外線硬化型粘着剤が厚み約０．５ｍｍとなるまで積層し、窒素雰囲気下で紫外線を照射し（照射条件：照度１５０ｍＷ／ｃｍ２、光量３００ｍＪ／ｃｍ２）、その後５０ｍｍ×４ｍｍの大きさに切り抜き、粘弾性測定用の試料を作成した。この試料の２５℃における貯蔵弾性率（Ｅ’）およびｔａｎδを、粘弾性測定装置（オリエンテック社製、ＲＥＯＶＩＢＲＯＮ ＤＤＶ−II−ＥＡ）を用いて測定した。 Also, in order to measure the viscoelasticity after curing the ultraviolet curable pressure-sensitive adhesive layer, the pressure-sensitive adhesive sheet having only the ultraviolet curable pressure-sensitive adhesive layer is laminated until the ultraviolet curable pressure-sensitive adhesive has a thickness of about 0.5 mm. Then, ultraviolet rays were irradiated in a nitrogen atmosphere (irradiation conditions: illuminance 150 mW / cm 2 , light amount 300 mJ / cm 2 ), and then cut out to a size of 50 mm × 4 mm to prepare a sample for measuring viscoelasticity. The storage elastic modulus (E ′) and tan δ of this sample at 25 ° C. were measured using a viscoelasticity measuring apparatus (Orientec, REOVIBRON DDV-II-EA).

表２より明らからかであるように、ＤＢＧ工程に用いられる紫外線硬化型ウエハ保護テープの紫外線硬化型粘着剤層を、酸素濃度が１０％以下の状態で硬化させることにより、ウエハ上における残渣物の発生（糊残り）を抑制できる。特に、ＤＢＧプロセスに適合させるべく、ダイシング工程を研削工程の後に行う通常プロセスに用いられるテープよりも優れた回路追従性等を実現するために、硬化前の貯蔵弾性率が２５℃において０．２０ＭＰａ以下であり、ｔａｎδの値が２５℃において０．２０以上であるといった粘弾性の低い紫外線硬化型粘着剤層を用いた場合であっても、研削水の浸入を防ぐとともに、さらにウエハ上の粘着剤残渣物の発生が防止できる。   As is apparent from Table 2, the UV curable pressure-sensitive adhesive layer of the UV curable wafer protective tape used in the DBG process is cured in a state where the oxygen concentration is 10% or less, thereby producing residues on the wafer. Generation (adhesive residue) can be suppressed. In particular, the storage elastic modulus before curing is 0.20 MPa at 25 ° C. in order to realize circuit followability superior to that of a tape used in a normal process in which the dicing process is performed after the grinding process in order to adapt to the DBG process. Even when using a UV curable pressure-sensitive adhesive layer having a low viscoelasticity such that the value of tan δ is 0.20 or more at 25 ° C. Generation of agent residue can be prevented.

さらに、窒素雰囲気下で紫外線硬化型粘着剤層を硬化させる際に、紫外線硬化型粘着剤層の周囲の酸素濃度を５％以下にすることにより、優れた残渣物防止効果が発揮されることが確認された。   Furthermore, when the ultraviolet curable pressure-sensitive adhesive layer is cured in a nitrogen atmosphere, an excellent residue prevention effect can be exhibited by setting the oxygen concentration around the ultraviolet curable pressure-sensitive adhesive layer to 5% or less. confirmed.

以上のように本実施形態によれば、紫外線硬化型粘着剤層を充分に硬化させ、粘着剤残渣物の発生を抑制する半導体チップの製造方法が実現できる。特に、ＤＢＧ工程のために粘弾性の低い紫外線硬化型粘着剤を用いた場合であっても、紫外線硬化型粘着剤層を確実に硬化させ、残渣物の発生を防止できる。   As described above, according to the present embodiment, it is possible to realize a method for manufacturing a semiconductor chip that sufficiently cures an ultraviolet curable pressure-sensitive adhesive layer and suppresses generation of a pressure-sensitive adhesive residue. In particular, even when an ultraviolet curable pressure-sensitive adhesive having low viscoelasticity is used for the DBG process, the ultraviolet curable pressure-sensitive adhesive layer can be reliably cured and the generation of a residue can be prevented.

紫外線硬化型ウエハ保護テープ等を構成する各部材の材質は、本実施形態において例示されたものに限定されない。   The material of each member constituting the ultraviolet curable wafer protection tape or the like is not limited to those exemplified in this embodiment.

半導体回路面に溝が設けられた状態のウエハを示す図である。It is a figure which shows the wafer of the state in which the groove | channel was provided in the semiconductor circuit surface. ウエハの回路面に紫外線硬化型ウエハ保護テープが貼着された状態で実施される研削工程を示す図である。It is a figure which shows the grinding process implemented in the state in which the ultraviolet curable wafer protection tape was stuck on the circuit surface of the wafer. 紫外線硬化型ウエハ保護テープを硬化させる硬化工程を示す図である。It is a figure which shows the hardening process which hardens an ultraviolet curable type wafer protective tape. 紫外線硬化型ウエハ保護テープを回路面から剥離する剥離工程を示す図である。It is a figure which shows the peeling process which peels an ultraviolet curing wafer protection tape from a circuit surface. 半導体チップのピックアップ工程を示す図である。It is a figure which shows the pick-up process of a semiconductor chip.

符号の説明Explanation of symbols

１０ ウエハ
１０Ｄ 切り込み深さ
１０Ｋ 溝
１０Ｒ 裏面
１０Ｓ 回路面
１０Ｔ 厚さ
１２ 紫外線硬化型ウエハ保護テープ（表面保護シート）
１４ 基材
１６ 紫外線硬化型粘着剤層
１８ グラインダ
２０ チップ（半導体チップ）
２０Ｇ 研削面
２０Ｋ 隙間
２４ ピックアップ用粘着シート
２６ ピン 10 Wafer 10D Depth of cut 10K Groove 10R Back surface 10S Circuit surface 10T Thickness 12 UV curable wafer protection tape (surface protection sheet)
14 Substrate 16 UV curable adhesive layer 18 Grinder 20 Chip (semiconductor chip)
20G Grinding surface 20K Clearance 24 Pickup adhesive sheet 26 Pin

Claims (6)

半導体回路が形成された回路面に溝を有するウエハに、表面保護シートの紫外線硬化型粘着剤層が前記回路面を覆うように貼着された状態で、前記ウエハの裏面が研削されて前記溝により分割されたチップが形成される半導体チップの製造方法において、
酸素濃度が１０％以下の環境において前記表面保護シートに紫外線を照射して前記紫外線硬化型粘着剤層を硬化させる硬化工程を備えることを特徴とする半導体チップの製造方法。 With the wafer having a groove on the circuit surface on which the semiconductor circuit is formed, the back surface of the wafer is ground and the groove is ground with the UV curable adhesive layer of the surface protection sheet adhered to the circuit surface. In the manufacturing method of the semiconductor chip in which the chip divided by is formed,
A method of manufacturing a semiconductor chip, comprising a curing step of curing the ultraviolet curable pressure-sensitive adhesive layer by irradiating the surface protective sheet with ultraviolet rays in an environment having an oxygen concentration of 10% or less. 硬化した前記表面保護シートを前記回路面から剥離する剥離工程をさらに有することを特徴とする請求項１に記載の半導体チップの製造方法。   The method for manufacturing a semiconductor chip according to claim 1, further comprising a peeling step of peeling the cured surface protective sheet from the circuit surface. 前記硬化工程において、不活性ガス雰囲気下で前記表面保護シートに紫外線を照射して前記紫外線硬化型粘着剤層を硬化させることを特徴とする請求項１または請求項２に記載の半導体チップの製造方法。   3. The manufacturing of a semiconductor chip according to claim 1, wherein, in the curing step, the ultraviolet ray is applied to the surface protective sheet in an inert gas atmosphere to cure the ultraviolet curable pressure-sensitive adhesive layer. Method. 前記硬化工程における紫外線硬化前の状態で、前記紫外線硬化型粘着剤層の貯蔵弾性率が２５℃において０．２０ＭＰａ以下であり、ｔａｎδの値が２５℃において０．２０以上であることを特徴とする請求項１〜３のいずれかに記載の半導体チップの製造方法。   The storage elastic modulus of the UV curable pressure-sensitive adhesive layer is 0.20 MPa or less at 25 ° C. and the value of tan δ is 0.20 or more at 25 ° C. before UV curing in the curing step. The manufacturing method of the semiconductor chip in any one of Claims 1-3 to do. 前記硬化工程における紫外線硬化後の状態で、前記紫外線硬化型粘着剤層の貯蔵弾性率が２５℃において３０ＭＰａ以上であり、ｔａｎδの値が２５℃において０．６０以下であることを特徴とする請求項１〜４のいずれかに記載の半導体チップの製造方法。   The storage elastic modulus of the ultraviolet curable pressure-sensitive adhesive layer is 30 MPa or more at 25 ° C. and the value of tan δ is 0.60 or less at 25 ° C. in a state after ultraviolet curing in the curing step. Item 5. A method for manufacturing a semiconductor chip according to any one of Items 1 to 4. 前記硬化工程と前記剥離工程との間で、前記チップをピックアップするためのピックアップ用粘着シートを前記チップの研削面に貼着するピックアップシート貼着工程をさらに有することを特徴とする請求項２に記載の半導体チップの製造方法。   The pick-up sheet sticking process of sticking the adhesive sheet for pick-up for picking up the chip on the grinding surface of the chip between the hardening process and the peeling process is characterized by the above-mentioned. The manufacturing method of the semiconductor chip of description.
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