JP2008223067A - Mask member for film deposition, manufacturing method of mask member for film deposition, mask film deposition method, and film deposition apparatus - Google Patents

Mask member for film deposition, manufacturing method of mask member for film deposition, mask film deposition method, and film deposition apparatus Download PDF

Info

Publication number
JP2008223067A
JP2008223067A JP2007061349A JP2007061349A JP2008223067A JP 2008223067 A JP2008223067 A JP 2008223067A JP 2007061349 A JP2007061349 A JP 2007061349A JP 2007061349 A JP2007061349 A JP 2007061349A JP 2008223067 A JP2008223067 A JP 2008223067A
Authority
JP
Japan
Prior art keywords
substrate
film
mask member
film forming
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2007061349A
Other languages
Japanese (ja)
Inventor
Takayuki Kuwabara
貴之 桑原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP2007061349A priority Critical patent/JP2008223067A/en
Publication of JP2008223067A publication Critical patent/JP2008223067A/en
Withdrawn legal-status Critical Current

Links

Images

Abstract

<P>PROBLEM TO BE SOLVED: To provide a mask member for film deposition, a manufacturing method of a mask member for film deposition, a mask film deposition method, and a film deposition apparatus capable of preventing any inconvenience attributable to damages or peel-off of a previously deposited thin film even when film deposition is performed with the mask member for film deposition superposed on a substrate for treatment in a contact manner after depositing the thin film on the substrate. <P>SOLUTION: When manufacturing a mask member 10 for film deposition for the mask vapor deposition, plasma is applied to a substrate contact surface 20a of a chip 20 joined with a supporting substrate 30. In this case, by using a fluorine gas as an introducing gas, a fluorine-based polymer film having high water repellency is deposited on the substrate contact surface 20a of the chip 20, and the contact angle of the substrate contact surface 20a to water becomes ≥100°. Therefore, even when the substrate contact surface 20a of the mask member 10 for film deposition is superposed on the substrate, and is detached from the substrate after the vapor deposition in this state, any peel-off is not caused in the previously deposited thin film. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

本発明は、成膜パターンに対応するマスク開口部を備えた成膜用マスク部材、成膜用マスク部材の製造方法、マスク成膜方法、および成膜装置に関するものである。   The present invention relates to a film forming mask member having a mask opening corresponding to a film forming pattern, a method for manufacturing a film forming mask member, a mask film forming method, and a film forming apparatus.

各種半導体装置や電気光学装置の製造工程では、成膜パターンに対応するマスク開口部が形成された成膜用マスク部材を被処理基板に重ね、この状態で真空蒸着法、スパッタ成膜、イオンプレーティング、ＣＶＤ法などの成膜を行うことがある。例えば、電気光学装置としての有機エレクトロルミネッセンス（以下、ＥＬという）装置の製造工程において、発光素子用の有機ＥＬ材料（有機機能層）を所定形状に形成する際にフォトリソグラフィ技術を利用すると、パターニング用のレジストマスクをエッチング液や酸素プラズマなどで除去する際に有機機能材料が水分や酸素に触れて劣化するおそれがあるため、被処理基板に成膜用マスク部材を重ねた状態で真空蒸着を行うマスク蒸着法によって有機機能層を形成する（例えば、特許文献１参照）。
特開２００４−２１４０１５号公報 In the manufacturing process of various semiconductor devices and electro-optical devices, a deposition mask member having a mask opening corresponding to a deposition pattern is overlaid on a substrate to be processed, and in this state, vacuum deposition, sputtering deposition, ion plating are performed. In some cases, film formation such as coating or CVD is performed. For example, in the manufacturing process of an organic electroluminescence (hereinafter referred to as EL) device as an electro-optical device, patterning is performed by using a photolithography technique when forming an organic EL material (organic functional layer) for a light emitting element into a predetermined shape. When removing the resist mask for etching with an etching solution or oxygen plasma, the organic functional material may deteriorate due to contact with moisture or oxygen. Therefore, vacuum deposition is performed with the film forming mask member overlaid on the substrate to be processed. An organic functional layer is formed by the mask vapor deposition method to perform (for example, refer patent document 1).
JP 2004-2104015 A

しかしながら、被処理基板に薄膜を形成した後、マスク蒸着を行うと、被処理基板に先に形成されている薄膜と成膜用マスク部材とが接触することになるので、蒸着後、被処理基板から成膜用マスク部材を外す際、先に形成されていた薄膜が剥がれ、不具合品が発生するという問題点がある。また、被処理基板に先に形成されている薄膜と成膜用マスク部材とが全面接触した際、先に形成されている薄膜が損傷することもある。   However, if mask deposition is performed after a thin film is formed on the substrate to be processed, the thin film previously formed on the substrate to be processed and the film forming mask member come into contact with each other. When the film-forming mask member is removed from the film, there is a problem that the previously formed thin film is peeled off and a defective product is generated. Further, when the thin film previously formed on the substrate to be processed and the film formation mask member come into full contact with each other, the previously formed thin film may be damaged.

例えば、図１０（ａ）に示す成膜用マスク部材１０は、複数の開口領域３２が形成された支持基板３０と、開口領域３２を覆うように支持基板３０に接合された複数のチップ２０とを備えており、チップ２０には、被処理基板２００に対する成膜パターンに対応するマスク開口部２２が形成されている。かかる成膜用マスク部材１０を用いて、被処理基板２００に先に形成されている薄膜２１０の上層にさらに新たな薄膜２２０を形成する際には、被処理基板２００に先に形成されている薄膜と成膜用マスク部材１０とが接触することになる。このため、蒸着後、被処理基板２００から成膜用マスク部材１０を外す際、図１０（ｂ）に示すように、先に形成されていた薄膜２１０の一部２１０ａが剥がれ、不具合品が発生してしまう。   For example, the film forming mask member 10 shown in FIG. 10A includes a support substrate 30 in which a plurality of opening regions 32 are formed, and a plurality of chips 20 bonded to the support substrate 30 so as to cover the opening regions 32. In the chip 20, a mask opening 22 corresponding to a film forming pattern for the substrate to be processed 200 is formed. When a new thin film 220 is formed on the upper layer of the thin film 210 previously formed on the target substrate 200 using the film forming mask member 10, the new thin film 220 is first formed on the target substrate 200. The thin film and the film forming mask member 10 come into contact with each other. For this reason, when the film-forming mask member 10 is removed from the substrate to be processed 200 after vapor deposition, as shown in FIG. 10B, a part 210a of the thin film 210 previously formed is peeled off, resulting in a defective product. Resulting in.

また、図１１（ａ）〜（ｅ）に示すように、成膜用マスク部材１０を用いて、複数のパターン２４０、２５０を交互に形成する際は、図１１（ａ）、（ｂ）に示すように、成膜用マスク部材１０を用いて一回目のマスク蒸着でパターン２４０を一定間隔ごとに形成した後、図１１（ｃ）、（ｄ）に示すように、成膜用マスク部材１０の位置をずらして、先に形成したパターン２４０の間に、一定間隔をおいて新たにパターン２５０を形成する。しかしながら、図１１（ｃ）に示すように、成膜用マスク部材１０の位置をずらすと、被処理基板２００に先に形成されているパターン２４０と成膜用マスク部材１０が接触することになるので、蒸着後、被処理基板２００から成膜用マスク部材１０を外す際、図１１（ｅ）に示すように、先に形成されていたパターン２４０の一部２４０ａが剥がれ、不具合品が発生してしまう。   Further, as shown in FIGS. 11A to 11E, when the plurality of patterns 240 and 250 are alternately formed using the film forming mask member 10, the patterns shown in FIGS. As shown in FIG. 11, after the pattern 240 is formed at regular intervals by the first mask vapor deposition using the film formation mask member 10, the film formation mask member 10 is formed as shown in FIGS. The pattern 250 is newly formed at a predetermined interval between the previously formed patterns 240. However, as shown in FIG. 11C, if the position of the film forming mask member 10 is shifted, the pattern 240 previously formed on the substrate to be processed 200 and the film forming mask member 10 come into contact with each other. Therefore, when the film forming mask member 10 is removed from the substrate to be processed 200 after vapor deposition, as shown in FIG. 11E, a part 240a of the pattern 240 previously formed is peeled off, resulting in a defective product. End up.

このような薄膜の膜剥がれを防ぐため、特許文献１に記載の構成においては、成膜用マスク部材に被処理基板に向けて延びる突起を形成し、突起を被処理基板と当接させることにより、成膜用マスク部材が被処理基板に形成される薄膜と接触することを防いでいる。しかしながら、このような構成においては、被処理基板と成膜用マスク部材とが密接していない状態で蒸着を行うので、被処理基板に形成される成膜パターンの精度が低下してしまい、好ましくない。   In order to prevent such peeling of the thin film, in the configuration described in Patent Document 1, a protrusion extending toward the substrate to be processed is formed on the film forming mask member, and the protrusion is brought into contact with the substrate to be processed. The film formation mask member is prevented from coming into contact with the thin film formed on the substrate to be processed. However, in such a configuration, since the deposition is performed in a state where the substrate to be processed and the film formation mask member are not in close contact with each other, the accuracy of the film formation pattern formed on the substrate to be processed is lowered. Absent.

以上の問題に鑑みて、本発明の課題は、被処理基板に薄膜を形成した後、被処理基板に成膜用マスク部材を接触する状態で重ねて成膜した場合でも、先に形成した薄膜の損傷や剥離に起因する不具合が発生することのない成膜用マスク部材、成膜用マスク部材の製造方法、マスク成膜方法、および成膜装置を提供することにある。   In view of the above problems, an object of the present invention is to form a thin film previously formed even when a thin film is formed on a substrate to be processed and then a film forming mask member is stacked on the substrate to be processed. It is an object of the present invention to provide a film forming mask member, a film forming mask member manufacturing method, a mask film forming method, and a film forming apparatus that do not cause defects due to damage or peeling.

上記課題を解決するために、本発明では、被処理基板に対する成膜パターンに対応するマスク開口部が形成された成膜用マスク部材において、前記被処理基板に重ねられる基板接触面の水に対する接触角が１００°以上であることを特徴とする。   In order to solve the above-described problems, in the present invention, in a film formation mask member in which a mask opening corresponding to a film formation pattern on a substrate to be processed is formed, contact of the substrate contact surface overlaid on the substrate to be processed with respect to water The angle is 100 ° or more.

本発明に係る成膜用マスク部材において、前記被処理基板に重ねられる基板接触面の水に対する接触角が１００°以上であり、撥水性が高いため、先に薄膜が形成されている被処理基板に成膜用マスク部材を重ねた場合でも、被処理基板上に形成された薄膜に対する離型性が高い。それ故、先に薄膜が形成されている被処理基板に成膜用マスク部材を重ねた状態で成膜した後、被処理基板から成膜用マスク部材を外した際、先に形成されている薄膜が成膜用マスク部材に付着して剥がれるということが発生しない。それ故、被処理基板に薄膜を形成した後、被処理基板に成膜用マスク部材を接触する状態で重ねて成膜した場合でも、先に形成した薄膜の損傷や剥離に起因する不具合が発生しない。   In the mask member for film formation according to the present invention, the substrate contact surface superimposed on the substrate to be processed has a contact angle with respect to water of 100 ° or more, and has high water repellency. Even when the film forming mask member is overlaid, the releasability of the thin film formed on the substrate to be processed is high. Therefore, after the film formation mask member is overlaid on the substrate to be processed on which the thin film has been previously formed, the film formation mask member is removed when the film formation mask member is removed from the substrate to be processed. It does not occur that the thin film adheres to and peels off from the film forming mask member. Therefore, even if a thin film is formed on the substrate to be processed and then the film forming mask member is in contact with the substrate to be processed, a defect due to damage or peeling of the previously formed thin film occurs. do not do.

このような成膜用マスク部材は、例えば、以下の方法で製造することができる。すなわち、被処理基板に対する成膜パターンに対応するマスク開口部が形成された成膜用マスク部材の製造方法において、前記被処理基板に重ねられる基板接触面に対して撥水処理を行なうことを特徴とする。   Such a film-forming mask member can be manufactured, for example, by the following method. That is, in the method of manufacturing a film formation mask member in which a mask opening corresponding to a film formation pattern for a substrate to be processed is formed, a water repellent treatment is performed on a substrate contact surface that is superimposed on the substrate to be processed. And

本発明では、マスク成膜を行なう際に撥水処理を行なってよい。すなわち、本発明では、被処理基板に対する成膜パターンに対応するマスク開口部が形成された成膜用マスク部材を前記被処理基板に重ねた状態で成膜を行なうマスク成膜方法において、成膜を行なう前に、前記成膜用マスク部材において前記被処理基板に重ねられる基板接触面に対して撥水処理を行なうことを特徴とする。   In the present invention, water repellent treatment may be performed when the mask film is formed. That is, according to the present invention, in a mask film forming method for forming a film in a state in which a film forming mask member having a mask opening corresponding to a film forming pattern on the substrate to be processed is overlaid on the substrate to be processed. Before performing the above process, the film forming mask member performs a water repellent process on the substrate contact surface that is to be superimposed on the substrate to be processed.

このようなマスク成膜方法を実施する場合、成膜装置を以下のように構成することが好ましい。すなわち、本発明では、被処理基板に対する成膜パターンに対応するマスク開口部が形成された成膜用マスク部材を前記被処理基板に重ねた状態で成膜を行なう成膜装置において、複数の成膜エリアと、前記成膜用マスク部材において前記被処理基板に重ねられる基板接触面に対して撥水処理を行なう撥水処理エリアとを備えていることを特徴とする。   When performing such a mask film forming method, it is preferable to configure the film forming apparatus as follows. That is, according to the present invention, in a film forming apparatus that forms a film in a state where a film forming mask member in which a mask opening corresponding to a film forming pattern on the substrate to be processed is formed is superimposed on the substrate to be processed, a plurality of components are formed. A film area and a water-repellent treatment area for performing a water-repellent treatment on a substrate contact surface overlaid on the substrate to be processed in the film-forming mask member are provided.

本発明において、前記撥水処理では、前記基板接触面にフッ素系ガスを用いたプラズマ処理を行なう構成を採用することができる。このように構成すると、成膜用マスク部材の基板接触面には、撥水性の高いフッ素系重合膜が形成されるため、これにより、成膜用マスク部材の一方面における、薄膜に対する離型性を高めることができる。   In the present invention, the water repellent treatment may employ a configuration in which a plasma treatment using a fluorine-based gas is performed on the substrate contact surface. With this configuration, a fluorine-based polymer film having high water repellency is formed on the substrate contact surface of the film formation mask member. Accordingly, the release property of the film formation mask member on the one surface with respect to the thin film is improved. Can be increased.

本発明において、前記撥水処理では、撥水処理液を前記基板接触面に接触させる構成を採用してもよい。   In the present invention, the water repellent treatment may employ a configuration in which a water repellent treatment liquid is brought into contact with the substrate contact surface.

以下に、図面を参照して、本発明を適用した成膜用マスク部材、この成膜用マスク部材の製造方法、この成膜用マスク部材を用いたマスク成膜方法、およびかかるマスク成膜方法の実施に適した成膜装置について説明する。なお、以下の実施の形態では、本発明の成膜用マスク部材が使用される対象として有機ＥＬ（エレクトロルミネッセンス）装置を例示する。   DESCRIPTION OF EMBODIMENTS Hereinafter, a film forming mask member to which the present invention is applied, a method for manufacturing the film forming mask member, a mask film forming method using the film forming mask member, and such a mask film forming method will be described with reference to the drawings. A film forming apparatus suitable for the implementation will be described. In the following embodiments, an organic EL (electroluminescence) device is exemplified as an object to which the film forming mask member of the present invention is used.

（有機ＥＬ装置の構成例）
図１は、本発明が適用される有機ＥＬ装置の要部断面図である。図１に示す有機ＥＬ装置１は、表示装置やプリンタの光学ヘッドなどとして用いられるものであり、素子基板２上では、感光性樹脂からなる隔壁９で囲まれた複数の領域に画素３が構成されている。複数の画素３は各々、有機ＥＬ素子３ａを備えており、有機ＥＬ素子３ａは、陽極として機能するＩＴＯ（Indium Tin Oxide）膜からなる画素電極４と、この画素電極４からの正孔を注入／輸送する正孔注入輸送層５と、有機ＥＬ材料からなる発光層６と、電子を注入／輸送する電子注入輸送層７と、アルミニウムやアルミニウム合金からなる陰極８とを備えている。陰極８の側には、有機ＥＬ素子３ａが水分や酸素により劣化するのを防止するための封止層や封止部材（図示せず）が配置されている。素子基板２上には、画素電極４に電気的に接続された駆動用トランジスタ２ａなどを含む回路部２ｂが有機ＥＬ素子３ａの下層側に形成されている。ここで、有機ＥＬ装置１が表示装置として用いられる場合、各画素３はマトリクス状に形成される。 (Configuration example of organic EL device)
FIG. 1 is a cross-sectional view of an essential part of an organic EL device to which the present invention is applied. An organic EL device 1 shown in FIG. 1 is used as an optical head of a display device or a printer. On the element substrate 2, pixels 3 are configured in a plurality of regions surrounded by a partition wall 9 made of a photosensitive resin. Has been. Each of the plurality of pixels 3 includes an organic EL element 3a. The organic EL element 3a injects a pixel electrode 4 made of an ITO (Indium Tin Oxide) film functioning as an anode and holes from the pixel electrode 4 A hole injecting and transporting layer 5 for transporting / transporting, a light emitting layer 6 made of an organic EL material, an electron injecting and transporting layer 7 for injecting / transporting electrons, and a cathode 8 made of aluminum or an aluminum alloy. On the cathode 8 side, a sealing layer and a sealing member (not shown) for preventing the organic EL element 3a from being deteriorated by moisture or oxygen are disposed. On the element substrate 2, a circuit portion 2b including a driving transistor 2a electrically connected to the pixel electrode 4 is formed on the lower layer side of the organic EL element 3a. Here, when the organic EL device 1 is used as a display device, each pixel 3 is formed in a matrix.

有機ＥＬ装置１がボトムエミッション方式である場合は、発光層６で発光した光を画素電極４の側から出射するため、素子基板２の基体としては、ガラス、石英、樹脂（プラスチック、プラスチックフィルム）などの透明基板が用いられる。その際、陰極８を光反射膜によって構成すれば、発光層６で発光した光を陰極８で反射して透明基板の側から出射することができる。   When the organic EL device 1 is a bottom emission method, light emitted from the light emitting layer 6 is emitted from the pixel electrode 4 side, so that the base of the element substrate 2 is glass, quartz, resin (plastic, plastic film) A transparent substrate such as is used. At this time, if the cathode 8 is formed of a light reflecting film, the light emitted from the light emitting layer 6 can be reflected by the cathode 8 and emitted from the transparent substrate side.

これに対して、有機ＥＬ装置１がトップエミッション方式である場合は、発光層６で発光した光を陰極８の側から出射するため、素子基板２の基体は透明である必要はない。但し、有機ＥＬ装置１がトップエミッション方式である場合でも、素子基板２に対して光出射側とは反対側の面に反射層（図示せず）を配置して、発光層６で発光した光を陰極８の側から出射する場合には、素子基板２の基体として透明基板を用いること必要がある。なお、有機ＥＬ装置１がトップエミッション方式である場合において、素子基板２の基体と発光層６との間、例えば、画素電極４の下層側などに反射層を形成して、発光層６で発光した光を陰極８の側から出射する場合には、素子基板２の基体は透明である必要はない。   On the other hand, when the organic EL device 1 is a top emission method, the light emitted from the light emitting layer 6 is emitted from the cathode 8 side, and therefore the base of the element substrate 2 does not need to be transparent. However, even when the organic EL device 1 is a top emission type, a light is emitted from the light emitting layer 6 by disposing a reflective layer (not shown) on the surface opposite to the light emitting side with respect to the element substrate 2. Is emitted from the cathode 8 side, it is necessary to use a transparent substrate as the base of the element substrate 2. When the organic EL device 1 is a top emission method, a light emitting layer 6 emits light by forming a reflective layer between the base of the element substrate 2 and the light emitting layer 6, for example, on the lower layer side of the pixel electrode 4. When the emitted light is emitted from the cathode 8 side, the base of the element substrate 2 does not have to be transparent.

ここで、有機ＥＬ装置１がトップエミッション方式である場合、陰極８が薄く形成される。このため、陰極８の電気抵抗の増大を補うことを目的に、隔壁９の上面にアルミニウムやアルミニウム合金からなる補助配線８ａが形成されることもある。   Here, when the organic EL device 1 is a top emission system, the cathode 8 is formed thin. For this reason, an auxiliary wiring 8 a made of aluminum or an aluminum alloy may be formed on the upper surface of the partition wall 9 in order to compensate for an increase in electric resistance of the cathode 8.

有機ＥＬ装置１がカラー表示装置として用いられる場合、複数の画素３および有機ＥＬ素子３ａは各々、赤（Ｒ）、緑（Ｇ）、青（Ｂ）に対応するサブ画素として構成される。その場合、有機ＥＬ素子３ａにおいて、発光層６は、各色に対応する光を出射可能な発光材料により形成された発光層６（Ｒ）、（Ｇ）、（Ｂ）として形成される。また、単独の発光材料からなる発光層６によって、ＲＧＢ各色の特性を得るのは難しいことが多いので、ホスト材料に蛍光色素をドーピングした発光層６を形成し、蛍光色素からのルミネッセンスを発光色として取り出すこともある。このようなホスト材料とドーパント材料の組み合わせとしては、例えば、トリス（８−キノリラート）アルミニウムとクマリン誘導体との組み合わせ、アントラセン誘導体とスチリルアミン誘導体との組み合わせ、アントラセン誘導体とナフタセン誘導体との組み合わせ、トリス（８−キノリラート）アルミニウムとジシアノピラン誘導体との組み合わせ、ナフタセン誘導体とジインデノペリレンとの組み合わせなどがある。また、電子注入輸送層７は、トリス（８−キノリラート）アルミニウムを含む有機アルミニウム錯体などが用いられる。   When the organic EL device 1 is used as a color display device, the plurality of pixels 3 and the organic EL element 3a are each configured as a sub pixel corresponding to red (R), green (G), and blue (B). In that case, in the organic EL element 3a, the light emitting layer 6 is formed as the light emitting layers 6 (R), (G), and (B) made of a light emitting material capable of emitting light corresponding to each color. In addition, since it is often difficult to obtain the characteristics of each RGB color by the light emitting layer 6 made of a single light emitting material, the light emitting layer 6 in which the host material is doped with a fluorescent dye is formed, and the luminescence from the fluorescent dye is emitted. It may be taken out as Examples of such a combination of the host material and the dopant material include a combination of tris (8-quinolylato) aluminum and a coumarin derivative, a combination of an anthracene derivative and a styrylamine derivative, a combination of an anthracene derivative and a naphthacene derivative, and tris ( 8-quinolylate) A combination of aluminum and a dicyanopyran derivative, a combination of a naphthacene derivative and diindenoperylene, and the like. For the electron injecting and transporting layer 7, an organoaluminum complex containing tris (8-quinolylato) aluminum is used.

なお、図１に示す有機ＥＬ装置１において、各画素３は隔壁９により分離されているが、隣接する画素３間で画素電極４、正孔注入輸送層５、発光層６、電子注入輸送層７、および陰極８が隔壁９を介さず、所定の間隔で形成されることもある。   In the organic EL device 1 shown in FIG. 1, each pixel 3 is separated by a partition wall 9, but a pixel electrode 4, a hole injection / transport layer 5, a light emitting layer 6, and an electron injection / transport layer between adjacent pixels 3. 7 and the cathode 8 may be formed at a predetermined interval without using the partition wall 9.

（有機ＥＬ装置１の製造方法）
素子基板２を形成するにあたっては、単品サイズの基板に以下の工程を施す方法の他、素子基板２を多数取りできる大型基板に以下の工程を施した後、単品サイズの素子基板２に切断する方法が採用されるが、以下の説明ではサイズを問わず、被処理基板２００と称する。 (Manufacturing method of the organic EL device 1)
In forming the element substrate 2, in addition to a method of performing the following steps on a single-size substrate, the following steps are performed on a large substrate on which a large number of element substrates 2 can be obtained, and then the element substrate 2 is cut into single-size element substrates 2. Although the method is employed, in the following description, the substrate 200 is referred to regardless of size.

有機ＥＬ装置１を製造するには、被処理基板２００に対して成膜工程、レジストマスクを用いてのパターニング工程などといった半導体プロセスを利用して各層が形成される。但し、正孔注入輸送層５、発光層６、電子注入輸送層７などは、水分や酸素により劣化しやすい有機低分子材料で形成されるため、正孔注入輸送層５、発光層６、電子注入輸送層７を形成する際、さらには、電子注入輸送層７の上層に補助配線８ａや陰極８を形成する際、レジストマスクを用いてのパターニング工程を行うと、レジストマスクをエッチング液や酸素プラズマなどで除去する際に正孔注入輸送層５、発光層６、電子注入輸送層７が水分や酸素により劣化してしまう。そこで、本形態では、正孔注入輸送層５、発光層６、電子注入輸送層７を形成する際、さらには陰極８や補助配線８ａを形成する際には、以下に詳述する蒸着装置を用いてマスク蒸着を行い、レジストマスクを用いてのパターニング工程を行わない。   In order to manufacture the organic EL device 1, each layer is formed on the substrate to be processed 200 by using a semiconductor process such as a film forming process or a patterning process using a resist mask. However, since the hole injecting and transporting layer 5, the light emitting layer 6, the electron injecting and transporting layer 7 and the like are formed of an organic low-molecular material that easily deteriorates due to moisture or oxygen, the hole injecting and transporting layer 5, the light emitting layer 6, and the electrons are formed. When the injection transport layer 7 is formed, and further, when the auxiliary wiring 8a and the cathode 8 are formed above the electron injection transport layer 7, a patterning process using a resist mask is performed. When removed by plasma or the like, the hole injecting and transporting layer 5, the light emitting layer 6, and the electron injecting and transporting layer 7 are deteriorated by moisture and oxygen. Therefore, in this embodiment, when forming the hole injecting and transporting layer 5, the light emitting layer 6, and the electron injecting and transporting layer 7, and further when forming the cathode 8 and the auxiliary wiring 8a, a vapor deposition apparatus described in detail below is used. The mask deposition is performed using the resist mask, and the patterning process using the resist mask is not performed.

（蒸着方法および蒸着装置の基本構成）
図２は、本発明を適用した成膜用マスク部材を用いて成膜を行う成膜装置の構成を示す概略構成図である。図２に示すように、蒸着室４１内の上方位置には、被処理基板２００および成膜用マスク部材１０を保持する基板ホルダ４９が配置されており、成膜用マスク部材１０は、被処理基板２００の下面側（被成膜面側）の所定位置に重ねられた状態にある。成膜用マスク部材１０の構成については、図３（ａ）、（ｂ）などを参照して後述するが、被処理基板２００に形成する蒸着パターンに対応する複数のマスク開口部２２が構成されている。 (Basic configuration of vapor deposition method and vapor deposition apparatus)
FIG. 2 is a schematic configuration diagram showing a configuration of a film forming apparatus for forming a film using a film forming mask member to which the present invention is applied. As shown in FIG. 2, a substrate holder 49 that holds the substrate to be processed 200 and the film formation mask member 10 is disposed at an upper position in the vapor deposition chamber 41, and the film formation mask member 10 is to be processed. The substrate 200 is overlaid at a predetermined position on the lower surface side (film formation surface side) of the substrate 200. The configuration of the film forming mask member 10 will be described later with reference to FIGS. 3A and 3B, but a plurality of mask openings 22 corresponding to the vapor deposition pattern formed on the substrate to be processed 200 are configured. ing.

蒸着室４１内の下方位置には、被処理基板２００に向けて蒸着分子や蒸着原子などの蒸着粒子からなる蒸気流を供給する蒸着源４２が配置されている。蒸着源４２は、蒸着材料が装填された坩堝４４と、坩堝４４内の蒸着材料を加熱するための加熱装置４３とを備えている。加熱装置４３は、内側に坩堝４４全体を装着可能な凹部４３５を備えた有底筒状のヒートブロック４３１と、このヒートブロック４３１内に配置された電熱線などの発熱体４３２とを備えており、ヒートブロック４３１あるいは坩堝４４の温度を熱電対などで監視しながら発熱体４３２への給電を制御する。また、蒸着源４２に対しては、その開口部を開閉するセルシャッタ４５が構成されている。なお、蒸着源４２は、例えば、基板ホルダ４９に保持された被処理基板２００の中心から外れた位置に配置されており、被処理基板２００を回転しながら蒸着を行うことにより、蒸着材料の使用効率を高めることができる。   A vapor deposition source 42 that supplies a vapor flow made of vapor deposition particles such as vapor deposition molecules and vapor deposition atoms toward the substrate 200 to be processed is disposed at a lower position in the vapor deposition chamber 41. The vapor deposition source 42 includes a crucible 44 loaded with a vapor deposition material, and a heating device 43 for heating the vapor deposition material in the crucible 44. The heating device 43 includes a bottomed cylindrical heat block 431 provided with a recess 435 in which the entire crucible 44 can be mounted, and a heating element 432 such as a heating wire disposed in the heat block 431. The power supply to the heating element 432 is controlled while monitoring the temperature of the heat block 431 or the crucible 44 with a thermocouple or the like. A cell shutter 45 that opens and closes the opening of the vapor deposition source 42 is configured. The vapor deposition source 42 is disposed, for example, at a position deviated from the center of the substrate to be processed 200 held by the substrate holder 49, and the vapor deposition material is used by performing vapor deposition while rotating the substrate 200 to be processed. Efficiency can be increased.

（成膜用マスク部材の構成）
図３は、本発明を適用した成膜用マスク部材全体の基本的構成を示す斜視図である。図４は、成膜用マスク部材の一部を拡大してチップの基本的構成を示す説明図である。図５は、本発明を適用した成膜用マスク部材を用いた成膜方法を示す工程図である。図６は、本発明を適用した成膜用マスク部材を用いた別の成膜方法を示す工程図である。 (Configuration of film-forming mask member)
FIG. 3 is a perspective view showing a basic configuration of the entire film forming mask member to which the present invention is applied. FIG. 4 is an explanatory view showing a basic configuration of the chip by enlarging a part of the film forming mask member. FIG. 5 is a process diagram showing a film forming method using a film forming mask member to which the present invention is applied. FIG. 6 is a process diagram showing another film forming method using the film forming mask member to which the present invention is applied.

図３および図４に示す成膜用マスク部材１０は、ベース基板をなす矩形の支持基板３０に、複数のチップ２０（マスク用基板）を複数、取り付けた構成を有している。本形態では、チップ２０はシリコン基板からなるものとする。各チップ２０は各々、アライメントされて支持基板３０に陽極接合や紫外線硬化型接着剤などにより接合されている。   The film formation mask member 10 shown in FIGS. 3 and 4 has a configuration in which a plurality of chips 20 (mask substrates) are attached to a rectangular support substrate 30 that forms a base substrate. In this embodiment, the chip 20 is made of a silicon substrate. Each chip 20 is aligned and bonded to the support substrate 30 by anodic bonding or ultraviolet curable adhesive.

チップ２０には、成膜パターンに対応する長孔形状のマスク開口部２２が複数一定間隔で平行に並列した状態で形成されており、マスク開口部２２の各間には梁部２７が形成されている。また、チップ２０において、マスク開口部２２の形成領域の周りには外枠部２５が形成されており、かかる外枠部２５が支持基板３０に接合されている。   The chip 20 is formed with a plurality of long-hole-shaped mask openings 22 corresponding to the film formation pattern in parallel with a predetermined interval, and a beam portion 27 is formed between the mask openings 22. ing. In the chip 20, an outer frame portion 25 is formed around a region where the mask opening 22 is formed, and the outer frame portion 25 is bonded to the support substrate 30.

支持基板３０には、長方形の貫通穴からなる複数の開口領域３２が平行、かつ一定間隔で設けられており、複数のチップ２０は、支持基板３０の開口領域３２を塞ぐように支持基板３０上に固定されている。支持基板３０には、アライメントマーク３９が形成されており、アライメントマーク３９は、成膜用マスク部材１０を使用して蒸着などを行うときに、成膜用マスク部材１０の位置合わせを行うためのものである。なお、チップ２０の外枠部２５にアライメントマーク３９を形成してもよい。支持基板３０の構成材料は、チップ２０の構成材料の熱膨張係数と同一又は近い熱膨張係数を有するものが好ましい。チップ２０はシリコンであるので、シリコンの熱膨張係数と同等の熱膨張係数をもつ材料で支持基板３０を構成する。このようにすることにより、支持基板３０とチップ２０との熱膨張量の違いによる「歪み」や「撓み」の発生を抑えることができる。本形態では、支持基板３０としては、無アルカリガラス、ホウケイ酸ガラス、ソーダガラス、石英ガラスなどからなる透明基板が用いられている。   The support substrate 30 is provided with a plurality of opening regions 32 made of rectangular through holes in parallel and at regular intervals, and the plurality of chips 20 are arranged on the support substrate 30 so as to close the opening regions 32 of the support substrate 30. It is fixed to. An alignment mark 39 is formed on the support substrate 30, and the alignment mark 39 is used to align the film forming mask member 10 when performing vapor deposition using the film forming mask member 10. Is. The alignment mark 39 may be formed on the outer frame portion 25 of the chip 20. The constituent material of the support substrate 30 preferably has the same or close thermal expansion coefficient as that of the constituent material of the chip 20. Since the chip 20 is made of silicon, the support substrate 30 is made of a material having a thermal expansion coefficient equivalent to that of silicon. By doing in this way, generation | occurrence | production of the "distortion" and "bending" by the difference in the thermal expansion amount of the support substrate 30 and the chip | tip 20 can be suppressed. In this embodiment, a transparent substrate made of alkali-free glass, borosilicate glass, soda glass, quartz glass, or the like is used as the support substrate 30.

複数のチップ２０の各々において、外枠部２５の下面にはアライメントマーク２４が少なくとも２ヶ所形成されている。これらのアライメントマーク２４と、複数の開口領域３２の外周に一定間隔に形成されたアライメントマーク３４とを重ね合わせることにより、支持基板３０に対するチップ２０の位置合わせを行うことができる。アライメントマーク２４および３４は、フォトリソグラフィ技術または結晶異方性エッチングなどにより形成される。   In each of the plurality of chips 20, at least two alignment marks 24 are formed on the lower surface of the outer frame portion 25. The alignment of the chip 20 with respect to the support substrate 30 can be performed by superimposing the alignment marks 24 and the alignment marks 34 formed at regular intervals on the outer periphery of the plurality of opening regions 32. The alignment marks 24 and 34 are formed by a photolithography technique or crystal anisotropic etching.

本形態において、チップ２０は、面方位（１１０）を有する単結晶シリコン基板からなり、この単結晶シリコン基板にフォトリソグラフィ技術やエッチング技術などを用いて、貫通溝からなるマスク開口部２２を形成することにより製造される。チップ２０の裏面には大きな凹部２９が形成されており、マスク開口部２２は、凹部２９の底部で開口している。このため、マスク開口部２２が形成された領域では基板厚が薄く、斜め方向に進行する蒸着粒子もマスク開口部２２を通過しやすくなっている。   In this embodiment, the chip 20 is formed of a single crystal silicon substrate having a plane orientation (110), and a mask opening 22 formed of a through groove is formed on the single crystal silicon substrate using a photolithography technique, an etching technique, or the like. It is manufactured by. A large recess 29 is formed on the back surface of the chip 20, and the mask opening 22 opens at the bottom of the recess 29. For this reason, in the region where the mask opening 22 is formed, the thickness of the substrate is thin, and vapor deposition particles traveling in an oblique direction also easily pass through the mask opening 22.

かかる成膜用マスク部材１０を用いて、被処理基板２００にマスク蒸着を行う場合には、まず、被処理基板２００の下面（被成膜面／素子基板２の両面のうち、有機ＥＬ素子３ａが形成される側の面）に成膜用マスク部材１０を重ねる。その結果、被処理基板２００の下面には成膜用マスク部材１０のチップ２０の上面（基板接触面２０ａ）が当接する。この状態で真空蒸着を行うと、坩堝から供給された蒸着分子や蒸着原子は、チップ２０のマスク開口部２２を介して被処理基板２００の下面に堆積する。   When performing mask vapor deposition on the substrate 200 to be processed using the film forming mask member 10, first, the organic EL element 3 a is selected from the lower surface of the substrate 200 to be processed (deposition surface / both surfaces of the element substrate 2. The film forming mask member 10 is overlaid on the surface on which the film is formed. As a result, the upper surface (substrate contact surface 20a) of the chip 20 of the film forming mask member 10 contacts the lower surface of the substrate 200 to be processed. When vacuum vapor deposition is performed in this state, vapor deposition molecules and vapor atoms supplied from the crucible are deposited on the lower surface of the substrate 200 to be processed through the mask opening 22 of the chip 20.

また、図３および図４に示す成膜用マスク部材１０を用いて被成膜領域の所定領域に成膜を行った後、成膜用マスク部材１０をずらしながら複数回、成膜することにより、被成膜領域全体にわたってストライプ状の薄膜を順次形成することができる。   In addition, after forming a film in a predetermined region of the film formation region using the film formation mask member 10 shown in FIGS. 3 and 4, the film formation mask member 10 is formed a plurality of times while being shifted. A striped thin film can be sequentially formed over the entire film formation region.

（成膜用マスク部材１０の基板接触面の性状）
本形態の成膜用マスク部材１０において、チップ２０の上面は、マスク蒸着の際、被処理基板２００と接触した状態で重ねられる基板接触面２０ａであり、本形態において、基板接触面２０ａの水に対する接触角は１００°であり、極めて大きい。 (Properties of substrate contact surface of mask member 10 for film formation)
In the mask member 10 for film formation according to this embodiment, the upper surface of the chip 20 is a substrate contact surface 20a that is stacked in contact with the substrate 200 during mask vapor deposition. In this embodiment, water on the substrate contact surface 20a The contact angle with respect to is 100 °, which is extremely large.

従って、図５（ａ）、（ｂ）に示すように、本形態の成膜用マスク部材１０を用いて被処理基板２００に先に形成されている薄膜２１０の上層にさらに新たな薄膜２２０を形成する際、被処理基板２００に先に形成されている薄膜と成膜用マスク部材１０とが接触する場合でも、蒸着後、被処理基板２００から成膜用マスク部材１０を外す際、図５（ｂ）に示すように、先に形成されていた薄膜２１０が剥がれることがない。   Therefore, as shown in FIGS. 5A and 5B, a new thin film 220 is further formed on the upper layer of the thin film 210 previously formed on the substrate to be processed 200 using the film forming mask member 10 of this embodiment. Even when the thin film previously formed on the substrate to be processed 200 and the film formation mask member 10 come into contact with each other when forming, when the film formation mask member 10 is removed from the substrate to be processed 200 after vapor deposition, FIG. As shown in (b), the previously formed thin film 210 is not peeled off.

また、例えば、図６（ａ）〜（ｅ）に示すように、成膜用マスク部材１０を用いて、複数のパターン２４０、２５０を交互に形成するには、図６（ａ）、（ｂ）に示すように、成膜用マスク部材１０を用いて一回目のマスク蒸着でパターン２４０を一定間隔ごとに形成した後、図６（ｃ）、（ｄ）に示すように、成膜用マスク部材１０の位置をずらして、先に形成したパターン２４０の間に、一定間隔をおいて新たにパターン２５０を形成する。その際、図６（ｃ）に示すように、被処理基板２００に先に形成されているパターン２４０と成膜用マスク部材１０が接触することになるが、本形態の成膜用マスク部材１０によれば、蒸着後、被処理基板２００から成膜用マスク部材１０を外す際、先に形成されていたパターン２４０の一部２４０ａが剥がれることがない。なお、３種類のパターンを交互に形成する場合も同様である。   Further, for example, as shown in FIGS. 6A to 6E, in order to alternately form a plurality of patterns 240 and 250 using the film forming mask member 10, FIGS. As shown in FIGS. 6C and 6D, after the pattern 240 is formed at regular intervals by the first mask vapor deposition using the film forming mask member 10, as shown in FIGS. The position of the member 10 is shifted, and a new pattern 250 is formed between the previously formed patterns 240 at a predetermined interval. At this time, as shown in FIG. 6C, the pattern 240 previously formed on the substrate to be processed 200 comes into contact with the film forming mask member 10, but the film forming mask member 10 of the present embodiment. According to the above, after the deposition, when the film forming mask member 10 is removed from the substrate to be processed 200, the part 240a of the pattern 240 previously formed is not peeled off. The same applies when three types of patterns are alternately formed.

それ故、本形態の成膜用マスク部材１０によれば、被処理基板２００に対して、薄膜２１０あるいは複数のパターン２４０、２５０として、図１に示す有機ＥＬ素子３ａの正孔注入輸送層５、有機ＥＬ材料からなる発光層６、電子を注入／輸送する電子注入輸送層７、陰極８、補助配線８ａをマスク蒸着法により順次、積層していく場合でも、先に形成した薄膜の損傷や剥離に起因する不具合が発生しない。また、本形態の成膜用マスク部材１０によれば、上記の不具合が発生しないので、被処理基板２００と成膜用マスク部材１０とを接触させた状態で成膜することができ、高い精度でパターンを形成することができる。   Therefore, according to the film forming mask member 10 of the present embodiment, the hole injecting and transporting layer 5 of the organic EL element 3a shown in FIG. 1 as the thin film 210 or the plurality of patterns 240 and 250 with respect to the substrate 200 to be processed. Even when the light emitting layer 6 made of an organic EL material, the electron injecting and transporting layer 7 for injecting / transporting electrons, the cathode 8 and the auxiliary wiring 8a are sequentially stacked by the mask vapor deposition method, No defects caused by peeling occur. Further, according to the film forming mask member 10 of the present embodiment, the above-described problems do not occur, and therefore, the film can be formed in a state where the substrate to be processed 200 and the film forming mask member 10 are in contact with each other, and high accuracy is achieved. Can form a pattern.

（成膜用マスク部材１０の製造方法１）
図７は、本発明を適用した成膜用マスク部材の製造工程において、撥水処理を行うためのプラズマ処理装置の構成を模式的に示す説明図である。 (Manufacturing method 1 of mask member 10 for film formation)
FIG. 7 is an explanatory view schematically showing a configuration of a plasma processing apparatus for performing a water repellent process in a manufacturing process of a film forming mask member to which the present invention is applied.

図３および図４に示す成膜用マスク部材１０を製造するにあたっては、まず、複数のチップ２０に対して、フォトリソグラフィ技術やエッチング処理を施すことにより、複数のチップ２０の各々に対して成膜パターンに対応する長孔形状のマスク開口部２２を複数形成する。そして、この複数のチップ２０を支持基板３０に固定させた後、図７に示すプラズマ処理装置５００（撥水処理装置）を用いてチップ２０の基板接触面２０ａに対して撥水処理を施す。   In manufacturing the film forming mask member 10 shown in FIG. 3 and FIG. 4, first, a plurality of chips 20 are formed on each of the plurality of chips 20 by performing a photolithography technique or an etching process. A plurality of long hole-shaped mask openings 22 corresponding to the film pattern are formed. Then, after fixing the plurality of chips 20 to the support substrate 30, a water repellent treatment is performed on the substrate contact surface 20a of the chip 20 using a plasma processing apparatus 500 (water repellent treatment apparatus) shown in FIG.

図７に示すように、プラズマ処理装置５００は、真空チャンバー５１内に、第１の電極５３と第２の電極５４とを上下平行に対向した平行平板型リアクティブイオンエッチング装置として構成されている。真空チャンバー５１には、例えば、その上面にガス導入口５１ａが開口し、底面には排気口５１ｂが開口し、下方位置かつ側面には、成膜用マスク部材１０の搬出入を行うための連絡口５１ｃが形成されている。真空チャンバー５１の内部において、上方位置には平板状の第１の電極５３が配置され、真空チャンバー５１の下方位置には、第１の電極５３に対向するように平板状の第２の電極５４が配置されている。第１の電極５３は接地されている一方、第２の電極５４には高周波電源５９が接続されている。   As shown in FIG. 7, the plasma processing apparatus 500 is configured in a vacuum chamber 51 as a parallel plate type reactive ion etching apparatus in which a first electrode 53 and a second electrode 54 are vertically opposed to each other. . In the vacuum chamber 51, for example, a gas inlet 51a is opened on the top surface, an exhaust port 51b is opened on the bottom surface, and communication for carrying in and out the film forming mask member 10 is performed on the lower position and the side surface. A mouth 51c is formed. Inside the vacuum chamber 51, a flat plate-like first electrode 53 is arranged at an upper position, and at a lower position of the vacuum chamber 51, a flat plate-like second electrode 54 so as to face the first electrode 53. Is arranged. The first electrode 53 is grounded, while the second electrode 54 is connected to a high frequency power source 59.

このように構成されたプラズマ処理装置５００を用いて、図３および図４に示した成膜用マスク部材１０に対して撥水処理を行う際は、まず、第２の電極５４上に複数のチップ２０が固定された支持基板３０を載せ、チップ２０の基板接触面２０ａが第１の電極５３に向くよう配置する。その後、ガス導入口５１ａよりフッ素系のガス（例えば、ＣＨＦ３ガス）を導入するとともに、高周波電源５９によって第２の電極５４に高周波電圧を印加する。これにより、チップ２０の基板接触面２０ａにおいては、フッ素系ガスによるエッチングや化学反応が起き、その結果、チップ２０の基板接触面２０ａには撥水性を有するフッ素系重合膜が形成される。 When the water repellent treatment is performed on the film forming mask member 10 shown in FIGS. 3 and 4 using the plasma processing apparatus 500 configured as described above, first, a plurality of layers are formed on the second electrode 54. The support substrate 30 to which the chip 20 is fixed is placed, and the substrate contact surface 20 a of the chip 20 is disposed so as to face the first electrode 53. Thereafter, a fluorine-based gas (for example, CHF 3 gas) is introduced from the gas introduction port 51 a and a high-frequency voltage is applied to the second electrode 54 by the high-frequency power source 59. As a result, etching or chemical reaction with the fluorine-based gas occurs on the substrate contact surface 20a of the chip 20, and as a result, a fluorine-based polymer film having water repellency is formed on the substrate contact surface 20a of the chip 20.

ここで、成膜用マスク部材１０の一方面における水に対する接触角が１００°以上であると、薄膜を構成するための蒸着材料に対する離型効果が高い。このような条件を満たす成膜用マスク部材１０を製造するためには、例えば、上述した撥水処理工程において、ガス導入口５１ａより導入されるフッ素系ガスの流量を３０sccm（standard cc/min：常温常圧（例えば、１atm、２５℃）に換算した流量）、真空チャンバー５１内の圧力を０．２Torr（２６．６６Pa）、高周波電源５９のパワーを２５Ｗ、処理時間を１分以上とすることにより、成膜用マスク部材１０に対するダメージを小さくしつつ、成膜用マスク部材１０の基板接触面２０ａの水の接触角を１０５°以上とすることができる。   Here, when the contact angle with respect to water on one surface of the film forming mask member 10 is 100 ° or more, the mold release effect for the vapor deposition material for constituting the thin film is high. In order to manufacture the film forming mask member 10 satisfying such conditions, for example, in the above-described water repellent treatment step, the flow rate of the fluorine-based gas introduced from the gas inlet 51a is 30 sccm (standard cc / min: The flow rate converted to normal temperature and normal pressure (for example, 1 atm, 25 ° C.), the pressure in the vacuum chamber 51 is 0.2 Torr (26.66 Pa), the power of the high frequency power supply 59 is 25 W, and the processing time is 1 minute or more. Thus, the contact angle of water on the substrate contact surface 20a of the film forming mask member 10 can be set to 105 ° or more while reducing damage to the film forming mask member 10.

すなわち、上述した撥水処理を施さない成膜用マスク部材においては、チップ２０の表面は自然酸化膜で覆われており、これにより、チップ２０の表面にはヒドロキシル基が多く存在するため、撥水性および薄膜を構成するための蒸着材料に対する離型性が低いが、本形態では、上述したように、成膜用マスク部材１０においてチップ２０の基板接触面２０ａに、酸化膜を除去しながら、撥水性を有するフッ素系重合膜を形成するので、成膜用マスク部材１０の基板接触面２０ａの離型性を高めることができる。   That is, in the film forming mask member that is not subjected to the water repellent treatment described above, the surface of the chip 20 is covered with a natural oxide film, and as a result, there are many hydroxyl groups on the surface of the chip 20. Although the releasability with respect to the vapor deposition material for constituting the aqueous film and the thin film is low, in this embodiment, as described above, while removing the oxide film on the substrate contact surface 20a of the chip 20 in the film forming mask member 10, Since the fluoropolymer film having water repellency is formed, the releasability of the substrate contact surface 20a of the film forming mask member 10 can be improved.

なお、上記の方法では、成膜用マスク部材１０の製造工程の最後に撥水処理を行なったが、チップ２０の状態で撥水処理を行なった後、チップ２０を支持基板３０に接合してもよい。   In the above method, the water repellent treatment is performed at the end of the manufacturing process of the film forming mask member 10. However, after the water repellent treatment is performed in the state of the chip 20, the chip 20 is bonded to the support substrate 30. Also good.

（成膜用マスク部材１０の製造方法２）
上記の製造方法では、成膜用マスク部材１０に対するプラズマ照射を利用したが、成膜用マスク部材１０を撥水処理液に浸漬するなどの方法でチップ２０の基板接触面２０ａに撥水処理液を接触させてもよい。このような撥水処理液としては、例えば、フッ素系シランカップリング剤（信越化学社製、シランカップリング剤ＫＢＭ）や、フッ素系溶剤にフッ素ポリマーを分散させた液体（フロロテクノロジー社製、フロロサーフＦＧ−５０３０Ｚシリーズ）を用いることができる。 (Manufacturing method 2 of mask member 10 for film formation)
In the manufacturing method described above, plasma irradiation on the film forming mask member 10 is used. However, the water repellent treatment liquid is applied to the substrate contact surface 20a of the chip 20 by a method such as immersing the film forming mask member 10 in the water repellent treatment liquid. May be contacted. Examples of such a water repellent treatment liquid include a fluorine-based silane coupling agent (manufactured by Shin-Etsu Chemical Co., Ltd., silane coupling agent KBM), and a liquid in which a fluorine polymer is dispersed in a fluorine-based solvent (manufactured by Fluoro Technology, Fluorosurf FG-5030Z series) can be used.

なお、上記の方法でも、成膜用マスク部材１０の製造工程の最後に撥水処理を行なったが、チップ２０の状態で撥水処理を行なった後、チップ２０を支持基板３０に接合してもよい。   In the above method, the water repellent treatment is performed at the end of the manufacturing process of the film forming mask member 10, but after the water repellent treatment is performed in the state of the chip 20, the chip 20 is bonded to the support substrate 30. Also good.

［成膜工程での撥水処理１］
上記形態では、成膜用マスク部材１０の製造工程において、チップ２０の基板接触面２０ａに対して撥水処理を行なったが、成膜用マスク部材１０の製造工程での撥水処理に代えて、あるいは成膜用マスク部材１０の製造工程での撥水処理に加えて、成膜工程の中で撥水処理を行なってもよい。この場合、成膜用マスク部材１０を用いて成膜を１回、行なう度に撥水処理を行なってもよいが、成膜用マスク部材１０を用いて成膜を所定の回数、行なった後、撥水処理を行なってもよい。 [Water repellent treatment 1 in film formation process]
In the above embodiment, the water repellent treatment is performed on the substrate contact surface 20a of the chip 20 in the manufacturing process of the film forming mask member 10, but instead of the water repellent processing in the manufacturing process of the film forming mask member 10. Alternatively, in addition to the water repellent treatment in the manufacturing process of the film forming mask member 10, the water repellent treatment may be performed in the film forming step. In this case, the water-repellent treatment may be performed each time the film formation is performed using the film formation mask member 10, but after the film formation is performed a predetermined number of times using the film formation mask member 10. A water repellent treatment may be performed.

このような成膜方法を実施するには、例えば、成膜装置を図８を参照して説明するように構成すればよい。図８は、本発明を適用した成膜装置の概略平面図である。   In order to implement such a film forming method, for example, the film forming apparatus may be configured as described with reference to FIG. FIG. 8 is a schematic plan view of a film forming apparatus to which the present invention is applied.

図８に示す成膜装置６００は、大気とは異なる雰囲気下で被処理基板２００に対して複数の処理を施すための装置であり、図１に示した有機ＥＬ装置１などを製造する際に用いられる。成膜装置６００は、大気と異なる雰囲気中で成膜処理工程などを行う処理ステーション７００、８００とを有しているととともに、処理ステーション７００と処理ステーション８００とは、搬送路６１によって連結されている。   A film forming apparatus 600 shown in FIG. 8 is an apparatus for performing a plurality of processes on the substrate to be processed 200 in an atmosphere different from the atmosphere. When the organic EL apparatus 1 shown in FIG. Used. The film forming apparatus 600 includes processing stations 700 and 800 for performing a film forming process in an atmosphere different from the atmosphere, and the processing station 700 and the processing station 800 are connected by a transfer path 61. Yes.

処理ステーション７００は、内部を真空雰囲気に置換可能なチャンバー７１と、チャンバー７１の内部に配置された基板搬送ロボット７２と、チャンバー７１の側面に接続された複数の処理室７５とを備えている。チャンバー７１の辺部７１ａは、前段の処理ステーションからの基板搬入部７６と接続され、チャンバー７１の辺部７１ｂは、搬送路６１と接続されている。チャンバー７１と、処理室７５および基板搬入部７６とは、ゲートバルブ（図示せず）を介して連通し、チャンバー７１と搬送路６１もゲートバルブ（図示せず）を介して連通している。処理ステーション８００も、処理ステーション７００と同様、内部を真空雰囲気に置換可能なチャンバー８１と、チャンバー８１の内部に配置された基板搬送ロボット８２と、内部を真空雰囲気に置換可能なチャンバー８１と、チャンバー８１の内部に配置された基板搬送ロボット８２と、チャンバー８１の側面に接続された複数の処理室８５とを備えている。チャンバー８１の辺部８１ａは、搬送路６１に接続され、チャンバー８１の辺部８１ｂは、被処理基板２００を搬出する基板搬出部８６と接続されている。チャンバー８１と、各処理室８５および基板搬出部８６とは、ゲートバルブ（図示せず）を介して連通し、チャンバー８１と搬送路６１もゲートバルブ（図示せず）を介して連通している。   The processing station 700 includes a chamber 71 whose inside can be replaced with a vacuum atmosphere, a substrate transfer robot 72 disposed inside the chamber 71, and a plurality of processing chambers 75 connected to the side surface of the chamber 71. The side portion 71 a of the chamber 71 is connected to the substrate carry-in portion 76 from the previous processing station, and the side portion 71 b of the chamber 71 is connected to the transport path 61. The chamber 71 communicates with the processing chamber 75 and the substrate carry-in section 76 via a gate valve (not shown), and the chamber 71 and the transfer path 61 also communicate with each other via a gate valve (not shown). Similarly to the processing station 700, the processing station 800 also has a chamber 81 that can be replaced with a vacuum atmosphere, a substrate transfer robot 82 that is disposed inside the chamber 81, a chamber 81 that can be replaced with a vacuum atmosphere, and a chamber. A substrate transfer robot 82 disposed inside 81 and a plurality of processing chambers 85 connected to the side surface of the chamber 81 are provided. A side portion 81 a of the chamber 81 is connected to the transfer path 61, and a side portion 81 b of the chamber 81 is connected to a substrate carry-out portion 86 that carries out the substrate to be processed 200. The chamber 81 communicates with each processing chamber 85 and the substrate carry-out portion 86 via a gate valve (not shown), and the chamber 81 and the transfer path 61 also communicate with each other via a gate valve (not shown). .

このように構成した成膜装置６００において、複数の処理室７５、８５には、正孔注入輸送層５、発光層６、電子注入輸送層７、陰極８、または補助陰極８ａを形成するための成膜室（成膜エリア）と、成膜用マスク部材１０の基板接触面２０ａに対して、プラズマあるいは撥水処理剤を用いた撥水処理室（撥水処理エリア）とが含まれている。従って、成膜用マスク部材１０を用いて成膜を１回、行なう度、あるいは成膜用マスク部材１０を用いて成膜を所定の回数、行なった後、成膜用マスク部材１０の基板接触面２０ａに対して撥水処理を行なうことができる。   In the film forming apparatus 600 configured as described above, the plurality of processing chambers 75 and 85 are provided with the hole injection transport layer 5, the light emitting layer 6, the electron injection transport layer 7, the cathode 8, or the auxiliary cathode 8a. A film formation chamber (film formation area) and a water repellent treatment chamber (water repellent treatment area) using plasma or a water repellent treatment agent are included for the substrate contact surface 20 a of the film formation mask member 10. . Therefore, each time the film formation is performed using the film formation mask member 10, or after the film formation is performed a predetermined number of times using the film formation mask member 10, the substrate contact of the film formation mask member 10 is performed. Water repellent treatment can be performed on the surface 20a.

［成膜工程での撥水処理２］
図９（ａ）、（ｂ）は各々、本発明を適用した別の成膜装置の構成を模式的に示す平面図および断面図である。なお、以下では、被基板基板２００の搬送方向を矢印Ｌで示してある。 [Water repellent treatment 2 in film formation process]
9A and 9B are a plan view and a cross-sectional view, respectively, schematically showing the configuration of another film forming apparatus to which the present invention is applied. In the following, the transport direction of the substrate 200 is indicated by an arrow L.

図９（ａ）、（ｂ）に示すように、本形態のインライン式の成膜装置９００は、大気とは異なる雰囲気下で複数の被処理基板２００に対して、複数の処理を連続的に施すための装置であり、図１に示した有機ＥＬ装置１を製造する際に用いられる。本形態のインライン式の成膜装置９００は、被処理基板２００を搬送する基板搬送手段として、被基板基板２００の搬送方向に沿って複数のローラ９８（図９（ｂ）では図示を省略）が直線的に配置されており、ローラ９８は、被基板基板２００の搬送方向と直交する方向に２列、配置されている。成膜装置９００では、複数のローラ９８によって規定された被処理基板２００の搬送経路に沿って複数の成膜エリア９１、９２、９３・・が配置されている。各成膜エリア９１、９２、９３・・の間には基板通路９０３が形成されている。なお、基板通路９０３には、成膜エリア９１０、９２０、９３０・・内の雰囲気が汚染されることを防止するためのシャッタ（図示せず）が配置されることがある。また、各成膜エリア９１、９２、９３・・には各々の内部の真空度を調整可能な真空引き装置（図示せず）が接続されている。   As shown in FIGS. 9A and 9B, the in-line film forming apparatus 900 of this embodiment continuously performs a plurality of processes on a plurality of substrates to be processed 200 in an atmosphere different from the atmosphere. It is an apparatus for applying, and is used when manufacturing the organic EL device 1 shown in FIG. In the in-line type film forming apparatus 900 of this embodiment, a plurality of rollers 98 (not shown in FIG. 9B) are provided as substrate transfer means for transferring the substrate 200 to be processed along the transfer direction of the substrate 200 to be processed. The rollers 98 are arranged in a straight line, and the rollers 98 are arranged in two rows in a direction orthogonal to the transport direction of the substrate 200 to be substrate. In the film forming apparatus 900, a plurality of film forming areas 91, 92, 93... Are arranged along the conveyance path of the substrate 200 to be processed defined by the plurality of rollers 98. A substrate passage 903 is formed between the film forming areas 91, 92, 93,. In the substrate passage 903, a shutter (not shown) for preventing the atmosphere in the film forming areas 910, 920, 930,. Further, a vacuuming device (not shown) capable of adjusting the degree of vacuum inside each of the film forming areas 91, 92, 93,.

各成膜エリア９１、９２、９３・・において、複数のローラ９８により規定された被処理基板２００の搬送経路の下方位置には蒸着源９１１、９２１、９３１・・が配置されている。本形態において、蒸着源９１１、９２１、９３１・・は、各成膜エリア９１、９２、９３・・に１つずつ配列されているが、複数、配置される場合もある。蒸着源９１１、９２１、９３１・・は各々、実施の形態１の成膜装置４００と同様に、蒸着材料が装填された坩堝４４と、坩堝４４内の蒸着材料を加熱するための加熱装置４３とを備えている。また、蒸着源９１１、９２１、９３１・・の各々に対しては、坩堝４４の開口を開閉可能なセルシャッタ（図示せず）が配置されている。   In each of the film forming areas 91, 92, 93,..., Vapor deposition sources 911, 921, 931,... Are disposed at positions below the conveyance path of the substrate 200 to be processed, which are defined by the plurality of rollers 98. In this embodiment, the vapor deposition sources 911, 921, 931,... Are arranged one by one in each of the film formation areas 91, 92, 93,. The vapor deposition sources 911, 921, 931... Each have a crucible 44 loaded with a vapor deposition material, and a heating device 43 for heating the vapor deposition material in the crucible 44, as in the film forming apparatus 400 of the first embodiment. It has. Further, a cell shutter (not shown) capable of opening and closing the opening of the crucible 44 is disposed for each of the vapor deposition sources 911, 921, 931.

本形態の成膜装置９００を用いて有機ＥＬ装置１を形成する際は、成膜エリア９１０、９２０、９３０・・を用いて、正孔注入輸送層５、発光層６、電子注入輸送層７、陰極８を形成する。また、各成膜エリア９１、９２、９３・・のいずかの間、成膜エリア９１、９２、９３・・・の最上流、あるいは成膜エリア９１、９２、９３・・・の最下流には、成膜用マスク部材１０の基板接触面２０ａに対して、プラズマあるいは撥水処理剤を用いた撥水処理エリア（図示せず）が構成されている。従って、成膜用マスク部材１０を用いての成膜を行なう度に成膜用マスク部材１０の基板接触面２０ａに対して撥水処理を行なうことができ、その後、成膜用マスク部材１０を用いる際には、成膜前に撥水処理を行なった成膜用マスク部材１０を用いて成膜を行なうことができる。   When forming the organic EL device 1 using the film forming apparatus 900 of this embodiment, the hole injection transport layer 5, the light emitting layer 6, and the electron injection transport layer 7 are formed using the film forming areas 910, 920, 930. Then, the cathode 8 is formed. Further, between each of the film forming areas 91, 92, 93,..., The most upstream of the film forming areas 91, 92, 93, or the most downstream of the film forming areas 91, 92, 93,. A water repellent treatment area (not shown) using plasma or a water repellent treatment agent is formed on the substrate contact surface 20a of the film forming mask member 10. Accordingly, each time a film is formed using the film forming mask member 10, the substrate contact surface 20a of the film forming mask member 10 can be subjected to water repellent treatment. When used, film formation can be performed using the film formation mask member 10 that has been subjected to water repellent treatment before film formation.

［その他の実施の形態］
本発明の技術範囲は上記各実施形態に限定されるものではなく、本発明の趣旨を逸脱しない範囲において種々の変更を加えることが可能である。例えば、上記形態については、真空蒸着法に用いる成膜用マスク部材を説明したが、スパッタ成膜法やイオンプレーティング法などの蒸着法、さらにはＣＶＤ法に用いる成膜用マスク部材に本発明を適用することができる。また、近年、イオンプレーティング法についてはプラズマを利用したプラズマコーティングが提案されており、かかる蒸着法に用いる成膜用マスク部材に対しても、本発明を適用することができる。 [Other embodiments]
The technical scope of the present invention is not limited to the above embodiments, and various modifications can be made without departing from the spirit of the present invention. For example, in the above-described embodiment, the film forming mask member used in the vacuum vapor deposition method has been described. However, the present invention is applicable to the film forming mask member used in the vapor deposition method such as the sputtering film forming method and the ion plating method, and also the CVD method. Can be applied. In recent years, plasma coating using plasma has been proposed for the ion plating method, and the present invention can also be applied to a film forming mask member used in such a vapor deposition method.

さらに、上記形態では、有機ＥＬ装置１の薄膜（正孔注入輸送層５、発光層６、電子注入輸送層７、陰極８、補助配線８ａ）を形成するための成膜用マスク部材に本発明を適用したが、液晶装置その他の電気光学装置や半導体装置の製造工程において、ストライプ状の薄膜を形成する成膜用マスク部材に本発明を適用してもよい。   Furthermore, in the above embodiment, the present invention is applied to a film forming mask member for forming a thin film (hole injection transport layer 5, light emitting layer 6, electron injection transport layer 7, cathode 8, auxiliary wiring 8a) of the organic EL device 1. However, the present invention may be applied to a film forming mask member for forming a stripe-shaped thin film in a manufacturing process of a liquid crystal device or other electro-optical device or semiconductor device.

さらにまた、上記形態においては、チップ２０を単結晶シリコンによって形成したが、チップ２０を、フッ素系のガスもしくは撥水剤に対してある程度の耐性を有する金属で形成した場合でも本発明を適用することができる。   Furthermore, in the above embodiment, the chip 20 is formed of single crystal silicon, but the present invention is applied even when the chip 20 is formed of a metal having a certain degree of resistance to a fluorine-based gas or water repellent. be able to.

本発明が適用される有機ＥＬ装置の要部断面図である。It is principal part sectional drawing of the organic electroluminescent apparatus with which this invention is applied. 本発明を適用した成膜用マスク部材を用いて成膜を行う成膜装置の構成を示す概略構成図である。It is a schematic block diagram which shows the structure of the film-forming apparatus which forms into a film using the mask member for film-forming to which this invention is applied. 本発明を適用した成膜用マスク部材全体の基本的構成を示す斜視図である。It is a perspective view which shows the fundamental structure of the whole film-forming mask member to which this invention is applied. 本発明を適用した成膜用マスク部材の一部を拡大してチップの基本的構成を示す説明図である。It is explanatory drawing which expands a part of film-forming mask member to which this invention is applied, and shows the fundamental structure of a chip | tip. 本発明を適用した成膜用マスク部材を用いた成膜方法を示す工程図である。It is process drawing which shows the film-forming method using the mask member for film-forming to which this invention is applied. 本発明を適用した成膜用マスク部材を用いた別の成膜方法を示す工程図である。It is process drawing which shows another film-forming method using the mask member for film-forming to which this invention is applied. 本発明を適用した成膜用マスク部材に撥水処理を行うためのプラズマ処理装置の構成を模式的に示す説明図である。It is explanatory drawing which shows typically the structure of the plasma processing apparatus for performing a water repellent process to the film-forming mask member to which this invention is applied. 本発明を適用した成膜装置の概略平面図である。It is a schematic plan view of the film-forming apparatus to which this invention is applied. （ａ）、（ｂ）は各々、本発明を適用した別の成膜装置の構成を模式的に示す平面図および断面図である。(A), (b) is the top view and sectional drawing which show typically the structure of another film-forming apparatus to which this invention is applied, respectively. 従来の成膜用マスク部材で成膜したときの問題点を示す説明図である。It is explanatory drawing which shows a problem when it forms into a film with the conventional film-forming mask member. 従来の成膜用マスク部材で成膜したときの別の問題点を示す説明図である。It is explanatory drawing which shows another problem when it forms into a film with the conventional film-forming mask member.

符号の説明Explanation of symbols

１・・有機ＥＬ装置、２・・素子基板、３・・画素、３ａ・・有機ＥＬ素子、４・・画素電極、５・・正孔注入輸送層、６、６Ｒ、６Ｇ、６Ｂ・・発光層、７・・電子注入輸送層、８・・陰極、８ａ・・補助配線、１０・・成膜用マスク部材、２０・・チップ、２０ａ・・基板接触面、３０・・支持基板、２００・・被処理基板、５００・・プラズマ処理装置（撥水処理装置）、６００、９００・・成膜装置 1 .... Organic EL device 2 .... Element substrate 3 .... Pixel 3a .... Organic EL element 4 .... Pixel electrode 5 .... Hole injection transport layer 6,6R, 6G, 6B ... Layer, 7 .. electron injection transport layer, 8 .. cathode, 8 a .. auxiliary wiring, 10 .. mask member for film formation, 20 .. chip, 20 a .. substrate contact surface, 30 .. support substrate, 200. -Substrate to be processed, 500-Plasma processing equipment (water repellent treatment equipment), 600, 900-Film-forming equipment

Claims (8)

被処理基板に対する成膜パターンに対応するマスク開口部が形成された成膜用マスク部材において、
前記被処理基板に重ねられる基板接触面の水に対する接触角が１００°以上であることを特徴とする成膜用マスク部材。 In the film formation mask member in which the mask opening corresponding to the film formation pattern for the substrate to be processed is formed,
A film forming mask member, wherein a contact angle with respect to water of a substrate contact surface superimposed on the substrate to be processed is 100 ° or more. 被処理基板に対する成膜パターンに対応するマスク開口部が形成された成膜用マスク部材の製造方法において、
前記被処理基板に重ねられる基板接触面に対して撥水処理を行なうことを特徴とする成膜用マスク部材の製造方法。 In the manufacturing method of the mask member for film formation in which the mask opening corresponding to the film formation pattern for the substrate to be processed is formed,
A method for producing a film-forming mask member, comprising performing a water-repellent treatment on a substrate contact surface that is superimposed on the substrate to be processed. 前記撥水処理では、前記基板接触面にフッ素系ガスを用いたプラズマ処理を行なうことを特徴とする請求項２に記載の成膜用マスク部材の製造方法。   3. The method of manufacturing a film forming mask member according to claim 2, wherein in the water repellent treatment, a plasma treatment using a fluorine-based gas is performed on the substrate contact surface. 前記撥水処理では、撥水処理液を前記基板接触面に接触させることを特徴とする請求項２に記載の成膜用マスク部材の製造方法。   3. The method of manufacturing a film forming mask member according to claim 2, wherein in the water repellent treatment, a water repellent treatment liquid is brought into contact with the substrate contact surface. 被処理基板に対する成膜パターンに対応するマスク開口部が形成された成膜用マスク部材を前記被処理基板に重ねた状態で成膜を行なうマスク成膜方法において、
成膜を行なう前に、前記成膜用マスク部材において前記被処理基板に重ねられる基板接触面に対して撥水処理を行なうことを特徴とするマスク成膜方法。 In a mask film forming method for performing film formation in a state where a film forming mask member in which a mask opening corresponding to a film forming pattern for a substrate to be processed is formed is overlaid on the substrate to be processed,
A mask film-forming method, comprising: performing a water-repellent treatment on a substrate contact surface that is superimposed on the substrate to be processed in the film-forming mask member before film formation. 前記撥水処理では、前記基板接触面にフッ素系ガスを用いたプラズマ処理を行なうことを特徴とする請求項５に記載のマスク成膜方法。   6. The mask film forming method according to claim 5, wherein in the water repellent treatment, plasma treatment using a fluorine-based gas is performed on the substrate contact surface. 前記撥水処理では、撥水剤を含む処理液を前記基板接触面に接触させることを特徴とする請求項５に記載のマスク成膜方法。   6. The mask film forming method according to claim 5, wherein in the water repellent treatment, a treatment liquid containing a water repellent is brought into contact with the substrate contact surface. 被処理基板に対する成膜パターンに対応するマスク開口部が形成された成膜用マスク部材を前記被処理基板に重ねた状態で成膜を行なう成膜装置において、
複数の成膜エリアと、前記成膜用マスク部材において前記被処理基板に重ねられる基板接触面に対して撥水処理を行なう撥水処理エリアとを備えていることを特徴とする成膜装置。 In a film forming apparatus for forming a film in a state in which a film forming mask member in which a mask opening corresponding to a film forming pattern for a substrate to be processed is formed is overlaid on the substrate to be processed.
A film forming apparatus comprising: a plurality of film forming areas; and a water repellent treatment area for performing a water repellent treatment on a substrate contact surface that is superimposed on the substrate to be processed in the film forming mask member.
JP2007061349A 2007-03-12 2007-03-12 Mask member for film deposition, manufacturing method of mask member for film deposition, mask film deposition method, and film deposition apparatus Withdrawn JP2008223067A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007061349A JP2008223067A (en) 2007-03-12 2007-03-12 Mask member for film deposition, manufacturing method of mask member for film deposition, mask film deposition method, and film deposition apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007061349A JP2008223067A (en) 2007-03-12 2007-03-12 Mask member for film deposition, manufacturing method of mask member for film deposition, mask film deposition method, and film deposition apparatus

Publications (1)

Publication Number Publication Date
JP2008223067A true JP2008223067A (en) 2008-09-25

Family

ID=39842024

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007061349A Withdrawn JP2008223067A (en) 2007-03-12 2007-03-12 Mask member for film deposition, manufacturing method of mask member for film deposition, mask film deposition method, and film deposition apparatus

Country Status (1)

Country Link
JP (1) JP2008223067A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013030476A (en) * 2011-06-24 2013-02-07 Semiconductor Energy Lab Co Ltd Light-emitting panel, light-emitting apparatus using light-emitting panel, and method of manufacturing light-emitting panel
JP2014123528A (en) * 2012-12-21 2014-07-03 Semiconductor Energy Lab Co Ltd Light-emitting device and method for manufacturing the same
JP2019210496A (en) * 2018-06-01 2019-12-12 京畿大学校産学協力団 Fine metal mask for manufacturing organic light-emitting diode panel

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013030476A (en) * 2011-06-24 2013-02-07 Semiconductor Energy Lab Co Ltd Light-emitting panel, light-emitting apparatus using light-emitting panel, and method of manufacturing light-emitting panel
US9502676B2 (en) 2011-06-24 2016-11-22 Semiconductor Energy Laboratory Co., Ltd. Light-emitting panel, light-emitting device using the light-emitting panel, and method for manufacturing the light-emitting panel
US9917274B2 (en) 2011-06-24 2018-03-13 Semiconductor Energy Laboratory Co., Ltd. Light-emitting panel, light-emitting device using the light-emitting panel, and method for manufacturing the light-emitting panel
JP2014123528A (en) * 2012-12-21 2014-07-03 Semiconductor Energy Lab Co Ltd Light-emitting device and method for manufacturing the same
JP2019210496A (en) * 2018-06-01 2019-12-12 京畿大学校産学協力団 Fine metal mask for manufacturing organic light-emitting diode panel

Similar Documents

Publication Publication Date Title
US11569487B2 (en) Mask assembly, apparatus and method of manufacturing display device using the same, and display device
CN100447946C (en) Mask, mask chip, manufacturing method of mask, manufacturing method of mask chip, and electronic device
JP2004342455A (en) Flat panel display manufacturing device
TWI616546B (en) Multi-nozzle organic vapor jet printing
US7074694B2 (en) Deposition mask, manufacturing method thereof, display unit, manufacturing method thereof, and electronic apparatus including display unit
JP2008196003A (en) Mask for vapor deposition, mask vapor deposition method, and method for producing organic electroluminescence apparatus
WO2006041240A1 (en) Large-size oled manufacturing apparatus using ink- jet printing techniques and low molecule thermal deposition techniques
JP2007073355A (en) Method for manufacturing organic electroluminescence element
KR102424976B1 (en) A mask assembly, apparatus and method for manufacturing a display apparatus using the same
US20090206728A1 (en) Light-emitting device, method for manufacturing light-emitting device, and substrate processing apparatus
JP4222035B2 (en) Precision mask for film formation and manufacturing method thereof, electroluminescence display device and manufacturing method thereof, electronic apparatus
JP2007073353A (en) Method for manufacturing organic electroluminescence element
US9982339B2 (en) Film-forming mask, film-forming device, and film-forming method
KR101483193B1 (en) Method for manufacturing thin film pattern and optical device using the same
KR102527121B1 (en) Film forming apparatus, manufacturing apparatus of organic device, and manufacturing method of organic device
JP2013073880A (en) Light emitting element manufacturing method
JP2008208426A (en) Mask for film deposition and method for producing mask for film deposition
JP2008223067A (en) Mask member for film deposition, manufacturing method of mask member for film deposition, mask film deposition method, and film deposition apparatus
US10790447B2 (en) Mask for thin film deposition, method of manufacturing the same, and method of manufacturing a display apparatus using the same
KR102225335B1 (en) Menufacturing method of metal mask sheet for oled
KR100470260B1 (en) Method and apparatus for manufacturing active matrix device including top gate type tft
JP2008305560A (en) Manufacturing method of organic el display device
WO2007073072A1 (en) Mask apparatus for divided deposition of substrate and patterning method using the same
KR101243821B1 (en) alignment system of shadow mask and substrate and method for alignment using the same
TWI429323B (en) Organic electroluminescent element

Legal Events

Date Code Title Description
A300 Application deemed to be withdrawn because no request for examination was validly filed

Free format text: JAPANESE INTERMEDIATE CODE: A300

Effective date: 20100601