JP2008211187A - 半導体パッケージ及びその製造方法 - Google Patents
半導体パッケージ及びその製造方法 Download PDFInfo
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- JP2008211187A JP2008211187A JP2008011047A JP2008011047A JP2008211187A JP 2008211187 A JP2008211187 A JP 2008211187A JP 2008011047 A JP2008011047 A JP 2008011047A JP 2008011047 A JP2008011047 A JP 2008011047A JP 2008211187 A JP2008211187 A JP 2008211187A
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- thin film
- film structure
- multilayer thin
- semiconductor chip
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Abstract
【解決手段】複数の誘電体層及び少なくとも一つの再配線層116,134を含む多層薄膜構造物110と、該多層薄膜構造物の一面に配置されて前記再配線層と電気的に接続される半導体チップ130と、前記多層薄膜構造物の他の一面に形成されたソルダバンプ125を含む半導体パッケージ100を提供する。前記多層薄膜構造物は、半導体パッケージの基板として機能し、別途の基板なしで軽薄短小のBGAパッケージを具現化できる。
【選択図】図2
Description
112:接合層 113:下地金属層
114:電極パッド 115:第1誘電層
116:再配線層 117:第2誘電層
120:導電性バンプ 125:ソルダバンプ
130:半導体チップ 131:電極パッド
132:第1誘電層 133:下地金属層
134:再配線層 135:第2誘電層
140:モールディング部
Claims (25)
- 複数の誘電体層及び少なくとも一つの再配線層を含む多層薄膜構造物と、
前記多層薄膜構造物の一面に配置されて前記再配線層と電気的に接続される半導体チップと、
前記多層薄膜構造物の他の一面に形成されたソルダバンプとを含む半導体パッケージ。 - 前記半導体チップが、再配線層を含む請求項1に記載の半導体パッケージ。
- 前記半導体チップが、バンプによって前記多層薄膜構造物と電気的に接続される請求項1に記載の半導体パッケージ。
- 前記半導体チップが、ワイヤによって前記多層薄膜構造物と電気的に接続される請求項1に記載の半導体パッケージ。
- 前記多層薄膜構造物の一面において、前記半導体チップの側方に形成されたモールディング部を含む請求項1に記載の半導体パッケージ。
- 前記モールディング部が、前記半導体チップの上面の高さ以下に形成された請求項5に記載の半導体パッケージ。
- 前記半導体チップの上面に少なくとも一つの他の半導体チップが積層されている請求項1に記載の半導体パッケージ。
- 前記半導体チップがバンプによって前記多層薄膜構造物と電気的に接続され、前記他の半導体チップはワイヤによって前記多層薄膜構造物と電気的に接続される請求項7に記載の半導体パッケージ。
- 前記多層薄膜構造物が、薄膜受動素子を内蔵している請求項1に記載の半導体パッケージ。
- 前記薄膜受動素子が、キャパシター、インダクター、抵抗のうち、少なくとも一つを含む請求項9に記載の半導体パッケージ。
- 前記多層薄膜構造物の再配線層とソルダバンプとの間には、少なくとも一つの金属層が形成されている請求項1に記載の半導体パッケージ。
- 前記金属層が、電極パッドと下地金属層を含む請求項11に記載の半導体パッケージ。
- 接触向上層としての前記下地金属層が金(Au)を含む請求項12に記載の半導体パッケージ。
- 前記多層薄膜構造物が、再配線層と電気的に接続される他の再配線層を含む請求項1に記載の半導体パッケージ。
- 前記半導体チップが、ワイヤで前記他の再配線層と電気的に接続される請求項14に記載の半導体パッケージ。
- 前記半導体チップの上面に接触する放熱体をさらに含む請求項1に記載の半導体パッケージ。
- 複数の誘電体層及び少なくとも一つの再配線層を含む多層薄膜構造物と、該多層薄膜構造物の一面に配置されて前記再配線層と電気的に接続される半導体チップと、前記多層薄膜構造物の他の一面に形成されたソルダバンプとを含む複数の半導体パッケージが、前記ソルダバンプによって電気的に接続されて垂直方向に配置されている積層型半導体パッケージ。
- 複数の誘電体層及び少なくとも一つの再配線層を含む多層薄膜構造物を形成する工程と、
前記多層薄膜構造物の一面に半導体チップを整列させて該半導体チップを前記再配線層と電気的に接続させる工程と、
前記多層薄膜構造物の他の一面にソルダバンプを形成する工程とを含む半導体パッケージの製造方法。 - 前記多層薄膜構造物が、ウエハーレベルまたはキャリアレベルで形成される請求項18に記載の半導体パッケージの製造方法。
- 前記半導体チップをウエハーレベルで形成する工程と、
ウエハーレベルで前記半導体チップをテストする工程と、
ウエハーレベルの前記半導体チップを個別に分離する工程とを含む請求項18に記載の半導体パッケージの製造方法。 - ウエハーレベルで前記半導体チップを形成した後、ウエハーの後面を薄型化する工程をさらに含む請求項20に記載の半導体パッケージの製造方法。
- 前記多層薄膜構造物は、ウエハーまたはキャリア上に接着層を形成する工程と、
前記接着層上に下地金属層を形成する工程と、
前記下地金属層上に局部的に電極パッドを形成する工程と、
前記電極パッドを露出させるように前記下地金属層上に第1誘電層を形成する工程と、
前記電極パッドと電気的に接続する再配線層を形成する工程と、
前記再配線層が局部的に露出するように第2誘電層を形成する工程を含む請求項18に記載の半導体パッケージの製造方法。 - 前記多層薄膜構造物に前記半導体チップを電気的に接続した後、ウエハーまたはキャリアを前記多層薄膜構造物から除去する工程を含む請求項22に記載の半導体パッケージの製造方法。
- 前記多層薄膜構造物の一面にモールディング部を形成する工程を含む請求項18に記載の半導体パッケージの製造方法。
- 前記多層薄膜構造物と前記半導体チップが接続されたパッケージを、ウエハーレベルまたはキャリアレベルで個別のパッケージに分離する工程を含む請求項18に記載の半導体パッケージの製造方法。
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US20080203583A1 (en) | 2008-08-28 |
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US7952210B2 (en) | 2011-05-31 |
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