JP2008177471A - 基板の処理方法、塗布膜除去装置及び基板処理システム - Google Patents
基板の処理方法、塗布膜除去装置及び基板処理システム Download PDFInfo
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- 238000003672 processing method Methods 0.000 title claims description 9
- 238000000576 coating method Methods 0.000 claims abstract description 251
- 239000011248 coating agent Substances 0.000 claims abstract description 250
- 238000000206 photolithography Methods 0.000 claims abstract description 24
- 238000005530 etching Methods 0.000 claims abstract description 17
- 238000012545 processing Methods 0.000 claims description 136
- 239000007788 liquid Substances 0.000 claims description 112
- 238000000034 method Methods 0.000 claims description 107
- 238000012546 transfer Methods 0.000 claims description 102
- 230000008569 process Effects 0.000 claims description 98
- 230000007246 mechanism Effects 0.000 claims description 78
- 238000004140 cleaning Methods 0.000 claims description 23
- 230000032258 transport Effects 0.000 claims description 9
- 230000003028 elevating effect Effects 0.000 claims description 8
- 230000007723 transport mechanism Effects 0.000 claims description 7
- 238000010894 electron beam technology Methods 0.000 claims description 6
- 235000012431 wafers Nutrition 0.000 description 346
- 239000010408 film Substances 0.000 description 171
- 238000010438 heat treatment Methods 0.000 description 18
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- 230000002093 peripheral effect Effects 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 9
- 239000011261 inert gas Substances 0.000 description 7
- 238000011161 development Methods 0.000 description 6
- 238000004380 ashing Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000000059 patterning Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
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- 238000005192 partition Methods 0.000 description 2
- 238000006555 catalytic reaction Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000005453 ketone based solvent Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 1
- 238000005201 scrubbing Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/80—Etching
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- G—PHYSICS
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
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- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
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- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
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- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
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- H01L21/68707—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance
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Abstract
【解決手段】ウェハWのフォトリソグラフィー処理中では、ウェハWの裏面の塗布膜の除去(ステップS6)が行われた直後に露光処理(ステップS7)が行われ、その露光処理の直後にウェハWの裏面に塗布膜が形成される(ステップS8)。その後、エッチング処理等(ステップS9〜S11)が行われ、これら一連の処理工程(ステップS6〜S11)が所定の回数繰り返し行われる。エッチング処理の際にはウェハWの裏面に塗布膜が形成されているので、塗布膜に微小な傷がつくことがあっても、ウェハWの裏面自体は塗布膜に保護されて傷がつくことがない。さらに露光処理の直前にウェハWの裏面の塗布膜が除去されるので、露光処理の際にはウェハWの裏面を平坦にしておくことができる。
【選択図】図12
Description
On Glass)膜である場合、除去液にはフッ酸等の薬液が用いられる。また例えば塗布膜が有機系材料のレジスト膜である場合、除去液にはPGMEA(ペグミア)等、あるいはアセトン系、ケトン系の溶剤が用いられる。
On Glass)材料、あるいは有機系材料のレジスト等が用いられる。
Vapor Deposition)法によって、ウェハWの裏面に薄膜を形成してもよい。すなわち、ウェハWの裏面に原料ガスを供給し、化学触媒反応によってウェハWの裏面に薄膜を堆積させることで、ウェハWの裏面を薄膜で保護してもよい。
本発明はこの例に限らず種々の態様を採りうるものである。本発明は、基板がウェハ以外のFPD(フラットパネルディスプレイ)、フォトマスク用のマスクレチクルなどの他の基板である場合にも適用できる。
200 塗布膜除去装置
220 スピンチャック
221 回転機構
230 除去液供給ノズル
250 処理容器
260 搬送アーム
263 回動機構
265 搬送機構
270 リンスノズル
300 塗布膜形成装置
500 塗布膜除去システム
600 塗布膜形成システム
W ウェハ
Claims (12)
- 少なくとも基板に対してフォトリソグラフィー処理とエッチング処理をこの順で複数回行う基板の処理方法であって、
前記フォトリソグラフィー処理における露光処理を行った後に、基板の裏面に塗布膜を形成する工程と、
前記塗布膜を形成してから、次の露光処理を行うまでの間に、前記塗布膜を除去する工程と、を有することを特徴とする、基板の処理方法。 - 前記塗布膜を形成する工程は、
基板を反転して、当該基板の裏面を上側に向ける工程と、
前記基板の裏面に塗布液を塗布する工程と、
前記基板の裏面に塗布された塗布液を硬化させる工程と、を有することを特徴とする、請求項1に記載の基板の処理方法。 - 前記塗布膜を除去する工程は、
前記塗布膜に除去液を供給する工程を有することを特徴とする、請求項1又は2に記載の基板の処理方法。 - 前記塗布膜を除去する工程は、
前記塗布膜に除去液を供給する前に、基板を反転して、当該基板の裏面を上側に向ける工程を有することを特徴とする、請求項1〜3のいずれかに記載の基板の処理方法。 - 前記塗布膜を形成する工程の直前に、基板の裏面を洗浄する工程を有することを特徴とする、請求項1〜4のいずれかに記載の基板の処理方法。
- 前記基板の裏面に塗布された塗布液は、加熱されて硬化することを特徴とする、請求項1〜5のいずれかに記載の基板の処理方法。
- 前記基板の裏面に塗布された塗布液は、紫外線または電子線が照射されて硬化することを特徴とする、請求項1〜5のいずれかに記載の基板の処理方法。
- 基板の裏面に形成された塗布膜を除去する塗布膜除去装置であって、
基板を搬送する搬送アームと、
前記搬送アームを支持し、前記搬送アームを水平軸周りに回動させる回動機構と、
前記回動機構を支持し、前記回動機構を昇降させる昇降機構と、
前記昇降機構を支持し、前記昇降機構を水平方向に搬送する搬送機構と、
基板の裏面を上側に向けて当該基板を水平に保持する基板保持部と、
前記基板保持部に保持された基板の裏面に塗布膜の除去液を供給する除去液供給ノズルと、
を有することを特徴とする、塗布膜除去装置。 - 前記基板保持部の下方には、当該基板保持部を鉛直軸周りに回転させる回転機構が設けられていることを特徴とする、請求項8に記載の塗布膜除去装置。
- 前記塗布ノズルは、基板の幅方向に延びるスリット状の吐出口を有するノズルであることを特徴とする、請求項8又は9に記載の塗布膜除去装置。
- 請求項8〜10のいずれかに記載の塗布膜除去装置と、基板に露光処理を行う露光処理装置と、を有することを特徴とする、基板処理システム。
- 基板の裏面に塗布膜を形成する塗布膜形成装置をさらに有することを特徴とする、請求項11に記載の基板処理システム。
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JP2007011262A JP5014811B2 (ja) | 2007-01-22 | 2007-01-22 | 基板の処理方法 |
US12/015,029 US20080176002A1 (en) | 2007-01-22 | 2008-01-16 | Substrate treatment method, coating film removing apparatus, and substrate treatment system |
US13/161,185 US8366872B2 (en) | 2007-01-22 | 2011-06-15 | Substrate treatment method, coating film removing apparatus, and substrate treatment system |
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011187519A (ja) * | 2010-03-05 | 2011-09-22 | Disco Corp | ウエーハ洗浄装置のチャックテーブル |
KR20140023212A (ko) * | 2012-08-17 | 2014-02-26 | 다이니폰 스크린 세이조우 가부시키가이샤 | 기판 처리 장치 및 기판 처리 방법 |
JP2014107313A (ja) * | 2012-11-26 | 2014-06-09 | Tokyo Electron Ltd | 基板洗浄方法および基板洗浄システム |
JP2014159020A (ja) * | 2013-02-20 | 2014-09-04 | Disco Abrasive Syst Ltd | 洗浄装置および洗浄装置を備えた加工装置 |
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US20110240597A1 (en) | 2011-10-06 |
US20080176002A1 (en) | 2008-07-24 |
US8366872B2 (en) | 2013-02-05 |
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