JP2008169482A - スパッタリングターゲット装置 - Google Patents
スパッタリングターゲット装置 Download PDFInfo
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- JP2008169482A JP2008169482A JP2008000679A JP2008000679A JP2008169482A JP 2008169482 A JP2008169482 A JP 2008169482A JP 2008000679 A JP2008000679 A JP 2008000679A JP 2008000679 A JP2008000679 A JP 2008000679A JP 2008169482 A JP2008169482 A JP 2008169482A
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- JP
- Japan
- Prior art keywords
- target material
- reinforcing
- target
- backing plate
- sputtering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
【解決手段】中央表面及び中央表面の両側に所定の段差だけ低く形成される少なくとも1つの段差表面を含むバッキングプレート110と、バッキングプレート110の中央表面に装着される基準ターゲット材120と、バッキングプレート110の段差表面に装着される補強ターゲット材130とを備える。
【選択図】図3
Description
112:中央表面
114:段差表面
120:基準ターゲット材
130:補強ターゲット材
132:中間ターゲット材
Claims (8)
- 大面積の対象物の幅方向に沿って主方向が定義されるスパッタリングターゲット装置であって、
前記主方向の中央表面及び前記中央表面の両側に所定の段差だけ低く形成される少なくとも1つの段差表面を含むバッキングプレートと、
前記バッキングプレートの中央表面に装着される基準ターゲット材と、
前記バッキングプレートの段差表面に装着される補強ターゲット材と、
を備えることを特徴とするスパッタリングターゲット装置。 - 前記基準ターゲット材及び前記補強ターゲット材は、同一の材質で形成され、前記バッキングプレートの中央を中心として左右対称を成して装着されることを特徴とする請求項1に記載のスパッタリングターゲット装置。
- 前記基準ターゲット材及び前記補強ターゲット材は、同一の材質で形成され、それぞれの幅Wnが少なくとも5mmであることを特徴とする請求項1に記載のスパッタリングターゲット装置。
- 前記基準ターゲット材及び前記補強ターゲット材の露出する表面は、実質的に同一の平面を形成することを特徴とする請求項1に記載のスパッタリングターゲット装置。
- 前記基準ターゲット材及び前記補強ターゲット材の露出する表面のうち、互いに隣り合う表面間の段差は、1mm以内を維持することを特徴とする請求項4に記載のスパッタリングターゲット装置。
- 前記バッキングプレートの前記中央表面の両側から複数の段差表面が提供されており、前記段差表面は、互いに異なる高さで形成されることを特徴とする請求項1に記載のスパッタリングターゲット装置。
- 大面積の対象物の幅方向に沿って主方向が定義されるスパッタリングターゲット装置において、
前記主方向の中央表面と、前記中央表面の両側で前記中央表面よりも低く形成される第1段差表面と、前記第1段差表面の両端で前記第1段差表面よりも低く形成される第2段差表面とを含むバッキングプレートと、
前記中央表面に装着される基準ターゲット材と、
前記第1段差表面に装着される第1補強ターゲット材と、
前記第2段差表面に装着される第2補強ターゲット材と、
を備えており、
前記基準ターゲット材、前記第1及び第2補強ターゲット材が露出する表面は、実質的に同一の平面を形成することを特徴とするスパッタリングターゲット装置。 - 前記第1及び第2補強ターゲット材が露出する表面間の段差は、1mm以内を維持することを特徴とする請求項7に記載のスパッタリングターゲット装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020070001464A KR101171769B1 (ko) | 2007-01-05 | 2007-01-05 | 스퍼터링용 타겟 장치 |
KR10-2007-0001464 | 2007-01-05 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008169482A true JP2008169482A (ja) | 2008-07-24 |
JP5334032B2 JP5334032B2 (ja) | 2013-11-06 |
Family
ID=39630526
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008000679A Active JP5334032B2 (ja) | 2007-01-05 | 2008-01-07 | スパッタリングターゲット装置 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP5334032B2 (ja) |
KR (1) | KR101171769B1 (ja) |
CN (1) | CN101220460B (ja) |
TW (1) | TWI418645B (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20130126343A1 (en) * | 2011-11-21 | 2013-05-23 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | Sputter target structure of transparent conductive layer |
AT14346U1 (de) * | 2014-07-08 | 2015-09-15 | Plansee Se | Target und Verfahren zur Herstellung eines Targets |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102251221B (zh) * | 2010-05-17 | 2013-02-27 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 一种靶材及应用该靶材的半导体器件加工设备 |
TWI544099B (zh) | 2010-05-21 | 2016-08-01 | 烏明克公司 | 濺鍍標靶對支撐材料的非連續性接合 |
WO2012066810A1 (ja) * | 2010-11-19 | 2012-05-24 | Jx日鉱日石金属株式会社 | Itoスパッタリングターゲット |
CN202322993U (zh) * | 2011-11-21 | 2012-07-11 | 深圳市华星光电技术有限公司 | 透明导电层的溅射靶材构造 |
KR20160123463A (ko) | 2015-04-15 | 2016-10-26 | (주)태광테크 | 스퍼터링용 타겟 및 그 제조 방법 |
JP6291122B1 (ja) * | 2017-03-29 | 2018-03-14 | 住友化学株式会社 | スパッタリングターゲット |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03287763A (ja) * | 1990-04-04 | 1991-12-18 | Sumitomo Metal Ind Ltd | マグネトロン・スパッタリング用ターゲット |
JPH0953174A (ja) * | 1995-08-18 | 1997-02-25 | Chodendo Hatsuden Kanren Kiki Zairyo Gijutsu Kenkyu Kumiai | スパッタリングターゲット |
JP2000204468A (ja) * | 1999-01-08 | 2000-07-25 | Tosoh Corp | 多分割スパッタリングタ―ゲット |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN2104222U (zh) * | 1991-07-04 | 1992-05-13 | 北京钢铁学院分院 | 冷阴极弧光离子镀台阶型靶 |
JP2006233243A (ja) * | 2005-02-22 | 2006-09-07 | Shin Meiwa Ind Co Ltd | 成膜装置用ターゲットの支持構造 |
CN2828061Y (zh) * | 2005-07-15 | 2006-10-18 | 中国人民解放军国防科学技术大学 | 一种磁控溅射铁磁材料的靶材结构 |
-
2007
- 2007-01-05 KR KR1020070001464A patent/KR101171769B1/ko not_active IP Right Cessation
-
2008
- 2008-01-04 TW TW097100417A patent/TWI418645B/zh not_active IP Right Cessation
- 2008-01-04 CN CN2008100000468A patent/CN101220460B/zh not_active Expired - Fee Related
- 2008-01-07 JP JP2008000679A patent/JP5334032B2/ja active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03287763A (ja) * | 1990-04-04 | 1991-12-18 | Sumitomo Metal Ind Ltd | マグネトロン・スパッタリング用ターゲット |
JPH0953174A (ja) * | 1995-08-18 | 1997-02-25 | Chodendo Hatsuden Kanren Kiki Zairyo Gijutsu Kenkyu Kumiai | スパッタリングターゲット |
JP2000204468A (ja) * | 1999-01-08 | 2000-07-25 | Tosoh Corp | 多分割スパッタリングタ―ゲット |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20130126343A1 (en) * | 2011-11-21 | 2013-05-23 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | Sputter target structure of transparent conductive layer |
AT14346U1 (de) * | 2014-07-08 | 2015-09-15 | Plansee Se | Target und Verfahren zur Herstellung eines Targets |
US11101116B2 (en) | 2014-07-08 | 2021-08-24 | Plansee Se | Target and process for producing a target |
Also Published As
Publication number | Publication date |
---|---|
CN101220460A (zh) | 2008-07-16 |
KR101171769B1 (ko) | 2012-08-07 |
JP5334032B2 (ja) | 2013-11-06 |
TWI418645B (zh) | 2013-12-11 |
KR20080064489A (ko) | 2008-07-09 |
CN101220460B (zh) | 2012-03-21 |
TW200833857A (en) | 2008-08-16 |
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