JP2008159783A - 半導体装置および半導体装置の製造方法 - Google Patents
半導体装置および半導体装置の製造方法 Download PDFInfo
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- JP2008159783A JP2008159783A JP2006346107A JP2006346107A JP2008159783A JP 2008159783 A JP2008159783 A JP 2008159783A JP 2006346107 A JP2006346107 A JP 2006346107A JP 2006346107 A JP2006346107 A JP 2006346107A JP 2008159783 A JP2008159783 A JP 2008159783A
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Abstract
【解決手段】
本発明に係る半導体装置は、ドリフト領域2と異なるバンドキャップ幅を有する多結晶シリコンから成り、ドリフト領域2とヘテロ接合するヘテロ半導体領域3および9と、ドリフト領域2とヘテロ半導体領域3および9とのヘテロ接合部に接するゲート絶縁膜4と、ゲート絶縁膜4に接するゲート電極5と、ヘテロ半導体領域3および9のソースコンタクト部と接続されたソース電極6と、基板領域1と接続されたドレイン電極7とを含む最外部スイッチ構造および繰り返し部スイッチ構造が配置されている。更に、最外部スイッチ構造は、導通状態の場合、最外部スイッチ構造を流れる電流が、繰り返し部スイッチ構造を流れる電流より小さくなる機構を備えている。
【選択図】図1
Description
第1の実施形態に係る半導体装置について図1乃至図6を参照して説明する。図1は本発明の第1の実施形態に係る半導体装置の断面図、図2は図1に示す半導体装置が形成された半導体チップ100を示す図である。図2に示すように、第1の実施形態に係る半導体装置は、所定の大きさの半導体チップ100のA−A’部分に形成されている。また、図1に示すように、第1の実施形態に係る半導体装置は、活性領域部分と、当該活性領域部分の外周に形成された耐圧構造からなる。当該活性領域部分は、当該活性領域部分の最も外側にあたる最外部に形成され、上記耐圧構造と接する第1のスイッチ構造である最外部スイッチ構造と、半導体チップ100の中心から最外部スイッチ構造に向けて、第2のスイッチ構造である基本セルが複数繰り返し形成される繰り返し部スイッチ構造から形成されている。図1に示した第1の実施形態に係る半導体装置では、上記基本セルが3つ形成されている。
次に、第2の実施形態に係る半導体装置について、第1の実施形態に係る半導体装置と異なる点を中心に図7乃至図10を参照して説明する。また、第2の実施形態に係る半導体装置について、第1の実施形態に係る半導体装置と同様の構造には同じ番号を付し、説明を省略する。
次に、第3の実施形態に係る半導体装置について、第1の実施形態に係る半導体装置と異なる点を中心に図11乃至図14を参照して説明する。また、第3の実施形態に係る半導体装置について、第1の実施形態に係る半導体装置と同様の構造には同じ番号を付し、説明を省略する。
5 ゲート電極、6 ソース電極、7 ドレイン電極、8 層間絶縁膜、
9 最外周ヘテロ半導体領域、10 電界緩和領域、
11 最外周電界緩和領域、12 マスク材、13 不純物導入領域、
14 マスク材、15 不純物導入領域、16 マスク材、17 マスク材、
18 マスク材、19 多結晶シリコン層、100 半導体チップ
a 最外周ヘテロ半導体領域端部の傾斜角、
b ヘテロ半導体領域端部の傾斜角
Claims (11)
- 半導体基体と、
前記半導体基体と異なるバンドキャップ幅を有する半導体材料から成り、前記半導体基体とヘテロ接合するヘテロ半導体領域と、
前記半導体基体と前記ヘテロ半導体領域とのヘテロ接合部に接するように形成されたゲート絶縁膜と、
前記ゲート絶縁膜に接して形成されたゲート電極と、
前記ヘテロ半導体領域のソースコンタクト部と接続されたソース電極と、
前記半導体基体と接続されたドレイン電極とを含む第1および第2のスイッチ構造が配置された半導体装置において、
前記半導体装置の最外部に配置された前記第1のスイッチ構造は、導通状態の場合、前記第1のスイッチ構造を流れる電流が、前記最外部以外に配置された前記第2のスイッチ構造を流れる電流より小さくなる機構を備えていることを特徴とする半導体装置。 - 前記第1のスイッチ構造は、前記第2のスイッチ構造を構成する前記ヘテロ接合部のヘテロ障壁高さより高いヘテロ障壁高さを有する前記ヘテロ接合部を備えることを特徴とする請求項1に記載の半導体装置。
- 前記第1のスイッチ構造は、前記へテロ接合部の内、前記ゲート絶縁膜と接する部分であるヘテロ接合駆動端部から前記ソースコンタクト部までの抵抗が、前記第2のスイッチ構造を構成する前記ヘテロ半導体領域の前記ソースコンタクト部から前記ヘテロ接合駆動端部までの抵抗より大きいことを特徴とする請求項1または2に記載の半導体装置。
- 前記第1のスイッチ構造の前記ヘテロ接合駆動端部のゲート電界強度が、前記第2のスイッチ構造の前記ヘテロ接合駆動端部のゲート電界強度より小さいことを特徴とする請求項1乃至3のいずれかに記載の半導体装置。
- 前記第1のスイッチ構造の前記ヘテロ接合駆動端部のドレイン電界強度が、前記第2のスイッチ構造の前記ヘテロ接合駆動端部のドレイン電界強度より小さいことを特徴とする請求項1乃至4のいずれかに記載の半導体装置。
- 前記第1のスイッチ構造を構成する前記ヘテロ半導体領域の不純物密度が、前記第2のスイッチ構造を構成する前記ヘテロ半導体領域の不純物密度より小さいことを特徴とする請求項1乃至5のいずれかに記載の半導体装置。
- 前記第1のスイッチ構造の前記ヘテロ接合駆動端部に接し、かつ、前記第2のスイッチ構造の前記ヘテロ接合駆動端部には接しない電界緩和領域を有することを特徴とする請求項1乃至6のいずれかに記載の半導体装置。
- 前記第1のスイッチ構造の前記ヘテロ接合駆動端部の傾斜角が、前記第2のスイッチ構造の前記ヘテロ接合駆動端部の傾斜角よりも大きいことを特徴とする請求項1乃至7のいずれかに記載の半導体装置。
- 前記半導体基体が炭化珪素、ダイヤモンド、窒化ガリウムからなることを特徴とする請求項1乃至8のいずれかに記載の半導体装置。
- 前記ヘテロ半導体領域が単結晶シリコン、多結晶シリコンもしくはアモルファスシリコンからなることを特徴とする請求項1乃至9のいずれかに記載の半導体装置。
- 請求項1に記載の半導体装置の製造方法において、
前記半導体基体上にヘテロ半導体層を形成し、
前記ヘテロ半導体層の前記第1、第2のスイッチ構造が形成される部分にそれぞれ第1、第2の不純物導入領域を形成し、
前記ヘテロ半導体層をエッチングした後に熱処理を行うことにより前記ヘテロ半導体領域を形成することを特徴とする半導体装置の製造方法。
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JP2002528916A (ja) * | 1998-10-26 | 2002-09-03 | ノース・キャロライナ・ステイト・ユニヴァーシティ | 改良された高周波スイッチング特性と降伏特性を備えたパワー半導体デバイス |
JP2005303025A (ja) * | 2004-04-13 | 2005-10-27 | Nissan Motor Co Ltd | 半導体装置 |
JP2006100365A (ja) * | 2004-09-28 | 2006-04-13 | Nissan Motor Co Ltd | 半導体装置 |
JP2006210693A (ja) * | 2005-01-28 | 2006-08-10 | Nissan Motor Co Ltd | 半導体装置及び半導体装置の製造方法 |
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JP2005303025A (ja) * | 2004-04-13 | 2005-10-27 | Nissan Motor Co Ltd | 半導体装置 |
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CN101207123B (zh) | 2010-06-02 |
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