JP2008147632A5 - - Google Patents
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- JP2008147632A5 JP2008147632A5 JP2007290164A JP2007290164A JP2008147632A5 JP 2008147632 A5 JP2008147632 A5 JP 2008147632A5 JP 2007290164 A JP2007290164 A JP 2007290164A JP 2007290164 A JP2007290164 A JP 2007290164A JP 2008147632 A5 JP2008147632 A5 JP 2008147632A5
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- 238000000034 method Methods 0.000 claims description 27
- 239000000758 substrate Substances 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 15
- 238000010438 heat treatment Methods 0.000 claims description 14
- 239000011344 liquid material Substances 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 8
- 239000013078 crystal Substances 0.000 claims description 6
- 238000001035 drying Methods 0.000 claims description 6
- 238000003860 storage Methods 0.000 claims description 6
- 238000007493 shaping process Methods 0.000 claims description 5
- 238000001816 cooling Methods 0.000 claims description 4
- 230000005684 electric field Effects 0.000 claims description 2
- 230000009477 glass transition Effects 0.000 claims description 2
- BQCIDUSAKPWEOX-UHFFFAOYSA-N 1,1-Difluoroethene Chemical compound FC(F)=C BQCIDUSAKPWEOX-UHFFFAOYSA-N 0.000 claims 2
- MIZLGWKEZAPEFJ-UHFFFAOYSA-N 1,1,2-trifluoroethene Chemical group FC=C(F)F MIZLGWKEZAPEFJ-UHFFFAOYSA-N 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 229920001577 copolymer Polymers 0.000 claims 1
- 229920000642 polymer Polymers 0.000 claims 1
- 238000003825 pressing Methods 0.000 claims 1
- 239000002904 solvent Substances 0.000 claims 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
Description
このような目的は、下記の本発明により達成される。
本発明に係るひとつの有機強誘電体膜の形成方法は、基板に、低結晶化度膜を形成する第１の工程と、前記低結晶化度膜から有機強誘電体膜を形成する第２の工程と、を有し、前記低結晶化度膜の結晶化度は、前記有機強誘電体膜の結晶化度よりも低く、前記第１の工程は、前記基板に有機強誘電体材料を含む液体材料を塗布・乾燥する工程を含み、前記第２の工程は、前記低結晶化度膜を加熱・加圧する第３の工程を含むことを特徴とする。
前記低結晶化度膜における結晶化度は、前記有機強誘電体膜の結晶化度の８０％以下であることが好ましい。
前記第３の工程において、前記加熱・加圧における加圧の圧力が、０．１〜１０ＭＰａ／ｃｍ ２ であることが好ましい。
前記第３の工程において、前記加熱・加圧における加熱の温度が、８０℃〜２００℃であることが好ましい。
更に、前記第２の工程は、前記第３の工程の後、加圧状態を維持したまま冷却を行う第４の工程を含むことが好ましい。
前記第４の工程において、前記冷却の温度は、前記有機強誘電体材料のガラス転移点以下の温度であることが好ましい。
前記第２の工程において、前記第３の工程の前に、前記低結晶化度膜を加熱する工程を有することが好ましい。
前記第３の工程における前記加圧及び前記第４の工程における前記加圧状態の維持には、前記有機強誘電体膜の有効領域を規定し得る型が用いられ、前記低結晶化度膜が前記型により整形されることが好ましい。
前記基板における前記液体材料が塗布された面は導電性を有する部分が形成されており、前記型は導電性を有し、前記第３の工程若しくは前記第４の工程が、前記導電性を有する面と前記型との間に電界を印加しつつ行われることが好ましい。
本発明に係るひとつの有機強誘電体膜の形成方法は、基板の一方の面側に、前記有機強誘電体膜の結晶化度よりも低い結晶化度の低結晶化度膜を形成する第１の工程と、前記低結晶化度膜から前記有機強誘電体膜を形成する第２の工程と、を有し、前記第１の工程は、前記基板の一方の面側に前記有機強誘電体材料を含む液体材料を塗布・乾燥する工程を含み、前記第２の工程は、前記低結晶化度膜を加熱して前記低結晶化度膜の結晶化度を高めた結晶膜を形成する第３の工程と、前記結晶膜を加熱・加圧することにより前記結晶膜を整形し前記有機強誘電体膜を形成する第４の工程とを含む、ことを特徴とする。
本発明に係るひとつの有機強誘電体膜を用いた記憶素子の製造方法は、基板の一方の面側に、一対の第１の電極を形成する工程と、前記一対の第１の電極の前記基板とは反対側の面上に前記有機強誘電体膜の結晶化度よりも低い結晶化度の低結晶化度膜を形成する第１の工程と、前記低結晶化度膜から前記有機強誘電体膜を形成する第２の工程と、前記有機強誘電体膜の前記一対の第１の電極とは反対側の面上に、第２の電極を形成する工程と、を含み、前記第１の工程は、前記基板の一方の面側に前記有機強誘電体材料を含む液体材料を塗布・乾燥する工程を含み、前記第２の工程は、前記低結晶化度膜を加熱・加圧することにより、前記低結晶化度膜を整形しつつ前記低結晶化度膜中の結晶化度を高める工程を含む、ことを特徴とする。
上記ひとつの有機強誘電体膜を用いた記憶素子の製造方法において、更に前記一対の第１の電極を形成する工程の後、かつ、前記第１の工程の前に、半導体膜を形成する工程を含み、前記半導体膜を形成する工程において、前記１対の第１の電極のそれぞれに接触するように前記半導体膜を形成し、前記第１の工程において形成される前記低結晶化度膜は、前記半導体膜の前記基板とは反対側の面上に形成されることが好ましい。
また、本発明に係るひとつの記憶装置は、上記ひとつの有機強誘電体膜を用いた記憶素子の製造方法で製造された記憶素子を備えることが好ましい。
また、本発明に係るひとつの電子機器は、上記のひとつの記憶装置を備えることが好ましい。
本発明に係るひとつの有機強誘電体膜の形成方法は、結晶性を有する有機強誘電体材料を主材料として構成された有機強誘電体膜の形成方法であって、基板の一方面上に、前記有機強誘電体膜の結晶化度よりも低い結晶化度の低結晶化度膜を形成する第１の工程と、
前記低結晶化度膜から前記有機強誘電体膜を形成する第２の工程と、を有し、前記第１の工程は、前記基板の一方面上に前記有機強誘電体材料を含む液体材料を塗布・乾燥する工程を含み、前記第２の工程は、前記低結晶化度膜を加熱・加圧することにより、前記低結晶化度膜を整形しつつ前記低結晶化度膜中の結晶化度を高める工程を含む、ことを特徴とする。
また、本発明において、前記低結晶化度膜における結晶化度は、前記有機強誘電体膜の結晶化度の８０％以下であることが好ましい。
Such an object is achieved by the present invention described below.
One method of forming an organic ferroelectric film according to the present invention includes a first step of forming a low crystallinity film on a substrate, and a second step of forming an organic ferroelectric film from the low crystallinity film. And wherein the crystallinity of the low crystallinity film is lower than the crystallinity of the organic ferroelectric film, and the first process comprises applying an organic ferroelectric material to the substrate. Including a step of applying and drying the liquid material, wherein the second step includes a third step of heating and pressurizing the low crystallinity film.
The crystallinity in the low crystallinity film is preferably 80% or less of the crystallinity of the organic ferroelectric film.
In the third step, it is preferable that the pressurization pressure in the heating / pressurization is 0.1 to 10 MPa / cm 2 .
In the third step, the heating temperature in the heating / pressurization is preferably 80 ° C to 200 ° C.
Furthermore, it is preferable that the second step includes a fourth step of performing cooling while maintaining the pressurized state after the third step.
In the fourth step, the cooling temperature is preferably equal to or lower than the glass transition point of the organic ferroelectric material.
The second step preferably includes a step of heating the low crystallinity film before the third step.
A mold capable of defining an effective area of the organic ferroelectric film is used for maintaining the pressurized state in the third step and the pressurized state in the fourth step, and the low crystallinity film is It is preferable to be shaped by the mold.
The surface of the substrate on which the liquid material is applied has a conductive portion, the mold has conductivity, and the third step or the fourth step has the conductivity. It is preferable to carry out the process while applying an electric field between the surface and the mold.
In one method of forming an organic ferroelectric film according to the present invention, a low crystallinity film having a crystallinity lower than the crystallinity of the organic ferroelectric film is formed on one surface side of the substrate. 1 and a second step of forming the organic ferroelectric film from the low crystallinity film, wherein the first step includes forming the organic ferroelectric on one surface side of the substrate. A step of applying and drying a liquid material including a body material, wherein the second step forms a crystal film in which the low crystallinity film is heated to increase the crystallinity of the low crystallinity film. The method includes a third step and a fourth step of forming the organic ferroelectric film by shaping the crystal film by heating and pressurizing the crystal film.
A method of manufacturing a memory element using one organic ferroelectric film according to the present invention includes a step of forming a pair of first electrodes on one surface side of a substrate, and the step of forming the pair of first electrodes. A first step of forming a low crystallinity film having a crystallinity lower than the crystallinity of the organic ferroelectric film on a surface opposite to the substrate; and from the low crystallinity film, A second step of forming a dielectric film, and a step of forming a second electrode on a surface of the organic ferroelectric film opposite to the pair of first electrodes, The first step includes a step of applying and drying a liquid material containing the organic ferroelectric material on one surface side of the substrate, and the second step heats and pressurizes the low crystallinity film. Thus, the method includes a step of increasing the crystallinity in the low crystallinity film while shaping the low crystallinity film.
In the method of manufacturing a memory element using the one organic ferroelectric film, a step of forming a semiconductor film after the step of forming the pair of first electrodes and before the first step In the step of forming the semiconductor film, the semiconductor film is formed in contact with each of the pair of first electrodes, and the low crystallinity film formed in the first step is The semiconductor film is preferably formed on a surface opposite to the substrate.
Moreover, it is preferable that one memory | storage device based on this invention is equipped with the memory element manufactured with the manufacturing method of the memory element using said one organic ferroelectric film.
One electronic device according to the present invention preferably includes the one storage device.
One method of forming an organic ferroelectric film according to the present invention is a method for forming an organic ferroelectric film composed mainly of an organic ferroelectric material having crystallinity, on one surface of a substrate. A first step of forming a low crystallinity film having a crystallinity lower than the crystallinity of the organic ferroelectric film;
Forming the organic ferroelectric film from the low crystallinity film, and the first process includes a liquid material containing the organic ferroelectric material on one surface of the substrate. And the second step includes crystallization in the low crystallinity film while shaping the low crystallinity film by heating and pressurizing the low crystallinity film. Including a step of increasing the degree.
In the present invention, the crystallinity of the low crystallinity film is preferably 80% or less of the crystallinity of the organic ferroelectric film.
Claims (18)
前記低結晶化度膜から有機強誘電体膜を形成する第２の工程と、を有し、
前記低結晶化度膜の結晶化度は、前記有機強誘電体膜の結晶化度よりも低く、
前記第１の工程は、前記基板に有機強誘電体材料を含む液体材料を塗布・乾燥する工程を含み、
前記第２の工程は、前記低結晶化度膜を加熱・加圧する第３の工程を含むことを特徴とする有機強誘電体膜の形成方法。 A first step of forming a low crystallinity film on a substrate ;
A second step of forming an organic ferroelectric film from the low crystallinity film,
The crystallinity of the low crystallinity film is lower than the crystallinity of the organic ferroelectric film,
Wherein the first step includes a step of applying and drying a liquid material containing an organic ferroelectric material on the substrate,
The method of forming an organic ferroelectric film, wherein the second step includes a third step of heating and pressurizing the low crystallinity film.
前記型は導電性を有し、
前記第３の工程若しくは前記第４の工程が、前記導電性を有する面と前記型との間に電界を印加しつつ行われることを特徴とする請求項１１または請求項１２に記載の有機強誘電体膜の形成方法。 The surface of the substrate on which the liquid material is applied has a conductive portion,
The mold has conductivity,
The organic strength according to claim 11 or 12, wherein the third step or the fourth step is performed while applying an electric field between the conductive surface and the mold. Dielectric film formation method.
基板の一方の面側に、前記有機強誘電体膜の結晶化度よりも低い結晶化度の低結晶化度膜を形成する第１の工程と、
前記低結晶化度膜から前記有機強誘電体膜を形成する第２の工程と、を有し、
前記第１の工程は、前記基板の一方の面側に前記有機強誘電体材料を含む液体材料を塗布・乾燥する工程を含み、
前記第２の工程は、
前記低結晶化度膜を加熱して前記低結晶化度膜の結晶化度を高めた結晶膜を形成する第３の工程と、
前記結晶膜を加熱・加圧することにより前記結晶膜を整形し前記有機強誘電体膜を形成する第４の工程とを含む、ことを特徴とする有機強誘電体膜の形成方法。 A method for producing an organic ferroelectric film comprising an organic ferroelectric material having crystallinity as a main material,
A first step of forming a low crystallinity film having a crystallinity lower than the crystallinity of the organic ferroelectric film on one surface side of the substrate ;
A second step of forming the organic ferroelectric film from the low crystallinity film,
The first step includes a step of applying and drying a liquid material containing the organic ferroelectric material on one surface side of the substrate ,
The second step includes
A third step of forming a crystal film in which the low crystallinity film is heated to increase the crystallinity of the low crystallinity film;
And a fourth step of forming the organic ferroelectric film by shaping the crystal film by heating and pressurizing the crystal film, and forming the organic ferroelectric film.
基板の一方の面側に、一対の第１の電極を形成する工程と、
前記一対の第１の電極の前記基板とは反対側の面上に前記有機強誘電体膜の結晶化度よりも低い結晶化度の低結晶化度膜を形成する第１の工程と、
前記低結晶化度膜から前記有機強誘電体膜を形成する第２の工程と、
前記有機強誘電体膜の前記一対の第１の電極とは反対側の面上に、第２の電極を形成する工程と、を含み、
前記第１の工程は、前記基板の一方の面側に前記有機強誘電体材料を含む液体材料を塗布・乾燥する工程を含み、
前記第２の工程は、前記低結晶化度膜を加熱・加圧することにより、前記低結晶化度膜を整形しつつ前記低結晶化度膜中の結晶化度を高める工程を含む、
ことを特徴とする記憶素子の製造方法。 A method of manufacturing a memory element using an organic ferroelectric film composed mainly of an organic ferroelectric material having crystallinity,
Forming a pair of first electrodes on one surface side of the substrate ;
Forming a low crystallinity film having a crystallinity lower than the crystallinity of the organic ferroelectric film on a surface of the pair of first electrodes opposite to the substrate;
A second step of forming the organic ferroelectric film from the low crystallinity film;
Forming a second electrode on a surface opposite to the pair of first electrodes of the organic ferroelectric film,
The first step includes a step of applying and drying a liquid material containing the organic ferroelectric material on one surface side of the substrate ,
The second step includes a step of increasing the crystallinity in the low crystallinity film while shaping the low crystallinity film by heating and pressurizing the low crystallinity film.
A method for manufacturing a memory element.
前記半導体膜を形成する工程において、前記１対の第１の電極のそれぞれに接触するように前記半導体膜を形成し、
前記第１の工程において形成される前記低結晶化度膜は、前記半導体膜の前記基板とは反対側の面上に形成されることを特徴とする請求項１５に記載の記憶素子の製造方法。 Furthermore, after the step of forming the pair of first electrodes and before the first step, a step of forming a semiconductor film,
In the step of forming the semiconductor film, the semiconductor film is formed so as to be in contact with each of the pair of first electrodes,
16. The method for manufacturing a memory element according to claim 15, wherein the low crystallinity film formed in the first step is formed on a surface of the semiconductor film opposite to the substrate. .
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007290164A JP2008147632A (en) | 2006-11-13 | 2007-11-07 | Method for forming organic ferroelectric film, method for manufacturing memory element, memory device and electronic apparatus |
| US11/937,197 US20080135900A1 (en) | 2006-11-13 | 2007-11-08 | Method of forming organic ferroelectric film, method of manufacturing memory element, memory device, and electronic apparatus |
| KR1020070114744A KR20080043239A (en) | 2006-11-13 | 2007-11-12 | Method of forming organic ferroelectric film, method of manufacturing memory element, memory device, and electronic apparatus |
| US12/578,481 US20100022032A1 (en) | 2006-11-13 | 2009-10-13 | Method of forming organic ferroelectric film, method of manufacturing memory element, memory device, and electronic apparatus |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006307153 | 2006-11-13 | ||
| JP2007290164A JP2008147632A (en) | 2006-11-13 | 2007-11-07 | Method for forming organic ferroelectric film, method for manufacturing memory element, memory device and electronic apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2008147632A JP2008147632A (en) | 2008-06-26 |
| JP2008147632A5 true JP2008147632A5 (en) | 2010-11-18 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007290164A Withdrawn JP2008147632A (en) | 2006-11-13 | 2007-11-07 | Method for forming organic ferroelectric film, method for manufacturing memory element, memory device and electronic apparatus |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP2008147632A (en) |
| KR (1) | KR20080043239A (en) |
| CN (1) | CN101188198A (en) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5957648B2 (en) * | 2009-09-14 | 2016-07-27 | 株式会社イデアルスター | Mixed film of vinylidene fluoride, trifluoroethylene or tetrafluoroethylene copolymer and fullerene and method for producing the same |
| JP2011159848A (en) * | 2010-02-02 | 2011-08-18 | Toshiba Corp | Solid-state imaging device and method for manufacturing the same |
| KR101276560B1 (en) * | 2011-03-17 | 2013-06-24 | 한국과학기술원 | Ferroelectric Polymer Nanodot Arrays and Dewetting Process for Manufacturing the Same |
| JP5926903B2 (en) * | 2011-08-22 | 2016-05-25 | 株式会社クレハ | Method for producing a polymer having a desired Curie temperature |
| CN103999207B (en) * | 2011-11-09 | 2017-07-28 | 国立研究开发法人科学技术振兴机构 | Solid state electronic devices |
| EP2973775B1 (en) * | 2013-03-14 | 2017-06-07 | Saudi Basic Industries Corporation | Ferroelectric capacitor with improved fatigue and breakdown properties |
| JP6229532B2 (en) * | 2014-02-21 | 2017-11-15 | 国立研究開発法人産業技術総合研究所 | Method for producing organic ferroelectric thin film |
| JP2016171152A (en) * | 2015-03-12 | 2016-09-23 | ペクセル・テクノロジーズ株式会社 | Ferroelectric memory device arranged by use of perovskite compound and method for manufacturing the same |
-
2007
- 2007-11-07 JP JP2007290164A patent/JP2008147632A/en not_active Withdrawn
- 2007-11-12 KR KR1020070114744A patent/KR20080043239A/en not_active Application Discontinuation
- 2007-11-13 CN CNA2007101681560A patent/CN101188198A/en active Pending
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