JP2008147626A - 半導体装置の作製方法 - Google Patents
半導体装置の作製方法 Download PDFInfo
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- JP2008147626A JP2008147626A JP2007268621A JP2007268621A JP2008147626A JP 2008147626 A JP2008147626 A JP 2008147626A JP 2007268621 A JP2007268621 A JP 2007268621A JP 2007268621 A JP2007268621 A JP 2007268621A JP 2008147626 A JP2008147626 A JP 2008147626A
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
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Abstract
【解決手段】基板上に第1の層を形成し、第1の層上に剥離層を形成し、剥離層側から剥離層に選択的にレーザビームを照射して一部の剥離層の付着力を低減させる。次に、付着力が低減された剥離層を除去し、残存した剥離層をマスクとして第1の層を選択的にエッチングする。また、基板上に剥離層を形成し、少なくとも剥離層に選択的に第1のレーザビームを照射して一部の剥離層の付着力を低減させる。次に、付着力が低減された剥離層を除去する。次に、残存した剥離層上に第1の層を形成し、残存した剥離層に第2のレーザビームを照射して残存した剥離層の付着力を低減させ、残存した剥離層及び当該剥離層に接する第1の層を除去する。
【選択図】図1
Description
本実施の形態では、フォトリソグラフィー工程を経ずとも、レーザビームを用いて薄膜を加工するプロセスについて、以下に示す。図1は、基板上に選択的に任意の形状の層を形成する工程を示す断面図である。
本実施の形態では、実施の形態1とは異なる工程により、所望の形状を有する層の形成する工程を、図2を用いて説明する。本実施の形態では、実施の形態1と比較して、剥離層にレーザビームを照射する方向が異なる。
本実施の形態では、実施の形態1とは異なる工程により、所望の形状を有する層の形成する工程を、図3を用いて説明する。本実施の形態では、実施の形態1及び2と比較して、マスクとして機能する剥離層を形成する順序が異なる。
本実施の形態では、上記実施の形態1乃至3と比較して、剥離層及び第1の層の膜厚及び材料の選択幅を広げることが可能なプロセスについて図4を用いて説明する。なお、ここでは実施の形態1を用いて説明する。
本実施の形態では、上記実施の形態1乃至3と比較して、剥離層及び第1の層の膜厚及び材料の選択幅を広げることが可能なプロセスについて図5を用いて説明する。なお、ここでは実施の形態2を用いて説明する。
本実施の形態では、上記実施の形態1乃至3と比較して、剥離層及び第1の層の膜厚及び材料の選択幅を広げることが可能なプロセスについて図6を用いて説明する。なお、ここでは実施の形態3を用いて説明する。
ここでは水洗して付着力が低下した剥離層を除去する。
Claims (13)
- 基板上に第1の層を形成し、前記第1の層上に剥離層を形成し、
前記剥離層に選択的にレーザビームを照射して前記剥離層の付着力を低下させ、
前記レーザビームが照射された剥離層を除去して前記第1の層の一部を露出し、
前記露出された第1の層をエッチングして、第2の層を形成することを特徴とする半導体装置の作製方法。 - 請求項1において、前記レーザビームは少なくとも前記剥離層で吸収される波長を有し、前記レーザビームを前記剥離層の表面から前記剥離層に照射することを特徴とする半導体装置の作製方法。
- 基板上に第1の層を形成し、前記第1の層上に剥離層を形成し、前記剥離層上に透光性を有する層を形成し、
前記剥離層に選択的にレーザビームを照射して前記剥離層の付着力を低下させ、
前記レーザビームが照射された剥離層及び前記剥離層に接する透光性を有する層を除去して前記第1の層の一部を露出し、
前記露出された第1の層をエッチングして、第2の層を形成することを特徴とする半導体装置の作製方法。 - 請求項3において、前記レーザビームは少なくとも前記剥離層で吸収される波長を有し、前記レーザビームを前記透光性を有する層から前記剥離層に照射することを特徴とする半導体装置の作製方法。
- 請求項1または請求項3において、前記レーザビームは前記剥離層で吸収され、且つ前記基板及び前記第1の層を透過する波長を有し、前記レーザビームを前記基板から前記剥離層に照射することを特徴とする半導体装置の作製方法。
- 基板上に第1の剥離層を形成し、
前記第1の剥離層に選択的に第1のレーザビームを照射して前記第1の剥離層の付着力を低下させ、
前記第1のレーザビームが照射された第1の剥離層を除去して前記第2の剥離層を形成し、
前記第2の剥離層、及び基板上に第1の層を形成し、
前記第2の剥離層に第2のレーザビームを照射して前記第2の剥離層の付着力を低下させ、
前記第2のレーザビームが照射された第2の剥離層、及び前記第2の剥離層に接する第1の層を除去して第2の層を形成することを特徴とする半導体装置の作製方法。 - 請求項6において、前記第1のレーザビームは少なくとも前記第1の剥離層で吸収される波長を有し、前記第1のレーザビームを前記剥離層の表面から前記第1の剥離層に照射することを特徴とする半導体装置の作製方法。
- 請求項6において、前記第2のレーザビームは少なくとも前記第2の剥離層で吸収され、且つ前記第1の層を透過する波長を有し、前記第2のレーザビームを前記剥離層の表面から前記第2の剥離層に照射することを特徴とする半導体装置の作製方法。
- 基板上に第1の剥離層を形成し、前記第1の剥離層上に第1の透光性を有する層を形成し、
前記第1の剥離層に選択的に第1のレーザビームを照射して前記第1の剥離層の付着力を低下させ、
前記第1のレーザビームが照射された第1の剥離層及び前記の剥離層に接する第1の透光性を有する層を除去して前記第2の剥離層及び第2の透光性を有する層を形成し、
前記第2の剥離層、第2の透光性を有する層、及び基板上に第1の層を形成し、
前記第2の剥離層に第2のレーザビームを照射して前記第2の剥離層の付着力を低下させ、
前記第2のレーザビームが照射された第2の剥離層、及び前記第2の剥離層に接する第2の透光性を有する層、並びに前記第2の透光性を有する層に接する第1の層を除去して第2の層を形成することを特徴とする半導体装置の作製方法。 - 請求項9において、前記第1のレーザビームは少なくとも前記第1の剥離層で吸収される波長を有し、前記第1のレーザビームを前記第1の透光性を有する層の表面から前記第1の剥離層に照射することを特徴とする半導体装置の作製方法。
- 請求項9において、前記第2のレーザビームは少なくとも前記第2の剥離層で吸収され、且つ前記第1の層及び第2の透光性を有する層を透過する波長を有し、前記第2のレーザビームを前記第2の透光性を有する層の表面から前記第2の剥離層に照射することを特徴とする半導体装置の作製方法。
- 請求項6または請求項9において、前記第1のレーザビームは、前記第1の剥離層で吸収され、且つ前記基板を透過する波長を有し、前記第1のレーザビームを前記基板から前記第1の剥離層に照射することを特徴とする半導体装置の作製方法。
- 請求項6または請求項9において、前記第2のレーザビームは前記第2の剥離層で吸収される波長を有し、且つ前記基板を透過する波長を有し、前記第1の層は前記第2のレーザビームを遮光し、前記第2のレーザビームを前記基板から前記第2の剥離層に照射することを特徴とする半導体装置の作製方法。
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JP2017028270A (ja) * | 2015-07-20 | 2017-02-02 | ウルトラテック インク | 電極系デバイス用のald処理のためのマスキング方法 |
JP2022078131A (ja) * | 2016-11-03 | 2022-05-24 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
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US20080087629A1 (en) | 2008-04-17 |
US7867907B2 (en) | 2011-01-11 |
JP5201937B2 (ja) | 2013-06-05 |
KR20080034809A (ko) | 2008-04-22 |
CN101271827A (zh) | 2008-09-24 |
KR101325788B1 (ko) | 2013-11-04 |
CN101271827B (zh) | 2011-06-08 |
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