JP2008133160A - 炭化硼素質焼結体およびその製造方法 - Google Patents
炭化硼素質焼結体およびその製造方法 Download PDFInfo
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- JP2008133160A JP2008133160A JP2006320965A JP2006320965A JP2008133160A JP 2008133160 A JP2008133160 A JP 2008133160A JP 2006320965 A JP2006320965 A JP 2006320965A JP 2006320965 A JP2006320965 A JP 2006320965A JP 2008133160 A JP2008133160 A JP 2008133160A
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- boron carbide
- sintered body
- graphite
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- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 title claims abstract description 143
- 229910052580 B4C Inorganic materials 0.000 title claims abstract description 142
- 238000004519 manufacturing process Methods 0.000 title claims description 20
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 142
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 130
- 239000010439 graphite Substances 0.000 claims abstract description 130
- 239000011148 porous material Substances 0.000 claims abstract description 94
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 34
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 30
- 238000010304 firing Methods 0.000 claims description 43
- 238000000034 method Methods 0.000 claims description 33
- 239000013078 crystal Substances 0.000 claims description 18
- 238000002156 mixing Methods 0.000 claims description 11
- 238000000465 moulding Methods 0.000 claims description 11
- 239000002994 raw material Substances 0.000 claims description 10
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 9
- 238000002844 melting Methods 0.000 claims description 8
- 230000008018 melting Effects 0.000 claims description 8
- 229910052796 boron Inorganic materials 0.000 claims description 7
- 238000001816 cooling Methods 0.000 claims description 7
- 238000001556 precipitation Methods 0.000 claims description 5
- 239000012778 molding material Substances 0.000 claims description 4
- 230000001376 precipitating effect Effects 0.000 claims description 3
- 238000003763 carbonization Methods 0.000 claims 1
- 238000000227 grinding Methods 0.000 abstract description 44
- 230000001105 regulatory effect Effects 0.000 abstract 2
- 239000000843 powder Substances 0.000 description 33
- 238000005245 sintering Methods 0.000 description 14
- 239000002002 slurry Substances 0.000 description 10
- 239000007789 gas Substances 0.000 description 8
- 238000005520 cutting process Methods 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 6
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- 229910052799 carbon Inorganic materials 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 230000000644 propagated effect Effects 0.000 description 6
- 238000000280 densification Methods 0.000 description 5
- 238000009616 inductively coupled plasma Methods 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- 229910052582 BN Inorganic materials 0.000 description 4
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000001513 hot isostatic pressing Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 238000010298 pulverizing process Methods 0.000 description 4
- 238000002441 X-ray diffraction Methods 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000007791 liquid phase Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 238000007088 Archimedes method Methods 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000004677 Nylon Substances 0.000 description 2
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 2
- 239000002202 Polyethylene glycol Substances 0.000 description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 238000005553 drilling Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 238000010191 image analysis Methods 0.000 description 2
- 150000003949 imides Chemical class 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 229920001778 nylon Polymers 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 229920001223 polyethylene glycol Polymers 0.000 description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 description 2
- 238000002490 spark plasma sintering Methods 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000007545 Vickers hardness test Methods 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 229910021431 alpha silicon carbide Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000004939 coking Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000013507 mapping Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 239000012188 paraffin wax Substances 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000004445 quantitative analysis Methods 0.000 description 1
- 230000008707 rearrangement Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 238000000638 solvent extraction Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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Abstract
【解決手段】炭化硼素を主成分とし、グラファイトおよび炭化珪素を含み、気孔を有する炭化硼素質焼結体からなり、前記グラファイトが前記気孔を規定する気孔規定面に主として存在させることで、高い硬度を維持したままで研削加工性の高い焼結体を提供する。
【選択図】図1
Description
2:気孔
3:グラファイト
4:炭化珪素
Claims (11)
- 炭化硼素を主成分とし、グラファイトおよび炭化珪素を含み、複数の気孔を有する炭化硼素質焼結体であって、前記グラファイトは、主として前記気孔を規定する気孔規定面において少なくとも一部が露出するように存在することを特徴とする、炭化硼素質焼結体。
- 断面視において断面が露見する前記気孔の該断面における前記気孔規定面の長さの総和をLaとし、該気孔規定面において前記グラファイトが露出している部位の長さの総和をLpとしたとき、(Lp/La)が0.3以上である、請求項1に記載の炭化硼素質焼結体。
- 前記グラファイトは、その含有量が前記炭化硼素質焼結体100質量%に対して1質量%以上20質量%以下であり、前記炭化珪素は、その含有量が前記炭化硼素質焼結体100質量%に対して0.1質量%以上10質量%以下である、請求項1または2に記載の炭化硼素質焼結体。
- 前記グラファイトは、前記気孔規定面に少なくとも一部が露出しているものの存在比率が全体の80%以上である、請求項1から3のいずれか一つに記載の炭化硼素質焼結体。
- 前記グラファイトは、その結晶形状が異方性形状である、請求項1から4のいずれか一つに記載の炭化硼素質焼結体。
- 前記グラファイトは、その長径の平均値が1μm以上15μm以下である、請求項5に記載の炭化硼素質焼結体。
- 前記炭化硼素質焼結体は、その気孔率が10%以下である、請求項1から6のいずれか一つに記載の炭化硼素質焼結体。
- 前記炭化硼素質焼結体は、その気孔率が1%以上6%以下である、請求項7に記載の炭化硼素質焼結体。
- 炭化硼素にグラファイトおよび炭化珪素を添加、調合して原料を得る調合工程と、前記原料を含む成形材料を成形して成形体を得る成形工程と、前記成形体を焼成する焼成工程とを含む炭化硼素質焼結体の製造方法であって、
前記焼成工程は、前記成形体中の前記グラファイトを第1基準温度で溶解させる溶解工程と、前記第1基準温度より高い第2基準温度に昇温した後で冷却することにより、前記溶解工程において溶解したグラファイトを析出させる析出工程とを含むことを特徴とする、炭化硼素質焼結体の製造方法。 - 前記焼成工程は常圧焼成である、請求項9に記載の炭化硼素質焼結体の製造方法。
- 前記第1基準温度は2100℃以上2300℃以下であり、前記第2基準温度は2200℃以上2350℃以下である、請求項9または10に記載の炭化硼素質焼結体の製造方法。
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US11/946,783 US7776773B2 (en) | 2006-11-29 | 2007-11-28 | Boron carbide sintered body and method of manufacturing the same and protective body |
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JP2007230787A (ja) * | 2006-02-27 | 2007-09-13 | Kyocera Corp | 炭化硼素質焼結体およびこれを用いた防護部材 |
JP2010107340A (ja) * | 2008-10-30 | 2010-05-13 | Kyocera Corp | 中性子吸収体および原子力発電装置用制御棒 |
JP2011063453A (ja) * | 2009-09-15 | 2011-03-31 | Mino Ceramic Co Ltd | 炭化ホウ素−炭化ケイ素複合セラミックス及び該セラミックスの製造方法 |
JP2013500227A (ja) * | 2009-07-24 | 2013-01-07 | サン−ゴバン セラミックス アンド プラスティクス,インコーポレイティド | 焼結炭化ホウ素の形成方法 |
JP2020073420A (ja) * | 2018-08-13 | 2020-05-14 | エスケーシー ソルミックス カンパニー,リミテッド | 炭化ホウ素焼結体及びこれを含むエッチング装置 |
KR102124766B1 (ko) * | 2019-12-31 | 2020-06-19 | (주)삼양컴텍 | 플라즈마 처리 장치 및 그 제조방법 |
KR102177139B1 (ko) * | 2019-05-17 | 2020-11-11 | 비씨엔씨 주식회사 | 저항 조절이 가능한 반도체 제조용 부품 |
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JP2007230787A (ja) * | 2006-02-27 | 2007-09-13 | Kyocera Corp | 炭化硼素質焼結体およびこれを用いた防護部材 |
JP2010107340A (ja) * | 2008-10-30 | 2010-05-13 | Kyocera Corp | 中性子吸収体および原子力発電装置用制御棒 |
JP2013500227A (ja) * | 2009-07-24 | 2013-01-07 | サン−ゴバン セラミックス アンド プラスティクス,インコーポレイティド | 焼結炭化ホウ素の形成方法 |
JP2011063453A (ja) * | 2009-09-15 | 2011-03-31 | Mino Ceramic Co Ltd | 炭化ホウ素−炭化ケイ素複合セラミックス及び該セラミックスの製造方法 |
JP2020073420A (ja) * | 2018-08-13 | 2020-05-14 | エスケーシー ソルミックス カンパニー,リミテッド | 炭化ホウ素焼結体及びこれを含むエッチング装置 |
KR102177139B1 (ko) * | 2019-05-17 | 2020-11-11 | 비씨엔씨 주식회사 | 저항 조절이 가능한 반도체 제조용 부품 |
KR102124766B1 (ko) * | 2019-12-31 | 2020-06-19 | (주)삼양컴텍 | 플라즈마 처리 장치 및 그 제조방법 |
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