JP2008117919A - Solid-state imaging device and manufacturing method thereof - Google Patents

Solid-state imaging device and manufacturing method thereof Download PDF

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JP2008117919A
JP2008117919A JP2006299334A JP2006299334A JP2008117919A JP 2008117919 A JP2008117919 A JP 2008117919A JP 2006299334 A JP2006299334 A JP 2006299334A JP 2006299334 A JP2006299334 A JP 2006299334A JP 2008117919 A JP2008117919 A JP 2008117919A
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partition walls
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JP5061580B2 (en
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Katsumi Yamamoto
克己 山本
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Toppan Inc
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Toppan Printing Co Ltd
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Priority to KR1020087016059A priority patent/KR100994845B1/en
Priority to CN2007800018412A priority patent/CN101366118B/en
Priority to PCT/JP2007/071046 priority patent/WO2008053849A1/en
Priority to TW96141282A priority patent/TWI467747B/en
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a solid-state imaging device capable of preventing gas from being held into the inside of a spacer when a large pressure is applied in a manufacturing process, and preventing the generation of a defective product. <P>SOLUTION: The solid-state imaging device comprises a solid-state imaging element chip, a transparent plate so arranged as to face the light-receiving surface of the solid-state imaging element chip, a spacer arranged like a frame at the peripheral portion of the light-receiving surface of the solid-state imaging element chip to keep the distance between the solid-state imaging element chip and the transparent plate constant, and an adhesive layer for sealing the periphery of the space between the solid-state imaging element chip and the transparent plate. In this solid-state imaging device, the spacer is composed of a plurality of partition walls, and an opening for air drainage is formed on at least an outermost one of the partition walls. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

本発明は、固体撮像装置及びその製造方法に係り、特に、製造時の不良品の発生を防止した固体撮像装置及びその製造方法に関する。   The present invention relates to a solid-state imaging device and a manufacturing method thereof, and more particularly to a solid-state imaging device and a manufacturing method thereof that prevent generation of defective products during manufacturing.

近年、ＣＣＤやＣＭＯＳ等の固体撮像素子を用いたデジタルカメラやビデオカメラが普及しているが、この固体撮像素子をＣＳＰ（チップサイズパッケージ）方式を用いて更に小型化する技術が開発されている。このような小型固体撮像素子は、携帯電話等の小型・軽量・薄型化が望まれる電子機器に内蔵するのに好適である。   In recent years, digital cameras and video cameras using solid-state imaging devices such as CCDs and CMOSs have become widespread, but a technology for further downsizing the solid-state imaging devices using a CSP (chip size package) system has been developed. . Such a small solid-state imaging device is suitable for being incorporated in an electronic device that is desired to be small, light, and thin, such as a mobile phone.

小型固体撮像素子は、受光面に多数のマイクロレンズを設けた固体撮像素子チップと赤外カット透明ガラス板とが、間に一定の距離を維持するためのスペーサを介在させて、対向して配置され、その間隙部周縁が接着剤で封止された構造を有する。   A small solid-state image sensor is placed opposite to each other, with a spacer for maintaining a certain distance between the solid-state image sensor chip with a large number of microlenses on the light receiving surface and an infrared cut transparent glass plate. The periphery of the gap is sealed with an adhesive.

このように構成される小型固体撮像素子は、固体撮像素子チップが多面付けされている固体撮像素子ウエハと赤外カット透明ガラス基板を、間に個々の固体撮像素子チップの周辺に設けられた枠状のスペーサを介して貼り合せた後、固体撮像素子ウエハの裏面を研磨して、その厚さを３０〜１００μｍ程度にし、次いで固体撮像素子チップごとに切断することにより製造される。   A small solid-state image sensor configured in this way is a frame provided around each solid-state image sensor chip between a solid-state image sensor wafer and an infrared cut transparent glass substrate on which the solid-state image sensor chip is multifaceted. After being bonded through a spacer, the back surface of the solid-state imaging device wafer is polished to a thickness of about 30 to 100 μm, and then cut for each solid-state imaging device chip.

この場合、固体撮像素子ウエハと赤外カット透明ガラス基板との間の距離は、スペーサの高さにより規定され、このスペーサの高さを２０〜３０ｃｍの径のウエハ全面で均一にする必要がある。しかし、従来のスペーサでは、貼り合せの際に赤外カット透明ガラス基板の上から圧力を加えると、枠状のスペーサの内側の気体が逃げる出口がないため、内側に気泡を抱き込む形となる。この気泡は光学的な弊害を招くとともに、気体の圧力により接着剤がはみ出て、不良品を発生する原因となる。
特開２００２−３２９８５２号公報 In this case, the distance between the solid-state imaging device wafer and the infrared cut transparent glass substrate is defined by the height of the spacer, and it is necessary to make the height of the spacer uniform over the entire wafer having a diameter of 20 to 30 cm. . However, in the conventional spacer, when pressure is applied from above the infrared cut transparent glass substrate at the time of bonding, there is no outlet from which the gas inside the frame-shaped spacer escapes, so that bubbles are held inside. . The bubbles cause an optical problem, and the adhesive protrudes due to the gas pressure, causing defective products.
JP 2002-329852 A

本発明は、以上のような事情の下になされ、製造工程において大きな圧力が加わった際に、スペーサの内側に気体を抱き込むことがなく、また不良品の発生を生ずることのない固体撮像装置を提供することを目的とする。   The present invention has been made under the circumstances as described above. When a large pressure is applied in the manufacturing process, the solid-state imaging device does not entrap gas inside the spacer and does not cause defective products. The purpose is to provide.

上記課題を解決するために、本発明の第１の態様は、固体撮像素子チップと、この固体撮像素子チップの受光面に対向して配置された透明板と、前記固体撮像素子チップ及び透明板の間の間隔を一定に保持するために、前記固体撮像素子チップの受光面の周辺部に枠状に配置されたスペーサと、前記固体撮像素子チップ及び透明板の間の空隙の周縁を封止する接着層とを具備する固体撮像装置において、前記スペーサは、複数個の隔壁からなり、そのうちの少なくとも外側の１つに、空気抜きのための切り欠きが形成されていることを特徴とする固体撮像装置を提供する。   In order to solve the above-described problem, a first aspect of the present invention includes a solid-state image sensor chip, a transparent plate disposed to face the light receiving surface of the solid-state image sensor chip, and the solid-state image sensor chip and the transparent plate. In order to maintain a constant distance between the solid-state imaging device chip, a spacer disposed in a frame shape around the light-receiving surface of the solid-state imaging device chip, and an adhesive layer that seals the periphery of the gap between the solid-state imaging device chip and the transparent plate; The spacer includes a plurality of partition walls, and at least one of the spacers is formed with a notch for air venting. .

このような固体撮像装置において、スペーサは、３つの隔壁からなるものとすることができる。また、スペーサを構成する３つの隔壁は、高さの高い１つの隔壁と、その内側及び外側に設けられた高さの低い２つの隔壁であるものとすることができる。   In such a solid-state imaging device, the spacer can be composed of three partition walls. The three partition walls constituting the spacer may be one partition wall having a high height and two partition walls having a low height provided inside and outside the partition wall.

スペーサは、ポリイミド樹脂、エポキシ樹脂、及びエポキシ−アクリレート樹脂からなる群から選ばれた少なくとも１種の樹脂により構成することができる。   The spacer can be composed of at least one resin selected from the group consisting of polyimide resin, epoxy resin, and epoxy-acrylate resin.

透明板の下面の、固体撮像素子チップの受光面の周辺部に相当する部分には、遮光薄膜を形成することができる。   A light-shielding thin film can be formed on the lower surface of the transparent plate corresponding to the peripheral portion of the light-receiving surface of the solid-state image sensor chip.

本発明の第２の態様は、上述の固体撮像装置の製造方法であって、複数の固体撮像素子チップが設けられた固体撮像素子ウエハと透明基板の少なくともいずれか一方の、個々の固体撮像素子チップの周辺部又はそれに対応する位置に、スペーサを構成する複数個の枠状の隔壁を形成する工程、前記固体撮像素子ウエハと透明基板を、前記複数個の隔壁を間に介在させた状態で、前記ウエハ上の個々の固体撮像素子チップの周縁部に設けられた接着剤層を介して貼り合せる工程、及び前記貼り合された構造を固体撮像素子チップごとに切断する工程を具備し、前記複数個の枠状の隔壁の少なくとも外側の１つに空気抜きのための切り欠きが形成されていることを特徴とする固体撮像装置の製造方法を提供する。   According to a second aspect of the present invention, there is provided a method for manufacturing the above-described solid-state imaging device, wherein each solid-state imaging element includes at least one of a solid-state imaging element wafer provided with a plurality of solid-state imaging element chips and a transparent substrate. A step of forming a plurality of frame-shaped partition walls constituting a spacer at a peripheral portion of the chip or a position corresponding thereto, the solid-state imaging device wafer and a transparent substrate with the plurality of partition walls interposed therebetween A step of bonding via an adhesive layer provided on a peripheral edge of each solid-state image sensor chip on the wafer, and a step of cutting the bonded structure for each solid-state image sensor chip, Provided is a method of manufacturing a solid-state imaging device, wherein a notch for venting air is formed in at least one outer side of a plurality of frame-shaped partition walls.

本発明によると、スペーサが複数個の隔壁からなり、そのうちの少なくとも外側の１つに、空気抜きのための切り欠きが形成されてため、製造工程、特にウエハと透明基板との貼り合せ工程において大きな圧力が加わった際に、スペーサの内側に気体を抱き込むことがなく、また不良品の発生を生ずることのない固体撮像装置が提供される。   According to the present invention, the spacer is composed of a plurality of partition walls, and at least one of them is formed with a notch for venting air, so that the manufacturing process, particularly in the bonding process between the wafer and the transparent substrate is large. Provided is a solid-state imaging device that does not entrap gas inside the spacer and does not cause defective products when pressure is applied.

以下、本発明の実施形態について説明する。   Hereinafter, embodiments of the present invention will be described.

図１は、本発明の一実施形態に係る固体撮像装置を示す断面図である。図１において、固体撮像素子チップ１の上面（受光面）には、複数のマイクロレンズ２が設けられており、これらマイクロレンズ２に対向して、透明板、即ち赤外カット透明ガラス板３が配置されている。なお、固体撮像素子チップ１としては、ＣＣＤやＣＭＯＳセンサを用いることができる。   FIG. 1 is a cross-sectional view showing a solid-state imaging device according to an embodiment of the present invention. In FIG. 1, a plurality of microlenses 2 are provided on the upper surface (light receiving surface) of the solid-state imaging device chip 1, and a transparent plate, that is, an infrared cut transparent glass plate 3 is opposed to the microlenses 2. Has been placed. As the solid-state image sensor chip 1, a CCD or CMOS sensor can be used.

固体撮像素子チップ１と赤外カット透明ガラス板３の間には、枠状の３つの隔壁からなるスペーサ４が介在しており、両者の間隔を一定に保持している。なお、透明ガラス板３の下面周辺部には、外部光のフレアを防止するための遮光薄膜５が形成されている。   Between the solid-state imaging device chip 1 and the infrared cut transparent glass plate 3, a spacer 4 composed of three frame-shaped partitions is interposed, and the distance between the two is kept constant. A light-shielding thin film 5 for preventing flare of external light is formed around the lower surface of the transparent glass plate 3.

図２は、赤外カット透明ガラス板３を取り外した状態の固体撮像素子チップ１の上面図である。なお、マイクロレンズ２は省略されている。図２に示すように、固体撮像素子チップ１の上面の受光面を囲むように、スペーサ４を構成するサイズの異なる矩形枠状の３つの隔壁４ａ，４ｂ，４ｃが、外側に向かってサイズを拡大するように、入れ子状に形成されており、これら３つの隔壁４ａ，４ｂ，４ｃの同一の位置には、対向する位置に切り欠き６ａ，６ｂが形成されている。   FIG. 2 is a top view of the solid-state imaging device chip 1 with the infrared cut transparent glass plate 3 removed. Note that the microlens 2 is omitted. As shown in FIG. 2, the three partition walls 4 a, 4 b, 4 c having different sizes constituting the spacer 4 so as to surround the light receiving surface on the upper surface of the solid-state imaging device chip 1 are sized outward. It is formed in a nested shape so as to expand, and cutouts 6a and 6b are formed in the same position of these three partition walls 4a, 4b and 4c at opposing positions.

隔壁４ａ，４ｂ，４ｃの高さは、マイクロレンズ２が透明ガラス基板と接触して損傷することがないように、マイクロレンズ２の高さよりも高く、例えば４０〜１００μｍであり、幅は、例えば７０〜１５０μｍである。   The height of the partition walls 4a, 4b, and 4c is higher than the height of the microlens 2 so that the microlens 2 does not come into contact with the transparent glass substrate and is damaged, for example, 40 to 100 μm. 70-150 μm.

また、切り欠き６ａ，６ｂの幅は、後述するように、貼り合せ工程で押圧する際に空気が抜ければよいので、特に限定されないが、通常は７０〜３００μｍである。   Further, the width of the notches 6a and 6b is not particularly limited as long as the air can escape when pressed in the bonding step, as will be described later, but is usually 70 to 300 μm.

これら３つの隔壁４ａ，４ｂ，４ｃからなるスペーサ４の左右の外側には、電極パッド７が設けられており、これら電極パッド７は、側壁周り配線層８に接続されている。   Electrode pads 7 are provided on the left and right outer sides of the spacer 4 composed of these three partition walls 4 a, 4 b, and 4 c, and these electrode pads 7 are connected to the side wall wiring layer 8.

図１に示すように、固体撮像素子チップ１と赤外カット透明ガラス板３の間隙の周縁は、紫外線硬化性樹脂を硬化させてなる接着剤層９により封止されている。   As shown in FIG. 1, the periphery of the gap between the solid-state imaging device chip 1 and the infrared cut transparent glass plate 3 is sealed with an adhesive layer 9 formed by curing an ultraviolet curable resin.

固体撮像素子チップ１の底面周辺部には裏面電極（図示せず）が設けられており、上面周辺部に設けられた電極パッド６と裏面電極を接続するために、固体撮像素子チップ１の上面周辺部から側面を通って底面周辺部に延びる側壁周り配線層８が形成されている。また、固体撮像素子チップ１の底面周辺部における側壁周り配線層８の部分には、外部接続用バンプ１０が形成されている。   A back surface electrode (not shown) is provided at the periphery of the bottom surface of the solid-state image sensor chip 1, and the top surface of the solid-state image sensor chip 1 is connected to connect the electrode pad 6 provided at the periphery of the top surface and the back electrode. A side-wall wiring layer 8 extending from the peripheral part to the peripheral part of the bottom surface through the side surface is formed. Further, external connection bumps 10 are formed on the side wall peripheral wiring layer 8 at the bottom peripheral portion of the solid-state imaging device chip 1.

このような構造の側部及び底部は、ソルダーレジストからなる絶縁層１１により被覆されている。   The side part and the bottom part of such a structure are covered with an insulating layer 11 made of a solder resist.

以上のように構成される固体撮像装置は、次のような製造プロセスにより製造される。   The solid-state imaging device configured as described above is manufactured by the following manufacturing process.

即ち、まず、複数の固体撮像素子チップが設けられ、その上面に複数のマイクロレンズが形成された固体撮像素子ウエハと、このウエハと同程度のサイズの透明ガラス基板を準備する。次いで、これら固体撮像素子ウエハ及び透明ガラス基板のいずれか一方又は双方に、個々の固体撮像素子チップの周辺部又はそれに対応する位置に、切り欠きを有する複数個、図１に示す例では３つの隔壁を形成する。切り欠きは、図１に示す例ではすべての隔壁に形成したが、少なくとも最も外側の１つの隔壁に形成すればよい。   That is, first, a solid-state image sensor wafer provided with a plurality of solid-state image sensor chips and a plurality of microlenses formed on the upper surface thereof, and a transparent glass substrate having the same size as this wafer are prepared. Next, in one or both of the solid-state image pickup device wafer and the transparent glass substrate, a plurality of notches in the peripheral portion of each solid-state image pickup device chip or corresponding positions, three in the example shown in FIG. A partition is formed. In the example shown in FIG. 1, the notches are formed in all the partition walls, but may be formed in at least one outermost partition wall.

なお、隔壁４ａ，４ｂ，４ｃの高さは異ならせてもよく、例えば、外側と内側の隔壁の高さを低く、間の隔壁の高さを低くすることができる。高さの高い隔壁の高さは、例えば５０〜１２０μｍであり、幅は、例えば７０〜１５０μｍである。また、高さの低い隔壁の高さは、例えば４０〜１００μｍであり、幅は、例えば７０〜１５０μｍである。   Note that the heights of the partition walls 4a, 4b, and 4c may be different. For example, the height of the partition walls on the outer side and the inner side can be reduced, and the height of the partition wall between them can be decreased. The height of the high partition wall is, for example, 50 to 120 μm, and the width is, for example, 70 to 150 μm. Moreover, the height of the low partition is, for example, 40 to 100 μm, and the width is, for example, 70 to 150 μm.

隔壁の形成は、感光性樹脂組成物をフォトリソグラフィーによりパターニングすることにより行うことができる。切り欠きは、隔壁の形成と同時に、または隔壁の形成後に形成してもよい。   The partition wall can be formed by patterning the photosensitive resin composition by photolithography. The notch may be formed simultaneously with the formation of the partition walls or after the formation of the partition walls.

構成樹脂としては、ポリイミド樹脂、エポキシ樹脂、及びエポキシ−アクリレート樹脂等を用いることができる。   As the constituent resin, polyimide resin, epoxy resin, epoxy-acrylate resin, or the like can be used.

次に、固体撮像素子ウエハの、隔壁の外側の位置に、紫外線硬化性樹脂等からなる接着剤層を塗布する。そして、固体撮像素子ウエハと透明ガラス基板とを貼り合せる。なお、透明ガラス基板の個々の固体撮像素子チップの周辺部に対応する位置には、遮光薄膜５が形成されている。この遮光薄膜５は、酸化クロム（ＣｒＯｘ）、クロム（Ｃｒ）及び酸化クロム（ＣｒＯｘ）の３層膜により構成することができる。あるいは、カーボンブラックを含む感光性樹脂により構成してもよい。この遮光薄膜５により、外部光のフレアを防止することができる。   Next, an adhesive layer made of an ultraviolet curable resin or the like is applied to a position outside the partition wall of the solid-state imaging device wafer. And a solid-state image sensor wafer and a transparent glass substrate are bonded together. In addition, the light shielding thin film 5 is formed in the position corresponding to the peripheral part of each solid-state image sensor chip | tip of a transparent glass substrate. The light-shielding thin film 5 can be composed of a three-layer film of chromium oxide (CrOx), chromium (Cr), and chromium oxide (CrOx). Or you may comprise by the photosensitive resin containing carbon black. The light shielding thin film 5 can prevent flare of external light.

貼り合せの際には、透明ガラス基板に大きな圧力が加えられ、枠状の隔壁により囲まれた空間内の気体は圧縮されるが、隔壁に設けられた切り欠きを通して外側に逃がすことができる。   At the time of bonding, a large pressure is applied to the transparent glass substrate, and the gas in the space surrounded by the frame-shaped partition is compressed, but can be released to the outside through a notch provided in the partition.

その結果、隔壁の内側に気泡を抱き込むことが防止され、気泡が光学的な弊害を招くことはない。また、気体の圧力により接着剤がはみ出て、不良品を発生することが抑制される。   As a result, it is possible to prevent the bubbles from being held inside the partition wall, and the bubbles do not cause an optical problem. Moreover, it is suppressed that an adhesive protrudes according to the gas pressure and a defective product is generated.

また、隔壁４ａ，４ｂ，４ｃの高さは異ならせ、例えば、外側と内側の隔壁の高さを低く、中間の隔壁の高さを高くすることにより、高さの高い中間の隔壁が圧縮され、高さが減少し、固体撮像素子ウエハと透明基板との間の距離は減少する。しかし、その両側の隔壁の存在のため、固体撮像素子ウエハと透明基板との間の距離はそれ以上減少せず、全面にわたって均一に保持される。即ち、圧縮され、所定の反発力を有する中間の隔壁と、その両側の高さの低い隔壁とからなるスペーサにより、貼り合せの際の大きい圧力によっても、固体撮像素子ウエハと透明基板との間の距離は全面にわたって均一に保持することができる。   Also, the height of the partition walls 4a, 4b, 4c is made different. For example, the height of the intermediate partition wall having a high height is compressed by decreasing the height of the partition walls on the outside and the inside and increasing the height of the intermediate partition wall. , The height decreases, and the distance between the solid-state imaging device wafer and the transparent substrate decreases. However, due to the presence of the partition walls on both sides, the distance between the solid-state imaging device wafer and the transparent substrate does not decrease any more and is maintained uniformly over the entire surface. That is, a spacer composed of an intermediate partition wall that is compressed and has a predetermined repulsive force and a partition wall having a low height on both sides of the space between the solid-state imaging device wafer and the transparent substrate even under a large pressure during bonding. This distance can be maintained uniformly over the entire surface.

なお、貼り合せ後、紫外線の照射等により接着剤層を硬化することにより、固体撮像素子ウエハと透明基板との間の距離は固定される。   In addition, after bonding, the distance between a solid-state image sensor wafer and a transparent substrate is fixed by hardening | curing an adhesive bond layer by irradiation of an ultraviolet-ray.

その後、貼り合された構造を、接着剤層の位置で固体撮像素子チップごとに、ダイシング装置により切断し、側壁周り配線層７及びソルダーレジストからなる絶縁層１０を形成し、絶縁層１０に形成された孔を通して外部接続用バンプ９を形成することにより、図１に示すような１つの固体撮像素子チップを備える固体撮像素子が製造される。   Thereafter, the bonded structure is cut for each solid-state imaging device chip at the position of the adhesive layer by a dicing apparatus, and the insulating layer 10 including the sidewall wiring layer 7 and the solder resist is formed, and the insulating layer 10 is formed. By forming the external connection bumps 9 through the formed holes, a solid-state imaging device including one solid-state imaging device chip as shown in FIG. 1 is manufactured.

図２に示す例では、３つの隔壁４ａ，４ｂ，４ｃの対向する位置に、切り欠き６ａ及び切り欠き６ｂを形成したが、本発明はこれに限らず、切り欠き６ａ又は切り欠き６ｂのいずれか一方を設けてもよい。また、図２に示す例では、３つの隔壁４ａ，４ｂ，４ｃすべてに切り欠きを形成したが、少なくとも最も外側の４ｃに形成することで足りる。   In the example shown in FIG. 2, the notch 6a and the notch 6b are formed at the positions where the three partition walls 4a, 4b, and 4c are opposed to each other. However, the present invention is not limited to this, and either the notch 6a or the notch 6b is used. Either one may be provided. In the example shown in FIG. 2, the notches are formed in all the three partition walls 4a, 4b, 4c, but it is sufficient to form at least the outermost 4c.

なお、隔壁の個数は、３つに限らず、４つ以上であっても、また場合によっては２つであってもよい。   The number of partition walls is not limited to three, but may be four or more, or may be two in some cases.

本発明の一実施形態に係る固体撮像装置を示す断面図である。It is sectional drawing which shows the solid-state imaging device which concerns on one Embodiment of this invention. 図１に示す固体撮像装置の赤外カット透明ガラス板を取り外した状態の上面図である。It is a top view of the state which removed the infrared cut transparent glass plate of the solid-state imaging device shown in FIG.

符号の説明Explanation of symbols

１…固体撮像素子チップ、２…マイクロレンズ、３…赤外カット透明ガラス板、４…スペーサ、５…遮光薄膜、６ａ，６ｂ…切り欠き、７…電極パッド、８…側壁周り配線層、９…接着剤層、１０…外部接続用バンプ、１１…絶縁層。   DESCRIPTION OF SYMBOLS 1 ... Solid-state image sensor chip, 2 ... Micro lens, 3 ... Infrared cut transparent glass plate, 4 ... Spacer, 5 ... Light-shielding thin film, 6a, 6b ... Notch, 7 ... Electrode pad, 8 ... Wiring layer around side wall, 9 ... adhesive layer, 10 ... bump for external connection, 11 ... insulating layer.

Claims (6)

固体撮像素子チップと、この固体撮像素子チップの受光面に対向して配置された透明板と、前記固体撮像素子チップ及び透明板の間の間隔を一定に保持するために、前記固体撮像素子チップの受光面の周辺部に枠状に配置されたスペーサと、前記固体撮像素子チップ及び透明板の間の空隙の周縁を封止する接着層とを具備する固体撮像装置において、前記スペーサは、複数個の隔壁からなり、そのうちの少なくとも外側の１つに、空気抜きのための切り欠きが形成されていることを特徴とする固体撮像装置。   In order to maintain a constant distance between the solid-state image sensor chip, the transparent plate disposed opposite to the light-receiving surface of the solid-state image sensor chip, and the solid-state image sensor chip and the transparent plate, the light-receiving of the solid-state image sensor chip In the solid-state imaging device comprising a spacer arranged in a frame shape at the periphery of the surface and an adhesive layer that seals a peripheral edge of the gap between the solid-state imaging element chip and the transparent plate, the spacer includes a plurality of partition walls. A solid-state imaging device, wherein a notch for venting air is formed in at least one of the outer sides. 前記スペーサは、３つの隔壁からなることを特徴とする請求項１に記載の固体撮像装置。   The solid-state imaging device according to claim 1, wherein the spacer includes three partition walls. 前記スペーサを構成する３つの隔壁は、高さの高い１つの隔壁と、その内側及び外側に設けられた高さの低い２つの隔壁であることを特徴とする請求項２に記載の固体撮像装置。   3. The solid-state imaging device according to claim 2, wherein the three partition walls constituting the spacer are one partition wall having a high height and two partition walls having a low height provided inside and outside the partition wall. . 前記スペーサは、ポリイミド樹脂、エポキシ樹脂、及びエポキシ−アクリレート樹脂からなる群から選ばれた少なくとも１種の樹脂からなることを特徴とする請求項１〜３のいずれかに記載の固体撮像装置。   The solid-state imaging device according to claim 1, wherein the spacer is made of at least one resin selected from the group consisting of a polyimide resin, an epoxy resin, and an epoxy-acrylate resin. 前記透明板の下面の、前記固体撮像素子チップの受光面の周辺部に相当する部分に、遮光薄膜が形成されていることを特徴とする請求項１〜４のいずれかに記載の固体撮像装置。   5. The solid-state imaging device according to claim 1, wherein a light-shielding thin film is formed in a portion corresponding to a peripheral portion of a light receiving surface of the solid-state imaging element chip on a lower surface of the transparent plate. . 請求項１に記載の固体撮像装置の製造方法であって、複数の固体撮像素子チップが設けられた固体撮像素子ウエハと透明基板の少なくともいずれか一方の、個々の固体撮像素子チップの周辺部又はそれに対応する位置に、スペーサを構成する複数個の枠状の隔壁を形成する工程、
前記固体撮像素子ウエハと透明基板を、前記複数個の隔壁を間に介在させた状態で、前記ウエハ上の個々の固体撮像素子チップの周縁部に設けられた接着剤層を介して貼り合せる工程、及び
前記貼り合された構造を固体撮像素子チップごとに切断する工程
を具備し、前記複数個の枠状の隔壁の少なくとも外側の１つに空気抜きのための切り欠きが形成されていることを特徴とする固体撮像装置の製造方法。 The manufacturing method of the solid-state imaging device according to claim 1, wherein at least one of a solid-state imaging device wafer provided with a plurality of solid-state imaging device chips and a transparent substrate, A step of forming a plurality of frame-shaped partition walls constituting the spacers at positions corresponding thereto;
A step of bonding the solid-state imaging element wafer and the transparent substrate through an adhesive layer provided on a peripheral edge of each solid-state imaging element chip on the wafer with the plurality of partition walls interposed therebetween. And a step of cutting the bonded structure for each solid-state imaging device chip, and at least one of the outer sides of the plurality of frame-shaped partition walls is formed with a notch for venting air. A method for manufacturing a solid-state imaging device.
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