JP5272300B2 - Manufacturing method of solid-state imaging device - Google Patents
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- JP5272300B2 JP5272300B2 JP2006308214A JP2006308214A JP5272300B2 JP 5272300 B2 JP5272300 B2 JP 5272300B2 JP 2006308214 A JP2006308214 A JP 2006308214A JP 2006308214 A JP2006308214 A JP 2006308214A JP 5272300 B2 JP5272300 B2 JP 5272300B2
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- 238000003384 imaging method Methods 0.000 title claims description 77
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 239000012790 adhesive layer Substances 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 18
- 125000006850 spacer group Chemical group 0.000 claims description 15
- 238000005498 polishing Methods 0.000 claims description 12
- 239000010410 layer Substances 0.000 claims description 11
- 229920005989 resin Polymers 0.000 claims description 11
- 239000011347 resin Substances 0.000 claims description 11
- 239000000853 adhesive Substances 0.000 claims description 10
- 230000001070 adhesive effect Effects 0.000 claims description 10
- 229920001651 Cyanoacrylate Polymers 0.000 claims description 3
- MWCLLHOVUTZFKS-UHFFFAOYSA-N Methyl cyanoacrylate Chemical compound COC(=O)C(=C)C#N MWCLLHOVUTZFKS-UHFFFAOYSA-N 0.000 claims description 3
- 239000012948 isocyanate Substances 0.000 claims description 3
- 150000002513 isocyanates Chemical class 0.000 claims description 3
- 238000000034 method Methods 0.000 claims description 3
- 239000007787 solid Substances 0.000 claims description 3
- 239000003822 epoxy resin Substances 0.000 claims description 2
- 229920000647 polyepoxide Polymers 0.000 claims description 2
- 229920002803 thermoplastic polyurethane Polymers 0.000 claims description 2
- 239000011521 glass Substances 0.000 description 13
- 238000001444 catalytic combustion detection Methods 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
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- Solid State Image Pick-Up Elements (AREA)
Description
本発明は、固体撮像装置及びその製造方法に係り、特に、大きい強度を有し、製造時に加わる力に耐えることの可能な固体撮像装置及びその製造方法に関する。 The present invention relates to a solid-state imaging device and a manufacturing method thereof, and more particularly, to a solid-state imaging device having a large strength and capable of withstanding a force applied during manufacturing, and a manufacturing method thereof.
近年、ＣＣＤやＣＭＯＳ等の固体撮像素子を用いたデジタルカメラやビデオカメラが普及しているが、この固体撮像素子をＣＳＰ（チップサイズパッケージ）方式を用いて更に小型化する技術が開発されている。このような小型固体撮像素子は、携帯電話等の小型・軽量・薄型化が望まれる電子機器に内蔵するのに好適である。 In recent years, digital cameras and video cameras using solid-state imaging devices such as CCDs and CMOSs have become widespread, but a technology for further downsizing the solid-state imaging devices using a CSP (chip size package) system has been developed. . Such a small solid-state imaging device is suitable for being incorporated in an electronic device that is desired to be small, light, and thin, such as a mobile phone.
小型固体撮像素子は、受光面に多数のマイクロレンズを設けた固体撮像素子チップと赤外カット透明ガラス板とが、間に一定の距離を維持するためのスペーサを介在させて、対向して配置され、間隙部周縁が接着剤で封止された構造を有する（例えば、特許文献１参照）。 A small solid-state image sensor is placed opposite to each other, with a spacer for maintaining a certain distance between the solid-state image sensor chip with a large number of microlenses on the light receiving surface and an infrared cut transparent glass plate. The peripheral edge of the gap is sealed with an adhesive (for example, see Patent Document 1).
このように構成される小型固体撮像素子は、直径２０〜３０μｍのシリコンウエハに複数の固体撮像素子チップを多面付けし、この固体撮像素子ウエハと赤外カット透明ガラス基板を、間にスペーサを介在させて接着層により貼り合せた後、固体撮像素子ウエハの裏面を研磨して薄くし、次いで固体撮像素子チップごとに切断することにより製造される。 The small solid-state imaging device configured as described above has a plurality of solid-state imaging device chips on a silicon wafer having a diameter of 20 to 30 μm, and a spacer is interposed between the solid-state imaging device wafer and the infrared cut transparent glass substrate. After being bonded by the adhesive layer, the back surface of the solid-state imaging device wafer is polished and thinned, and then cut for each solid-state imaging device chip.
この場合、固体撮像素子ウエハは、取り扱い上必要な強度の点から、当初は０．５ｍｍ程度の厚さである。しかし、固体撮像素子は出来るだけ薄いほうが、携帯電子機器に組み込む際に小さいスペースでよいために望ましい。 In this case, the solid-state imaging device wafer is initially about 0.5 mm thick from the viewpoint of strength required for handling. However, it is desirable that the solid-state imaging device is as thin as possible because a small space is required when it is incorporated into a portable electronic device.
従って、当初０．５ｍｍ程度の厚さの固体撮像素子ウエハを研磨により、最終的には３０〜１００μｍ程度にすることが望まれる。 Therefore, it is desired that the solid-state imaging device wafer having an initial thickness of about 0.5 mm is finally polished to about 30 to 100 μm.
しかし、固体撮像素子ウエハの研磨は、赤外カット透明ガラス基板を貼り合せ、間に空間を含む構造として研磨される。このような空間を含む構造は強度が小さいため、研磨時に加わる力に耐えることができない。
本発明は、以上のような事情の下になされ、製造工程において大きな圧力が加わった際にも、充分な強度を有し、ガラス基板と貼り合された固体撮像素子ウエハの裏面を研磨する際の横すべり力に充分に耐えることのできる固体撮像装置及びその製造方法を提供することを目的とする。 The present invention has been made under the circumstances as described above, and has sufficient strength even when a large pressure is applied in the manufacturing process, and is used when polishing the back surface of a solid-state imaging device wafer bonded to a glass substrate. It is an object of the present invention to provide a solid-state imaging device that can sufficiently withstand the lateral sliding force of and a manufacturing method thereof.
本発明の第１の態様は、５０μｍ〜１００μｍの厚さを有し、受光面に複数のマイクロレンズが配置された固体撮像素子と、この固体撮像素子の受光面に対向して配置された透明板と、前記固体撮像素子及び透明板の間の間隔を一定に保持するために、前記固体撮像素子の受光面の周辺部に枠状に配置されたスペーサと、このスペーサの外側の前記固体撮像素子及び透明板の間の空隙を封止する接着層とを具備する固体撮像装置の製造方法において、受光面にそれぞれ複数のマイクロレンズが配置された複数の固体撮像素子が設けられた固体撮像素子ウエハと透明基板とを、個々の固体撮像素子の周辺部にスペーサを介在させた状態で、個々の固体撮像素子のスペーサの外側に設けられた、エポキシ系樹脂、エポキシ−ウレタン系樹脂、及びイソシアネート系樹脂、シアノアクリレート系樹脂からなる群から選ばれた少なくとも１種の樹脂からなる接着剤を塗布して貼り合わせ、次いで、接着剤を硬化させることにより、固体撮像ウエハと透明基板との間の距離を固定する接着層を形成する貼り合せ工程、前記貼り合せ工程の後、前記固体撮像素子ウエハの裏面を研磨し、５０μｍ〜１００μｍの厚さにする工程、及び前記研磨工程の後、前記接着層において、個々の固体撮像素子ごとに切断し、切断された接着層により固体撮像素子と透明板の間の空隙の周縁が封止された固体撮像装置を得る工程を具備し、前記固体撮像素子ウエハの裏面の研磨時に加わる力による固体撮像ウエハと透明基板との横すべりに耐えるように、前記接着層は２００μｍ以上、１０００μｍ以下の幅を有することを特徴とする固体撮像装置の製造方法を提供する。 The first aspect of the present invention is a solid-state image sensor having a thickness of 50 μm to 100 μm and having a plurality of microlenses arranged on the light-receiving surface, and a transparent material disposed facing the light-receiving surface of the solid-state image sensor In order to maintain a constant distance between the plate, the solid-state image sensor and the transparent plate, a spacer arranged in a frame shape around the light receiving surface of the solid-state image sensor, the solid-state image sensor outside the spacer, and In a method for manufacturing a solid-state imaging device comprising an adhesive layer that seals a gap between transparent plates, a solid-state imaging device wafer and a transparent substrate provided with a plurality of solid-state imaging devices each having a plurality of microlenses arranged on a light receiving surface And an epoxy-based resin, an epoxy-urethane-based resin provided outside the spacer of each solid-state image sensor, with a spacer interposed in the periphery of each solid-state image sensor, and Isocyanate resins, bonded by applying an adhesive comprising at least one resin selected from the group consisting of cyanoacrylate resin, followed by curing the adhesive, between the solid-state imaging wafer and the transparent substrate Bonding step for forming an adhesive layer for fixing the distance of the step , after the bonding step , polishing the back surface of the solid-state imaging device wafer to a thickness of 50 μm to 100 μm, and after the polishing step, in the adhesive layer, comprising the step of obtaining the individual solid was cut for each imaging element, the solid-state imaging device periphery of the gap of the solid-state imaging device and a transparent plates were sealed with cut adhesive layer, wherein the solid-state imaging device wafer to withstand the in side slip of the rear surface solid-state imaging wafer and the transparent substrate by the force applied during the polishing of the adhesive layer is 200μm or more, having a width of not more than 1000μm To provide a method of manufacturing a solid-state imaging device, characterized in that.
本発明によると、固体撮像素子と透明板とを接着する接着層の幅を２００μｍ以上にすることにより、固体撮像装置の製造工程において複数の固体撮像素子が設けられた固体撮像素子ウエハの裏面を研磨する際に、横すべり力に充分に耐えることができ、装置の薄型化が可能となる。 According to the present invention, the width of the adhesive layer that bonds the solid-state imaging device and the transparent plate is 200 μm or more, so that the back surface of the solid-state imaging device wafer provided with a plurality of solid-state imaging devices is manufactured in the manufacturing process of the solid-state imaging device. When polishing, it can sufficiently withstand a lateral sliding force, and the apparatus can be made thinner.
以下、本発明の実施形態について説明する。 Hereinafter, embodiments of the present invention will be described.
図１は、本発明の一実施形態に係る固体撮像装置を示す断面図である。図１において、固体撮像素子チップ１の上面（受光面）には、複数のマイクロレンズ２が設けられており、これらマイクロレンズ２に対向して、透明板、即ち赤外カット透明ガラス板３が配置されている。なお、固体撮像素子チップ１としては、ＣＣＤやＣＭＯＳセンサを用いることができる。固体撮像素子チップ１の厚さは、例えば、５０μｍ〜１００μｍであるのが好ましい。薄すぎると強度的に問題が生じ、厚すぎると、薄型機器への組み込みが困難となる。
FIG. 1 is a cross-sectional view showing a solid-state imaging device according to an embodiment of the present invention. In FIG. 1, a plurality of
固体撮像素子チップ１と赤外カット透明ガラス板３の間には、枠状のスペーサ４が介在しており、両者の間隔を一定に保持している。また、スペーサ４の外側の固体撮像素子チップ１と赤外カット透明ガラス板３の間隙は、例えば紫外線硬化性樹脂を硬化させてなる接着層５により封止されている。
A frame-
接着層５を構成する材料としては、例えば、エポキシ系樹脂、エポキシ−ウレタン系樹脂、及びイソシアネート系樹脂、シアノアクリレート系樹脂を挙げることができる。これらは、増感剤を含むモノマーからなる接着剤に紫外線を照射して重合することにより得ることができる。
Examples of the material constituting the
この接着剤層５の幅は、２００μｍ以上である。２００μｍ未満では、固体撮像装置の強度が不十分となる。特に、固体撮像装置の製造工程において、固体撮像素子ウエハと透明基板の貼り合せた構造のウエハ裏面を研磨する際に、横すべり力に充分に耐えることができない。即ち、透明基板側を保持してウエハ裏面の研磨を行う場合に、ウエハと透明基板とがずれてしまう。
The width of the
なお、接着剤層５の幅の上限は、１０００μｍである。
In addition, the upper limit of the width | variety of the
固体撮像素子チップ１の上面周辺部には、固体撮像素子の配線電極９が設けられ、また、底面周辺部には裏面電極（図示せず）が設けられており、これら配線電極９及び裏面電極を接続するために、固体撮像素子チップ１の側面を通って底面周辺部に延びる側壁周り配線層６が形成されている。また、固体撮像素子チップ１の底面周辺部における側壁周り配線層６の部分には、外部接続用バンプ７が形成されている。
このような構造の側部及び底部は、ソルダーレジストからなる絶縁層８により被覆されている。
The side part and the bottom part of such a structure are covered with an
以上のように構成される固体撮像装置は、次のような製造プロセスにより製造される。 The solid-state imaging device configured as described above is manufactured by the following manufacturing process.
即ち、まず、複数の固体撮像素子チップが設けられ、その上面に複数のマイクロレンズが形成された固体撮像素子ウエハ１１と、このウエハ１１と同程度のサイズの透明ガラス基板１２を準備する。次いで、これら固体撮像素子ウエハ１１と透明ガラス基板１２とを、その間に個々の固体撮像素子チップごとにその周辺を囲むように枠状のスペーサ１３を介在させて、スペーサ１３の外側に例えば増感剤を含むモノマーからなる接着剤を塗布して貼り合せる。
That is, first, a solid-state
次いで、紫外線を照射して接着剤を硬化させることにより、固体撮像素子ウエハ１１と透明基板１２との間の距離は接着層１４により固定される。この状態の構造を図２に示す。
Then, the distance between the solid-state imaging device wafer 11 and the
なお、接着層１４の幅は、個々の固体撮像素子チップごとに切断された状態で２００μｍ以上になるようにされる。
The width of the
その後、図２に示すように、貼り合された構造の固体撮像素子ウエハ１１の裏面を研磨する。この研磨により、０．５ｍｍ程度の厚さの固体撮像素子ウエハ１１が、５０〜１００μｍ程度の厚さに薄くされる。 Then, as shown in FIG. 2, the back surface of the solid-state imaging device wafer 11 having a bonded structure is polished. By this polishing, the solid-state imaging device wafer 11 having a thickness of about 0.5 mm is thinned to a thickness of about 50 to 100 μm.
この研磨の際には、接着層１４の幅が、個々の固体撮像素子チップごとに切断された状態で２００μｍ以上になるように広く形成されているので、加わる横すべり力に充分に耐えることができ、固体撮像素子ウエハ１１と透明ガラス基板１２の位置関係がずれることがない。
At the time of this polishing, since the width of the
次に、図３に示すように、接着層１４の切断個所Ａの位置で、固体撮像素子チップごとに、ダイシング装置により切断する。なお、図３において、参照符号１５は、外部に接続される配線電極を示す。
Next, as shown in FIG. 3, the solid-state image pickup device chip is cut by a dicing device at the position of the cutting portion A of the
その後、図４に示すように、側壁周り配線層６及びソルダーレジストからなる絶縁層８を形成し、絶縁層８に形成された孔を通して外部接続用バンプ７を形成することにより、図１に示すような１つの固体撮像素子チップを備える固体撮像素子が製造される。
Thereafter, as shown in FIG. 4, the wiring layer 6 around the side wall and the
以上説明した固体撮像装置の製造プロセスによると、複数の固体撮像素子チップが設けられた固体撮像素子ウエハ１１と透明ガラス基板１２とが、幅の広い接着層１４により強固に張り合せ・固定されているので、その後の固体撮像素子ウエハ１１の裏面の研磨の際に構造に加わる横すべり力に充分に耐えることができ、固体撮像素子ウエハ１１を充分に薄くすることができる。また、それにより固体撮像装置の薄型化が達成され、その結果、携帯電子機器への組み込みを容易に行うことが可能となる。
According to the manufacturing process of the solid-state imaging device described above, the solid-state imaging device wafer 11 provided with a plurality of solid-state imaging device chips and the
１…固体撮像素子チップ、２…マイクロレンズ、３…赤外カット透明ガラス板、４，１３…スペーサ、５，１４…接着層、６…側壁周り配線層、７…外部接続用バンプ、８…絶縁層、９，１５…配線電極、１１…固体撮像素子ウエハ、１２…透明基板。 DESCRIPTION OF SYMBOLS 1 ... Solid-state image sensor chip, 2 ... Micro lens, 3 ... Infrared cut transparent glass plate, 4, 13 ... Spacer, 5, 14 ... Adhesion layer, 6 ... Wiring layer around a side wall, 7 ... Bump for external connection, 8 ... Insulating layer, 9, 15... Wiring electrode, 11... Solid imaging device wafer, 12.
Claims (1)
受光面にそれぞれ複数のマイクロレンズが配置された複数の固体撮像素子が設けられた固体撮像素子ウエハと透明基板とを、個々の固体撮像素子の周辺部にスペーサを介在させた状態で、個々の固体撮像素子のスペーサの外側に設けられた、エポキシ系樹脂、エポキシ−ウレタン系樹脂、及びイソシアネート系樹脂、シアノアクリレート系樹脂からなる群から選ばれた少なくとも１種の樹脂からなる接着剤を塗布して貼り合わせ、次いで、接着剤を硬化させることにより、固体撮像ウエハと透明基板との間の距離を固定する接着層を形成する貼り合せ工程、
前記貼り合せ工程の後、前記固体撮像素子ウエハの裏面を研磨し、５０μｍ〜１００μｍの厚さにする工程、及び
前記研磨工程の後、前記接着層において、個々の固体撮像素子ごとに切断し、切断された接着層により固体撮像素子と透明板の間の空隙の周縁が封止された固体撮像装置を得る工程
を具備し、
前記固体撮像素子ウエハの裏面の研磨時に加わる力による固体撮像ウエハと透明基板との横すべりに耐えるように、前記接着層は２００μｍ以上、１０００μｍ以下の幅を有することを特徴とする固体撮像装置の製造方法。 A solid-state imaging device having a thickness of 50 μm to 100 μm and having a plurality of microlenses disposed on the light-receiving surface, a transparent plate disposed to face the light-receiving surface of the solid-state imaging device, the solid-state imaging device, and the transparent In order to keep the distance between the plates constant, a spacer arranged in a frame shape around the light receiving surface of the solid-state imaging device and an adhesive that seals a gap between the solid-state imaging device outside the spacer and the transparent plate In a method for manufacturing a solid-state imaging device comprising a layer,
A solid-state imaging device wafer provided with a plurality of solid-state imaging devices each having a plurality of microlenses arranged on the light-receiving surface and a transparent substrate, with a spacer interposed in the periphery of each solid-state imaging device, Apply an adhesive made of at least one resin selected from the group consisting of an epoxy resin, an epoxy-urethane resin, an isocyanate resin, and a cyanoacrylate resin, which is provided outside the spacer of the solid-state imaging device. Bonding, and then bonding step to form an adhesive layer that fixes the distance between the solid-state imaging wafer and the transparent substrate by curing the adhesive,
After the bonding step , the back surface of the solid-state imaging device wafer is polished to a thickness of 50 μm to 100 μm, and after the polishing step, the adhesive layer is cut into individual solid-state imaging devices , Comprising the step of obtaining a solid-state imaging device in which the periphery of the gap between the solid-state imaging element and the transparent plate is sealed by the cut adhesive layer ;
The solid to withstand the side slip of the imaging element backside solid-state imaging wafer and the transparent substrate by the force applied during the polishing of the wafer, the adhesive layer is 200μm or more, the production of the solid-state imaging apparatus characterized by having the following widths 1000μm Method.
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