JP2008106326A5 - - Google Patents
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- JP2008106326A5 JP2008106326A5 JP2006291649A JP2006291649A JP2008106326A5 JP 2008106326 A5 JP2008106326 A5 JP 2008106326A5 JP 2006291649 A JP2006291649 A JP 2006291649A JP 2006291649 A JP2006291649 A JP 2006291649A JP 2008106326 A5 JP2008106326 A5 JP 2008106326A5
- Authority
- JP
- Japan
- Prior art keywords
- concentration
- acid concentration
- absorptiometer
- etching solution
- calculated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- QTBSBXVTEAMEQO-UHFFFAOYSA-N acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 6
- NBIIXXVUZAFLBC-UHFFFAOYSA-N phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 238000000491 multivariate analysis Methods 0.000 description 1
- 238000000611 regression analysis Methods 0.000 description 1
Description
多成分演算器３３は、導電率計１５、吸光光度計１６、及び、吸光光度計１７から入力される導電率、各吸光度から、多成分演算法（重回帰分析法・多変量解析法）によりさらに正確なエッチング液の成分濃度（硝酸濃度、水分濃度、及び、燐酸濃度）を演算し、さらに、この演算された硝酸濃度、水分濃度、及び、燐酸濃度を、１００％から差し引くことにより酢酸濃度を算出し、これらの各濃度が予め定められた目標値（例えば酢酸濃度については目標値１０.０±１.０％）となるように、流量調節弁２４、２５、２７のうちの少なくとも１つの流量調整弁を開くように制御する。 The multi-component calculator 33 is obtained from the conductivity input from the conductivity meter 15, the absorptiometer 16, and the absorptiometer 17 and the respective absorbances by a multi-component arithmetic method (multiple regression analysis method / multivariate analysis method). Further, the concentration of the etching solution (nitric acid concentration, water concentration, and phosphoric acid concentration) is calculated, and the calculated nitric acid concentration, water concentration, and phosphoric acid concentration are subtracted from the 100% acetic acid concentration. calculates, these target values each concentration is predetermined (e.g., the target value 10.0 ± 1.0% for acetic acid concentrations) so that, at least one of the flow control valve 24, 25, 27 Control to open one flow control valve.
上記各実施形態のエッチング液管理装置によれば、さらに、次の効果を奏する。 According to the etching solution control apparatus of the upper Symbol embodiments, further, the following effect.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006291649A JP5058560B2 (en) | 2006-10-26 | 2006-10-26 | Etching solution management device |
| KR20070084987A KR101248213B1 (en) | 2006-10-26 | 2007-08-23 | Etchant managing device |
| CN2007101485743A CN101170063B (en) | 2006-10-26 | 2007-08-29 | Etching liquid management device |
| TW96132279A TWI435384B (en) | 2006-10-26 | 2007-08-30 | Etching fluid management device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006291649A JP5058560B2 (en) | 2006-10-26 | 2006-10-26 | Etching solution management device |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012028738A Division JP5522860B2 (en) | 2012-02-13 | 2012-02-13 | Etching solution management device |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008106326A JP2008106326A (en) | 2008-05-08 |
| JP2008106326A5 true JP2008106326A5 (en) | 2009-10-08 |
| JP5058560B2 JP5058560B2 (en) | 2012-10-24 |
Family
ID=39390626
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006291649A Expired - Fee Related JP5058560B2 (en) | 2006-10-26 | 2006-10-26 | Etching solution management device |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP5058560B2 (en) |
| KR (1) | KR101248213B1 (en) |
| CN (1) | CN101170063B (en) |
| TW (1) | TWI435384B (en) |
Families Citing this family (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5405042B2 (en) | 2008-04-22 | 2014-02-05 | 株式会社平間理化研究所 | Etching solution preparation device and etching solution concentration measuring device |
| CN101538715B (en) * | 2009-04-15 | 2011-01-12 | 苏州市飞莱克斯电路电子有限公司 | Flexible circuit board etching liquid concentration control device |
| JP2013519098A (en) * | 2010-02-12 | 2013-05-23 | レナ ゲーエムベーハー | Method for measuring nitric acid concentration |
| JP2012167959A (en) * | 2011-02-10 | 2012-09-06 | Toyota Motor Corp | Paste evaluation device, paste evaluation method, and method for manufacturing electrode plate |
| CN102534621B (en) * | 2012-02-21 | 2013-11-13 | 上海正帆科技有限公司 | Method for treating acidic etching solution |
| CN103699143B (en) * | 2012-09-27 | 2018-05-18 | 盛美半导体设备（上海）有限公司 | The system and method that polishing fluid concentration is controlled to stablize |
| CN102981523A (en) * | 2012-11-14 | 2013-03-20 | 杭州格林达化学有限公司 | Online determination and control method for concentrations of various acids in aluminum etching solution |
| JP6112450B2 (en) * | 2013-01-30 | 2017-04-12 | パナソニックＩｐマネジメント株式会社 | Etching solution component concentration measuring device and etching solution management device |
| CN103359950A (en) * | 2013-07-24 | 2013-10-23 | 惠晶显示科技（苏州）有限公司 | Multifunctional etching machine |
| CN103441090B (en) * | 2013-08-16 | 2016-03-09 | 江阴新顺微电子有限公司 | Be applicable to the single-face corrosion device of semiconductor chip |
| JP2015070080A (en) * | 2013-09-27 | 2015-04-13 | 東京エレクトロン株式会社 | Etching method, etching device and storage medium |
| CN104902688B (en) * | 2014-03-04 | 2018-09-07 | 宇宙电路板设备(深圳)有限公司 | A kind of etching solution adding method, apparatus and system |
| CN103926135B (en) * | 2014-05-09 | 2017-11-07 | 欧蒙医学诊断（中国）有限公司 | A kind of automatic dilution device and method |
| JP6284452B2 (en) * | 2014-07-17 | 2018-02-28 | 株式会社平間理化研究所 | Etching solution management apparatus, etching solution management method, and etching solution component concentration measuring method |
| KR20160010259A (en) * | 2014-07-17 | 2016-01-27 | 가부시키가이샤 히라마 리카 켄큐쇼 | Solid particle recovering and removing apparatus, liquid managing apparatus and etching solution managing apparatus |
| JP6721157B2 (en) * | 2015-07-22 | 2020-07-08 | 株式会社平間理化研究所 | Method and apparatus for measuring component concentration of developer, and method and apparatus for managing developer |
| KR101962080B1 (en) * | 2015-09-30 | 2019-03-25 | 시바우라 메카트로닉스 가부시끼가이샤 | Substrate processing apparatus and substrate processing method |
| CN105331976B (en) * | 2015-10-22 | 2017-10-27 | 博罗县东明化工有限公司 | A kind of device that nano aperture is prepared for aluminum alloy surface |
| CN105568285B (en) * | 2015-12-31 | 2018-04-13 | 东旭（昆山）显示材料有限公司 | Etaching device |
| JP6681066B2 (en) * | 2016-03-14 | 2020-04-15 | 株式会社平間理化研究所 | Aqueous resist stripper preparation device and non-aqueous resist stripper preparation device |
| WO2017169444A1 (en) * | 2016-03-30 | 2017-10-05 | 三井造船環境エンジニアリング株式会社 | Solution analysis system |
| JP6224152B2 (en) * | 2016-03-30 | 2017-11-01 | 三井造船環境エンジニアリング株式会社 | Solution analysis system |
| JP6224151B2 (en) * | 2016-03-30 | 2017-11-01 | 三井造船環境エンジニアリング株式会社 | Solution analysis system |
| CN105866049B (en) * | 2016-05-20 | 2019-04-26 | 深圳市华星光电技术有限公司 | Etching solution acid concentration measuring equipment |
| KR101723981B1 (en) * | 2016-06-21 | 2017-04-07 | (주)세미로드 | Apparatus for measuring and adjusting concentration of the slurry solution |
| CN106653659A (en) * | 2017-01-13 | 2017-05-10 | 京东方科技集团股份有限公司 | Wet etching system and method |
| JP6736087B2 (en) * | 2017-01-23 | 2020-08-05 | 株式会社平間理化研究所 | Developer concentration monitoring device and developer management device |
| CN109545721A (en) * | 2018-12-05 | 2019-03-29 | 西安奕斯伟硅片技术有限公司 | Control the method, control equipment and control system of silicon slice corrosion solution concentration |
| CN109659260A (en) * | 2018-12-17 | 2019-04-19 | 武汉华星光电半导体显示技术有限公司 | Etch liquid processing device |
| CN109923415B (en) * | 2019-01-24 | 2021-06-22 | 香港应用科技研究院有限公司 | System and method for determining concentration of substance in solution |
| US11340205B2 (en) | 2019-01-24 | 2022-05-24 | Hong Kong Applied Science And Technology Research Institute Co., Ltd. | Systems and methods for determining concentrations of materials in solutions |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0651914B2 (en) * | 1989-07-07 | 1994-07-06 | キヤノン株式会社 | Thin film etching equipment |
| JP3610858B2 (en) * | 2000-01-20 | 2005-01-19 | 住友金属工業株式会社 | Acid concentration meter and acid concentration measurement method |
| CN1327888A (en) * | 2000-06-09 | 2001-12-26 | 株式会社平间理化研究所 | Treater for substrate surface |
| JP4554037B2 (en) * | 2000-07-04 | 2010-09-29 | 東京エレクトロン株式会社 | Consumable consumption level prediction method and deposited film thickness prediction method |
| JP2004137519A (en) * | 2002-10-15 | 2004-05-13 | Nagase & Co Ltd | Method for controlling etching liquid, and apparatus for controlling etching liquid |
-
2006
- 2006-10-26 JP JP2006291649A patent/JP5058560B2/en not_active Expired - Fee Related
-
2007
- 2007-08-23 KR KR20070084987A patent/KR101248213B1/en active IP Right Grant
- 2007-08-29 CN CN2007101485743A patent/CN101170063B/en active Active
- 2007-08-30 TW TW96132279A patent/TWI435384B/en not_active IP Right Cessation
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