JP2008098510A - 不揮発性半導体記憶装置 - Google Patents
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- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
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- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
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- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
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Abstract
【解決手段】不揮発性半導体記憶装置1においては、半導体基板3の表面上に第1の絶縁膜5、電荷蓄積層6、第2の絶縁膜13、第3の絶縁膜14、第4の絶縁膜15、制御ゲート17が設けられている。第2および第4の各絶縁膜13,15はシリコンおよび窒素を含む。第3の絶縁膜14は酸素を含む単層の絶縁膜あるいは最上層および最下層の各膜が酸素を含む複数層の積層絶縁膜からなり、かつ、前記単層絶縁膜および前記積層絶縁膜の比誘電率がシリコン酸化膜の比誘電率よりも大きい。電荷蓄積層6と第2の絶縁膜13および第4の絶縁膜15と制御ゲート17との少なくとも一方の間にシリコンおよび酸素を含む第5の絶縁膜16が設けられている。
【選択図】 図9
Description
先ず、本発明に係る第1実施形態について図1〜図10を参照しつつ説明する。図1は、本実施形態に係る不揮発性半導体記憶装置のメモリーセルアレイ部の構造を簡略化して示す平面図である。図2は、図1に示す不揮発性半導体記憶装置のメモリーセルアレイ部の回路構成を簡略化して示す図である。図3〜図9は、それぞれ図1に示す不揮発性半導体記憶装置の製造工程を示す断面図である。図10は、図1に示す不揮発性半導体記憶装置が備える電極間絶縁膜の最上層のシリコン酸化膜の膜厚に対するバーズビーク生成量および電荷保持特性の依存性をグラフにして示す図である。
次に、本発明に係る第2実施形態について図11および図12を参照しつつ説明する。図11および図12は、それぞれ本実施形態に係る不揮発性半導体記憶装置の製造工程を示す断面図である。なお、前述した第1実施形態と同一部分には同一符号を付して、それらの詳しい説明を省略する。
次に、本発明に係る第3実施形態について図13および図14を参照しつつ説明する。図13および図14は、それぞれ本実施形態に係る不揮発性半導体記憶装置の製造工程を示す断面図である。なお、前述した第1および第2の各実施形態と同一部分には同一符号を付して、それらの詳しい説明を省略する。
次に、本発明に係る第4実施形態について図15〜図19を参照しつつ説明する。図15および図16は、それぞれ本実施形態に係る不揮発性半導体記憶装置の製造工程を示す断面図である。なお、前述した第1〜第3の各実施形態と同一部分には同一符号を付して、それらの詳しい説明を省略する。
次に、本発明に係る第5実施形態について図20および図21を参照しつつ説明する。図20および図21は、それぞれ本実施形態に係る不揮発性半導体記憶装置の製造工程を示す断面図である。なお、前述した第1〜第4の各実施形態と同一部分には同一符号を付して、それらの詳しい説明を省略する。
Claims (5)
- 半導体基板の表面上に設けられた第1の絶縁膜と、
この第1の絶縁膜上に設けられた電荷蓄積層と、
この電荷蓄積層の上方に設けられているとともにシリコンおよび窒素を含む第2の絶縁膜と、
この第2の絶縁膜上に設けられているとともに、酸素を含む単層の絶縁膜あるいは少なくとも最上層および最下層の各膜が酸素を含む複数層の積層絶縁膜からなり、かつ、前記単層絶縁膜および前記積層絶縁膜の比誘電率がシリコン酸化膜の比誘電率よりも大きい第3の絶縁膜と、
この第3の絶縁膜上に設けられているとともにシリコンおよび窒素を含む第4の絶縁膜と、
この第4の絶縁膜の上方に設けられた制御ゲートと、
を具備してなり、前記電荷蓄積層と前記第2の絶縁膜との間および前記第4の絶縁膜と前記制御ゲートとの間の少なくとも一方の間にシリコンおよび酸素を含む第5の絶縁膜が設けられていることを特徴とする不揮発性半導体記憶装置。 - 前記第5の絶縁膜の膜厚が0.3〜2.3nmであることを特徴とする請求項1に記載の不揮発性半導体記憶装置。
- 半導体基板の表面上に設けられた第1の絶縁膜と、
この第1の絶縁膜上に設けられた電荷蓄積層と、
この電荷蓄積層の上方に設けられているとともにシリコンおよび窒素を含む第2の絶縁膜と、
この第2の絶縁膜上に設けられているとともに、酸素を含む単層の絶縁膜あるいは少なくとも最上層および最下層の各膜が酸素を含む複数層の積層絶縁膜からなり、かつ、前記単層絶縁膜および前記積層絶縁膜の比誘電率がシリコン酸化膜の比誘電率よりも大きい第3の絶縁膜と、
この第3の絶縁膜上に設けられているとともにシリコンおよび窒素を含む第4の絶縁膜と、
この第4の絶縁膜の上方に設けられた制御ゲートと、
を具備してなり、前記第2の絶縁膜および前記第4の絶縁膜中に不活性ガスが1×1017 atoms /cm3 以上含まれているか、あるいは前記第2の絶縁膜および前記第4の絶縁膜中の水素濃度が1×1016 〜1×1019 atoms /cm3 であるか、のいずれかであることを特徴とする不揮発性半導体記憶装置。 - 前記電荷蓄積層と前記第2の絶縁膜との間および前記第4の絶縁膜と前記制御ゲートとの間のいずれか一方の間にシリコンおよび酸素を含む第5の絶縁膜が設けられていることを特徴とする請求項3に記載の不揮発性半導体記憶装置。
- 前記第3の絶縁膜は、酸素を含む2層の絶縁膜の間にシリコン酸化膜よりも比誘電率の高い膜を挟んだ積層構造、あるいはハフニウム(Hf)、ジルコニウム(Zr)、タンタル(Ta)、イットリウム(Y)、アルミニウム(Al)、およびランタン(La)のうちの少なくとも一つの元素ならびに酸素を含む絶縁膜を有する単層構造または積層構造からなることを特徴とする請求項1〜4のうちのいずれかに記載の不揮発性半導体記憶装置。
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JP2006280410A JP2008098510A (ja) | 2006-10-13 | 2006-10-13 | 不揮発性半導体記憶装置 |
US11/870,793 US7414285B2 (en) | 2006-10-13 | 2007-10-11 | Nonvolatile semiconductor memory device |
KR1020070103125A KR100906526B1 (ko) | 2006-10-13 | 2007-10-12 | 불휘발성 반도체 기억 장치 |
US12/176,559 US7651914B2 (en) | 2006-10-13 | 2008-07-21 | Manufacturing method of a nonvolatile semiconductor memory device |
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Also Published As
Publication number | Publication date |
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KR100906526B1 (ko) | 2009-07-07 |
US20090011586A1 (en) | 2009-01-08 |
US7414285B2 (en) | 2008-08-19 |
US7651914B2 (en) | 2010-01-26 |
KR20080033888A (ko) | 2008-04-17 |
US20080087937A1 (en) | 2008-04-17 |
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