JP2008060273A - トンネル型磁気検出素子およびその製造方法 - Google Patents
トンネル型磁気検出素子およびその製造方法 Download PDFInfo
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- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
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- H01F10/3272—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets
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Abstract
フリー磁性層の磁歪の増大が低く、かつ抵抗変化率の高いトンネル型磁気検出素子を得る。
【解決手段】
下から、磁化方向が一方向に固定される固定磁性層、絶縁障壁層、及び外部磁界により磁化方向が変動するフリー磁性層の順で積層されるトンネル型磁気検出素子において、前記フリー磁性層上にマグネシウム(Mg)で形成された第1保護層が形成される。これにより、第1保護層が形成されない従来構造、あるいは第1保護層をAl、Ti、Cu、IrMnで形成した構造に比べて、フリー磁性層の磁歪が低く、かつ高い抵抗変化率を示す。
【選択図】図1
Description
下から、磁化方向が一方向に固定される固定磁性層、絶縁障壁層、及び外部磁界により磁化方向が変動するフリー磁性層の順で積層され、
前記フリー磁性層上にマグネシウム(Mg)で形成された第1保護層が形成されることを特徴とするものである。
また本発明では、前記第1保護層は、前記第2保護層より膜厚が薄いことが好ましい。
(b) 前記金属層あるいは半導体層を酸化して、絶縁障壁層を形成する工程、
(c) 前記絶縁障壁層上に、フリー磁性層を形成する工程、
(d) 前記フリー磁性層上に、マグネシウム(Mg)で形成された第1保護層を形成する工程。
また、前記(d)工程の後、アニール処理を行うことが好ましい。
前記フリー磁性層6上には保護層7が形成されている。
前記絶縁障壁層5がAl―Oであるトンネル型磁気検出素子を以下のように作成した。
抵抗変化率(ΔR/R)およびフリー磁性層6の磁歪λを測定した結果を、表1に示す。また、フリー磁性層の保磁力(Hc)および固定磁性層との層間結合磁界(Hin)の測定結果も合わせて示す。
前記積層体T1を形成した後、270℃で3時間30分、アニール処理を行った。
4 固定磁性層
4a 第1固定磁性層
4b 非磁性中間層
4c 第2固定磁性層
5 絶縁障壁層
6a エンハンス層
6b 軟磁性層
6 フリー磁性層
7a 第1保護層
7b 第2保護層
7 保護層
15 金属層
21 下部シールド層
22,24 絶縁層
23 ハードバイアス層
26 上部シールド層
Claims (12)
- 下から、磁化方向が一方向に固定される固定磁性層、絶縁障壁層、及び外部磁界により磁化方向が変動するフリー磁性層の順で積層され、
前記フリー磁性層上にマグネシウム(Mg)で形成された第1保護層が形成されることを特徴とするトンネル型磁気検出素子。 - 前記第1保護層と前記フリー磁性層との界面では構成元素の相互拡散が生じ、マグネシウム濃度が前記第1保護層の内部から前記フリー磁性層の前記絶縁障壁層との界面方向に向けて徐々に減少する濃度勾配が形成される請求項1記載のトンネル型磁気検出素子。
- 前記第1保護層上にタンタル(Ta)からなる第2保護層が形成されている請求項1または2に記載のトンネル型磁気検出素子。
- 前記第1保護層と前記第2保護層との界面では構成元素の相互拡散が生じ、マグネシウム濃度が前記第1保護層の内部から前記第2保護層の上面方向に向けて徐々に減少する濃度勾配が形成される請求項3記載のトンネル型磁気検出素子。
- 前記第1保護層は、前記第2保護層より膜厚が薄い請求項3記載のトンネル型磁気検出素子。
- 前記フリー磁性層は、下からCoFe合金で形成されたエンハンス層及びNiFe合金で形成された軟磁性層の順に積層され、前記エンハンス層は前記絶縁障壁層に接して形成され、前記軟磁性層は前記第1保護層に接して形成されている請求項1ないし5のいずれかに記載のトンネル型磁気検出素子。
- 前記絶縁障壁層は酸化アルミニウム(Al−O)で形成されている請求項1ないし6のいずれかに記載のトンネル型磁気検出素子。
- 前記絶縁障壁層は酸化チタン(Ti−O)で形成されている請求項1ないし6のいずれかに記載のトンネル型磁気検出素子。
- 以下の工程を有することを特徴とするトンネル型磁気検出素子の製造方法。
(a) 固定磁性層を形成し、前記固定磁性層上に金属層あるいは半導体層を形成する工程、
(b) 前記金属層あるいは半導体層を酸化して、絶縁障壁層を形成する工程、
(c) 前記絶縁障壁層上に、フリー磁性層を形成する工程、
(d) 前記フリー磁性層上に、マグネシウム(Mg)で形成された第1保護層を形成する工程。 - 前記(d)工程は、前記第1保護層を形成した後、前記第1保護層上にタンタル(Ta)から成る第2保護層を形成する工程とする請求項9記載のトンネル型磁気検出素子の製造方法。
- 前記第1保護層の膜厚を、前記第2保護層の膜厚より薄く形成する請求項10記載のトンネル型磁気検出素子の製造方法。
- 前記(d)工程の後、アニール処理を行う請求項9ないし11のいずれかに記載のトンネル型磁気検出素子の製造方法。
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JP2006234464A JP4862564B2 (ja) | 2006-08-30 | 2006-08-30 | トンネル型磁気検出素子およびその製造方法 |
US11/888,762 US7933100B2 (en) | 2006-08-30 | 2007-08-02 | Tunneling magnetic sensor including free magnetic layer and magnesium protective layer disposed thereon |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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US8254067B2 (en) | 2008-10-27 | 2012-08-28 | Hitachi Global Storage Technologies Netherlands B.V. | Tunnel junction type magneto-resistive head |
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JP2008066640A (ja) * | 2006-09-11 | 2008-03-21 | Alps Electric Co Ltd | トンネル型磁気検出素子およびその製造方法 |
JP2008166532A (ja) * | 2006-12-28 | 2008-07-17 | Tdk Corp | トンネル型磁気検出素子及びその製造方法 |
US7940494B2 (en) * | 2007-01-16 | 2011-05-10 | Tdk Corporation | Magnetic recording medium, magnetic recording and reproducing apparatus, and method for manufacturing magnetic recording medium |
US9054030B2 (en) | 2012-06-19 | 2015-06-09 | Micron Technology, Inc. | Memory cells, semiconductor device structures, memory systems, and methods of fabrication |
KR102078849B1 (ko) * | 2013-03-11 | 2020-02-18 | 삼성전자 주식회사 | 자기저항 구조체, 이를 포함하는 자기 메모리 소자 및 자기저항 구조체의 제조 방법 |
US9263068B1 (en) | 2014-11-05 | 2016-02-16 | International Business Machines Corporation | Magnetic read head having a CPP MR sensor electrically isolated from a top shield |
US9280991B1 (en) | 2015-01-07 | 2016-03-08 | International Business Machines Corporation | TMR head design with insulative layers for shorting mitigation |
KR20170037707A (ko) * | 2015-09-25 | 2017-04-05 | 삼성전자주식회사 | 자기 기억 소자 및 이의 제조 방법 |
KR102437781B1 (ko) | 2015-12-10 | 2022-08-30 | 삼성전자주식회사 | 자기 메모리 장치 및 그 제조 방법 |
US9607635B1 (en) | 2016-04-22 | 2017-03-28 | International Business Machines Corporation | Current perpendicular-to-plane sensors having hard spacers |
JP2020068214A (ja) | 2017-02-28 | 2020-04-30 | Tdk株式会社 | 強磁性多層膜、磁気抵抗効果素子、及び強磁性多層膜を製造する方法 |
US9947348B1 (en) | 2017-02-28 | 2018-04-17 | International Business Machines Corporation | Tunnel magnetoresistive sensor having leads supporting three-dimensional current flow |
US11489109B2 (en) | 2017-02-28 | 2022-11-01 | Tdk Corporation | Magnetoresistive effect element and magnetic memory |
US9997180B1 (en) | 2017-03-22 | 2018-06-12 | International Business Machines Corporation | Hybrid dielectric gap liner and magnetic shield liner |
US10803889B2 (en) | 2019-02-21 | 2020-10-13 | International Business Machines Corporation | Apparatus with data reader sensors more recessed than servo reader sensor |
US11522126B2 (en) * | 2019-10-14 | 2022-12-06 | Applied Materials, Inc. | Magnetic tunnel junctions with protection layers |
US11074930B1 (en) | 2020-05-11 | 2021-07-27 | International Business Machines Corporation | Read transducer structure having an embedded wear layer between thin and thick shield portions |
US11114117B1 (en) | 2020-05-20 | 2021-09-07 | International Business Machines Corporation | Process for manufacturing magnetic head having a servo read transducer structure with dielectric gap liner and a data read transducer structure with an embedded wear layer between thin and thick shield portions |
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JP2006165059A (ja) * | 2004-12-02 | 2006-06-22 | Sony Corp | 記憶素子及びメモリ |
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JP2007273493A (ja) * | 2006-03-30 | 2007-10-18 | Fujitsu Ltd | 磁気メモリ装置及びその製造方法 |
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US8254067B2 (en) | 2008-10-27 | 2012-08-28 | Hitachi Global Storage Technologies Netherlands B.V. | Tunnel junction type magneto-resistive head |
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