JP2008007798A - Plasma-generating device - Google Patents
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Abstract
Description
本発明は、装置の真空内部に配置した電極に電圧を直接または間接に印加してプラズマを発生するプラズマ発生装置に関するものである。 The present invention relates to a plasma generating apparatus that generates plasma by applying a voltage directly or indirectly to an electrode disposed inside a vacuum of the apparatus.
従来のプラズマ発生装置では、装置内部に平行に一対の平板電極を配置し、これら両平板電極間に電圧を印加することにより成膜用プラズマを発生するようになっている。上記構成のプラズマ発生装置を用いて、装置の真空内部に炭素膜成膜ガスを導入し両平板電極間に直流電圧を印加することにより当該両平板電極間に成膜用プラズマを励起させ、そしてこの成膜用プラズマ中に成膜対象物を配置することにより、この成膜対象物の表面に所要の成膜を施す成膜装置がある。 In a conventional plasma generator, a pair of plate electrodes are arranged in parallel inside the device, and a film forming plasma is generated by applying a voltage between the two plate electrodes. Using the plasma generator configured as described above, a carbon film forming gas is introduced into the vacuum of the apparatus, and a DC voltage is applied between the two plate electrodes to excite the plasma for film formation between the two plate electrodes, and There is a film forming apparatus that deposits a film forming object in the film forming plasma to perform a required film forming on the surface of the film forming object.
そして、この成膜装置により、成膜対象物全体に高品質に成膜させる上では、成膜用プラズマを導体ワイヤ全体に均等な密度でかつ高密度で発生させることが必要である。 In order to form a film with high quality on the entire object to be deposited with this film forming apparatus, it is necessary to generate plasma for film formation on the entire conductor wire with a uniform density.
しかしながら、上記プラズマ発生装置では、両平板電極間に発生する成膜用プラズマは電極面上でドーム形状に発生して電極端部側と電極中央側とで成膜用プラズマ密度が異なり、また、電極が対向しているだけであるから成膜用プラズマが周囲に漏洩しやすく、高密度な成膜用プラズマを得難いために、成膜対象物の表面全体に均等な膜厚でかつ高品質に成膜を施すことはできなかった。 However, in the above plasma generator, the film-forming plasma generated between the two plate electrodes is generated in a dome shape on the electrode surface, and the film-forming plasma density differs between the electrode end side and the electrode center side, Since the electrodes are only facing each other, the film-forming plasma is likely to leak to the surroundings, and it is difficult to obtain a high-density film-forming plasma. A film could not be formed.
加えて、複数の成膜対象物を両平板電極間に配置した場合では、これら複数の成膜対象物それぞれの全体に同等に成膜用プラズマを均等な密度でかつ高密度で発生させて、いずれの成膜対象物にも均等な膜厚でかつ高品質に成膜することは難しい。 In addition, in the case where a plurality of film formation objects are arranged between both plate electrodes, the film formation plasma is generated at an equal density and a high density equally to each of the plurality of film formation objects, It is difficult to form a high quality film with a uniform film thickness on any film formation target.
そのため、両平板電極間に成膜対象物を多数配置し、これら成膜対象物に一度に成膜して成膜対象物を量産することはできなかった。
本発明が解決しようとする課題は、装置内部に配置した成膜対象物の全体に均等にかつ高密度にプラズマを発生可能にして該成膜対象物の表面に高品質に成膜することを可能としたプラズマ発生装置を提供することである。 The problem to be solved by the present invention is to form a high-quality film on the surface of the film formation target by making it possible to generate plasma uniformly and at a high density over the entire film formation target disposed inside the apparatus. It is an object of the present invention to provide a plasma generator that can be used.
本発明に係るプラズマ発生装置は、装置の真空内部に直流電圧の印加により内部にプラズマを閉じ込めた状態にして発生させる筒状電極を複数個並設したことを特徴とするものである。 The plasma generator according to the present invention is characterized in that a plurality of cylindrical electrodes that are generated in a state where plasma is confined by applying a DC voltage inside the vacuum of the apparatus are arranged in parallel.
本発明によると、装置内部に配置した複数の筒状電極それぞれの内部にプラズマを漏洩させることなく均等な密度でかつ高密度に閉じ込めることができるようになる。 According to the present invention, the plasma can be confined at a uniform density without leaking into each of the plurality of cylindrical electrodes arranged inside the apparatus.
その結果、これら各筒状電極内部それぞれに例えば成膜対象物を配置し、上記プラズマを成膜用プラズマとして発生させるとともにその内部に成膜用ガスを導入することにより該成膜対象物の表面全体に均等な膜厚で高品質な膜を成膜させることができるとともに、複数の筒状電極の各内部に成膜対象物を配置することにより、複数の成膜対象物の表面に一度に膜を成膜してそれら成膜対象物を部品として組み込む製品においては当該部品を一挙に多数製造することができることになり、当該製品の量産化に大きく寄与することができるようになる。 As a result, for example, a film formation target is arranged inside each of these cylindrical electrodes, and the plasma is generated as a film formation plasma, and a film formation gas is introduced into the inside of the surface to form the surface of the film formation target. It is possible to form a high-quality film with a uniform film thickness on the whole, and by disposing a film formation object inside each of the plurality of cylindrical electrodes, the surface of the plurality of film formation objects can be formed at once. In a product in which a film is formed and these deposition objects are incorporated as parts, a large number of the parts can be manufactured all at once, which can greatly contribute to mass production of the product.
すなわち、本発明では、装置の真空内部のどの内部位置に筒状電極を配置してもその筒状電極内部に高密度にプラズマを発生することができるので高品質な膜を成膜するための成膜操作が容易であることに加えて、複数の筒状電極それぞれの内部のいずれに対しても上記プラズマを高密度に発生させることができるので、それら筒状電極内部それぞれに成膜対象物を配置し成膜用ガスを導入することによりそれら成膜対象物のいずれの表面にも均等な品質の膜を高品質に成膜することができるようになり、結果としてそれら成膜対象物を部品に用いる製品を量産することができる。 That is, in the present invention, plasma can be generated at a high density inside the cylindrical electrode no matter where the cylindrical electrode is arranged in the vacuum of the apparatus, so that a high quality film can be formed. In addition to the easy film forming operation, the plasma can be generated at a high density in each of the plurality of cylindrical electrodes. By introducing a film forming gas, it becomes possible to form a film of uniform quality on any surface of these film formation objects with high quality. Products used for parts can be mass-produced.
これに対して従来では一対の平行平板電極間にプラズマが発生しており、平行平板電極間の位置によってはプラズマの発生密度が変化しているので、複数の成膜対象物を両平行平板電極間に配置し成膜用ガスを導入して成膜対象物表面に成膜を施す場合、それら成膜対象物それぞれの表面に互いに均等な品質で膜を成膜することができない。 In contrast, conventionally, plasma is generated between a pair of parallel plate electrodes, and the plasma generation density varies depending on the position between the parallel plate electrodes. In the case where a film forming gas is introduced and a film forming gas is introduced to form a film on the surface of the film forming object, it is not possible to form films on each surface of the film forming object with equal quality.
なお、筒状電極は外周壁に開口を有することを必須としないが、開口を設けることにより、ガスが筒状電極内に流入しやすくなって好ましい。特に、成膜用ガスを導入して成膜対象物表面を成膜する場合では、筒状電極の外周壁をメッシュ状の壁構造とすれば、筒状電極内部に上記成膜用ガスがより効率的に流入させることができ、より低電力でプラズマを発生させて効率的な成膜が可能となって好ましい。 Note that the cylindrical electrode does not necessarily have an opening in the outer peripheral wall, but providing the opening is preferable because gas easily flows into the cylindrical electrode. In particular, in the case where a film forming gas is introduced to form a film formation target surface, if the outer peripheral wall of the cylindrical electrode has a mesh-like wall structure, the film forming gas is more contained in the cylindrical electrode. This is preferable because it can efficiently flow in, and plasma can be generated with lower power to enable efficient film formation.
上記筒状電極は上記プラズマを成膜用プラズマとし内部に成膜用ガスを導入することにより成膜対象物表面に成膜を施す場合は、内部に成膜対象物を配置することができる内径を有するものであればその形状に限定されず、円筒形でも角筒形でもよい。 The cylindrical electrode has an inner diameter that allows the film-forming object to be placed inside when the film is formed on the surface of the film-forming object by introducing the film-forming gas into the plasma. If it has, it will not be limited to the shape, A cylindrical shape or a rectangular tube shape may be sufficient.
上記筒状電極を並設する場合、それらを離隔して配置してもよいし、互いの外周面が接触した状態で配置してもよい。 When arranging the said cylindrical electrode in parallel, you may arrange | position them apart and may arrange | position in the state which the mutual outer peripheral surface contacted.
なお、上記プラズマ発生装置を成膜装置に利用する場合では、成膜対象物の形状や構造は何でもよく例えば基板や導体ワイヤ等を含む。成膜対象物は内部中実、内部中空の基板やワイヤであってもよいし、直線状や曲線状の基板やワイヤであってもよい。全体が導電部材から構成された基板やワイヤであってもよいし、内部が絶縁性線材の表面に導電部材を設けた基板やワイヤであってもよい。 When the plasma generating apparatus is used for a film forming apparatus, the shape and structure of the film forming target may be anything, and includes, for example, a substrate and a conductor wire. The film formation target may be an internal solid or internal hollow substrate or wire, or a linear or curved substrate or wire. The whole may be a substrate or a wire composed of a conductive member, or the inside may be a substrate or a wire provided with a conductive member on the surface of an insulating wire.
本発明によれば、装置の真空内部空間に複数の筒状電極を並設し、それぞれの筒状電極の内部にプラズマを高密度に閉じ込めた状態で発生させることができるので、各筒状電極それぞれの内部に例えば成膜対象物を配置し成膜用ガスを導入するとこれら複数の成膜対象物表面に一度に均等な膜厚でかつ高品質な膜を成膜することができることにより、当該成膜対象物を組み込む製品の量産化に貢献することができるようになる。 According to the present invention, a plurality of cylindrical electrodes can be arranged side by side in the vacuum internal space of the apparatus, and plasma can be generated in a state where each cylindrical electrode is confined in a high density. For example, when a film formation object is arranged inside each of the film formation objects and a film formation gas is introduced, a high-quality film having a uniform film thickness can be formed on the surfaces of the plurality of film formation objects at once. It becomes possible to contribute to mass production of a product incorporating a film formation target.
以下、添付した図面を参照して、本発明の実施の形態に係るプラズマ発生装置を説明する。実施の形態のプラズマ発生装置は成膜装置に組み込まれ、その成膜装置において成膜用プラズマを発生する装置として用いる例で説明するが、その発生するプラズマの用途は実施の形態に限定されない。 Hereinafter, a plasma generator according to an embodiment of the present invention will be described with reference to the accompanying drawings. Although the plasma generation apparatus of the embodiment is described as an example of being incorporated in a film formation apparatus and used as an apparatus for generating film formation plasma in the film formation apparatus, the use of the generated plasma is not limited to the embodiment.
図１に実施の形態のプラズマ発生装置が組み込まれる成膜装置を示す。図１を参照して、この成膜装置は、真空チャンバ２を備える。この真空チャンバ２の内部にガスボンベ４から成膜用プラズマ発生用の水素ガスと原料ガスである炭化水素ガスとが混合され、この混合ガスはガス圧力／流量調節回路６により圧力と流量とを調節されてその導入部２ａを通じて真空チャンバ２内に導入することができるようになっている。 FIG. 1 shows a film forming apparatus in which the plasma generator of the embodiment is incorporated. Referring to FIG. 1, this film forming apparatus includes a vacuum chamber 2. Inside the vacuum chamber 2, hydrogen gas for generating plasma for film formation and hydrocarbon gas, which is a raw material gas, are mixed from a gas cylinder 4, and the pressure and flow rate of the mixed gas are adjusted by a gas pressure / flow rate adjusting circuit 6. Then, it can be introduced into the vacuum chamber 2 through the introduction part 2a.
真空チャンバ２の排気部２ｂには排気制御弁（真空バルブ）８を介して真空排気系１０が接続されており、真空チャンバ２の内部圧力が調節される。原料ガスや成膜用プラズマ発生用ガスはこれに限定されるものではない。水素ガスに代えて窒素ガス、アルゴンガスを用いることができる。真空チャンバ２内は、真空排気系１０により排気制御弁８の開度制御の下で例えば１０Ｐａから１００００Ｐａの範囲の圧力に制御される。 A vacuum exhaust system 10 is connected to the exhaust part 2 b of the vacuum chamber 2 via an exhaust control valve (vacuum valve) 8, and the internal pressure of the vacuum chamber 2 is adjusted. The source gas and the film-forming plasma generating gas are not limited to these. Instead of hydrogen gas, nitrogen gas or argon gas can be used. The inside of the vacuum chamber 2 is controlled to a pressure in the range of, for example, 10 Pa to 10000 Pa under the opening control of the exhaust control valve 8 by the vacuum exhaust system 10.
真空チャンバ２内部には、プラズマ発生装置である複数のＳＵＳ等からなる筒状電極１２が互いの外周面が電気的に接触する状態でかつ並設されている。これら複数の筒状電極１２は金属製メッシュをほぼ円筒形に巻いて構成したものである。これら筒状電極１２の内部には成膜対象物の一例である導体ワイヤ１４が配置されている。成膜対象物は何でもよいので導体ワイヤ１４に限定されないことはもちろんである。 Inside the vacuum chamber 2, cylindrical electrodes 12 made of a plurality of SUS or the like that are plasma generators are arranged side by side with their outer peripheral surfaces in electrical contact. The plurality of cylindrical electrodes 12 are configured by winding a metal mesh in a substantially cylindrical shape. Inside these cylindrical electrodes 12, a conductor wire 14 which is an example of a film formation target is disposed. Needless to say, the film formation target is not limited to the conductor wire 14 because it can be anything.
筒状電極１２には成膜用プラズマ励起用の直流電源の負極側の電位が印加される。直流電源１６の正極側は接地されている。真空チャンバ２は接地されている。直流電源１６は例えば電圧１００ないし２０００Ｖに可変調整することができる。 The cylindrical electrode 12 is applied with a potential on the negative electrode side of the direct current power source for plasma excitation for film formation. The positive electrode side of the DC power supply 16 is grounded. The vacuum chamber 2 is grounded. The DC power supply 16 can be variably adjusted to a voltage of 100 to 2000V, for example.
以上の構成を備えた成膜装置において、真空チャンバ２の内圧を上記圧力範囲で減圧しかつガス導入部２ａから水素ガスと炭化水素系ガスとを導入し、直流電源１６の負電位を筒状電極１２に印加すると、各筒状電極１２の内部に水素ガスによる成膜用プラズマが発生して炭化水素ガスが分解される結果、導体ワイヤ１４表面に炭素膜が成膜される。 In the film forming apparatus having the above configuration, the internal pressure of the vacuum chamber 2 is reduced within the above pressure range, and hydrogen gas and hydrocarbon gas are introduced from the gas introduction part 2a, and the negative potential of the DC power supply 16 is cylindrical. When applied to the electrodes 12, a film for forming a film with hydrogen gas is generated inside each cylindrical electrode 12 and the hydrocarbon gas is decomposed, so that a carbon film is formed on the surface of the conductor wire 14.
図２、図３を参照して上記筒状電極１２の内部に発生する成膜用プラズマについて説明する。図２に図１に示す筒状電極１２の外観を示し、図３に筒状電極１２の断面構成を示す。筒状電極１２それぞれは内径が共に同一の断面円形をなしており、その中央部に導体ワイヤ１４が配置されている。 The film-forming plasma generated inside the cylindrical electrode 12 will be described with reference to FIGS. 2 shows an appearance of the cylindrical electrode 12 shown in FIG. 1, and FIG. 3 shows a cross-sectional configuration of the cylindrical electrode 12. As shown in FIG. Each cylindrical electrode 12 has a circular cross section with the same inner diameter, and a conductor wire 14 is disposed at the center thereof.
筒状電極１２は、直流電源１６の印加により、破線で示すように成膜用プラズマ１８を発生することができる。この成膜用プラズマ１８の密度は直流電源１６の電圧が同一であっても筒状電極１２の内径を小さくするほど高くなる。筒状電極１２の形状が同一であれば、各筒状電極１２の内部に発生する成膜用プラズマ１８の密度を同一に制御することができる。 The cylindrical electrode 12 can generate a film-forming plasma 18 by application of a DC power source 16 as indicated by a broken line. The density of the film-forming plasma 18 increases as the inner diameter of the cylindrical electrode 12 is reduced even if the voltage of the DC power supply 16 is the same. If the shape of the cylindrical electrode 12 is the same, the density of the film-forming plasma 18 generated inside each cylindrical electrode 12 can be controlled to be the same.
筒状電極１２の外周壁は金属線をメッシュ状に編み込んだものであり、多数の開口を有し、また、編み込み形態により種々なメッシュ形態を得ることができる。筒状電極１２の外周壁はメッシュ形状でなくても閉じた形状でも成膜用プラズマ１８を発生させることができる。 The outer peripheral wall of the cylindrical electrode 12 is a metal wire braided into a mesh shape, has a large number of openings, and various mesh forms can be obtained depending on the braid form. Even if the outer peripheral wall of the cylindrical electrode 12 is not a mesh shape but a closed shape, the film-forming plasma 18 can be generated.
筒状電極１２は、図４で示すように相互に分離していても、直流電源１６から同一の負電圧が印加させることにより、それぞれの筒状電極１２内部に成膜用プラズマ１８を発生させることができる。筒状電極１２は図５で示すように断面円形となし真空チャンバ２内部に多数配置してもよいし、図６で示すように断面正六角形となし真空チャンバ内部に多数配置してもよい。 Even if the cylindrical electrodes 12 are separated from each other as shown in FIG. 4, the same negative voltage is applied from the DC power supply 16 to generate the plasma 18 for film formation in each cylindrical electrode 12. be able to. As shown in FIG. 5, the cylindrical electrodes 12 have a circular cross section and may be arranged in a large number inside the vacuum chamber 2, or as shown in FIG. 6, a large number of cylindrical electrodes 12 may be arranged inside the vacuum chamber.
図７および図８は本出願人が製作した実際の成膜装置において筒状電極１２内部に発生している成膜用プラズマ１８の撮影写真を示す。図７は円筒形の真空チャンバ２内部に２個の筒状電極１２を配置し、それぞれの筒状電極１２内部に成膜用プラズマ１８を発生した状態を撮影した写真であり、図８は同真空チャンバ２内部に１個の筒状電極１２を配置し、その筒状電極１２内部に成膜用プラズマ１８を発生した状態を撮影した写真で示す。１５は筒状電極１２を真空チャンバ２内で保持するための電極である。図７では２個の筒状電極１２を両側から２つの保持電極１５で保持しており、図８では１個の筒状電極１２を片側から１つの保持電極１５で保持している。 7 and 8 show photographed photographs of the film-forming plasma 18 generated inside the cylindrical electrode 12 in the actual film-forming apparatus manufactured by the present applicant. FIG. 7 is a photograph of a state in which two cylindrical electrodes 12 are arranged inside a cylindrical vacuum chamber 2 and a film-forming plasma 18 is generated inside each cylindrical electrode 12. FIG. A photograph of a state in which one cylindrical electrode 12 is arranged inside the vacuum chamber 2 and the film-forming plasma 18 is generated inside the cylindrical electrode 12 is shown. Reference numeral 15 denotes an electrode for holding the cylindrical electrode 12 in the vacuum chamber 2. In FIG. 7, two cylindrical electrodes 12 are held by two holding electrodes 15 from both sides, and in FIG. 8, one cylindrical electrode 12 is held by one holding electrode 15 from one side.
これらの写真では、筒状電極１２の外部に成膜用プラズマ１８は発生しておらず、筒状電極１２の内部に成膜用プラズマ１８が高密度に発生していることが示されている。この筒状電極１２はこの写真で示す平面に垂直方向に長い円筒形をなしている。 In these photographs, it is shown that the film-forming plasma 18 is not generated outside the cylindrical electrode 12 and the film-forming plasma 18 is generated at a high density inside the cylindrical electrode 12. . The cylindrical electrode 12 has a cylindrical shape that is long in the direction perpendicular to the plane shown in this photograph.
また、筒状電極１２は個数が１つでも複数でも成膜用プラズマ１８を高密度に励起発生させることができるが、実施の形態ではこのような筒状電極１２を２つ以上配置したものである。すなわち、筒状電極１２の個数とは無関係にそれぞれの筒状電極１２内に高密度に成膜用プラズマ１８を発生させることが可能となったことにより、これら筒状電極１２内に導体ワイヤを挿入することにより当該導体ワイヤの表面全周に炭素膜を成膜することができる。 In addition, even if the number of the cylindrical electrodes 12 is one or more, the film-forming plasma 18 can be excited and generated with high density. In the embodiment, two or more such cylindrical electrodes 12 are arranged. is there. That is, the film-forming plasma 18 can be generated at a high density in each cylindrical electrode 12 regardless of the number of the cylindrical electrodes 12, so that a conductor wire can be provided in the cylindrical electrodes 12. By inserting, a carbon film can be formed on the entire surface of the conductor wire.
本出願人が上記実験で確認したところ、成膜用プラズマ１８は筒状電極１２の長手方向どの位置においても高密度で長手方向全体にわたりほぼ均等に発生しており、この筒状電極１２内の成膜用プラズマ１８中に導体ワイヤ１４を配置しその表面に炭素膜を成膜した場合、その炭素膜を導体ワイヤ１４の長手方向全体にかけて均一膜厚で成膜することができた。 The applicant confirmed in the above experiment that the film-forming plasma 18 was generated at a high density and almost uniformly throughout the longitudinal direction at any position in the longitudinal direction of the cylindrical electrode 12. When the conductor wire 14 was disposed in the film-forming plasma 18 and a carbon film was formed on the surface thereof, the carbon film could be formed with a uniform film thickness over the entire length of the conductor wire 14.
この炭素膜の種類は特に限定しないが、本出願人による成膜条件を種々に変更した場合、グラフェンシート円筒体が単層または多層になったカーボンナノチューブ、多数のナノオーダの壁状炭素薄片が平面方向に集合連成された形態の膜からなるカーボンナノウォール、任意の位置から先端に向かうにつれて外径が小さくなる形状の針状炭素膜に成膜することができる。 The type of the carbon film is not particularly limited. However, when the film forming conditions by the applicant are variously changed, the carbon nanotube in which the graphene sheet cylindrical body is a single layer or a multilayer, and the wall-shaped carbon flakes of many nano-orders are planar. Carbon nanowalls composed of films that are assembled and coupled in the direction, or acicular carbon films whose outer diameter decreases from an arbitrary position toward the tip can be formed.
なお、上記成膜操作は、真空チャンバ２の内圧を排気制御弁８を開けて真空排気系１０により真空状態に減圧し、次いで、排気制御弁８の開度を小さくして真空チャンバ２内の排気速度を下げ、真空チャンバ２に調節回路６の調節の下にガスボンべ４から炭素膜成膜用のガスを導入して所定の圧力に調節した後、筒状電極１２に直流電源１６を印加すると、成膜用プラズマ１８が高密度に発生して炭化水素ガスが分解される結果、導体ワイヤ１４の表面に炭素膜が成膜される。 In the film forming operation, the internal pressure in the vacuum chamber 2 is reduced to a vacuum state by opening the exhaust control valve 8 and the vacuum exhaust system 10, and then the opening degree of the exhaust control valve 8 is reduced to reduce the internal pressure in the vacuum chamber 2. The pumping speed is lowered, the gas for forming the carbon film is introduced into the vacuum chamber 2 from the gas cylinder 4 under the control of the control circuit 6 and adjusted to a predetermined pressure, and then the DC power supply 16 is applied to the cylindrical electrode 12. As a result, the film-forming plasma 18 is generated at a high density and the hydrocarbon gas is decomposed, so that a carbon film is formed on the surface of the conductor wire 14.
図９に上記成膜用プラズマ１８で炭素膜が表面に成膜されたワイヤ状陰極を用いたフィールドエミッションランプ２０を示す。このフィールドエミッションランプ２０は、陽極管２２内面に蛍光体２４付きの陽極２６を設け、陽極管２２の管中央長手方向にワイヤ状陰極２８を空中架設したものである。このワイヤ状陰極２８は、上記導体ワイヤ２４の表面に炭素膜３０が成膜されたものである。このワイヤ状陰極２８と陽極２６との間に図示略の直流電源から電圧を印加することにより、ワイヤ状陰極２８の表面の炭素膜３０に電界集中が発生して電子が電界放射により放出され、その放出された電子は蛍光体２４に衝突し、該蛍光体２４は励起発光して光がフィールドエミッションランプ２０の外部に放出される。このフィールドエミッションランプ２０ではワイヤ状陰極２８の表面に炭素膜３０がその長手方向にも円周方向にも均一に成膜されているので電子は均等に放出される結果、発光特性に輝度むらがないフィールドエミッションランプ２０を提供することができる。 FIG. 9 shows a field emission lamp 20 using a wire-like cathode having a carbon film formed on its surface by the film-forming plasma 18. In this field emission lamp 20, an anode 26 with a phosphor 24 is provided on the inner surface of an anode tube 22, and a wire-like cathode 28 is installed in the air in the longitudinal direction of the center of the anode tube 22. The wire-like cathode 28 is obtained by forming a carbon film 30 on the surface of the conductor wire 24. By applying a voltage from a DC power supply (not shown) between the wire-like cathode 28 and the anode 26, electric field concentration occurs in the carbon film 30 on the surface of the wire-like cathode 28, and electrons are emitted by field emission. The emitted electrons collide with the phosphor 24, the phosphor 24 is excited to emit light, and light is emitted to the outside of the field emission lamp 20. In this field emission lamp 20, the carbon film 30 is uniformly formed on the surface of the wire-like cathode 28 both in the longitudinal direction and in the circumferential direction, so that electrons are emitted uniformly, resulting in uneven luminance in the light emission characteristics. No field emission lamp 20 can be provided.
本発明は、上述した実施の形態に限定されるものではなく、特許請求の範囲に記載した範囲内で、種々な変更ないしは変形を含むものである。 The present invention is not limited to the above-described embodiments, and includes various changes or modifications within the scope described in the claims.
２ 真空チャンバ
１２ 筒状電極
１４ 導体ワイヤ（成膜対象物）
１８ プラズマ
2 Vacuum chamber 12 Cylindrical electrode 14 Conductor wire (film formation object)
18 Plasma
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| JP2013519188A (en) * | 2010-01-26 | 2013-05-23 | ライプニッツ−インスティテュート ファー プラズマフォーチュング ウント テクノロジー イー．ヴイ． | Apparatus and method for generating discharge in hollow body |
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