JP2008003319A - Tftアレイ基板及びその製造方法 - Google Patents
Tftアレイ基板及びその製造方法 Download PDFInfo
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
- H01L29/458—Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
Abstract
本発明は、ソース・ドレイン電極の界面においてコンタクト特性のよいTFTアレイ基板及びその製造方法を得ることを目的とする。
【解決手段】
本発明に係るTFTアレイ基板は、オーミックコンタクト膜8と、オーミックコンタクト膜8の上に形成されたソース電極9及びドレイン電極11とを含むTFT108を有する。さらに、ソース電極9及びドレイン電極11に電気的に接続された画素電極18を有する。また、ソース電極9及びドレイン電極11は、Niを添加元素として含むAl合金によって形成される。
【選択図】 図3
Description
本実施の形態にかかるTFTアレイ基板の構成と製造方法を図を用いて説明する。図2は、本実施の形態にかかるTFTアレイ基板の画素の構成を示す平面図であり、図3は図2のX−Xの断面を示す断面図である。さらに、図3の左側には、ゲート端子部及びソース端子部が示されている。本実施の形態にかかるTFTアレイ基板は、電気光学表示装置に用いられ、ここではその一例として液晶表示装置について説明する。
本実施の形態にかかるTFTアレイ基板は、電気光学表示装置に用いられ、ここではその一例として液晶表示装置について説明する。TFTアレイ基板の平面構成図及び断面構成図は実施の形態1の図2及び図3と同様である。TFTアレイ基板の構成については、第1及び第2の金属薄膜の材料以外は実施の形態1と同様なので、説明を省略する。本実施の形態では、第1及び第2の金属薄膜として、Moを主成分とする合金膜又は純Mo膜を適用している。つまり、ゲート電極2、ゲート配線3、補助容量電極4、ゲート端子5、ソース電極9、ソース配線10、ドレイン電極11、及びソース端子12がMoを主成分とする合金膜又は純Mo膜である。
5 ゲート端子、6 ゲート絶縁膜、7 半導体膜、8 オーミックコンタクト膜、
9 ソース電極、10 ソース配線、11 ドレイン電極、12 ソース端子、
13 チャネル部、14 パッシベーション膜、15 画素コンタクトホール、
16 ゲート端子部コンタクトホール、17 ソース端子部コンタクトホール、
18 画素電極、19 ゲート端子パッド、20 ソース端子パッド
100 基板、101 表示領域、102 額縁領域、103 走査信号駆動回路、
104 表示信号駆動回路、105 画素、106 外部配線、107 外部配線、
108 TFT
Claims (9)
- オーミックコンタクト膜と、前記オーミックコンタクト膜と接する電極とを含むTFTと、
前記電極に電気的に接続され、光透過性の導電性膜とを有するTFTアレイ基板であって、
前記電極がNiを添加元素として含むAl合金によって形成されるTFTアレイ基板。 - 前記電極が1.0wt%以上30wt%以下で添加されたNiを含むAl合金から形成される請求項1に記載のTFTアレイ基板。
- オーミックコンタクト膜と、前記オーミックコンタクト膜と接する電極とを含むTFTが設けられたTFTアレイ基板の製造方法であって、
前記TFTを形成する工程と、
前記TFTを覆うように、280℃以下で層間絶縁膜を成膜する工程と、
前記層間絶縁膜に、前記電極表面まで貫通するコンタクトホールを形成する工程と、
前記コンタクトホールを介して、前記電極に接続される光透過性の導電性膜を形成する工程とを備えるTFTアレイ基板の製造方法。 - 前記オーミックコンタクト膜を形成した後に、前記オーミックコンタクト膜の表面をN2、O2、He、及びHのいずれか1種類以上のガスを用いてプラズマ処理を行う請求項3に記載のTFTアレイ基板の製造方法。
- 前記電極は、Niを添加元素として含むAl合金、又はNbを添加元素として含むMo合金の単層膜から形成される請求項3又は4に記載のTFTアレイ基板の製造方法。
- 前記電極が1.0wt%以上30wt%以下で添加されたNiを含むAl合金から形成される請求項5に記載のTFTアレイ基板の製造方法。
- 前記電極が2.5wt%以上20wt%以下で添加されたNbを含むMo合金から形成される請求項5に記載のTFTアレイ基板の製造方法。
- 前記導電性膜として酸化インジウム、酸化スズ、及び酸化亜鉛のいずれか1種類以上を含む光透過性の導電性材料を用いる請求項3乃至7のいずれかに記載のTFTアレイ基板の製造方法。
- 前記導電性膜形成後に行われるアニール処理の温度が280℃以下である請求項3乃至8のいずれかに記載のTFTアレイ基板の製造方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
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JP2006172860A JP5214858B2 (ja) | 2006-06-22 | 2006-06-22 | Tftアレイ基板及びその製造方法 |
TW096121151A TWI369564B (en) | 2006-06-22 | 2007-06-12 | Tft array substrate and method of manufacturing the same |
US11/762,398 US7915062B2 (en) | 2006-06-22 | 2007-06-13 | Method of manufacturing a TFT array substrate |
KR1020070061342A KR20070121594A (ko) | 2006-06-22 | 2007-06-22 | Tft 어레이 기판 및 그 제조 방법 |
CN200710126225.1A CN100517734C (zh) | 2006-06-22 | 2007-06-22 | Tft阵列衬底的制造方法 |
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JP2006172860A JP5214858B2 (ja) | 2006-06-22 | 2006-06-22 | Tftアレイ基板及びその製造方法 |
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JP5214858B2 JP5214858B2 (ja) | 2013-06-19 |
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US (1) | US7915062B2 (ja) |
JP (1) | JP5214858B2 (ja) |
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CN (1) | CN100517734C (ja) |
TW (1) | TWI369564B (ja) |
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US8067774B2 (en) | 2008-08-20 | 2011-11-29 | Samsung Electronics Co., Ltd. | Thin film transistor panel and method of manufacturing the same |
WO2011148728A1 (ja) * | 2010-05-26 | 2011-12-01 | シャープ株式会社 | 表示装置およびその製造方法 |
US8299614B2 (en) | 2008-04-18 | 2012-10-30 | Kobe Steel, Ltd. | Interconnection structure, a thin film transistor substrate, and a manufacturing method thereof, as well as a display device |
US8535997B2 (en) | 2008-07-03 | 2013-09-17 | Kobe Steel, Ltd. | Wiring structure, thin film transistor substrate, method for manufacturing thin film transistor substrate, and display device |
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JP2011222567A (ja) | 2010-04-02 | 2011-11-04 | Kobe Steel Ltd | 配線構造、表示装置、および半導体装置 |
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CN102655165B (zh) | 2011-03-28 | 2015-04-29 | 京东方科技集团股份有限公司 | 一种非晶氧化物薄膜晶体管及其制作方法、显示面板 |
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CN103810981B (zh) | 2014-01-26 | 2016-01-06 | 京东方科技集团股份有限公司 | 阵列基板和显示面板 |
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JP2019087552A (ja) * | 2017-11-01 | 2019-06-06 | シャープ株式会社 | 薄膜トランジスタの製造方法、及び、薄膜トランジスタ |
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Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08201850A (ja) * | 1995-01-31 | 1996-08-09 | Hitachi Ltd | アクティブマトリクス基板を備えた液晶表示装置 |
JPH10289910A (ja) * | 1997-04-15 | 1998-10-27 | Sharp Corp | 半導体装置の製造方法 |
JPH11283934A (ja) * | 1998-03-31 | 1999-10-15 | Mitsubishi Electric Corp | 薄膜トランジスタの製造方法およびこれを用いた液晶表示装置 |
JP2000216249A (ja) * | 1998-11-16 | 2000-08-04 | Sony Corp | 電子装置の製造方法及びその装置 |
JP2002296609A (ja) * | 2001-03-29 | 2002-10-09 | Nec Corp | 液晶表示装置及びその製造方法 |
JP2005062802A (ja) * | 2003-07-28 | 2005-03-10 | Advanced Display Inc | 薄膜トランジスタアレイ基板の製法 |
JP2006023388A (ja) * | 2004-07-06 | 2006-01-26 | Kobe Steel Ltd | 表示デバイスおよびその製法 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59193062A (ja) | 1983-04-15 | 1984-11-01 | Hitachi Ltd | 多結晶シリコン薄膜トランジスタ |
JP2755376B2 (ja) | 1994-06-03 | 1998-05-20 | 株式会社フロンテック | 電気光学素子の製造方法 |
US6653216B1 (en) * | 1998-06-08 | 2003-11-25 | Casio Computer Co., Ltd. | Transparent electrode forming apparatus and method of fabricating active matrix substrate |
JP3329273B2 (ja) | 1998-06-08 | 2002-09-30 | カシオ計算機株式会社 | 表示装置及びその製造方法 |
JP2000199912A (ja) | 1999-01-06 | 2000-07-18 | Hitachi Ltd | アクティブマトリクス型液晶表示装置およびその製造方法 |
TWI255957B (en) | 1999-03-26 | 2006-06-01 | Hitachi Ltd | Liquid crystal display device and method of manufacturing the same |
JP2000284326A (ja) | 1999-03-30 | 2000-10-13 | Hitachi Ltd | 液晶表示装置とその製造方法 |
JP4169896B2 (ja) | 1999-06-23 | 2008-10-22 | エルジー ディスプレイ カンパニー リミテッド | 薄膜トランジスタとその製造方法 |
KR100660811B1 (ko) * | 1999-12-31 | 2006-12-26 | 엘지.필립스 엘시디 주식회사 | 액정 표시장치용 배선 형성방법 |
KR100332816B1 (ko) * | 2000-05-18 | 2002-04-19 | 구자홍 | 리니어 압축기의 스프링 지지구조 |
JP3940385B2 (ja) * | 2002-12-19 | 2007-07-04 | 株式会社神戸製鋼所 | 表示デバイスおよびその製法 |
KR100669688B1 (ko) | 2003-03-12 | 2007-01-18 | 삼성에스디아이 주식회사 | 박막트랜지스터 및 이를 구비한 평판표시소자 |
KR20060040861A (ko) | 2004-11-05 | 2006-05-11 | 삼성전자주식회사 | 어레이 기판 및 이의 제조방법 |
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-
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- 2007-06-13 US US11/762,398 patent/US7915062B2/en active Active
- 2007-06-22 CN CN200710126225.1A patent/CN100517734C/zh not_active Expired - Fee Related
- 2007-06-22 KR KR1020070061342A patent/KR20070121594A/ko not_active Application Discontinuation
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08201850A (ja) * | 1995-01-31 | 1996-08-09 | Hitachi Ltd | アクティブマトリクス基板を備えた液晶表示装置 |
JPH10289910A (ja) * | 1997-04-15 | 1998-10-27 | Sharp Corp | 半導体装置の製造方法 |
JPH11283934A (ja) * | 1998-03-31 | 1999-10-15 | Mitsubishi Electric Corp | 薄膜トランジスタの製造方法およびこれを用いた液晶表示装置 |
JP2000216249A (ja) * | 1998-11-16 | 2000-08-04 | Sony Corp | 電子装置の製造方法及びその装置 |
JP2002296609A (ja) * | 2001-03-29 | 2002-10-09 | Nec Corp | 液晶表示装置及びその製造方法 |
JP2005062802A (ja) * | 2003-07-28 | 2005-03-10 | Advanced Display Inc | 薄膜トランジスタアレイ基板の製法 |
JP2006023388A (ja) * | 2004-07-06 | 2006-01-26 | Kobe Steel Ltd | 表示デバイスおよびその製法 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8299614B2 (en) | 2008-04-18 | 2012-10-30 | Kobe Steel, Ltd. | Interconnection structure, a thin film transistor substrate, and a manufacturing method thereof, as well as a display device |
US8535997B2 (en) | 2008-07-03 | 2013-09-17 | Kobe Steel, Ltd. | Wiring structure, thin film transistor substrate, method for manufacturing thin film transistor substrate, and display device |
US8067774B2 (en) | 2008-08-20 | 2011-11-29 | Samsung Electronics Co., Ltd. | Thin film transistor panel and method of manufacturing the same |
WO2011148728A1 (ja) * | 2010-05-26 | 2011-12-01 | シャープ株式会社 | 表示装置およびその製造方法 |
Also Published As
Publication number | Publication date |
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JP5214858B2 (ja) | 2013-06-19 |
TW200809367A (en) | 2008-02-16 |
KR20070121594A (ko) | 2007-12-27 |
CN101093848A (zh) | 2007-12-26 |
TWI369564B (en) | 2012-08-01 |
US20070295963A1 (en) | 2007-12-27 |
US7915062B2 (en) | 2011-03-29 |
CN100517734C (zh) | 2009-07-22 |
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