JP2007313587A - Polishing method using abrasive cloth, humidification for abrasive cloth, heating container, polishing device using abrasive cloth, and abrasive cloth - Google Patents

Polishing method using abrasive cloth, humidification for abrasive cloth, heating container, polishing device using abrasive cloth, and abrasive cloth Download PDF

Info

Publication number
JP2007313587A
JP2007313587A JP2006144032A JP2006144032A JP2007313587A JP 2007313587 A JP2007313587 A JP 2007313587A JP 2006144032 A JP2006144032 A JP 2006144032A JP 2006144032 A JP2006144032 A JP 2006144032A JP 2007313587 A JP2007313587 A JP 2007313587A
Authority
JP
Japan
Prior art keywords
polishing
polishing cloth
cloth
abrasive cloth
water
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2006144032A
Other languages
Japanese (ja)
Inventor
Kenji Yamashita
健児 山下
Yukio Ono
幸雄 大野
Toshiyuki Kurihara
利幸 栗原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumco Techxiv Corp
Original Assignee
Sumco Techxiv Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumco Techxiv Corp filed Critical Sumco Techxiv Corp
Priority to JP2006144032A priority Critical patent/JP2007313587A/en
Publication of JP2007313587A publication Critical patent/JP2007313587A/en
Withdrawn legal-status Critical Current

Links

Images

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P80/00—Climate change mitigation technologies for sector-wide applications
    • Y02P80/30—Reducing waste in manufacturing processes; Calculations of released waste quantities

Landscapes

  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To reduce cost required for quality confirmation by eliminating a material loss while improving production efficiency by enabling a polishing device to operate in full-scale without executing dummy run. <P>SOLUTION: Water-absorbing properties of an abrasive cloth 2 are enhanced by humidifying and heating abrasive cloth before sticking the abrasive cloth to the polishing device 100. A polishing target 1 is polished by using the abrasive cloth after sticking the abrasive cloth with the enhanced water-absorbing properties to the polishing device. In this case, the inside of a container is made into a humidified and heated atmosphere while storing the abrasive cloth in the container so as to enhance the water-absorbing properties of the abrasive cloth. The abrasive cloth is humidified and heated in a state of sticking the abrasive cloth to surface plates 101, 102 of the polishing device so as to enhance the water-absorbing properties of the abrasive cloth, and consequently, to polish the polishing target by using the abrasive cloth with the enhanced water-absorbing properties. In this case, water is made to flow toward the abrasive cloth while heating the surface plates of the polishing device so as to enhance the water-absorbing properties of the abrasive cloth. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

本発明は、研磨布を用いた研磨方法、研磨布の加湿・加温用容器、研磨布を用いた研磨装置、研磨布に関し、特に、研磨装置の定盤に貼着された上でシリコンウェーハ、ガラスなどの研磨対象を研磨する不織布タイプの研磨布に関するものである。   TECHNICAL FIELD The present invention relates to a polishing method using a polishing cloth, a container for humidifying and heating the polishing cloth, a polishing apparatus using the polishing cloth, and a polishing cloth, and in particular, a silicon wafer after being attached to a surface plate of the polishing apparatus. The present invention relates to a nonwoven fabric type polishing cloth for polishing an object to be polished such as glass.

ロデール社のＳＵＢＡシリーズで代表される不織布タイプの研磨布（研磨クロス、研磨パッドともいう）は、シリコンウェーハ、ガラスなどの研磨対象を研磨するために広く用いられている。以下、研磨対象がシリコンウェーハである場合を例にとり研磨装置の概要について説明する。   Non-woven fabric type polishing cloths (also referred to as polishing cloths or polishing pads) typified by Rodale's SUBA series are widely used for polishing objects such as silicon wafers and glass. Hereinafter, the outline of the polishing apparatus will be described by taking as an example the case where the polishing target is a silicon wafer.

図１（ａ）、（ｂ）は、シリコンウェーハ１の両面を研磨する両面研磨装置１０の側面図、斜視図をそれぞれ示している。   FIGS. 1A and 1B respectively show a side view and a perspective view of a double-side polishing apparatus 10 that polishes both sides of a silicon wafer 1.

両面研磨装置１００は、シリコンウェーハ１の裏面１ａ側、表面１ｂ側にそれぞれ設けられ、表面に研磨布２がそれぞれ貼着された上定盤１０１、下定盤１０２とから構成されている。上定盤１０１は、上昇下降が自在で、かつ上昇位置で水平方向に移動自在に構成されている。研磨用キャリア１０は、両面研磨装置１００の下定盤１０２上に装填される部材である。研磨用キャリア１０が装填されると、研磨用キャリア１０の保持孔内にシリコンウェーハ１が挿入される。研磨用キャリア１０の保持孔の孔径は、シリコンウェーハ１が保持孔内で移動運動可能に、シリコンウェーハ１の径よりも大きく設定されている。   The double-side polishing apparatus 100 includes an upper surface plate 101 and a lower surface plate 102 that are respectively provided on the back surface 1a side and the front surface 1b side of the silicon wafer 1 and the polishing cloth 2 is adhered to the surface. The upper surface plate 101 is configured to be freely raised and lowered and movable in the horizontal direction at the raised position. The polishing carrier 10 is a member loaded on the lower surface plate 102 of the double-side polishing apparatus 100. When the polishing carrier 10 is loaded, the silicon wafer 1 is inserted into the holding hole of the polishing carrier 10. The diameter of the holding hole of the polishing carrier 10 is set larger than the diameter of the silicon wafer 1 so that the silicon wafer 1 can move and move within the holding hole.

上定盤１０１、下定盤１０２は、インナーギヤ１０２ａの中心軸を回転中心にして回転自在に構成されている。上定盤１０１、下定盤１０２は互いに反対方向に回転される。   The upper surface plate 101 and the lower surface plate 102 are configured to be rotatable about the central axis of the inner gear 102a. The upper surface plate 101 and the lower surface plate 102 are rotated in opposite directions.

上定盤１０１には、冷却水路１０６が形成されており、同様に下定盤１０２には、冷却水路１０８が形成されている。上定盤１０１には、研磨布２の表面の孔に連通する研磨用スラリ通路１０７が形成されている。この研磨用スラリ通路１０７は、リンス液（純水）の通路を兼用している。上定盤１０１の上方に設けられた切換バルブを切換作動することにより、研磨用スラリ（スラリ液）、リンス液のいずれかが研磨用スラリ通路１０７内に供給される。   A cooling water channel 106 is formed in the upper surface plate 101, and similarly, a cooling water channel 108 is formed in the lower surface plate 102. A polishing slurry passage 107 communicating with a hole on the surface of the polishing pad 2 is formed in the upper surface plate 101. The polishing slurry passage 107 also serves as a rinse liquid (pure water) passage. By switching the switching valve provided above the upper surface plate 101, either polishing slurry (slurry liquid) or rinsing liquid is supplied into the polishing slurry passage 107.

下定盤１０２の外側には、研磨加工後の研磨布２の乾燥を防止するために、リンス液（純水のシャワー）を下定盤１０２の内側に向けて噴霧するリンス液噴射ノズル１１０が設けられている。   A rinsing liquid injection nozzle 110 for spraying a rinsing liquid (pure water shower) toward the inner side of the lower surface plate 102 is provided outside the lower surface plate 102 in order to prevent the polishing cloth 2 after polishing from drying. ing.

研磨用キャリア１０は、円板状に形成されており、周方向に等間隔に、シリコンウェーハ１を収容する保持孔が、たとえば３つ形成されている。研磨用キャリア１０の外周には、下定盤１０２の中心に形成されたインナーギヤ（サンギア）１０２ａに噛み合うとともに、下定盤１０２の外周に沿って設けられたアウターギヤ（内歯車）１０５と噛み合う歯１２（遊星ギア）が形成されている。研磨用キャリア１０は、インナーギヤ１０２ａを中心に下定盤１０２の周方向に沿って等間隔に、たとえば４つ配置されている。研磨用キャリア１０は、下定盤１０２の研磨布１０４上に配置されている。インナーギヤ１０２ａ、アウターギヤ１０５は、インナーギヤ１０２ａの中心軸を回転中心にして回転自在に構成されている
以上のように研磨装置１００が構成されており、シリコンウェーハ１が研磨用キャリア１０の保持孔内に収容され、上定盤１０１、下定盤１０２がシリコンウェーハ１側に移動されることによりシリコンウェーハ１の表面、裏面にそれぞれ研磨クロス２が押し付けられ、シリコンウェーハ１の表面と上定盤１０１の研磨クロス２との間、およびシリコンウェーハ１の裏面と下定盤１０２の研磨クロス２との間に研磨用のスラリが供給されつつ、研磨用キャリア１０と、上定盤１０１、下定盤１０２とが相対的に逆回転される。これによりシリコンウェーハ１の表面と裏面がそれぞれ所定の研磨代だけ研磨されて鏡面状態にされる。 The polishing carrier 10 is formed in a disk shape, and three holding holes for accommodating the silicon wafer 1 are formed at equal intervals in the circumferential direction, for example. Teeth 12 that mesh with an inner gear (sun gear) 102 a formed at the center of the lower surface plate 102 and mesh with an outer gear (internal gear) 105 provided along the outer periphery of the lower surface plate 102 on the outer periphery of the polishing carrier 10. (Planetary gear) is formed. For example, four polishing carriers 10 are arranged at equal intervals along the circumferential direction of the lower surface plate 102 around the inner gear 102a. The polishing carrier 10 is disposed on the polishing cloth 104 of the lower surface plate 102. The inner gear 102a and the outer gear 105 are configured to be rotatable about the central axis of the inner gear 102a. The polishing apparatus 100 is configured as described above, and the silicon wafer 1 holds the polishing carrier 10. When the upper surface plate 101 and the lower surface plate 102 are accommodated in the holes and moved to the silicon wafer 1 side, the polishing cloth 2 is pressed against the front surface and the back surface of the silicon wafer 1, respectively. The polishing carrier 10, the upper surface plate 101, and the lower surface plate 102 are supplied with a polishing slurry between the polishing cloth 2 of 101 and between the back surface of the silicon wafer 1 and the polishing cloth 2 of the lower surface plate 102. Are rotated in the reverse direction. As a result, the front surface and the back surface of the silicon wafer 1 are polished by a predetermined polishing allowance to be in a mirror state.

研磨加工中は、上定盤１０１、下定盤１０２の温度が上昇するため、上定盤１０１、下定盤１０２の温度の上昇を抑え温度を安定させるために冷却水路１０６、１０８に冷却水が流される。   During the polishing process, the temperature of the upper surface plate 101 and the lower surface plate 102 rises, so that cooling water flows through the cooling water channels 106 and 108 in order to suppress the temperature rise of the upper surface plate 101 and the lower surface plate 102 and stabilize the temperature. It is.

研磨加工の後半では、上記切換バルブを切換作動されて、研磨用スラリからリンス液に切り換えられて、リンス液が上定盤１０１の研磨用スラリ通路１０７を介してシリコンウェーハ１の表面と上定盤１０１の研磨クロス２との間、およびシリコンウェーハ１の裏面と下定盤１０２の研磨クロス２との間それぞれに供給される。   In the latter half of the polishing process, the switching valve is switched to switch from the polishing slurry to the rinse liquid, and the rinse liquid is fixed to the surface of the silicon wafer 1 via the polishing slurry passage 107 of the upper surface plate 101. It is supplied between the polishing cloth 2 of the plate 101 and between the back surface of the silicon wafer 1 and the polishing cloth 2 of the lower surface plate 102.

研磨加工後には、上定盤１０１が上昇されて、リンス液噴射ノズル１１０から下定盤１０２の内側に向けてリンス液が噴霧され、シリコンウェーハ１上に残っている研磨用スラリが取り除かれる。   After the polishing process, the upper surface plate 101 is raised and the rinsing liquid is sprayed from the rinsing liquid injection nozzle 110 toward the inside of the lower surface plate 102, and the polishing slurry remaining on the silicon wafer 1 is removed.

研磨加工の時間、バッチ回数が増加するに伴い、研磨布２の摩耗が徐々に進行し、シリコンウェーハ１の平坦度が徐々に低下していく。このため研磨布２は、数十バッチの研磨加工に使用されると、定盤１０１、１０２から外され、未使用の新しい研磨布２が定盤１０１、１０２に貼着される。   As the polishing time and the number of batches increase, the wear of the polishing cloth 2 gradually proceeds and the flatness of the silicon wafer 1 gradually decreases. For this reason, when the polishing cloth 2 is used for polishing processing of several tens of batches, the polishing cloth 2 is removed from the surface plates 101 and 102, and an unused new polishing cloth 2 is attached to the surface plates 101 and 102.

シリコンウェーハ１に要求される平坦度、つまり製品として出荷できる平坦度の基準レベルは、ＳＦＱＲ（μｍ）で０．０９以下である。   The standard level of flatness required for the silicon wafer 1, that is, the flatness that can be shipped as a product, is 0.09 or less in SFQR (μm).

（特許文献にみられる従来技術）
下記特許文献１には、研磨加工中に、研磨用スラリが蒸発、乾燥し、これにより粉塵として飛散してシリコンウェーハにスクラッチ傷を生じせしめることを防止することを目的として、研磨加工中に、片面研磨装置の定盤上にミストを発生させ、定盤上の湿度を５５％以上に制御するという発明が記載されている。
特開２００４−３３０３３８号公報 (Prior art found in patent literature)
In the following Patent Document 1, during the polishing process, the polishing slurry evaporates and dries during the polishing process, thereby preventing the slurry from being scattered as dust and causing scratches on the silicon wafer. An invention is described in which mist is generated on a surface plate of a single-side polishing apparatus and the humidity on the surface plate is controlled to 55% or more.
JP 2004-330338 A

研磨布メーカーから受け入れた未使用の研磨布２を、定盤１０１、１０２に貼着した直後は、シリコンウェーハ１を均一な安定した平坦度にすることができない。このため、平坦度が均一に安定するまで、所定のバッチ数をかけてダミーランニングを行う必要がある。   Immediately after the unused polishing cloth 2 received from the polishing cloth manufacturer is attached to the surface plates 101 and 102, the silicon wafer 1 cannot be made uniform and flat. For this reason, it is necessary to perform dummy running over a predetermined number of batches until the flatness is stabilized uniformly.

しかも、研磨布メーカーから受け入れた未使用の研磨布２は、個々に品質のバラツキがあり、未使用の研磨布２を定盤１０１、１０２に貼着した直後に、すでにシリコンウェーハ１の平坦度が上記基準レベルに到達している品質のものもあれば、基準レベルに到達していない品質のものもある。このため、ダミーランニングは、個々の研磨布毎に、ダミーウェーハを消費して、ウェーハ平坦度の品質を確認しながら行う必要がある。なお、ダミーランニング中に消費したシリコンウェーハ（ダミーウェーハ）は、当然、製品として出荷することはできない。 In addition, the unused polishing cloth 2 received from the polishing cloth manufacturer has individual quality variations, and the flatness of the silicon wafer 1 is already immediately after the unused polishing cloth 2 is attached to the surface plates 101 and 102. Some products have quality that has reached the reference level, while others have quality that has not reached the reference level. For this reason, it is necessary to perform dummy running while consuming dummy wafers for each polishing cloth and checking the quality of wafer flatness. Of course, a silicon wafer (dummy wafer) consumed during dummy running cannot be shipped as a product.

図２は、研磨加工のバッチ数と、シリコンウェーハ１の平坦度ＳＦＱＲ（μｍ）との関係を示すグラフである。図２の横軸は、研磨布２を定盤１０１、１０２に貼着してからのバッチ数であり、縦軸は、研磨布メーカーから受け入れた各研磨布２Ａ、２Ｂ、２Ｃそれぞれを使用して研磨されたシリコンウェーハ１の平坦度ＳＦＱＲ（μｍ）である。なお、１バッチは、３０〜９０分程度である。   FIG. 2 is a graph showing a relationship between the number of polishing batches and the flatness SFQR (μm) of the silicon wafer 1. The horizontal axis in FIG. 2 is the number of batches after the polishing cloth 2 is adhered to the surface plates 101 and 102, and the vertical axis indicates the respective polishing cloths 2A, 2B and 2C received from the polishing cloth manufacturer. The flatness SFQR (μm) of the silicon wafer 1 polished in this way. One batch is about 30 to 90 minutes.

図２に示すように、各研磨布２Ａ、２Ｂ、２Ｃいずれの場合も、研磨布２を定盤１０１、１０２に貼着した時点、つまりバッチ数がゼロの時点から、バッチ数増加に伴い、平坦度ＳＦＱＲ（μｍ）が徐々に低下して、平坦度ＳＦＱＲ（μｍ）が安定していく。   As shown in FIG. 2, in each of the polishing cloths 2A, 2B, and 2C, from the time when the polishing cloth 2 was adhered to the surface plates 101 and 102, that is, from the time when the number of batches was zero, as the number of batches increased, The flatness SFQR (μm) gradually decreases, and the flatness SFQR (μm) is stabilized.

上述したように、製品として許容されるシリコンウェーハ１の平坦度の基準レベルは、ＳＦＱＲ（μｍ）で０．０９以下である。   As described above, the standard level of flatness of the silicon wafer 1 that is allowed as a product is 0.09 or less in terms of SFQR (μm).

図２からわかるように、研磨布２Ａを用いた研磨されたシリコンウェーハ１のＳＦＱＲ（μｍ）は、貼着直後ですでに基準レベル０．０９（μｍ）近傍にあり、０〜数バッチ程度のダミーランニングを経て基準レベル０．０９（μｍ）に到達する。   As can be seen from FIG. 2, the SFQR (μm) of the silicon wafer 1 polished using the polishing cloth 2 </ b> A is already in the vicinity of the reference level 0.09 (μm) immediately after sticking, and is about 0 to several batches. Through the dummy running, the reference level reaches 0.09 (μm).

これに対して、研磨布２Ｂを用いた研磨されたシリコンウェーハ１のＳＦＱＲ（μｍ）は、貼着直後で０．１２程度であり基準レベル０．０９（μｍ）に到達しておらず、研磨布２Ａよりも多くのバッチ回数、より長時間のダミーランニングを経て基準レベル０．０９（μｍ）に到達する。   On the other hand, the SFQR (μm) of the silicon wafer 1 polished using the polishing cloth 2B is about 0.12 immediately after sticking, and has not reached the reference level 0.09 (μm). The reference level of 0.09 (μm) is reached through a larger number of batches and longer dummy running than the cloth 2A.

さらに、研磨布２Ｃを用いた研磨されたシリコンウェーハ１のＳＦＱＲ（μｍ）は、貼着直後で０．１５程度であり基準レベル０．０９（μｍ）以下に到達しておらず、研磨布２Ａ、２Ｂよりも多くのバッチ回数、より長時間のダミーランニングを経て基準レベル０．０９（μｍ）に到達する。   Further, the SFQR (μm) of the silicon wafer 1 polished using the polishing cloth 2C is about 0.15 immediately after the sticking and does not reach the reference level of 0.09 (μm) or less. The reference level of 0.09 (μm) is reached through a batch run more than 2B and a longer dummy run.

このようにウェーハ平坦度を基準レベル以下に安定させるためには、平均して１０バッチ程度の長時間のダミーランニングが必要である。しかも、研磨布２の品質は個々に異なるため、抜き取り検査が不可能であり、どの程度のダミーランニングを行えば本格稼働に移行できるかは、個々の研磨布毎にダミーウェーハで品質を確認しなければならない。   Thus, in order to stabilize the wafer flatness below the reference level, a long time dummy running of about 10 batches on average is required. Moreover, since the quality of the polishing cloth 2 is different from each other, sampling inspection is impossible, and the level of dummy running can be shifted to full-scale operation by checking the quality with a dummy wafer for each polishing cloth. There must be.

しかし、このようにダミーランニングを長時間かけて行うことにすると、研磨装置の稼働率が低下し、ひいては、シリコンウェーハの生産効率が低下する。また、研磨布の抜き取り検査が不可能であるため、個々の研磨布毎にダミーウェーハで品質を確認することにすると、ダミーランニングに使用する素材の損失を招き、品質確認のためのコストが多大なものとなる。   However, if dummy running is performed over a long period of time in this way, the operating rate of the polishing apparatus decreases, and consequently the production efficiency of the silicon wafer decreases. In addition, since it is impossible to perform a sampling inspection of the polishing cloth, if the quality is checked with a dummy wafer for each polishing cloth, the material used for dummy running is lost, and the cost for checking the quality is great. It will be something.

本発明は、こうした実状に鑑みてなされたものであり、ダミーランニングを行うことなく研磨装置を本格稼働できるようにして、生産効率を向上させるとともに、素材の損失を無くして品質確認のためのコストを低減することを解決課題とするものである。   The present invention has been made in view of such a situation, and enables the polishing apparatus to operate in full operation without performing dummy running, thereby improving the production efficiency and eliminating the loss of materials and the cost for quality confirmation. It is a problem to be solved.

なお、特許文献１記載の発明は、粉塵によるシリコンウェーハのスクラッチ傷発生を防止することを解決課題として、研磨加工中に定盤上を加湿するという発明であり、ダミーランニングを行うことなく研磨装置を本格稼働できるようにすることを解決課題として、研磨加工前に研磨布を加湿、加温するという本発明とは、全く異なるものである。   The invention described in Patent Document 1 is an invention in which the surface of the surface plate is humidified during the polishing process with the object of preventing the generation of scratches on the silicon wafer due to dust, and a polishing apparatus without performing dummy running The present invention is completely different from the present invention in which the polishing cloth is humidified and heated before the polishing process, in order to enable full-scale operation.

第１発明は、
研磨装置に研磨布を貼着する前に、研磨布を加湿、加温して、研磨布の吸水性を高める加湿・加温工程と、
吸水性が高められた研磨布を研磨装置に貼着し、この研磨布を用いて研磨対象を研磨する研磨工程と
を含む研磨布を用いた研磨方法であることを特徴とする。 The first invention is
Before attaching the polishing cloth to the polishing device, humidifying and heating the polishing cloth to increase the water absorption of the polishing cloth,
A polishing method using a polishing cloth, comprising: attaching a polishing cloth having improved water absorption to a polishing apparatus; and polishing the object to be polished using the polishing cloth.

第２発明は、第１発明において、
加湿・加温工程は、
容器内に研磨布を収容するとともに容器内を加湿、加温された雰囲気にして、研磨布の吸水性を高める工程であること
を特徴とする。 The second invention is the first invention,
The humidification / heating process
It is a step of increasing the water absorption of the polishing cloth by storing the polishing cloth in the container and making the container a humidified and heated atmosphere.

第３発明は、
研磨装置の定盤に研磨布が貼着された状態で、研磨布を加湿、加温して、研磨布の吸水性を高める加湿・加温工程と、
吸水性が高められた研磨布を用いて、研磨対象を研磨する研磨工程と
を含む研磨布を用いた研磨方法であることを特徴とする。 The third invention is
In a state where the polishing cloth is attached to the surface plate of the polishing apparatus, humidifying and heating the polishing cloth to increase the water absorption of the polishing cloth,
A polishing method using a polishing cloth comprising a polishing step of polishing an object to be polished using a polishing cloth with improved water absorption.

第４発明は、第３発明において、
加湿・加温工程は、
研磨装置の定盤を加温するとともに、研磨布に向けて水を流すことで、研磨布の吸水性を高める工程であること
を特徴とする。 The fourth invention is the third invention,
The humidification / heating process
It is a process of increasing the water absorption of the polishing cloth by heating the surface plate of the polishing apparatus and flowing water toward the polishing cloth.

第５発明は、第３発明において、
加湿・加温工程は、
研磨布に向けて温水を流すことで、研磨布の吸水性を高める工程であること
を特徴とする。 A fifth invention is the third invention,
The humidification / heating process
It is a process that increases the water absorption of the polishing cloth by flowing warm water toward the polishing cloth.

第６発明は、第１発明〜第５発明において、
加湿・加温工程では、
研磨布を用いて研磨対象を研磨したときに、研磨対象の平坦度ＳＦＱＲ（μｍ）が、０．０９以下になるまで、研磨布を加温、加湿すること
を特徴とする。 A sixth invention is the first invention to the fifth invention,
In the humidification / heating process,
When the polishing object is polished using the polishing cloth, the polishing cloth is heated and humidified until the flatness SFQR (μm) of the polishing object becomes 0.09 or less.

第７発明は、
容器内部に研磨布が収容されるとともに容器内部が加湿、加温された雰囲気にされて、研磨布の吸水性を高める処理が行われる研磨布の加湿・加温用容器であることを特徴とする。 The seventh invention
A polishing cloth is a container for humidifying and heating a polishing cloth in which a polishing cloth is contained in the container and the inside of the container is humidified and heated to perform a treatment for increasing the water absorption of the polishing cloth. To do.

第８発明は、第７発明において、
研磨布を用いて研磨対象を研磨したときに、研磨対象の平坦度ＳＦＱＲ（μｍ）が、０．０９以下になるまで、容器内に研磨布が収容されることを特徴とする。 In an eighth aspect based on the seventh aspect,
When the polishing object is polished using the polishing cloth, the polishing cloth is accommodated in the container until the flatness SFQR (μm) of the polishing object becomes 0.09 or less.

第９発明は、
研磨装置に、
研磨布が貼着された定盤を加温する加温手段と、
研磨布に向けて水を流す流水手段と、
研磨装置で研磨布を用いて研磨対象を研磨する前に、予め加温手段と、流水手段を作動させて研磨布を加湿、加温して研磨布の吸水性を高める制御手段と
を備えた研磨布を用いた研磨装置であることを特徴とする。 The ninth invention
In the polishing equipment,
A heating means for heating the surface plate to which the polishing cloth is adhered;
Water flowing means for flowing water toward the polishing cloth;
Before polishing the object to be polished with the polishing cloth in the polishing apparatus, a heating means and a control means for increasing the water absorption of the polishing cloth by operating the flowing water means to humidify and heat the polishing cloth in advance. A polishing apparatus using a polishing cloth.

第１０発明は、
研磨装置に、
研磨布に向けて温水を流す温水流水手段と、
研磨装置で研磨布を用いて研磨対象を研磨する前に、予め温水流水手段を作動させて研磨布を加湿、加温して研磨布の吸水性を高める制御手段と
を備えた研磨布を用いた研磨装置であることを特徴とする。 The tenth invention is
In the polishing equipment,
Hot water flowing means for flowing warm water toward the polishing cloth;
Before polishing the object to be polished with the polishing cloth in the polishing apparatus, use a polishing cloth equipped with a control means for operating the warm water flowing means in advance to humidify and heat the polishing cloth to increase the water absorption of the polishing cloth. It is characterized by being a polishing apparatus.

第１１発明は、第９発明、第１０発明において、
制御手段は、
研磨布を用いて研磨対象を研磨したときに、研磨対象の平坦度ＳＦＱＲ（μｍ）が、０．０９以下になるまで、研磨布を加湿、加温すること
を特徴とする。 The eleventh invention is the ninth invention, the tenth invention,
The control means
When the polishing object is polished using the polishing cloth, the polishing cloth is humidified and heated until the flatness SFQR (μm) of the polishing object becomes 0.09 or less.

第１２発明は、
研磨装置に貼着されて研磨対象を研磨するために用いられる研磨布であって、
加湿、加温され、吸水性が高められた状態にされている研磨布であることを特徴とする。 The twelfth invention
A polishing cloth that is affixed to a polishing apparatus and used to polish an object to be polished,
It is characterized by being a polishing cloth that has been humidified and heated to have improved water absorption.

第１３発明は、第１２発明において、
研磨対象を研磨したときに、研磨対象の平坦度ＳＦＱＲ（μｍ）が、０．０９以下になることを特徴とする。 In a thirteenth aspect based on the twelfth aspect,
When the object to be polished is polished, the flatness SFQR (μm) of the object to be polished is 0.09 or less.

本発明者は、ある程度の時間、研磨加工に使用された研磨布（特に不織布タイプの研磨布）には、ある程度の量の研磨用スラリ（スラリ液）が含有された状態になっており、これがシリコンウェーハの平坦度を基準レベル以下で安定する原因になっているという知見に鑑みて、本発明をなし得た。   The present inventor has found that a certain amount of polishing slurry (slurry liquid) is contained in a polishing cloth (particularly a nonwoven fabric type polishing cloth) used for polishing for a certain period of time. In view of the knowledge that the flatness of the silicon wafer is stabilized below the reference level, the present invention has been achieved.

すなわち、研磨装置を稼働させて研磨加工を行う前に、研磨布を加湿、加温しておき、研磨布の吸水性を高めた状態にしておく。そうしておくと、その研磨布を研磨加工に使用した場合、即座に研磨用スラリが高い吸水性をもって研磨布に吸水され、上述したある程度の時間、研磨加工に使用した研磨布と同様に、ある程度の量の研磨用スラリが含有された状態になる。このため、研磨加工に未使用の研磨布を研磨加工（本格稼働）に使用しても、研磨加工開始直後から、シリコンウェーハ１の平坦度は、基準レベル以下（ＳＦＱＲ（μｍ）が、０．０９以下）で安定する。これにより、ダミーランニングを行うことなく、研磨装置を本格稼働することができる。   That is, before the polishing apparatus is operated and the polishing process is performed, the polishing cloth is humidified and heated so that the water absorption of the polishing cloth is increased. Then, when the polishing cloth is used for polishing processing, the polishing slurry is immediately absorbed into the polishing cloth with high water absorption, and for the above-mentioned period of time, like the polishing cloth used for polishing processing, A certain amount of polishing slurry is contained. For this reason, even if a polishing cloth that is not used for polishing is used for polishing (full operation), the flatness of the silicon wafer 1 is not more than a reference level (SFQR (μm) is 0. (09 or less). As a result, the polishing apparatus can be fully operated without performing dummy running.

第１発明の方法は、図１の研磨装置１００に研磨布２を貼着する前に、研磨布２を加湿、加温して、研磨布２の吸水性を高めておき、吸水性が高められた研磨布２を研磨装置１００に貼着し、この研磨布２を用いて研磨対象１を研磨するという研磨方法である。   In the method of the first invention, before adhering the polishing cloth 2 to the polishing apparatus 100 of FIG. 1, the polishing cloth 2 is humidified and heated to increase the water absorption of the polishing cloth 2, thereby increasing the water absorption. In this polishing method, the polishing cloth 2 is adhered to the polishing apparatus 100 and the polishing object 1 is polished using the polishing cloth 2.

第２発明の方法は、第１発明の方法を実施するに際して、図３に示すような容器２０内に研磨布２を収容するとともに容器２０内を加湿、加温された雰囲気にして、研磨布２の吸水性を高めるようにするものである。   In the method of the second invention, when the method of the first invention is carried out, the polishing cloth 2 is accommodated in the container 20 as shown in FIG. 3 and the atmosphere in the container 20 is humidified and heated. The water absorption of 2 is increased.

第３発明の方法は、図１の研磨装置１００の定盤１０１、１０２に研磨布２が貼着された状態で、研磨布２を加湿、加温して、研磨布２の吸水性を高めておき、この吸水性が高められた研磨布２を用いて、研磨対象１を研磨するという研磨方法である。   The method of the third invention increases the water absorption of the polishing cloth 2 by humidifying and heating the polishing cloth 2 with the polishing cloth 2 attached to the surface plates 101 and 102 of the polishing apparatus 100 of FIG. A polishing method in which the polishing object 1 is polished using the polishing cloth 2 with improved water absorption.

第４発明の方法は、第３発明の方法を実施するに際して、研磨装置１００の定盤１０１、１０２を加温するとともに、研磨布２に向けて水を流すことで、研磨布２の吸水性を高めるようにするものである。   In the method of the fourth invention, when the method of the third invention is carried out, the surface plates 101 and 102 of the polishing apparatus 100 are heated, and water is allowed to flow toward the polishing cloth 2 to thereby absorb the water absorption of the polishing cloth 2. It is intended to increase.

第５発明の方法は、第３発明の方法を実施するに際して、研磨布２に向けて温水を流すことで、研磨布２の吸水性を高めるようにするものである。   In the method of the fifth invention, when the method of the third invention is performed, the water absorption of the polishing pad 2 is increased by flowing warm water toward the polishing pad 2.

第６発明の方法は、第１発明〜第５発明の方法を実施するに際して、研磨布２を用いて研磨対象１を研磨したときに、研磨対象１の平坦度ＳＦＱＲ（μｍ）が、０．０９以下になるまで、研磨布２を加温、加湿するものである。   In the method of the sixth invention, when the polishing object 1 is polished using the polishing cloth 2 when the methods of the first to fifth inventions are carried out, the flatness SFQR (μm) of the polishing object 1 is 0.00. The polishing cloth 2 is heated and humidified until it becomes 09 or less.

第７発明は、第２発明に対応する装置発明であり、図３に示す容器２を用いて研磨布２に対して加湿、加温が行われる。   7th invention is an apparatus invention corresponding to 2nd invention, and humidification and warming are performed with respect to polishing cloth 2 using the container 2 shown in FIG.

第８発明は、第７発明の装置発明を実施するに際して、研磨布２を用いて研磨対象１を研磨したときに、研磨対象１の平坦度ＳＦＱＲ（μｍ）が、０．０９以下になるまで、容器２０内に研磨布２を収容するものである。   In the eighth invention, when the polishing object 2 is polished using the polishing cloth 2 when the apparatus invention of the seventh invention is carried out, the flatness SFQR (μm) of the polishing object 1 becomes 0.09 or less. The polishing cloth 2 is accommodated in the container 20.

第９発明の装置は、研磨装置１００に、研磨布２が貼着された定盤１０１、１０２を加温する加温手段（冷却水路１０６、１０８）と、研磨布２に向けて水を流す流水手段（リンス液噴射ノズル１１０あるいは研磨用スラリ通路１０７）と、研磨装置１００で研磨布２を用いて研磨対象１を研磨する前に、予め加温手段と、流水手段を作動させて研磨布２を加湿、加温して研磨布２の吸水性を高める制御手段とを備えるように構成したものである。   The apparatus according to the ninth aspect of the invention is a heating means (cooling water channels 106, 108) for heating the surface plates 101, 102 to which the polishing cloth 2 is adhered, and water flows toward the polishing cloth 2 to the polishing apparatus 100. Before the polishing object 1 is polished using the polishing cloth 2 by the flowing water means (the rinsing liquid jet nozzle 110 or the polishing slurry passage 107) and the polishing apparatus 100, the heating cloth and the flowing water means are operated in advance to polish the polishing cloth. And a control means for increasing the water absorption of the polishing pad 2 by humidifying and heating 2.

第１０発明の装置は、研磨装置１００に、研磨布２に向けて温水を流す温水流水手段（リンス液噴射ノズル１１０あるいは研磨用スラリ通路１０７）と、研磨装置１００で研磨布２を用いて研磨対象１を研磨する前に、予め温水流水手段を作動させて研磨布２を加湿、加温して研磨布２の吸水性を高める制御手段とを備えるように構成したものである。   The apparatus according to the tenth aspect of the present invention is to polish the polishing apparatus 100 with hot water flowing means (rinse liquid spray nozzle 110 or polishing slurry passage 107) for flowing warm water toward the polishing cloth 2, and using the polishing cloth 2 with the polishing apparatus 100. Before polishing the object 1, it is configured to include control means for operating the warm water flowing means in advance to humidify and heat the polishing cloth 2 to increase the water absorption of the polishing cloth 2.

第１１発明は、第９発明、第１０発明の装置発明を実施するに際して、制御手段は、研磨布２を用いて研磨対象１を研磨したときに、研磨対象１の平坦度ＳＦＱＲ（μｍ）が、０．０９以下になるまで、研磨布２を加湿、加温するものである。   In the eleventh aspect of the invention, when the apparatus invention of the ninth aspect and the tenth aspect of the invention is carried out, when the polishing object 1 is polished using the polishing cloth 2, the control means has a flatness SFQR (μm) of the polishing object 1. The polishing cloth 2 is humidified and heated until 0.09 or less.

第１２発明は、研磨装置１００に貼着されて研磨対象１を研磨するために用いられる研磨布２であって、加湿、加温され、吸水性が高められた状態にされている研磨布２であることを特徴とするものである。   The twelfth invention is a polishing cloth 2 that is attached to the polishing apparatus 100 and used to polish the object 1 to be polished, and is a polishing cloth 2 that has been humidified and heated to have increased water absorption. It is characterized by being.

第１３発明は、第１２発明の研磨布２が、研磨対象１を研磨したときに、研磨対象１の平坦度ＳＦＱＲ（μｍ）が、０．０９以下になることを特徴とするものである。   The thirteenth invention is characterized in that when the polishing cloth 2 of the twelfth invention polishes the polishing object 1, the flatness SFQR (μm) of the polishing object 1 becomes 0.09 or less.

本発明によれば、研磨装置１００を稼働させて研磨加工を行う前に、研磨布２を加湿、加温しておき、研磨布２の吸水性を高めた状態にしておくようにしたので、その研磨布２を研磨加工に使用した場合、即座に研磨用スラリが高い吸水性をもって研磨布２に吸水され、ある程度の時間、研磨加工に使用した研磨布２と同様に、ある程度の量の研磨用スラリが含有された状態になる。このため、研磨加工に未使用の研磨布２を研磨加工（本格稼働）に使用しても、研磨加工開始直後から、シリコンウェーハ１の平坦度は、基準レベル以下（ＳＦＱＲ（μｍ）が、０．０９以下）で安定する。これにより、ダミーランニングを行うことなく、研磨装置１００を本格稼働することができるようになり、生産効率が向上する。また、ダミーランニングを個々の研磨布毎に行う必要がなくなるので、素材の損失が無くなり、品質確認のためのコストが飛躍的に低減する。   According to the present invention, the polishing cloth 2 is humidified and heated before the polishing apparatus 100 is operated and polished, so that the water absorption of the polishing cloth 2 is increased. When the polishing cloth 2 is used for polishing, the polishing slurry is immediately absorbed by the polishing cloth 2 with high water absorption, and a certain amount of polishing is performed for a certain period of time as in the polishing cloth 2 used for polishing. It will be in the state where the slurry was contained. For this reason, even if the polishing cloth 2 that is not used for polishing is used for polishing (full operation), the flatness of the silicon wafer 1 is below the reference level (SFQR (μm) is 0 immediately after the start of polishing). .09 or less). As a result, the polishing apparatus 100 can be fully operated without performing dummy running, and the production efficiency is improved. Further, since there is no need to perform dummy running for each polishing cloth, there is no loss of material, and the cost for quality confirmation is drastically reduced.

また、特に、第３発明、第４発明、第５発明、第９発明、第１０発明によれば、研磨装置１００の定盤１０１、１０２に研磨布２を貼着した状態で研磨布２を加湿、加温するようにしたので、研磨装置１００に元々装着されている既存の機構、構成部品（冷却水路１０６、１０８、リンス液噴射ノズル１１０、研磨用スラリ通路１０７）を利用して、加湿、加温を行うことができる。このため加湿、加温のために新たに追加する設備、コストを最小限に抑えることができる。   In particular, according to the third invention, the fourth invention, the fifth invention, the ninth invention, and the tenth invention, the polishing cloth 2 is attached to the surface plates 101 and 102 of the polishing apparatus 100 while the polishing cloth 2 is adhered. Since the humidification and heating are performed, the existing mechanism and components (cooling water channels 106 and 108, the rinse liquid injection nozzle 110, and the polishing slurry passage 107) originally attached to the polishing apparatus 100 are used to humidify. Can be warmed. For this reason, the equipment newly added for humidification and heating, and cost can be minimized.

以下、図面を参照して本発明の実施の形態について説明する。   Embodiments of the present invention will be described below with reference to the drawings.

なお、以下の各実施例では、図１を用いて既に説明した両面研磨装置１００で研磨布２を用いてシリコンウェーハ１の研磨加工が行われる場合を想定して説明する。   In each of the following embodiments, the case where the polishing process of the silicon wafer 1 is performed using the polishing cloth 2 in the double-side polishing apparatus 100 already described with reference to FIG. 1 will be described.

なお、実施例の研磨布２は、不織布タイプの研磨布であり、ロデール社のＳＵＢＡシリーズを使用した。   In addition, the polishing cloth 2 of an Example is a nonwoven fabric type polishing cloth, and used the SUBA series of Rodel.

（第１実施例）
この第１実施例の方法は、図１の研磨装置１００の上定盤１０１、下定盤１０２に研磨布２を貼着する前に、研磨布２を加湿、加温して、研磨布２の吸水性を高めておくようにしておき、この吸水性が高められた研磨布２を研磨装置１００に貼着し、この研磨布２を用いて研磨対象であるシリコンウェーハ１を研磨するという研磨方法である。 (First embodiment)
In the method of the first embodiment, the polishing cloth 2 is humidified and heated before the polishing cloth 2 is attached to the upper surface plate 101 and the lower surface plate 102 of the polishing apparatus 100 of FIG. A polishing method in which the water absorption is increased, the polishing cloth 2 with increased water absorption is attached to the polishing apparatus 100, and the silicon wafer 1 to be polished is polished using the polishing cloth 2 It is.

この方法を実施するに際して好適な加湿・加温装置は、図３に示す加湿・加温用容器２０である。図３に示す加湿・加温用容器２０内に研磨布２を収容するとともに容器２０内を加湿、加温された雰囲気にして、研磨布２の吸水性を高めた。   A humidifying / heating device suitable for carrying out this method is a humidifying / heating container 20 shown in FIG. The polishing cloth 2 was accommodated in the humidification / heating container 20 shown in FIG. 3 and the container 20 was humidified and heated to increase the water absorption of the polishing cloth 2.

図３（ａ）、（ｂ）はそれぞれ、加湿・加温用容器２０を斜視図、側面図にて示している。   FIGS. 3A and 3B show the humidification / heating container 20 in a perspective view and a side view, respectively.

容器２０は、研磨布２が金属汚染しないように、非金属の材料で構成することが望ましい。特に、研磨布２が収納される部位（容器内側、内装部品）については、金属材料を使用しないことが望ましい。たとえばＰＶＣ（塩化ビニル）によって容器２０を構成することが望ましい。ただし、非金属の材料といえども、切削加工等で形成された部品に関しては、切粉、バリによって発生する粉塵、パーティクルが研磨布２を汚染しないように、切粉、バリは確実に除去しておくことが望ましい。なお、容器２０は、内部の研磨布２の状態を観察できるように、透明の材料で形成することが望ましい。   The container 20 is preferably made of a non-metallic material so that the polishing cloth 2 is not contaminated with metal. In particular, it is desirable not to use a metal material for a portion (inner container, interior part) in which the polishing cloth 2 is stored. For example, it is desirable that the container 20 is made of PVC (vinyl chloride). However, even if it is a non-metallic material, the chips and burrs must be removed with certainty so that the dust and particles generated by the chips and burrs will not contaminate the polishing cloth 2 even if they are formed by cutting. It is desirable to keep it. The container 20 is preferably formed of a transparent material so that the state of the internal polishing cloth 2 can be observed.

容器２０の筐体２１は、透明のＰＶＣで構成されている。   The casing 21 of the container 20 is made of transparent PVC.

筐体２１には、移動用ハンドル２２、蒸気吸気口（蛇腹ホース）２３、湿度、温度計２４、移動用キャスタ２５、ドレインバルブ２６、開閉扉２７が設けられている。   The housing 21 is provided with a moving handle 22, a steam intake port (bellows hose) 23, a humidity, a thermometer 24, a moving caster 25, a drain valve 26, and an open / close door 27.

移動用ハンドル２２、移動用キャスタ２５は、容器２０を把持して、移動させるために設けられている。   The moving handle 22 and the moving caster 25 are provided for gripping and moving the container 20.

蒸気吸気口２３には、加湿・加温器３０の蒸気吹きだし口３０ａが連通している。加湿・加温器３０では、湿度８０％以上、温度４０゜Ｃ以上の蒸気が生成されて、蒸気吹きだし口３０ａから吹き出され、蒸気吸気口２３を介して筐体２１内に吸い込まれ、筐体２１内が加湿、加温雰囲気（湿度８０％以上、温度４０゜Ｃ以上）にされる。湿度、温度計２４は、筐体２１の内部の湿度、温度を測定して、筐体２１内の湿度、温度を管理するために設けられている。   A steam outlet 30 a of the humidifier / heater 30 communicates with the steam inlet 23. In the humidifier / heater 30, steam having a humidity of 80% or more and a temperature of 40 ° C. or more is generated, blown from the steam outlet 30 a, and sucked into the casing 21 through the steam inlet 23. 21 is humidified and heated (humidity 80% or more, temperature 40 ° C. or more). The humidity and thermometer 24 is provided to measure the humidity and temperature inside the housing 21 and manage the humidity and temperature inside the housing 21.

開閉扉２７は、筐体２１内に研磨布２を出し入れするために設けられている。   The open / close door 27 is provided to put the polishing cloth 2 in and out of the housing 21.

筐体２１の内部には、複数枚の仕切り板２８が設けられている。隣り合う仕切り板２８同士によって、収納室２９が形成される。開閉扉２７が開かれて、収納室２９にそれぞれ、研磨布２が収納される。これにより容器２０内に、複数枚の研磨布２が収容される。仕切り板２８は、各仕切り板２８間で蒸気を循環させ、蒸気が筐体２１内で偏在しないように、多数の孔が穿設されたパンチングプレートで構成されている。仕切り板２８は、透明のＰＶＣで構成されている。   A plurality of partition plates 28 are provided inside the housing 21. A storage chamber 29 is formed by the adjacent partition plates 28. The opening / closing door 27 is opened, and the polishing cloth 2 is stored in the storage chamber 29. As a result, a plurality of polishing cloths 2 are accommodated in the container 20. The partition plate 28 is configured by a punching plate in which a large number of holes are formed so that steam is circulated between the partition plates 28 and the steam is not unevenly distributed in the housing 21. The partition plate 28 is made of transparent PVC.

ドレインバルブ２６は、手動のバルブであり、必要時に開いて、筐体２１内の蒸気によって生成された水を排出するために設けられている。   The drain valve 26 is a manual valve, and is provided to open when necessary and to discharge water generated by the steam in the housing 21.

以上のように構成された容器２０内を湿度８０％以上、温度４０゜Ｃ以上の加湿、加温雰囲気に調整して、この加湿、加温雰囲気で研磨布２を８時間、暴露した。これは、シリコンウェーハ１の平坦度ＳＦＱＲ（μｍ）でいうと、後述するように、０．０９以下にするために必要な湿度、温度、時間の条件である。   The inside of the container 20 configured as described above was adjusted to a humidified and heated atmosphere with a humidity of 80% or higher and a temperature of 40 ° C. or higher, and the polishing pad 2 was exposed in this humidified and heated atmosphere for 8 hours. In terms of the flatness SFQR (μm) of the silicon wafer 1, this is the conditions of humidity, temperature, and time necessary to make it 0.09 or less, as will be described later.

容器２０内に研磨布８を収容してから、８時間経過後に、開閉扉２７を開いて、筐体２１内から研磨布２を取り出して、研磨布２を研磨装置１００の上定盤１０１、下定盤１０２に貼着した。そして、研磨加工を行い、研磨布２を用いて研磨されたシリコンウェーハ１の平坦度ＳＦＱＲ（μｍ）を１バッチ毎に測定して、平坦度ＳＦＱＲ（μｍ）が基準レベル（０．０９μｍ）に到達するまでのバッチ数（ランニング時間）を計測した。なお、比較のために、容器２０内に８時間、研磨布２を収容した場合以外に、０時間（容器２０内に研磨布２を収容しなかった場合）、２時間（容器２０内に２時間、研磨布２を収容した場合）、４時間（容器２０内に４時間、研磨布２を収容した場合）、１２時間（容器２０内に１２時間、研磨布２を収容した場合）、２４時間（容器２０内に２４時間、研磨布２を収容した場合）それぞれについても、同様に、シリコンウェーハ１の平坦度ＳＦＱＲ（μｍ）が基準レベル（０．０９μｍ）に到達するまでのバッチ数（ランニング時間）を計測した。   After 8 hours have passed since the polishing cloth 8 was accommodated in the container 20, the door 27 is opened, the polishing cloth 2 is taken out of the housing 21, and the polishing cloth 2 is attached to the upper surface plate 101 of the polishing apparatus 100, Affixed to the lower surface plate 102. Then, polishing is performed and the flatness SFQR (μm) of the silicon wafer 1 polished using the polishing cloth 2 is measured for each batch, and the flatness SFQR (μm) is set to the reference level (0.09 μm). The number of batches (running time) to reach was measured. For comparison, in addition to the case where the polishing cloth 2 is accommodated in the container 20 for 8 hours, 0 hour (when the polishing cloth 2 is not accommodated in the container 20), 2 hours (2 in the container 20) 24 hours (when the abrasive cloth 2 is accommodated), 4 hours (when the abrasive cloth 2 is accommodated in the container 20 for 4 hours), 12 hours (when the abrasive cloth 2 is accommodated within the container 20), 24 hours Similarly, for each time (when the polishing cloth 2 is accommodated in the container 20 for 24 hours), the number of batches until the flatness SFQR (μm) of the silicon wafer 1 reaches the reference level (0.09 μm) ( Running time) was measured.

図４は、容器内収容時間（加湿・加温雰囲気暴露時間）と、シリコンウェーハ平坦度ＳＦＱＲ（μｍ）が基準レベル（０．０９μｍ）に到達するまでのバッチ数（ランニング時間）との関係を示している。   FIG. 4 shows the relationship between the container storage time (humidification / heating atmosphere exposure time) and the number of batches (running time) until the silicon wafer flatness SFQR (μm) reaches the reference level (0.09 μm). Show.

図４からわかるように、容器内収容時間（加湿・加温雰囲気暴露時間）が大きくなるに伴い、徐々に、シリコンウェーハ１の平坦度ＳＦＱＲ（μｍ）が基準レベル（０．０９μｍ）に到達するまでのバッチ数（ランニング時間）が低下していくのがわかる。シリコンウェーハ１の平坦度ＳＦＱＲ（μｍ）が基準レベル（０．０９μｍ）に到達するまでのバッチ数（ランニング時間）は、「８時間容器２０内に収容」という条件のときに、はじめて「０」になり、以後、容器内収容時間を増加しても、バッチ数は、「０」でサチュレートしているのがわかる。   As can be seen from FIG. 4, the flatness SFQR (μm) of the silicon wafer 1 gradually reaches the reference level (0.09 μm) as the housing time (humidification / heated atmosphere exposure time) increases. It can be seen that the number of batches (running time) decreases. The number of batches (running time) until the flatness SFQR (μm) of the silicon wafer 1 reaches the reference level (0.09 μm) is “0” for the first time under the condition of “accommodating in the container 20 for 8 hours”. From this point on, it can be seen that the number of batches is saturating at “0” even if the container storage time is increased.

以上の計測結果から、研磨布２を、温度４０℃以上、湿度８０％以上の加湿、加温雰囲気で８時間以上、研磨布２を暴露すれば、その研磨布２を研磨加工に使用した場合、最初のバッチからシリコンウェーハ１の平坦度ＳＦＱＲ（μｍ）を基準レベル以下の平坦度で研磨することができるということがわかった。   From the above measurement results, if the polishing cloth 2 is exposed to the temperature of 40 ° C. or higher and the humidity is 80% or higher in a humidified and heated atmosphere for 8 hours or longer, the polishing cloth 2 is used for polishing. From the first batch, it was found that the flatness SFQR (μm) of the silicon wafer 1 can be polished with a flatness below the reference level.

図５は、図２に対応するグラフであり、研磨加工のバッチ数と、シリコンウェーハ１の平坦度ＳＦＱＲ（μｍ）との関係を示すグラフである。図５の横軸は、研磨布２を定盤１０１、１０２に貼着してからのバッチ数であり、縦軸は、本実施例の装置（容器２０）を用いて本実施例の方法（研磨布２を、温度４０℃以上、湿度８０％以上の加湿、加温雰囲気で８時間以上、研磨布２を暴露）を実施した各研磨布２Ａ′、２Ｂ′、２Ｃ′それぞれを用いて研磨加工されたシリコンウェーハ１の平坦度ＳＦＱＲ（μｍ）である。   FIG. 5 is a graph corresponding to FIG. 2, and is a graph showing the relationship between the number of polishing batches and the flatness SFQR (μm) of the silicon wafer 1. The horizontal axis of FIG. 5 is the number of batches after the polishing cloth 2 is adhered to the surface plates 101 and 102, and the vertical axis is the method of the present embodiment using the apparatus (container 20) of the present embodiment ( Polishing the polishing cloth 2 using each of the polishing cloths 2A ′, 2B ′, and 2C ′ in which the polishing cloth 2 was exposed to humidification at a temperature of 40 ° C. or higher and humidity of 80% or higher and exposed to a heated atmosphere for 8 hours or longer. The flatness SFQR (μm) of the processed silicon wafer 1.

図５に示すように、各研磨布２Ａ′、２Ｂ′、２Ｃ′いずれの場合も、研磨布２を定盤１０１、１０２に貼着した時点、つまりバッチ数がゼロの時点ですでにシリコンウェーハ１の平坦度ＳＦＱＲは基準レベル０．０９（μｍ）以下にあり、バッチ数を増加しても基準レベル０．０９（μｍ）以下を維持していることがわかる。図２の従来技術のグラフと比較してもわかるように、本実施例によれば、各試料の研磨布２Ａ′、２Ｂ′、２Ｃ′で平坦度にバラツキがみられなく、研磨加工に未使用の研磨布２を研磨加工（本格稼働）に使用しても、研磨加工開始直後から、シリコンウェーハ１の平坦度は、基準レベル以下（ＳＦＱＲ（μｍ）が、０．０９以下）で安定している。このため、本実施例によれば、ダミーランニングを行うことなく、研磨装置１００を本格稼働することができるようになり、生産効率が向上する。また、ダミーランニングを個々の研磨布毎に行う必要がなくなるので、素材の損失が無くなり、品質確認のためのコストが飛躍的に低減する。   As shown in FIG. 5, in each of the polishing cloths 2A ′, 2B ′, and 2C ′, the silicon wafer is already present when the polishing cloth 2 is adhered to the surface plates 101 and 102, that is, when the number of batches is zero. It can be seen that the flatness SFQR of 1 is below the reference level 0.09 (μm), and is maintained below the reference level 0.09 (μm) even when the number of batches is increased. As can be seen from comparison with the graph of the prior art in FIG. 2, according to this example, the flatness of the polishing cloths 2A ′, 2B ′, and 2C ′ of each sample does not vary, and polishing is not performed. Even if the polishing cloth 2 used is used for polishing processing (full-scale operation), the flatness of the silicon wafer 1 is stable at a reference level or less (SFQR (μm) is 0.09 or less) immediately after the start of polishing processing. ing. For this reason, according to the present embodiment, the polishing apparatus 100 can be fully operated without performing dummy running, and the production efficiency is improved. Further, since there is no need to perform dummy running for each polishing cloth, there is no loss of material, and the cost for quality confirmation is drastically reduced.

（第２実施例）
この第２実施例の方法は、図１の両面研磨装置１００の上定盤１０１、下定盤１０２に研磨布２が貼着された状態で、研磨布２を加湿、加温して、研磨布２の吸水性を高めておき、この吸水性が高められた研磨布２を用いて、研磨対象であるシリコンウェーハ１を研磨するという研磨方法である。 (Second embodiment)
In the method of the second embodiment, the polishing cloth 2 is humidified and heated while the polishing cloth 2 is adhered to the upper surface plate 101 and the lower surface plate 102 of the double-side polishing apparatus 100 of FIG. 2 is a polishing method in which the silicon wafer 1 to be polished is polished using the polishing cloth 2 with the increased water absorption.

加湿、加温の方法は、研磨装置１００の上定盤１０１、下１０２を加温するとともに、研磨布２に向けて常温（約２５゜Ｃ）の水を流すことで、研磨布２の吸水性を高めるというものである。   The humidifying and warming methods include heating the upper surface plate 101 and the lower 102 of the polishing apparatus 100 and flowing water at room temperature (about 25 ° C.) toward the polishing cloth 2 to absorb the water of the polishing cloth 2. It is to increase sex.

本実施例の方法に好適な装置構成は、図１に示すように、両面研磨装置１００に、元々装着されている既存の加温手段、流水手段（冷却水路１０６、１０８、リンス液噴射ノズル１１０、研磨用スラリ通路１０７）を利用して、研磨布２の加湿、加温を行うという装置構成である。かかる加温手段、流水手段の制御は、手動制御でもよく、自動制御でもよい。たとえば、両面研磨装置１００に既存のコントローラ（図示せず）にインストールされるべきプログラムを改変して、研磨加工前に、加温手段と流水手段を作動させるプログラムに書き換えておき、加温手段、流水手段の制御を自動制御で行ってもよい。
本実施例では、研磨加工が行われる前に、予め冷却水路１０６、１０８に温水（クーラント）を流した。これにより上定盤１０１、下定盤１０２が加温され、上定盤１０１、下定盤１０２に貼着されている研磨布２が温度３５゜Ｃ以上まで加温された。なお、冷却水路１０６、１０８に流れるクーラントは、前回の研磨加工の予熱によって既に温まっている。加温が不足する場合には、ヒータ等の加熱手段によって、冷却水路１０６、１０６に流れるクーラントを適温まで上昇させてもよい。このような加温処理と同時に、研磨加工が行われる前に、予め上定盤１０１の研磨用スラリ通路１０７にリンス液（純水）を流した。これにより研磨布２に向けて常温の水が流水され、研磨布２が水に浸された状態（加湿状態）にされた。なお、研磨布２全体に水がいきわたるように、上定盤１０１、下定盤１０２を回転させながら流水することが望ましい。研磨用スラリ通路１０７から研磨布２に向けて流水する代わりに、リンス液噴射ノズル１１０から常温のリンス液（純水）を噴射させてもよい。この場合も研磨布２に向けて流水され、研磨布２が水に浸された状態（加湿状態）にされる。 As shown in FIG. 1, the apparatus configuration suitable for the method of the present embodiment is the existing heating means and flowing means (cooling channels 106 and 108, rinse liquid injection nozzle 110) originally installed in the double-side polishing apparatus 100. The polishing slurry passage 107) is used to humidify and heat the polishing cloth 2. The control of the heating means and the flowing water means may be manual control or automatic control. For example, a program to be installed in an existing controller (not shown) in the double-side polishing apparatus 100 is modified and rewritten into a program for operating the heating means and the flowing water means before polishing, You may control a water flow means by automatic control.
In the present embodiment, warm water (coolant) was previously flowed into the cooling water channels 106 and 108 before the polishing process was performed. As a result, the upper surface plate 101 and the lower surface plate 102 were heated, and the polishing cloth 2 adhered to the upper surface plate 101 and the lower surface plate 102 was heated to a temperature of 35 ° C. or higher. Note that the coolant flowing in the cooling water channels 106 and 108 has already been heated by the preheating of the previous polishing process. When the heating is insufficient, the coolant flowing in the cooling water channels 106 and 106 may be raised to an appropriate temperature by heating means such as a heater. Simultaneously with the heating process, before the polishing process is performed, a rinsing liquid (pure water) is passed through the polishing slurry passage 107 of the upper surface plate 101 in advance. As a result, room temperature water was poured toward the polishing cloth 2 and the polishing cloth 2 was immersed in water (humidified state). In addition, it is desirable to flow water while rotating the upper surface plate 101 and the lower surface plate 102 so that water spreads over the entire polishing cloth 2. Instead of flowing water from the polishing slurry passage 107 toward the polishing cloth 2, a normal temperature rinse liquid (pure water) may be sprayed from the rinse liquid spray nozzle 110. Also in this case, water is poured toward the polishing cloth 2 so that the polishing cloth 2 is immersed in water (humidified state).

このように研磨加工前に、予め研磨布２を温度３５゜Ｃ以上の加温状態にするとともに、研磨布２に向けて流水して研磨布２を加湿状態にした。かかる加温状態、加湿状態のまま１時間以上、放置し、その後、流水を停止した。これは、シリコンウェーハ１の平坦度ＳＦＱＲ（μｍ）でいうと、０．０９以下にするために必要な湿度、温度、時間の条件である。その後、研磨用キャリア１０にシリコンウェーハ１を装填して、研磨加工を行った。すると、研磨加工直後から各バッチ毎にシリコンウェーハ１の平坦度ＳＦＱＲ（μｍ）を測定したところ、前述した図５と同様の測定結果が得られた。すなわち、本実施例においてもダミーランニングを行うことなく、研磨装置１００を本格稼働することができるようになり、生産効率が向上することになる。また、ダミーランニングを個々の研磨布毎に行う必要がなくなるので、素材の損失が無くなり、品質確認のためのコストが飛躍的に低減する。   Thus, before polishing, the polishing cloth 2 was previously heated to a temperature of 35 ° C. or higher, and the polishing cloth 2 was made wet by flowing water toward the polishing cloth 2. The heated and humidified state was left for 1 hour or longer, and then the running water was stopped. In terms of the flatness SFQR (μm) of the silicon wafer 1, this is the conditions of humidity, temperature, and time necessary to make it 0.09 or less. Thereafter, the silicon wafer 1 was loaded into the polishing carrier 10 and polishing was performed. Then, when the flatness SFQR (μm) of the silicon wafer 1 was measured for each batch immediately after the polishing process, the same measurement results as in FIG. 5 described above were obtained. That is, also in this embodiment, the polishing apparatus 100 can be fully operated without performing dummy running, and the production efficiency is improved. Further, since there is no need to perform dummy running for each polishing cloth, there is no loss of material, and the cost for quality confirmation is drastically reduced.

さらに、本実施例によれば、両面研磨装置１００に、元々装着されている既存の機構、構成部品（冷却水路１０６、１０８、リンス液噴射ノズル１１０あるいは研磨用スラリ通路１０７）を利用して、加湿、加温を行うようにしたので、加湿、加温のために新たに追加する設備、コストを最小限に抑えることができるという効果が得られる。   Furthermore, according to the present embodiment, the existing mechanism and components (cooling water channels 106 and 108, the rinse liquid injection nozzle 110 or the polishing slurry passage 107) originally attached to the double-side polishing apparatus 100 are used, Since humidification and warming are performed, it is possible to obtain an effect that equipment newly added for humidification and warming and cost can be minimized.

（第３実施例）
この第３実施例の方法は、第２実施例と同様に、図１の両面研磨装置１００の上定盤１０１、下定盤１０２に研磨布２が貼着された状態で、研磨布２を加湿、加温して、研磨布２の吸水性を高めておき、この吸水性が高められた研磨布２を用いて、研磨対象であるシリコンウェーハ１を研磨するという研磨方法である。 (Third embodiment)
As in the second embodiment, the method of the third embodiment humidifies the polishing cloth 2 with the polishing cloth 2 attached to the upper surface plate 101 and the lower surface plate 102 of the double-side polishing apparatus 100 of FIG. This is a polishing method in which the water absorption of the polishing cloth 2 is increased by heating, and the silicon wafer 1 to be polished is polished using the polishing cloth 2 with increased water absorption.

加湿、加温の方法は、研磨布２に向けて温水（３５゜Ｃ以上）を流すことで、研磨布２の吸水性を高めるというものである。   The method of humidification and warming is to increase the water absorption of the polishing cloth 2 by flowing warm water (35 ° C. or more) toward the polishing cloth 2.

本実施例の方法に好適な装置構成は、図１に示すように、両面研磨装置１００に、元々装着されている既存の流水手段（リンス液噴射ノズル１１０、研磨用スラリ通路１０７）を利用して、研磨布２の加湿、加温を行うという装置構成である。ただし、リンス液噴射ノズル１１０、研磨用スラリ通路１０７を流れるリンス液（純水）は、常温であるため、ヒータ等の加熱手段を用いて、リンス液を加温する必要がある。かかる温水流水手段の制御は、手動制御でもよく、自動制御でもよい。たとえば、両面研磨装置１００に既存のコントローラ（図示せず）にインストールされるべきプログラムを改変して、研磨加工前に、温水流水手段を作動させるプログラムに書き換えておき、温水流水手段の制御を自動制御で行ってもよい。
本実施例では、研磨加工が行われる前に、予め上定盤１０１の研磨用スラリ通路１０７に、３５゜Ｃ以上まで加温されたリンス液（純水）を流した。これにより研磨布２に向けて温水（３５゜Ｃ以上）が流水され、研磨布２が温水に浸された状態（加温、加湿状態）にされた。なお、研磨布２全体に温水がいきわたるように、上定盤１０１、下定盤１０２を回転させながら温水流水することが望ましい。研磨用スラリ通路１０７から研磨布２に向けて温水流水する代わりに、リンス液噴射ノズル１１０から加温されたリンス液（純水）を噴射させてもよい。この場合も研磨布２に向けて温水流水され、研磨布２が温水に浸された状態（加温、加湿状態）にされる。 As shown in FIG. 1, an apparatus configuration suitable for the method of the present embodiment uses existing flowing water means (rinse liquid injection nozzle 110, polishing slurry passage 107) originally attached to the double-side polishing apparatus 100. Thus, the configuration is such that the polishing cloth 2 is humidified and heated. However, since the rinsing liquid (pure water) flowing through the rinsing liquid injection nozzle 110 and the polishing slurry passage 107 is at room temperature, it is necessary to heat the rinsing liquid using heating means such as a heater. The control of the hot water flowing means may be manual control or automatic control. For example, a program to be installed in an existing controller (not shown) in the double-side polishing apparatus 100 is modified and rewritten with a program for operating the hot water running means before the polishing process to automatically control the hot water running means. You may carry out by control.
In this embodiment, before the polishing process is performed, a rinsing liquid (pure water) that has been heated to 35 ° C. or higher is passed through the polishing slurry passage 107 of the upper surface plate 101 in advance. As a result, warm water (35 ° C. or more) was allowed to flow toward the polishing cloth 2, and the polishing cloth 2 was immersed in the warm water (warming, humidified state). In addition, it is desirable to flow warm water while rotating the upper surface plate 101 and the lower surface plate 102 so that the hot water spreads over the entire polishing cloth 2. Instead of flowing warm water from the polishing slurry passage 107 toward the polishing cloth 2, a rinse liquid (pure water) heated from the rinse liquid spray nozzle 110 may be sprayed. Also in this case, warm water is poured toward the polishing cloth 2 so that the polishing cloth 2 is immersed in the warm water (warming, humidified state).

このように研磨加工前に、予め研磨布２に向けて温水を流水して、研磨布２を温度３５゜Ｃ以上の加温、加湿状態にした。かかる加温状態、加湿状態のまま１時間以上、放置し、その後、温水の流水を停止した。これは、シリコンウェーハ１の平坦度ＳＦＱＲ（μｍ）でいうと、０．０９以下にするために必要な湿度、温度、時間の条件である。その後、研磨用キャリア１０にシリコンウェーハ１を装填して、研磨加工を行った。すると、研磨加工直後から各バッチ毎にシリコンウェーハ１の平坦度ＳＦＱＲ（μｍ）を測定したところ、前述した図５と同様の測定結果が得られた。すなわち、本実施例においてもダミーランニングを行うことなく、研磨装置１００を本格稼働することができるようになり、生産効率が向上することになる。また、ダミーランニングを個々の研磨布毎に行う必要がなくなるので、素材の損失が無くなり、品質確認のためのコストが飛躍的に低減する。   In this way, before polishing, warm water was poured in advance toward the polishing cloth 2 so that the polishing cloth 2 was heated to a temperature of 35 ° C. or higher and humidified. This warmed state and humidified state were left for 1 hour or longer, and then the warm water flow was stopped. In terms of the flatness SFQR (μm) of the silicon wafer 1, this is the conditions of humidity, temperature, and time necessary to make it 0.09 or less. Thereafter, the silicon wafer 1 was loaded into the polishing carrier 10 and polishing was performed. Then, when the flatness SFQR (μm) of the silicon wafer 1 was measured for each batch immediately after the polishing process, the same measurement results as in FIG. 5 described above were obtained. That is, also in this embodiment, the polishing apparatus 100 can be fully operated without performing dummy running, and the production efficiency is improved. Further, since there is no need to perform dummy running for each polishing cloth, there is no loss of material, and the cost for quality confirmation is drastically reduced.

さらに、本実施例によれば、両面研磨装置１００に、元々装着されている既存の機構、構成部品（リンス液噴射ノズル１１０あるいは研磨用スラリ通路１０７）を利用して、加湿、加温を行うようにしたので、加湿、加温のために新たに追加する設備、コストを最小限に抑えることができるという効果が得られる。   Furthermore, according to the present embodiment, humidification and heating are performed using the existing mechanism and components (the rinse liquid spray nozzle 110 or the polishing slurry passage 107) that are originally mounted on the double-side polishing apparatus 100. Since it did in this way, the effect that the equipment newly added for humidification and heating, and cost can be suppressed to the minimum is acquired.

なお、以上の実施例では、研磨布が両面研磨加工装置に使用される場合を想定したが、本発明は、研磨布が片面研磨装置を使用される場合にも適用することができる。   In the above embodiment, it is assumed that the polishing cloth is used in a double-side polishing apparatus, but the present invention can also be applied to a case where the polishing cloth uses a single-side polishing apparatus.

また、以上の実施例では、シリコンウェーハを研磨対象とする場合を想定したが、本発明は、シリコンウェーハ以外の研磨対象、たとえばガラスを研磨加工する場合にも当然に適用することができる。   Moreover, although the case where a silicon wafer was made into the grinding | polishing object was assumed in the above Example, naturally this invention can be applied also when grinding | polishing the grinding | polishing object other than a silicon wafer, for example, glass.

また、以上の説明では、研磨工程で研磨装置に研磨布が使用される場合を想定したが、本発明は、ラッピング工程でラッピング装置に研磨布が使用される場合にも適用することができる。本明細書で「研磨」の概念の中には、「ラッピング」も含まれているものとする。   In the above description, it is assumed that a polishing cloth is used in the polishing apparatus in the polishing process, but the present invention can also be applied to a case where the polishing cloth is used in the wrapping apparatus in the lapping process. In the present specification, the concept of “polishing” includes “lapping”.

図１（ａ）、（ｂ）はそれぞれ、シリコンウェーハの両面を研磨する両面研磨装置の側面図、斜視図である。1A and 1B are a side view and a perspective view, respectively, of a double-side polishing apparatus that polishes both sides of a silicon wafer. 図２は、従来技術を説明する図で、研磨加工のバッチ数と、シリコンウェーハの平坦度ＳＦＱＲ（μｍ）との関係を示すグラフである。FIG. 2 is a diagram for explaining the prior art, and is a graph showing the relationship between the number of polishing batches and the flatness SFQR (μm) of the silicon wafer. 図３（ａ）、（ｂ）はそれぞれ、加湿・加温用容器の斜視図、側面図である。FIGS. 3A and 3B are a perspective view and a side view of the humidifying / warming container, respectively. 図４は、容器内収容時間（加湿・加温雰囲気暴露時間）と、シリコンウェーハ平坦度ＳＦＱＲ（μｍ）が基準レベル（０．０９μｍ）に到達するまでのバッチ数（ランニング時間）との関係を示したグラフである。FIG. 4 shows the relationship between the container storage time (humidification / heating atmosphere exposure time) and the number of batches (running time) until the silicon wafer flatness SFQR (μm) reaches the reference level (0.09 μm). It is the shown graph. 図２は、本実施例を説明する図で、研磨加工のバッチ数と、シリコンウェーハの平坦度ＳＦＱＲ（μｍ）との関係を示すグラフである。FIG. 2 is a diagram for explaining the present embodiment and is a graph showing the relationship between the number of polishing batches and the flatness SFQR (μm) of the silicon wafer.

符号の説明Explanation of symbols

１ シリコンウェーハ ２ 研磨布 ２０ 加湿・加温用容器 ３０ 加湿・加温器 １００ 両面研磨装置 １０２ 上定盤 １０３ 下定盤 １０６、１０８ 冷却水路 １０７ 研磨用スラリ通路 １１０ リンス液噴射ノズル   DESCRIPTION OF SYMBOLS 1 Silicon wafer 2 Polishing cloth 20 Humidification / heating container 30 Humidification / heating device 100 Double-side polishing apparatus 102 Upper surface plate 103 Lower surface plate 106,108 Cooling water channel 107 Slurry channel for polishing 110 Rinse liquid injection nozzle

Claims (13)

研磨装置に研磨布を貼着する前に、研磨布を加湿、加温して、研磨布の吸水性を高める加湿・加温工程と、
吸水性が高められた研磨布を研磨装置に貼着し、この研磨布を用いて研磨対象を研磨する研磨工程と
を含むことを特徴とする研磨布を用いた研磨方法。 Before attaching the polishing cloth to the polishing device, humidifying and heating the polishing cloth to increase the water absorption of the polishing cloth,
A polishing method using a polishing cloth, comprising: attaching a polishing cloth having improved water absorption to a polishing apparatus, and polishing the object to be polished using the polishing cloth. 加湿・加温工程は、
容器内に研磨布を収容するとともに容器内を加湿、加温された雰囲気にして、研磨布の吸水性を高める工程であること
を特徴とする請求項１記載の研磨布を用いた研磨方法。 The humidification / heating process
The polishing method using the polishing cloth according to claim 1, wherein the polishing cloth is contained in the container and the container is humidified and heated to increase the water absorption of the polishing cloth. 研磨装置の定盤に研磨布が貼着された状態で、研磨布を加湿、加温して、研磨布の吸水性を高める加湿・加温工程と、
吸水性が高められた研磨布を用いて、研磨対象を研磨する研磨工程と
を含むことを特徴とする研磨布を用いた研磨方法。 In a state where the polishing cloth is attached to the surface plate of the polishing apparatus, humidifying and heating the polishing cloth to increase the water absorption of the polishing cloth,
A polishing method using a polishing cloth, comprising: a polishing step of polishing an object to be polished using a polishing cloth having improved water absorption. 加湿・加温工程は、
研磨装置の定盤を加温するとともに、研磨布に向けて水を流すことで、研磨布の吸水性を高める工程であること
を特徴とする請求項３記載の研磨布を用いた研磨方法。 The humidification / heating process
The polishing method using the polishing cloth according to claim 3, which is a step of increasing the water absorption of the polishing cloth by heating the surface plate of the polishing apparatus and flowing water toward the polishing cloth. 加湿・加温工程は、
研磨布に向けて温水を流すことで、研磨布の吸水性を高める工程であること
を特徴とする請求項３記載の研磨布を用いた研磨方法。 The humidification / heating process
The polishing method using the polishing cloth according to claim 3, wherein the polishing cloth is a step of increasing the water absorption of the polishing cloth by flowing warm water toward the polishing cloth. 加湿・加温工程では、
研磨布を用いて研磨対象を研磨したときに、研磨対象の平坦度ＳＦＱＲ（μｍ）が、０．０９以下になるまで、研磨布を加温、加湿すること
を特徴とする請求項１〜５記載の研磨布を用いた研磨方法。 In the humidification / heating process,
The polishing cloth is heated and humidified until the flatness SFQR (μm) of the polishing object becomes 0.09 or less when the polishing object is polished using the polishing cloth. A polishing method using the polishing cloth as described. 容器内部に研磨布が収容されるとともに容器内部が加湿、加温された雰囲気にされて、研磨布の吸水性を高める処理が行われること
を特徴とする研磨布の加湿・加温用容器。 A container for humidifying and heating a polishing cloth, characterized in that the polishing cloth is contained in the container and the inside of the container is humidified and heated to perform a treatment for increasing the water absorption of the polishing cloth. 研磨布を用いて研磨対象を研磨したときに、研磨対象の平坦度ＳＦＱＲ（μｍ）が、０．０９以下になるまで、容器内に研磨布が収容されること
を特徴とする請求項７記載の研磨布の加湿・加温用容器。 The polishing cloth is accommodated in the container until the flatness SFQR (μm) of the polishing object becomes 0.09 or less when the polishing object is polished using the polishing cloth. A container for humidifying and warming abrasive cloth. 研磨装置に、
研磨布が貼着された定盤を加温する加温手段と、
研磨布に向けて水を流す流水手段と、
研磨装置で研磨布を用いて研磨対象を研磨する前に、予め加温手段と、流水手段を作動させて研磨布を加湿、加温して研磨布の吸水性を高める制御手段と
を備えたこと
を特徴とする研磨布を用いた研磨装置。 In the polishing equipment,
A heating means for heating the surface plate to which the polishing cloth is adhered;
Water flowing means for flowing water toward the polishing cloth;
Before polishing the object to be polished with the polishing cloth in the polishing apparatus, a heating means and a control means for increasing the water absorption of the polishing cloth by operating the flowing water means to humidify and heat the polishing cloth in advance. A polishing apparatus using a polishing cloth. 研磨装置に、
研磨布に向けて温水を流す温水流水手段と、
研磨装置で研磨布を用いて研磨対象を研磨する前に、予め温水流水手段を作動させて研磨布を加湿、加温して研磨布の吸水性を高める制御手段と
を備えたこと
を特徴とする研磨布を用いた研磨装置。 In the polishing equipment,
Hot water flowing means for flowing warm water toward the polishing cloth;
Before polishing the object to be polished with the polishing cloth in the polishing apparatus, the apparatus is provided with a control means for increasing the water absorption of the polishing cloth by operating the warm water flowing means in advance to humidify and heat the polishing cloth. Polishing device using polishing cloth. 制御手段は、
研磨布を用いて研磨対象を研磨したときに、研磨対象の平坦度ＳＦＱＲ（μｍ）が、０．０９以下になるまで、研磨布を加湿、加温すること
を特徴とする請求項９、１０記載の研磨布を用いた研磨装置。 The control means
The polishing cloth is humidified and heated until the flatness SFQR (μm) of the polishing object becomes 0.09 or less when the polishing object is polished using the polishing cloth. A polishing apparatus using the described polishing cloth. 研磨装置に貼着されて研磨対象を研磨するために用いられる研磨布であって、
加湿、加温され、吸水性が高められた状態にされていること
を特徴とする研磨布。 A polishing cloth that is attached to a polishing apparatus and used to polish an object to be polished,
A polishing cloth characterized by being humidified and heated to have an increased water absorption. 研磨対象を研磨したときに、研磨対象の平坦度ＳＦＱＲ（μｍ）が、０．０９以下になること
を特徴とする請求項１２記載の研磨布。 The polishing cloth according to claim 12, wherein when the object to be polished is polished, the flatness SFQR (μm) of the object to be polished is 0.09 or less.
JP2006144032A 2006-05-24 2006-05-24 Polishing method using abrasive cloth, humidification for abrasive cloth, heating container, polishing device using abrasive cloth, and abrasive cloth Withdrawn JP2007313587A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006144032A JP2007313587A (en) 2006-05-24 2006-05-24 Polishing method using abrasive cloth, humidification for abrasive cloth, heating container, polishing device using abrasive cloth, and abrasive cloth

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006144032A JP2007313587A (en) 2006-05-24 2006-05-24 Polishing method using abrasive cloth, humidification for abrasive cloth, heating container, polishing device using abrasive cloth, and abrasive cloth

Publications (1)

Publication Number Publication Date
JP2007313587A true JP2007313587A (en) 2007-12-06

Family

ID=38847912

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006144032A Withdrawn JP2007313587A (en) 2006-05-24 2006-05-24 Polishing method using abrasive cloth, humidification for abrasive cloth, heating container, polishing device using abrasive cloth, and abrasive cloth

Country Status (1)

Country Link
JP (1) JP2007313587A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4000802A1 (en) * 2020-11-17 2022-05-25 Siltronic AG Method for polishing semiconductor wafers on both sides between a lower polishing plate and an upper polishing plate
EP4212280A1 (en) * 2022-01-12 2023-07-19 Siltronic AG Method of applying a polishing cloth to a polishing plate

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4000802A1 (en) * 2020-11-17 2022-05-25 Siltronic AG Method for polishing semiconductor wafers on both sides between a lower polishing plate and an upper polishing plate
EP4212280A1 (en) * 2022-01-12 2023-07-19 Siltronic AG Method of applying a polishing cloth to a polishing plate

Similar Documents

Publication Publication Date Title
US10424496B2 (en) Substrate treating method
JP5714449B2 (en) Liquid processing apparatus, liquid processing method, and storage medium
US6200414B1 (en) Circulation system for supplying chemical for manufacturing semiconductor devices and circulating method thereof
TWI701086B (en) Substrate processing method and substrate processing apparatus
US20140231013A1 (en) Substrate processing apparatus
KR102569631B1 (en) Chemical mechanical polishing apparatus and control method thereof
KR101864001B1 (en) Substrate processing method and substrate processing apparatus
JP2013045972A5 (en)
JP2018056293A (en) Substrate processing apparatus and processing liquid supply method
KR20120139573A (en) Substrate processing method and substrate processing unit
TW201448013A (en) Process and apparatus for treating surfaces of wafer-shaped articles
JP2009212301A (en) Substrate processing method and apparatus
JP7493325B2 (en) Substrate Processing Equipment
US20190126428A1 (en) Heat exchanger for regulating temperature of polishing surface of polishing pad, polishing apparatus having such heat exchanger, polishing method for substrate using such heat exchanger, and computer-readable storage medium storing a program for regulating temperature of polishing surface of polishing pad
JP2004111668A (en) Method and apparatus for processing substrate
JP2008207282A (en) Polishing device
JP6719271B2 (en) A table for holding an object to be processed and a processing apparatus having the table
KR20160042786A (en) Buffing apparatus and substrate processing device
KR101884640B1 (en) Chemical mechanical polishing system and method thereof
JP2007313587A (en) Polishing method using abrasive cloth, humidification for abrasive cloth, heating container, polishing device using abrasive cloth, and abrasive cloth
JP7241589B2 (en) Substrate processing method and substrate processing apparatus
JP2016111265A (en) Buff processing device and substrate processing device
JP2007180309A (en) Polishing device and method therefor
JP3559149B2 (en) Substrate processing equipment
JPH10303155A (en) Polishing method and polishing device

Legal Events

Date Code Title Description
A300 Withdrawal of application because of no request for examination

Free format text: JAPANESE INTERMEDIATE CODE: A300

Effective date: 20090804