JP2007281447A - 太陽電池 - Google Patents
太陽電池 Download PDFInfo
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- JP2007281447A JP2007281447A JP2007066516A JP2007066516A JP2007281447A JP 2007281447 A JP2007281447 A JP 2007281447A JP 2007066516 A JP2007066516 A JP 2007066516A JP 2007066516 A JP2007066516 A JP 2007066516A JP 2007281447 A JP2007281447 A JP 2007281447A
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- 239000004065 semiconductor Substances 0.000 claims abstract description 81
- 239000000758 substrate Substances 0.000 claims abstract description 79
- 238000004519 manufacturing process Methods 0.000 description 22
- 238000000034 method Methods 0.000 description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 230000005684 electric field Effects 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000010297 mechanical methods and process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000000053 physical method Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/035281—Shape of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
- H01L31/022458—Electrode arrangements specially adapted for back-contact solar cells for emitter wrap-through [EWT] type solar cells, e.g. interdigitated emitter-base back-contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/03529—Shape of the potential jump barrier or surface barrier
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Energy (AREA)
- Sustainable Development (AREA)
- Photovoltaic Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
【解決手段】第1部分および第2部分が設けられた半導体基板と、半導体基板の前面に形成され、第1部分において半導体基板の後面まで延長されるエミッタ部と、エミッタ部と電気的に連結し、半導体基板の後面側に形成される第1電極と、半導体基板と電気的に連結し、半導体基板の後面側に形成される第2電極とを備え、第1部分の厚さは、第2部分の厚さよりも薄い太陽電池が提供される。
【選択図】図1
Description
10c 貫通孔
12 エミッタ部
14 反射防止膜
16、18 電極
16a、18a ペースト
20 後面電界層
Claims (6)
- 第1部分および第2部分が設けられた半導体基板と;
前記半導体基板の前面に形成され、前記第1部分において前記半導体基板の後面まで延長されるエミッタ部と;
前記エミッタ部と電気的に連結し、前記半導体基板の後面側に形成される第1電極と;
前記半導体基板と電気的に連結し、前記半導体基板の後面側に形成される第2電極と;
を備え、
前記第1部分の厚さは、前記第2部分の厚さよりも薄いことを特徴とする、太陽電池。 - 前記第1部分には前記第1電極が形成され、
前記第2部分には前記第2電極が形成されることを特徴とする、請求項1に記載の太陽電池。 - 前記半導体基板の前記第1部分と、前記第2部分との境界に段差が形成されることを特徴とする、請求項1に記載の太陽電池。
- 前記第1部分に対応して、前記半導体基板の後面に凹部が形成されることを特徴とする、請求項1に記載の太陽電池。
- 前記凹部内には前記第1電極が形成されることを特徴とする、請求項4に記載の太陽電池。
- 前記第1部分には前記第1電極と連結する貫通孔が形成され、
前記エミッタ部は、前記貫通孔に沿って前記後面まで伸びることを特徴とする、請求項1に記載の太陽電池。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2006-0031356 | 2006-04-06 | ||
KR1020060031356A KR101212198B1 (ko) | 2006-04-06 | 2006-04-06 | 태양 전지 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007281447A true JP2007281447A (ja) | 2007-10-25 |
JP4727607B2 JP4727607B2 (ja) | 2011-07-20 |
Family
ID=38289116
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007066516A Expired - Fee Related JP4727607B2 (ja) | 2006-04-06 | 2007-03-15 | 太陽電池 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8558104B2 (ja) |
EP (1) | EP1843399B1 (ja) |
JP (1) | JP4727607B2 (ja) |
KR (1) | KR101212198B1 (ja) |
CN (1) | CN101051656A (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100946683B1 (ko) * | 2008-02-28 | 2010-03-12 | 주식회사 티지솔라 | 태양전지 및 그 제조방법 |
WO2010110510A1 (en) * | 2009-03-25 | 2010-09-30 | Lg Electronics Inc. | Solar cell and fabrication method thereof |
KR100999797B1 (ko) | 2009-03-31 | 2010-12-08 | 엘지이노텍 주식회사 | 태양광 발전장치 및 이의 제조방법 |
WO2011021755A1 (en) * | 2009-08-18 | 2011-02-24 | Lg Electronics Inc. | Solar cell |
JP2011210802A (ja) * | 2010-03-29 | 2011-10-20 | Napura:Kk | 太陽電池 |
Families Citing this family (19)
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JP2008294080A (ja) * | 2007-05-22 | 2008-12-04 | Sanyo Electric Co Ltd | 太陽電池セル及び太陽電池セルの製造方法 |
US7964499B2 (en) * | 2008-05-13 | 2011-06-21 | Samsung Electronics Co., Ltd. | Methods of forming semiconductor solar cells having front surface electrodes |
KR100997113B1 (ko) * | 2008-08-01 | 2010-11-30 | 엘지전자 주식회사 | 태양전지 및 그의 제조방법 |
KR101108474B1 (ko) | 2009-05-14 | 2012-01-31 | 엘지전자 주식회사 | 태양 전지 |
KR100984700B1 (ko) * | 2009-06-04 | 2010-10-01 | 엘지전자 주식회사 | 태양 전지 및 그 제조 방법 |
KR101032624B1 (ko) | 2009-06-22 | 2011-05-06 | 엘지전자 주식회사 | 태양 전지 및 그 제조 방법 |
CN102576764A (zh) * | 2009-10-15 | 2012-07-11 | Lg伊诺特有限公司 | 太阳能电池设备及其制造方法 |
US8115097B2 (en) | 2009-11-19 | 2012-02-14 | International Business Machines Corporation | Grid-line-free contact for a photovoltaic cell |
NL2004310C2 (en) * | 2010-02-26 | 2011-08-30 | Stichting Energie | Method of fabrication of a back-contacted photovoltaic cell, and back-contacted photovoltaic cell made by such a method. |
US8790957B2 (en) * | 2010-03-04 | 2014-07-29 | Sunpower Corporation | Method of fabricating a back-contact solar cell and device thereof |
KR101896740B1 (ko) * | 2011-09-09 | 2018-09-07 | 헤레우스 프레셔스 메탈즈 노스 아메리카 콘쇼호켄 엘엘씨 | 은 태양 전지 접점 |
US9263611B2 (en) | 2011-11-17 | 2016-02-16 | Solar Junction Corporation | Method for etching multi-layer epitaxial material |
WO2013152104A1 (en) * | 2012-04-06 | 2013-10-10 | Solar Junction Corporation | Multi-junction solar cells with through-via contacts |
KR20130128946A (ko) * | 2012-05-18 | 2013-11-27 | 한화케미칼 주식회사 | 백-컨택형 태양 전지용 반도체 기판 및 이의 제조 방법 |
KR101363103B1 (ko) * | 2012-06-29 | 2014-02-18 | 주식회사 신성솔라에너지 | 태양전지 및 그 제조방법 |
US9142615B2 (en) | 2012-10-10 | 2015-09-22 | Solar Junction Corporation | Methods and apparatus for identifying and reducing semiconductor failures |
US9147779B2 (en) * | 2013-05-01 | 2015-09-29 | The Boeing Company | Solar cell by-pass diode with improved metal contacts |
DE102019006097A1 (de) * | 2019-08-29 | 2021-03-04 | Azur Space Solar Power Gmbh | Passivierungsverfahren für ein Durchgangsloch einer Halbleiterscheibe |
CN113206164A (zh) * | 2021-04-26 | 2021-08-03 | 宜兴市昱元能源装备技术开发有限公司 | 一种铸造纵列多结光伏电池 |
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2006
- 2006-04-06 KR KR1020060031356A patent/KR101212198B1/ko active IP Right Grant
-
2007
- 2007-03-15 JP JP2007066516A patent/JP4727607B2/ja not_active Expired - Fee Related
- 2007-03-26 US US11/727,355 patent/US8558104B2/en active Active
- 2007-04-05 EP EP07105715.2A patent/EP1843399B1/en not_active Expired - Fee Related
- 2007-04-06 CN CNA2007100967664A patent/CN101051656A/zh active Pending
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100946683B1 (ko) * | 2008-02-28 | 2010-03-12 | 주식회사 티지솔라 | 태양전지 및 그 제조방법 |
WO2010110510A1 (en) * | 2009-03-25 | 2010-09-30 | Lg Electronics Inc. | Solar cell and fabrication method thereof |
US9087956B2 (en) | 2009-03-25 | 2015-07-21 | Lg Electronics Inc. | Solar cell and fabrication method thereof |
KR100999797B1 (ko) | 2009-03-31 | 2010-12-08 | 엘지이노텍 주식회사 | 태양광 발전장치 및 이의 제조방법 |
WO2011021755A1 (en) * | 2009-08-18 | 2011-02-24 | Lg Electronics Inc. | Solar cell |
US8263857B2 (en) | 2009-08-18 | 2012-09-11 | Lg Electronics Inc. | Solar cell |
JP2011210802A (ja) * | 2010-03-29 | 2011-10-20 | Napura:Kk | 太陽電池 |
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KR20070099938A (ko) | 2007-10-10 |
CN101051656A (zh) | 2007-10-10 |
US20070235075A1 (en) | 2007-10-11 |
KR101212198B1 (ko) | 2012-12-13 |
US8558104B2 (en) | 2013-10-15 |
JP4727607B2 (ja) | 2011-07-20 |
EP1843399A2 (en) | 2007-10-10 |
EP1843399A3 (en) | 2011-02-23 |
EP1843399B1 (en) | 2016-02-03 |
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