JP2007266616A - 五酸化タンタル層を用いた集積回路用コンデンサを製造するための方法 - Google Patents
五酸化タンタル層を用いた集積回路用コンデンサを製造するための方法 Download PDFInfo
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- JP2007266616A JP2007266616A JP2007108964A JP2007108964A JP2007266616A JP 2007266616 A JP2007266616 A JP 2007266616A JP 2007108964 A JP2007108964 A JP 2007108964A JP 2007108964 A JP2007108964 A JP 2007108964A JP 2007266616 A JP2007266616 A JP 2007266616A
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- tantalum pentoxide
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- metal
- pentoxide layer
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- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 title claims abstract description 46
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 title claims abstract description 46
- 239000003990 capacitor Substances 0.000 title claims abstract description 28
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 229910052751 metal Inorganic materials 0.000 claims abstract description 63
- 239000002184 metal Substances 0.000 claims abstract description 63
- 238000000034 method Methods 0.000 claims abstract description 27
- 230000003647 oxidation Effects 0.000 claims abstract description 16
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 16
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 14
- 239000004065 semiconductor Substances 0.000 claims abstract description 10
- 150000004767 nitrides Chemical class 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 238000000137 annealing Methods 0.000 claims abstract description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 14
- 238000000151 deposition Methods 0.000 claims description 12
- 229910052757 nitrogen Inorganic materials 0.000 claims description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 238000005121 nitriding Methods 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 abstract description 18
- 239000010937 tungsten Substances 0.000 abstract description 18
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract description 12
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 abstract description 6
- 229910045601 alloy Inorganic materials 0.000 abstract description 5
- 239000000956 alloy Substances 0.000 abstract description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052715 tantalum Inorganic materials 0.000 abstract description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052719 titanium Inorganic materials 0.000 abstract description 4
- 239000010936 titanium Substances 0.000 abstract description 4
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052741 iridium Inorganic materials 0.000 abstract description 3
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052697 platinum Inorganic materials 0.000 abstract description 3
- 229910052707 ruthenium Inorganic materials 0.000 abstract description 3
- 230000001590 oxidative effect Effects 0.000 abstract 1
- 230000008021 deposition Effects 0.000 description 6
- -1 tungsten nitride Chemical class 0.000 description 6
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B99/00—Subject matter not provided for in other groups of this subclass
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02183—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing tantalum, e.g. Ta2O5
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
- H01L21/0234—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31604—Deposition from a gas or vapour
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Abstract
【解決手段】半導体基板に隣接して(上面に)、窒化金属の表面部分を有する第一の金属電極を形成するステップ44;窒化金属の表面部分の上に、五酸化タンタル層を、温度をこの第一の金属電極の酸化温度より低く維持しながら、形成するステップ48;五酸化タンタル層を遠隔プラズマアニールリングするステップ50;および、五酸化タンタル層に隣接して第二の電極を形成するステップ52、から構成される。五酸化タンタル層を形成するステップ48は、好ましくは、五酸化タンタルを、約500℃より低い温度にて、化学蒸着することによって行なわれる。これによって、金属の酸化が防止され、高品質の五酸化タンタルが形成される。前記第一の金属電極の金属は、チタン、タングステン、タンタル、プラチナ、ルテニウム、イリジウム、もしくはこれらの合金の少なくとも一つから成る。
【選択図】図2
Description
本発明は、全て、1999年1月12日付けで、本発明と譲受人を同一とする係属中の暫定特許出願第60/115,530号と関連するために、これらについても参照されたい。
20 コンデンサ
23、24 絶縁層
25 半導体基板
26 バイヤ(接続孔)
30 第一の金属層(第一の金属電極)
31 窒化金属(窒化タングステン)層
33 五酸化タンタル層
34 第二の電極
Claims (10)
- 集積回路のコンデンサを製造するための方法であって、
半導体基板に隣接して第一の金属電極を形成するステップ;
前記第一の金属電極の上に五酸化タンタル層を、温度を前記第一の金属電極の酸化温度より低く維持しながら、形成するステップ;
前記五酸化タンタル層の少なくとも一度の遠隔プラズマアニールを、温度を前記第一の金属電極の酸化温度より低く維持しながら、遂行するステップ;および
前記アニーリングのステップの後に、前記五酸化タンタル層に隣接して第二の電極を、温度を前記第一の金属電極の酸化温度より低く維持しながら形成するステップを含むことを特徴とする方法。 - 前記五酸化タンタル層を形成するステップが、これを、約500℃より低い温度にて、化学蒸着することから成ることを特徴とする請求項1の方法。
- 前記五酸化タンタル層を形成するステップが、これを、約400℃より低い温度にて、化学蒸着することから成ることを特徴とする請求項1の方法。
- 前記五酸化タンタル層を形成するステップが、さらに、前記五酸化タンタル層を、約10分より短い時間にて、形成することから成ることを特徴とする請求項1の方法。
- 前記五酸化タンタル層を形成するステップが、さらに、前記五酸化タンタル層を、約3トル(Torr)より大きな圧力にて、形成することから成ることを特徴とする請求項1の方法。
- 前期少なくとも一度の遠隔プラズマアニールを遂行するステップが、前記五酸化タンタル層を、純粋な窒素から成る遠隔プラズマに露出するステップを含むことを特徴とする請求項1の方法。
- 前記少なくとも一度の遠隔プラズマアニールを遂行するステップが、さらに、前記純粋な窒素による遠隔プラズマアニールの後に、前記五酸化タンタル層を、酸素と窒素から成る遠隔プラズマに露出するステップを含むことを特徴とする請求項6の方法。
- さらに:
前記半導体基板に隣接して少なくとも一つの絶縁層を形成するステップ;および
前記少なくとも一つの絶縁層内に開口を形成するステップを含み;
前記第一の金属電極を形成するステップが、前記第一の金属電極を、前記少なくとも一つの絶縁層内の前記開口と整合するように形成することから成ることを特徴とする請求項1の方法。 - 前記第一の金属電極を形成するステップが、第一の金属層を形成するステップと、この金属層の上側表面部分を窒化させるステップから成ることを特徴とする請求項1の方法。
- 前記第一の金属電極を形成するステップが、第一の金属層を堆積するステップと、この上に窒化金属層を、温度を前記第一の金属の酸化温度より低く維持しながら、堆積するステップから成ることを特徴とする請求項1の方法。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11553099P | 1999-01-12 | 1999-01-12 | |
US60/115530 | 1999-01-12 | ||
US09/345,556 US6265260B1 (en) | 1999-01-12 | 1999-06-30 | Method for making an integrated circuit capacitor including tantalum pentoxide |
US09/345556 | 1999-06-30 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP6224A Division JP2000208744A (ja) | 1999-01-12 | 2000-01-12 | 五酸化タンタル層を用いた集積回路用コンデンサを製造するための方法 |
Publications (2)
Publication Number | Publication Date |
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JP2007266616A true JP2007266616A (ja) | 2007-10-11 |
JP5247059B2 JP5247059B2 (ja) | 2013-07-24 |
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JP6224A Pending JP2000208744A (ja) | 1999-01-12 | 2000-01-12 | 五酸化タンタル層を用いた集積回路用コンデンサを製造するための方法 |
JP2007108964A Expired - Fee Related JP5247059B2 (ja) | 1999-01-12 | 2007-04-18 | 五酸化タンタル層を用いた集積回路用コンデンサを製造するための方法 |
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JP6224A Pending JP2000208744A (ja) | 1999-01-12 | 2000-01-12 | 五酸化タンタル層を用いた集積回路用コンデンサを製造するための方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US6265260B1 (ja) |
EP (1) | EP1020901B1 (ja) |
JP (2) | JP2000208744A (ja) |
KR (1) | KR20000053452A (ja) |
DE (1) | DE60023573T2 (ja) |
TW (1) | TW459381B (ja) |
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US9859215B1 (en) | 2016-08-17 | 2018-01-02 | International Business Machines Corporation | Formation of advanced interconnects |
US9716063B1 (en) | 2016-08-17 | 2017-07-25 | International Business Machines Corporation | Cobalt top layer advanced metallization for interconnects |
US10115670B2 (en) | 2016-08-17 | 2018-10-30 | International Business Machines Corporation | Formation of advanced interconnects including set of metal conductor structures in patterned dielectric layer |
CN106298947B (zh) * | 2016-10-12 | 2020-02-07 | 中国科学院微电子研究所 | 一种双栅InGaAs PMOS场效应晶体管 |
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- 2000-01-06 DE DE60023573T patent/DE60023573T2/de not_active Expired - Lifetime
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Also Published As
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DE60023573T2 (de) | 2006-07-27 |
JP2000208744A (ja) | 2000-07-28 |
TW459381B (en) | 2001-10-11 |
EP1020901A3 (en) | 2000-12-06 |
EP1020901A2 (en) | 2000-07-19 |
KR20000053452A (ko) | 2000-08-25 |
EP1020901B1 (en) | 2005-11-02 |
US6265260B1 (en) | 2001-07-24 |
DE60023573D1 (de) | 2005-12-08 |
JP5247059B2 (ja) | 2013-07-24 |
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