JP2007250847A - Method of manufacturing semiconductor device - Google Patents

Method of manufacturing semiconductor device Download PDF

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Publication number
JP2007250847A
JP2007250847A JP2006072550A JP2006072550A JP2007250847A JP 2007250847 A JP2007250847 A JP 2007250847A JP 2006072550 A JP2006072550 A JP 2006072550A JP 2006072550 A JP2006072550 A JP 2006072550A JP 2007250847 A JP2007250847 A JP 2007250847A
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squeegee
semiconductor device
manufacturing
semiconductor wafer
thickness
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JP4720560B2 (en
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Masayasu Kizaki
正康 木崎
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Casio Computer Co Ltd
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Casio Computer Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods

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Abstract

<P>PROBLEM TO BE SOLVED: To suppress a variation in the film thickness of a sealing film composed of a liquid resin applied by screen printing on a semiconductor wafer having a plurality of columnar electrodes even if the size of the semiconductor wafer increases. <P>SOLUTION: As a squeegee 25 for screen printing, a rectangular stainless steel plate is used having a thickness of 1-4 mm. The squeegee 25 composed of the stainless steel plate has high linearity at the end, and has an extremely small amount of the deformation of the end in a direction perpendicular to the thickness direction. Therefore, even if an opening 24 of a printing mask 23 increases in size, there is no possibility that the end of the squeegee 25 is pushed out into the opening 24 of the printing mask 23. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

この発明は半導体装置の製造方法に関する。   The present invention relates to a method for manufacturing a semiconductor device.

従来のＣＳＰ(chip size package)と呼ばれる半導体装置の製造方法には、半導体ウエハ上に複数の柱状電極を形成し、柱状電極を含む半導体ウエハ上に、スクリーン印刷により液状樹脂を塗布して、封止膜をその厚さが柱状電極の高さよりもやや厚くなるように形成し、硬化後の封止膜の上面側を適宜に研磨して除去することにより、柱状電極の上面を露出させるとともに、この露出された柱状電極の上面を含む封止膜の上面を平坦化するようにした方法がある（例えば、特許文献１参照）。   In a conventional method for manufacturing a semiconductor device called CSP (chip size package), a plurality of columnar electrodes are formed on a semiconductor wafer, a liquid resin is applied to the semiconductor wafer including the columnar electrodes by screen printing, and sealed. The stop film is formed so that its thickness is slightly thicker than the height of the columnar electrode, and the upper surface side of the cured sealing film is appropriately polished and removed to expose the upper surface of the columnar electrode, There is a method in which the upper surface of the sealing film including the exposed upper surface of the columnar electrode is planarized (see, for example, Patent Document 1).

特許第３２１６６３７号公報（図９、図１０）Japanese Patent No. 3216637 (FIGS. 9 and 10)

ところで、上記スクリーン印刷で使用される印刷マスクは、厚さが柱状電極の高さよりもやや厚いステンレス鋼板に半導体ウエハのサイズよりもやや小さい円形状の開口部が形成されたものからなっている。また、上記スクリーン印刷で使用されるスキージは、一般的に、ウレタンゴムによって形成されている。   By the way, the printing mask used in the screen printing is made of a stainless steel plate having a thickness that is slightly thicker than the height of the columnar electrode, and a circular opening that is slightly smaller than the size of the semiconductor wafer. Moreover, the squeegee used in the screen printing is generally made of urethane rubber.

一方、最近では、半導体ウエハのサイズが大きくなる傾向にあり、８インチ、１２インチのものもある。したがって、印刷マスクの開口部のサイズもそれに応じて大きくなる。しかるに、ウレタンゴムからなるスキージでは、印刷マスクに押し付けられるため、印刷マスクとの接触部で弾性変形するが、印刷マスクの開口部のサイズが大きくなると、印刷マスクの開口部に対応する部分で当該開口部内に押し出されてしまう。この結果、半導体ウエハ上にスクリーン印刷により塗布された液状樹脂からなる封止膜の膜厚が半導体ウエハの中心部で最も薄く、外周部に向かうに従って漸次厚くなり、大きくばらついてしまうという問題がある。   On the other hand, recently, the size of semiconductor wafers tends to increase, and there are 8 inch and 12 inch wafers. Therefore, the size of the opening of the printing mask is increased accordingly. However, in a squeegee made of urethane rubber, it is pressed against the print mask, so it is elastically deformed at the contact portion with the print mask, but when the size of the print mask opening increases, the portion corresponding to the opening of the print mask It will be pushed into the opening. As a result, there is a problem that the film thickness of the sealing film made of liquid resin applied on the semiconductor wafer by screen printing is the thinnest at the center of the semiconductor wafer and gradually increases toward the outer periphery, resulting in large variations. .

そこで、この発明は、半導体ウエハのサイズが大きくなっても、半導体ウエハ上にスクリーン印刷により塗布される液状樹脂からなる封止膜の膜厚がばらつきにくいようにすることができる半導体装置の製造方法を提供することを目的とする。   SUMMARY OF THE INVENTION Accordingly, the present invention provides a method for manufacturing a semiconductor device that can prevent variations in the thickness of a sealing film made of a liquid resin applied on a semiconductor wafer by screen printing even when the size of the semiconductor wafer increases. The purpose is to provide.

この発明は、上記目的を達成するため、複数の柱状電極を有する半導体ウエハ上にスクリーン印刷により液状樹脂を塗布して封止膜を形成するとき、金属板からなるスキージを用いることを特徴とするものである。   In order to achieve the above object, the present invention uses a squeegee made of a metal plate when a liquid resin is applied to a semiconductor wafer having a plurality of columnar electrodes by screen printing to form a sealing film. Is.

この発明によれば、金属板からなるスキージの先端の直線性が高く、且つ、当該先端の厚さ方向に直交する方向の変形量が極めて小さいので、印刷マスクの開口部のサイズが大きくなっても、スキージの先端が印刷マスクの開口部内に押し出されることがなく、したがって半導体ウエハのサイズが大きくなっても、半導体ウエハ上にスクリーン印刷により塗布される液状樹脂からなる封止膜の膜厚がばらつきにくいようにすることができる。   According to this invention, since the linearity of the tip of the squeegee made of a metal plate is high and the amount of deformation in the direction perpendicular to the thickness direction of the tip is extremely small, the size of the opening of the printing mask becomes large. However, the tip of the squeegee is not pushed out into the opening of the printing mask, so that even if the size of the semiconductor wafer is increased, the film thickness of the sealing film made of a liquid resin applied by screen printing on the semiconductor wafer is increased. It can be made difficult to vary.

図１はこの発明の製造方法により製造された半導体装置の一例の断面図を示す。この半導体装置はシリコン基板１を備えている。シリコン基板１の上面には所定の機能の集積回路（図示せず）が設けられ、上面周辺部にはアルミニウム系金属等からなる複数の接続パッド２が集積回路に接続されて設けられている。   FIG. 1 is a sectional view showing an example of a semiconductor device manufactured by the manufacturing method of the present invention. This semiconductor device includes a silicon substrate 1. An integrated circuit (not shown) having a predetermined function is provided on the upper surface of the silicon substrate 1, and a plurality of connection pads 2 made of aluminum-based metal or the like are provided on the periphery of the upper surface so as to be connected to the integrated circuit.

接続パッド２の中央部を除くシリコン基板１の上面には酸化シリコン等からなる絶縁膜３が設けられ、接続パッド２の中央部は絶縁膜３に設けられた開口部４を介して露出されている。絶縁膜３の上面にはポリイミド系樹脂等からなる保護膜５が設けられている。絶縁膜３の開口部４に対応する部分における保護膜５には開口部６が設けられている。   An insulating film 3 made of silicon oxide or the like is provided on the upper surface of the silicon substrate 1 excluding the central portion of the connection pad 2, and the central portion of the connection pad 2 is exposed through an opening 4 provided in the insulating film 3. Yes. A protective film 5 made of polyimide resin or the like is provided on the upper surface of the insulating film 3. An opening 6 is provided in the protective film 5 at a portion corresponding to the opening 4 of the insulating film 3.

保護膜５の上面には銅等からなる下地金属層７が設けられている。下地金属層７の上面全体には銅からなる配線８が設けられている。下地金属層７を含む配線８の一端部は、絶縁膜３および保護膜５の開口部４、６を介して接続パッド２に接続されている。配線８の接続パッド部上面には銅からなる柱状電極９が設けられている。配線８を含む保護膜５の上面にはエポキシ系樹脂等からなる封止膜１０がその上面が柱状電極９の上面と面一となるように設けられている。柱状電極９の上面には半田ボール１１が設けられている。   A base metal layer 7 made of copper or the like is provided on the upper surface of the protective film 5. A wiring 8 made of copper is provided on the entire upper surface of the base metal layer 7. One end of the wiring 8 including the base metal layer 7 is connected to the connection pad 2 through the openings 4 and 6 of the insulating film 3 and the protective film 5. A columnar electrode 9 made of copper is provided on the upper surface of the connection pad portion of the wiring 8. A sealing film 10 made of an epoxy resin or the like is provided on the upper surface of the protective film 5 including the wiring 8 so that the upper surface is flush with the upper surface of the columnar electrode 9. A solder ball 11 is provided on the upper surface of the columnar electrode 9.

次に、この半導体装置の製造方法の一例について説明する。まず、図２に示すように、ウエハ状態のシリコン基板（以下、半導体ウエハ２１という）上に接続パッド２、絶縁膜３、保護膜５、下地金属層７、配線８および柱状電極９が形成されたものを用意する。なお、図２において、符号２２で示す領域は半導体ウエハ２１の外周部の非半導体装置形成領域である。   Next, an example of a method for manufacturing this semiconductor device will be described. First, as shown in FIG. 2, the connection pad 2, the insulating film 3, the protective film 5, the base metal layer 7, the wiring 8 and the columnar electrode 9 are formed on a silicon substrate (hereinafter referred to as a semiconductor wafer 21). Prepare something. In FIG. 2, a region indicated by reference numeral 22 is a non-semiconductor device formation region on the outer periphery of the semiconductor wafer 21.

次に、図３に示すように、保護膜５の外周部（非半導体装置形成領域２２）の上面に印刷マスク２３を位置合わせして配置する。印刷マスク２３は、厚さが柱状電極９の高さよりもやや厚いステンレス鋼板に半導体ウエハ２１のサイズよりもやや小さい円形状の開口部２４が形成されたものからなっている。   Next, as shown in FIG. 3, the print mask 23 is positioned and arranged on the upper surface of the outer peripheral portion (non-semiconductor device formation region 22) of the protective film 5. The printing mask 23 is made of a stainless steel plate having a thickness that is slightly thicker than the height of the columnar electrode 9 and a circular opening 24 that is slightly smaller than the size of the semiconductor wafer 21.

次に、図４に示すように、後で詳述するスキージ２５を用いて、印刷マスク２３の開口部２４内において配線８および柱状電極９を含む保護膜５の上面にエポキシ系樹脂等からなる液状樹脂を塗布し、この塗布された液状樹脂を硬化させることにより、封止膜１０をその厚さが柱状電極９の高さよりもやや厚くなるように形成する。したがって、この状態では、柱状電極９の上面は封止膜１０によって覆われている。   Next, as shown in FIG. 4, the upper surface of the protective film 5 including the wiring 8 and the columnar electrode 9 is made of an epoxy resin or the like in the opening 24 of the printing mask 23 using a squeegee 25 described in detail later. By applying a liquid resin and curing the applied liquid resin, the sealing film 10 is formed so that its thickness is slightly larger than the height of the columnar electrode 9. Therefore, in this state, the upper surface of the columnar electrode 9 is covered with the sealing film 10.

次に、封止膜１０の上面側を適宜に研磨して除去することにより、図５に示すように、柱状電極９の上面を露出させるとともに、この露出された柱状電極９の上面を含む封止膜１０の上面を平坦化する。次に、図６に示すように、柱状電極９の上面に半田ボール１１を形成する。次に、半導体ウエハ２１等をダイシングラインに沿って切断すると、図１に示す半導体装置が複数個得られる。   Next, by appropriately polishing and removing the upper surface side of the sealing film 10, the upper surface of the columnar electrode 9 is exposed and the sealing including the exposed upper surface of the columnar electrode 9 as shown in FIG. The upper surface of the stop film 10 is flattened. Next, as shown in FIG. 6, solder balls 11 are formed on the upper surface of the columnar electrode 9. Next, when the semiconductor wafer 21 and the like are cut along a dicing line, a plurality of semiconductor devices shown in FIG. 1 are obtained.

ここで、スキージ２５の一例について、図７に示す側面図を参照して説明する。スキージ２５は、厚さ１〜４ｍｍの長方形状のステンレス鋼板（金属板）によって形成されている。スキージ２５の先端は、フライス加工により真直度０．０２ｍｍ程度とされた平面となっている。スキージ２５の上部はアルミニウム等からなる一対のスキージホルダ２６に挟持され、ボルト２７およびナット２８により一体化されている。   Here, an example of the squeegee 25 will be described with reference to a side view shown in FIG. The squeegee 25 is formed of a rectangular stainless steel plate (metal plate) having a thickness of 1 to 4 mm. The tip of the squeegee 25 is a flat surface with a straightness of about 0.02 mm by milling. The upper part of the squeegee 25 is sandwiched between a pair of squeegee holders 26 made of aluminum or the like, and integrated with bolts 27 and nuts 28.

そして、このステンレス鋼板からなるスキージ２５では、その先端の直線性が高く、且つ、当該先端の厚さ方向に直交する方向の変形量が極めて小さいので、印刷マスク２３の開口部２４のサイズが大きくなっても、その先端が印刷マスク２３の開口部２４内に押し出されることがなく、したがって半導体ウエハ２１のサイズが大きくなっても、半導体ウエハ２１上にスクリーン印刷により塗布された液状樹脂からなる封止膜１０の膜厚がばらつきにくいようにすることができる。   In the squeegee 25 made of this stainless steel plate, the linearity of the tip is high, and the amount of deformation in the direction perpendicular to the thickness direction of the tip is extremely small, so the size of the opening 24 of the printing mask 23 is large. Even if the size of the semiconductor wafer 21 is increased, the end of the tip is not pushed into the opening 24 of the printing mask 23. Therefore, even when the size of the semiconductor wafer 21 is increased, the sealing made of a liquid resin applied on the semiconductor wafer 21 by screen printing is used. The film thickness of the stop film 10 can be made difficult to vary.

次に、このステンレス鋼板からなるスキージ２５を用いた封止膜形成の実験結果について説明する。まず、８インチ（直径約２００ｍｍ）の半導体ウエハ２１を印刷対象とし、印刷マスク２３の開口部２４の直径を１９０ｍｍとし、スキージ２５およびスキージホルダ２６の長さを２４０ｍｍとした。   Next, an experimental result of forming a sealing film using the squeegee 25 made of this stainless steel plate will be described. First, an 8-inch (about 200 mm diameter) semiconductor wafer 21 was to be printed, the diameter of the opening 24 of the printing mask 23 was 190 mm, and the lengths of the squeegee 25 and the squeegee holder 26 were 240 mm.

そして、図４に示すように、半導体ウエハ２１上において配線８および柱状電極９を含む保護膜５の上面にスキージ２５を用いてエポキシ系樹脂からなる液状樹脂を目標膜厚１３５μｍとして塗布し、半導体ウエハ２１の中心部および外周部の１２時の部分、３時の部分、６時の部分、９時の部分における封止膜１０の保護膜５上における膜厚を調べたところ、１１１μｍ、１３５μｍ、１０５μｍ、１１０μｍ、１２１μｍであり、その最大値（１３５μｍ）と最小値（１０５μｍ）との差が２０μｍであった。   Then, as shown in FIG. 4, a liquid resin made of an epoxy resin is applied to the upper surface of the protective film 5 including the wiring 8 and the columnar electrode 9 on the semiconductor wafer 21 with a target film thickness of 135 μm using a squeegee 25. When the film thickness on the protective film 5 of the sealing film 10 at the 12 o'clock portion, 3 o'clock portion, 6 o'clock portion, and 9 o'clock portion of the central portion and the outer peripheral portion of the wafer 21 was examined, 111 μm, 135 μm, 105 μm, 110 μm, and 121 μm, and the difference between the maximum value (135 μm) and the minimum value (105 μm) was 20 μm.

この場合、特に、半導体ウエハ２１の中心部における封止膜１０の保護膜５上における膜厚は１１１μｍである。これに対し、同じ長さのウレタンゴムからなるスキージを用いた場合には、特に、半導体ウエハ２１の中心部における封止膜１０の保護膜５上における膜厚は２０μｍであった。したがって、ステンレス鋼板からなるスキージ２５を用いた場合の方が封止膜１０の膜厚のばらつきが小さいと言える。   In this case, in particular, the film thickness of the sealing film 10 on the protective film 5 in the central portion of the semiconductor wafer 21 is 111 μm. On the other hand, when a squeegee made of urethane rubber having the same length was used, the film thickness on the protective film 5 of the sealing film 10 at the center of the semiconductor wafer 21 was 20 μm. Therefore, it can be said that the variation in the film thickness of the sealing film 10 is smaller when the squeegee 25 made of a stainless steel plate is used.

次に、図８はスキージ２５の他の例の側面図を示す。このスキージ２５において、図７に示すスキージ２５と異なる点は、厚さが０．２〜０．４ｍｍと薄くなっている点である。このように、スキージ２５の厚さを薄くすると、スキージ２５の先端に付着する液状樹脂が減少し、スクリーン印刷により塗布された液状樹脂からなる封止膜１０の表面の平滑性を向上することができる。   Next, FIG. 8 shows a side view of another example of the squeegee 25. The squeegee 25 is different from the squeegee 25 shown in FIG. 7 in that the thickness is as thin as 0.2 to 0.4 mm. Thus, if the thickness of the squeegee 25 is reduced, the liquid resin adhering to the tip of the squeegee 25 is reduced, and the smoothness of the surface of the sealing film 10 made of the liquid resin applied by screen printing can be improved. it can.

ただし、スキージ２５の厚さをこのように薄くすると、スキージ２５が撓みやすくなる。そこで、図８に示すように、左側（スキージ２５の移動方向とは反対側）のスキージホルダ２６の外面にボルト２７等によって取り付けられた側面ほぼく字状のスキージ撓み防止板２９の先端部をスキージ２５の先端部の左側の面（スキージ２５の移動方向とは反対側の面）に当接させると、スキージ２５が撓まないようにすることができる。   However, when the thickness of the squeegee 25 is reduced in this way, the squeegee 25 is easily bent. Therefore, as shown in FIG. 8, the tip of a squeegee-deflection prevention plate 29 having a substantially side shape attached to the outer surface of the squeegee holder 26 on the left side (opposite to the moving direction of the squeegee 25) with a bolt 27 or the like. When the squeegee 25 is brought into contact with the left side surface (the surface on the side opposite to the moving direction of the squeegee 25), the squeegee 25 can be prevented from bending.

この発明の製造方法により製造された半導体装置の一例の断面図。Sectional drawing of an example of the semiconductor device manufactured by the manufacturing method of this invention. 図１に示す半導体装置の製造に際し、当初用意したものの断面図。Sectional drawing of what was initially prepared in the case of manufacture of the semiconductor device shown in FIG. 図２に続く工程の断面図。Sectional drawing of the process following FIG. 図３に続く工程の断面図。Sectional drawing of the process following FIG. 図４に続く工程の断面図。Sectional drawing of the process following FIG. 図５に続く工程の断面図。Sectional drawing of the process following FIG. スキージの一例の側面図。The side view of an example of a squeegee. スキージの他の例の側面図。The side view of the other example of a squeegee.

符号の説明Explanation of symbols

１ シリコン基板
２ 接続パッド
３ 絶縁膜
５ 保護膜
７ 下地金属層
８ 配線
９ 柱状電極
１０ 封止膜
１１ 半田ボール
２１ 半導体ウエハ
２３ 印刷マスク
２４ 開口部
２５ スキージ
２６ スキージホルダ
２８ スキージ撓み防止板 DESCRIPTION OF SYMBOLS 1 Silicon substrate 2 Connection pad 3 Insulating film 5 Protective film 7 Base metal layer 8 Wiring 9 Columnar electrode 10 Sealing film 11 Solder ball 21 Semiconductor wafer 23 Print mask 24 Opening 25 Squeegee 26 Squeegee holder 28 Squeegee deflection prevention plate

Claims (8)

複数の柱状電極を有する半導体ウエハ上にスクリーン印刷により液状樹脂を塗布して封止膜を形成するとき、金属板からなるスキージを用いることを特徴とする半導体装置の製造方法。   A method of manufacturing a semiconductor device, wherein a squeegee made of a metal plate is used when a liquid resin is applied by screen printing on a semiconductor wafer having a plurality of columnar electrodes to form a sealing film. 請求項１に記載の発明において、前記スキージはステンレス鋼からなることを特徴とする半導体装置の製造方法。   2. The method of manufacturing a semiconductor device according to claim 1, wherein the squeegee is made of stainless steel. 請求項２に記載の発明において、前記スキージの厚さは１〜４ｍｍであることを特徴とする半導体装置の製造方法。   3. The method of manufacturing a semiconductor device according to claim 2, wherein the squeegee has a thickness of 1 to 4 mm. 請求項３に記載の発明において、前記スキージの先端は平面であることを特徴とする半導体装置の製造方法。   4. The method of manufacturing a semiconductor device according to claim 3, wherein a tip of the squeegee is a flat surface. 請求項１に記載の発明において、前記スキージの上部は一対のスキージホルダに挟持され、前記スキージの移動方向とは反対側の前記スキージホルダの外面に取り付けられたスキージ撓み防止板の先端部が前記スキージの先端部の該スキージの移動方向とは反対側の面に当接されていることを特徴とする半導体装置の製造方法。   The upper part of the squeegee is sandwiched between a pair of squeegee holders, and the tip of the squeegee deflection preventing plate attached to the outer surface of the squeegee holder opposite to the moving direction of the squeegee is the invention according to claim 1. A method of manufacturing a semiconductor device, wherein the tip of the squeegee is in contact with a surface opposite to the moving direction of the squeegee. 請求項５に記載の発明において、前記スキージはステンレス鋼からなることを特徴とする半導体装置の製造方法。   6. The method of manufacturing a semiconductor device according to claim 5, wherein the squeegee is made of stainless steel. 請求項６に記載の発明において、前記スキージの厚さは０．２〜０．４ｍｍであることを特徴とする半導体装置の製造方法。   7. The method of manufacturing a semiconductor device according to claim 6, wherein the squeegee has a thickness of 0.2 to 0.4 mm. 請求項７に記載の発明において、前記スキージの先端は平面であることを特徴とする半導体装置の製造方法。   8. The method of manufacturing a semiconductor device according to claim 7, wherein a tip of the squeegee is a flat surface.
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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08118598A (en) * 1994-10-24 1996-05-14 Nippon Koden Corp Metal squeezee
JP2000031174A (en) * 1998-07-15 2000-01-28 Matsushita Electric Works Ltd Manufacturing method of semiconductor device, squeegee device used therefor and semiconductor device
JP2000332034A (en) * 1999-05-18 2000-11-30 Japan Rec Co Ltd Manufacture of electronic component
JP2006196701A (en) * 2005-01-13 2006-07-27 Oki Electric Ind Co Ltd Manufacturing method for semiconductor device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08118598A (en) * 1994-10-24 1996-05-14 Nippon Koden Corp Metal squeezee
JP2000031174A (en) * 1998-07-15 2000-01-28 Matsushita Electric Works Ltd Manufacturing method of semiconductor device, squeegee device used therefor and semiconductor device
JP2000332034A (en) * 1999-05-18 2000-11-30 Japan Rec Co Ltd Manufacture of electronic component
JP2006196701A (en) * 2005-01-13 2006-07-27 Oki Electric Ind Co Ltd Manufacturing method for semiconductor device

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