JP2007243204A - Magnetic sensor - Google Patents

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JP2007243204A
JP2007243204A JP2007102148A JP2007102148A JP2007243204A JP 2007243204 A JP2007243204 A JP 2007243204A JP 2007102148 A JP2007102148 A JP 2007102148A JP 2007102148 A JP2007102148 A JP 2007102148A JP 2007243204 A JP2007243204 A JP 2007243204A
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bias magnet
effect element
magnetic sensor
magnetoresistive effect
film
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JP4640370B2 (en
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Yukio Wakui
幸夫 涌井
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Yamaha Corp
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a magnetic sensor achieving improved adhesion between bias magnet layers and a protection film, which results in excellent environment-proof property, especially excellent temperature change resistance. <P>SOLUTION: The magnetic sensor 10 is so constituted that: a spin-valve magnetoresistance effect element 12 is disposed on a substrate 11; the bias magnet layers 14 consisting of permanent magnet films are connected to both ends of the magnetoresistance effect element 12 respectively; and the protection film 17 which covers the magnetoresistance effect element 12 and upper surfaces 14a of the bias magnet layers 14, is formed. The magnetoresistance effect element 12 is formed in such a way that a lower surfaces 12a of both the ends of the magnetoresistance effect element 12 cover almost whole the regions of the upper surfaces 14a of the bias magnet layers 14. When the magnetoresistance effect element 12 is viewed from a side of the protection film 17 in periphery portions of the bias magnet layers 14, any spacing between a side of both the ends of the magnetoresistance effec element 12 and a corresponding side of the bias magnet layers 14 does not exceed 3 μm. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は、耐環境性に優れる磁気センサに関するものである。   The present invention relates to a magnetic sensor having excellent environmental resistance.

従来、巨大磁気抵抗素子（以下、「ＧＭＲ素子」とも称する。）などの抵抗値を呈するスピンバルブ型の磁気抵抗効果素子を用いた磁気センサが提案され、実用に供されている。
このＧＭＲ素子は、磁化の向きが所定の向きにピン止めされたピンド層と、磁化の向きが外部磁界に対応して変化するフリー層とを備え、外部磁界が加わった場合に、ピンド層の磁化の向きとフリー層の磁化の向きとの相対関係に応じた抵抗値を呈するもので、この抵抗値を測定することで外部磁界を検出するようになっている。 Conventionally, a magnetic sensor using a spin-valve magnetoresistive element exhibiting a resistance value such as a giant magnetoresistive element (hereinafter also referred to as “GMR element”) has been proposed and put into practical use.
This GMR element includes a pinned layer whose magnetization direction is pinned in a predetermined direction, and a free layer whose magnetization direction changes in response to an external magnetic field, and when an external magnetic field is applied, It exhibits a resistance value corresponding to the relative relationship between the magnetization direction and the magnetization direction of the free layer, and an external magnetic field is detected by measuring this resistance value.

図１１は、従来の磁気センサの概略構成を示す断面図である。
この磁気センサは、所定の厚みを有する石英またはシリコンウエハからなる基板１０１と、この基板１０１上に配されたＧＭＲ素子からなる磁気抵抗効果素子１０２と、この磁気抵抗効果素子１０２の両端にそれぞれ接続され、基板１０１上に非磁性材料からなる下地膜１０３を介して配された永久磁石膜からなるバイアス磁石層１０４と、磁気抵抗素子１０２およびバイアス磁石層１０４の上面を全て被覆するように設けられた酸化ケイ素膜からなる第一保護膜１０５と、窒化ケイ素膜からなる第二保護膜１０６とから概略構成されている（例えば、特許文献１参照。）。
ここで、第一保護膜１０５と第二保護膜１０６を併せて保護膜１０７と言うこともある。 FIG. 11 is a cross-sectional view showing a schematic configuration of a conventional magnetic sensor.
This magnetic sensor is connected to a substrate 101 made of a quartz or silicon wafer having a predetermined thickness, a magnetoresistive effect element 102 made of a GMR element disposed on the substrate 101, and both ends of the magnetoresistive effect element 102. The bias magnet layer 104 made of a permanent magnet film disposed on the substrate 101 through the base film 103 made of a nonmagnetic material, and the upper surface of the magnetoresistive element 102 and the bias magnet layer 104 are all covered. The first protective film 105 made of a silicon oxide film and the second protective film 106 made of a silicon nitride film are roughly configured (see, for example, Patent Document 1).
Here, the first protective film 105 and the second protective film 106 may be collectively referred to as a protective film 107.

この磁気センサでは、磁気抵抗効果素子１０２の両端の下面が、バイアス磁石層１０４の上面の全域を覆っていない。そのため、バイアス磁石層１０４の上面の一部にかかった状態で接続されている。このような磁気センサは、熱冷サイクル試験などによって、バイアス磁石層１０４と保護膜１０７の界面において、保護膜１０７が剥離することがあった。   In this magnetic sensor, the lower surfaces of both ends of the magnetoresistive effect element 102 do not cover the entire upper surface of the bias magnet layer 104. Therefore, the bias magnet layer 104 is connected so as to cover a part of the upper surface. In such a magnetic sensor, the protective film 107 may peel off at the interface between the bias magnet layer 104 and the protective film 107 due to a thermal cooling cycle test or the like.

特開平１２−１３７９０６号公報JP-A-12-137906

本発明は、前記事情に鑑みてなされたもので、耐環境性に優れる磁気センサを提供することを課題とする。   This invention is made | formed in view of the said situation, and makes it a subject to provide the magnetic sensor excellent in environmental resistance.

本発明は、上記課題を解決するために、基板上にスピンバルブ型の磁気抵抗効果素子が配され、該磁気抵抗効果素子の両端部には永久磁石膜からなるバイアス磁石層がそれぞれ接続されており、該磁気抵抗効果素子および該バイアス磁石層の上面を被覆するように保護膜が設けられた磁気センサにおいて、前記バイアス磁石層および前記磁気抵抗効果素子は、これらの厚み方向下部から上部へ向けて漸次外形が小さくなるように、基板に対して傾斜した側面を有し、平面視にて、該磁気抵抗効果素子の両端部における前記永久磁石膜の上面におけるバイアス磁石層の形成領域の外形が、同面上の磁気抵抗効果素子形成領域の外形よりも大きいことを特徴とする磁気センサを提供する。   In order to solve the above problems, the present invention provides a spin-valve magnetoresistive element on a substrate, and a bias magnet layer made of a permanent magnet film is connected to both ends of the magnetoresistive element. In the magnetic sensor provided with a protective film so as to cover the magnetoresistive effect element and the upper surface of the bias magnet layer, the bias magnet layer and the magnetoresistive effect element are directed from the bottom to the top in the thickness direction. The outer surface of the bias magnet layer forming region on the upper surface of the permanent magnet film at both ends of the magnetoresistive effect element in plan view has side surfaces that are inclined with respect to the substrate so that the outer shape gradually decreases. The magnetic sensor is characterized by being larger than the outer shape of the magnetoresistive element forming region on the same surface.

上記構成の磁気センサにおいて、前記永久磁石膜の上面におけるバイアス磁石層の形成領域の外形と、同面上の磁気抵抗効果素子形成領域の外形との間隔が、３μｍを超えないことが好ましい。   In the magnetic sensor having the above configuration, it is preferable that the distance between the outer shape of the bias magnet layer forming region on the upper surface of the permanent magnet film and the outer shape of the magnetoresistive effect element forming region on the same surface does not exceed 3 μm.

本発明の磁気センサは、磁気抵抗効果素子の両端部の下面が、バイアス磁石層の上面の略全域を覆うように、磁気抵抗効果素子を設けることにより、バイアス磁石層と保護膜との密着性が向上し、耐環境性、特に温度変化に対する耐性に優れ、信頼性の高いものとなる。   In the magnetic sensor of the present invention, the adhesion between the bias magnet layer and the protective film is provided by providing the magnetoresistive effect element so that the lower surface of both end portions of the magnetoresistive effect element covers substantially the entire upper surface of the bias magnet layer. As a result, the environment resistance, particularly the resistance to temperature change, is excellent and the reliability is high.

以下、本発明の磁気センサについて図面に基づき詳細に説明する。
図１は、本発明の磁気センサの一実施形態を示す概略断面図である。図２は、本発明の磁気センサの一実施形態における保護膜側から磁気抵抗効果素子を見た状態を示す概略平面図であり、（ａ）は全体図、（ｂ）はバイアス磁石の周縁部を示す部分図である。 Hereinafter, the magnetic sensor of the present invention will be described in detail with reference to the drawings.
FIG. 1 is a schematic sectional view showing an embodiment of the magnetic sensor of the present invention. FIG. 2 is a schematic plan view showing a state in which the magnetoresistive effect element is viewed from the protective film side in one embodiment of the magnetic sensor of the present invention, (a) is an overall view, and (b) is a peripheral portion of the bias magnet. FIG.

この実施形態の磁気センサ１０は、所定の厚みを有する石英またはシリコンウエハからなる基板１１と、この基板１１上に配されたＧＭＲ素子をなす磁気抵抗効果素子１２と、この磁気抵抗効果素子１２の両端部にそれぞれ接続され、基板１１上に非磁性材料からなる下地膜１３を介して配された永久磁石膜からなるバイアス磁石層１４と、磁気抵抗素子１２およびバイアス磁石層１４の上面を全て被覆するように設けられた第一保護膜１５と、この第一保護膜１５の上面に設けられた第二保護膜１６とから概略構成されている。
ここで、第一保護膜１５と第二保護膜１６を併せて保護膜１７と言うこともある。 The magnetic sensor 10 of this embodiment includes a substrate 11 made of a quartz or silicon wafer having a predetermined thickness, a magnetoresistive effect element 12 constituting a GMR element disposed on the substrate 11, and the magnetoresistive effect element 12. A bias magnet layer 14 made of a permanent magnet film connected to both ends and disposed on a substrate 11 via a base film 13 made of a nonmagnetic material, and the upper surfaces of the magnetoresistive element 12 and the bias magnet layer 14 are all covered. The first protective film 15 provided in such a manner and the second protective film 16 provided on the upper surface of the first protective film 15 are schematically configured.
Here, the first protective film 15 and the second protective film 16 may be collectively referred to as a protective film 17.

磁気センサ１０では、磁気抵抗効果素子１２の両端部の下面１２ａが、バイアス磁石層１４の上面１４ａのほぼ全域を覆うように設けられている。   In the magnetic sensor 10, the lower surfaces 12 a at both ends of the magnetoresistive effect element 12 are provided so as to cover almost the entire area of the upper surface 14 a of the bias magnet layer 14.

ここで、磁気抵抗効果素子１２の両端部の下面１２ａが、バイアス磁石層１４の上面１４ａのほぼ全域を覆うとは、次のようなことを示している。すなわち、図２に示すように、バイアス磁石層１４の周縁部１４ｄにおいて、磁気抵抗効果素子１２の側面１２ｂと、バイアス磁石層１４の側面１４ｂが同一面上に配されることなく、かつ、磁気抵抗効果素子１２の側面１２ｃと、バイアス磁石層１４の側面１４ｃが同一面上に配されることなく、磁気抵抗効果素子１２の両端の下面１２ａが、上面１４ａを覆っていることを示している。   Here, the fact that the lower surfaces 12a at both ends of the magnetoresistive effect element 12 cover almost the entire area of the upper surface 14a of the bias magnet layer 14 indicates the following. That is, as shown in FIG. 2, the side surface 12b of the magnetoresistive effect element 12 and the side surface 14b of the bias magnet layer 14 are not arranged on the same surface in the peripheral portion 14d of the bias magnet layer 14, and magnetic The side surface 12c of the resistive effect element 12 and the side surface 14c of the bias magnet layer 14 are not arranged on the same plane, and the lower surface 12a at both ends of the magnetoresistive effect element 12 covers the upper surface 14a. .

また、磁気センサ１０では、バイアス磁石層１４の周縁部１４ｄにおいて、保護膜１７側から磁気抵抗効果素子１２を見たときに、磁気抵抗効果素子１２の両端部の側面と、バイアス磁石層１４の側面との間隔が３μｍを超えないように、磁気抵抗効果素子１２の両端の下面１２ａが、上面１４ａを覆っている。すなわち、図２（ｂ）に示すように、バイアス磁石層１４の周縁部１４ｄにおいて、磁気抵抗効果素子１２の側面１２ｂと、バイアス磁石層１４の側面１４ｂとの間隔ｄ１、および、磁気抵抗効果素子１２の側面１２ｃと、バイアス磁石層１４の側面１４ｃとの間隔ｄ２が３μｍを超えないようになっている。 Further, in the magnetic sensor 10, when the magnetoresistive effect element 12 is viewed from the protective film 17 side at the peripheral edge 14 d of the bias magnet layer 14, the side surfaces of both ends of the magnetoresistive effect element 12 and the bias magnet layer 14. The lower surface 12a at both ends of the magnetoresistive effect element 12 covers the upper surface 14a so that the distance from the side surface does not exceed 3 μm. That is, as shown in FIG. 2B, in the peripheral portion 14d of the bias magnet layer 14, the distance d 1 between the side surface 12b of the magnetoresistive effect element 12 and the side surface 14b of the bias magnet layer 14, and the magnetoresistive effect and the side 12c of the element 12, the distance d 2 between the side surface 14c of the bias magnetic layer 14 is adapted to not exceed 3 [mu] m.

磁気抵抗効果素子１２の両端部の側面と、バイアス磁石層１４の側面との間隔が３μｍを超えると、バイアス磁石層１４と保護膜１７との密着性が不十分となり、熱冷サイクル試験などによって、外部から剪断応力を繰り返し加えた場合、バイアス磁石層１４と保護膜１７の界面において、保護膜１７が剥離するおそれがある。   When the distance between the side surfaces of both end portions of the magnetoresistive effect element 12 and the side surface of the bias magnet layer 14 exceeds 3 μm, the adhesion between the bias magnet layer 14 and the protective film 17 becomes insufficient, and a thermal cooling cycle test or the like is performed. When the shear stress is repeatedly applied from the outside, the protective film 17 may be peeled off at the interface between the bias magnet layer 14 and the protective film 17.

磁気抵抗効果素子１２は、例えば、フリー層、銅（Ｃｕ）からなる導電性のスペーサ層、コバルト−鉄（ＣｏＦｅ）合金からなるピンド層、白金−マンガン（ＰｔＭｎ）合金からなるピニング層、チタン（Ｔｉ）、タンタル（Ｔａ）などの金属薄膜からなるキャッピング層が順次積層されてなるものである。   The magnetoresistive effect element 12 includes, for example, a free layer, a conductive spacer layer made of copper (Cu), a pinned layer made of a cobalt-iron (CoFe) alloy, a pinning layer made of a platinum-manganese (PtMn) alloy, titanium ( A capping layer made of a metal thin film such as Ti) or tantalum (Ta) is sequentially laminated.

フリー層は、外部磁界の向きに応じて磁化の向きが変化する層であり、例えば、コバルト−ジルコニウム−ニオブ（ＣｏＺｒＮｂ）アモルファス磁性層と、ＣｏＺｒＮｂアモルファス磁性層上に積層されたニッケル−鉄（ＮｉＦｅ）磁性層と、ＮｉＦｅ磁性層上に積層されたコバルト−鉄（ＣｏＦｅ）層とから構成されている。
このフリー層には、その一軸異方性を維持するために、所定の方向にバイアス磁石層１４によりバイアス磁界が付与されている。 The free layer is a layer whose magnetization direction changes in accordance with the direction of the external magnetic field. ) A magnetic layer and a cobalt-iron (CoFe) layer laminated on the NiFe magnetic layer.
A bias magnetic field is applied to the free layer by the bias magnet layer 14 in a predetermined direction in order to maintain the uniaxial anisotropy.

ＣｏＺｒＮｂアモルファス磁性層とＮｉＦｅ磁性層は、軟質の強磁性体であり、ＣｏＦｅ層はＮｉＦｅ磁性層のニッケルおよびスペーサ層の銅の拡散を防止するものである。   The CoZrNb amorphous magnetic layer and the NiFe magnetic layer are soft ferromagnets, and the CoFe layer prevents diffusion of nickel in the NiFe magnetic layer and copper in the spacer layer.

スペーサ層は、銅もしくは銅合金からなる金属薄膜である。
ピンド層は、コバルト−鉄（ＣｏＦｅ）磁性層により構成されている。このＣｏＦｅ磁性層は、後述する反強磁性膜に交換結合的に裏打されることにより磁化の向きがピン止め（固着）されている。 The spacer layer is a metal thin film made of copper or a copper alloy.
The pinned layer is composed of a cobalt-iron (CoFe) magnetic layer. The direction of magnetization of this CoFe magnetic layer is pinned (fixed) by being backed by an exchange coupling to an antiferromagnetic film described later.

ピニング層は、ＣｏＦｅ磁性層上に積層された白金を４５〜５５ｍｏｌ％含むＰｔＭｎ合金からなる反強磁性膜により構成されている。
これらピンド層とピニング層を併せてピン層と称する。 The pinning layer is composed of an antiferromagnetic film made of a PtMn alloy containing 45 to 55 mol% of platinum laminated on the CoFe magnetic layer.
These pinned layer and pinning layer are collectively referred to as a pinned layer.

下地膜１３は、膜厚４０ｎｍ程度のクロム（Ｃｒ）からなる金属薄膜である。
バイアス磁石層１４は、膜厚９０ｎｍ程度のコバルト−白金−クロム（ＣｏＣｒＰｔ）合金からなる金属薄膜である。 The base film 13 is a metal thin film made of chromium (Cr) having a thickness of about 40 nm.
The bias magnet layer 14 is a metal thin film made of a cobalt-platinum-chromium (CoCrPt) alloy having a thickness of about 90 nm.

第一保護膜１５は、酸化ケイ素（ＳｉＯｘ膜）からなる薄膜である。
第二保護膜１６は、窒化ケイ素（ＳｉＮｙ膜）からなる薄膜である。 The first protective film 15 is a thin film made of silicon oxide (SiO x film).
The second protective film 16 is a thin film made of silicon nitride (SiN y film).

次に、図３および図４〜図１０を用いて本発明に係る磁気センサの製造方法について説明する。
図３は、本発明に係る磁気センサの製造方法の手順を示すフローチャートである。図４〜図１０は、本発明に係る磁気センサの製造方法を示す概略断面図である。 Next, a method for manufacturing a magnetic sensor according to the present invention will be described with reference to FIGS. 3 and 4 to 10.
FIG. 3 is a flowchart showing the procedure of the method of manufacturing the magnetic sensor according to the present invention. 4-10 is schematic sectional drawing which shows the manufacturing method of the magnetic sensor based on this invention.

この磁気センサの製造方法では、まず石英またはシリコンウエハからなる基板１１を用意する。基板１１には、あらかじめ磁気センサ制御用のＬＳＩ部分を形成しておくことができる。その場合には、工程Ａにおいて、公知の方法にてトランジスタなどの素子、および配線、絶縁膜、コンタクトなどを形成し保護膜を形成し、この保護膜に接続用の開口部を形成しておく。   In this magnetic sensor manufacturing method, a substrate 11 made of quartz or a silicon wafer is first prepared. An LSI portion for controlling the magnetic sensor can be formed in advance on the substrate 11. In that case, in step A, an element such as a transistor, a wiring, an insulating film, a contact, and the like are formed by a known method to form a protective film, and a connection opening is formed in the protective film. .

次いで、図４に示すように、石英またはシリコンウエハからなる基板１１の上面にスパッタリング法により、膜厚４０ｎｍ程度のクロムからなる下地膜１３を形成する。続いて、下地膜１３の上面にスパッタリング法により、膜厚９０ｎｍ程度のコバルト−白金−クロム合金からなるバイアス磁石層１４を形成する（工程Ｂ−１）。   Next, as shown in FIG. 4, a base film 13 made of chromium having a thickness of about 40 nm is formed on the upper surface of the substrate 11 made of quartz or a silicon wafer by sputtering. Subsequently, a bias magnet layer 14 made of a cobalt-platinum-chromium alloy having a thickness of about 90 nm is formed on the upper surface of the base film 13 by a sputtering method (step B-1).

次いで、図５に示すように、バイアス磁石層１４の上面に、スピンコート法、ディップコート法などにより任意の厚みのフォトレジストを塗布し、このフォトレジストの表面に任意のパターンのマスクを配置して露光した後、現像処理を行って不必要なフォトレジストを除去する。続いて、フォトレジストを加熱してリフローさせ、両端部が曲面をなすようにレジスト膜２０を形成する（工程Ｂ−２）。   Next, as shown in FIG. 5, a photoresist having an arbitrary thickness is applied to the upper surface of the bias magnet layer 14 by a spin coating method, a dip coating method, or the like, and a mask having an arbitrary pattern is disposed on the surface of the photoresist. After the exposure, development processing is performed to remove unnecessary photoresist. Subsequently, the photoresist is heated and reflowed, and a resist film 20 is formed so that both end portions are curved (step B-2).

次いで、図６に示すように、イオンミリングにより、レジスト膜２０で覆われていない部分の下地膜１３およびバイアス磁石層１４を除去すると同時に、下地膜１３およびバイアス磁石層１４を所定の形状に形成する（工程Ｂ−３）。この工程Ｂ−３において、レジスト膜２０の両端部の曲面形状に応じて、イオンミリングにより、下地膜１３およびバイアス磁石層１４の側面が基板１１に対して傾斜するように形成される。   Next, as shown in FIG. 6, the base film 13 and the bias magnet layer 14 that are not covered with the resist film 20 are removed by ion milling, and at the same time, the base film 13 and the bias magnet layer 14 are formed in a predetermined shape. (Step B-3). In this step B-3, the side surfaces of the base film 13 and the bias magnet layer 14 are formed so as to be inclined with respect to the substrate 11 by ion milling according to the curved surface shapes at both ends of the resist film 20.

次いで、図７に示すように、アセトン、Ｎ−メチル−２−ピロリドンなどの洗浄液でレジスト膜２０を除去し、バイアス磁石層１４の表面を洗浄し、レジスト膜２０を除去する（工程Ｂ−４）。   Next, as shown in FIG. 7, the resist film 20 is removed with a cleaning liquid such as acetone or N-methyl-2-pyrrolidone, the surface of the bias magnet layer 14 is washed, and the resist film 20 is removed (step B-4). ).

次いで、図８に示すように、基板１１の上面、下地膜１３の側面、バイアス磁石層１４の上面および側面に、イオンビームスパッタ法、マグネトロンスパッタ法などにより、磁気抵抗効果素子１２を形成する（工程Ｂ−５）。   Next, as shown in FIG. 8, the magnetoresistive effect element 12 is formed on the upper surface of the substrate 11, the side surface of the base film 13, and the upper and side surfaces of the bias magnet layer 14 by ion beam sputtering, magnetron sputtering, or the like ( Step B-5).

次いで、外部空間に設けたマグネットアレイを、バイアス磁石層１４に対して所定の位置に配置し、ピン層に対して所定の方向に磁場を印加する（工程Ｂ−６）。   Next, the magnet array provided in the external space is disposed at a predetermined position with respect to the bias magnet layer 14, and a magnetic field is applied to the pinned layer in a predetermined direction (step B-6).

次いで、マグネットアレイと、バイアス磁石層１４との配置を固定したまま、真空中にて、２８０℃で４時間熱処理する。これにより、磁気抵抗効果素子１２のピン層のうち、ピニング層の規則化熱処理を行う（工程Ｂ−７）。   Next, heat treatment is performed at 280 ° C. for 4 hours in a vacuum while the arrangement of the magnet array and the bias magnet layer 14 is fixed. Thereby, the ordering heat treatment of the pinning layer among the pinned layers of the magnetoresistive effect element 12 is performed (step B-7).

次いで、マグネットアレイを所定の位置から取り外す（工程Ｂ−８）。   Next, the magnet array is removed from a predetermined position (step B-8).

次いで、図９に示すように、磁気抵抗効果素子１２の上面に、スピンコート法、ディップコート法などにより任意の厚みのフォトレジストを塗布し、このフォトレジストの表面に任意のパターンのマスクを配置して露光した後、現像処理を行って不必要なフォトレジストを除去する。続いて、フォトレジストを加熱してリフローさせ、両端部が曲面をなすようにレジスト膜２１を形成する（工程Ｂ−９）。   Next, as shown in FIG. 9, a photoresist having an arbitrary thickness is applied to the upper surface of the magnetoresistive element 12 by a spin coating method, a dip coating method, or the like, and a mask having an arbitrary pattern is disposed on the surface of the photoresist. After the exposure, development processing is performed to remove unnecessary photoresist. Subsequently, the photoresist is heated and reflowed, and a resist film 21 is formed so that both end portions are curved (step B-9).

次いで、イオンミリングにより、レジスト膜２１で覆われていない部分の磁気抵抗効果素子１２を除去すると同時に、磁気抵抗効果素子１２を所定の形状に形成する（工程Ｂ−１０）。この工程Ｂ−１０において、レジスト膜２１の両端部の曲面形状に応じて、イオンミリングにより、磁気抵抗効果素子１２の側面が基板１１に対して傾斜するように形成される。   Next, the portion of the magnetoresistive effect element 12 that is not covered with the resist film 21 is removed by ion milling, and at the same time, the magnetoresistive effect element 12 is formed into a predetermined shape (step B-10). In Step B-10, the side surface of the magnetoresistive effect element 12 is formed so as to be inclined with respect to the substrate 11 by ion milling according to the curved surface shape of both end portions of the resist film 21.

次いで、アセトン、Ｎ−メチル−２−ピロリドンなどの洗浄液でレジスト膜２１を除去し、磁気抵抗効果素子１２の表面を洗浄し、レジスト膜２１を除去する（工程Ｂ−１１）。   Next, the resist film 21 is removed with a cleaning liquid such as acetone or N-methyl-2-pyrrolidone, the surface of the magnetoresistive effect element 12 is washed, and the resist film 21 is removed (step B-11).

次いで、磁気抵抗効果素子１２の上面に、プラズマＣＶＤ法により、膜厚１５０ｎｍ程度の酸化ケイ素膜からなる第一保護膜１５を形成する（工程Ｂ−１２）。   Next, a first protective film 15 made of a silicon oxide film having a thickness of about 150 nm is formed on the upper surface of the magnetoresistive effect element 12 by a plasma CVD method (step B-12).

次いで、第一保護膜１５の上面に、プラズマＣＶＤ法により、膜厚３００ｎｍ程度の窒化ケイ素膜からなる第二保護膜１６を形成する（工程Ｂ−１３）。
ここで、第一保護膜１５および第二保護膜１６の上に、さらにポリイミド樹脂からなる第三保護膜を設けてもよい。 Next, a second protective film 16 made of a silicon nitride film having a film thickness of about 300 nm is formed on the upper surface of the first protective film 15 by plasma CVD (step B-13).
Here, a third protective film made of polyimide resin may be further provided on the first protective film 15 and the second protective film 16.

次いで、工程Ｃにおいて、第一保護膜１５および第二保護膜１６の所定の箇所において開口し、パッドを形成した後、ウエハをダイシングして個々のチップに切断する。そして、個々のチップは樹脂により封止される。   Next, in Step C, openings are formed at predetermined locations of the first protective film 15 and the second protective film 16 to form pads, and then the wafer is diced and cut into individual chips. Each chip is sealed with resin.

以下、実施例により本発明をさらに具体的に説明するが、本発明は以下の実施例に限定されるものではない。   EXAMPLES Hereinafter, although an Example demonstrates this invention further more concretely, this invention is not limited to a following example.

（実施例）
上述の本発明に係る磁気センサの製造方法に従って、膜厚５ｎｍの磁気抵抗効果素子を有する磁気センサを作製した。
この際、バイアス磁石層の周縁部において、保護膜（素子の上面）側から磁気抵抗効果素子を見たとき、磁気抵抗効果素子の両端部の側面と、バイアス磁石層の側面との間隔ｄが１μｍ、２μｍ、３μｍの磁気センサを作製した。
また、得られた磁気センサを用いて、プラスチックモールドパッケージを作製した。 (Example)
A magnetic sensor having a magnetoresistive effect element having a film thickness of 5 nm was manufactured according to the above-described method for manufacturing a magnetic sensor according to the present invention.
At this time, when the magnetoresistive element is viewed from the side of the protective film (the upper surface of the element) at the periphery of the bias magnet layer, the distance d between the side surfaces of both ends of the magnetoresistive element and the side surfaces of the bias magnet layer is Magnetic sensors of 1 μm, 2 μm and 3 μm were produced.
Also, a plastic mold package was produced using the obtained magnetic sensor.

（１）密着性試験
磁気センサの上面（保護膜が設けられている側の面）にスコッチ３Ｍ社製のメンディングテープを貼付した後、このメンディングテープを引き剥がして、磁気センサのバイアス磁石層と保護膜の界面における剥離の有無を調べた。同様の試験を磁気センサ１００個について行い、界面における剥離が生じた磁気センサの数を数えた。結果を表１に示す。 (1) Adhesion test After applying a scotch 3M mending tape to the top surface (the surface on which the protective film is provided) of the magnetic sensor, the mending tape is peeled off to provide a bias magnet for the magnetic sensor. The presence or absence of peeling at the interface between the layer and the protective film was examined. A similar test was performed on 100 magnetic sensors, and the number of magnetic sensors in which peeling at the interface occurred was counted. The results are shown in Table 1.

（２）熱冷サイクル試験
磁気センサのプラスチックモールドパッケージを、−６５℃で３０分間保持、５分間で室温まで昇温、室温で３０分間保持、５分間で１５０℃まで昇温、１５０℃で３０分間保持、５分間で室温まで降温、室温で３０分間保持、５分間で−６５℃まで降温の温度サイクルを１サイクルとして５００回繰り返し温度変化させる環境に放置した。
その後、このプラスチックモールドパッケージを、発煙硝酸を用いるエッチングにより開封し、磁気センサのバイアス磁石層と保護膜の界面における剥離の有無を調べた。同様の試験を磁気センサのプラスチックモールドパッケージ２０個について行い、界面における剥離が生じた磁気センサの数を数えた。結果を表１に示す。 (2) Thermal cooling cycle test The plastic mold package of the magnetic sensor is held at −65 ° C. for 30 minutes, raised to room temperature in 5 minutes, held at room temperature for 30 minutes, raised to 150 ° C. in 5 minutes, 30 at 150 ° C. The temperature cycle was held for 5 minutes, lowered to room temperature in 5 minutes, held at room temperature for 30 minutes, lowered to -65 ° C in 5 minutes, and left in an environment where the temperature was changed 500 times repeatedly.
Thereafter, the plastic mold package was opened by etching using fuming nitric acid, and the presence or absence of peeling at the interface between the bias magnet layer and the protective film of the magnetic sensor was examined. A similar test was performed on 20 plastic mold packages of the magnetic sensor, and the number of magnetic sensors in which peeling at the interface occurred was counted. The results are shown in Table 1.

（比較例）
上述の本発明に係る磁気センサの製造方法に準じて、膜厚５０ｎｍの磁気抵抗効果素子を有する磁気センサを作製した。
この際、バイアス磁石層の周縁部において、保護膜側から磁気抵抗効果素子を見たとき、磁気抵抗効果素子の両端部の側面と、バイアス磁石層の側面との間隔ｄが１５μｍの磁気センサを作製した。
また、得られた磁気センサを用いて、プラスチックモールドパッケージを作製した。 (Comparative example)
A magnetic sensor having a magnetoresistive effect element having a film thickness of 50 nm was manufactured according to the above-described method for manufacturing a magnetic sensor according to the present invention.
At this time, when the magnetoresistive element is viewed from the protective film side at the periphery of the bias magnet layer, a magnetic sensor having a distance d of 15 μm between the side surfaces of both ends of the magnetoresistive element and the side surface of the bias magnet layer is used. Produced.
Also, a plastic mold package was produced using the obtained magnetic sensor.

実施例と同様にして、得られた磁気センサおよび磁気センサのプラスチックモールドパッケージについて、密着性試験および熱冷サイクル試験を行った。結果を表１に示す。   In the same manner as in the examples, the adhesion test and the thermal cooling cycle test were performed on the obtained magnetic sensor and the plastic mold package of the magnetic sensor. The results are shown in Table 1.

Figure 2007243204
Figure 2007243204

表１の結果から、実施例の磁気センサは、バイアス磁石層と保護膜との密着性に優れ、耐環境性にも優れたものであることが確認された。
一方、比較例の磁気センサは、バイアス磁石層と保護膜との密着性が不十分であるため、耐環境性にも劣るものであることが確認された。 From the results of Table 1, it was confirmed that the magnetic sensor of the example was excellent in adhesion between the bias magnet layer and the protective film and excellent in environmental resistance.
On the other hand, it was confirmed that the magnetic sensor of the comparative example was inferior in environmental resistance because of insufficient adhesion between the bias magnet layer and the protective film.

本発明の磁気センサの一実施形態を示す概略断面図である。It is a schematic sectional drawing which shows one Embodiment of the magnetic sensor of this invention. 本発明の磁気センサの一実施形態における保護膜側から磁気抵抗効果素子を見た状態を示す概略平面図であり、（ａ）は全体図、（ｂ）はバイアス磁石の周縁部を示す部分図である。It is a schematic plan view which shows the state which looked at the magnetoresistive effect element from the protective film side in one Embodiment of the magnetic sensor of this invention, (a) is a general view, (b) is a fragmentary figure which shows the peripheral part of a bias magnet It is. 本発明に係る磁気センサの製造方法の手順を示すフローチャートである。It is a flowchart which shows the procedure of the manufacturing method of the magnetic sensor which concerns on this invention. 本発明に係る磁気センサの製造方法を示す概略断面図である。It is a schematic sectional drawing which shows the manufacturing method of the magnetic sensor which concerns on this invention. 本発明に係る磁気センサの製造方法を示す概略断面図である。It is a schematic sectional drawing which shows the manufacturing method of the magnetic sensor which concerns on this invention. 本発明に係る磁気センサの製造方法を示す概略断面図である。It is a schematic sectional drawing which shows the manufacturing method of the magnetic sensor which concerns on this invention. 本発明に係る磁気センサの製造方法を示す概略断面図である。It is a schematic sectional drawing which shows the manufacturing method of the magnetic sensor which concerns on this invention. 本発明に係る磁気センサの製造方法を示す概略断面図である。It is a schematic sectional drawing which shows the manufacturing method of the magnetic sensor which concerns on this invention. 本発明に係る磁気センサの製造方法を示す概略断面図である。It is a schematic sectional drawing which shows the manufacturing method of the magnetic sensor which concerns on this invention. 本発明に係る磁気センサの製造方法を示す概略断面図である。It is a schematic sectional drawing which shows the manufacturing method of the magnetic sensor which concerns on this invention. 従来の磁気センサの概略構成を示す断面図である。It is sectional drawing which shows schematic structure of the conventional magnetic sensor.

符号の説明Explanation of symbols

１０・・・磁気センサ、１１・・・基板、１２・・・磁気抵抗効果素子、１３・・・下地膜、１４・・・バイアス磁石層、１４ｄ・・・周縁部、１５・・・第一保護膜、１６・・・第二保護膜、１７・・・保護膜、２０，２１・・・レジスト膜。 DESCRIPTION OF SYMBOLS 10 ... Magnetic sensor, 11 ... Substrate, 12 ... Magnetoresistive element, 13 ... Underlayer, 14 ... Bias magnet layer, 14d ... Peripheral part, 15 ... 1st Protective film, 16 ... second protective film, 17 ... protective film, 20, 21 ... resist film.

Claims (2)

基板上にスピンバルブ型の磁気抵抗効果素子が配され、該磁気抵抗効果素子の両端部には永久磁石膜からなるバイアス磁石層がそれぞれ接続されており、該磁気抵抗効果素子および該バイアス磁石層の上面を被覆するように保護膜が設けられた磁気センサにおいて、
前記バイアス磁石層および前記磁気抵抗効果素子は、これらの厚み方向下部から上部へ向けて漸次外形が小さくなるように、基板に対して傾斜した側面を有し、
平面視にて、該磁気抵抗効果素子の両端部における前記永久磁石膜の上面におけるバイアス磁石層の形成領域の外形が、同面上の磁気抵抗効果素子形成領域の外形よりも大きいことを特徴とする磁気センサ。 A spin valve type magnetoresistive effect element is disposed on a substrate, and a bias magnet layer made of a permanent magnet film is connected to both ends of the magnetoresistive effect element. The magnetoresistive effect element and the bias magnet layer In a magnetic sensor provided with a protective film so as to cover the upper surface of
The bias magnet layer and the magnetoresistive effect element have side surfaces that are inclined with respect to the substrate so that the outer shape gradually decreases from the lower part to the upper part in the thickness direction,
In plan view, the outer shape of the bias magnet layer formation region on the upper surface of the permanent magnet film at both ends of the magnetoresistive effect element is larger than the outer shape of the magnetoresistive effect element formation region on the same surface. Magnetic sensor to do. 前記永久磁石膜の上面におけるバイアス磁石層の形成領域の外形と、同面上の磁気抵抗効果素子形成領域の外形との間隔が、３μｍを超えないことを特徴とする請求項１に記載の磁気センサ。   2. The magnetism according to claim 1, wherein an interval between the outer shape of the bias magnet layer forming region on the upper surface of the permanent magnet film and the outer shape of the magnetoresistive element forming region on the same surface does not exceed 3 μm. Sensor.
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