JP2007204822A - Plating method - Google Patents

Plating method Download PDF

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JP2007204822A
JP2007204822A JP2006026730A JP2006026730A JP2007204822A JP 2007204822 A JP2007204822 A JP 2007204822A JP 2006026730 A JP2006026730 A JP 2006026730A JP 2006026730 A JP2006026730 A JP 2006026730A JP 2007204822 A JP2007204822 A JP 2007204822A
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plating
film
ceramic electronic
electronic component
ppm
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Izumi Masuda
いづみ 増田
Masahiko Konno
正彦 今野
Masaru Hasebe
勝 長谷部
Yoshihiro Kamibayashi
義広 上林
Yukimare Abe
幸希 阿部
Daiki Sato
大樹 佐藤
Hidetoshi Watanabe
秀利 渡辺
Tomonori Sugiyama
智紀 杉山
Kazuhiro Shibuya
和博 渋谷
Makoto Takahashi
誠 高橋
Mitsuharu Koike
光晴 小池
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TDK Corp
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TDK Corp
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a plating method where plating elongation can be evaded without performing coating treatment for blocking plating on the surface of an element assembly. <P>SOLUTION: A ceramic electronic component 1 comprising an element assembly 2 composed of a Zn-containing ceramic material and a plurality of plating substrate films 41 arranged on the surface of the element assembly at intervals each other is prepared. Then, electroplating is performed on the ceramic electronic component 1 with a plating liquid in which the concentration of Zn ions is controlled to 0 to 100 ppm, and a plating film 43 is precipitated on the surface of the plating substrate film 41. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は、チップ状セラミック電子部品の端子電極を形成するためのめっき方法に関する。   The present invention relates to a plating method for forming a terminal electrode of a chip-like ceramic electronic component.

チップ状セラミック電子部品として、従来より種々のタイプのものが知られているが、そのうちの一つに、Ｚｎを含有するセラミック材料から構成された素体の表面に、互いに間隔を隔てて、複数の端子電極を設けたタイプのものが知られている。例えば、酸化亜鉛系チップバリスタや、亜鉛含有フェライトをコアとして用いたチップインダクタ等がその代表例である。   Various types of chip-shaped ceramic electronic components have been known in the past. One of them is a plurality of chip-shaped ceramic electronic components spaced apart from each other on the surface of an element body made of a ceramic material containing Zn. A type provided with a terminal electrode is known. For example, zinc oxide chip varistors, chip inductors using zinc-containing ferrite as a core are typical examples.

この種のチップ状セラミック電子部品において、端子電極を形成するには、予め形成されためっき下地膜の上にめっき膜を形成するプロセスをとる。めっき膜を形成するための方法として、予め、めっき下地膜を形成したセラミック電子部品を、めっき液に浸漬（ジャブ漬け）し、めっき下地膜の表面にめっき膜を析出させる方法が知られている。   In this type of chip-shaped ceramic electronic component, in order to form a terminal electrode, a process of forming a plating film on a pre-formed plating base film is taken. As a method for forming a plating film, a method in which a ceramic electronic component on which a plating base film has been formed in advance is immersed in a plating solution (soaked in a jab) and the plating film is deposited on the surface of the plating base film is known. .

しかし、この方法によると、めっき下地膜の表面のみならず、素体の表面にもめっき膜が析出する「めっき伸び」の現象が発生し、端子電極間の絶縁耐圧が低下し、最悪の場合には端子電極間短絡を招いてしまうことがあった。特に最近は、この種のセラミック電子部品の小型化に伴い、端子電極の配置間隔も狭められる傾向にあり、めっき伸びによる端子電極間の絶縁耐圧の低下、端子電極間の短絡が、極めて生じやすくなっている。   However, according to this method, not only the surface of the plating base film but also the surface of the element body, the phenomenon of “plating elongation” occurs, and the withstand voltage between the terminal electrodes decreases, which is the worst case. In some cases, a short circuit between terminal electrodes may be caused. Particularly recently, with the miniaturization of this kind of ceramic electronic components, the spacing between the terminal electrodes tends to be narrowed, and it is very easy to cause a decrease in the withstand voltage between the terminal electrodes due to plating elongation and a short circuit between the terminal electrodes. It has become.

めっき伸びを防止するための手法として、めっき下地膜のまわりの素体表面を例えば電気絶縁層で被覆することにより、素体表面へのめっき付着を阻止する技術が知られている（特許文献１参照）が、このようなめっき阻止用被覆処理は手間がかかり、生産効率の悪化及び生産コストの上昇を招く。
特開平５−２５１２１０号公報 As a technique for preventing plating elongation, a technique is known in which the surface of an element body around a plating base film is covered with, for example, an electrical insulating layer, thereby preventing plating adhesion to the element surface (Patent Document 1). However, such a plating-inhibiting coating process is time-consuming and causes a deterioration in production efficiency and an increase in production cost.
JP-A-5-251210

本発明の課題は、素体表面にめっき阻止用被覆処理を施すことなく、めっき伸びを回避し得るめっき方法を提供することである。   The subject of this invention is providing the plating method which can avoid plating elongation, without performing the coating process for metal-plating prevention to the element body surface.

上述した課題を解決するため、本発明に係るめっき方法では、Ｚｎを含有するセラミック材料から構成された素体と、前記素体の表面に互いに間隔を隔てて配置された複数の端子電極用めっき下地膜とを含むセラミック電子部品を用意し、次に、Ｚｎイオン濃度を０ｐｐｍ以上１００ｐｐｍ以下に管理しためっき液中で、前記セラミック電子部品に対する電気めっき処理を行い、前記めっき下地膜上にめっき膜を形成する。   In order to solve the above-described problems, in the plating method according to the present invention, an element body made of a ceramic material containing Zn and a plurality of terminal electrode platings arranged on the surface of the element body at intervals from each other. A ceramic electronic component including a base film is prepared, and then an electroplating process is performed on the ceramic electronic component in a plating solution in which a Zn ion concentration is controlled to be 0 ppm or more and 100 ppm or less, and a plating film is formed on the plating base film. Form.

発明者等は、素体表面でのめっき伸びについて、その原因を究明すべく、鋭意研究した結果、めっき液中のＺｎイオン濃度が大きな要因となっていることを見い出した。即ち、Ｚｎを含有するセラミック材料から構成された素体の場合、ＺｎがＺｎイオンとしてめっき液中に溶け出す可能性があり、めっき液のＺｎイオン濃度を管理する必要がある。   As a result of intensive studies to find out the cause of the plating elongation on the surface of the element body, the inventors have found that the Zn ion concentration in the plating solution is a major factor. That is, in the case of an element body made of a ceramic material containing Zn, Zn may be dissolved in the plating solution as Zn ions, and it is necessary to control the Zn ion concentration of the plating solution.

発明者等の実験によれば、Ｚｎイオン濃度が１００ｐｐｍを超えると、めっき伸びが顕著であるが、Ｚｎイオン濃度を１００ｐｐｍ以下の範囲に保つと、めっき伸びを抑え得ることが確認された。従って、Ｚｎイオン濃度を１００ｐｐｍ以下の範囲に保つことにより、素体表面に、めっき阻止用被覆処理を施すことなく、めっき伸びを抑え、めっき伸びによる端子電極間の耐電圧低下及び端子電極間の短絡を回避できることになる。   According to experiments by the inventors, it has been confirmed that when the Zn ion concentration exceeds 100 ppm, the plating elongation is remarkable, but when the Zn ion concentration is kept in the range of 100 ppm or less, the plating elongation can be suppressed. Therefore, by keeping the Zn ion concentration in a range of 100 ppm or less, the surface of the element body is not subjected to plating-inhibiting coating treatment, thereby suppressing plating elongation, lowering the withstand voltage between terminal electrodes due to plating elongation, and between terminal electrodes. A short circuit can be avoided.

以上述べたように、本発明によれば、素体表面にめっき阻止用被覆処理を施すことなく、めっき伸びによる端子電極間の短絡を回避し得るめっき方法を提供することである。   As described above, according to the present invention, it is an object of the present invention to provide a plating method capable of avoiding a short circuit between terminal electrodes due to plating elongation without performing a plating prevention coating process on the surface of the element body.

図１は、本発明に係るめっき方法の一実施形態に用いられるセラミック電子部品を示す断面図、図２は、図１に示したセラミック電子部品の平面図である。図示のセラミック電子部品１は、めっき処理を施す前のチップバリスタであるが、他のセラミック電子部品、例えば、チップインダクタであってもよい。このセラミック電子部品１は、素体２と、内部導体膜３と、端子電極用めっき下地膜４１とを含む。   FIG. 1 is a sectional view showing a ceramic electronic component used in an embodiment of a plating method according to the present invention, and FIG. 2 is a plan view of the ceramic electronic component shown in FIG. The illustrated ceramic electronic component 1 is a chip varistor before plating, but may be another ceramic electronic component such as a chip inductor. The ceramic electronic component 1 includes an element body 2, an internal conductor film 3, and a terminal electrode plating base film 41.

素体２は、長さ方向Ｘ、幅方向Ｙ及び厚さ方向Ｚで定義される略直方体形状である。素体２を構成するセラミック材料については、チップバリスタの場合、酸化亜鉛系のセラミック材料を挙げることができ、チップインダクタの場合、ＮｉＺｎ系またはＮｉＣｕＺｎ系のセラミック材料を挙げることができる。   The element body 2 has a substantially rectangular parallelepiped shape defined by the length direction X, the width direction Y, and the thickness direction Z. Examples of the ceramic material constituting the element body 2 include a zinc oxide-based ceramic material in the case of a chip varistor, and a NiZn-based or NiCuZn-based ceramic material in the case of a chip inductor.

内部導体膜３は、素体２の内部に埋設されている。詳しくは、内部導体膜３は、素体２の内部において厚さ方向Ｚに間隔を隔てて配置されており、長さ方向Ｘの一端が素体２の長さ方向Ｘの端面２３または２４に導出されている。   The internal conductor film 3 is embedded in the element body 2. Specifically, the inner conductor film 3 is arranged in the thickness direction Z with an interval inside the element body 2, and one end in the length direction X is on the end face 23 or 24 in the length direction X of the element body 2. Has been derived.

端子電極用めっき下地膜（以下、めっき下地膜と称する）４１は、図２に示すように、素体２の表面に形成されている。図示の実施例では、素体２の長さ方向Ｘの一端面２３に、２つのめっき下地膜４１が幅方向Ｙの間隔を隔てて形成され、同様に素体２の長さ方向Ｘの他端面２４に、２つのめっき下地膜４１が幅方向Ｙの間隔を隔てて形成されている。図示では、めっき下地膜４１が何らかの膜を介さず直接、素体２の表面に形成された構造となっているが（図１参照）、このような構造に限定されることはない。例えば、端子電極と、素体の表面との間に何らかの膜が介在した構造でもよい。   A terminal electrode plating base film (hereinafter referred to as a plating base film) 41 is formed on the surface of the element body 2 as shown in FIG. In the illustrated embodiment, two plating base films 41 are formed on one end face 23 in the length direction X of the element body 2 with an interval in the width direction Y. Two plating base films 41 are formed on the end face 24 at an interval in the width direction Y. In the figure, the plating base film 41 is formed directly on the surface of the element body 2 without any film (see FIG. 1), but is not limited to such a structure. For example, a structure in which some film is interposed between the terminal electrode and the surface of the element body may be used.

更に、めっき下地膜４１は、素体２の長さ方向Ｘの端面２３または２４において内部導体膜３に接続されている（図１参照）。めっき下地膜４１は、例えばＡｇを主成分として構成され、素体２に導電性ペーストを塗布して焼き付けることにより形成することができる。   Further, the plating base film 41 is connected to the internal conductor film 3 at the end face 23 or 24 in the length direction X of the element body 2 (see FIG. 1). The plating base film 41 is composed mainly of Ag, for example, and can be formed by applying and baking a conductive paste on the element body 2.

図１、図２に図示したセラミック電子部品１は、めっき下地膜４１にめっき膜を付着させるべく、めっき処理に付される。めっき処理工程を図３に示す。ここでは、電気めっき処理の一つの態様としてバレルめっきが採用されている。詳しく説明すると、セラミック電子部品１を通電用メディア７７とともにバレル容器７９に入れ、バレル容器７９ごとめっき液５３に浸漬する。そして、バレル容器７９を回転させながら、セラミック電子部品１に通電を行う。めっき液５３は、Ｎｉめっき膜を析出させるためのＮｉめっき液であり、Ｎｉイオン（Ｎｉ+）を含んでいる。電極板７３は、Ｎｉから構成されており、直流電源７１に接続されている。 The ceramic electronic component 1 shown in FIGS. 1 and 2 is subjected to a plating process in order to attach a plating film to the plating base film 41. The plating process is shown in FIG. Here, barrel plating is employed as one aspect of the electroplating process. More specifically, the ceramic electronic component 1 is put in the barrel container 79 together with the energization medium 77 and immersed in the plating solution 53 together with the barrel container 79. Then, the ceramic electronic component 1 is energized while rotating the barrel container 79. The plating solution 53 is a Ni plating solution for depositing a Ni plating film, and contains Ni ions (Ni + ). The electrode plate 73 is made of Ni and connected to a DC power source 71.

図４は、図３に示された工程においてセラミック電子部品の状態を示す図である。図３及び図４に示すように、電極板７３をアノード、セラミック電子部品１のめっき下地膜４１をカソードとし、電極板７３とめっき下地膜４１との間に、直流電源７１による直流電圧を印加する。これにより、めっき下地膜４１の表面にＮｉめっき膜４３を析出させることができる。   FIG. 4 is a diagram showing a state of the ceramic electronic component in the process shown in FIG. As shown in FIGS. 3 and 4, the electrode plate 73 is an anode, the plating base film 41 of the ceramic electronic component 1 is a cathode, and a DC voltage is applied between the electrode plate 73 and the plating base film 41 by a DC power source 71. To do. Thereby, the Ni plating film 43 can be deposited on the surface of the plating base film 41.

上述しためっき処理工程において、何らの考慮もされなければ、めっき下地膜４１の表面のみならず素体２の表面にもめっき膜が析出する「めっき伸び」の現象が発生し、完成品したセラミック電子部品において、隣り合う端子電極間の絶縁耐圧が低下し、最悪の場合には端子電極間短絡を招いてしまうことがあったことは前述したとおりである。   In the above-described plating process, if no consideration is given, a “plating elongation” phenomenon occurs in which the plating film is deposited not only on the surface of the plating base film 41 but also on the surface of the element body 2, and the finished ceramic As described above, in an electronic component, the withstand voltage between adjacent terminal electrodes is lowered, and in the worst case, a short circuit between the terminal electrodes may be caused.

そこで、本発明では、Ｚｎイオン濃度を０ｐｐｍ以上１００ｐｐｍ以下に管理しためっき液５３でセラミック電子部品１にめっきを行う。発明者等の実験によれば、Ｚｎイオン濃度を１００ｐｐｍ以下に保つことにより、素体２の表面に、めっき阻止用被覆処理を施すことなく、めっき伸びを抑え、めっき伸びによる隣り合うめっき下地膜４１−４１間の耐電圧低下及び短絡を回避できることがわかった。Ｚｎイオン濃度が１００ｐｐｍを超えると、めっき伸びが次第に顕著になる。その理由は、必ずしも明確ではないが、次のように推測される。   Therefore, in the present invention, the ceramic electronic component 1 is plated with the plating solution 53 in which the Zn ion concentration is controlled to 0 ppm or more and 100 ppm or less. According to the experiments by the inventors, by keeping the Zn ion concentration at 100 ppm or less, the surface of the element body 2 is not subjected to the plating-inhibiting coating treatment, and the plating elongation is suppressed. It was found that a withstand voltage drop and a short circuit between 41 and 41 can be avoided. When the Zn ion concentration exceeds 100 ppm, the plating elongation becomes more prominent. The reason is not necessarily clear, but is presumed as follows.

即ち、Ｚｎは酸にもアルカリにも弱い。このため、めっき処理の際、Ｚｎを含有するセラミック材料から構成された素体２がめっき液に触れると、素体２が少なからず溶解し、ＺｎがＺｎイオンとしてめっき液中に溶け出す可能性がある。めっき液５３中のＺｎイオンは、めっき処理量、めっき処理回数が増加するに伴って増加し、めっき液５３中のＺｎイオン濃度が上昇する。その結果、素体２の表面に付着するＺｎイオンが増加し、付着したＺｎイオンをベースにして、めっき下地膜４１から連続して延びるように、めっき皮膜が形成され、いわゆる「めっき伸び」が発生するというものである。   That is, Zn is weak against both acid and alkali. For this reason, when the element body 2 made of a ceramic material containing Zn is in contact with the plating solution during the plating process, the element body 2 may be dissolved not a little, and Zn may be dissolved into the plating solution as Zn ions. There is. The Zn ions in the plating solution 53 increase as the amount of plating treatment and the number of plating treatments increase, and the Zn ion concentration in the plating solution 53 increases. As a result, the number of Zn ions adhering to the surface of the element body 2 increases, and a plating film is formed so as to continuously extend from the plating base film 41 on the basis of the adhering Zn ions. It occurs.

本発明では、Ｚｎイオン濃度を０ｐｐｍ以上１００ｐｐｍ以下に管理しためっき液５３でセラミック電子部品１にめっきを行うから、めっき液５３中のＺｎイオン濃度を、上述した範囲に制限できる。このため、めっき伸びを抑えることができる。   In the present invention, since the ceramic electronic component 1 is plated with the plating solution 53 in which the Zn ion concentration is controlled to 0 ppm or more and 100 ppm or less, the Zn ion concentration in the plating solution 53 can be limited to the above-described range. For this reason, plating elongation can be suppressed.

めっき液５３のＺｎイオン濃度をかかる範囲内に管理するための手法としては、めっき液５３のＺｎイオン濃度を計測し、計測値に応じてめっき液５３を新たなものに交換する手法のほか、めっき液５３を一定量だけかけ流しする手法などを採用することができる。   As a method for managing the Zn ion concentration of the plating solution 53 within this range, in addition to the method of measuring the Zn ion concentration of the plating solution 53 and replacing the plating solution 53 with a new one according to the measured value, A technique of pouring a certain amount of the plating solution 53 can be employed.

最終製品としての端子電極のめっき膜の層数は、めっき膜の担うべき役割に応じて異なる。チップ状のセラミック電子部品においては、回路基板上の導体パターンに対して、端子電極がはんだ付けされるので、図３及び図４に示しためっき工程の後、Ｎｉめっき膜４１の上に、はんだ付け性の良好なめっき膜、例えばＳｎめっき膜を形成する。   The number of plating films of the terminal electrode as the final product varies depending on the role that the plating film should play. In the chip-like ceramic electronic component, since the terminal electrode is soldered to the conductor pattern on the circuit board, the solder is formed on the Ni plating film 41 after the plating step shown in FIGS. A plating film having good adhesion, for example, an Sn plating film is formed.

Ｓｎめっき膜の形成にあたっては、図５に示すように、セラミック電子部品１を、Ｓｎめっき液５５に浸漬することにより、再度電気めっきを行う。図５において、図３に現れた構成部分と同一性ある構成部分には、同一の参照符号を付し、重複説明を省略する。Ｓｎめっき液５５は、Ｓｎイオン（Ｓｎ+）を含んでいる。電極板７５は、Ｓｎから構成される。 In forming the Sn plating film, the electroplating is performed again by immersing the ceramic electronic component 1 in the Sn plating solution 55 as shown in FIG. In FIG. 5, the same reference numerals are given to the same components as those shown in FIG. 3, and the duplicate description will be omitted. The Sn plating solution 55 contains Sn ions (Sn + ). The electrode plate 75 is made of Sn.

図６は、図５に示された工程においてセラミック電子部品の状態を示す図である。図５及び図６に示すように、電極板７５をアノード、セラミック電子部品１のＮｉめっき膜４３をカソードとし、電極板７５とＮｉめっき膜４３との間に、直流電源７１による直流電圧を印加する。これにより、本来のめっき下地膜４１のみならず、Ｎｉめっき膜４３をもめっき下地膜として、その表面にＳｎめっき膜４５を析出させることができる。   FIG. 6 is a diagram showing a state of the ceramic electronic component in the process shown in FIG. As shown in FIGS. 5 and 6, the electrode plate 75 is an anode, the Ni plating film 43 of the ceramic electronic component 1 is a cathode, and a DC voltage is applied between the electrode plate 75 and the Ni plating film 43 by a DC power source 71. To do. Thereby, not only the original plating base film 41 but also the Ni plating film 43 can be used as the plating base film, and the Sn plating film 45 can be deposited on the surface thereof.

図５及び図６に示しためっき工程においても、Ｚｎイオン濃度を０ｐｐｍ以上１００ｐｐｍ以下に管理しためっき液５５でセラミック電子部品１にめっきを行う。めっき液５５のＺｎイオン濃度をかかる数値範囲に管理することによる効果、及び、めっき液５５のＺｎイオン濃度を管理するための手法については、図３及び図４に示しためっき工程で述べたのと同様であり、重複説明を省略する。   Also in the plating steps shown in FIGS. 5 and 6, the ceramic electronic component 1 is plated with a plating solution 55 in which the Zn ion concentration is controlled to be 0 ppm or more and 100 ppm or less. The effects of managing the Zn ion concentration of the plating solution 55 within such a numerical range and the technique for managing the Zn ion concentration of the plating solution 55 have been described in the plating step shown in FIGS. This is the same as in FIG.

図７は、上述しためっき方法により得られたセラミック電子部品を示す断面図、図８は、図７に示したセラミック電子部品の平面図である。図示のセラミック電子部品は、素体２と、内部導体膜３と、複数の端子電極４とを有する。端子電極４のそれぞれは、めっき下地膜４１と、Ｎｉめっき膜４３と、Ｓｎめっき膜４５とを含んでいる。図示において、先の図面に現れた構成部分と同一性ある構成部分には、同一の参照符号を付し、重複説明をできるだけ省略する。   7 is a cross-sectional view showing the ceramic electronic component obtained by the plating method described above, and FIG. 8 is a plan view of the ceramic electronic component shown in FIG. The illustrated ceramic electronic component includes an element body 2, an internal conductor film 3, and a plurality of terminal electrodes 4. Each of the terminal electrodes 4 includes a plating base film 41, a Ni plating film 43, and a Sn plating film 45. In the drawing, the same reference numerals are given to the same components as those shown in the previous drawings, and the duplicated description will be omitted as much as possible.

めっき下地膜４１、Ｎｉめっき膜４３及びＳｎめっき膜４５は、この順序で素体２の面上に積層された構造となっている。Ｎｉめっき膜４３は、膜中のＺｎ濃度が１ｗｔ％以下となっている。Ｎｉめっき膜４３のこのような組成は、図３に示したＮｉめっき工程で、Ｎｉめっき液５３のＺｎイオン濃度を０ｐｐｍ以上１００ｐｐｍ以下に管理することにより、得ることができる。   The plating base film 41, the Ni plating film 43, and the Sn plating film 45 are stacked on the surface of the element body 2 in this order. The Ni plating film 43 has a Zn concentration of 1 wt% or less in the film. Such a composition of the Ni plating film 43 can be obtained by managing the Zn ion concentration of the Ni plating solution 53 to 0 ppm or more and 100 ppm or less in the Ni plating step shown in FIG.

同様に、Ｓｎめっき膜４５も、膜中のＺｎ濃度が１ｗｔ％以下となっている。Ｓｎめっき膜４５のこのような組成は、図４に示したＳｎめっき工程で、Ｓｎめっき液５５のＺｎイオン濃度を０ｐｐｍ以上１００ｐｐｍ以下に管理することにより、得ることができる。   Similarly, the Sn plating film 45 also has a Zn concentration of 1 wt% or less. Such a composition of the Sn plating film 45 can be obtained by managing the Zn ion concentration of the Sn plating solution 55 to 0 ppm or more and 100 ppm or less in the Sn plating step shown in FIG.

次に、めっき液のＺｎイオン濃度と、めっき伸びとの関係について、実験データを挙げて説明する。   Next, the relationship between the Zn ion concentration of the plating solution and the plating elongation will be described with reference to experimental data.

＜実験１＞
まず、Ｎｉめっきに関する実験データについて説明する。この実験では、図１及び図２に示したセラミック電子部品を用い、図３及び図４のＮｉめっき工程でＮｉめっき液のＺｎイオン濃度を様々な値に設定し、Ｎｉめっき膜を形成した。Ｎｉめっき液のＺｎイオン濃度を０ｐｐｍ、１０ｐｐｍ、５０ｐｐｍ、１００ｐｐｍ及び３００ｐｐｍとしたものを、それぞれ、サンプル１〜５とする。更に、各サンプル１〜５についてＮｉめっき膜の外観を確認し、めっき伸び量を調べた。 <Experiment 1>
First, experimental data related to Ni plating will be described. In this experiment, the ceramic electronic component shown in FIGS. 1 and 2 was used, and in the Ni plating process of FIGS. 3 and 4, the Zn ion concentration of the Ni plating solution was set to various values to form a Ni plating film. Samples 1 to 5 were prepared by setting the Zn ion concentration of the Ni plating solution to 0 ppm, 10 ppm, 50 ppm, 100 ppm, and 300 ppm, respectively. Furthermore, about each sample 1-5, the external appearance of Ni plating film was confirmed and the plating elongation amount was investigated.

図９は、Ｎｉめっき液のＺｎイオン濃度とめっき伸び量との関係を示すグラフである。図９において、横軸にＮｉめっき液のＺｎイオン濃度（ｐｐｍ）をとり、縦軸にめっき伸び量（ｍｍ）をとってある。   FIG. 9 is a graph showing the relationship between the Zn ion concentration of the Ni plating solution and the plating elongation. In FIG. 9, the horizontal axis represents the Zn ion concentration (ppm) of the Ni plating solution, and the vertical axis represents the plating elongation (mm).

図９に示すように、Ｎｉめっき液のＺｎイオン濃度が０ｐｐｍ以上１００ｐｐｍ以下のとき（サンプル１〜４）、Ｎｉめっき膜のめっき伸び量は０．０４ｍｍ未満に抑えられた。   As shown in FIG. 9, when the Zn ion concentration of the Ni plating solution was 0 ppm or more and 100 ppm or less (samples 1 to 4), the plating elongation of the Ni plating film was suppressed to less than 0.04 mm.

これに対し、Ｎｉめっき液のＺｎイオン濃度が１００ｐｐｍを超えると（サンプル５）、Ｎｉめっき膜のめっき伸び量は急激に増大し、０．０４ｍｍ以上になった。   On the other hand, when the Zn ion concentration of the Ni plating solution exceeded 100 ppm (Sample 5), the amount of plating elongation of the Ni plating film increased rapidly and became 0.04 mm or more.

従って、Ｎｉめっき液のＺｎイオン濃度を０ｐｐｍ以上１００ｐｐｍ以下とすることにより、Ｎｉめっき膜のめっき伸びを抑制することができることがわかる。   Therefore, it can be understood that the plating elongation of the Ni plating film can be suppressed by setting the Zn ion concentration of the Ni plating solution to 0 ppm or more and 100 ppm or less.

更に、Ｎｉめっき膜について定量分析を行い、Ｎｉめっき膜中のＺｎ濃度を求めたところ、Ｎｉめっき液のＺｎイオン濃度が１００ｐｐｍのとき（サンプル４）、Ｎｉめっき膜中のＺｎ濃度は１ｗｔ％以下となった。これに対し、Ｎｉめっき液のＺｎイオン濃度が３００ｐｐｍのとき（サンプル５）、Ｎｉめっき膜中のＺｎ濃度は１０ｗｔ％以上となった。   Furthermore, quantitative analysis was performed on the Ni plating film, and the Zn concentration in the Ni plating film was determined. When the Zn ion concentration of the Ni plating solution was 100 ppm (sample 4), the Zn concentration in the Ni plating film was 1 wt% or less. It became. In contrast, when the Zn ion concentration of the Ni plating solution was 300 ppm (sample 5), the Zn concentration in the Ni plating film was 10 wt% or more.

＜実験２＞
次に、Ｓｎめっきに関する実験データについて説明する。この実験では、図１及び図２に示したセラミック電子部品を用い、図３及び図４のＮｉめっき工程を行った後、図５及び図６のＳｎめっき工程でＳｎめっき液のＺｎイオン濃度を様々な値に設定し、Ｓｎめっき膜を形成した。Ｓｎめっき液のＺｎイオン濃度を０ｐｐｍ、１００ｐｐｍ、２００ｐｐｍ及び３００ｐｐｍとしたものを、それぞれ、サンプル６〜９とする。なお、各サンプルのデータ数Ｎは３００とした。更に、各サンプル６〜９についてＳｎめっき膜の外観を確認し、めっき伸び不良率を調べた。 <Experiment 2>
Next, experimental data related to Sn plating will be described. In this experiment, using the ceramic electronic component shown in FIGS. 1 and 2, after performing the Ni plating process of FIGS. 3 and 4, the Zn ion concentration of the Sn plating solution was changed in the Sn plating process of FIGS. Various values were set and Sn plating films were formed. Samples 6 to 9 were prepared by setting the Zn ion concentration of the Sn plating solution to 0 ppm, 100 ppm, 200 ppm, and 300 ppm, respectively. The number of data N for each sample was 300. Furthermore, the external appearance of the Sn plating film was confirmed for each of Samples 6 to 9, and the plating elongation defect rate was examined.

図１０は、Ｓｎめっき液のＺｎイオン濃度とめっき伸び不良率との関係を示すグラフである。図１０において、横軸にＳｎめっき液のＺｎイオン濃度（ｐｐｍ）をとり、縦軸にめっき伸び不良率（％）をとってある。   FIG. 10 is a graph showing the relationship between the Zn ion concentration of the Sn plating solution and the plating elongation defect rate. In FIG. 10, the horizontal axis represents the Zn ion concentration (ppm) of the Sn plating solution, and the vertical axis represents the plating elongation defect rate (%).

図１０に示すように、Ｓｎめっき液のＺｎイオン濃度が０ｐｐｍ以上１００ｐｐｍ以下のとき（サンプル６及び７）、Ｓｎめっき膜のめっき伸び量は低い値になり、めっき伸び不良率は１０％以下に抑えられた。   As shown in FIG. 10, when the Zn ion concentration of the Sn plating solution is 0 ppm or more and 100 ppm or less (samples 6 and 7), the plating elongation amount of the Sn plating film is low, and the plating elongation defect rate is 10% or less. It was suppressed.

これに対し、Ｓｎめっき液のＺｎイオン濃度が１００ｐｐｍを超えると（サンプル８及び９）、Ｓｎめっき膜のめっき伸び量は急激に増大し、めっき伸び不良率は２０％以上になった。   On the other hand, when the Zn ion concentration of the Sn plating solution exceeded 100 ppm (samples 8 and 9), the plating elongation amount of the Sn plating film increased rapidly, and the plating elongation defect rate was 20% or more.

従って、Ｓｎめっき液のＺｎイオン濃度を０ｐｐｍ以上１００ｐｐｍ以下とすることにより、Ｓｎめっき膜のめっき伸びを抑制することができることがわかる。   Therefore, it can be understood that the plating elongation of the Sn plating film can be suppressed by setting the Zn ion concentration of the Sn plating solution to 0 ppm or more and 100 ppm or less.

また、ここでは、Ｎｉめっきに関する実験結果と、Ｓｎめっきに関する実験結果とについて説明を行ったが、他のめっき種についても、同様な実験結果が得られる。   Moreover, although the experimental result regarding Ni plating and the experimental result regarding Sn plating have been described here, similar experimental results can be obtained for other plating types.

本発明に係るめっき方法の一実施形態に用いられるセラミック電子部品を示す断面図である。It is sectional drawing which shows the ceramic electronic component used for one Embodiment of the plating method which concerns on this invention. 図１に示したセラミック電子部品の平面図である。It is a top view of the ceramic electronic component shown in FIG. 本発明に係るめっき方法の一実施形態に含まれる工程を示す図である。It is a figure which shows the process included in one Embodiment of the plating method which concerns on this invention. 図３に示された工程においてセラミック電子部品の状態を示す図である。It is a figure which shows the state of a ceramic electronic component in the process shown by FIG. 図３及び図４に示した工程の後の工程を示す図である。It is a figure which shows the process after the process shown in FIG.3 and FIG.4. 図５に示された工程においてセラミック電子部品の状態を示す図である。It is a figure which shows the state of a ceramic electronic component in the process shown by FIG. 図１乃至図６に示しためっき方法により得られたセラミック電子部品を示す断面図である。It is sectional drawing which shows the ceramic electronic component obtained by the plating method shown in FIG. 1 thru | or FIG. 図７に示したセラミック電子部品の平面図である。It is a top view of the ceramic electronic component shown in FIG. Ｎｉめっき液のＺｎイオン濃度とめっき伸び量との関係を示すグラフである。It is a graph which shows the relationship between Zn ion concentration of Ni plating solution, and the amount of plating elongation. Ｓｎめっき液のＺｎイオン濃度とめっき伸び不良率との関係を示すグラフである。It is a graph which shows the relationship between Zn ion concentration of Sn plating solution, and a plating elongation defect rate.

符号の説明Explanation of symbols

１ セラミック電子部品
２ 素体
４３ Ｎｉめっき膜
４５ Ｓｎめっき膜 DESCRIPTION OF SYMBOLS 1 Ceramic electronic component 2 Element body 43 Ni plating film 45 Sn plating film

Claims (4)

Ｚｎを含有するセラミック材料から構成された素体と、前記素体の表面に互いに間隔を隔てて配置された複数の端子電極用めっき下地膜とを含むセラミック電子部品を用意し、
Ｚｎイオン濃度を０ｐｐｍ以上１００ｐｐｍ以下に管理しためっき液中で前記セラミック電子部品に対する電気めっき処理を行い、前記めっき下地膜上にめっき膜を形成する、
めっき方法。 Preparing a ceramic electronic component including an element body made of a ceramic material containing Zn, and a plurality of terminal electrode plating base films disposed on the surface of the element body at intervals,
Performing an electroplating process on the ceramic electronic component in a plating solution in which the Zn ion concentration is controlled to 0 ppm or more and 100 ppm or less, and forming a plating film on the plating base film;
Plating method. 請求項１に記載されためっき方法であって、
前記めっき液は、Ｎｉめっき液またはＳｎめっき液である
めっき方法。 The plating method according to claim 1,
The plating method, wherein the plating solution is a Ni plating solution or a Sn plating solution. 素体と、複数の端子電極とを含むセラミック電子部品であって、
前記素体は、Ｚｎを含有するセラミック材料から構成されており、
前記端子電極は、前記素体の表面に互いに間隔を隔てて配置され、表面にめっき膜を有しており、
前記めっき膜は、請求項１または２に記載されためっき方法により形成されたものである、
セラミック電子部品。 A ceramic electronic component including an element body and a plurality of terminal electrodes,
The element body is made of a ceramic material containing Zn,
The terminal electrodes are spaced from each other on the surface of the element body, and have a plating film on the surface,
The plating film is formed by the plating method according to claim 1 or 2.
Ceramic electronic components. 請求項３に記載されたセラミック電子部品であって、
前記めっき膜中のＺｎ濃度は１ｗｔ％以下である、
セラミック電子部品。


The ceramic electronic component according to claim 3,
Zn concentration in the plating film is 1 wt% or less,
Ceramic electronic components.


JP2006026730A 2006-02-03 2006-02-03 Plating method Pending JP2007204822A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011210836A (en) * 2010-03-29 2011-10-20 Murata Mfg Co Ltd Electronic component
JP2015079897A (en) * 2013-10-18 2015-04-23 株式会社村田製作所 Method of manufacturing inductor, and inductor
WO2015146758A1 (en) * 2014-03-26 2015-10-01 株式会社村田製作所 Production method for ceramic electronic components

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011210836A (en) * 2010-03-29 2011-10-20 Murata Mfg Co Ltd Electronic component
JP2015079897A (en) * 2013-10-18 2015-04-23 株式会社村田製作所 Method of manufacturing inductor, and inductor
WO2015146758A1 (en) * 2014-03-26 2015-10-01 株式会社村田製作所 Production method for ceramic electronic components
JPWO2015146758A1 (en) * 2014-03-26 2017-04-13 株式会社村田製作所 Manufacturing method of ceramic electronic component
US10068705B2 (en) 2014-03-26 2018-09-04 Murata Manufacturing Co., Ltd. Method for manufacturing ceramic electronic component

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