JP4515334B2 - Barrel plating method and electronic component manufacturing method - Google Patents
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本発明は、バレルめっき方法、および外部電極を有する電子部品の製造方法に関する。 The present invention relates to a barrel plating method and a method for manufacturing an electronic component having an external electrode.
従来、回転式バレル内に、外部電極を有するチップ形状の電子部品（たとえば、積層セラミックコンデンサ、インダクタ、抵抗など）と、これら電子部品に通電させるための導電性メディアとを投入し、バレルをめっき液に浸漬させるとともに、これを回転させつつ、電気めっきを行うバレルめっき方法が知られている。 Conventionally, chip-shaped electronic components (for example, multilayer ceramic capacitors, inductors, resistors, etc.) having external electrodes and conductive media for energizing these electronic components are placed in a rotary barrel, and the barrel is plated. A barrel plating method in which electroplating is performed while being immersed in a liquid and rotating the liquid is known.
バレルめっき方法において、所望のめっき膜厚を得ようとする場合、そのめっき膜厚は、電流密度と時間との積で求められる積算電流量で決定される。このようなバレルめっき方法において、たとえば、低い電流密度でめっき処理を行った場合には、比較的に平滑性の高いめっき膜を得ることができるが、めっき処理に多大な時間を要するため、生産性が低下してしまい、実用性に欠ける。一方、高い電流密度でめっき処理を行った場合には、得られるめっき膜の平滑性が悪化してしまうという課題があった。 In the barrel plating method, when a desired plating film thickness is to be obtained, the plating film thickness is determined by an integrated current amount obtained by a product of current density and time. In such a barrel plating method, for example, when a plating process is performed at a low current density, a plating film having a relatively high smoothness can be obtained. It will be less practical and practical. On the other hand, when the plating process is performed at a high current density, there is a problem that the smoothness of the obtained plating film is deteriorated.
そのため、このようなバレルめっき方法においては、得られるめっき膜の平滑性と、生産性とのバランスを考慮し、所定（一定）の電流密度で金属を析出させて、めっき膜厚の均質化を図っている（たとえば、特許文献１）。 Therefore, in such a barrel plating method, in consideration of the balance between the smoothness of the plating film to be obtained and the productivity, the metal is deposited at a predetermined (constant) current density to make the plating film thickness uniform. (For example, Patent Document 1).
たとえば、特許文献１では、端子電極を有するチップ状の電子部品を製造する際に、まず、金属粉末を含むペーストを用いて、下地層を形成し、次いで、この下地層上にめっきして、金属膜からなる外皮層を形成している。なお、この特許文献１では、めっき処理を、一定の電流密度である０．２Ａ／ｄｍ２ にて行っており、さらに、めっき時間は、６０分で行っている。 For example, in Patent Document 1, when manufacturing a chip-shaped electronic component having a terminal electrode, first, a base layer is formed using a paste containing a metal powder, and then plated on the base layer. An outer skin layer made of a metal film is formed. In Patent Document 1, the plating process is performed at a constant current density of 0.2 A / dm 2 , and the plating time is 60 minutes.
一方で、生産性の向上という観点より、短時間のめっき処理で、平滑性の高いめっき膜厚を得ることが望まれている。 On the other hand, from the viewpoint of improving productivity, it is desired to obtain a highly smooth plating film thickness by a short plating process.
本発明は、このような実情に鑑みてなされ、たとえば電子部品の外部電極などの被めっき物を、めっきするためのバレルめっき方法において、短時間のめっき処理で、平滑性の高いめっき膜厚を得るためのバレルめっき方法を提供することを目的とする。また、本発明は、このようなバレルめっき方法を用いた電子部品の製造方法を提供することも目的とする。 The present invention has been made in view of such circumstances, and for example, in a barrel plating method for plating an object to be plated such as an external electrode of an electronic component, a highly smooth plating film thickness can be obtained by a short plating process. It is an object to provide a barrel plating method for obtaining the same. Another object of the present invention is to provide a method for manufacturing an electronic component using such a barrel plating method.
上記目的を達成するために、本発明に係るバレルめっき方法は、
被めっき物をバレル内に入れ、前記バレルを回転させながら、電気めっきにより前記被めっき物の表面にめっきするバレルめっき方法であって、
第１電流にて、所定のめっき膜厚を形成する第１工程と、
その後、前記第１電流よりも電流密度の大きい第２電流に切り替えて、前記第２電流にて、所定のめっき膜厚を得る第２工程と、を有する。
In order to achieve the above object, the barrel plating method according to the present invention comprises:
A barrel plating method in which an object to be plated is placed in a barrel and the surface of the object to be plated is plated by electroplating while rotating the barrel,
A first step of forming a predetermined plating film thickness with a first current;
Then, a second step of switching to a second current having a higher current density than the first current and obtaining a predetermined plating film thickness with the second current is included.
本発明のバレルめっき方法において、好ましくは、前記被めっき物の単位表面積に対する、前記第１電流の電流密度が、０．００１〜１．０Ａ／ｄｍ２ の範囲であり、
前記第２電流の電流密度が、０．０１〜２．０Ａ／ｄｍ２ の範囲である。
In the barrel plating method of the present invention, preferably, the current density of the first current with respect to a unit surface area of the object to be plated is in a range of 0.001 to 1.0 A / dm 2 .
Current density of the second current ranges from 0.01~2.0A / dm 2.
本発明のバレルめっき方法において、好ましくは、前記第２電流の電流密度を、前記第１電流の電流密度の１．２倍以上とする。 In the barrel plating method of the present invention, preferably, the current density of the second current is 1.2 times or more the current density of the first current.
本発明のバレルめっき方法において、好ましくは、所望のめっき膜厚とするために必要な積算電流量を、総積算電流量とした場合に、
前記第１電流から、前記第２電流への切り替えを、総積算電流量１００％に対して、積算電流量２０〜８０％の範囲で行う。
In the barrel plating method of the present invention, preferably, when the amount of accumulated current necessary to obtain a desired plating film thickness is the total accumulated current amount,
Switching from the first current to the second current is performed within a range of 20 to 80% of the integrated current amount with respect to 100% of the total integrated current amount.
本発明に係る電子部品の製造方法は、
外部電極を形成した素子本体を、バレル内に入れ、前記バレルを回転させながら、電気めっきにより前記外部電極の表面にめっきするバレルめっき工程を有する電子部品の製造方法であって、
前記バレルめっき工程が、第１電流にて、所定のめっき膜厚を得る第１工程と、
その後、前記第１電流よりも電流密度の大きい第２電流に切り替えて、前記第２電流にて、所定のめっき膜厚を得る第２工程と、を有する。
An electronic component manufacturing method according to the present invention includes:
A method of manufacturing an electronic component having a barrel plating step of plating the surface of the external electrode by electroplating while putting the element body in which the external electrode is formed in a barrel and rotating the barrel,
The barrel plating step is a first step of obtaining a predetermined plating film thickness with a first current;
Then, a second step of switching to a second current having a higher current density than the first current and obtaining a predetermined plating film thickness with the second current is included.
本発明の電子部品の製造方法において、好ましくは、前記第１電流と、第２電流との関係を、上述の本発明のバレルめっき方法と同様の構成とする。 In the electronic component manufacturing method of the present invention, preferably, the relationship between the first current and the second current has the same configuration as the barrel plating method of the present invention described above.
また、本発明に係る電子部品としては、外部電極を有する電子部品であれば何でも良く、特に限定されないが、積層セラミックコンデンサ、圧電素子、チップインダクタ、チップバリスタ、チップサーミスタ、チップ抵抗、その他の表面実装（ＳＭＤ）チップ型電子部品などが例示される。 The electronic component according to the present invention may be any electronic component having an external electrode, and is not particularly limited. However, the multilayer ceramic capacitor, piezoelectric element, chip inductor, chip varistor, chip thermistor, chip resistor, and other surfaces Examples thereof include a mounting (SMD) chip type electronic component.
本発明によると、バレルめっきを、所定の関係を有する第１電流と第２電流とで行うため、短時間のめっき処理で、平滑性の高いめっき膜厚を得ることができる。そして、短時間で所望のめっき膜厚を形成できることにより、生産性の向上を図ることができ、また、平滑性の高いめっき膜厚を形成できることにより、被めっき物の酸化を有効に防止することができる。 According to the present invention, since barrel plating is performed with a first current and a second current having a predetermined relationship, a highly smooth plating film thickness can be obtained with a short plating process. And by being able to form a desired plating film thickness in a short time, productivity can be improved, and by being able to form a plating film with high smoothness, oxidation of the object to be plated is effectively prevented. Can do.
さらに、本発明の方法によると、たとえば、一定の電流値でめっき処理を行った場合と比較して、少ない積算電流量（電気量）で、所望のめっき膜厚を得ることができる。そのため、めっき時のトータルエネルギー消費を少なく抑えることができる。 Furthermore, according to the method of the present invention, for example, a desired plating film thickness can be obtained with a smaller integrated current amount (electric amount) compared to the case where plating treatment is performed at a constant current value. Therefore, the total energy consumption during plating can be suppressed to a low level.
以下、本発明を、図面に示す実施形態に基づき説明する。
図１は本発明の一実施形態に係る積層セラミックコンデンサの断面図、
図２は本発明の実施例に係るめっき時における積算電流量とめっき厚さとの関係を示すグラフ、
図３〜５は比較例に係るめっき時における積算電流量とめっき厚さとの関係を示すグラフ、
図６は本発明の実施例および比較例に係るめっき時間とめっき厚さとの関係を示すグラフ、
図７（Ａ）は本発明の実施例に係るめっき膜の表面写真、図７（Ｂ）は比較例に係るめっき膜の表面写真である。
Hereinafter, the present invention will be described based on embodiments shown in the drawings.
FIG. 1 is a cross-sectional view of a multilayer ceramic capacitor according to an embodiment of the present invention.
FIG. 2 is a graph showing the relationship between the accumulated current amount and the plating thickness during plating according to an embodiment of the present invention,
3 to 5 are graphs showing the relationship between the accumulated current amount and the plating thickness during plating according to the comparative example,
FIG. 6 is a graph showing the relationship between the plating time and the plating thickness according to Examples and Comparative Examples of the present invention,
FIG. 7A is a surface photograph of a plating film according to an example of the present invention, and FIG. 7B is a surface photograph of a plating film according to a comparative example.
本実施形態においては、本発明のバレルめっき方法および電子部品の製造方法を、図１に示す積層セラミックコンデンサを例示して説明する。 In the present embodiment, the barrel plating method and the electronic component manufacturing method of the present invention will be described with reference to the multilayer ceramic capacitor shown in FIG.
積層セラミックコンデンサ
図１に示すように、本発明の一実施形態に係る積層セラミックコンデンサ１は、誘電体層２と内部電極層３とが交互に積層された構成のコンデンサ素体１０を有する。このコンデンサ素体１０の両側端部には、素体１０の内部で交互に配置された内部電極層３と各々導通する一対の外部電極４，４が形成してある。内部電極層３は、各側端面がコンデンサ素体１０の対向する２端部の表面に交互に露出するように積層してある。一対の外部電極４，４は、コンデンサ素体１０の両端部に形成され、交互に配置された内部電極層３の露出端面に接続されて、コンデンサ回路を構成する。
Multilayer Ceramic Capacitor As shown in FIG. 1, a multilayer ceramic capacitor 1 according to an embodiment of the present invention includes a capacitor body 10 having a configuration in which dielectric layers 2 and internal electrode layers 3 are alternately stacked. A pair of external electrodes 4, 4 are formed at both ends of the capacitor body 10 and are electrically connected to the internal electrode layers 3 arranged alternately in the body 10. The internal electrode layers 3 are laminated so that the side end faces are alternately exposed on the surfaces of the two opposite ends of the capacitor body 10. The pair of external electrodes 4, 4 are formed at both ends of the capacitor body 10 and are connected to the exposed end surfaces of the alternately arranged internal electrode layers 3 to constitute a capacitor circuit.
コンデンサ素体１０の外形や寸法には特に制限はなく、用途に応じて適宜設定することができ、通常、外形はほぼ直方体形状とし、寸法は通常、縦（０．４〜５．６ｍｍ）×横（０．２〜５．０ｍｍ）×高さ（０．２〜１．９ｍｍ）程度とすることができる。 The outer shape and dimensions of the capacitor body 10 are not particularly limited and can be appropriately set depending on the application. Usually, the outer shape is substantially a rectangular parallelepiped shape, and the dimensions are usually vertical (0.4 to 5.6 mm) × It can be about horizontal (0.2-5.0 mm) × height (0.2-1.9 mm).
誘電体層２は、誘電体酸化物から構成され、その材質は、特に限定されず、たとえばチタン酸カルシウム、チタン酸ストロンチウム、チタン酸バリウムなどの誘電体材料で構成される。 The dielectric layer 2 is made of a dielectric oxide, and the material thereof is not particularly limited. For example, the dielectric layer 2 is made of a dielectric material such as calcium titanate, strontium titanate, or barium titanate.
内部電極層３は、導電材を含んで構成される。内部電極層３に含有される導電材は特に限定されないが、誘電体層２の構成材料として耐還元性を有する材料を使用した場合には、卑金属を用いることができる。導電材として用いる卑金属としては、たとえば、ＮｉやＮｉ合金などが挙げられる。Ｎｉ合金としては、Ｍｎ，Ｃｒ，ＣｏおよびＡｌから選択される１種以上の元素とＮｉとの合金が好ましい。 The internal electrode layer 3 includes a conductive material. The conductive material contained in the internal electrode layer 3 is not particularly limited, but a base metal can be used when a material having reduction resistance is used as a constituent material of the dielectric layer 2. Examples of the base metal used as the conductive material include Ni and Ni alloy. As the Ni alloy, an alloy of Ni and one or more elements selected from Mn, Cr, Co and Al is preferable.
外部電極４の材質は、通常、銅や銅合金、ニッケルやニッケル合金などが用いられるが、銀や銀とパラジウムの合金なども使用することができる。外部電極４の厚みは、特に限定されないが、通常５〜１００μｍとする。 As the material of the external electrode 4, copper, a copper alloy, nickel, a nickel alloy, or the like is usually used, but silver, a silver-palladium alloy, or the like can also be used. The thickness of the external electrode 4 is not particularly limited, but is usually 5 to 100 μm.
本実施形態では、外部電極４の表面には、Ｎｉを主成分として含有する第１のめっき膜と、さらに、この第１のめっき膜の表面には、Ｓｎを主成分として含有する第２のめっき膜と、が形成される。これらのめっき膜は、積層セラミックコンデンサのハンダでの実装を可能とすることを主たる目的として、形成されるめっき膜である。本実施形態は、これらの第１のめっき膜、第２のめっき膜の少なくとも一方、特に、第１のめっき膜を、後に説明するバレルめっき方法で形成することを特徴とする。 In the present embodiment, the surface of the external electrode 4 includes a first plating film containing Ni as a main component, and the surface of the first plating film further includes a second plating containing Sn as a main component. And a plating film. These plating films are formed mainly for the purpose of enabling mounting of the multilayer ceramic capacitor with solder. The present embodiment is characterized in that at least one of the first plating film and the second plating film, in particular, the first plating film is formed by a barrel plating method described later.
積層セラミックコンデンサの製造方法
次に、本実施形態に係る積層セラミックコンデンサ１の製造方法の一例を説明する。
Method for Manufacturing Multilayer Ceramic Capacitor Next, an example of a method for manufacturing the multilayer ceramic capacitor 1 according to this embodiment will be described.
本実施形態の積層セラミックコンデンサ１は、ペーストを用いた通常の印刷法やシート法によりグリーンチップを作製し、これを焼成した後、外部電極を形成し、次いで、外部電極の表面に第１、第２のめっき膜を形成することにより製造される。 The multilayer ceramic capacitor 1 of the present embodiment is a green chip produced by a normal printing method or a sheet method using a paste, fired, and then formed external electrodes, and then the first, It is manufactured by forming a second plating film.
まず、図１に示す誘電体層２を形成するための誘電体層用ペースト、および内部電極層３を形成するための内部電極層用ペーストをそれぞれ準備する。 First, a dielectric layer paste for forming the dielectric layer 2 shown in FIG. 1 and an internal electrode layer paste for forming the internal electrode layer 3 are prepared.
誘電体層用ペーストは、誘電体磁器組成物原料と有機ビヒクルとを混練した有機系の塗料であってもよく、水系の塗料であってもよい。誘電体磁器組成物原料は、各種原料を使用して、焼成後の誘電体層２が所望の組成となるように、適宜調整すればよい。 The dielectric layer paste may be an organic paint obtained by kneading a dielectric ceramic composition material and an organic vehicle, or may be a water-based paint. The dielectric ceramic composition raw material may be appropriately adjusted using various raw materials so that the dielectric layer 2 after firing has a desired composition.
有機ビヒクルとは、バインダを有機溶剤中に溶解したものであり、有機ビヒクルに用いられるバインダは、特に限定されず、エチルセルロース、ポリビニルブチラール等の通常の各種バインダから適宜選択すればよい。また、このとき用いられる有機溶剤も特に限定されず、印刷法やシート法など、利用する方法に応じてテルピネオール、ブチルカルビトール、アセトン、トルエン等の有機溶剤から適宜選択すればよい。 The organic vehicle is obtained by dissolving a binder in an organic solvent, and the binder used in the organic vehicle is not particularly limited, and may be appropriately selected from ordinary various binders such as ethyl cellulose and polyvinyl butyral. In addition, the organic solvent used at this time is not particularly limited, and may be appropriately selected from organic solvents such as terpineol, butyl carbitol, acetone, toluene and the like according to a method to be used such as a printing method or a sheet method.
また、水溶系塗料とは、水に水溶性バインダ、分散剤等を溶解させたものであり、水溶系バインダは、特に限定されず、ポリビニルアルコール、セルロース、水溶性アクリル樹脂、エマルジョン等から適宜選択すればよい。 The water-based paint is obtained by dissolving a water-soluble binder, a dispersant, etc. in water. The water-based binder is not particularly limited, and is appropriately selected from polyvinyl alcohol, cellulose, water-soluble acrylic resin, emulsion, and the like. do it.
内部電極層用ペーストは、上述した各種導電材あるいは焼成後に上述した導電材となる各種酸化物、有機金属化合物、レジネート等と、上述した有機ビヒクルとを混練して調製される。 The internal electrode layer paste is prepared by kneading the various conductive materials described above or various oxides, organometallic compounds, resinates, and the like, which become the conductive materials described above after firing, and the above-described organic vehicle.
印刷法を用いる場合、誘電体層用ペーストおよび内部電極層用ペーストを、ＰＥＴ等の基板上に積層印刷し、所定形状に切断した後、基板から剥離してグリーンチップとする。また、シート法を用いる場合、誘電体層用ペーストを用いてグリーンシートを形成し、この上に内部電極層用ペーストを印刷した後、これらを積層してグリーンチップとする。 When the printing method is used, the dielectric layer paste and the internal electrode layer paste are laminated and printed on a substrate such as PET, cut into a predetermined shape, and then peeled from the substrate to obtain a green chip. When the sheet method is used, a dielectric layer paste is used to form a green sheet, the internal electrode layer paste is printed thereon, and these are stacked to form a green chip.
次に、このグリーンチップに脱バインダ処理、焼成、および必要に応じてアニール処理を施して、焼結体（素子本体１０）を作製する。 Next, the green chip is subjected to binder removal processing, firing, and annealing treatment as necessary, thereby producing a sintered body (element body 10).
脱バインダ処理は、通常の条件で行えばよい。たとえば、空気雰囲気において、昇温速度を５〜３００℃／時間程度、保持温度を１８０〜４００℃程度、温度保持時間を０．５〜２４時間程度とする。 The binder removal process may be performed under normal conditions. For example, in an air atmosphere, the temperature rising rate is about 5 to 300 ° C./hour, the holding temperature is about 180 to 400 ° C., and the temperature holding time is about 0.5 to 24 hours.
グリーンチップの焼成は、通常の条件で行えばよい。たとえば、導電材としてＮｉやＮｉ合金等の卑金属を用いる場合、焼成雰囲気中の酸素分圧を１０−７〜１０−３Ｐａ、昇温速度を５０〜５００℃／時間程度、保持温度を１０００〜１４００℃程度、温度保持時間を０．５〜８時間程度、冷却速度を５０〜５００℃／時間程度とする。保持温度が低すぎると緻密化が不充分となり、保持温度が高すぎると内部電極の異常焼結による電極の途切れを生じる傾向がある。 The green chip may be fired under normal conditions. For example, when a base metal such as Ni or Ni alloy is used as the conductive material, the oxygen partial pressure in the firing atmosphere is 10 −7 to 10 −3 Pa, the temperature rising rate is about 50 to 500 ° C./hour, and the holding temperature is 1000 to About 1400 ° C., temperature holding time is about 0.5 to 8 hours, and cooling rate is about 50 to 500 ° C./hour. If the holding temperature is too low, densification is insufficient, and if the holding temperature is too high, there is a tendency that the electrodes are interrupted due to abnormal sintering of the internal electrodes.
還元性雰囲気中で焼成した場合、コンデンサ素子本体にはアニールを施すことが好ましい。アニールは、誘電体層を再酸化するための処理であり、これによりＩＲ寿命を著しく長くすることができるので、信頼性が向上する。アニール処理は、通常の条件で行えばよい。たとえば、アニール雰囲気中の酸素分圧を０．１Ｐａ以上、特に０．１〜１０Ｐａ、保持温度を１１００℃以下、特に５００〜１１００℃とする。 When firing in a reducing atmosphere, it is preferable to anneal the capacitor element body. Annealing is a process for re-oxidizing the dielectric layer, and this can significantly increase the IR lifetime, thereby improving the reliability. The annealing process may be performed under normal conditions. For example, the oxygen partial pressure in the annealing atmosphere is set to 0.1 Pa or more, particularly 0.1 to 10 Pa, and the holding temperature is set to 1100 ° C. or less, particularly 500 to 1100 ° C.
次いで、得られた焼結体（素子本体１０）に、たとえば、バレル研磨やサンドブラストにより端面研磨を施し、外部電極用ペーストを印刷または転写して焼成し、外部電極４を形成する。外部電極用ペーストの焼成条件は、例えば、加湿したＮ２ とＨ２ との混合ガス中で６００〜８００℃にて１０分間〜１時間程度とすることが好ましい。また、外部電極用ペーストは、上述した各種導電材と、必要に応じて添加されるガラスフリットと、上述した有機ビヒクルと、を混練して調製される。外部電極用ペーストに、ガラスフリット含有させることにより、焼結体（素子本体１０）を構成する誘電体層２との接合性を向上させることができる。 Next, the obtained sintered body (element main body 10) is subjected to end face polishing by, for example, barrel polishing or sand blasting, and the external electrode paste is printed or transferred and baked to form the external electrode 4. The firing conditions of the external electrode paste are preferably, for example, about 10 minutes to 1 hour at 600 to 800 ° C. in a humidified mixed gas of N 2 and H 2 . The external electrode paste is prepared by kneading the above-described various conductive materials, glass frit added as necessary, and the above-described organic vehicle. By including glass frit in the external electrode paste, it is possible to improve the bondability with the dielectric layer 2 constituting the sintered body (element body 10).
次いで、外部電極４の表面に、Ｎｉを主成分として含有する第１のめっき膜を形成する。本実施形態では、この第１のめっき膜は、以下に説明するバレルめっき方法により形成する。 Next, a first plating film containing Ni as a main component is formed on the surface of the external electrode 4. In the present embodiment, the first plating film is formed by a barrel plating method described below.
まず、上記にて外部電極４を形成した複数のコンデンサ素子本体１０と、必要に応じて添加される導電性メディアと、を所定の大きさを有するバレル内に入れる。次いで、複数のコンデンサ素子本体１０の入ったバレルを、めっき浴内に浸漬させる。なお、この際には、バレル内には所定の陰極を、めっき浴内のバレル外部にはＮｉを含有する陽極を、外部回路にて通電可能な状態で、それぞれ配置する。また、バレルは、複数のコンデンサ素子本体１０がバレル内で撹拌されるように、回転可能な状態でめっき浴中に浸漬される。 First, the plurality of capacitor element bodies 10 on which the external electrodes 4 are formed as described above and conductive media added as necessary are placed in a barrel having a predetermined size. Next, the barrel containing the plurality of capacitor element bodies 10 is immersed in the plating bath. In this case, a predetermined cathode is arranged in the barrel, and an anode containing Ni is arranged outside the barrel in the plating bath in a state where electricity can be applied in an external circuit. Further, the barrel is immersed in the plating bath in a rotatable state so that the plurality of capacitor element bodies 10 are stirred in the barrel.
次いで、コンデンサ素子本体１０に形成された外部電極４の表面に、バレルめっきにより厚さが、好ましくは０．３〜１０μｍ、より好ましくは２〜４μｍのＮｉを主成分として含有する第１のめっき膜を形成する。本実施形態では、まず、所定の電流密度を有する第１電流にて、めっき処理を施し、所定のめっき膜厚を形成する。次いで、めっき電流を、第１電流の電流密度よりも大きな電流密度を有する第２電流に切り替えて、この第２電流にて、めっき処理を施し、最終的に所望のめっき膜厚を得る。 Next, a first plating containing Ni having a thickness of preferably 0.3 to 10 μm, more preferably 2 to 4 μm as a main component on the surface of the external electrode 4 formed on the capacitor element body 10 by barrel plating. A film is formed. In the present embodiment, first, a plating process is performed with a first current having a predetermined current density to form a predetermined plating film thickness. Next, the plating current is switched to a second current having a current density larger than the current density of the first current, and a plating process is performed with the second current to finally obtain a desired plating film thickness.
本実施形態では、第１電流の電流密度は、外部電極４の表面積に対して、０．００１〜１．０Ａ／ｄｍ２ の範囲とすることが好ましく、より好ましくは、０．０５〜０．１Ａ／ｄｍ２ の範囲とする。また、第２電流の電流密度は、外部電極４の表面積に対して、０．０１〜２．０Ａ／ｄｍ２ の範囲とすることが好ましく、より好ましくは０．０５〜０．１Ａ／ｄｍ２ の範囲とする。第１電流、第２電流の電流密度が低すぎると、生産性が低下してしまう。一方、第１電流、第２電流の電流密度が高すぎると、得られるめっき膜の平滑性が悪化してしまう。特に、第１電流の電流密度が高すぎると、外部電極４の表面で、Ｈ２ ガスが発生し、ピットが生じ易くなってしまう。 In the present embodiment, the current density of the first current is preferably in the range of 0.001 to 1.0 A / dm 2 with respect to the surface area of the external electrode 4, and more preferably 0.05 to 0.00. The range is 1 A / dm 2 . The current density of the second current is preferably in the range of 0.01 to 2.0 A / dm 2 , more preferably 0.05 to 0.1 A / dm 2 with respect to the surface area of the external electrode 4. The range. If the current density of the first current and the second current is too low, the productivity is lowered. On the other hand, if the current density of the first current and the second current is too high, the smoothness of the obtained plating film is deteriorated. In particular, if the current density of the first current is too high, H 2 gas is generated on the surface of the external electrode 4 and pits are easily generated.
第２電流の電流密度は、第１電流の電流密度よりも大きければ良いが、好ましくは、第２電流の電流密度は、第１電流の電流密度の１．２倍以上であり、より好ましくは１．３倍以上、さらに好ましくは１．５倍以上である。 The current density of the second current may be larger than the current density of the first current. Preferably, the current density of the second current is 1.2 times or more the current density of the first current, and more preferably 1.3 times or more, more preferably 1.5 times or more.
また、本実施形態のバレルめっき方法においては、第１電流から第２電流へと切り替えるタイミングを、次のようにすることが好ましい。すなわち、所望のめっき膜厚（第１電流により形成されるめっき膜厚と、第２電流により形成されるめっき膜厚との合計）を得るために必要な積算電流量（すなわち、総積算電流量）を１００％とした場合に、積算電流量が、総積算電流量に対して、２０〜８０％の範囲にある時に、第１電流から第２電流へと切り替えることが好ましい。 Moreover, in the barrel plating method of this embodiment, it is preferable to set the timing for switching from the first current to the second current as follows. That is, the integrated current amount (that is, the total integrated current amount) necessary to obtain a desired plating film thickness (the total of the plating film thickness formed by the first current and the plating film thickness formed by the second current). ) Is 100%, it is preferable to switch from the first current to the second current when the integrated current amount is in the range of 20 to 80% with respect to the total integrated current amount.
具体的には、たとえば、所望のめっき膜厚（たとえば、１μｍ）を得るために必要な積算電流量が、１０Ａ・ｍｉｎ．（アンペア分）である場合には、第１電流から第２電流へと切り替えるタイミングを、１０Ａ・ｍｉｎ．の２０〜８０％の範囲、すなわち、積算電流量が２〜８Ａ・ｍｉｎ．の範囲となった時とすることが好ましい。なお、上記積算電流量は、通常、供給した電流量と、供給時間と、の積で求めることができる。また、第１電流から第２電流へと切り替えるタイミングは、積算電流量が、２０〜６０％の範囲とすることがより好ましい。第１電流から第２電流へと切り替えるタイミングが早すぎると（すなわち、第１電流による積算電流量が少なすぎると）、得られるめっき膜の平滑性が悪化してしまう。一方、切り替えるタイミングが遅すぎると（すなわち、第１電流による積算電流量が多すぎると）、生産性が低下してしまう。 Specifically, for example, the integrated current amount required to obtain a desired plating film thickness (for example, 1 μm) is 10 A · min. (Ampere), the timing for switching from the first current to the second current is 10 A · min. 20 to 80%, that is, the accumulated current amount is 2 to 8 A · min. It is preferable to be in the range of. In addition, the said integrated current amount can be normally calculated | required by the product of the supplied electric current amount and supply time. Further, the timing of switching from the first current to the second current is more preferably set so that the accumulated current amount is in the range of 20 to 60%. If the timing of switching from the first current to the second current is too early (that is, if the integrated current amount due to the first current is too small), the smoothness of the resulting plated film will deteriorate. On the other hand, if the switching timing is too late (that is, if the integrated current amount due to the first current is too large), the productivity is lowered.
上記めっき浴を構成するめっき液としては、特に限定されず、たとえば、Ｎｉ金属塩を含む水溶液などが使用できる。また、このようなＮｉ金属塩を含む水溶液中には、必要に応じて、弱酸や弱塩基等からなる各種緩衝材や、アルカリ性の化合物等のめっき液の伝導性を向上させるための各種イオン伝導性物質などが含有されていても良い。 It does not specifically limit as a plating solution which comprises the said plating bath, For example, the aqueous solution containing Ni metal salt etc. can be used. Further, in such an aqueous solution containing Ni metal salt, various ion conductions for improving the conductivity of various buffer materials made of weak acid, weak base, etc., and plating solutions such as alkaline compounds, as necessary. A sexual substance may be contained.
次いで、上記にて形成したＮｉを主成分として含有する第１のめっき膜の表面に、Ｓｎを主成分とする第２のめっき膜を形成する。第２のめっき膜を形成する方法としては、陽極としてＳｎを、めっき液としてＳｎ金属塩を含有するめっき液を使用する以外は、上述の第１のめっき膜の形成方法と同様とすれば良い。第２のめっき膜の厚みは、好ましくは１〜１５μｍ、より好ましくは３〜８μｍとする。 Next, a second plating film containing Sn as a main component is formed on the surface of the first plating film containing Ni as a main component formed as described above. The method for forming the second plating film may be the same as the method for forming the first plating film except that Sn is used as the anode and a plating solution containing an Sn metal salt is used as the plating solution. . The thickness of the second plating film is preferably 1 to 15 μm, more preferably 3 to 8 μm.
このようにして製造された本発明の積層セラミックコンデンサは、ハンダ付等によりプリント基板上などに実装され、各種電子機器等に使用される。 The multilayer ceramic capacitor of the present invention thus manufactured is mounted on a printed circuit board by soldering or the like and used for various electronic devices.
本実施形態によると、外部電極４の表面に、第１、第２のめっき膜を形成するためのバレルめっきを、めっき初期には、比較的に電流密度の小さい第１電流で行い、その後、第１電流よりも高い電流密度を有する第２電流で行う。そのため、短時間のめっき処理で、平滑性の高いめっき膜厚を得ることができる。 According to this embodiment, barrel plating for forming the first and second plating films on the surface of the external electrode 4 is performed at a first current with a relatively low current density at the initial stage of plating, and then The second current having a higher current density than the first current is used. Therefore, a highly smooth plating film thickness can be obtained by a short plating process.
一方で、従来においては、バレルめっきする際の電流値を、一定の電流値で行っていたため、めっき処理を短時間化することが困難であった。従来の方法において、たとえば、めっき処理の時間を短くすることを目的として、単にめっき時の電流密度を大きくした場合には、得られるめっき膜の平坦性が悪化してしまうという問題や、外部電極４表面に、水の分解に起因するＨ２ ガスが発生してしまい、めっき膜表面に、ピットが生じてしまうという問題があった。 On the other hand, in the past, since the current value at the time of barrel plating was performed at a constant current value, it was difficult to shorten the plating process. In the conventional method, for example, when the current density during plating is simply increased for the purpose of shortening the plating processing time, the problem that the flatness of the obtained plating film deteriorates or the external electrode There was a problem that H 2 gas resulting from the decomposition of water was generated on the surface of 4 and pits were generated on the surface of the plating film.
これに対して、本実施形態では、上述の関係を有する第１電流、第２電流にて、めっき処理を行うため、このような問題を防止しつつ、短時間でのめっき処理を可能とすることができる。 On the other hand, in this embodiment, since the plating process is performed with the first current and the second current having the above-described relationship, the plating process can be performed in a short time while preventing such a problem. be able to.
しかも、本実施形態では、従来のように、一定の電流値でめっき処理を行った場合と比較して、少ない積算電流量（電気量）で、所望のめっき膜厚を得ることができる。そのため、めっき時のトータルエネルギー消費を少なく抑えることができる。なお、この理由としては、必ずしも明らかではないが、めっき反応以外の副反応（たとえば、水の分解反応など）が、効果的に抑制されていることによると考えられる。また、本実施形態によれば、上記第１電流と第２電流との大きさや、切り替えのタイミングを適宜調整することにより、めっき処理に要する時間を最適化することができる。 Moreover, in the present embodiment, a desired plating film thickness can be obtained with a smaller integrated current amount (electric amount) compared to the case where the plating process is performed with a constant current value as in the prior art. Therefore, the total energy consumption during plating can be suppressed to a low level. In addition, although not necessarily clear as this reason, it is thought that side reactions (for example, decomposition reaction of water, etc.) other than the plating reaction are effectively suppressed. Further, according to the present embodiment, the time required for the plating process can be optimized by appropriately adjusting the magnitudes of the first current and the second current and the switching timing.
以上、本発明の実施形態について説明してきたが、本発明はこうした実施形態に何等限定されるものではなく、本発明の要旨を逸脱しない範囲内において種々なる態様で実施し得ることは勿論である。 As mentioned above, although embodiment of this invention was described, this invention is not limited to such embodiment at all, Of course, in the range which does not deviate from the summary of this invention, it can implement in various aspects. .
たとえば、上述した実施形態では、本発明のバレルめっき方法によりめっきする被めっき物として、積層セラミックコンデンサの外部電極を例示したが、本発明に係るバレルめっき方法は、積層セラミックコンデンサの外部電極以外にも、適用することができる。 For example, in the above-described embodiment, the external electrode of the multilayer ceramic capacitor is exemplified as an object to be plated by the barrel plating method of the present invention. However, the barrel plating method according to the present invention is not limited to the external electrode of the multilayer ceramic capacitor. Can also be applied.
また、上述の実施形態においては、バレルめっきする際の電流を、第１電流と第２電流とで所望のめっき膜厚とする方法を例示したが、第２電流によりめっきした後に、さらに第２電流とは異なる電流密度を有する第３電流を供給しても良い。なお、この際の第３電流の電流密度は、第２電流よりも大きな値としても良いし、また、小さな値としても良い。さらに、本発明の要旨を逸脱しない範囲において、第４電流、第５電流等を供給しても良い。 Moreover, in the above-described embodiment, the method of setting the current at the time of barrel plating to a desired plating film thickness with the first current and the second current is exemplified, but after the plating with the second current, the second is further performed. A third current having a current density different from the current may be supplied. Note that the current density of the third current at this time may be larger than the second current, or may be smaller. Further, the fourth current, the fifth current, etc. may be supplied without departing from the scope of the present invention.
また、上述の実施形態では、Ｎｉを主成分とする第１のめっき膜およびＳｎを主成分とする第２のめっき膜の両方を、本発明のバレルめっき方法により形成したが、いずれか一方を本発明のバレルめっき方法により形成すれば良く、たとえば、第１のめっき膜だけを、本発明のバレルめっき方法により形成する工程を採用しても良い。 In the above-described embodiment, both the first plating film mainly composed of Ni and the second plating film mainly composed of Sn are formed by the barrel plating method of the present invention. What is necessary is just to form by the barrel plating method of this invention, for example, you may employ | adopt the process of forming only the 1st plating film by the barrel plating method of this invention.
以下、本発明を、さらに詳細な実施例に基づき説明するが、本発明は、これら実施例に限定されない。 Hereinafter, although this invention is demonstrated based on a more detailed Example, this invention is not limited to these Examples.
実施例１
まず、上述の方法に従い、図１に示すコンデンサ素子本体１０を製造した。本実施例では、誘電体層２をＢａＴｉＯ３ を主成分とする誘電体材料で形成し、内部電極層３をＮｉで形成した。
Example 1
First, the capacitor element body 10 shown in FIG. 1 was manufactured according to the method described above. In this embodiment, the dielectric layer 2 is formed of a dielectric material mainly composed of BaTiO 3 , and the internal electrode layer 3 is formed of Ni.
次いで、素子本体１０の端部に、外部電極用ペーストを塗布し、その後、乾燥し、焼付けすることにより外部電極４を形成した。本実施例では、外部電極用ペーストは、導電材としてのＣｕ粉末と、ガラスフリットと、有機ビヒクル（エチルセルロースをブチルカルビトールに溶解したもの）とを含有するペーストを使用した。また、外部電極４の厚みは、５０μｍとした。 Next, an external electrode paste was applied to the end of the element body 10, and then dried and baked to form the external electrode 4. In this example, the external electrode paste used was a paste containing Cu powder as a conductive material, glass frit, and an organic vehicle (ethyl cellulose dissolved in butyl carbitol). The thickness of the external electrode 4 was 50 μm.
バレルめっき
次いで、上記にて作製した外部電極４を有するコンデンサ素子本体１０を複数準備し、以下に説明するバレルめっき方法にて、外部電極４の表面にＮｉを主成分とする第１のめっき膜を形成した。
Barrel plating Next, a plurality of capacitor element bodies 10 having the external electrodes 4 produced as described above are prepared, and a first plating film containing Ni as a main component on the surface of the external electrodes 4 by the barrel plating method described below. Formed.
まず、複数のコンデンサ素子本体１０と、導電性メディアと、を所定の大きさを有するバレル内に入れた。次いで、複数のコンデンサ素子本体１０の入ったバレルを、めっき浴内に浸漬させた。そして、バレル内に陰極を配置するとともに、めっき浴内のバレル外部にはＮｉを含有する陽極を、それぞれ配置した。めっき浴としては、Ｎｉ金属塩を含む水溶液を使用した。 First, a plurality of capacitor element bodies 10 and conductive media were placed in a barrel having a predetermined size. Next, the barrel containing the plurality of capacitor element bodies 10 was immersed in the plating bath. And while arrange | positioning the cathode in a barrel, the anode containing Ni was each arrange | positioned outside the barrel in a plating bath. As the plating bath, an aqueous solution containing a Ni metal salt was used.
次いで、バレルを回転させながら、陽極と陰極との間に、２０Ａ（アンペア）の電流（第１電流）を、２０分の条件で流し、次いで、電流値を４０Ａに切り替えて、４０Ａの電流（第２電流）を、１５分の条件で流して、Ｎｉを主成分とする第１のめっき膜を形成した。本実施例においては、めっき厚さが２μｍとなるようにめっき処理を行った。 Next, while rotating the barrel, a current (first current) of 20 A (ampere) is allowed to flow between the anode and the cathode under the condition of 20 minutes, then the current value is switched to 40 A, and a current of 40 A ( The second plating current was applied for 15 minutes to form a first plating film containing Ni as a main component. In this example, the plating process was performed so that the plating thickness was 2 μm.
第１電流である２０Ａ、第２電流である４０Ａは、外部電極の表面積に対する電流密度に換算すると、それぞれ、０．０６Ａ／ｄｍ２ 、０．１２Ａ／ｄｍ ２ に相当する。また、総積算電流量（第１電流の積算電流量と第２電流の積算電流量との合計）は、１０００Ａ・ｍｉｎ．とし、第１電流（２０Ａ）から、第２電流（４０Ａ）への切り替えは、積算電流量が４００Ａ・ｍｉｎ．となった時点とした。すなわち、第１電流から第２電流への切り替えは、総積算電流量１００％（１０００Ａ・ｍｉｎ．）に対して、４０％（４００Ａ・ｍｉｎ．）の時点とした。 20A is a first current, 40A is a second current, in terms of current density to the surface area of the external electrodes, respectively, 0.06 A / dm 2, corresponding to 0.12A / dm 2. Further, the total accumulated current amount (the sum of the accumulated current amount of the first current and the accumulated current amount of the second current) is 1000 A · min. And switching from the first current (20 A) to the second current (40 A), the accumulated current amount is 400 A · min. It was time when it became. That is, switching from the first current to the second current was performed at a time point of 40% (400 A · min.) With respect to a total integrated current amount of 100% (1000 A · min.).
図２に積算電流量と、めっき厚さと、の関係を示す。めっき厚さの測定は、積算電流量のそれぞれ異なる試料を準備し、蛍光Ｘ線分析により行った。本実施例では、めっき厚さの測定は、それぞれ１０個の試料を用い、１０個の試料の平均値をめっき厚さとした。 FIG. 2 shows the relationship between the integrated current amount and the plating thickness. The plating thickness was measured by fluorescent X-ray analysis by preparing samples with different accumulated current amounts. In this example, for the measurement of the plating thickness, 10 samples were used, and the average value of the 10 samples was defined as the plating thickness.
比較例１
めっき時の電流を、一定電流である２０Ａとし、めっき時間を５０分とした以外は、実施例１と同様にして、めっき処理を行った。図３に、比較例１における積算電流量と、めっき厚さと、の関係を示す。
Comparative Example 1
The plating process was performed in the same manner as in Example 1 except that the current during plating was 20 A, which is a constant current, and the plating time was 50 minutes. FIG. 3 shows the relationship between the integrated current amount and the plating thickness in Comparative Example 1.
比較例２
めっき時の電流を、まず、４０Ａ、１５分の条件とし、次いで、電流を２０Ａに切り替えて、２０Ａ、２０分の条件とした以外は、実施例１と同様にして、めっき処理を行った。図４に、比較例２における積算電流量と、めっき厚さと、の関係を示す。
Comparative Example 2
The plating treatment was performed in the same manner as in Example 1 except that the current during plating was first set to 40 A for 15 minutes, and then the current was switched to 20 A to set the conditions for 20 A and 20 minutes. FIG. 4 shows the relationship between the accumulated current amount and the plating thickness in Comparative Example 2.
比較例３
めっき時の電流を、一定電流である２８．６Ａとし、めっき時間を３５分とした以外は、実施例１と同様にして、めっき処理を行った。図５に、比較例３における積算電流量と、めっき厚さと、の関係を示す。なお、２８．６Ａは、外部電極の表面積に対する電流密度に換算すると、０．０８Ａ／ｄｍ２ に相当し、実施例１のめっき時間である３５分間で、積算電流量が、実施例１と同じ１０００Ａ・ｍｉｎ．となる電流値である。
Comparative Example 3
Plating was performed in the same manner as in Example 1 except that the current during plating was 28.6 A, which was a constant current, and the plating time was 35 minutes. FIG. 5 shows the relationship between the integrated current amount and the plating thickness in Comparative Example 3. In addition, 28.6 A corresponds to 0.08 A / dm 2 when converted to the current density with respect to the surface area of the external electrode, and the integrated current amount is the same as that of Example 1 in 35 minutes which is the plating time of Example 1. 1000 A · min. Is a current value.
評価１
図２〜図５を比較することにより、次のことが確認できる。
図２より、第１電流（２０Ａ）、第２電流（４０Ａ）にてめっき処理を行った実施例１は、積算電流量を９００Ａ・ｍｉｎ．とした段階で、目標のめっき膜厚である２μｍに到達する結果となった。すなわち、以下に説明する比較例１のように積算電流量が１０００Ａ・ｍｉｎ．となるまで電流を流す必要がなく、少ない電気量（エネルギー）で所望のめっき膜厚を形成できることが確認できた。なお、実施例１においては、めっき処理の時間は、合計で３５分である。
Evaluation 1
The following can be confirmed by comparing FIGS.
As shown in FIG. 2, in Example 1 in which the plating process was performed with the first current (20 A) and the second current (40 A), the integrated current amount was 900 A · min. As a result, the target plating film thickness of 2 μm was reached. That is, as in Comparative Example 1 described below, the accumulated current amount is 1000 A · min. It was confirmed that a desired plating film thickness could be formed with a small amount of energy (energy) without having to pass a current until. In Example 1, the total plating time is 35 minutes.
図３より、一定電流である２０Ａでめっき処理を行った比較例１では、所望のめっき膜厚を得るために、積算電流量が１０００Ａ・ｍｉｎ．となるまで電流を流す必要があった。すなわち、所望のめっき膜厚を得るためには、上述の実施例１よりも多くの電気量（エネルギー）が必要であった。さらに、この比較例１では、所望のめっき膜厚を得るためには、５０分間のめっき処理を行う必要があり、上述の実施例１の３５分間よりも長い時間を要した。 3, in Comparative Example 1 in which the plating process was performed at a constant current of 20 A, the integrated current amount was 1000 A · min. In order to obtain a desired plating film thickness. It was necessary to pass a current until That is, in order to obtain a desired plating film thickness, a larger amount of electricity (energy) was required than in Example 1 described above. Furthermore, in this comparative example 1, in order to obtain a desired plating film thickness, it was necessary to perform a plating process for 50 minutes, which took a longer time than 35 minutes of the above-described example 1.
図４より、第１電流と、第２電流と、の電流密度を、上述の実施例１と反対の条件とした比較例２においては、積算電流量１０００Ａ・ｍｉｎ．となるまで電流を流しても、所望のめっき膜厚を得ることができなかった。 From FIG. 4, in Comparative Example 2 in which the current densities of the first current and the second current are opposite to those in Example 1 described above, the accumulated current amount is 1000 A · min. Even if an electric current was passed until it reached, a desired plating film thickness could not be obtained.
図５より、一定電流である２８．６Ａでめっき処理を行った比較例３では、積算電流量が１０００Ａ・ｍｉｎ．となるまで電流を流しても、所望のめっき膜厚を得ることができなかった。 From FIG. 5, in Comparative Example 3 in which the plating process was performed at a constant current of 28.6 A, the integrated current amount was 1000 A · min. Even if an electric current was passed until it reached, a desired plating film thickness could not be obtained.
評価２
図６に実施例１、比較例１〜３におけるめっき時間と、めっき厚さと、の関係を表すグラフを示す。図６より、本発明範囲内の実施例１においては、めっき時間を３５分と短い時間とした場合においても、所望のめっき膜厚を得ることができるのに対し、一定電流である２０Ａでめっき処理を行った比較例１では、めっき時間３５分では、所望のめっき膜厚の半分程度までしか形成することができないことが確認できる。また、比較例２，３においては、３５分間で、積算電流量が１０００Ａ・ｍｉｎ．となるまで電流を流しても、所望のめっき膜厚を得ることができなかった。すなわち、比較例２，３では、所望のめっき膜厚を得るためには、さらなる時間および電気量（エネルギー）が必要であることが確認できる。
Evaluation 2
The graph showing the relationship between the plating time and plating thickness in Example 1 and Comparative Examples 1 to 3 is shown in FIG. From FIG. 6, in Example 1 within the scope of the present invention, a desired plating film thickness can be obtained even when the plating time is as short as 35 minutes, while plating is performed at a constant current of 20A. In the comparative example 1 which processed, it can confirm that it can form only to about half of desired plating film thickness in 35 minutes of plating time. In Comparative Examples 2 and 3, the accumulated current amount was 1000 A · min. In 35 minutes. Even if an electric current was passed until it reached, a desired plating film thickness could not be obtained. That is, in Comparative Examples 2 and 3, it can be confirmed that further time and electricity (energy) are required to obtain a desired plating film thickness.
評価３
図７（Ａ）、図７（Ｂ）に、得られためっき膜の表面を走査型電子顕微鏡（ＳＥＭ）により測定された写真を示す。図７（Ａ）は、本発明の実施例１に係るめっき膜の表面写真であり、図７（Ｂ）は、比較例２に係るめっき膜の表面写真であり、それぞれ、積算電流量が１０００Ａ・ｍｉｎ．となるまで電流を流した後の試料の表面写真である。また、測定倍率は３５００倍とした。
Evaluation 3
FIG. 7A and FIG. 7B show photographs in which the surface of the obtained plating film is measured with a scanning electron microscope (SEM). FIG. 7 (A) is a surface photograph of the plating film according to Example 1 of the present invention, and FIG. 7 (B) is a surface photograph of the plating film according to Comparative Example 2, each having an accumulated current amount of 1000 A.・ Min. It is the surface photograph of the sample after flowing an electric current until it becomes. The measurement magnification was 3500 times.
図７（Ａ）、図７（Ｂ）より、次のことが確認できる。すなわち、比較例２（図７（Ｂ））においては、めっき膜表面に比較的に大きな塊が存在しているのに対して、本発明範囲内の実施例１（図７（Ａ））においては、このような塊は、存在せず、平滑性に優れていることが確認できる。 From FIG. 7A and FIG. 7B, the following can be confirmed. That is, in Comparative Example 2 (FIG. 7B), a relatively large lump exists on the plating film surface, whereas in Example 1 (FIG. 7A) within the scope of the present invention. It can be confirmed that such a lump does not exist and is excellent in smoothness.
１… 積層セラミックコンデンサ
１０… コンデンサ素子本体
２… 誘電体層
３… 内部電極層
４… 外部電極
DESCRIPTION OF SYMBOLS 1 ... Multilayer ceramic capacitor 10 ... Capacitor element main body 2 ... Dielectric layer 3 ... Internal electrode layer 4 ... External electrode
Claims (4)
第１電流にて、所定のめっき膜厚を形成する第１工程と、
その後、前記第１電流よりも電流密度の大きい第２電流に切り替えて、前記第２電流にて、所定のめっき膜厚を得る第２工程と、を有し、
前記被めっき物の単位表面積に対する、前記第１電流の電流密度が、０．００１〜１．０Ａ／ｄｍ２ の範囲であり、
前記第２電流の電流密度が、０．０１〜２．０Ａ／ｄｍ２ の範囲であり、
所望のめっき膜厚とするために必要な積算電流量を、総積算電流量とした場合に、
前記第１電流から、前記第２電流への切り替えを、総積算電流量１００％に対して、積算電流量２０〜８０％の範囲で行うバレルめっき方法。 A barrel plating method in which an object to be plated is placed in a barrel and the surface of the object to be plated is plated by electroplating while rotating the barrel,
A first step of forming a predetermined plating film thickness with a first current;
Then, a second step of switching to a second current having a higher current density than the first current and obtaining a predetermined plating film thickness with the second current,
The current density of the first current with respect to the unit surface area of the object to be plated is in the range of 0.001 to 1.0 A / dm 2 .
A current density of the second current is in a range of 0.01 to 2.0 A / dm 2 ;
When the accumulated current amount required to obtain the desired plating film thickness is the total accumulated current amount,
A barrel plating method in which switching from the first current to the second current is performed in a range of an accumulated current amount of 20 to 80% with respect to a total accumulated current amount of 100%.
前記バレルめっき工程が、第１電流にて、所定のめっき膜厚を得る第１工程と、
その後、前記第１電流よりも電流密度の大きい第２電流に切り替えて、前記第２電流にて、所定のめっき膜厚を得る第２工程と、を有し、
前記被めっき物の単位表面積に対する、前記第１電流の電流密度が、０．００１〜１．０Ａ／ｄｍ２ の範囲であり、
前記第２電流の電流密度が、０．０１〜２．０Ａ／ｄｍ２ の範囲であり、
所望のめっき膜厚とするために必要な積算電流量を、総積算電流量とした場合に、
前記第１電流から、前記第２電流への切り替えを、総積算電流量１００％に対して、積算電流量２０〜８０％の範囲で行う電子部品の製造方法。 An electron having a barrel plating process in which an element body on which an external electrode is formed by applying and baking an external electrode paste is placed in a barrel, and the surface of the external electrode is plated by electroplating while rotating the barrel A method of manufacturing a component,
The barrel plating step is a first step of obtaining a predetermined plating film thickness with a first current;
Then, a second step of switching to a second current having a higher current density than the first current and obtaining a predetermined plating film thickness with the second current,
The current density of the first current with respect to the unit surface area of the object to be plated is in the range of 0.001 to 1.0 A / dm 2 .
A current density of the second current is in a range of 0.01 to 2.0 A / dm 2 ;
When the accumulated current amount required to obtain the desired plating film thickness is the total accumulated current amount,
A method for manufacturing an electronic component, wherein switching from the first current to the second current is performed in a range of an integrated current amount of 20 to 80% with respect to a total integrated current amount of 100%.
The method for manufacturing an electronic component according to claim 3, wherein the current density of the second current is 1.2 times or more the current density of the first current.
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