JP2007194663A5 - - Google Patents
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- Publication number
- JP2007194663A5 JP2007194663A5 JP2007098534A JP2007098534A JP2007194663A5 JP 2007194663 A5 JP2007194663 A5 JP 2007194663A5 JP 2007098534 A JP2007098534 A JP 2007098534A JP 2007098534 A JP2007098534 A JP 2007098534A JP 2007194663 A5 JP2007194663 A5 JP 2007194663A5
- Authority
- JP
- Japan
- Prior art keywords
- conductive film
- forming
- type
- plate
- continuous
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000012212 insulator Substances 0.000 claims 8
- 239000004065 semiconductor Substances 0.000 claims 8
- 238000004519 manufacturing process Methods 0.000 claims 5
- 238000005530 etching Methods 0.000 claims 2
- 230000000149 penetrating Effects 0.000 claims 2
- 230000002093 peripheral Effects 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- 238000002360 preparation method Methods 0.000 claims 1
Claims (6)
前記下部導電膜上に電気的に連結された板型導電膜を形成する段階と、
前記板型導電膜を食刻して前記板型導電膜を貫通する相互隔離された複数個のホールを形成する段階と、
前記ホールを埋め込む絶縁膜を形成する段階と、
前記板型導電膜上に形成されている絶縁膜を除去して前記複数個のホールにのみ絶縁膜が残るようにする段階と、
前記板型導電膜に電気的に連結された上部導電膜を形成する段階とを含むことを特徴とする半導体素子のボンディングパッド構造の製造方法。 Forming a lower conductive film on a semiconductor substrate;
Forming an electrically connected plate-type conductive film on the lower conductive film;
Etching the plate-type conductive film to form a plurality of mutually isolated holes penetrating the plate-type conductive film;
Forming an insulating film filling the holes;
Removing the insulating film formed on the plate-type conductive film so that the insulating film remains only in the plurality of holes;
Forming a top conductive film electrically connected to the plate-type conductive film, and a method of manufacturing a bonding pad structure of a semiconductor device.
前記第1導電膜上に電気的に連結された第1連続的な導電膜を形成するが、前記第1連続的な導電膜を貫通しながら延びてその側壁が前記第1連続的な導電膜で取り囲まれた複数個の第1島型絶縁体を含む前記第1連続的な導電膜を形成する段階と、
前記第1連続的な導電膜に電気的に連結された第2導電膜を形成する段階を含み、
前記第1連続的な導電膜を形成する段階は、
前記下部導電膜上に電気的に連結された板型導電膜を形成する段階と、
前記板型導電膜を食刻して前記板型導電膜を貫通する相互離隔された複数個のホールを形成する段階を含み、
前記第1島型絶縁体を形成する段階は、
前記ホールを埋め込む絶縁膜を形成する段階と、
前記板型導電膜上に形成されている絶縁膜を除去して前記複数個のホールにのみ絶縁膜が残るようにする段階とを含むことを特徴とする半導体素子のボンディングパッド構造の製造方法。 Forming a first conductive film on a semiconductor substrate;
A first continuous conductive film electrically connected to the first conductive film is formed. The first continuous conductive film extends through the first continuous conductive film and has a sidewall extending through the first continuous conductive film. Forming the first continuous conductive film including a plurality of first island type insulators surrounded by
Forming a second conductive film electrically connected to the first continuous conductive film;
Forming the first continuous conductive film comprises:
Forming an electrically connected plate-type conductive film on the lower conductive film;
Etching the plate-type conductive film to form a plurality of mutually spaced holes penetrating the plate-type conductive film;
Forming the first island type insulator;
Forming an insulating film filling the holes;
Preparation of the bonding pad structure of the semi-conductor elements you; and a step to ensure that only the insulating film on the plurality of holes by removing the insulating film formed on the plate-type conductive film is left Method.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR19980059418 | 1998-12-28 | ||
KR1998P-59418 | 1998-12-28 | ||
KR1019990062154A KR100319896B1 (en) | 1998-12-28 | 1999-12-24 | Bonding pad structure of semiconductor device and fabrication method thereof |
KR1999P-62154 | 1999-12-24 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11375282A Division JP2000195866A (en) | 1998-12-28 | 1999-12-28 | Bonding pad structure of semiconductor element and its manufacture |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2007194663A JP2007194663A (en) | 2007-08-02 |
JP2007194663A5 true JP2007194663A5 (en) | 2010-08-12 |
JP5209224B2 JP5209224B2 (en) | 2013-06-12 |
Family
ID=26634489
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11375282A Pending JP2000195866A (en) | 1998-12-28 | 1999-12-28 | Bonding pad structure of semiconductor element and its manufacture |
JP2007098534A Expired - Fee Related JP5209224B2 (en) | 1998-12-28 | 2007-04-04 | Method for manufacturing bonding pad structure of semiconductor element |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11375282A Pending JP2000195866A (en) | 1998-12-28 | 1999-12-28 | Bonding pad structure of semiconductor element and its manufacture |
Country Status (2)
Country | Link |
---|---|
JP (2) | JP2000195866A (en) |
KR (1) | KR100319896B1 (en) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000195896A (en) | 1998-12-25 | 2000-07-14 | Nec Corp | Semiconductor device |
KR20020021123A (en) * | 2000-04-12 | 2002-03-18 | 롤페스 요하네스 게라투스 알베르투스 | Semiconductor device |
JP3434793B2 (en) | 2000-09-29 | 2003-08-11 | Necエレクトロニクス株式会社 | Semiconductor device and manufacturing method thereof |
KR100500416B1 (en) * | 2000-11-15 | 2005-07-12 | 주식회사 하이닉스반도체 | Method of manufacturing a pad in a semiconductor device |
KR100421043B1 (en) * | 2000-12-21 | 2004-03-04 | 삼성전자주식회사 | Integrated circuit bonding pads including conductive layers with arrays of unaligned spaced apart insulating islands therein |
JP2004095916A (en) * | 2002-08-30 | 2004-03-25 | Fujitsu Ltd | Semiconductor device and its manufacturing method |
US7692315B2 (en) | 2002-08-30 | 2010-04-06 | Fujitsu Microelectronics Limited | Semiconductor device and method for manufacturing the same |
JP4579621B2 (en) * | 2003-09-26 | 2010-11-10 | パナソニック株式会社 | Semiconductor device |
EP1519411A3 (en) * | 2003-09-26 | 2010-01-13 | Panasonic Corporation | Semiconductor device and method for fabricating the same |
US6960836B2 (en) * | 2003-09-30 | 2005-11-01 | Agere Systems, Inc. | Reinforced bond pad |
JP4759229B2 (en) * | 2004-05-12 | 2011-08-31 | ルネサスエレクトロニクス株式会社 | Semiconductor device |
JP2006024698A (en) | 2004-07-07 | 2006-01-26 | Toshiba Corp | Semiconductor apparatus and manufacturing method thereof |
KR100675275B1 (en) * | 2004-12-16 | 2007-01-26 | 삼성전자주식회사 | Semiconductor device and pad arrangement method thereof |
JP4452217B2 (en) | 2005-07-04 | 2010-04-21 | 富士通マイクロエレクトロニクス株式会社 | Semiconductor device |
JP4757660B2 (en) * | 2006-02-27 | 2011-08-24 | エルピーダメモリ株式会社 | Semiconductor device |
CN102414825B (en) | 2009-04-28 | 2014-12-24 | 三菱电机株式会社 | Power semiconductor device |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57172752A (en) * | 1981-04-16 | 1982-10-23 | Fujitsu Ltd | Semiconductor device |
JPS61239646A (en) * | 1985-04-16 | 1986-10-24 | Nec Corp | Formation of multilayer interconnection |
JP2916326B2 (en) * | 1992-06-11 | 1999-07-05 | 三菱電機株式会社 | Pad structure of semiconductor device |
US5248903A (en) * | 1992-09-18 | 1993-09-28 | Lsi Logic Corporation | Composite bond pads for semiconductor devices |
JPH06196525A (en) * | 1992-12-24 | 1994-07-15 | Kawasaki Steel Corp | Structure of bonding pad |
JPH06326150A (en) * | 1993-05-12 | 1994-11-25 | Sony Corp | Pad structure |
JP3432284B2 (en) * | 1994-07-04 | 2003-08-04 | 三菱電機株式会社 | Semiconductor device |
JPH08162532A (en) * | 1994-12-05 | 1996-06-21 | Sony Corp | Manufacture of semiconductor device |
JPH08213422A (en) * | 1995-02-07 | 1996-08-20 | Mitsubishi Electric Corp | Semiconductor device and bonding pad structure thereof |
JPH08293523A (en) * | 1995-02-21 | 1996-11-05 | Seiko Epson Corp | Semiconductor device and its manufacture |
JPH09162290A (en) * | 1995-12-04 | 1997-06-20 | Ricoh Co Ltd | Semiconductor integrated circuit device |
KR100200700B1 (en) * | 1996-02-29 | 1999-06-15 | 윤종용 | Semiconductor device with multi- pad and its manufacturing method |
JP3482779B2 (en) * | 1996-08-20 | 2004-01-06 | セイコーエプソン株式会社 | Semiconductor device and manufacturing method thereof |
JP2001085465A (en) * | 1999-09-16 | 2001-03-30 | Matsushita Electronics Industry Corp | Semiconductor device |
-
1999
- 1999-12-24 KR KR1019990062154A patent/KR100319896B1/en active IP Right Grant
- 1999-12-28 JP JP11375282A patent/JP2000195866A/en active Pending
-
2007
- 2007-04-04 JP JP2007098534A patent/JP5209224B2/en not_active Expired - Fee Related
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