JP2007194552A - Light-emitting diode - Google Patents
Light-emitting diode Download PDFInfo
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- JP2007194552A JP2007194552A JP2006013752A JP2006013752A JP2007194552A JP 2007194552 A JP2007194552 A JP 2007194552A JP 2006013752 A JP2006013752 A JP 2006013752A JP 2006013752 A JP2006013752 A JP 2006013752A JP 2007194552 A JP2007194552 A JP 2007194552A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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Abstract
Description
本発明は、各種電子、電気機器に使用される発光ダイオードに関し、光度のバラツキを容易に微調整することを可能とした発光ダイオードに関する。 The present invention relates to a light emitting diode used in various electronic and electric devices, and relates to a light emitting diode capable of easily finely adjusting a variation in luminous intensity.
従来、発光ダイオードの色調バランスをとるには、LEDチップを徹底して選別する方法や完成した発光ダイオードを検査により一つずつ振るい落とす方法があった。また、点灯方法に関しては特開2001−209049のように色度補正用発光ダイオードに流す直流電流を可変抵抗により設定する方法や、特開平5−96783のようにICチップ内に設けられた回路により発光ダイオードの光量を制御する方法等があった。
しかしながら、前記のようなLEDチップを徹底して選別する方法や完成した発光ダイオードを検査により一つずつ振るい落とす方法では歩留りが悪く、発光ダイオードの単価が高騰する結果となる。また、ダイオードに流す電流を可変抵抗により設定する方法では発光光度を測定する手段に膨大な手間を要し、補正回路を採用する方法では前述したように発光光度を測定する手段に膨大な手間を要し、補正回路そのものも複雑な回路を必要とする等多くの問題があった。そこで本発明は上記のような問題を解決し、発光ダイオードの光度を簡単な方法で微調整することにより、色調バランスを整え、安価で品質の優れた発光ダイオードを提供することを目的とする。 However, the method of thoroughly sorting the LED chips as described above or the method of shaking off the completed light emitting diodes one by one by inspection results in poor yield, resulting in a high unit price of the light emitting diodes. In addition, the method of setting the current flowing through the diode with a variable resistor requires a great deal of effort to measure the luminous intensity, and the method of using the correction circuit requires a great deal of effort to measure the luminous intensity as described above. In other words, the correction circuit itself has a number of problems such as requiring a complicated circuit. SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to solve the above-described problems and provide a light-emitting diode that is inexpensive and excellent in quality by adjusting the color balance by finely adjusting the light intensity of the light-emitting diode by a simple method.
本発明は、上記目的を達成するために、少なくとも1個のLEDチップと、該LEDチップを搭載する基台部と、前記LEDチップを前記基台部に封止部材を用いて封止してなる発光ダイオードにおいて、前記LEDチップ略上面の前記封止部材上に補正ドットを捺印することにより光度を補正する光度補正手段とする。該補正ドットは前記LEDチップの特性に合わせ、大きさおよびドット数を変化させることでさらに綿密な調整を施した発光ダイオードを得ることができる。 In order to achieve the above object, the present invention seals at least one LED chip, a base portion on which the LED chip is mounted, and the LED chip on the base portion using a sealing member. In this light emitting diode, the light intensity correction means corrects the light intensity by printing correction dots on the sealing member on the substantially upper surface of the LED chip. According to the characteristics of the LED chip, the correction dots can be changed in size and the number of dots to obtain a light-emitting diode that has been finely adjusted.
(1)少なくとも一個のLEDチップと、該LEDチップを搭載する基台部と、前記LEDチップを前記基台部に封止部材を用いて封止することからなる発光ダイオードにおいて、前記LEDチップの略上面に光度補正手段を設けたので、光度調整が容易となり、バラツキが少なく品質の優れた発光ダイオードを提供することができる。
(2)光度補正手段をLEDチップ略上面の前記封止部材上に配置した補正ドットで構成したので、発光ダイオード完成後に光度補正が可能となるため、歩留りが著しく向上でき、安価で光度変化の少ない発光ダイオードを得ることができる。
(3)LEDチップの特性に合わせ、前記補正ドットの大きさおよびドット数を変化させることができるので、色度座標の厳しい要求にも対応可能な白色用RGB発光ダイオードを構成することができる。
(1) In a light emitting diode comprising at least one LED chip, a base part on which the LED chip is mounted, and sealing the LED chip to the base part using a sealing member, Since the light intensity correction means is provided on the substantially upper surface, it is easy to adjust the light intensity, and it is possible to provide a light emitting diode having excellent quality with little variation.
(2) Since the luminous intensity correcting means is composed of correcting dots arranged on the sealing member on the substantially upper surface of the LED chip, the luminous intensity can be corrected after the light emitting diode is completed. A small number of light emitting diodes can be obtained.
(3) Since the size of the correction dot and the number of dots can be changed in accordance with the characteristics of the LED chip, it is possible to configure a white RGB light emitting diode capable of meeting strict demands on chromaticity coordinates.
本発明は液晶ディスプレイのバックライトや照明機器、電子部品モジュールに使用される。特に連続して取り付けられる照光式スイッチにおける隣り合ったスイッチの色調補正は従来個々のスイッチに取り付けられていた可変抵抗にて個別に調整する必要があるなど調整管理コストがかかっていたが、本発明によりその必要がなく、調整管理コストを削減し安定した照光品質を維持でき、大きな効果を奏することができる。 The present invention is used for a backlight of a liquid crystal display, a lighting device, and an electronic component module. In particular, the adjustment of the color tone of adjacent switches in the continuously mounted illumination type switch requires adjustment adjustment costs such as the need to individually adjust with a variable resistor attached to each individual switch. Therefore, it is not necessary to reduce the adjustment management cost, maintain stable illumination quality, and achieve a great effect.
以下、本発明の実施例について、図面を参照しながら詳細に説明する。 Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
図1は本発明の実施例を表す発光ダイオードの平面図、図2はその断面図である。図1、図2において、1は反射効率のよい絶縁部材から成る基台部、2は端子5に連結したパターン部であり、それぞれR、G、BのLEDチップ6が搭載されている。また、3はボンディングワイヤーであり前記LEDチップ6と前記パターン部2を結線している。4は前記LEDチップ6を前記基台部1に封止する封止部材である。
FIG. 1 is a plan view of a light emitting diode representing an embodiment of the present invention, and FIG. 2 is a sectional view thereof. 1 and 2,
図3は図1のLEDチップに光度補正手段として補正ドット7を捺印した発光ダイオードの平面図である。該補正ドット7は他のLEDチップ6よりも光度が高いものに対して行われる補正手段である。
図4、図5、図6に他の補正事例を示す。図4は非補正チップに比べ他の2つのLEDチップ6に光度補正手段を実施した例であり、3つのLEDチップ6の最も光度の弱いチップを基準に他の2つのLEDチップ6に補正ドット7を捺印し光度を弱めたものである。
図5は図3に示したLEDチップ6の補正ドット7の大きさおよびドット数に変化を持たせさらに微調整を施したものである。このように微調整を施すことで極めて色調精度の高い発光ダイオードを得ることができる。
図6はメッシュ状の補正ドット7を捺印して微調整を行った事例である。
FIG. 3 is a plan view of a light-emitting diode in which
4, 5 and 6 show other correction examples. FIG. 4 shows an example in which the light intensity correction means is implemented on the other two LED chips 6 as compared with the non-correction chip. The correction dots on the other two LED chips 6 are based on the lightest chip of the three LED chips 6. 7 is imprinted and the light intensity is weakened.
FIG. 5 shows the
FIG. 6 shows an example in which fine adjustment is performed by imprinting mesh-
具体的な補正工程については、各種LEDチップ単体での振り分けにより予め分類しておく方法と、LEDを前記封止部材により封止した後色度座標により補正する方法があるが、ここでは後者の方法について述べる。 As for the specific correction process, there are a method of classifying in advance by sorting by various LED chips alone and a method of correcting by the chromaticity coordinates after the LED is sealed by the sealing member. The method is described.
図7はxy色度図のx座標、y座標ともに0.25から0.35のいわゆるR、G、Bを混色させた時の白色付近を拡大して示した図であり、本発明で求められる白色の光度の範囲を該xy色度図における、x座標で0.300±0.01、y座標で0.315±0.01の範囲と仮設定し、この範囲を適合範囲とする。
該xy色度図内に、あるロットで得られた3つの混色サンプルの代表事例をS、T、U、の3つのポイントでプロットしている。ポイントSはRが弱く前記xy色度図の適合範囲の左上方に外れている。ポイントTはG、Bが弱くRが相対的に強くなっているため前記xy色度図の適合範囲の右へ外れている。ポイントUはBが強く前記xy色度図の適合範囲の左下方へ外れている。
FIG. 7 is an enlarged view of the vicinity of white when so-called R, G, and B colors of 0.25 to 0.35 are mixed in both the x and y coordinates of the xy chromaticity diagram, which is obtained by the present invention. In the xy chromaticity diagram, a range of white luminosity to be obtained is provisionally set as a range of 0.300 ± 0.01 in the x coordinate and 0.315 ± 0.01 in the y coordinate, and this range is set as the compatible range.
In the xy chromaticity diagram, representative examples of three mixed color samples obtained in a certain lot are plotted at three points of S, T, and U. The point S is weak in R and deviates to the upper left of the applicable range of the xy chromaticity diagram. Since the point T is weak in G and B and relatively strong in R, the point T deviates to the right of the applicable range of the xy chromaticity diagram. Point U has a strong B and deviates to the lower left of the applicable range of the xy chromaticity diagram.
上述した光度のバラツキを補正するため本発明の補正手段を施した結果を図8に示している。
ポイントSを示したLEDは適合範囲内に収めるためにGチップに補正ドット7を捺印をし、該Gチップの光度を弱める。これによりポイントSを示したLEDがポイントS’へと移動し、補正が完了する。
ポイントTを示したLEDは適合範囲内に収めるためにRチップに補正ドット7を捺印し、該Rチップの光度を弱める。これによりポイントTを示したLEDがポイントT’へと移動し、補正が完了する。
ポイントUを示したLEDは適合範囲内に収めるためにBチップに補正ドット7を捺印し、該Bチップの光度を弱める。これによりポイントUを示したLEDがポイントU’へと移動し、補正が完了する。
FIG. 8 shows the result of applying the correcting means of the present invention in order to correct the above-described variation in luminous intensity.
In order to keep the LED indicating the point S within the conforming range, the
The LED indicating the point T is imprinted with the
In order to keep the LED indicating the point U within the applicable range, the
このようにR、G、Bの各チップの少なくとも一つに光度を補正するための補正ドットを捺印することにより混合色点灯による色度調整を行うことが可能である。
なお、本発明に用いた補正ドットは直径数ミリ程度の大きさであるが、現在の捺印技術を用いれば直径がマイクロオーダーの捺印補正ドットを施すことが可能であり、それに伴ったドット径および数を変化させることも可能である。これによりより細かな補正をすることができ、より色調精度の高い発光ダイオードを提供することが可能である。また、前述の適合範囲以外の箇所に光度を補正したい場合でも同様の補正にて希望する座標に光度を変更することができる。
In this way, it is possible to perform chromaticity adjustment by lighting mixed colors by imprinting correction dots for correcting luminous intensity on at least one of the R, G, and B chips.
Although the correction dot used in the present invention has a diameter of about several millimeters in diameter, it is possible to apply a stamp correction dot having a diameter of micro order by using the current stamping technology. It is also possible to change the number. As a result, finer correction can be performed, and a light emitting diode with higher color tone accuracy can be provided. Further, even when it is desired to correct the light intensity at a place other than the above-described compatible range, the light intensity can be changed to a desired coordinate by the same correction.
本発明は上記実施例に限定されるものではなく、本発明の趣旨に基づいて種々の変形が可能である。例えば、3つのLEDチップの最も光度の弱いチップを基準として最も高度の強いチップに補正ドットを捺印し、次に光度の強いチップにメッシュ状の補正ドットを施して微調整を行う等である。これらを本発明の範囲から排除するものではない。 The present invention is not limited to the above embodiments, and various modifications can be made based on the spirit of the present invention. For example, the correction dot is imprinted on the most advanced chip with the weakest light intensity of the three LED chips as a reference, and then fine adjustment is performed by applying a mesh-shaped correction dot to the next strong light intensity chip. These are not excluded from the scope of the present invention.
少なくとも一個のLEDチップと、該LEDチップを搭載する基台部と、前記LEDチップを前記基台部に封止部材を用いて封止することからなる発光ダイオードにおいて、前記LEDチップの略上面に光度補正手段を設けることにより、光度調整を容易とし、従来の可変抵抗や補正回路を用いて光度を補正する等、手間やコストをかけることなくバラツキの少ない品質の優れた発光ダイオードを提供することができる。 In a light emitting diode comprising at least one LED chip, a base portion on which the LED chip is mounted, and the LED chip is sealed to the base portion using a sealing member, the LED chip is substantially on the top surface. Providing light emitting diodes with excellent quality with little variation, such as providing luminous intensity correction means, making luminous intensity adjustment easy and correcting luminous intensity using conventional variable resistors and correction circuits. Can do.
1 基台部
2 パターン部
3 ボンディングワイヤー
4 封止部材
5 端子
6 LEDチップ
7 補正ドット
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JP2006013752A JP2007194552A (en) | 2006-01-23 | 2006-01-23 | Light-emitting diode |
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JP2006013752A JP2007194552A (en) | 2006-01-23 | 2006-01-23 | Light-emitting diode |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102012207969A1 (en) | 2012-05-14 | 2013-11-14 | Robert Bosch Gmbh | Light source device e.g. LED has light source cover whose specific side portion is clouded, melted and partially removed, so that predetermined target light intensity and/or target radiation level are adjusted |
JPWO2015125515A1 (en) * | 2014-02-19 | 2017-03-30 | コニカミノルタ株式会社 | Illumination device and illumination method |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09270537A (en) * | 1996-04-01 | 1997-10-14 | Nichia Chem Ind Ltd | Photoelectric conversion device |
JP2003243722A (en) * | 2002-02-22 | 2003-08-29 | Rohm Co Ltd | Package-type light emitting apparatus |
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2006
- 2006-01-23 JP JP2006013752A patent/JP2007194552A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09270537A (en) * | 1996-04-01 | 1997-10-14 | Nichia Chem Ind Ltd | Photoelectric conversion device |
JP2003243722A (en) * | 2002-02-22 | 2003-08-29 | Rohm Co Ltd | Package-type light emitting apparatus |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102012207969A1 (en) | 2012-05-14 | 2013-11-14 | Robert Bosch Gmbh | Light source device e.g. LED has light source cover whose specific side portion is clouded, melted and partially removed, so that predetermined target light intensity and/or target radiation level are adjusted |
JPWO2015125515A1 (en) * | 2014-02-19 | 2017-03-30 | コニカミノルタ株式会社 | Illumination device and illumination method |
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