JP2007183577A - 水性アルカリフォトレジスト洗浄組成物及び該組成物を使用する方法 - Google Patents
水性アルカリフォトレジスト洗浄組成物及び該組成物を使用する方法 Download PDFInfo
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- JP2007183577A JP2007183577A JP2006303565A JP2006303565A JP2007183577A JP 2007183577 A JP2007183577 A JP 2007183577A JP 2006303565 A JP2006303565 A JP 2006303565A JP 2006303565 A JP2006303565 A JP 2006303565A JP 2007183577 A JP2007183577 A JP 2007183577A
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- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 102
- 239000000203 mixture Substances 0.000 title claims abstract description 77
- 238000004140 cleaning Methods 0.000 title claims abstract description 50
- 239000003513 alkali Substances 0.000 title claims abstract description 14
- 238000000034 method Methods 0.000 claims abstract description 29
- -1 diamine compound Chemical class 0.000 claims abstract description 18
- 239000011248 coating agent Substances 0.000 claims abstract description 17
- 238000000576 coating method Methods 0.000 claims abstract description 17
- 150000001875 compounds Chemical class 0.000 claims abstract description 14
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 13
- 239000004973 liquid crystal related substance Substances 0.000 claims abstract description 10
- GLUUGHFHXGJENI-UHFFFAOYSA-N Piperazine Chemical compound C1CNCCN1 GLUUGHFHXGJENI-UHFFFAOYSA-N 0.000 claims description 8
- 239000004094 surface-active agent Substances 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 7
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 6
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 6
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 150000007530 organic bases Chemical class 0.000 claims description 5
- VHRGRCVQAFMJIZ-UHFFFAOYSA-N cadaverine Chemical compound NCCCCCN VHRGRCVQAFMJIZ-UHFFFAOYSA-N 0.000 claims description 4
- NAQMVNRVTILPCV-UHFFFAOYSA-N hexane-1,6-diamine Chemical compound NCCCCCCN NAQMVNRVTILPCV-UHFFFAOYSA-N 0.000 claims description 4
- 150000007529 inorganic bases Chemical class 0.000 claims description 4
- KIDHWZJUCRJVML-UHFFFAOYSA-N putrescine Chemical compound NCCCCN KIDHWZJUCRJVML-UHFFFAOYSA-N 0.000 claims description 4
- IMNIMPAHZVJRPE-UHFFFAOYSA-N triethylenediamine Chemical compound C1CN2CCN1CC2 IMNIMPAHZVJRPE-UHFFFAOYSA-N 0.000 claims description 4
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 claims description 3
- 239000002736 nonionic surfactant Substances 0.000 claims description 3
- GEYOCULIXLDCMW-UHFFFAOYSA-N 1,2-phenylenediamine Chemical compound NC1=CC=CC=C1N GEYOCULIXLDCMW-UHFFFAOYSA-N 0.000 claims description 2
- 125000000217 alkyl group Chemical group 0.000 claims description 2
- 239000000908 ammonium hydroxide Substances 0.000 claims description 2
- 125000000129 anionic group Chemical group 0.000 claims description 2
- 239000003945 anionic surfactant Substances 0.000 claims description 2
- 125000004432 carbon atom Chemical group C* 0.000 claims description 2
- 125000002091 cationic group Chemical group 0.000 claims description 2
- 239000003093 cationic surfactant Substances 0.000 claims description 2
- 125000002768 hydroxyalkyl group Chemical group 0.000 claims description 2
- AOHJOMMDDJHIJH-UHFFFAOYSA-N propylenediamine Chemical compound CC(N)CN AOHJOMMDDJHIJH-UHFFFAOYSA-N 0.000 claims description 2
- 125000001453 quaternary ammonium group Chemical group 0.000 claims description 2
- 150000003868 ammonium compounds Chemical class 0.000 claims 1
- 239000003960 organic solvent Substances 0.000 abstract description 8
- 239000004065 semiconductor Substances 0.000 abstract description 5
- 238000005201 scrubbing Methods 0.000 abstract 1
- 239000002904 solvent Substances 0.000 abstract 1
- 239000007788 liquid Substances 0.000 description 10
- 238000004090 dissolution Methods 0.000 description 5
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 4
- 238000010790 dilution Methods 0.000 description 4
- 239000012895 dilution Substances 0.000 description 4
- 150000001412 amines Chemical class 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 230000005693 optoelectronics Effects 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 2
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 2
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 2
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 2
- 230000002378 acidificating effect Effects 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 2
- 150000007524 organic acids Chemical class 0.000 description 2
- 150000005622 tetraalkylammonium hydroxides Chemical class 0.000 description 2
- 238000004065 wastewater treatment Methods 0.000 description 2
- AVXURJPOCDRRFD-UHFFFAOYSA-N Hydroxylamine Chemical compound ON AVXURJPOCDRRFD-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 150000008044 alkali metal hydroxides Chemical class 0.000 description 1
- 229910000272 alkali metal oxide Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910001860 alkaline earth metal hydroxide Inorganic materials 0.000 description 1
- 239000002280 amphoteric surfactant Substances 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000012459 cleaning agent Substances 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229940116333 ethyl lactate Drugs 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910017464 nitrogen compound Inorganic materials 0.000 description 1
- 150000002830 nitrogen compounds Chemical class 0.000 description 1
- 230000020477 pH reduction Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 231100000614 poison Toxicity 0.000 description 1
- 229920005575 poly(amic acid) Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 150000005846 sugar alcohols Chemical class 0.000 description 1
- 239000003440 toxic substance Substances 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- 239000002351 wastewater Substances 0.000 description 1
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/38—Cationic compounds
- C11D1/40—Monoamines or polyamines; Salts thereof
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/02—Inorganic compounds ; Elemental compounds
- C11D3/04—Water-soluble compounds
- C11D3/044—Hydroxides or bases
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/26—Organic compounds containing nitrogen
- C11D3/30—Amines; Substituted amines ; Quaternized amines
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133514—Colour filters
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
- G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
- G03F7/0236—Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
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- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Life Sciences & Earth Sciences (AREA)
- Nonlinear Science (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Inorganic Chemistry (AREA)
- Mathematical Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Detergent Compositions (AREA)
- Optical Filters (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
【解決手段】水性アルカリフォトレジスト洗浄組成物であって、該組成物の総重量に対し、少なくとも一種のアルカリ化合物を1〜50重量%、少なくとも一種のジアミン化合物を0.1〜20重量%、水を30〜98.9重量%含み、pHが12超である組成物。フォトレジスト洗浄組成物は、使用前に実際のプロセス条件に応じて加熱及び/又は希釈することができる。更に、本発明の組成物は有機溶媒を含有しないので、通常の作業環境で安全に利用することができる。
【選択図】なし
Description
より好ましくは、前記有機塩基は水酸化テトラメチルアンモニウムである。
本発明におけるジアミン化合物の使用量は、組成物総重量に対して0.1〜20重量%の範囲であり、好ましくは1〜10重量%、より好ましくは1〜5重量%である。
操作方法
次表に示す組成の洗浄液組成物を各50mLとフォトレジストポリマー0.06gを室温にて攪拌した。フォトレジストポリマーを1mm2未満までに溶解するのに要する時間を測定した。
表1の結果からアルカリ化合物のみを添加した場合には、カラーフォトレジストポリマーを短時間で1mm2未満までに効果的に溶解することができなかったことが分かる。
操作方法
次表に示す組成の洗浄液組成物を、脱イオン水を用いて各倍率に希釈した。各希釈倍率の洗浄液組成物50mLとフォトレジストポリマー0.06gを35℃で攪拌した。フォトレジストポリマーを1mm2未満にまで溶解するのに要する時間を測定した。
(1)表4の結果から希釈後においても本発明に係る洗浄組成物は、赤色フォトレジストポリマーに対する優れた溶解作用を有することが分かる。
操作方法
次表に示す組成の洗浄液組成物を1.3倍に希釈した。希釈洗浄液組成物を各50mLとフォトレジストポリマー0.06gを、温度を変えて攪拌した。フォトレジストポリマーを1mm2未満までに溶解するのに要する時間を測定した。
表7の結果から分かるように、操作温度を上げることで本発明洗浄組成物のフォトレジスト溶解能を著しく向上させることができる。
操作方法
次表に示す組成の洗浄液組成物を各50mLとフォトレジストポリマー0.06gを室温にて攪拌した。フォトレジストポリマーを1mm2未満までに溶解するのに要する時間を測定した。
表8の結果から分かるように、先行技術に開示のアルコールアミン化合物(即ち、エタノールアミン又はジエタノールアミン)に代えてジアミン化合物(ジエチレンジアミン)を用いることにより、洗浄組成物のフォトレジスト溶解能を著しく向上させることができる。
Claims (13)
- 水性アルカリフォトレジスト洗浄組成物であって、該組成物の総重量に対し、
(a)少なくとも1種のアルカリ化合物を1〜50重量%;
(b)少なくとも1種のジアミン化合物を0.1〜20重量%;及び
(c)水を30〜98.9重量%含み、
pHが12超である組成物。 - アルカリ化合物は無機塩基又は有機塩基である、請求項1に記載の組成物。
- 水酸化アルカリ金属化合物は水酸化ナトリウム又は水酸化カリウムであり、水酸化四級アンモニウム化合物は水酸化テトラメチルアンモニウムである、請求項3に記載の組成物。
- ジアミン化合物は、エチレンジアミン、プロピレンジアミン、テトラメチレンジアミン、ペンタメチレンジアミン、ヘキサメチレンジアミン、フェニレンジアミン、ジエチレンジアミン、トリエチレンジアミン及びテトラエチレンジアミンから成る群から選択される、請求項1に記載の組成物。
- アルカリ化合物の量は10〜50重量%の範囲であり、ジアミン化合物の量は1〜10重量%の範囲であり、水の量は40〜89重量%の範囲である、請求項1に記載の組成物。
- アルカリ化合物の量は20〜50重量%の範囲であり、ジアミン化合物の量は1〜5重量%の範囲であり、水の量は45〜79重量%の範囲である、請求項6に記載の組成物。
- 洗浄組成物の表面張力を40mN/m未満とすることができる少なくとも一種の界面活性剤を組成物の総重量に対して0.01〜3重量%の量において更に含む、請求項1に記載の組成物。
- 界面活性剤はアニオン性、カチオン性又は非イオン性の界面活性剤である、請求項8に記載の組成物。
- 前記組成物のpHは13超である、請求項1に記載の組成物。
- フォトレジストは液晶ディスプレイのカラーフィルターとして使用されるカラーフォトレジストである、請求項1に記載の組成物。
- カラーフォトレジストフィルムを請求項1に記載の水性アルカリフォトレジスト洗浄組成物と接触させることにより、ガラス基板上の前記カラーフォトレジストフィルムを除去する段階を含む、液晶ディスプレイのカラーフィルターの製造方法。
- カラーフォトレジストコーティング装置及び現像液配管系統を請求項1に記載の水性アルカリフォトレジスト洗浄組成物と接触させることにより、前記カラーフォトレジストコーティング装置及び現像液配管系統からカラーフォトレジスト残渣を除去する段階を含む、カラーフォトレジストコーティング装置及び現像液配管系統からカラーフォトレジスト残渣を洗浄するための方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW094139363 | 2005-11-10 | ||
TW094139363A TWI295751B (en) | 2005-11-10 | 2005-11-10 | Aqueous alkaline photoresist cleaning composition and method using the same |
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Publication Number | Publication Date |
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JP2007183577A true JP2007183577A (ja) | 2007-07-19 |
JP5015553B2 JP5015553B2 (ja) | 2012-08-29 |
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JP2006303565A Active JP5015553B2 (ja) | 2005-11-10 | 2006-11-09 | 水性アルカリフォトレジスト洗浄組成物及び該組成物を使用する方法 |
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JP (1) | JP5015553B2 (ja) |
KR (1) | KR20070050373A (ja) |
TW (1) | TWI295751B (ja) |
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JPH11251214A (ja) * | 1998-02-27 | 1999-09-17 | Sharp Corp | タンタル薄膜回路素子の製造方法 |
JPH11311867A (ja) * | 1998-02-25 | 1999-11-09 | Kao Corp | 剥離剤組成物 |
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JPH11311867A (ja) * | 1998-02-25 | 1999-11-09 | Kao Corp | 剥離剤組成物 |
JPH11251214A (ja) * | 1998-02-27 | 1999-09-17 | Sharp Corp | タンタル薄膜回路素子の製造方法 |
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US20130164694A1 (en) * | 2010-08-13 | 2013-06-27 | Az Electronic Materials Usa Corp. | Rinse solution for lithography and pattern formation method employing the same |
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TW200719098A (en) | 2007-05-16 |
TWI295751B (en) | 2008-04-11 |
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