JP2007173873A - Solar battery device and solar battery module - Google Patents

Solar battery device and solar battery module Download PDF

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JP2007173873A
JP2007173873A JP2007082899A JP2007082899A JP2007173873A JP 2007173873 A JP2007173873 A JP 2007173873A JP 2007082899 A JP2007082899 A JP 2007082899A JP 2007082899 A JP2007082899 A JP 2007082899A JP 2007173873 A JP2007173873 A JP 2007173873A
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solar cell
copper foil
back electrode
semiconductor substrate
cell element
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JP4741538B2 (en
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Hiroaki Takahashi
宏明 高橋
Kenji Fukui
健次 福井
Katsuhiko Shirasawa
勝彦 白沢
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Kyocera Corp
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Abstract

<P>PROBLEM TO BE SOLVED: To provide a solar battery device wherein increase in resistance loss is prevented, and to provide a solar battery module. <P>SOLUTION: The device includes a semiconductor substrate; a back electrode formed on the non-photosensitive surface side of the semiconductor substrate; and a copper foil overlapped on the back electrode so as to make continuity with the back electrode, so that the copper foil is electrically connected to other solar battery device through leads. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は太陽電池素子及び太陽電池モジュールに関する。   The present invention relates to a solar cell element and a solar cell module.

従来の太陽電池装置を図４（ａ）（ｂ）に示す。図４（ａ）は断面図であり、図４（ｂ）は平面図である。図４（ａ）（ｂ）中、１１はシリコン基板、１５（１５ａ）は表面電極、１６（１６ａ）は裏面電極、１８はリード線である。シリコン基板１１内にはＮ型領域１２とＰ型領域１３とが形成されている。Ｎ型領域１２の表面には表面電極１５（１５ａ）が設けられ、Ｐ型領域１３の表面には裏面電極１６（１６ａ）が設けられている。この表面電極１５はリード線接続用のバスバー部１５ａと集電用のフィンガー部１５ｂとから成る。また、裏面電極１６もバスバー部１６ａとフィンガー部（不図示）とから成る。裏面電極１６のバスバー部１６ａには、抵抗損失を小さくするために銅箔１７がハンダ付されている。   A conventional solar cell device is shown in FIGS. 4A is a cross-sectional view, and FIG. 4B is a plan view. 4A and 4B, 11 is a silicon substrate, 15 (15a) is a front electrode, 16 (16a) is a back electrode, and 18 is a lead wire. An N-type region 12 and a P-type region 13 are formed in the silicon substrate 11. A surface electrode 15 (15 a) is provided on the surface of the N-type region 12, and a back electrode 16 (16 a) is provided on the surface of the P-type region 13. The surface electrode 15 includes a lead bar connecting bus bar portion 15a and a current collecting finger portion 15b. The back electrode 16 also includes a bus bar portion 16a and finger portions (not shown). A copper foil 17 is soldered to the bus bar portion 16a of the back electrode 16 in order to reduce resistance loss.

複数の太陽電池素子を接続するためのリード線１８は平角状の銅箔などから成り、一方端が表面電極１５（１５ａ）上の略全長にわたって配設され、その複数箇所を表面電極１５（１５ａ）と接合することによって表面電極１５のバスバー部１５ａに接続され、他方端が銅箔１７を介して裏面電極１６のバスバー部１６ａの端部にハンダ付けされて裏面電極１６に接続される。   The lead wire 18 for connecting a plurality of solar cell elements is made of a rectangular copper foil or the like, and one end thereof is disposed over substantially the entire length on the surface electrode 15 (15a). And the other end is soldered to the end of the bus bar portion 16a of the back electrode 16 via the copper foil 17 and connected to the back electrode 16.

この従来の太陽電池装置では、太陽電池素子のセル面積の増大化に伴ない、発生電流が増加したり、また表面電極１５のバスバー部１５ａが長くなり、そのために抵抗損失が増大して変換効率が低下するという問題があった。   In this conventional solar cell device, as the cell area of the solar cell element increases, the generated current increases, and the bus bar portion 15a of the surface electrode 15 becomes longer, so that the resistance loss increases and the conversion efficiency increases. There was a problem that decreased.

変換効率の低下を防止するためには、表面電極１５部分のリード線１８や裏面電極１６部分の銅箔１７の断面積を増加させればよいが、表面電極１５部分のリード線１８は、受光面積を減少させないようにするために、その厚みを厚くして断面積を増加させなければならない。   In order to prevent a decrease in conversion efficiency, the cross-sectional area of the lead wire 18 in the front electrode 15 portion and the copper foil 17 in the back electrode 16 portion may be increased. In order not to reduce the area, the thickness must be increased to increase the cross-sectional area.

ところが、リード線１８が厚くなると、このリード線１８をホットエアーやハンダ鏝で表面電極１５に溶着する際に、このホットエアーやハンダ鏝の熱が表面電極１５部分のハンダまで伝わりにくく、表面電極１５とリード線１８の溶着に時間がかかり、リード線１８の熱膨張による伸びが大きくなるという問題があった。リード線１８が伸びた状態で表面電極１５に接合されると、リード線１８が縮む際に、シリコン基板１１に圧縮応力が印加されて、シリコン基板１１に大きな反りが発生し、セル割れや電極剥がれなどを誘発し、製造歩留りが低下するという問題があった。   However, when the lead wire 18 becomes thick, when the lead wire 18 is welded to the surface electrode 15 with hot air or solder, the heat of the hot air or solder is not easily transmitted to the solder of the surface electrode 15 portion. It takes time to weld the lead wire 18 to the lead wire 18 and there is a problem that the elongation of the lead wire 18 due to thermal expansion increases. When the lead wire 18 is joined to the surface electrode 15 in a stretched state, when the lead wire 18 is shrunk, a compressive stress is applied to the silicon substrate 11 to cause a large warp in the silicon substrate 11, thereby causing cell cracks and electrodes. There has been a problem that the production yield is reduced due to peeling.

本発明はこのような従来装置の問題点に鑑みてなされたものであり、セル面積の増大にともなって発生する抵抗損失の増大と、その対向策であるバスバー部の銅箔を厚くすることによって発生するセルの反り、セル割れ、或いは電極剥がれなどの問題を解消した太陽電池装置を提供することを目的とする。   The present invention has been made in view of the problems of such a conventional device, and by increasing the resistance loss that occurs with the increase in cell area, and by increasing the copper foil of the bus bar portion, which is the counter measure. It is an object of the present invention to provide a solar cell device that solves problems such as cell warpage, cell cracking, and electrode peeling.

上記目的を達成するために本発明の請求項１に係る太陽電池素子は、半導体基板と、前記半導体基板の非受光面側に形成された裏面電極と、前記裏面電極と導通するように該裏面電極に重ねられ、他の太陽電池素子とリードを介して電気的に接続される銅箔と、を備えたものである。   In order to achieve the above object, a solar cell element according to claim 1 of the present invention includes a semiconductor substrate, a back electrode formed on the non-light-receiving surface side of the semiconductor substrate, and the back surface so as to be electrically connected to the back electrode. A copper foil that is superimposed on the electrode and electrically connected to another solar cell element via a lead.

請求項２に係る太陽電池素子は請求項１の太陽電池素子であって、前記半導体基板の受光面側に形成された表面電極をさらに備えるものである。   A solar cell element according to a second aspect is the solar cell element according to the first aspect, further comprising a surface electrode formed on the light receiving surface side of the semiconductor substrate.

請求項３に係る太陽電池素子は請求項１又は請求項２に記載の太陽電池素子であって、前記裏面電極と前記銅箔とが複数箇所で接合されているものである。   A solar cell element according to claim 3 is the solar cell element according to claim 1 or 2, wherein the back electrode and the copper foil are joined at a plurality of locations.

請求項４に係る太陽電池素子は請求項３に記載の太陽電池素子であって、前記複数の接合箇所の間隔が、前記銅箔の長手方向に沿って等間隔であるものである。   The solar cell element according to a fourth aspect is the solar cell element according to the third aspect, wherein the intervals between the plurality of joint portions are equal intervals along the longitudinal direction of the copper foil.

請求項５に係る太陽電池素子は請求項２乃至請求項４のいずれかに記載の太陽電池素子であって、前記銅箔の短手方向の幅は、前記表面電極の短手方向の幅よりも広いものである。   The solar cell element according to claim 5 is the solar cell element according to any one of claims 2 to 4, wherein the width of the copper foil in the short direction is smaller than the width of the surface electrode in the short direction. Is also wide.

請求項６に係る太陽電池モジュールは、半導体基板と、前記半導体基板の受光面側に形成された表面電極と、前記半導体基板の非受光面側に形成された裏面電極と、前記裏面電極に電気的に接続される銅箔と、を備えた複数の太陽電池素子であって、一の前記太陽電池素子の銅箔と他の前記太陽電池素子の表面電極とを電気的に接続するリードと、を備えたものである。   According to a sixth aspect of the present invention, there is provided a solar cell module comprising: a semiconductor substrate; a surface electrode formed on a light receiving surface side of the semiconductor substrate; a back electrode formed on a non-light receiving surface side of the semiconductor substrate; A plurality of solar cell elements provided with a copper foil that is electrically connected, and a lead that electrically connects the copper foil of one of the solar cell elements and the surface electrode of the other solar cell element, It is equipped with.

請求項７に係る太陽電池モジュールは請求項６に記載の太陽電池モジュールであって、前記銅箔と前記リードとは、前記銅箔のうち、前記他の半導体基板側の端部で電気的に接続するものである。   The solar cell module according to claim 7 is the solar cell module according to claim 6, wherein the copper foil and the lead are electrically connected to an end portion on the other semiconductor substrate side of the copper foil. To connect.

請求項８に係る太陽電池モジュールは請求項６又は請求項７に記載の太陽電池モジュールであって、前記リードの形状は、帯状からなるとともに、前記リードの短手方向の幅が前記銅箔の短手方向の幅よりも狭いものである。   A solar cell module according to claim 8 is the solar cell module according to claim 6 or claim 7, wherein the shape of the lead is a belt-like shape, and the width of the lead in the short direction is that of the copper foil. It is narrower than the width in the short direction.

以上のように、本発明に係る発明によれば、銅箔と裏面電極とを電流が通過する際に、裏面電極だけの場合よりも銅箔分の体積が増加するため、直列抵抗を抑制することができる。   As described above, according to the invention of the present invention, when the current passes through the copper foil and the back electrode, the volume of the copper foil increases as compared with the case of using only the back electrode, so that the series resistance is suppressed. be able to.

また、本発明に係る発明によれば、銅箔を表面電極に複数箇所で接合することから、基板の反りをより効果的に小さくすることができる。   Moreover, according to the invention which concerns on this invention, since copper foil is joined to a surface electrode in multiple places, the curvature of a board | substrate can be made smaller more effectively.

さらに、本発明に係る発明によれば、太陽電池装置で抵抗損失が増大して変換効率が低下するという問題を抑制することができる。   Furthermore, according to the invention according to the present invention, it is possible to suppress the problem that the resistance loss increases and the conversion efficiency decreases in the solar cell device.

以下、本発明に係る発明の実施形態を添付図面に基づき詳細に説明する。図１（ａ）は請求項１および請求項２に係る発明の一実施形態を示す断面図、図１（ｂ）は平面図であり、１は半導体基板、５は表面電極、７は裏面電極、９はリード線である。   Embodiments of the present invention will be described in detail below with reference to the accompanying drawings. FIG. 1A is a cross-sectional view showing an embodiment of the invention according to claims 1 and 2, FIG. 1B is a plan view, 1 is a semiconductor substrate, 5 is a front electrode, and 7 is a back electrode. , 9 are lead wires.

半導体基板１は、厚み０．３ｍｍ程度の単結晶シリコンや多結晶シリコンなどから成る。この半導体基板１内には、Ｎ型領域２とＰ型領域３があり、Ｎ型領域２とＰ型領域３との界面部分で半導体接合部４が形成される。このＮ型領域２はＰ型のシリコン基板１を拡散炉中に配置して、オキシ塩化リン（ＰＯＣｌ３）中で加熱することによって、シリコン基板１の全体の表面部にリン原子を拡散させ、その後に側面部と底面部の拡散層を除去することにより、厚み０．３〜０．４μｍ程度に形成する。なお、この半導体基板１は単結晶ガリウム砒素などで形成してもよい。 The semiconductor substrate 1 is made of single crystal silicon or polycrystalline silicon having a thickness of about 0.3 mm. In this semiconductor substrate 1, there are an N-type region 2 and a P-type region 3, and a semiconductor junction 4 is formed at an interface portion between the N-type region 2 and the P-type region 3. The N-type region 2 has a P-type silicon substrate 1 placed in a diffusion furnace and heated in phosphorus oxychloride (POCl 3 ) to diffuse phosphorus atoms over the entire surface of the silicon substrate 1. Thereafter, the diffusion layers on the side and bottom portions are removed to form a thickness of about 0.3 to 0.4 μm. The semiconductor substrate 1 may be formed of single crystal gallium arsenide or the like.

Ｎ型領域２の表面部分には、表面電極５が形成されている。この表面電極５は、リード線９を接続するためのバスバー部５ａとこのバスバー部５ａと交差して分岐して形成された集電用のフィンガー部５ｂとから成る。バスバー部５ａは基板１の略全域にわたって二本平行に形成されており、フィンガー部５ｂはバスバー部５ｂに交差して多数本が基板１の略全長にわたって形成されている。バスバー部５ａは例えば２ｍｍ程度の幅に形成され、フィンガー部５ｂは例えば０．２ｍｍ程度の幅に形成される。このような表面電極５は、例えば銀粉末、ガラスフリット、結合剤、および溶剤などから成るペーストをスクリーン印刷して７００〜８００℃程度の温度で焼き付け、全体をハンダ層で被覆することにより形成される。   A surface electrode 5 is formed on the surface portion of the N-type region 2. The surface electrode 5 includes a bus bar portion 5a for connecting the lead wire 9 and a current collecting finger portion 5b formed by crossing the bus bar portion 5a and branching. Two bus bar portions 5 a are formed in parallel over substantially the entire area of the substrate 1, and many finger portions 5 b intersect the bus bar portion 5 b and are formed over substantially the entire length of the substrate 1. The bus bar portion 5a is formed with a width of about 2 mm, for example, and the finger portions 5b are formed with a width of about 0.2 mm, for example. Such a surface electrode 5 is formed by screen-printing a paste made of, for example, silver powder, glass frit, a binder, and a solvent, baking the paste at a temperature of about 700 to 800 ° C., and covering the whole with a solder layer. The

基板１の表面側には、図示されていないが、例えば窒化シリコン膜などから成る反射防止膜が形成される。このような反射防止膜は例えばプラズマＣＶＤ法などで形成される。   Although not shown, an antireflection film made of, for example, a silicon nitride film is formed on the surface side of the substrate 1. Such an antireflection film is formed by, for example, a plasma CVD method.

基板１の裏面側には裏面電極７が設けられている。この裏面電極７も、リード線９を接続するためのバスバー部７ａとこのバスバー部７ａと交差して分岐して多数本形成されるフィンガー部（不図示）とから成る。バスバー部７ａは基板１の略全長にわたって二本平行に形成されており、フィンガー部はバスバー部７ａに交差して多数本が基板１の略全域にわたって形成されている。バスバー部７ａは例えば５ｍｍ程度の幅に形成され、フィンガー部は例えば０．５ｍｍ程度の幅に形成される。基板１の裏面側は、受光面積の減少を考慮しなくてもよいことから、表面電極５のバスバー部５ａよりも幅広に形成でき、裏面電極７側での抵抗損失を低減できる。このような裏面電極７は、例えば銀粉末、ガラスフリット、結合剤、および溶剤などから成るペーストをスクリーン印刷して焼き付け、ハンダ層で被覆することにより形成される。なお、裏面電極７は、バスバー部７ａとフィンガー部７ｂを交差して設ける場合に限らず、基板１の裏面側の全面に設けてもよい。   A back electrode 7 is provided on the back side of the substrate 1. The back electrode 7 is also composed of a bus bar portion 7a for connecting the lead wire 9 and a plurality of finger portions (not shown) formed by branching and intersecting the bus bar portion 7a. Two bus bar portions 7a are formed in parallel over substantially the entire length of the substrate 1, and a plurality of finger portions are formed over substantially the entire area of the substrate 1 so as to intersect the bus bar portion 7a. The bus bar portion 7a is formed with a width of about 5 mm, for example, and the finger portions are formed with a width of about 0.5 mm, for example. Since it is not necessary to consider the reduction of the light receiving area on the back surface side of the substrate 1, it can be formed wider than the bus bar portion 5a of the front electrode 5, and the resistance loss on the back electrode 7 side can be reduced. Such a back electrode 7 is formed by screen-printing and baking a paste made of, for example, silver powder, glass frit, a binder, and a solvent, and coating with a solder layer. The back electrode 7 is not limited to the case where the bus bar portion 7a and the finger portion 7b are provided to intersect with each other, but may be provided on the entire back surface side of the substrate 1.

この裏面電極７上には銅箔８が貼りつけられている。この銅箔８は、幅５ｍｍ程度、厚み０．１ｍｍ程度に形成される。このような銅箔８を裏面電極７のバスバー部７ａ上に例えば等間隔に５点で接合する。このように裏面電極７のバスバー部７ａと銅箔８を複数箇所のみで接合すると、温度変化によって銅箔８の長さが変化しても、銅箔８が切断したり、基板１に反りを生じることがない。   A copper foil 8 is attached on the back electrode 7. The copper foil 8 is formed with a width of about 5 mm and a thickness of about 0.1 mm. Such copper foil 8 is joined to the bus bar portion 7a of the back electrode 7 at, for example, five points at equal intervals. In this way, when the bus bar portion 7a of the back electrode 7 and the copper foil 8 are joined only at a plurality of locations, even if the length of the copper foil 8 changes due to a temperature change, the copper foil 8 is cut or warped on the substrate 1. It does not occur.

表面電極５のバスバー部５ａと裏面電極７のバスバー部７ａをリード線９で接続する。このリード線９は、図２（ａ）（ｂ）に示すように、直径０．０５〜０．１ｍｍ程度の銅の細線９ａが９０〜３６０本程度同心円状に最密充填され、捩じることで縒り線とされている。なお、図２（ａ）はリード線９の断面図であり、図２（ｂ）はリード線９の側面図である。   The bus bar portion 5 a of the front electrode 5 and the bus bar portion 7 a of the back electrode 7 are connected by lead wires 9. As shown in FIGS. 2 (a) and 2 (b), the lead wire 9 is concentrically filled with about 90 to 360 thin copper wires 9a having a diameter of about 0.05 to 0.1 mm and twisted. It is said that it is a snarling line. 2A is a cross-sectional view of the lead wire 9, and FIG. 2B is a side view of the lead wire 9. As shown in FIG.

このリード線９における表面電極５のバスバー部５ａ側は、図3 に示すように、バスバー部５ａの長さ方向における両端部の二点で接合される。このように、リード線９を縒り線で構成して、表面電極５のバスバー部５ａにホットエアー１０などで接合する場合、リード線９は縒りの方向ｘに、基板１とは所定の角度をもって延びたり縮んだりするので、基板１の幅方向ｙでの伸びや縮みは、従来の平角銅箔に比べてはるかに小さくなる。したがって、基板１が１５０ｍｍ角程度に大型化しても基板１の反りを極力小さくできる。   As shown in FIG. 3, the lead wire 9 is joined at two points at both ends in the length direction of the bus bar portion 5a. As described above, when the lead wire 9 is formed of a twisted wire and joined to the bus bar portion 5a of the surface electrode 5 with hot air 10 or the like, the lead wire 9 has a predetermined angle with the substrate 1 in the turn direction x. Since the substrate 1 extends or contracts, the expansion or contraction in the width direction y of the substrate 1 is much smaller than that of the conventional rectangular copper foil. Therefore, even if the substrate 1 is enlarged to about 150 mm square, the warpage of the substrate 1 can be minimized.

本発明に係る発明の太陽電池装置に用いられる太陽電池素子を示す図であり、（ａ）は断面図、（ｂ）は平面図である。It is a figure which shows the solar cell element used for the solar cell apparatus of the invention which concerns on this invention, (a) is sectional drawing, (b) is a top view. 本発明に係る発明の太陽電池装置に用いられるリード線を示す図であり、（ａ）は断面図、（ｂ）は側面図である。It is a figure which shows the lead wire used for the solar cell apparatus of the invention which concerns on this invention, (a) is sectional drawing, (b) is a side view. 本発明に係る太陽電池装置におけるリード線の接続の接続方法を示す図である。It is a figure which shows the connection method of the connection of the lead wire in the solar cell apparatus which concerns on this invention. 太陽電池装置を示す図であり、（ａ）は断面図、（ｂ）は平面図である。It is a figure which shows a solar cell apparatus, (a) is sectional drawing, (b) is a top view.

符号の説明Explanation of symbols

１：基板
５：表面電極
６：表面電極側の銅箔
７：裏面電極
８：裏面電極側の銅箔
９：リード線 1: Substrate 5: Surface electrode 6: Copper foil on the surface electrode side 7: Back electrode 8: Copper foil on the back electrode side 9: Lead wire

Claims (8)

半導体基板と、
前記半導体基板の非受光面側に形成された裏面電極と、
前記裏面電極と導通するように該裏面電極に重ねられ、他の太陽電池素子とリードを介して電気的に接続される銅箔と、
を備えた太陽電池素子。 A semiconductor substrate;
A back electrode formed on the non-light-receiving surface side of the semiconductor substrate;
A copper foil that is superimposed on the back electrode so as to be electrically connected to the back electrode, and is electrically connected to other solar cell elements via leads;
A solar cell element comprising: 前記半導体基板の受光面側に形成された表面電極をさらに備えることを特徴とする請求項１に記載の太陽電池素子。   The solar cell element according to claim 1, further comprising a surface electrode formed on a light receiving surface side of the semiconductor substrate. 前記裏面電極と前記銅箔とが複数箇所で接合されていることを特徴とする請求項１又は請求項２に記載の太陽電池素子。   The solar cell element according to claim 1 or 2, wherein the back electrode and the copper foil are joined at a plurality of locations. 前記複数の接合箇所の間隔が、前記銅箔の長手方向に沿って等間隔であることを特徴とする請求項３に記載の太陽電池素子。   4. The solar cell element according to claim 3, wherein the intervals between the plurality of joint portions are equal intervals along the longitudinal direction of the copper foil. 前記銅箔の短手方向の幅は、前記表面電極の短手方向の幅よりも広いことを特徴とする請求項２乃至請求項４のいずれかに記載の太陽電池素子。   5. The solar cell element according to claim 2, wherein a width of the copper foil in a short direction is wider than a width of the surface electrode in a short direction. 半導体基板と、
前記半導体基板の受光面側に形成された表面電極と、
前記半導体基板の非受光面側に形成された裏面電極と、
前記裏面電極に電気的に接続される銅箔と、
を備えた複数の太陽電池素子であって、
一の前記太陽電池素子の銅箔と他の前記太陽電池素子の表面電極とを電気的に接続するリードと、
を備えた太陽電池モジュール。 A semiconductor substrate;
A surface electrode formed on the light-receiving surface side of the semiconductor substrate;
A back electrode formed on the non-light-receiving surface side of the semiconductor substrate;
A copper foil electrically connected to the back electrode;
A plurality of solar cell elements comprising:
A lead for electrically connecting the copper foil of one solar cell element and the surface electrode of the other solar cell element;
Solar cell module with 前記銅箔と前記リードとは、前記銅箔のうち、前記他の半導体基板側の端部で電気的に接続することを特徴とする請求項６に記載の太陽電池モジュール。   The said copper foil and the said lead are electrically connected in the edge part by the side of the said other semiconductor substrate among the said copper foil, The solar cell module of Claim 6 characterized by the above-mentioned. 前記リードの形状は、帯状からなるとともに、前記リードの短手方向の幅が前記銅箔の短手方向の幅よりも狭いことを特徴とする請求項６又は請求項７に記載の太陽電池モジュール。   8. The solar cell module according to claim 6, wherein the lead has a strip shape, and the width of the lead in the short direction is narrower than the width of the copper foil in the short direction. .
JP2007082899A 2007-03-27 2007-03-27 Solar cell module Expired - Lifetime JP4741538B2 (en)

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JPH0260171A (en) * 1988-08-26 1990-02-28 Mitsubishi Electric Corp Solar cell
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5693377A (en) * 1979-11-02 1981-07-28 Licentia Gmbh Solar battery and solar battery group formed of same
US4301322A (en) * 1980-04-03 1981-11-17 Exxon Research & Engineering Co. Solar cell with corrugated bus
JPS5762570A (en) * 1980-10-02 1982-04-15 Toshiba Corp Solar battery
JPS60202968A (en) * 1984-03-28 1985-10-14 Hitachi Ltd Electrode connecting device of solar battery cell
JPS60239067A (en) * 1984-05-11 1985-11-27 Hitachi Ltd Solar cell element
JPS6216579A (en) * 1985-07-15 1987-01-24 Sharp Corp Interconnector for solar cell
JPH0260171A (en) * 1988-08-26 1990-02-28 Mitsubishi Electric Corp Solar cell
JPH0444166A (en) * 1990-06-11 1992-02-13 Ricoh Co Ltd Retrieval management system
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