JP2001044459A - Solar battery - Google Patents
Solar batteryInfo
- Publication number
- JP2001044459A JP2001044459A JP11215926A JP21592699A JP2001044459A JP 2001044459 A JP2001044459 A JP 2001044459A JP 11215926 A JP11215926 A JP 11215926A JP 21592699 A JP21592699 A JP 21592699A JP 2001044459 A JP2001044459 A JP 2001044459A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- copper foil
- bus bar
- surface electrode
- slit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は太陽電池に関し、特
に半導体接合部を有する半導体基板を用いた太陽電池に
関する。The present invention relates to a solar cell, and more particularly to a solar cell using a semiconductor substrate having a semiconductor junction.
【０００２】[0002]
【従来の技術および発明が解決しようとする課題】従来
の太陽電池を図４（ａ）（ｂ）に示す。図４（ａ）
（ｂ）中、１１はシリコン基板、１６は表面電極、１８
は表面銅箔、１７（１７ａ）は裏面電極バスバー、１９
は裏面銅箔である。シリコン基板１１内にはＮ型領域１
２とＰ型領域１３とＰ+ 型領域１４とが設けられてい
る。Ｎ型領域１２の表面には反射防止膜１５が形成さ
れ、その上から表面電極１６（１６ａ）が設けられ、Ｐ
+ 型領域１４の表面には裏面電極１７（１７ａ）が設け
られている。この表面電極１６は表面銅箔接続用のバス
バー部１６ａと集電用のフィンガー部１６ｃとから成
る。また、裏面電極１７もバスバー部１７ａとフィンガ
ー部（不図示）とから成る。2. Description of the Related Art A conventional solar cell is shown in FIGS. 4 (a) and 4 (b). FIG. 4 (a)
In (b), 11 is a silicon substrate, 16 is a surface electrode, 18
Is a front surface copper foil, 17 (17a) is a back surface electrode bus bar, 19
Is a backside copper foil. N-type region 1 in silicon substrate 11
2, a P-type region 13 and a P + -type region 14 are provided. An anti-reflection film 15 is formed on the surface of the N-type region 12, and a surface electrode 16 (16a) is provided thereon.
The back surface electrode 17 (17a) is provided on the surface of the + type region 14. The front surface electrode 16 includes a bus bar portion 16a for connecting a front surface copper foil and a finger portion 16c for collecting current. The back electrode 17 also includes a bus bar portion 17a and a finger portion (not shown).
【０００３】複数の太陽電池を接続する場合、表面側銅
箔１８の一方端が表面電極１６ａ上に配設され、その複
数個所を表面電極１６ａと接合することによって表面電
極１６に接続され、表面側銅箔１８の他方端が裏面側銅
箔１９を介して裏面電極のバスバー部１７ａの端部に半
田付けされて裏面電極１７（１７ａ）に接続されること
によって行われる。When a plurality of solar cells are connected, one end of the surface side copper foil 18 is disposed on the surface electrode 16a, and a plurality of portions are joined to the surface electrode 16a to be connected to the surface electrode 16a. This is performed by soldering the other end of the side copper foil 18 to the end of the bus bar portion 17a of the back electrode via the back copper foil 19 and connecting to the back electrode 17 (17a).
【０００４】この従来の太陽電池では、反射防止膜１５
上に導電ペーストを印刷して焼成し、導電ペーストが反
射防止膜１５を貫通することでシリコン基板１１とコン
タクトをとるように電極を形成する場合、電極１６とシ
リコン基板１１との接着強度を向上させるためには、導
電ペースト中のガラスフリットを増やしたり、焼成温度
を高くしたり、電極１６とシリコン基板１１との界面に
Ｔｉ等のシリサイド層を形成する必要がある。In this conventional solar cell, the antireflection film 15
When an electrode is formed such that a conductive paste is printed thereon and baked, and the conductive paste penetrates the antireflection film 15 to form a contact with the silicon substrate 11, the bonding strength between the electrode 16 and the silicon substrate 11 is improved. To do so, it is necessary to increase the glass frit in the conductive paste, increase the firing temperature, or form a silicide layer of Ti or the like at the interface between the electrode 16 and the silicon substrate 11.
【０００５】ところが、Ｎ型領域１２の拡散層が浅い接
合をもつ太陽電池においては、導電ペースト中のガラス
フリットを増やしたり、焼成温度を高くすると、ガラス
フリットがＮ型領域１２を突き抜ける割合が多くなるた
め、半導体接合部（Ｎ型領域１２とＰ型領域１３の界
面）でのリークが発生し、太陽電池の変換効率が低下す
るという問題がある。However, in a solar cell having a junction where the diffusion layer of the N-type region 12 has a shallow junction, if the glass frit in the conductive paste is increased or the firing temperature is increased, the rate at which the glass frit penetrates the N-type region 12 increases. Therefore, there is a problem that a leak occurs at the semiconductor junction (the interface between the N-type region 12 and the P-type region 13) and the conversion efficiency of the solar cell decreases.
【０００６】また、表面電極１６（１６ａ）とシリコン
基板１１との界面にＴｉ等のシリサイド層を形成する方
法では、反射防止膜１５上にＴｉ等の金属をスパッタリ
ングによって成膜した後、水素雰囲気中で熱処理を行っ
てシリサイド層を形成し、さらに導電ペーストを印刷し
て焼成するため、低コストであることが要求される量産
プロセスには適さないという問題がある。In the method of forming a silicide layer such as Ti at the interface between the surface electrode 16 (16a) and the silicon substrate 11, a metal such as Ti is formed on the antireflection film 15 by sputtering, and then a hydrogen atmosphere is formed. Since a silicide layer is formed by performing heat treatment in the inside, and a conductive paste is printed and baked, there is a problem that it is not suitable for a mass production process that requires low cost.
【０００７】そこで、表面電極のバスバー部１６ａに銅
箔１８を複数箇所で接合して設ける際に、この銅箔１８
との接合部分の表面電極１６（１６ａ）を他の部分より
も厚く形成することによって、電極１６とシリコン基板
１１との接着強度を向上させることも考えられる。Therefore, when the copper foil 18 is bonded to the bus bar portion 16a of the surface electrode at a plurality of locations, the copper foil 18
By forming the surface electrode 16 (16a) at the joint portion between the electrode 16 and the other portion to be thicker, the adhesive strength between the electrode 16 and the silicon substrate 11 may be improved.
【０００８】しかしながら、バスバー部１６ａを部分的
に厚くしようとすると、図５（ａ）に示すように、バス
バー部１６ａとフィンガー部１６ｃとから成る電極パタ
ーンをスクリーン印刷で形成した後に、図５（ｂ）に示
すように、さらに厚い部分のみのパターン１６（ｄ）を
重ねて印刷する必要があり、スクリーン印刷に用いるパ
ターンが２版必要になるという問題がある。これに伴っ
て量産時にはプリンターやペーストの乾燥機も２台必要
になるとともに、図５（ａ）に示すパターン上に、図５
（ｂ）に示すパターンを乗せるという位置合わせも必要
になるという問題が発生する。However, if the bus bar portion 16a is to be partially thickened, an electrode pattern composed of the bus bar portion 16a and the finger portion 16c is formed by screen printing as shown in FIG. As shown in b), it is necessary to print the pattern 16 (d) of only the thicker portion in a superimposed manner, and there is a problem in that two patterns are required to be used for screen printing. Accordingly, during mass production, two printers and a dryer for paste are required, and the pattern shown in FIG.
A problem arises in that it is also necessary to perform positioning for mounting the pattern shown in FIG.
【０００９】本発明はこのような従来技術の問題点に鑑
みてなされたものであり、プロセスを増加させることな
く、特性低下を防止し、且つ電極の接着強度が向上した
太陽電池を提供することを目的とする。The present invention has been made in view of the above-mentioned problems of the prior art, and provides a solar cell in which characteristics are prevented from being reduced without increasing the number of processes and the adhesive strength of electrodes is improved. With the goal.
【００１０】[0010]
【課題を解決するための手段】上記目的を達成するため
に、本発明に係わる太陽電池では、半導体接合部を有す
る半導体基板の一主面側にバスバー部とフィンガー部と
からなる表面電極を形成し、他の主面側に裏面電極を形
成した太陽電池において、前記表面電極のバスバー部に
銅箔を部分的に接合して設けるとともに、このバスバー
部における前記銅箔との接合部にスリットを設けたこと
を特徴とする。In order to achieve the above object, in a solar cell according to the present invention, a surface electrode comprising a bus bar portion and a finger portion is formed on one principal surface side of a semiconductor substrate having a semiconductor junction. And, in the solar cell having a back electrode formed on the other main surface side, a copper foil is partially bonded to a bus bar portion of the front electrode, and a slit is formed in a bonding portion of the bus bar portion with the copper foil. It is characterized by having been provided.
【００１１】[0011]
【発明の実施の形態】以下、本発明の実施形態を添付図
面に基づき詳細に説明する。図１は本発明に係わる太陽
電池の一実施形態を示す断面図、図２は平面図であり、
１は半導体基板、６は表面電極、７は裏面電極、８は表
面銅箔、９は裏面銅箔である。Embodiments of the present invention will be described below in detail with reference to the accompanying drawings. FIG. 1 is a sectional view showing an embodiment of a solar cell according to the present invention, FIG. 2 is a plan view,
1 is a semiconductor substrate, 6 is a front electrode, 7 is a back electrode, 8 is a front copper foil, and 9 is a back copper foil.
【００１２】半導体基板１は、厚み０．３ｍｍ程度の単
結晶シリコンや多結晶シリコンなどからなる。この半導
体基板１はボロン（Ｂ）を１×１０16〜１０18ａｔｏｍ
ｓ・ｃｍ-3程度含有し、比抵抗は１．５Ω・ｃｍ程度で
ある。この半導体基板１内にはＮ型領域２とＰ+ 型領域
４がある。なお、この半導体基板１は単結晶ガリウム砒
素等で形成しても良い。The semiconductor substrate 1 is made of single crystal silicon, polycrystal silicon, or the like having a thickness of about 0.3 mm. This semiconductor substrate 1 contains boron (B) at 1 × 10 16 to 10 18 atoms.
It contains about s · cm −3 and the specific resistance is about 1.5 Ω · cm. The semiconductor substrate 1 has an N type region 2 and a P + type region 4. The semiconductor substrate 1 may be formed of single crystal gallium arsenide or the like.
【００１３】Ｎ型領域２はＰ型のシリコン基板１を拡散
炉中に配置して、オキシ塩化リン（ＰＯＣｌ3 ）中で加
熱することによって、シリコン基板１の全体の表面部に
リン原子を１×１０16〜１０18ａｔｏｍｓ・ｃｍ-3程度
拡散させ、その後に側面部と裏面部の拡散層を除去する
ことにより、厚み０．３〜０．４μｍ程度に形成する。The N-type region 2 is formed by placing a P-type silicon substrate 1 in a diffusion furnace and heating the substrate 1 in phosphorus oxychloride (POCl 3 ), so that the entire surface of the silicon substrate 1 has one phosphorus atom. It is formed to have a thickness of about 0.3 to 0.4 μm by diffusing about × 10 16 to about 10 18 atoms · cm −3 and then removing the diffusion layers on the side surface and the back surface.
【００１４】また、Ｐ+ 層４は半導体基板１の裏面側に
アルミニウム（Ａｌ）ペーストを印刷して焼成すること
により、アルミニウムを５〜１０μｍ程度の厚みに１×
１０20〜１０22ａｔｏｍｓ・ｃｍ-3程度拡散させて形成
する。The P + layer 4 is formed by printing an aluminum (Al) paste on the back surface of the semiconductor substrate 1 and firing the aluminum paste to reduce the thickness of the aluminum to 1 × to about 5 to 10 μm.
It is formed by diffusing about 10 20 to 10 22 atoms · cm −3 .
【００１５】半導体基板１の一主面側に反射防止膜５が
形成されている。この反射防止膜５は例えば窒化シリコ
ン膜などからなり、シランとアンモニアとの混合ガスを
用いたプラズマＣＶＤ法などで厚み５００〜１０００
Å、屈折率１．９０〜２．３０に形成される。この反射
防止膜５は、半導体基板１の表面で光が反射するのを防
止して、半導体基板１内に光を効果的に取り込むために
設ける。この反射防止膜５は形成しない場合もあり、ま
た電極形成部分には形成しない場合もある。An antireflection film 5 is formed on one main surface of the semiconductor substrate 1. The antireflection film 5 is made of, for example, a silicon nitride film and has a thickness of 500 to 1000 by a plasma CVD method using a mixed gas of silane and ammonia.
Å, formed to have a refractive index of 1.90 to 2.30. The antireflection film 5 is provided to prevent light from being reflected on the surface of the semiconductor substrate 1 and to effectively capture light into the semiconductor substrate 1. The antireflection film 5 may not be formed, or may not be formed on the electrode formation portion.
【００１６】この反射防止膜５上には、表面電極６（６
ａ、６ｂ）が形成されている。この表面電極６はバスバ
ー部６ａと、バスバー部６ａと交差して分岐して幅１０
０〜３００μｍ、ピッチ１〜３ｍｍ程度に形成されたフ
ィンガー部６ｃとからなる。バスバー部６ａは基板１の
略全長にわたって２本あるいは３本平行に形成されてお
り、フィンガー部６ｃはバスバー部６ａに交差して多数
本が基板１の略全長にわたって形成される。On the antireflection film 5, a surface electrode 6 (6
a, 6b) are formed. The surface electrode 6 has a width of 10 μm, which crosses the bus bar portion 6 a and crosses the bus bar portion 6 a.
The finger portion 6c is formed with a pitch of about 0 to 300 μm and a pitch of about 1 to 3 mm. Two or three bus bar portions 6a are formed in parallel over substantially the entire length of the substrate 1, and a large number of finger portions 6c cross the bus bar portion 6a and are formed over substantially the entire length of the substrate 1.
【００１７】バスバー部６ａには、表面銅箔８との接続
部分で他のバスバー部６ａよりも厚く形成され、５〜４
０μｍ程度の厚みに形成されたスリット部６ｂが設けら
れている。この表面電極６（６ａ）の形成には、図２に
示すように、バスバー部６ａは、その一部にスリット６
ｂが形成されるようなスクリーンを用いて電極ペースト
を印刷することにより、１回の印刷でバスバー部６ａの
一部が厚膜化された電極を形成する。すなわち、スクリ
ーン印刷法で形成するバスバー部６ａは、スクリーン印
刷の印圧によって断面中央部が凹状になり、印圧を小さ
くするとフィンガー部６ｃの膜厚が薄くなる。そこで、
スリット部６ｂが形成されるように印刷パターンを形成
すると、スクリーンのスリット部６ｂ部分が乳剤で支え
られ、スクリーンと基板１間に所定の空隙が形成され、
バスバー部６ａのスリット部６ｂ部分を厚く形成するこ
とができる。The bus bar 6a is formed thicker than the other bus bar 6a at the connection portion with the surface copper foil 8, and
A slit portion 6b having a thickness of about 0 μm is provided. To form the surface electrode 6 (6a), as shown in FIG.
By printing the electrode paste using a screen where b is formed, an electrode in which a part of the bus bar portion 6a is thickened by one printing is formed. That is, the bus bar portion 6a formed by the screen printing method has a concave central portion in cross section due to the printing pressure of the screen printing, and the thickness of the finger portion 6c becomes thinner when the printing pressure is reduced. Therefore,
When the printing pattern is formed so that the slits 6b are formed, the slits 6b of the screen are supported by the emulsion, and a predetermined gap is formed between the screen and the substrate 1,
The slit portion 6b of the bus bar portion 6a can be formed thick.
【００１８】このような表面電極６は、たとえば銀粉
末、ガラスフリット、結合剤、及び溶剤から成るペース
トをスクリーン印刷して６００〜８００℃程度の温度で
焼き付け、全体を半田層（不図示）で被覆することによ
り形成される。Such a surface electrode 6 is screen-printed with a paste made of, for example, silver powder, glass frit, a binder, and a solvent and baked at a temperature of about 600 to 800 ° C., and is entirely formed of a solder layer (not shown). It is formed by coating.
【００１９】この表面電極６（６ａ）上には５０〜２５
０μｍ程度の厚みの表面銅箔８が貼り付けられている。
この表面銅箔８は、表面電極６（６ａ）の断面積を大き
くして表面電極６の電気抵抗を下げるとともに、太陽電
池の出力を取り出すために設けられる。このような表面
銅箔８をバスバー部６ａ上の他のバスバー部よりも厚く
形成されたスリット部６ｂと熱溶着等により接続する。
つまり、電極表面に被覆した半田と、銅箔のまわりに被
着した半田を熱熔着させる。この時スクリーン印刷時に
形成されていたスリット６ｂは、銅箔を溶着等により接
続する際に接続される。つまり、ハンダで埋まる。On the surface electrode 6 (6a), 50 to 25
A surface copper foil 8 having a thickness of about 0 μm is attached.
The surface copper foil 8 is provided to increase the cross-sectional area of the surface electrode 6 (6a) to reduce the electric resistance of the surface electrode 6, and to take out the output of the solar cell. Such a surface copper foil 8 is connected to a slit portion 6b formed on the bus bar portion 6a thicker than other bus bar portions by heat welding or the like.
That is, the solder coated on the electrode surface and the solder applied around the copper foil are thermally welded. At this time, the slit 6b formed at the time of screen printing is connected when the copper foil is connected by welding or the like. In other words, it is filled with solder.
【００２０】この場合、表面銅箔８は表面電極６の厚膜
部６ｂに接着されることから、厚くした部分での電極６
とシリコン基板１１の接着強度が強くなり、銅箔８が剥
がれにくくなる。In this case, since the surface copper foil 8 is bonded to the thick film portion 6b of the surface electrode 6, the electrode 6
And the silicon substrate 11 have an increased adhesive strength, and the copper foil 8 is less likely to peel off.
【００２１】基板１の裏面側には裏面電極７が設けられ
ている。この裏面電極７も裏面銅箔９を接続するための
幅１〜２ｍｍ、厚み５〜１０μｍ程度のバスバー部７ａ
とこのバスバー部７ａと交差して分岐して多数本形成さ
れる幅１００〜３００μｍ程度、厚み５〜１０μｍ程
度、ピッチ１．５〜５ｍｍ程度のフィンガー部（不図
示）とから成る。バスバー部７ａは基板１の略全長にわ
たって形成される。このような裏面電極６は、たとえば
銀粉末、ガラスフリット、結合剤および溶剤からなるペ
ーストをスクリーン印刷して焼き付け、全体を半田層
（不図示）で被覆することにより形成される。On the back surface of the substrate 1, a back electrode 7 is provided. This back electrode 7 is also a bus bar portion 7a having a width of about 1 to 2 mm and a thickness of about 5 to 10 μm for connecting the back copper foil 9.
And a plurality of finger portions (not shown) having a width of about 100 to 300 μm, a thickness of about 5 to 10 μm, and a pitch of about 1.5 to 5 mm, which are formed by intersecting and branching with the bus bar portion 7a. The bus bar portion 7a is formed over substantially the entire length of the substrate 1. Such a back electrode 6 is formed, for example, by screen-printing and baking a paste made of silver powder, glass frit, a binder and a solvent, and covering the whole with a solder layer (not shown).
【００２２】この裏面電極７（７ａ）上には裏面銅箔９
が貼り付けられている。この裏面銅箔９は、裏面電極７
（７ａ）の断面積を大きくして裏面電極７の電気抵抗を
下げるとともに、太陽電池の出力を取り出すために設け
られる。このような裏面銅箔９は、裏面バスバー部７ａ
上に複数箇所を熱溶着等により接続する。このとき、裏
面も表面と同様のパターンを用いることにより、強度の
向上を図ることができる。On the back electrode 7 (7a), a back copper foil 9
Is pasted. This backside copper foil 9 is
It is provided to increase the cross-sectional area of (7a) to lower the electric resistance of the back electrode 7 and to take out the output of the solar cell. Such a back copper foil 9 is provided on the back bus bar portion 7a.
A plurality of locations are connected by heat welding or the like. At this time, the strength can be improved by using the same pattern on the back surface as on the front surface.
【００２３】図３（ａ）および（ｂ）は表面電極パター
ンの他の実施形態を示す図である。図３（ａ）はバスバ
ー部６ａの一部を厚膜化するためにフィンガー６ｃと平
行な方向の一部にスリット６ｂを形成したものである。
図３（ｂ）は銅箔との接合部を含むバスバー部６ａ全体
を厚膜化するために、バスバー６ａをフィンガー６ｃと
垂直な方向にスリット６ｂを形成したものである。この
ようなパターンでも上述した方法と同様に、バスバー部
６ａの一部もしくは全体を厚膜化することができる。す
なわち、スリット部６ｂが形成されるように印刷パター
ンを形成すると、スクリーンのスリット部６ｂ部分が乳
剤で支えられ、スクリーンと基板１間に所定の空隙が形
成され、バスバー部６ａのスリット部６ｂ部分を厚く形
成することができる。FIGS. 3A and 3B are diagrams showing another embodiment of the surface electrode pattern. FIG. 3A shows a configuration in which a slit 6b is formed in a part in a direction parallel to the finger 6c in order to thicken a part of the bus bar part 6a.
FIG. 3B shows a bus bar 6a in which a slit 6b is formed in a direction perpendicular to the finger 6c in order to increase the thickness of the entire bus bar 6a including the joint with the copper foil. Even in such a pattern, similarly to the above-described method, a part or the whole of the bus bar portion 6a can be made thicker. That is, when the printing pattern is formed such that the slits 6b are formed, the slits 6b of the screen are supported by the emulsion, a predetermined gap is formed between the screen and the substrate 1, and the slits 6b of the bus bar 6a are formed. Can be formed thick.
【００２４】[0024]
【実施例】図２に示すような電極パターンを反射防止膜
上にスクリーン印刷して焼成した。表１に図５（ａ）に
示す従来の電極パターン（２ｍｍ幅）と本発明の電極パ
ターン（電極が２ｍｍ幅でスリットが１８０μｍ幅）で
印刷して焼成した後の電極の厚みの測定結果を示す。双
方とも表面電極パターンのスクリーン印刷は１回であ
る。EXAMPLE An electrode pattern as shown in FIG. 2 was screen-printed on an antireflection film and fired. Table 1 shows the measurement results of the electrode thickness after printing and firing with the conventional electrode pattern (2 mm width) shown in FIG. 5A and the electrode pattern of the present invention (electrode width 2 mm and slit 180 μm width). Show. In both cases, the screen printing of the surface electrode pattern is performed once.
【００２５】[0025]
【表１】 [Table 1]
【００２６】表１に示すとおり、本発明の電極パターン
によれば、１回のスクリーン印刷によって部分的にバス
バー部の厚みを厚くできる。As shown in Table 1, according to the electrode pattern of the present invention, the thickness of the bus bar portion can be partially increased by one screen printing.
【００２７】また、表２に従来の電極パターンと本発明
の電極パターンの電極強度の測定結果を示す。電極強度
は２ｍｍ幅のリボン状金属端子を表面電極（従来パター
ンは図４ａの１６ａ、本発明パターンは図１の６ｂ）に
半田付けして、太陽電池の表面と直交する垂直方向にそ
って２０ｍｍ／ｍｉｎの速度で引っ張った際に、破壊が
生じた外力を測定したものである。Table 2 shows the measurement results of the electrode strength of the conventional electrode pattern and the electrode pattern of the present invention. The electrode strength was such that a 2 mm wide ribbon-shaped metal terminal was soldered to the surface electrode (16a in FIG. 4a for the conventional pattern, 6b in FIG. 1 for the pattern of the present invention) and 20 mm along the vertical direction perpendicular to the surface of the solar cell. The external force at which destruction occurred when pulled at a speed of / min was measured.
【００２８】[0028]
【表２】 [Table 2]
【００２９】表２に示すとおり、従来の電極パターンの
太陽電池においては電極の引っ張り強度が０．５ｋｇで
あるのに対し、本発明の電極パターンで１回の印刷でバ
スバー部が部分的に厚くなるようにしたものは１．２ｋ
ｇの電極強度が得られた。As shown in Table 2, in the solar cell having the conventional electrode pattern, the tensile strength of the electrode was 0.5 kg, while the electrode pattern of the present invention partially thickened the bus bar portion by one printing. 1.2k
g of electrode strength was obtained.
【００３０】[0030]
【発明の効果】以上詳細に説明したように、本発明に係
る太陽電池によれば、表面電極のパターンにおいて、バ
スバー部の銅箔と接合する複数個所にスリットを入れる
ことから、一回のスクリーン印刷によりバスバー電極を
部分的に厚くすることができ、厚くした部分での電極と
シリコン基板との接着強度が強くなり、表面電極に接着
される銅箔が剥がれにくくなる。つまり本発明によれ
ば、工程を増やすことなく、電極とシリコン基板との接
着強度を強めることができ、工程数を増やすことなく、
後工程の配線歩留まりが向上する。As described above in detail, according to the solar cell according to the present invention, in the surface electrode pattern, slits are formed at a plurality of locations where the bus bar portion is joined to the copper foil, so that a single screen is formed. The bus bar electrode can be partially thickened by printing, the adhesive strength between the electrode and the silicon substrate in the thickened portion is increased, and the copper foil adhered to the surface electrode is less likely to peel off. In other words, according to the present invention, the bonding strength between the electrode and the silicon substrate can be increased without increasing the number of steps, and without increasing the number of steps.
The wiring yield in the post-process is improved.
【図１】本発明に係る太陽電池の一実施形態を示す断面
図である。FIG. 1 is a cross-sectional view showing one embodiment of a solar cell according to the present invention.
【図２】本発明に係る太陽電池の一実施形態を示す平面
図である。FIG. 2 is a plan view showing one embodiment of a solar cell according to the present invention.
【図３】本発明に係る太陽電池の他の実施形態を示す平
面図である。FIG. 3 is a plan view showing another embodiment of the solar cell according to the present invention.
【図４】従来の太陽電池を示す図であり（ａ）は断面
図、（ｂ）は平面図である。4A and 4B are diagrams showing a conventional solar cell, wherein FIG. 4A is a sectional view and FIG. 4B is a plan view.
【図５】従来の太陽電池の表電極パターンを示す図であ
り（ａ）は従来電極パターン、（ｂ）はバスバー厚膜部
のパターンである。5A and 5B are diagrams showing a front electrode pattern of a conventional solar cell, wherein FIG. 5A shows a conventional electrode pattern, and FIG. 5B shows a bus bar thick film portion pattern.
１‥‥‥半導体基板、６‥‥‥表面電極、６ａ‥‥‥バ
スバー部、６ｃ‥‥‥フィンガー部、７‥‥‥裏面電極1 semiconductor substrate, 6 front electrode, 6a busbar portion, 6c finger portion, 7 rear electrode
Claims (1)
面側にバスバー部とフィンガー部とからなる表面電極を
形成し、他の主面側に裏面電極を形成した太陽電池にお
いて、前記表面電極のバスバー部に銅箔を部分的に接合
して設けるとともに、このバスバー部における前記銅箔
との接合部にスリットを設けたことを特徴とする太陽電
池。1. A solar cell having a front surface electrode comprising a bus bar portion and a finger portion formed on one main surface side of a semiconductor substrate having a semiconductor bonding portion and a back surface electrode formed on another main surface side. A solar cell characterized in that a copper foil is partially joined to the bus bar portion of (1) and a slit is provided at a joint portion of the bus bar portion with the copper foil.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11215926A JP2001044459A (en) | 1999-07-29 | 1999-07-29 | Solar battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11215926A JP2001044459A (en) | 1999-07-29 | 1999-07-29 | Solar battery |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007044510A Division JP4284368B2 (en) | 2007-02-23 | 2007-02-23 | Manufacturing method of solar cell |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2001044459A true JP2001044459A (en) | 2001-02-16 |
| JP2001044459A5 JP2001044459A5 (en) | 2007-04-12 |
Family
ID=16680561
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11215926A Pending JP2001044459A (en) | 1999-07-29 | 1999-07-29 | Solar battery |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2001044459A (en) |
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