JP2007150331A - 発光デバイスのための発光セラミック素子 - Google Patents
発光デバイスのための発光セラミック素子 Download PDFInfo
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- JP2007150331A JP2007150331A JP2006350576A JP2006350576A JP2007150331A JP 2007150331 A JP2007150331 A JP 2007150331A JP 2006350576 A JP2006350576 A JP 2006350576A JP 2006350576 A JP2006350576 A JP 2006350576A JP 2007150331 A JP2007150331 A JP 2007150331A
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- light emitting
- semiconductor structure
- ceramic
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Abstract
【解決手段】n型領域とp型領域との間に堆積された発光層を含む半導体構造体が、機械的支持をデバイスに与えるホストと発光材料を含むセラミック層とを含む複合基板に取り付けられる。いくつかの実施形態においては、複合基板は、半導体構造体が上に成長する結晶シード層を含む。セラミック層は、シード層とホストとの間に堆積される。いくつかの実施形態においては、複合基板は、従来の成長基板上に構造体を成長させた後に、半導体構造体に取り付けられる。いくつかの実施形態においては、複合基板は、半導体構造体から間隔を置いて配置され、機械的支持を構造体に与えない。いくつかの実施形態においては、セラミック層は、500μmより薄い厚さを有する。
【選択図】図8
Description
12:p型領域
14:発光領域、活性領域
18:n−コンタクト
20:p−コンタクト
52:発光セラミック
56:接合部
58:核生成構造体
35:複合成長基板
37:接合された構造体
82、84:電気的コンタクト
94:構造体
100:スラグ
102:リフレクタ・カップ
103:マウント
104:発光ダイオード・ダイ
105:充填プラスチック材料
106:金属フレーム
108:カバー
Claims (27)
- ホストと、該ホストに接続され、発光材料を含み、厚さが500μmより薄いセラミック層とを含む複合基板と、
前記複合基板に取り付けられ、n型領域とp型領域の間に堆積された発光層を含む半導体構造体と、
を含むことを特徴とする構造体。 - 前記セラミック層の厚さは250μmより薄いことを特徴とする、請求項1に記載の構造体。
- 前記セラミック層の厚さは50μmより薄いことを特徴とする、請求項1に記載の構造体。
- 前記ホストは、単結晶Al2O3、多結晶Al2O3、AlN、Si、SiC、AlON、SiAlON、MgAl2O4、単結晶Y3Al5O12、セラミックY3Al5O12、金属、及びMoのうちの1つであることを特徴とする、請求項1に記載の構造体。
- 前記発光材料は、(Lu1-x-y-a-bYxGdy)3(Al1-z-cGazSic)5O12-cNc:CeaPrb(ここで、0<x<1、0<y<1、0<z≦0.1、0<a≦0.2、0<b≦0.1、及び0<c<1)、Lu3Al5O12:Ce3+、Y3Al5O12:Ce3+、Y3Al4.8Si0.2O11.8N0.2:Ce3+、(Sr1-x-yBaxCay)2-zSi5-aAlaN8-aOa:Euz 2+(ここで、0≦a<5、0<x≦1、0≦y≦1、及び0<z≦1)、Sr2Si5N8:Eu2+、(Sr1-a-bCabBac)SixNyOz:Eua 2+(ここで、a=0.002〜0.2、b=0.0〜0.25、c=0.0〜0.25、x=1.5〜2.5、y=1.5〜2.5、z=1.5〜2.5)、SrSi2N2O2:Eu2+、(Sr1-u-v-xMguCavBax)(Ga2-y-zAlyInzS4):Eu2+、SrGa2S4:Eu2+、(Sr1-x-yBaxCay)2SiO4:Eu2+、SrBaSiO4:Eu2+、(Ca1-xSrx)S:Eu2+(ここで、0≦x≦1)、CaS:Eu2+、SrS:Eu2+、(Ca1-x-y-zSrxBayMg2)1-n(Al1-a+bBa)Si1-bN3-bOb:REn(ここで、0≦x≦1、0≦y≦1、0≦z≦1、0≦a≦1、0<b≦1、及び0.002≦n≦0.2、並びに、RE=Eu2+又はCe3+)、CaAlSiN3:Eu2+、CaAl1.04Si0.96N3:Ce3+、Mx v+Si12-(m+n)Alm+nOnN16-n(ここで、x=m/v、及び、M=Li、Mg、Ca、Y、Sc、Ce、Pr、Nf、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、Lu、又はこれらの混合物)、及び、Ca0.75Si8.625Al3.375O1.375N0.625:E0.25のうちの1つであることを特徴とする、請求項1に記載の構造体。
- 前記発光層は、順方向バイアスをかけたときに第1のピーク波長の光を放出するように構成され、前記発光材料は、前記第1のピーク波長の光を吸収して第2のピーク波長の光を放出できることを特徴とする、請求項1に記載の構造体。
- 前記半導体構造体は、前記複合基板の上に成長することを特徴とする、請求項1に記載の構造体。
- 前記複合基板はシード層をさらに含み、前記セラミック層は前記ホストと前記シード層との間に堆積され、前記半導体構造体は前記シード層の上に直接成長することを特徴とする、請求項1に記載の構造体。
- 前記シード層は、GaN、4HSiC、6HSiC、ScMgAlO4、ZnO、Al2O3、AlGaN、及びInGaNのうちの1つであることを特徴とする、請求項8に記載の構造体。
- 前記シード層と前記セラミック層との間に堆積された接合層をさらに含み、前記接合層は、前記シード層を前記セラミック層に取り付けるものであることを特徴とする、請求項8に記載の構造体。
- 前記半導体構造体は、成長基板の上に成長し、前記セラミック層と前記半導体構造体との間の界面の接合部によって前記複合基板に接合されたことを特徴とする、請求項1に記載の構造体。
- 前記セラミック層と前記半導体構造体との間に堆積された接合層をさらに含むことを特徴とする、請求項11に記載の構造体。
- 前記成長基板は、SiC及びAl2O3のうちの1つであることを特徴とする、請求項11に記載の構造体。
- p型領域に電気的に接続された第1のコンタクトと、
n型領域に電気的に接続された第2のコンタクトと、
をさらに含み、前記第1のコンタクト及び前記第2のコンタクトは、いずれも前記半導体構造体の同じ側に形成されたことを特徴とする、請求項1に記載の構造体。 - 前記発光層を覆うカバーをさらに含むことを特徴とする、請求項1に記載の構造体。
- ホストと、該ホストに接続され、発光材料を含み、厚さが500μmより薄いセラミック層とを含む複合基板を準備するステップと、
n型領域とp型領域の間に堆積された発光層を含む半導体構造体を、前記複合基板に取り付けるステップと、
を含むことを特徴とする方法。 - 前記発光層は、順方向バイアスをかけたときに第1のピーク波長の光を放出するように構成され、前記発光材料は、前記第1のピーク波長の光を吸収して第2のピーク波長の光を放出できることを特徴とする、請求項16に記載の方法。
- 前記取り付けるステップは、前記半導体構造体を前記複合基板の上に成長させることを含むことを特徴とする、請求項16に記載の方法。
- 前記複合基板はシード層をさらに含み、前記セラミック層は前記ホストと前記シード層との間に堆積され、前記成長させることは、前記半導体構造体を前記シード層の上に直接成長させることを含むことを特徴とする、請求項18に記載の方法。
- 前記半導体構造体を成長基板の上に成長させるステップをさらに含み、前記取り付けるステップは、前記半導体構造体を前記セラミック層に接合することを含むことを特徴とする、請求項16に記載の方法。
- 前記半導体構造体と前記セラミック層との間に堆積される接合層を準備するステップをさらに含むことを特徴とする、請求項20に記載の方法。
- 接合した後に前記成長基板を除去するステップをさらに含むことを特徴とする、請求項20に記載の方法。
- p型領域に電気的に接続される第1のコンタクトを形成するステップと、
n型領域に電気的に接続される第2のコンタクトを形成するステップと、
をさらに含み、前記第1のコンタクト及び前記第2のコンタクトは、いずれも前記半導体構造体の同じ側に形成されることを特徴とする、請求項16に記載の方法。 - ホストと、該ホストに接続され、発光材料を含み、厚さが500μmより薄いセラミック層とを含む複合基板とを含む複合基板を含む構造体。
- n型領域とp型領域の間に堆積され、順方向バイアスをかけたときに第1のピーク波長の光を放出するように構成された発光層を含む半導体構造体をさらに含み、前記複合基板は、前記発光層によって放出される光の経路に堆積され、前記発光材料は、前記第1のピーク波長の光を吸収して第2のピーク波長の光を放出できることを特徴とする、請求項24に記載の構造体。
- 前記複合基板は、前記半導体構造体と直接接触していることを特徴とする、請求項25に記載の構造体。
- 前記複合基板は、前記半導体構造体から間隔を置いて配置されていることを特徴とする、請求項25に記載の構造体。
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US20070126017A1 (en) | 2007-06-07 |
CN101366126B (zh) | 2013-03-06 |
TW200805706A (en) | 2008-01-16 |
EP1958269A1 (en) | 2008-08-20 |
TWI418051B (zh) | 2013-12-01 |
US20090155943A1 (en) | 2009-06-18 |
EP1958269B1 (en) | 2019-01-09 |
US7514721B2 (en) | 2009-04-07 |
CN101366126A (zh) | 2009-02-11 |
US8278674B2 (en) | 2012-10-02 |
WO2007063460A1 (en) | 2007-06-07 |
JP5032839B2 (ja) | 2012-09-26 |
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