JP2007150076A - 窒化物半導体発光素子 - Google Patents
窒化物半導体発光素子 Download PDFInfo
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- JP2007150076A JP2007150076A JP2005344170A JP2005344170A JP2007150076A JP 2007150076 A JP2007150076 A JP 2007150076A JP 2005344170 A JP2005344170 A JP 2005344170A JP 2005344170 A JP2005344170 A JP 2005344170A JP 2007150076 A JP2007150076 A JP 2007150076A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 82
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 62
- 239000000758 substrate Substances 0.000 claims abstract description 54
- 230000004888 barrier function Effects 0.000 claims description 11
- 230000015572 biosynthetic process Effects 0.000 abstract description 27
- 230000006798 recombination Effects 0.000 abstract description 5
- 239000010410 layer Substances 0.000 description 263
- 229910002601 GaN Inorganic materials 0.000 description 17
- 150000001875 compounds Chemical class 0.000 description 9
- 239000007789 gas Substances 0.000 description 9
- 239000013078 crystal Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 229910052594 sapphire Inorganic materials 0.000 description 7
- 239000010980 sapphire Substances 0.000 description 7
- 238000005530 etching Methods 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 6
- 229910002704 AlGaN Inorganic materials 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 239000000969 carrier Substances 0.000 description 4
- 229910021478 group 5 element Inorganic materials 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- AXAZMDOAUQTMOW-UHFFFAOYSA-N dimethylzinc Chemical compound C[Zn]C AXAZMDOAUQTMOW-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- -1 laminated gallium nitride compound Chemical class 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- MHYQBXJRURFKIN-UHFFFAOYSA-N C1(C=CC=C1)[Mg] Chemical compound C1(C=CC=C1)[Mg] MHYQBXJRURFKIN-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910004349 Ti-Al Inorganic materials 0.000 description 1
- 229910004692 Ti—Al Inorganic materials 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 239000003362 semiconductor superlattice Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/17—Semiconductor lasers comprising special layers
- H01S2301/173—The laser chip comprising special buffer layers, e.g. dislocation prevention or reduction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/021—Silicon based substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
- H01S5/3216—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities quantum well or superlattice cladding layers
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- Computer Hardware Design (AREA)
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- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
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- Life Sciences & Earth Sciences (AREA)
- General Physics & Mathematics (AREA)
- Led Devices (AREA)
- Semiconductor Lasers (AREA)
Abstract
【解決手段】 基板1上に、少なくとも発光部が形成される活性層5を含む窒化物半導体積層部とを有し、活性層5の基板1側に、窒化物半導体の超格子層により形成され、基板1側の窒化物半導体層で発生する貫通転位の端部にピットを発生させるピット形成層4が設けられている。
【選択図】 図1
Description
2 バッファ層
3 n形層
4 ピット形成層
5 活性層
6 埋込み層
7 p形層
8 発光層形成部
9 透明性導電層
11 p側電極
12 n側電極
Claims (5)
- 基板と、該基板上に設けられ、少なくとも発光部が形成される活性層を含む窒化物半導体積層部とを有し、前記活性層の前記基板側に、窒化物半導体の超格子構造に形成され、前記基板側の窒化物半導体層で発生する貫通転位の端部にピットを発生させるピット形成層が設けられてなる窒化物半導体発光素子。
- 前記ピット形成層で形成されたピットと連続して前記活性層に形成される凹部内が、該活性層よりバンドギャップエネルギーの大きい窒化物半導体により埋め込まれてなる請求項1記載の半導体発光素子。
- 前記活性層がInxGa1-xN(0<x≦1)とAlyInzGa1-y-zN(0≦y<1、0≦z<1、0≦y+z<1、z<x)との多重量子井戸構造であり、前記ピット形成層が、InaGa1-aN(0<a≦1)とAlbIncGa1-b-cN(0≦b<1、0≦c<1、0≦b+c<1、c<a<x)との10〜50ペアの超格子構造である請求項1または2記載の窒化物半導体発光素子。
- 前記活性層の前記基板と反対側に、アンドープのAlrGa1-rN(0≦r<1)により形成された埋込み層が設けられ、該埋込み層の一部が前記活性層の凹部内に埋め込まれてなる請求項2または3記載の窒化物半導体発光素子。
- 前記ピット形成層の前記基板側および前記埋込み層の前記活性層と反対側にAlsGa1-sN(0≦s<1)により形成されたn形およびp形のいずれかの障壁層が設けられてなる請求項4記載の窒化物半導体発光素子。
Priority Applications (2)
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JP2005344170A JP4895587B2 (ja) | 2005-11-29 | 2005-11-29 | 窒化物半導体発光素子 |
US11/563,799 US20070122994A1 (en) | 2005-11-29 | 2006-11-28 | Nitride semiconductor light emitting element |
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JP2005344170A JP4895587B2 (ja) | 2005-11-29 | 2005-11-29 | 窒化物半導体発光素子 |
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JP2007150076A true JP2007150076A (ja) | 2007-06-14 |
JP4895587B2 JP4895587B2 (ja) | 2012-03-14 |
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JP (1) | JP4895587B2 (ja) |
Cited By (22)
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WO2008153130A1 (ja) * | 2007-06-15 | 2008-12-18 | Rohm Co., Ltd. | 窒化物半導体発光素子及び窒化物半導体の製造方法 |
WO2008153065A1 (ja) * | 2007-06-15 | 2008-12-18 | Rohm Co., Ltd. | 半導体発光素子及びその製造方法 |
JP2011023636A (ja) * | 2009-07-17 | 2011-02-03 | Sharp Corp | 窒化物系半導体発光素子とその製造方法 |
WO2011013754A1 (ja) * | 2009-07-31 | 2011-02-03 | 電気化学工業株式会社 | Led搭載用ウエハとその製造方法、及びそのウエハを用いたled搭載構造体 |
JP2011505073A (ja) * | 2007-11-30 | 2011-02-17 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | オプトエレクトロニクス半導体ボディおよびオプトエレクトロニクス半導体ボディの製造方法 |
JP2011060900A (ja) * | 2009-09-08 | 2011-03-24 | Showa Denko Kk | 半導体発光素子の製造方法およびランプ、電子機器、機械装置 |
JP2013041930A (ja) * | 2011-08-12 | 2013-02-28 | Sharp Corp | 窒化物半導体発光素子およびその製造方法 |
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JP2013516750A (ja) * | 2009-12-30 | 2013-05-13 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | オプトエレクトロニクス半導体チップおよびその製造方法 |
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EP2273571A3 (en) * | 1998-03-12 | 2012-06-27 | Nichia Corporation | A nitride semiconductor device |
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2005
- 2005-11-29 JP JP2005344170A patent/JP4895587B2/ja active Active
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2006
- 2006-11-28 US US11/563,799 patent/US20070122994A1/en not_active Abandoned
Patent Citations (5)
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JP2000232238A (ja) * | 1999-02-09 | 2000-08-22 | Pioneer Electronic Corp | 窒化物半導体発光素子及びその製造方法 |
JP2002270514A (ja) * | 2001-03-06 | 2002-09-20 | Shiro Sakai | 窒化ガリウム系半導体層の形成方法 |
JP2002368269A (ja) * | 2001-06-12 | 2002-12-20 | Pioneer Electronic Corp | 窒化物半導体素子及びその製造方法 |
JP2005268581A (ja) * | 2004-03-19 | 2005-09-29 | Matsushita Electric Ind Co Ltd | 窒化ガリウム系化合物半導体発光素子 |
JP2008539585A (ja) * | 2005-04-29 | 2008-11-13 | クリー インコーポレイテッド | 開いたピット中に延びる能動層を有する発光デバイス及びその製造方法 |
Cited By (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008153065A1 (ja) * | 2007-06-15 | 2008-12-18 | Rohm Co., Ltd. | 半導体発光素子及びその製造方法 |
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