JP2007141583A - Discharge plasma processing device and discharge plasma processing method - Google Patents

Discharge plasma processing device and discharge plasma processing method Download PDF

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JP2007141583A
JP2007141583A JP2005332124A JP2005332124A JP2007141583A JP 2007141583 A JP2007141583 A JP 2007141583A JP 2005332124 A JP2005332124 A JP 2005332124A JP 2005332124 A JP2005332124 A JP 2005332124A JP 2007141583 A JP2007141583 A JP 2007141583A
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electrode
plasma
gas
frequency voltage
discharge
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Atsushi Osada
厚 長田
Yasuhiro Tsuno
康宏 津野
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UINZU KK
Winz Corp
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Winz Corp
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<P>PROBLEM TO BE SOLVED: To provide a discharge plasma processing device having a simple structure, and capable of restraining a manufacturing cost, of preventing degradation of a product life of the device, of improving processing accuracy to a processing object, and of preventing plasma damage from occurring in the processing object; and to provide a discharge plasma processing method. <P>SOLUTION: A gas turned into plasma is supplied between a first electrode 12 and a second electrode 16 separated from a third electrode 18 by a predetermined distance or more, and plasma P1 is generated between the first electrode 12 and the second electrode 16 by applying a high-frequency voltage to the first electrode 12. The first electrode 12 is moved to the third electrode 18 side along with the second electrode 16 to reduce the separation distance between the first electrode 12 and the third electrode 18. The first electrode 12 is moved to the third electrode 18 side along with the second electrode 16, and a gas turned into plasma is supplied between the first electrode 12 and the third electrode 18 to generate plasma between the first electrode 12 and the third electrode 18. The processing object 26 is processed by the generated plasma. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は、放電プラズマ処理装置及び放電プラズマ処理方法に係り、特に放電開始時の高電界を生じないプラズマを発生させることができる放電プラズマ処理装置及び放電プラズマ処理方法に関する。   The present invention relates to a discharge plasma processing apparatus and a discharge plasma processing method, and more particularly to a discharge plasma processing apparatus and a discharge plasma processing method capable of generating plasma that does not generate a high electric field at the start of discharge.

従来から様々な電極構造による放電プラズマ処理が実用化されているが、通常どの電極構造においても、放電開始時に極めて大きな電位差が生じており、被処理体に対してプラズマダメージを引き起こすひとつの要因となっている。具体的には、放電が開始するまでは、放電空間は絶縁体とみなせ、電流が流れない状態であるため、気体粒子が電離するまでは高電界を印加することになる。また、電離が持続して、安定な放電プラズマを発生させるためにも、高電界は必要である。しかし、高電界は一様ではなく、電極表面の形状や電離粒子が原因となって、局所的にさらに高電界になることがあるため、極めて不均一である。この高電界そのものと高電界の不均一さが、被処理体に対してプラズマダメージを生じさせる。   Conventionally, discharge plasma treatments with various electrode structures have been put into practical use. However, in any electrode structure, a very large potential difference has occurred at the start of discharge, which is one factor that causes plasma damage to the object to be treated. It has become. Specifically, until the discharge starts, the discharge space can be regarded as an insulator and no current flows, so that a high electric field is applied until gas particles are ionized. In addition, a high electric field is necessary to generate stable discharge plasma by maintaining ionization. However, the high electric field is not uniform and is extremely non-uniform because the shape of the electrode surface and ionized particles may cause a higher electric field locally. The high electric field itself and the non-uniformity of the high electric field cause plasma damage to the object to be processed.

例えば、最も一般的な平行平板型の放電プラズマ処理装置を例にとると、放電開始電圧は放電維持電圧と比較して数倍から数十倍大きく（数ｋＶ〜１０数ｋＶ）、この大きな電位差によって被処理体であるデバイスがプラズマダメージを受けることが知られている。   For example, taking the most common parallel plate type discharge plasma processing apparatus as an example, the discharge start voltage is several to several tens of times larger than the discharge sustain voltage (several kV to several tens kV), and this large potential difference. It is known that a device which is an object to be processed is subjected to plasma damage.

このため、従来の放電プラズマ処理装置では、放電が開始し易いように、トリガーとなる金属を電極間に挿入したり、電極が高温になるように加熱したり、紫外線やレーザ光の照射によって光電子を供給したり、放電開始電圧が低いガスで放電を開始し、その後ガスを置換していくなど、様々な方法がとられている。
特開平１１−１９５６８９号公報 For this reason, in a conventional discharge plasma processing apparatus, a metal as a trigger is inserted between the electrodes, the electrodes are heated to a high temperature, or the photoelectrons are irradiated by ultraviolet rays or laser light so that the discharge is easily started. Various methods are used, such as supplying gas or starting discharge with a gas having a low discharge start voltage and then replacing the gas.
JP-A-11-195589

ところが、上記方法では、金属汚染が生じたり、電極の消耗が激しかったり、プロセス温度に影響を与えたり、また装置自体が複雑化し製造コストが上昇するなどの別の問題が生じていた。   However, in the above method, other problems such as metal contamination, severe electrode consumption, influence on the process temperature, and complexity of the apparatus itself and an increase in manufacturing cost have occurred.

そこで、本発明は、上記事情を考慮し、簡易な構造で製造コストを抑制でき、かつ装置の製品寿命が低下することを防止するとともに、被処理体に対する処理精度を向上させ被処理体にプラズマダメージを生じさせない放電プラズマ処理装置及び放電プラズマ処理方法を提供することを目的とする。   Therefore, in consideration of the above circumstances, the present invention can suppress the manufacturing cost with a simple structure, prevent the product life of the apparatus from being lowered, improve the processing accuracy for the object to be processed, and plasma on the object to be processed. It is an object of the present invention to provide a discharge plasma processing apparatus and a discharge plasma processing method that do not cause damage.

請求項１に記載の発明は、高周波電圧が印加される第１の電極と、前記第１の電極に対して対向するように配置され、アース接続された第２の電極と、前記第１の電極と対向するように前記第２の電極の反対側に配置され、アース接続された第３の電極と、前記第１の電極に高周波電圧を印加する高周波電源と、前記第１の電極と前記第２の電極との間及び前記第１の電極と前記第３の電極との間にプラズマ化するガスを供給するガス供給手段と、前記第１の電極の前記第３の電極に対する離間距離を変更する方向に前記第１の電極を前記第２の電極とともに移動させる駆動手段と、を含んで構成されたことを特徴とする。   According to the first aspect of the present invention, a first electrode to which a high-frequency voltage is applied, a second electrode that is disposed so as to face the first electrode and is grounded, and the first electrode A third electrode disposed on the opposite side of the second electrode so as to face the electrode and grounded; a high-frequency power source for applying a high-frequency voltage to the first electrode; the first electrode; Gas supply means for supplying a gas to be converted into plasma between the second electrode and between the first electrode and the third electrode; and a separation distance of the first electrode from the third electrode. Driving means for moving the first electrode together with the second electrode in a changing direction.

請求項１に記載の発明によれば、駆動手段により第１の電極と第２の電極が移動されて、第１の電極と第３の電極との離間距離が十分に大きくされ、被処理体が第３の電極上に載置される。そして、ガス供給手段により第１の電極と第２の電極との間にガスが供給される。   According to the first aspect of the present invention, the first electrode and the second electrode are moved by the driving means so that the separation distance between the first electrode and the third electrode is sufficiently increased, and the object to be processed is obtained. Is placed on the third electrode. Then, gas is supplied between the first electrode and the second electrode by the gas supply means.

次に、高周波電源により第１の電極に高周波電圧が印加されると、第２の電極がアース（接地）されているため、第１の電極と第２の電極との間に電位差が生じる。これにより、第１の電極と第２の電極との間にプラズマが発生する。   Next, when a high-frequency voltage is applied to the first electrode by the high-frequency power source, a potential difference is generated between the first electrode and the second electrode because the second electrode is grounded. Thereby, plasma is generated between the first electrode and the second electrode.

このとき、第１の電極と第３の電極との離間距離が大きいため、第１の電極と第３の電極との間にプラズマが発生することはない。このため、第３の電極上に載置された被処理体にプラズマが作用することがない。   At this time, since the separation distance between the first electrode and the third electrode is large, plasma is not generated between the first electrode and the third electrode. For this reason, the plasma does not act on the object to be processed placed on the third electrode.

次に、第１の電極と第２の電極との間に発生したプラズマが安定すると、第１の電極と第３の電極との離間距離が小さくなるように、駆動手段により第１の電極と第２の電極が第３の電極側に移動される。   Next, when the plasma generated between the first electrode and the second electrode is stabilized, the driving means causes the first electrode and the third electrode to be separated from each other so that the separation distance between the first electrode and the third electrode is reduced. The second electrode is moved to the third electrode side.

第１の電極と第２の電極が第３の電極側に移動され、第１の電極と第３の電極との離間距離が小さくなると、第１の電極と第３の電極との間にガスが供給されるとともに、第１の電極と第２の電極との間のプラズマから多量の荷電粒子が第１の電極と第３の電極との間に移動する。第１の電極と第３の電極との間に荷電粒子が移動すると、この荷電粒子が原因となって第１の電極と第３の電極との間にプラズマが発生する。このように、第１の電極と第３の電極との間には、大きな放電開始電圧を印加させることなくプラズマを発生させることができる。   When the first electrode and the second electrode are moved to the third electrode side, and the separation distance between the first electrode and the third electrode becomes small, a gas is generated between the first electrode and the third electrode. And a large amount of charged particles move from the plasma between the first electrode and the second electrode between the first electrode and the third electrode. When charged particles move between the first electrode and the third electrode, plasma is generated between the first electrode and the third electrode due to the charged particles. As described above, plasma can be generated between the first electrode and the third electrode without applying a large discharge start voltage.

そして、第１の電極と第３の電極との間に発生したプラズマにより、第１の電極と第３の電極との間に配置された被処理体の処理が行われる。   Then, the object to be processed disposed between the first electrode and the third electrode is processed by the plasma generated between the first electrode and the third electrode.

請求項２に記載の発明は、高周波電圧が印加される第１の電極と、前記第１の電極に対して対向するように配置され、アース接続された第２の電極と、前記第１の電極と対向するように前記第２の電極の反対側に配置され、アース接続された第３の電極と、前記第１の電極に高周波電圧を印加する高周波電源と、前記第１の電極と前記第２の電極との間及び前記第１の電極と前記第３の電極との間にプラズマ化するガスを供給するガス供給手段と、前記第１の電極の前記第３の電極に対する離間距離を変更する方向に前記第１の電極を前記第２の電極とともに移動させ、かつ前記第２の電極の前記第１の電極に対する離間距離を変更する方向に前記第２の電極を移動させる駆動手段と、を含んで構成されたことを特徴とする。   According to a second aspect of the present invention, there is provided a first electrode to which a high frequency voltage is applied, a second electrode which is disposed so as to face the first electrode and is grounded, and the first electrode. A third electrode disposed on the opposite side of the second electrode so as to face the electrode and grounded; a high-frequency power source for applying a high-frequency voltage to the first electrode; the first electrode; Gas supply means for supplying a gas to be converted into plasma between the second electrode and between the first electrode and the third electrode; and a separation distance of the first electrode from the third electrode. Driving means for moving the first electrode together with the second electrode in a changing direction and moving the second electrode in a changing direction of a separation distance of the second electrode from the first electrode; It is characterized by including.

請求項２に記載の発明によれば、駆動手段により第１の電極と第２の電極が移動されて、第１の電極と第３の電極との離間距離が十分に大きくされ、被処理体が第３の電極上に載置される。そして、ガス供給手段により第１の電極と第２の電極との間にガスが供給される。   According to the second aspect of the present invention, the first electrode and the second electrode are moved by the driving means, and the separation distance between the first electrode and the third electrode is sufficiently increased. Is placed on the third electrode. Then, gas is supplied between the first electrode and the second electrode by the gas supply means.

次に、高周波電源により第１の電極に高周波電圧が印加されると、第２の電極がアース（接地）されているため、第１の電極と第２の電極との間に電位差が生じる。これにより、第１の電極と第２の電極との間にプラズマが発生する。   Next, when a high-frequency voltage is applied to the first electrode by the high-frequency power source, a potential difference is generated between the first electrode and the second electrode because the second electrode is grounded. Thereby, plasma is generated between the first electrode and the second electrode.

このとき、第１の電極と第３の電極との離間距離が大きいため、第１の電極と第３の電極との間にプラズマが発生することはない。このため、第３の電極上に載置された被処理体にプラズマが作用することがない。   At this time, since the separation distance between the first electrode and the third electrode is large, plasma is not generated between the first electrode and the third electrode. For this reason, the plasma does not act on the object to be processed placed on the third electrode.

次に、第１の電極と第２の電極との間に発生したプラズマが安定すると、第１の電極と第３の電極との離間距離が小さくなるように、駆動手段により第１の電極と第２の電極が第３の電極側に移動される。   Next, when the plasma generated between the first electrode and the second electrode is stabilized, the driving means causes the first electrode and the third electrode to be separated from each other so that the separation distance between the first electrode and the third electrode is reduced. The second electrode is moved to the third electrode side.

第１の電極と第２の電極が第３の電極側に移動され、第１の電極と第３の電極との離間距離が小さくなると、第１の電極と第３の電極との間にガスが供給されるとともに、第１の電極と第２の電極との間のプラズマから多量の荷電粒子が第１の電極と第３の電極との間に流れる。第１の電極と第３の電極との間に荷電粒子が流れると、この荷電粒子が原因となって第１の電極と第３の電極との間にプラズマが発生する。このように、第１の電極と第３の電極との間には、放電開始電圧を印加させることなくプラズマを発生させることができる。   When the first electrode and the second electrode are moved to the third electrode side, and the separation distance between the first electrode and the third electrode becomes small, a gas is generated between the first electrode and the third electrode. And a large amount of charged particles flow from the plasma between the first electrode and the second electrode between the first electrode and the third electrode. When charged particles flow between the first electrode and the third electrode, plasma is generated between the first electrode and the third electrode due to the charged particles. As described above, plasma can be generated between the first electrode and the third electrode without applying a discharge start voltage.

ここで、第１の電極と第３の電極との間にプラズマが発生すると同時に、駆動手段により第２の電極のみが移動され、第２の電極と第１の電極との離間距離が大きくされる。これにより、第１の電極と第２の電極との間に発生していたプラズマが消滅する。この結果、第１の電極と第３の電極との間のみプラズマが存在している状態になり、このプラズマにより第３の電極上に載置された被処理体の処理が行われる。   Here, at the same time as plasma is generated between the first electrode and the third electrode, only the second electrode is moved by the driving means, and the separation distance between the second electrode and the first electrode is increased. The As a result, the plasma generated between the first electrode and the second electrode disappears. As a result, the plasma exists only between the first electrode and the third electrode, and the object to be processed placed on the third electrode is processed by this plasma.

請求項３に記載の発明は、アース接続された第１の電極と、前記第１の電極に対して対向するように配置され、高周波電圧が印加される第２の電極と、前記第１の電極と対向するように前記第２の電極の反対側に配置され、アース接続された第３の電極と、前記第２の電極に高周波電圧を印加する高周波電源と、前記第１の電極と前記第２の電極との間及び前記第１の電極と前記第３の電極との間にプラズマ化するガスを供給するガス供給手段と、前記第１の電極の前記第３の電極に対する離間距離を変更する方向に前記第１の電極を前記第２の電極とともに移動させる駆動手段と、を含んで構成されたことを特徴とする。   According to a third aspect of the present invention, there is provided a first electrode that is grounded, a second electrode that is disposed so as to face the first electrode, and to which a high-frequency voltage is applied, and the first electrode A third electrode disposed on the opposite side of the second electrode so as to face the electrode and grounded; a high-frequency power source for applying a high-frequency voltage to the second electrode; the first electrode; Gas supply means for supplying a gas to be converted into plasma between the second electrode and between the first electrode and the third electrode; and a separation distance of the first electrode from the third electrode. Driving means for moving the first electrode together with the second electrode in a changing direction.

請求項３に記載の発明によれば、駆動手段により第１の電極と第２の電極が移動されて、第１の電極と第３の電極との離間距離を十分に大きくされ、被処理体が第３の電極上に載置される。そして、ガス供給手段により第１の電極と第２の電極との間にガスが供給される。   According to the third aspect of the present invention, the first electrode and the second electrode are moved by the driving means to sufficiently increase the separation distance between the first electrode and the third electrode, and the object to be processed Is placed on the third electrode. Then, gas is supplied between the first electrode and the second electrode by the gas supply means.

次に、高周波電源により第２の電極に高周波電圧が印加されると、第１の電極がアース（接地）されているため、第１の電極と第２の電極との間に電位差が生じる。これにより、第１の電極と第２の電極との間にプラズマが発生する。   Next, when a high-frequency voltage is applied to the second electrode from the high-frequency power source, the first electrode is grounded, so that a potential difference is generated between the first electrode and the second electrode. Thereby, plasma is generated between the first electrode and the second electrode.

このとき、第１の電極と第３の電極との離間距離が大きいため、第１の電極と第３の電極との間にプラズマが発生することはない。このため、第３の電極上に載置された被処理体にプラズマが作用することがない。   At this time, since the separation distance between the first electrode and the third electrode is large, plasma is not generated between the first electrode and the third electrode. For this reason, the plasma does not act on the object to be processed placed on the third electrode.

次に、第１の電極と第２の電極との間に発生したプラズマが安定すると、第１の電極と第３の電極との離間距離が小さくなるように、駆動手段により第１の電極と第２の電極が第３の電極側に移動される。   Next, when the plasma generated between the first electrode and the second electrode is stabilized, the driving means causes the first electrode and the third electrode to be separated from each other so that the separation distance between the first electrode and the third electrode is reduced. The second electrode is moved to the third electrode side.

第１の電極と第２の電極が第３の電極側に移動され、第１の電極と第３の電極との離間距離が小さくなると、第１の電極と第３の電極との間にガスが供給されるとともに、第１の電極と第２の電極との間のプラズマから多量の荷電粒子が第１の電極と第３の電極との間に流れる。第１の電極は第１の電極と第２の電極との間のプラズマにより低い電位を持っていることから、第１の電極と第３の電極との間に荷電粒子が流れると、この荷電粒子が原因となって第１の電極と第３の電極との間にプラズマが発生する。このように、第１の電極と第３の電極との間には、放電開始電圧を印加させることなくプラズマを発生させることができる。また、高周波電圧が印加される第２の電極が第３の電極から離れた位置にあり、第１の電極は低い電位を持っており、第３の電極は接地されているため、放電開始電圧だけでなく放電維持電圧も低くすることができ、第１の電極と第３の電極との間に低電位のプラズマを発生させることができる。   When the first electrode and the second electrode are moved to the third electrode side, and the separation distance between the first electrode and the third electrode becomes small, a gas is generated between the first electrode and the third electrode. And a large amount of charged particles flow from the plasma between the first electrode and the second electrode between the first electrode and the third electrode. Since the first electrode has a lower potential due to the plasma between the first electrode and the second electrode, when charged particles flow between the first electrode and the third electrode, the charge is charged. Plasma is generated between the first electrode and the third electrode due to the particles. As described above, plasma can be generated between the first electrode and the third electrode without applying a discharge start voltage. In addition, since the second electrode to which the high-frequency voltage is applied is located away from the third electrode, the first electrode has a low potential, and the third electrode is grounded, the discharge start voltage In addition, the discharge sustaining voltage can be lowered, and low potential plasma can be generated between the first electrode and the third electrode.

そして、第１の電極と第３の電極との間に発生したプラズマにより、第１の電極と第３の電極との間に配置された被処理体の処理が行われる。   Then, the object to be processed disposed between the first electrode and the third electrode is processed by the plasma generated between the first electrode and the third electrode.

請求項４に記載の発明は、高周波電圧が印加される第１の電極と、前記第１の電極に対して対向するように配置され、アース接続された第２の電極と、前記第１の電極と対向するように前記第２の電極の反対側に配置され、アース接続された第３の電極と、前記第１の電極に高周波電圧を印加する高周波電源と、を有する放電プラズマ処理装置を用いた放電プラズマ処理方法であって、前記第３の電極から所定距離以上に離間した前記第１の電極と前記第２の電極との間にプラズマ化するガスが供給され、前記第１の電極に前記高周波電圧が印加されて前記第１の電極と前記第２の電極との間にプラズマを発生させる第１プラズマ発生工程と、前記第１の電極と前記第３の電極との離間距離が小さくなるように前記第１の電極が前記第２の電極とともに前記第３の電極側に移動される移動工程と、前記第１の電極が前記第２の電極とともに前記第３の電極側に移動され、前記第１の電極と前記第３の電極との間にプラズマ化するガスが供給されて前記第１の電極と前記第３の電極との間にプラズマを発生させる第２プラズマ発生工程と、前記第２プラズマ発生工程で発生したプラズマにより被処理体の処理を行う処理工程と、を有することを特徴とする。   According to a fourth aspect of the present invention, there is provided a first electrode to which a high frequency voltage is applied, a second electrode which is disposed so as to face the first electrode and is grounded, and the first electrode. A discharge plasma processing apparatus having a third electrode disposed on the opposite side of the second electrode so as to face the electrode and connected to the ground, and a high-frequency power source for applying a high-frequency voltage to the first electrode In the discharge plasma processing method used, a gas that is converted into plasma is supplied between the first electrode and the second electrode that are separated from the third electrode by a predetermined distance or more, and the first electrode A first plasma generation step of generating a plasma between the first electrode and the second electrode by applying the high-frequency voltage to the first electrode; and a separation distance between the first electrode and the third electrode. The first electrode is connected to the second electrode so as to be smaller. And the moving step moved to the third electrode side, the first electrode is moved to the third electrode side together with the second electrode, and the first electrode and the third electrode A second plasma generating step for generating a plasma between the first electrode and the third electrode by supplying a gas to be converted into plasma, and an object to be processed by the plasma generated in the second plasma generating step And a processing step for performing the above processing.

請求項４に記載の発明によれば、第１プラズマ発生工程において、第３の電極から所定距離以上に離間した第１の電極と第２の電極との間にプラズマ化するガスが供給され、第１の電極に高周波電圧が印加されて第１の電極と第２の電極との間にプラズマを発生させる。移動工程において、第１の電極と第３の電極との離間距離が小さくなるように第１の電極が第２の電極とともに第３の電極側に移動される。第２プラズマ発生工程において、第１の電極が第２の電極とともに第３の電極側に移動され、第１の電極と第３の電極との間にプラズマ化するガスが供給されて第１の電極と第３の電極との間にプラズマを発生させる。第２プラズマ発生工程で発生したプラズマにより被処理体の処理が行われる。   According to the fourth aspect of the present invention, in the first plasma generation step, a gas that is converted into plasma is supplied between the first electrode and the second electrode that are separated from the third electrode by a predetermined distance or more, A high frequency voltage is applied to the first electrode to generate plasma between the first electrode and the second electrode. In the moving step, the first electrode is moved to the third electrode side together with the second electrode so that the separation distance between the first electrode and the third electrode is reduced. In the second plasma generation step, the first electrode is moved together with the second electrode to the third electrode side, and a gas that is converted into plasma is supplied between the first electrode and the third electrode, whereby the first electrode is supplied. Plasma is generated between the electrode and the third electrode. The object to be processed is processed by the plasma generated in the second plasma generation step.

請求項５に記載の発明は、高周波電圧が印加される第１の電極と、前記第１の電極に対して対向するように配置され、アース接続された第２の電極と、前記第１の電極と対向するように前記第２の電極の反対側に配置され、アース接続された第３の電極と、前記第１の電極に高周波電圧を印加する高周波電源と、を有する放電プラズマ処理装置を用いた放電プラズマ処理方法であって、前記第３の電極から所定距離以上に離間した前記第１の電極と前記第２の電極との間にプラズマ化するガスが供給され、前記第１の電極に前記高周波電圧が印加されて前記第１の電極と前記第２の電極との間にプラズマを発生させる第１プラズマ発生工程と、前記第１の電極と前記第３の電極との離間距離が小さくなるように前記第１の電極が前記第２の電極とともに前記第３の電極側に移動される第１移動工程と、前記第１の電極が前記第２の電極とともに前記第３の電極側に移動され、前記第１の電極と前記第３の電極との間にプラズマ化するガスが供給されて前記第１の電極と前記第３の電極との間にプラズマを発生させる第２プラズマ発生工程と、前記第２プラズマ発生工程によりプラズマが発生されると同時に、前記第１の電極と前記第２の電極との離間距離が大きくなるように前記第２の電極が前記第１の電極に対して移動される第２移動工程と、前記第２プラズマ発生工程で発生したプラズマにより被処理体の処理を行う処理工程と、を有することを特徴とする。   According to a fifth aspect of the present invention, there is provided a first electrode to which a high-frequency voltage is applied, a second electrode which is disposed so as to face the first electrode and is grounded, and the first electrode. A discharge plasma processing apparatus having a third electrode disposed on the opposite side of the second electrode so as to face the electrode and connected to the ground, and a high-frequency power source for applying a high-frequency voltage to the first electrode In the discharge plasma processing method used, a gas that is converted into plasma is supplied between the first electrode and the second electrode that are separated from the third electrode by a predetermined distance or more, and the first electrode A first plasma generation step of generating a plasma between the first electrode and the second electrode by applying the high-frequency voltage to the first electrode; and a separation distance between the first electrode and the third electrode. The first electrode is connected to the second electrode so as to be smaller. And a first moving step that is moved to the third electrode side, and the first electrode is moved to the third electrode side together with the second electrode, and the first electrode and the third electrode A plasma is generated by the second plasma generation step in which a gas to be converted into plasma is supplied to generate plasma between the first electrode and the third electrode, and the second plasma generation step. At the same time, a second moving step in which the second electrode is moved with respect to the first electrode so that a separation distance between the first electrode and the second electrode is increased, and the second plasma And a processing step of processing the object to be processed by the plasma generated in the generation step.

請求項５に記載の発明によれば、第１プラズマ発生工程において、第３の電極から所定距離以上に離間した第１の電極と第２の電極との間にプラズマ化するガスが供給され、第１の電極に高周波電圧が印加されて第１の電極と第２の電極との間にプラズマを発生させる。第１移動工程において、第１の電極と第３の電極との離間距離が小さくなるように第１の電極が第２の電極とともに第３の電極側に移動される。第２プラズマ発生工程において、第１の電極が第２の電極とともに第３の電極側に移動され、第１の電極と第３の電極との間にプラズマ化するガスが供給されて第１の電極と第３の電極との間にプラズマを発生させる。第２移動工程において、第２プラズマ発生工程によりプラズマが発生されると同時に、第１の電極と第２の電極との離間距離が大きくなるように第２の電極が第１の電極に対して移動される。処理工程において、第２プラズマ発生工程で発生したプラズマにより被処理体の処理が行われる。   According to the invention described in claim 5, in the first plasma generation step, a gas that is converted into plasma is supplied between the first electrode and the second electrode that are separated from the third electrode by a predetermined distance or more, A high frequency voltage is applied to the first electrode to generate plasma between the first electrode and the second electrode. In the first moving step, the first electrode is moved to the third electrode side together with the second electrode so that the separation distance between the first electrode and the third electrode is reduced. In the second plasma generation step, the first electrode is moved together with the second electrode to the third electrode side, and a gas that is converted into plasma is supplied between the first electrode and the third electrode, whereby the first electrode is supplied. Plasma is generated between the electrode and the third electrode. In the second moving step, the second electrode is moved relative to the first electrode so that the distance between the first electrode and the second electrode is increased simultaneously with the generation of plasma by the second plasma generation step. Moved. In the processing step, the object to be processed is processed by the plasma generated in the second plasma generation step.

請求項６に記載の発明は、アース接続された第１の電極と、前記第１の電極に対して対向するように配置され、高周波電圧が印加される第２の電極と、前記第１の電極と対向するように前記第２の電極の反対側に配置され、アース接続された第３の電極と、前記第２の電極に高周波電圧を印加する高周波電源と、を有する放電プラズマ処理装置を用いた放電プラズマ処理方法であって、前記第３の電極から所定距離以上に離間した前記第１の電極と前記第２の電極との間にプラズマ化するガスが供給され、前記第２の電極に前記高周波電圧が印加されて前記第１の電極と前記第２の電極との間にプラズマを発生させる第１プラズマ発生工程と、前記第１の電極と前記第３の電極との離間距離が小さくなるように前記第１の電極が前記第２の電極とともに前記第３の電極側に移動される移動工程と、前記第１の電極が前記第２の電極とともに前記第３の電極側に移動され、前記第１の電極と前記第３の電極との間にプラズマ化するガスが供給されて前記第１の電極と前記第３の電極との間にプラズマを発生させる第２プラズマ発生工程と、前記第２プラズマ発生工程で発生したプラズマにより被処理体の処理を行う処理工程と、を有することを特徴とする。   According to a sixth aspect of the present invention, there is provided a first electrode that is grounded, a second electrode that is disposed so as to face the first electrode, and to which a high-frequency voltage is applied, and the first electrode A discharge plasma processing apparatus having a third electrode disposed on the opposite side of the second electrode so as to face the electrode and connected to ground, and a high-frequency power source for applying a high-frequency voltage to the second electrode In the discharge plasma processing method used, a gas that is converted into plasma is supplied between the first electrode and the second electrode that are separated from the third electrode by a predetermined distance or more, and the second electrode A first plasma generation step of generating a plasma between the first electrode and the second electrode by applying the high-frequency voltage to the first electrode; and a separation distance between the first electrode and the third electrode. The first electrode is connected to the second electrode so as to be smaller. And the moving step moved to the third electrode side, the first electrode is moved to the third electrode side together with the second electrode, and the first electrode and the third electrode A second plasma generating step for generating a plasma between the first electrode and the third electrode by supplying a gas to be converted into plasma, and an object to be processed by the plasma generated in the second plasma generating step And a processing step for performing the above processing.

請求項６に記載の発明によれば、第１プラズマ発生工程において、第３の電極から所定距離以上に離間した第１の電極と第２の電極との間にプラズマ化するガスが供給され、第２の電極に高周波電圧が印加されて第１の電極と第２の電極との間にプラズマを発生させる。移動工程において、第１の電極と第３の電極との離間距離が小さくなるように第１の電極が第２の電極とともに第３の電極側に移動される。第２プラズマ発生工程において、第１の電極が第２の電極とともに第３の電極側に移動され、第１の電極と第３の電極との間にプラズマ化するガスが供給されて第１の電極と第３の電極との間にプラズマを発生させる。処理工程において、第２プラズマ発生工程で発生したプラズマにより被処理体の処理が行われる。   According to the invention described in claim 6, in the first plasma generation step, a gas that is converted into plasma is supplied between the first electrode and the second electrode that are separated from the third electrode by a predetermined distance or more, A high frequency voltage is applied to the second electrode to generate plasma between the first electrode and the second electrode. In the moving step, the first electrode is moved to the third electrode side together with the second electrode so that the separation distance between the first electrode and the third electrode is reduced. In the second plasma generation step, the first electrode is moved together with the second electrode to the third electrode side, and a gas that is converted into plasma is supplied between the first electrode and the third electrode, whereby the first electrode is supplied. Plasma is generated between the electrode and the third electrode. In the processing step, the object to be processed is processed by the plasma generated in the second plasma generation step.

本発明によれば、簡易な構造で製造コストを抑制でき、かつ装置の製品寿命が低下することを防止するとともに、被処理体に対する処理精度を向上させ被処理体にプラズマダメージが生じることを防止できる。   According to the present invention, the manufacturing cost can be suppressed with a simple structure, and the product life of the apparatus can be prevented from being lowered, and the processing accuracy for the object to be processed can be improved and the plasma object can be prevented from being damaged. it can.

次に、本発明の第１実施形態に係る放電プラズマ処理装置について、図面を参照して説明する。   Next, a discharge plasma processing apparatus according to a first embodiment of the present invention will be described with reference to the drawings.

図１及び図２に示すように、放電プラズマ処理装置１０は、平板型の第１電極１２を備えている。この第１電極１２には、後述の高周波電源１４から高周波電圧が印加される。また、第１電極１２の上方には、第１電極１２に対して平行となるように、平板型の第２電極１６が配置されている。この第２電極１６は初期の電位がゼロとなるようにアース接続（接地）されている。また、第１電極１２の下方には、第１電極１２に対して平行となるように、平板型の第３電極１８が配置されている。この第３電極１８は初期の電位がゼロとなるようにアース接続（接地）されている。   As shown in FIGS. 1 and 2, the discharge plasma processing apparatus 10 includes a flat plate-type first electrode 12. A high frequency voltage is applied to the first electrode 12 from a high frequency power source 14 described later. A flat plate-like second electrode 16 is disposed above the first electrode 12 so as to be parallel to the first electrode 12. The second electrode 16 is grounded (grounded) so that the initial potential is zero. A flat plate-like third electrode 18 is disposed below the first electrode 12 so as to be parallel to the first electrode 12. The third electrode 18 is grounded (grounded) so that the initial potential is zero.

また、放電プラズマ処理装置１０は、高周波電源１４を備えている。上述のように、この高周波電源１４により、第１電極１２に高周波電圧が印加される。さらに、放電プラズマ処理装置１０は、ガスユニット２０を備えている。このガスユニット２０により、第１電極１２と第２電極１６との間及び第１電極１２と第３電極１８との間にはプラズマ化するガスが供給される。   Further, the discharge plasma processing apparatus 10 includes a high frequency power supply 14. As described above, a high frequency voltage is applied to the first electrode 12 by the high frequency power source 14. Further, the discharge plasma processing apparatus 10 includes a gas unit 20. The gas unit 20 supplies a gas that is converted into plasma between the first electrode 12 and the second electrode 16 and between the first electrode 12 and the third electrode 18.

なお、第１電極１２及び第２電極１６には、その厚み方向に貫通しガスが流れる複数の貫通孔２２がそれぞれ形成されている。これにより、ガスユニット２０から第２電極１６に形成された貫通孔２２に対してガスが供給されると、そのガスは第１電極１２と第２電極１６との間に充満し、さらに第１電極１２に形成された貫通孔２２を通って第１電極１２と第３電極１８との間に流れ込むようになる。   The first electrode 12 and the second electrode 16 are each formed with a plurality of through holes 22 that penetrate in the thickness direction and through which gas flows. Thereby, when gas is supplied from the gas unit 20 to the through hole 22 formed in the second electrode 16, the gas is filled between the first electrode 12 and the second electrode 16, and further the first It flows between the first electrode 12 and the third electrode 18 through the through hole 22 formed in the electrode 12.

また、第１電極１２と第２電極１６は、駆動ユニット２４と接続されており、第１電極１２と第２電極１６とは相互の離間距離を一定に維持した状態で、第１電極１２と第３電極１８との離間距離が変更する方向に、第１電極１２と第２電極１６が移動できるようになっている。   The first electrode 12 and the second electrode 16 are connected to the drive unit 24, and the first electrode 12 and the second electrode 16 are connected to the first electrode 12 in a state where the distance between the first electrode 12 and the second electrode 16 is kept constant. The first electrode 12 and the second electrode 16 can move in the direction in which the distance from the third electrode 18 changes.

次に、本実施形態に係る放電プラズマ処理装置を用いた放電プラズマ処理方法について、図面を参照して説明する。   Next, a discharge plasma processing method using the discharge plasma processing apparatus according to the present embodiment will be described with reference to the drawings.

図１に示すように、第１電極１２と第３電極１８との離間距離を十分に大きくするために、駆動ユニット２４により第１電極１２と第２電極１６が上方に移動される。そして、被処理体２６が第３電極１８上に載置され、ガスユニット２０により第２電極１６に形成された貫通孔２２に対してプラズマ化するガスが供給される。これにより、第１電極１２と第２電極１６との間には、ガスが充満する。   As shown in FIG. 1, the drive unit 24 moves the first electrode 12 and the second electrode 16 upward in order to sufficiently increase the separation distance between the first electrode 12 and the third electrode 18. Then, the object to be processed 26 is placed on the third electrode 18, and a gas to be converted into plasma is supplied to the through hole 22 formed in the second electrode 16 by the gas unit 20. Thereby, the gas is filled between the first electrode 12 and the second electrode 16.

次に、高周波電源１４により第１電極１２に高周波電圧が印加される。第１電極１２に高周波電圧が印加されると、第２電極１６がアース（接地）されているため、第１電極１２と第２電極１６との間に電位差が生じる。これにより、第１電極１２と第２電極１６との間にプラズマＰ１が発生する。   Next, a high frequency voltage is applied to the first electrode 12 by the high frequency power source 14. When a high frequency voltage is applied to the first electrode 12, a potential difference is generated between the first electrode 12 and the second electrode 16 because the second electrode 16 is grounded. Thereby, plasma P <b> 1 is generated between the first electrode 12 and the second electrode 16.

このとき、第１電極１２と第３電極１８との離間距離が大きいため、第１電極１２と第３電極１８との間にプラズマが発生することはない。このため、第３電極１８上に載置された被処理体２６にプラズマが作用することがない。   At this time, since the separation distance between the first electrode 12 and the third electrode 18 is large, plasma is not generated between the first electrode 12 and the third electrode 18. For this reason, plasma does not act on the object 26 to be processed placed on the third electrode 18.

次に、図２に示すように、第１電極１２と第２電極１６との間に発生したプラズマＰ１が安定すると、第１電極１２と第３電極１８との離間距離が小さくなるように、駆動ユニット２４により第１電極１２と第２電極１６が下方の第３電極１８側に移動される。   Next, as shown in FIG. 2, when the plasma P1 generated between the first electrode 12 and the second electrode 16 is stabilized, the separation distance between the first electrode 12 and the third electrode 18 is reduced. The drive unit 24 moves the first electrode 12 and the second electrode 16 to the lower third electrode 18 side.

第１電極１２と第２電極１６が下方の第３電極１８側に移動され、第１電極１２と第３電極１８との離間距離が小さくなると、第１電極１２に形成された貫通孔２２から第１電極１２と第３電極１８との間にガスが供給されるとともに、第１電極１２と第２電極１６との間のプラズマＰ１から多量の荷電粒子が第１電極１２に形成された貫通孔２２を通って第１電極１２と第３電極１８との間に移動する。第１電極１２と第３電極１８との間に荷電粒子が移動すると、この荷電粒子が原因となって第１電極１２と第３電極１８との間にプラズマＰ２が発生する。このように、第１電極１２と第３電極１８との間には、放電開始電圧を印加させることなくプラズマＰ２を発生させることができる。   When the first electrode 12 and the second electrode 16 are moved to the lower third electrode 18 side and the distance between the first electrode 12 and the third electrode 18 is reduced, the through-hole 22 formed in the first electrode 12 is removed. A gas is supplied between the first electrode 12 and the third electrode 18, and a large amount of charged particles are formed in the first electrode 12 from the plasma P1 between the first electrode 12 and the second electrode 16. It moves between the first electrode 12 and the third electrode 18 through the hole 22. When charged particles move between the first electrode 12 and the third electrode 18, plasma P <b> 2 is generated between the first electrode 12 and the third electrode 18 due to the charged particles. Thus, the plasma P2 can be generated between the first electrode 12 and the third electrode 18 without applying a discharge start voltage.

そして、第１電極１２と第３電極１８との間に発生したプラズマＰ２により、第１電極１２と第３電極１８との間に配置された被処理体２６の処理が行われる。   Then, the processing of the object 26 disposed between the first electrode 12 and the third electrode 18 is performed by the plasma P2 generated between the first electrode 12 and the third electrode 18.

以上のように、本実施形態によれば、放電開始電圧を必要とせずに第１電極１２と第３電極１８との間のプラズマＰ２が発生することにより、放電開始時に被処理体２６にプラズマダメージを生じさせることを防止できる。   As described above, according to the present embodiment, the plasma P2 between the first electrode 12 and the third electrode 18 is generated without the need for a discharge start voltage, so that plasma is generated on the object 26 at the start of discharge. It can be prevented from causing damage.

特に、本実施形態の放電プラズマ処理装置１０は、簡易な構造で実現することができるため製造コストを抑制することができる。また、従来技術のように金属を挿入したり、あるいは電極自体を高温に加熱することなどがないため、放電プラズマ処理装置１０の製品寿命が低下することを防止できる。   In particular, since the discharge plasma processing apparatus 10 of the present embodiment can be realized with a simple structure, the manufacturing cost can be suppressed. Further, since there is no metal insertion or heating of the electrode itself to a high temperature as in the prior art, it is possible to prevent the product life of the discharge plasma processing apparatus 10 from being reduced.

次に、本発明の第２実施形態に係る放電プラズマ処理装置について、図面を参照して説明する。なお、本実施形態に係る放電プラズマ処理装置は、第１実施形態に係る放電プラズマ処理装置をベースとしたものであるため、第１実施形態に係る放電プラズマ処理装置と重複する構成には同符号を付し、その説明を適宜省略する。   Next, a discharge plasma processing apparatus according to a second embodiment of the present invention will be described with reference to the drawings. Since the discharge plasma processing apparatus according to the present embodiment is based on the discharge plasma processing apparatus according to the first embodiment, the same reference numerals are used for the same components as those in the discharge plasma processing apparatus according to the first embodiment. The description is omitted as appropriate.

図３乃至図５に示すように、本実施形態の放電プラズマ処理装置３０は、第１電極１２と第２電極１６との離間距離を一定に維持した状態で、第１電極１２と第３電極１８との離間距離を変更する方向に第１電極１２と第２電極１６を移動させることができるとともに、第２電極１６と第１電極１２との離間距離を変更する方向に第２電極１６を移動させることができる駆動ユニット３２を備えている。   As shown in FIGS. 3 to 5, the discharge plasma processing apparatus 30 according to the present embodiment maintains the distance between the first electrode 12 and the second electrode 16 constant and maintains the first electrode 12 and the third electrode. The first electrode 12 and the second electrode 16 can be moved in the direction in which the separation distance from the first electrode 18 is changed, and the second electrode 16 is moved in the direction in which the separation distance between the second electrode 16 and the first electrode 12 is changed. A drive unit 32 that can be moved is provided.

次に、本実施形態に係る放電プラズマ処理装置を用いた放電プラズマ処理方法について、図面を参照して説明する。   Next, a discharge plasma processing method using the discharge plasma processing apparatus according to the present embodiment will be described with reference to the drawings.

図３に示すように、第１電極１２と第３電極１８との離間距離を十分に大きくするために、駆動ユニット３２により第１電極１２と第２電極１６が上方に移動され、その位置が調整される。そして、被処理体２６が第３電極１８上に載置され、ガスユニット２０により第２電極１６に形成された貫通孔２２に対してプラズマ化するガスが供給される。これにより、第１電極１２と第２電極１６との間には、ガスが充満する。   As shown in FIG. 3, in order to sufficiently increase the separation distance between the first electrode 12 and the third electrode 18, the first electrode 12 and the second electrode 16 are moved upward by the drive unit 32, and the position thereof is changed. Adjusted. Then, the object to be processed 26 is placed on the third electrode 18, and a gas to be converted into plasma is supplied to the through hole 22 formed in the second electrode 16 by the gas unit 20. Thereby, the gas is filled between the first electrode 12 and the second electrode 16.

次に、高周波電源１４により第１電極１２に高周波電圧が印加される。第１電極１２に高周波電圧が印加されると、第２電極１６がアース（接地）されているため、第１電極１２と第２電極１６との間に電位差が生じる。これにより、第１電極１２と第２電極１６との間にプラズマＰ１が発生する。   Next, a high frequency voltage is applied to the first electrode 12 by the high frequency power source 14. When a high frequency voltage is applied to the first electrode 12, a potential difference is generated between the first electrode 12 and the second electrode 16 because the second electrode 16 is grounded. Thereby, plasma P <b> 1 is generated between the first electrode 12 and the second electrode 16.

このとき、第１電極１２と第３電極１８との離間距離が大きいため、第１電極１２と第３電極１８との間にプラズマが発生することはない。このため、第３電極１８上に載置された被処理体２６にプラズマが作用することがない。   At this time, since the separation distance between the first electrode 12 and the third electrode 18 is large, plasma is not generated between the first electrode 12 and the third electrode 18. For this reason, plasma does not act on the object 26 to be processed placed on the third electrode 18.

次に、図４に示すように、第１電極１２と第２電極１６との間に発生したプラズマＰ１が安定すると、第１電極１２と第３電極１８との離間距離が小さくなるように、駆動ユニット３２により第１電極１２と第２電極１６が第３電極１８側に移動される。   Next, as shown in FIG. 4, when the plasma P1 generated between the first electrode 12 and the second electrode 16 is stabilized, the separation distance between the first electrode 12 and the third electrode 18 is reduced. The first electrode 12 and the second electrode 16 are moved to the third electrode 18 side by the drive unit 32.

第１電極１２と第２電極１６が下方の第３電極１８側に移動され、第１電極１２と第３電極１８との離間距離が小さくなると、第１電極１２に形成された貫通孔２２から第１電極１２と第３電極１８との間にガスが供給されるとともに、第１電極１２と第２電極１６との間のプラズマＰ１から多量の荷電粒子が第１電極１２に形成された貫通孔２２を通って第１電極１２と第３電極１８との間に流れる。第１電極１２と第３電極１８との間に荷電粒子が流れると、この荷電粒子が原因となって第１電極１２と第３電極１８との間にプラズマＰ２が発生する。このように、第１電極１２と第３電極１８との間には、放電開始電圧を印加させることなくプラズマＰ２を発生させることができる。   When the first electrode 12 and the second electrode 16 are moved to the lower third electrode 18 side and the distance between the first electrode 12 and the third electrode 18 is reduced, the through-hole 22 formed in the first electrode 12 is removed. A gas is supplied between the first electrode 12 and the third electrode 18, and a large amount of charged particles are formed in the first electrode 12 from the plasma P1 between the first electrode 12 and the second electrode 16. It flows between the first electrode 12 and the third electrode 18 through the hole 22. When charged particles flow between the first electrode 12 and the third electrode 18, plasma P <b> 2 is generated between the first electrode 12 and the third electrode 18 due to the charged particles. Thus, the plasma P2 can be generated between the first electrode 12 and the third electrode 18 without applying a discharge start voltage.

ここで、図５に示すように、第１電極１２と第３電極１８との間にプラズマＰ２が発生すると同時に、第２電極１６と第１電極１２との離間距離が大きくなるように、駆動ユニット３２により第２電極１６のみが上方に移動される。これにより、第２電極１６と第１電極１２との離間距離が大きくなり、第１電極１２と第２電極１６との間に発生していたプラズマＰ１が消滅する。この結果、第１電極１２と第３電極１８との間のみプラズマＰ２が存在している状態になり、このプラズマＰ２により第３電極１８上に載置された被処理体２６の処理が行われる。   Here, as shown in FIG. 5, the plasma P2 is generated between the first electrode 12 and the third electrode 18, and at the same time, the driving is performed so that the separation distance between the second electrode 16 and the first electrode 12 is increased. Only the second electrode 16 is moved upward by the unit 32. As a result, the distance between the second electrode 16 and the first electrode 12 is increased, and the plasma P1 generated between the first electrode 12 and the second electrode 16 disappears. As a result, the plasma P2 exists only between the first electrode 12 and the third electrode 18, and the processing of the object 26 placed on the third electrode 18 is performed by the plasma P2. .

以上のように、本実施形態によれば、被処理体２６の処理の際には、第１電極１２と第２電極１６との間のプラズマＰ１が消滅するため、電力密度が小さくなることがない。すなわち、第１電極１２と第３電極１８との間にプラズマＰ２が発生すると、供給される電力が一定であれば、放電空間体積が第１電極１２と第３電極１８との間の分（例えば２倍）だけ増加し、電力密度がその分だけ小さくなる（例えば１／２倍）。電力密度が小さくなると、被処理体２６のプラズマによる処理速度がその分だけ遅くなり、また、電力密度を大きくするために供給電力を増やすと、ランニングコストが上昇しさらには異常放電を起こす問題があるが、上述したように、第１電極１２と第２電極１６との間のプラズマＰ１を消滅させて放電空間体積の増加を抑制し電力密度を一定に維持することにより、上記問題を回避することができる。   As described above, according to the present embodiment, the plasma P1 between the first electrode 12 and the second electrode 16 is extinguished when the object 26 is processed, so that the power density is reduced. Absent. That is, when the plasma P2 is generated between the first electrode 12 and the third electrode 18, if the supplied power is constant, the discharge space volume is the amount between the first electrode 12 and the third electrode 18 ( For example, the power density is increased by a factor of two, and the power density is decreased by that amount (for example, a factor of 1/2). When the power density is reduced, the processing speed of the object to be processed 26 by plasma is reduced by that amount, and when the supply power is increased to increase the power density, the running cost increases and further abnormal discharge occurs. However, as described above, the above problem can be avoided by extinguishing the plasma P1 between the first electrode 12 and the second electrode 16 to suppress the increase in the discharge space volume and to keep the power density constant. be able to.

次に、本発明の第３実施形態に係る放電プラズマ処理装置について、図面を参照して説明する。なお、本実施形態に係る放電プラズマ処理装置は、第１実施形態に係る放電プラズマ処理装置をベースとしたものであるため、第１実施形態に係る放電プラズマ処理装置と重複する構成には同符号を付し、その説明を適宜省略する。   Next, a discharge plasma processing apparatus according to a third embodiment of the present invention will be described with reference to the drawings. Since the discharge plasma processing apparatus according to the present embodiment is based on the discharge plasma processing apparatus according to the first embodiment, the same reference numerals are used for the same components as those in the discharge plasma processing apparatus according to the first embodiment. The description is omitted as appropriate.

図６及び図７に示すように、本実施形態の放電プラズマ処理装置４０は、高周波電源１４から第２電極１６に対して高周波電圧を印加させるとともに、第１電極１２をアース接続（接地）させるように構成したものである。   As shown in FIGS. 6 and 7, the discharge plasma processing apparatus 40 of the present embodiment applies a high-frequency voltage from the high-frequency power source 14 to the second electrode 16 and grounds (grounds) the first electrode 12. It is comprised as follows.

次に、本実施形態に係る放電プラズマ処理装置を用いた放電プラズマ処理方法について、図面を参照して説明する。   Next, a discharge plasma processing method using the discharge plasma processing apparatus according to the present embodiment will be described with reference to the drawings.

図６に示すように、第１電極１２と第３電極１８との離間距離を十分に大きくするために、駆動ユニット２４により第１電極１２と第２電極１６が上方に移動される。そして、被処理体２６が第３電極１８上に載置され、ガスユニット２０により第２電極１６に形成された貫通孔２２に対してプラズマ化するガスが供給される。これにより、第１電極１２と第２電極１６との間には、ガスが充満する。   As shown in FIG. 6, the first electrode 12 and the second electrode 16 are moved upward by the drive unit 24 in order to sufficiently increase the separation distance between the first electrode 12 and the third electrode 18. Then, the object to be processed 26 is placed on the third electrode 18, and a gas to be converted into plasma is supplied to the through hole 22 formed in the second electrode 16 by the gas unit 20. Thereby, the gas is filled between the first electrode 12 and the second electrode 16.

次に、高周波電源１４により第２電極１６に高周波電圧が印加される。第２電極１６に高周波電圧が印加されると、第１電極１２がアース（接地）されているため、第１電極１２と第２電極１６との間に電位差が生じる。これにより、第１電極１２と第２電極１６との間にプラズマＰ１が発生する。   Next, a high frequency voltage is applied to the second electrode 16 by the high frequency power source 14. When a high frequency voltage is applied to the second electrode 16, a potential difference is generated between the first electrode 12 and the second electrode 16 because the first electrode 12 is grounded. Thereby, plasma P <b> 1 is generated between the first electrode 12 and the second electrode 16.

このとき、第１電極１２と第３電極１８との離間距離が大きいため、第１電極１２と第３電極１８との間にプラズマが発生することはない。このため、第３電極１８上に載置された被処理体２６にプラズマが作用することがない。   At this time, since the separation distance between the first electrode 12 and the third electrode 18 is large, plasma is not generated between the first electrode 12 and the third electrode 18. For this reason, plasma does not act on the object 26 to be processed placed on the third electrode 18.

次に、図７に示すように、第１電極１２と第２電極１６との間に発生したプラズマＰ１が安定すると、第１電極１２と第３電極１８との離間距離が小さくなるように、駆動ユニット２４により第１電極１２と第２電極１６が下方の第３電極１８側に移動される。   Next, as shown in FIG. 7, when the plasma P1 generated between the first electrode 12 and the second electrode 16 is stabilized, the separation distance between the first electrode 12 and the third electrode 18 is reduced. The drive unit 24 moves the first electrode 12 and the second electrode 16 to the lower third electrode 18 side.

第１電極１２と第２電極１６が下方の第３電極１８側に移動され、第１電極１２と第３電極１８との離間距離が小さくなると、第１電極１２に形成された貫通孔２２から第１電極１２と第３電極１８との間にガスが供給されるとともに、第１電極１２と第２電極１６との間のプラズマＰ１から多量の荷電粒子が第１電極１２に形成された貫通孔２２を通って第１電極１２と第３電極１８との間に流れる。第１電極１２は第１電極１２と第２電極１６との間のプラズマにより低い電位を持っていることから、第１電極１２と第３電極１８との間に荷電粒子が流れると、この荷電粒子が原因となって第１電極１２と第３電極１８との間にプラズマＰ２が発生する。このように、第１電極１２と第３電極１８との間には、放電開始電圧を印加させることなくプラズマＰ２を発生させることができる。また、高周波電圧が印加される第２電極１６が第３電極１８から離れた位置にあり、第１電極１２は低い電位を持っており、第３電極１８は接地されているため、放電開始電圧だけでなく放電維持電圧も低くすることができ、第１電極１２と第３電極１８との間に低電位のプラズマＰ２を発生させることができる。   When the first electrode 12 and the second electrode 16 are moved to the lower third electrode 18 side and the distance between the first electrode 12 and the third electrode 18 is reduced, the through-hole 22 formed in the first electrode 12 is removed. A gas is supplied between the first electrode 12 and the third electrode 18, and a large amount of charged particles are formed in the first electrode 12 from the plasma P1 between the first electrode 12 and the second electrode 16. It flows between the first electrode 12 and the third electrode 18 through the hole 22. Since the first electrode 12 has a lower potential due to the plasma between the first electrode 12 and the second electrode 16, when charged particles flow between the first electrode 12 and the third electrode 18, Plasma P2 is generated between the first electrode 12 and the third electrode 18 due to the particles. Thus, the plasma P2 can be generated between the first electrode 12 and the third electrode 18 without applying a discharge start voltage. Further, since the second electrode 16 to which the high-frequency voltage is applied is located away from the third electrode 18, the first electrode 12 has a low potential, and the third electrode 18 is grounded, the discharge start voltage In addition, the discharge sustaining voltage can be lowered, and low-potential plasma P <b> 2 can be generated between the first electrode 12 and the third electrode 18.

そして、第１電極１２と第３電極１８との間に発生したプラズマＰ２により、第１電極１２と第３電極１８との間に配置された被処理体２６の処理が行われる。   Then, the processing of the object 26 disposed between the first electrode 12 and the third electrode 18 is performed by the plasma P2 generated between the first electrode 12 and the third electrode 18.

以上のように、本実施形態によれば、放電維持電圧も低下させ、低電位のプラズマＰ２により被処理体２６の処理を行うことにより、被処理体２６のプラズマダメージを大幅に低減させることができる。この結果、被処理体２６の処理精度を一層向上させることができる。   As described above, according to the present embodiment, the discharge sustaining voltage is also reduced, and the processing of the target object 26 with the low-potential plasma P2 can greatly reduce the plasma damage of the target object 26. it can. As a result, the processing accuracy of the workpiece 26 can be further improved.

本発明の第１実施形態に係る放電プラズマ処理装置を用いた放電プラズマ処理方法の一工程を示す図である。It is a figure which shows 1 process of the discharge plasma processing method using the discharge plasma processing apparatus which concerns on 1st Embodiment of this invention. 本発明の第１実施形態に係る放電プラズマ処理装置を用いた放電プラズマ処理方法の一工程を示す図である。It is a figure which shows 1 process of the discharge plasma processing method using the discharge plasma processing apparatus which concerns on 1st Embodiment of this invention. 本発明の第２実施形態に係る放電プラズマ処理装置を用いた放電プラズマ処理方法の一工程を示す図である。It is a figure which shows 1 process of the discharge plasma processing method using the discharge plasma processing apparatus which concerns on 2nd Embodiment of this invention. 本発明の第２実施形態に係る放電プラズマ処理装置を用いた放電プラズマ処理方法の一工程を示す図である。It is a figure which shows 1 process of the discharge plasma processing method using the discharge plasma processing apparatus which concerns on 2nd Embodiment of this invention. 本発明の第２実施形態に係る放電プラズマ処理装置を用いた放電プラズマ処理方法の一工程を示す図である。It is a figure which shows 1 process of the discharge plasma processing method using the discharge plasma processing apparatus which concerns on 2nd Embodiment of this invention. 本発明の第３実施形態に係る放電プラズマ処理装置を用いた放電プラズマ処理方法の一工程を示す図である。It is a figure which shows 1 process of the discharge plasma processing method using the discharge plasma processing apparatus which concerns on 3rd Embodiment of this invention. 本発明の第３実施形態に係る放電プラズマ処理装置を用いた放電プラズマ処理方法の一工程を示す図である。It is a figure which shows 1 process of the discharge plasma processing method using the discharge plasma processing apparatus which concerns on 3rd Embodiment of this invention.

符号の説明Explanation of symbols

１０、３０、４０ 放電プラズマ処理装置
１２ 第１電極（第１の電極）
１４ 高周波電源
１６ 第２電極（第２の電極）
１８ 第３電極（第３の電極）
２０ ガスユニット（ガス供給手段）
２４、３２ 駆動ユニット（駆動手段）
10, 30, 40 Discharge plasma treatment apparatus 12 First electrode (first electrode)
14 High-frequency power supply 16 Second electrode (second electrode)
18 Third electrode (third electrode)
20 Gas unit (gas supply means)
24, 32 Drive unit (drive means)

Claims (6)

高周波電圧が印加される第１の電極と、
前記第１の電極に対して対向するように配置され、アース接続された第２の電極と、
前記第１の電極と対向するように前記第２の電極の反対側に配置され、アース接続された第３の電極と、
前記第１の電極に高周波電圧を印加する高周波電源と、
前記第１の電極と前記第２の電極との間及び前記第１の電極と前記第３の電極との間にプラズマ化するガスを供給するガス供給手段と、
前記第１の電極の前記第３の電極に対する離間距離を変更する方向に前記第１の電極を前記第２の電極とともに移動させる駆動手段と、
を含んで構成されたことを特徴とする放電プラズマ処理装置。 A first electrode to which a high-frequency voltage is applied;
A second electrode disposed to face the first electrode and grounded;
A third electrode disposed on the opposite side of the second electrode so as to face the first electrode and grounded;
A high frequency power supply for applying a high frequency voltage to the first electrode;
Gas supply means for supplying a gas to be converted into plasma between the first electrode and the second electrode and between the first electrode and the third electrode;
Driving means for moving the first electrode together with the second electrode in a direction to change a separation distance of the first electrode from the third electrode;
A discharge plasma processing apparatus comprising: 高周波電圧が印加される第１の電極と、
前記第１の電極に対して対向するように配置され、アース接続された第２の電極と、
前記第１の電極と対向するように前記第２の電極の反対側に配置され、アース接続された第３の電極と、
前記第１の電極に高周波電圧を印加する高周波電源と、
前記第１の電極と前記第２の電極との間及び前記第１の電極と前記第３の電極との間にプラズマ化するガスを供給するガス供給手段と、
前記第１の電極の前記第３の電極に対する離間距離を変更する方向に前記第１の電極を前記第２の電極とともに移動させ、かつ前記第２の電極の前記第１の電極に対する離間距離を変更する方向に前記第２の電極を移動させる駆動手段と、
を含んで構成されたことを特徴とする放電プラズマ処理装置。 A first electrode to which a high-frequency voltage is applied;
A second electrode disposed to face the first electrode and grounded;
A third electrode disposed on the opposite side of the second electrode so as to face the first electrode and grounded;
A high frequency power supply for applying a high frequency voltage to the first electrode;
Gas supply means for supplying a gas to be converted into plasma between the first electrode and the second electrode and between the first electrode and the third electrode;
The first electrode is moved together with the second electrode in a direction to change the separation distance of the first electrode from the third electrode, and the separation distance of the second electrode from the first electrode is increased. Driving means for moving the second electrode in a changing direction;
A discharge plasma processing apparatus comprising: アース接続された第１の電極と、
前記第１の電極に対して対向するように配置され、高周波電圧が印加される第２の電極と、
前記第１の電極と対向するように前記第２の電極の反対側に配置され、アース接続された第３の電極と、
前記第２の電極に高周波電圧を印加する高周波電源と、
前記第１の電極と前記第２の電極との間及び前記第１の電極と前記第３の電極との間にプラズマ化するガスを供給するガス供給手段と、
前記第１の電極の前記第３の電極に対する離間距離を変更する方向に前記第１の電極を前記第２の電極とともに移動させる駆動手段と、
を含んで構成されたことを特徴とする放電プラズマ処理装置。 A first electrode connected to ground;
A second electrode disposed to face the first electrode and to which a high-frequency voltage is applied;
A third electrode disposed on the opposite side of the second electrode to face the first electrode and grounded;
A high frequency power source for applying a high frequency voltage to the second electrode;
Gas supply means for supplying a gas to be converted into plasma between the first electrode and the second electrode and between the first electrode and the third electrode;
Driving means for moving the first electrode together with the second electrode in a direction to change a separation distance of the first electrode from the third electrode;
A discharge plasma processing apparatus comprising: 高周波電圧が印加される第１の電極と、前記第１の電極に対して対向するように配置され、アース接続された第２の電極と、前記第１の電極と対向するように前記第２の電極の反対側に配置され、アース接続された第３の電極と、前記第１の電極に高周波電圧を印加する高周波電源と、を有する放電プラズマ処理装置を用いた放電プラズマ処理方法であって、
前記第３の電極から所定距離以上に離間した前記第１の電極と前記第２の電極との間にプラズマ化するガスが供給され、前記第１の電極に前記高周波電圧が印加されて前記第１の電極と前記第２の電極との間にプラズマを発生させる第１プラズマ発生工程と、
前記第１の電極と前記第３の電極との離間距離が小さくなるように前記第１の電極が前記第２の電極とともに前記第３の電極側に移動される移動工程と、
前記第１の電極が前記第２の電極とともに前記第３の電極側に移動され、前記第１の電極と前記第３の電極との間にプラズマ化するガスが供給されて前記第１の電極と前記第３の電極との間にプラズマを発生させる第２プラズマ発生工程と、
前記第２プラズマ発生工程で発生したプラズマにより被処理体の処理を行う処理工程と、
を有することを特徴とする放電プラズマ処理方法。 A first electrode to which a high-frequency voltage is applied, a second electrode that is disposed so as to face the first electrode and is grounded, and the second electrode so as to face the first electrode A discharge plasma processing method using a discharge plasma processing apparatus having a third electrode disposed on the opposite side of the first electrode and connected to ground, and a high frequency power source for applying a high frequency voltage to the first electrode. ,
A gas that is converted into plasma is supplied between the first electrode and the second electrode that are separated from the third electrode by a predetermined distance or more, and the high-frequency voltage is applied to the first electrode, so that the first electrode is applied. A first plasma generation step of generating plasma between one electrode and the second electrode;
A moving step in which the first electrode is moved to the third electrode side together with the second electrode so that a separation distance between the first electrode and the third electrode is reduced;
The first electrode is moved together with the second electrode to the third electrode side, and a gas that is converted into plasma is supplied between the first electrode and the third electrode, whereby the first electrode A second plasma generation step for generating plasma between the first electrode and the third electrode;
A processing step of processing the object to be processed by the plasma generated in the second plasma generation step;
A discharge plasma processing method comprising: 高周波電圧が印加される第１の電極と、前記第１の電極に対して対向するように配置され、アース接続された第２の電極と、前記第１の電極と対向するように前記第２の電極の反対側に配置され、アース接続された第３の電極と、前記第１の電極に高周波電圧を印加する高周波電源と、を有する放電プラズマ処理装置を用いた放電プラズマ処理方法であって、
前記第３の電極から所定距離以上に離間した前記第１の電極と前記第２の電極との間にプラズマ化するガスが供給され、前記第１の電極に前記高周波電圧が印加されて前記第１の電極と前記第２の電極との間にプラズマを発生させる第１プラズマ発生工程と、
前記第１の電極と前記第３の電極との離間距離が小さくなるように前記第１の電極が前記第２の電極とともに前記第３の電極側に移動される第１移動工程と、
前記第１の電極が前記第２の電極とともに前記第３の電極側に移動され、前記第１の電極と前記第３の電極との間にプラズマ化するガスが供給されて前記第１の電極と前記第３の電極との間にプラズマを発生させる第２プラズマ発生工程と、
前記第２プラズマ発生工程によりプラズマが発生されると同時に、前記第１の電極と前記第２の電極との離間距離が大きくなるように前記第２の電極が前記第１の電極に対して移動される第２移動工程と、
前記第２プラズマ発生工程で発生したプラズマにより被処理体の処理を行う処理工程と、
を有することを特徴とする放電プラズマ処理方法。 A first electrode to which a high-frequency voltage is applied, a second electrode that is disposed so as to face the first electrode and is grounded, and the second electrode so as to face the first electrode A discharge plasma processing method using a discharge plasma processing apparatus having a third electrode disposed on the opposite side of the first electrode and connected to ground, and a high frequency power source for applying a high frequency voltage to the first electrode. ,
A gas that is converted into plasma is supplied between the first electrode and the second electrode that are separated from the third electrode by a predetermined distance or more, and the high-frequency voltage is applied to the first electrode, so that the first electrode is applied. A first plasma generation step of generating plasma between one electrode and the second electrode;
A first moving step in which the first electrode is moved to the third electrode side together with the second electrode so that a separation distance between the first electrode and the third electrode is reduced;
The first electrode is moved together with the second electrode to the third electrode side, and a gas that is converted into plasma is supplied between the first electrode and the third electrode, whereby the first electrode A second plasma generation step for generating plasma between the first electrode and the third electrode;
At the same time as plasma is generated by the second plasma generation step, the second electrode moves relative to the first electrode so that the distance between the first electrode and the second electrode is increased. A second moving step,
A processing step of processing the object to be processed by the plasma generated in the second plasma generation step;
A discharge plasma processing method comprising: アース接続された第１の電極と、前記第１の電極に対して対向するように配置され、高周波電圧が印加される第２の電極と、前記第１の電極と対向するように前記第２の電極の反対側に配置され、アース接続された第３の電極と、前記第２の電極に高周波電圧を印加する高周波電源と、を有する放電プラズマ処理装置を用いた放電プラズマ処理方法であって、
前記第３の電極から所定距離以上に離間した前記第１の電極と前記第２の電極との間にプラズマ化するガスが供給され、前記第２の電極に前記高周波電圧が印加されて前記第１の電極と前記第２の電極との間にプラズマを発生させる第１プラズマ発生工程と、
前記第１の電極と前記第３の電極との離間距離が小さくなるように前記第１の電極が前記第２の電極とともに前記第３の電極側に移動される移動工程と、
前記第１の電極が前記第２の電極とともに前記第３の電極側に移動され、前記第１の電極と前記第３の電極との間にプラズマ化するガスが供給されて前記第１の電極と前記第３の電極との間にプラズマを発生させる第２プラズマ発生工程と、
前記第２プラズマ発生工程で発生したプラズマにより被処理体の処理を行う処理工程と、
を有することを特徴とする放電プラズマ処理方法。
The first electrode connected to the ground, the second electrode disposed so as to face the first electrode, to which a high frequency voltage is applied, and the second electrode so as to face the first electrode A discharge plasma processing method using a discharge plasma processing apparatus having a third electrode disposed on the opposite side of the electrode and grounded, and a high frequency power source for applying a high frequency voltage to the second electrode. ,
A gas that is converted into plasma is supplied between the first electrode and the second electrode that are spaced apart from the third electrode by a predetermined distance or more, and the high-frequency voltage is applied to the second electrode, so that the first electrode A first plasma generation step of generating plasma between one electrode and the second electrode;
A moving step in which the first electrode is moved to the third electrode side together with the second electrode so that a separation distance between the first electrode and the third electrode is reduced;
The first electrode is moved together with the second electrode to the third electrode side, and a gas that is converted into plasma is supplied between the first electrode and the third electrode, whereby the first electrode A second plasma generation step for generating plasma between the first electrode and the third electrode;
A processing step of processing the object to be processed by the plasma generated in the second plasma generation step;
A discharge plasma processing method comprising:
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