JP2007126622A - Adhesive sheet, semiconductor device and manufacturing method of semiconductor device - Google Patents
Adhesive sheet, semiconductor device and manufacturing method of semiconductor device Download PDFInfo
- Publication number
- JP2007126622A JP2007126622A JP2006014267A JP2006014267A JP2007126622A JP 2007126622 A JP2007126622 A JP 2007126622A JP 2006014267 A JP2006014267 A JP 2006014267A JP 2006014267 A JP2006014267 A JP 2006014267A JP 2007126622 A JP2007126622 A JP 2007126622A
- Authority
- JP
- Japan
- Prior art keywords
- adhesive sheet
- adhesive
- semiconductor chip
- wafer
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000853 adhesive Substances 0.000 title claims abstract description 186
- 230000001070 adhesive effect Effects 0.000 title claims abstract description 183
- 239000004065 semiconductor Substances 0.000 title claims abstract description 122
- 238000004519 manufacturing process Methods 0.000 title claims description 21
- 239000002245 particle Substances 0.000 claims abstract description 50
- 229920005989 resin Polymers 0.000 claims abstract description 37
- 239000011347 resin Substances 0.000 claims abstract description 37
- 238000011049 filling Methods 0.000 claims abstract description 27
- 239000012790 adhesive layer Substances 0.000 claims description 45
- 239000000758 substrate Substances 0.000 claims description 39
- 238000000034 method Methods 0.000 claims description 27
- 238000009413 insulation Methods 0.000 abstract description 14
- 239000000155 melt Substances 0.000 abstract description 8
- 239000003822 epoxy resin Substances 0.000 description 30
- 229920000647 polyepoxide Polymers 0.000 description 30
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 15
- 230000004888 barrier function Effects 0.000 description 9
- 238000005520 cutting process Methods 0.000 description 9
- 229920003986 novolac Polymers 0.000 description 9
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 8
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 8
- -1 for example Polymers 0.000 description 8
- 238000010030 laminating Methods 0.000 description 8
- 239000010410 layer Substances 0.000 description 8
- 239000000203 mixture Substances 0.000 description 8
- 229920001187 thermosetting polymer Polymers 0.000 description 7
- 239000002966 varnish Substances 0.000 description 7
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 6
- 239000003795 chemical substances by application Substances 0.000 description 6
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 238000011156 evaluation Methods 0.000 description 6
- 239000000945 filler Substances 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 229920000800 acrylic rubber Polymers 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 229910002026 crystalline silica Inorganic materials 0.000 description 5
- 125000003700 epoxy group Chemical group 0.000 description 5
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 5
- 229920000058 polyacrylate Polymers 0.000 description 5
- 235000012239 silicon dioxide Nutrition 0.000 description 5
- 238000011282 treatment Methods 0.000 description 5
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 4
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 4
- 239000004593 Epoxy Substances 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 229930003836 cresol Natural products 0.000 description 4
- 238000001035 drying Methods 0.000 description 4
- 239000000178 monomer Substances 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- VPWNQTHUCYMVMZ-UHFFFAOYSA-N 4,4'-sulfonyldiphenol Chemical compound C1=CC(O)=CC=C1S(=O)(=O)C1=CC=C(O)C=C1 VPWNQTHUCYMVMZ-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 229920006243 acrylic copolymer Polymers 0.000 description 3
- 239000012298 atmosphere Substances 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000005227 gel permeation chromatography Methods 0.000 description 3
- VOZRXNHHFUQHIL-UHFFFAOYSA-N glycidyl methacrylate Chemical compound CC(=C)C(=O)OCC1CO1 VOZRXNHHFUQHIL-UHFFFAOYSA-N 0.000 description 3
- 230000005484 gravity Effects 0.000 description 3
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 3
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- 239000005011 phenolic resin Substances 0.000 description 3
- 239000002985 plastic film Substances 0.000 description 3
- 229920006255 plastic film Polymers 0.000 description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 description 3
- 239000005020 polyethylene terephthalate Substances 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- NLHHRLWOUZZQLW-UHFFFAOYSA-N Acrylonitrile Chemical compound C=CC#N NLHHRLWOUZZQLW-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 2
- 229920002799 BoPET Polymers 0.000 description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 2
- 239000004793 Polystyrene Substances 0.000 description 2
- 239000006087 Silane Coupling Agent Substances 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 2
- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Chemical compound FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 description 2
- 229910000019 calcium carbonate Inorganic materials 0.000 description 2
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 2
- 239000000292 calcium oxide Substances 0.000 description 2
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 2
- 239000000378 calcium silicate Substances 0.000 description 2
- 229910052918 calcium silicate Inorganic materials 0.000 description 2
- OYACROKNLOSFPA-UHFFFAOYSA-N calcium;dioxido(oxo)silane Chemical compound [Ca+2].[O-][Si]([O-])=O OYACROKNLOSFPA-UHFFFAOYSA-N 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229920001577 copolymer Polymers 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 239000007822 coupling agent Substances 0.000 description 2
- 238000009472 formulation Methods 0.000 description 2
- 125000000524 functional group Chemical group 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 239000010954 inorganic particle Substances 0.000 description 2
- 238000004898 kneading Methods 0.000 description 2
- ZLNQQNXFFQJAID-UHFFFAOYSA-L magnesium carbonate Chemical compound [Mg+2].[O-]C([O-])=O ZLNQQNXFFQJAID-UHFFFAOYSA-L 0.000 description 2
- 239000001095 magnesium carbonate Substances 0.000 description 2
- 229910000021 magnesium carbonate Inorganic materials 0.000 description 2
- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical compound [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 description 2
- 239000000347 magnesium hydroxide Substances 0.000 description 2
- 229910001862 magnesium hydroxide Inorganic materials 0.000 description 2
- HCWCAKKEBCNQJP-UHFFFAOYSA-N magnesium orthosilicate Chemical compound [Mg+2].[Mg+2].[O-][Si]([O-])([O-])[O-] HCWCAKKEBCNQJP-UHFFFAOYSA-N 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- 239000000391 magnesium silicate Substances 0.000 description 2
- 229910052919 magnesium silicate Inorganic materials 0.000 description 2
- 235000019792 magnesium silicate Nutrition 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- RPQRDASANLAFCM-UHFFFAOYSA-N oxiran-2-ylmethyl prop-2-enoate Chemical compound C=CC(=O)OCC1CO1 RPQRDASANLAFCM-UHFFFAOYSA-N 0.000 description 2
- 239000004014 plasticizer Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229920001955 polyphenylene ether Polymers 0.000 description 2
- 229920002223 polystyrene Polymers 0.000 description 2
- 238000004080 punching Methods 0.000 description 2
- 239000011342 resin composition Substances 0.000 description 2
- 238000010079 rubber tapping Methods 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- 229920003067 (meth)acrylic acid ester copolymer Polymers 0.000 description 1
- BVYPJEBKDLFIDL-UHFFFAOYSA-N 3-(2-phenylimidazol-1-yl)propanenitrile Chemical compound N#CCCN1C=CN=C1C1=CC=CC=C1 BVYPJEBKDLFIDL-UHFFFAOYSA-N 0.000 description 1
- 229910002012 Aerosil® Inorganic materials 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910015900 BF3 Inorganic materials 0.000 description 1
- 229930185605 Bisphenol Natural products 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- JIGUQPWFLRLWPJ-UHFFFAOYSA-N Ethyl acrylate Chemical compound CCOC(=O)C=C JIGUQPWFLRLWPJ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 1
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004697 Polyetherimide Substances 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 241000135309 Processus Species 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 150000008065 acid anhydrides Chemical class 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 230000001476 alcoholic effect Effects 0.000 description 1
- 125000002723 alicyclic group Chemical group 0.000 description 1
- OJMOMXZKOWKUTA-UHFFFAOYSA-N aluminum;borate Chemical compound [Al+3].[O-]B([O-])[O-] OJMOMXZKOWKUTA-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 229910000410 antimony oxide Inorganic materials 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 230000001588 bifunctional effect Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- CQEYYJKEWSMYFG-UHFFFAOYSA-N butyl acrylate Chemical compound CCCCOC(=O)C=C CQEYYJKEWSMYFG-UHFFFAOYSA-N 0.000 description 1
- 238000011088 calibration curve Methods 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- BGTFCAQCKWKTRL-YDEUACAXSA-N chembl1095986 Chemical compound C1[C@@H](N)[C@@H](O)[C@H](C)O[C@H]1O[C@@H]([C@H]1C(N[C@H](C2=CC(O)=CC(O[C@@H]3[C@H]([C@@H](O)[C@H](O)[C@@H](CO)O3)O)=C2C=2C(O)=CC=C(C=2)[C@@H](NC(=O)[C@@H]2NC(=O)[C@@H]3C=4C=C(C(=C(O)C=4)C)OC=4C(O)=CC=C(C=4)[C@@H](N)C(=O)N[C@@H](C(=O)N3)[C@H](O)C=3C=CC(O4)=CC=3)C(=O)N1)C(O)=O)=O)C(C=C1)=CC=C1OC1=C(O[C@@H]3[C@H]([C@H](O)[C@@H](O)[C@H](CO[C@@H]5[C@H]([C@@H](O)[C@H](O)[C@@H](C)O5)O)O3)O[C@@H]3[C@H]([C@@H](O)[C@H](O)[C@@H](CO)O3)O[C@@H]3[C@H]([C@H](O)[C@@H](CO)O3)O)C4=CC2=C1 BGTFCAQCKWKTRL-YDEUACAXSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 238000003851 corona treatment Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 238000001739 density measurement Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- BXKDSDJJOVIHMX-UHFFFAOYSA-N edrophonium chloride Chemical compound [Cl-].CC[N+](C)(C)C1=CC=CC(O)=C1 BXKDSDJJOVIHMX-UHFFFAOYSA-N 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 125000000623 heterocyclic group Chemical group 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000005453 ketone based solvent Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004850 liquid epoxy resins (LERs) Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- AFEQENGXSMURHA-UHFFFAOYSA-N oxiran-2-ylmethanamine Chemical compound NCC1CO1 AFEQENGXSMURHA-UHFFFAOYSA-N 0.000 description 1
- VTRUBDSFZJNXHI-UHFFFAOYSA-N oxoantimony Chemical compound [Sb]=O VTRUBDSFZJNXHI-UHFFFAOYSA-N 0.000 description 1
- PNJWIWWMYCMZRO-UHFFFAOYSA-N pent‐4‐en‐2‐one Natural products CC(=O)CC=C PNJWIWWMYCMZRO-UHFFFAOYSA-N 0.000 description 1
- 239000013034 phenoxy resin Substances 0.000 description 1
- 229920006287 phenoxy resin Polymers 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920001601 polyetherimide Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 230000000379 polymerizing effect Effects 0.000 description 1
- 229920000306 polymethylpentene Polymers 0.000 description 1
- 239000011116 polymethylpentene Substances 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 239000005077 polysulfide Substances 0.000 description 1
- 229920001021 polysulfide Polymers 0.000 description 1
- 150000008117 polysulfides Polymers 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 239000002987 primer (paints) Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000000518 rheometry Methods 0.000 description 1
- 239000005060 rubber Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- 230000009974 thixotropic effect Effects 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
Landscapes
- Adhesive Tapes (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Die Bonding (AREA)
Abstract
Description
本発明は、接着シート、半導体装置及び半導体装置の製造方法に関する。 The present invention relates to an adhesive sheet, a semiconductor device, and a method for manufacturing a semiconductor device.
近年、半導体パッケージの小型化に伴い、半導体チップと同等サイズであるＣＳＰ（Ｃｈｉｐ Ｓｉｚｅ Ｐａｃｋａｇｅ）さらに、半導体チップを多段に積層したスタックドＣＳＰが普及している（例えば、特許文献１〜５参照）。 In recent years, with the miniaturization of semiconductor packages, CSP (Chip Size Package), which is the same size as a semiconductor chip, and stacked CSP in which semiconductor chips are stacked in multiple stages have become widespread (see, for example, Patent Documents 1 to 5).
スタックドＣＳＰの例として、図２に示す同サイズの半導体チップＡ１を２つ以上使用するパッケージであって、ワイヤ２などに起因する凹凸を有する半導体チップＡ１上にさらに別の半導体チップＡ１を積層するパッケージなどがある。このようなパッケージには、凹凸を埋込み、かつ上部の半導体チップとの絶縁性を確保することが可能な接着シートが求められている。図２中、ｂ１は接着剤である。
As an example of a stacked CSP, a package using two or more semiconductor chips A1 of the same size shown in FIG. 2, and another semiconductor chip A1 is stacked on the semiconductor chip A1 having unevenness caused by the
配線、ワイヤ等の凹凸の充てんには、通常、凹凸の高さより接着シート厚さを厚くすること、接着シートの溶融粘度を低減し、充てん性を改善することが求められる。しかしながら、一方で、厚さが厚く、溶融粘度が低い接着シートは、ウエハ及び接着シートのダイシングによって、得られる半導体チップ端部の破損が大きくなる、糸状のくず（樹脂ばり）が大きくなるという問題があった。 For filling irregularities such as wiring and wires, it is usually required to increase the thickness of the adhesive sheet from the height of the irregularities, to reduce the melt viscosity of the adhesive sheet, and to improve the filling property. However, on the other hand, the adhesive sheet having a large thickness and a low melt viscosity has a problem that the end of the obtained semiconductor chip is greatly damaged due to dicing of the wafer and the adhesive sheet, and the thread-like waste (resin flash) becomes large. was there.
すなわち、通常、ダイシング工程は、ウエハ、接着シート、及びダイシングテープを０℃〜８０℃で貼り合わせた後、これらを回転刃で同時に切断し、洗浄後、接着剤付き半導体チップを得る工程が取られている。この切断後にできたダイシングテープの溝に、接着シートやウエハの切断くずが付着し、それが切断後の洗浄時や半導体チップピックアップ時にダイシングテープから剥離し、糸状のくず（樹脂ばり）が生じ、半導体チップに付着し、電極などを汚染することがあった。 That is, the dicing process usually includes a process of bonding a wafer, an adhesive sheet, and a dicing tape at 0 ° C. to 80 ° C., then simultaneously cutting them with a rotary blade, washing, and obtaining a semiconductor chip with an adhesive. It has been. Adhesive sheet or wafer cutting debris adheres to the groove of the dicing tape formed after this cutting, and it peels off from the dicing tape at the time of cleaning or semiconductor chip pick-up after cutting, resulting in thread-like debris (resin flash), There was a case where it adhered to the semiconductor chip and contaminated the electrodes.
また、凹凸の充てん時に凸部が上部の半導体チップと接触し又は近接しすぎ、絶縁不良を起こすことがあった。これは凸部の高さが高い場合、貼り合わせ圧力が高い場合に顕著であった。特に、凹凸として、アスペクト比が大きい突起または中空配線などに起因する凹凸を充てんした場合、絶縁不良がおきやすかった。 In addition, when the projections and depressions are filled, the projections may be in contact with or too close to the upper semiconductor chip, resulting in poor insulation. This was remarkable when the height of the convex portion was high and when the bonding pressure was high. In particular, when irregularities caused by protrusions having a high aspect ratio or hollow wiring are filled as irregularities, insulation failure is likely to occur.
本発明は、ダイシング性が優れ、かつ配線やワイヤ等に起因する凹凸の充てん性が優れ、また凹凸の充てん時に凸部が上部の半導体チップと接触せず、絶縁性に優れる、さらには耐熱性や耐湿性を満足する接着シート、並びにこれを用いた半導体装置及び半導体装置の製造方法を提供するものである。 The present invention has excellent dicing properties, excellent filling of unevenness due to wiring, wires, etc., and the protrusion does not come into contact with the upper semiconductor chip when filling up the unevenness, and has excellent insulation, and heat resistance And an adhesive sheet satisfying moisture resistance, a semiconductor device using the same, and a method of manufacturing the semiconductor device are provided.
本発明の発明者らは、下記の特定の組成を有する接着シートを使用することにより、ダイシング時に樹脂ばりの発生を防ぐことができ、かつ、基板の配線や、半導体チップのワイヤ等に起因する凹凸を充てん（接着シート中に凸部を埋め込む又は接着シートで凹部を充填する）でき、また凸部が上部チップに接触しないため、絶縁性にも優れることを見出した。 By using an adhesive sheet having the following specific composition, the inventors of the present invention can prevent the occurrence of resin flash during dicing, and are caused by wiring of a substrate, wires of a semiconductor chip, and the like. It was found that the projections and depressions could be filled (the projections were embedded in the adhesive sheet or the depressions were filled with the adhesive sheet), and the projections did not contact the upper chip, so that the insulation was excellent.
すなわち、本発明は、１００℃における溶融粘度が１×１０４Ｐａ・ｓ〜１×１０８Ｐａ・ｓである樹脂７０〜９５体積％、嵩密度／真密度が０．２〜０．７である平均粒径０．１〜５μｍの粒子５〜３０体積％、及び嵩密度／真密度が０．２未満である平均粒径０．１μｍ未満の粒子０〜５体積％を含むことを特徴とする接着シートに関する。
また、本発明は、第１の接着剤層及び第２の接着剤層が直接的に又は間接的に積層された構造を有してなる多層接着シートであって、少なくとも第１の接着剤層が前記接着シートからなり、第１の接着剤層のフロー量Ａμｍ、厚さａμｍ、第２の接着剤層のフロー量Ｂμｍ、厚さｂμｍとが、Ａ×３＜Ｂかつａ×２＜ｂの関係を有する多層接着シートに関する。
また、本発明は、ウエハ、接着シート及びダイシングテープを０℃〜８０℃で貼り合わせ、回転刃でウエハ、接着シート及びダンシングテープを同時に切断し、接着剤付き半導体チップを得た後、当該接着剤付き半導体チップを凹凸を有する基板又は半導体チップに荷重０．００１〜１ＭＰａで接着し、接着剤で凹凸を充てんする工程に使用する前記接着シートに関する。
また、本発明は、ウエハ、接着シート及びダイシングテープを貼り合せた際に、ウエハに接する側が第１の接着剤層であり、ダイシングテープに接する側が第２の接着剤層である前記接着シートに関する。
また、本発明は、ウエハ、前記接着シート及びダイシングテープを０℃〜８０℃で貼り合わせ、回転刃でウエハ、接着シート及びダンシングテープを同時に切断し、接着剤付き半導体チップを得た後、当該接着剤付き半導体チップを凹凸を有する基板又は半導体チップに荷重０．００１〜１ＭＰａで接着し、接着剤で凹凸を充てんする工程を含む半導体装置の製造方法に関する。
また、本発明は、接着剤付き半導体チップを、凹凸を有する基板又は半導体チップに接着する際に、凹凸を加熱する前記半導体装置の製造方法に関する。
また、本発明は、凹凸を形成する凸部の高さ／幅が１以上である前記半導体装置の製造方法に関する。
また、本発明は、前記接着シートを用いて半導体チップと基板、又は半導体チップと半導体チップとを接着してなる半導体装置に関する。
That is, in the present invention, a resin having a melt viscosity at 100 ° C. of 1 × 10 4 Pa · s to 1 × 10 8 Pa · s is 70 to 95% by volume, and a bulk density / true density is 0.2 to 0.7. It includes 5 to 30% by volume of particles having an average particle size of 0.1 to 5 μm, and 0 to 5% by volume of particles having an average particle size of less than 0.1 μm whose bulk density / true density is less than 0.2. The present invention relates to an adhesive sheet.
The present invention also provides a multilayer adhesive sheet having a structure in which a first adhesive layer and a second adhesive layer are laminated directly or indirectly, and at least the first adhesive layer Is made of the adhesive sheet, and the first adhesive layer flow amount A μm, the thickness a μm, the second adhesive layer flow amount B μm, and the thickness b μm are A × 3 <B and a × 2 <b. It is related with the multilayer adhesive sheet which has the relationship of these.
The present invention also includes bonding a wafer, an adhesive sheet, and a dicing tape at 0 ° C. to 80 ° C., simultaneously cutting the wafer, the adhesive sheet, and the dancing tape with a rotary blade to obtain a semiconductor chip with an adhesive, and then bonding the wafer It is related with the said adhesive sheet used for the process which adhere | attaches the semiconductor chip with an agent on the board | substrate or semiconductor chip which has an unevenness | corrugation by load 0.001-1MPa, and is filled with an unevenness with an adhesive agent.
The present invention also relates to the adhesive sheet, wherein when the wafer, the adhesive sheet and the dicing tape are bonded together, the side in contact with the wafer is the first adhesive layer and the side in contact with the dicing tape is the second adhesive layer. .
Further, the present invention is to bond the wafer, the adhesive sheet and the dicing tape at 0 ° C. to 80 ° C., and simultaneously cut the wafer, the adhesive sheet and the dancing tape with a rotary blade to obtain a semiconductor chip with an adhesive, The present invention relates to a method for manufacturing a semiconductor device including a step of adhering a semiconductor chip with an adhesive to a substrate having unevenness or a semiconductor chip under a load of 0.001 to 1 MPa and filling the unevenness with an adhesive.
The present invention also relates to a method for manufacturing the semiconductor device, in which the unevenness is heated when the adhesive-attached semiconductor chip is bonded to the uneven substrate or the semiconductor chip.
The present invention also relates to a method for manufacturing the semiconductor device, wherein the height / width of the convex portions forming the irregularities is 1 or more.
The present invention also relates to a semiconductor device formed by bonding a semiconductor chip and a substrate or a semiconductor chip and a semiconductor chip using the adhesive sheet.
本発明の接着シートは、ダイシング性に優れ、かつ配線やワイヤ等に起因する凹凸の充てん性に優れ、また凹凸の充てん時に凸部が上部の半導体チップと接触せず、絶縁性に優れ、さらには耐熱性や耐湿性に優れた接着シートである。また、本発明の半導体装置の製造方法は、ダイシング性に優れ、樹脂ばりの発生が少なく、かつ配線やワイヤ等に起因する凹凸の充てん性に優れた製造方法である。さらに、本発明の半導体装置は、絶縁性、さらには耐熱性や耐湿性に優れた半導体装置である。 The adhesive sheet of the present invention has excellent dicing properties and excellent filling of unevenness due to wiring, wires, etc., and the protrusion does not contact the upper semiconductor chip when filling up the unevenness, and is excellent in insulation, Is an adhesive sheet excellent in heat resistance and moisture resistance. In addition, the semiconductor device manufacturing method of the present invention is a manufacturing method that excels in dicing properties, generates less resin burrs, and excels in filling irregularities caused by wiring, wires, and the like. Furthermore, the semiconductor device of the present invention is a semiconductor device that is excellent in insulation, heat resistance, and moisture resistance.
本発明の接着シートには、１００℃における溶融粘度が１×１０４Ｐａ・ｓ〜１×１０８Ｐａ・ｓの樹脂を使用する。１×１０４Ｐａ・ｓ未満では、流動性が高く、基板の凹凸が容易に貫通するため、絶縁性、バリア性が不足する。１×１０８Ｐａ・ｓを超える場合、ぬれ性が低下し、耐リフロー性が悪化する。樹脂は接着シート中に７０〜９５体積％含まれ、好ましくは７０〜８８体積％含まれる。 For the adhesive sheet of the present invention, a resin having a melt viscosity at 100 ° C. of 1 × 10 4 Pa · s to 1 × 10 8 Pa · s is used. If it is less than 1 × 10 4 Pa · s, the fluidity is high and the unevenness of the substrate penetrates easily, so that the insulation and barrier properties are insufficient. When it exceeds 1 × 10 8 Pa · s, the wettability is lowered and the reflow resistance is deteriorated. The resin is contained in the adhesive sheet in an amount of 70 to 95% by volume, preferably 70 to 88% by volume.
なお、樹脂の溶融粘度は、下記の平行平板プラストメータ法により測定、算出した値を用いた。
すなわち、樹脂を厚さ１００〜３００μｍの形状に成形する。これを直径１１．３ｍｍの円形に打ち抜いたものを試料とし、１００℃において、荷重３．０ｋｇｆで５秒間加圧し、加圧前後の試料の厚みから、次式より溶融粘度を算出した。
The melt viscosity of the resin was a value measured and calculated by the following parallel plate plastometer method.
That is, the resin is molded into a shape having a thickness of 100 to 300 μm. This was punched into a circle with a diameter of 11.3 mm, and the sample was pressed at 100 ° C. with a load of 3.0 kgf for 5 seconds, and the melt viscosity was calculated from the following equation from the thickness of the sample before and after pressing.
また、本発明の接着シートは、嵩密度／真密度が０．２〜０．７である平均粒径０．１〜５μｍの粒子（ｉ）を５〜３０体積％、嵩密度／真密度が０．２未満である平均粒径０．１μｍ未満の粒子（ii）を０〜５体積％以下含有する。本発明の接着シートに使用する粒子は、嵩密度Ｄｇ／ｃｍ３、真密度Ｅｇ／ｃｍ３の場合、好ましい粒子の嵩密度Ｄｇ／ｃｍ３の範囲は真密度に依存するため、Ｄ／Ｅの範囲で規定されることが好ましい。 The adhesive sheet of the present invention has a bulk density / true density of 5-30% by volume of particles (i) having an average particle size of 0.1-5 μm with a bulk density / true density of 0.2-0.7, and a bulk density / true density. It contains 0 to 5% by volume or less of particles (ii) having an average particle size of less than 0.2 and less than 0.2 μm. When the particle used in the adhesive sheet of the present invention has a bulk density of Dg / cm 3 and a true density of Eg / cm 3 , the range of the preferred particle bulk density Dg / cm 3 depends on the true density. It is preferable to be defined by a range.
接着シートに使用する粒子（ｉ）のＤ／Ｅは０．２〜０．７であり、好ましくはＤ／Ｅは０．３〜０．５である。Ｄ／Ｅ＞０．７の場合、バリア性が不足する。Ｄ／Ｅ＜０．２の場合、流動性、ぬれ性が低下し、耐リフロー性が悪化する。 The D / E of the particles (i) used for the adhesive sheet is 0.2 to 0.7, preferably D / E is 0.3 to 0.5. When D / E> 0.7, the barrier property is insufficient. In the case of D / E <0.2, fluidity and wettability are lowered, and reflow resistance is deteriorated.
粒子（ｉ）の平均粒径は０．１〜５μｍであり、好ましくは０．３〜３μｍ、より好ましくは０．３〜１μｍである。粒子の平均粒径は、流動性が優れる点で０．１μｍ以上である。また、５μｍを超える場合、接着シートの薄膜化が困難となり、接着シート表面の平滑性を保つことが難しくなる。 The average particle diameter of particle | grains (i) is 0.1-5 micrometers, Preferably it is 0.3-3 micrometers, More preferably, it is 0.3-1 micrometer. The average particle diameter of the particles is 0.1 μm or more in terms of excellent fluidity. On the other hand, when the thickness exceeds 5 μm, it is difficult to reduce the thickness of the adhesive sheet, and it becomes difficult to maintain the smoothness of the surface of the adhesive sheet.
また、粒子の充てん量（Ｃｖｏｌ％）は、接着シートの体積に対し、５〜３０体積％であり、好ましくは１２〜３０体積％である。５体積％未満では、流動性が高く、基板の凹凸が容易に貫通するため、絶縁性、バリア性が不足する。３０体積％を超える場合、ぬれ性が低下し、耐リフロー性が悪化する。 Moreover, the filling amount (Cvol%) of particle | grains is 5-30 volume% with respect to the volume of an adhesive sheet, Preferably it is 12-30 volume%. If it is less than 5% by volume, the fluidity is high and the unevenness of the substrate penetrates easily, so that the insulation and barrier properties are insufficient. When it exceeds 30 volume%, wettability falls and reflow resistance deteriorates.
特に（Ｄ／Ｅ）×８０≧Ｃ≧（Ｄ／Ｅ）×２０の範囲にあることが好ましく、（Ｄ／Ｅ）×８０＜Ｃの場合、樹脂の流動性が低く、低温でのラミネート性が不良となりやすく、Ｃ＜（Ｄ／Ｅ）×２０の場合、粒子が流動しやすいためバリア性が不足しやすい。 In particular, (D / E) × 80 ≧ C ≧ (D / E) × 20 is preferable, and in the case of (D / E) × 80 <C, the resin has low fluidity and can be laminated at low temperature. When C <(D / E) × 20, the particles tend to flow and the barrier property tends to be insufficient.
本発明においては、耐熱性を向上するなどの目的でＤ／Ｅが０．２未満である平均粒径０．１μｍ未満の粒子（ii）を５体積％以下、すなわち、０〜５体積％含有しても良い。充てん量が５体積％を超える場合、ぬれ性が低下し、耐リフロー性が悪化する。好ましくは３〜５体積％である。平均粒径は、好ましくは０．０１μｍ以上０．１μｍ未満である。０．０１μｍ未満であると粘度が大幅に上昇する傾向がある。 In the present invention, particles (ii) having an average particle diameter of less than 0.1 μm having a D / E of less than 0.2 for the purpose of improving heat resistance and the like are contained in an amount of 5% by volume or less, that is, 0 to 5% by volume. You may do it. When filling amount exceeds 5 volume%, wettability falls and reflow resistance deteriorates. Preferably it is 3-5 volume%. The average particle size is preferably 0.01 μm or more and less than 0.1 μm. If it is less than 0.01 μm, the viscosity tends to increase significantly.
嵩密度は川北式タップ密度測定法にてタップ嵩密度として測定することができる。具体的には、体積既知の容器に粉体を一定方法で充填し、上下に容器を振動させるタッピングを１００回行い、その後の粒子間の空隙も含めた体積で、粉体の質量を除した値である。 The bulk density can be measured as a tap bulk density by the Kawakita-type tap density measurement method. Specifically, the powder is filled into a container with a known volume by a certain method, and tapping for vibrating the container up and down is performed 100 times, and the mass of the powder is divided by the volume including the voids between the particles thereafter. Value.
なお、本発明においては、レーザー回折式粒度分布測定装置（日機装製マイクロトラック）を用いて粒子の平均粒径を測定した。具体的には、粒子０．１〜１．０ｇを秤取り、超音波により分散した後、粒度分布を測定し、その分布での累積重量が５０％となる粒子径を平均粒径とした。 In the present invention, the average particle size of the particles was measured using a laser diffraction particle size distribution measuring device (Nikkiso Microtrack). Specifically, 0.1 to 1.0 g of particles were weighed and dispersed by ultrasonic waves, then the particle size distribution was measured, and the particle diameter at which the cumulative weight in the distribution was 50% was taken as the average particle diameter.
なお、本発明の接着シートは、高さ／幅（アスペクト比）が１以上である突起又は中空配線などの凸部に起因する凹凸の充てんに使用する場合に、その充てん性、バリア性の効果が顕著に表れる。その効果は、アスペクト比が１．５以上の場合に特に顕著である。アスペクト比の上限は特に限定されないが、好ましくは１０以下である。アスペクト比が０．５以下の場合は、効果が少ない。突起としては、例えば、基板上に設けられた配線や端子が挙げられ、中空配線としては、例えば、半導体チップと基板上の端子を接続するワイヤが挙げられる。 In addition, when the adhesive sheet of the present invention is used for filling unevenness caused by protrusions such as protrusions or hollow wirings having a height / width (aspect ratio) of 1 or more, the effect of filling properties and barrier properties are obtained. Appears remarkably. The effect is particularly remarkable when the aspect ratio is 1.5 or more. The upper limit of the aspect ratio is not particularly limited, but is preferably 10 or less. When the aspect ratio is 0.5 or less, the effect is small. Examples of the protrusion include a wiring and a terminal provided on the substrate, and examples of the hollow wiring include a wire connecting the semiconductor chip and the terminal on the substrate.
従来、アスペクト比が大きい場合、より充てんが困難になるが、それを改善するために、溶融粘度を低減すると、接着シート端部の樹脂のはみだしが大きくなり、シート端部付近にある端子などを汚染するなどの問題が生じていた。また、凸部にかかる荷重が大きく、凸部がバリア層を突き抜けやすくなっていた。 Conventionally, when the aspect ratio is large, filling becomes more difficult, but in order to improve it, when the melt viscosity is reduced, the protrusion of the resin at the edge of the adhesive sheet increases, and the terminal near the edge of the sheet can be removed. There were problems such as contamination. Moreover, the load concerning a convex part was large and it became easy for the convex part to penetrate a barrier layer.
なお、高さ／幅は、基板又は半導体チップなどの表面からの凸部の最大高さ、及び、凸部の最大幅を測定して、計算することができる。凸部の最大高さが１０μｍ以上である場合、最大幅は、基板から１０μｍ以上高い部分における最大幅を測定する。図１に凸部の例を示す。 The height / width can be calculated by measuring the maximum height of the convex portion from the surface of the substrate or the semiconductor chip and the maximum width of the convex portion. When the maximum height of the convex portion is 10 μm or more, the maximum width is a maximum width measured at a portion higher than the substrate by 10 μm or more. FIG. 1 shows an example of the convex portion.
本発明の接着シートは、樹脂及び粒子を含む。樹脂としては、上述の条件を満たし、接着シートとして使用できるものであればよいが、好ましくは、架橋性官能基を含む重量平均分子量が１０万以上でＴｇが−５０〜５０℃である高分子量成分、及びエポキシ樹脂を主成分とする熱硬化性成分が用いられる。本発明の接着シートは、タック強度を有しシート状での取扱い性が良好であることから、樹脂及び粒子の他に、硬化促進剤、触媒、添加剤、カップリング剤等を含んでも良い。 The adhesive sheet of the present invention contains a resin and particles. The resin may be any resin as long as it satisfies the above-described conditions and can be used as an adhesive sheet. Preferably, the resin has a weight average molecular weight including a crosslinkable functional group of 100,000 or more and a Tg of −50 to 50 ° C. The component and the thermosetting component which has an epoxy resin as a main component are used. Since the adhesive sheet of the present invention has tack strength and is easy to handle in a sheet form, it may contain a curing accelerator, a catalyst, an additive, a coupling agent and the like in addition to the resin and the particles.
高分子量成分としてはエポキシ基、アルコール性又はフェノール性水酸基、カルボキシル基等の架橋性官能基を有するポリイミド樹脂、（メタ）アクリル樹脂、ウレタン樹脂、ポリフェニレンエーテル樹脂、ポリエーテルイミド樹脂、フェノキシ樹脂、変性ポリフェニレンエーテル樹脂等が挙げられるが、これらに限定されるものではない。 High molecular weight components include polyimide resins having crosslinkable functional groups such as epoxy groups, alcoholic or phenolic hydroxyl groups, carboxyl groups, (meth) acrylic resins, urethane resins, polyphenylene ether resins, polyetherimide resins, phenoxy resins, modified Examples include polyphenylene ether resin, but are not limited thereto.
高分子量成分として、例えば、グリシジルアクリレート又はグリシジルメタクリレートなどの官能性モノマを含有するモノマを重合して得た、重量平均分子量が１０万以上であるエポキシ基含有（メタ）アクリル共重合体などが好ましい。エポキシ基含有（メタ）アクリル共重合体としては、たとえば、（メタ）アクリル酸エステル共重合体、アクリルゴムなどを使用することができ、アクリルゴムがより好ましい。 As the high molecular weight component, for example, an epoxy group-containing (meth) acrylic copolymer having a weight average molecular weight of 100,000 or more obtained by polymerizing a monomer containing a functional monomer such as glycidyl acrylate or glycidyl methacrylate is preferable. . As the epoxy group-containing (meth) acrylic copolymer, for example, (meth) acrylic acid ester copolymer, acrylic rubber and the like can be used, and acrylic rubber is more preferable.
アクリルゴムは、アクリル酸エステルを主成分とし、主として、ブチルアクリレートとアクリロニトリルなどの共重合体や、エチルアクリレートとアクリロニトリルなどの共重合体などからなるゴムである。 Acrylic rubber is a rubber mainly composed of an acrylate ester and mainly composed of a copolymer such as butyl acrylate and acrylonitrile, a copolymer such as ethyl acrylate and acrylonitrile, or the like.
また、高分子量成分の重量平均分子量は、好ましくは１０万以上１００万以下であり、分子量が１０万未満であるとシートの耐熱性が低下する場合があり、分子量が１００万を超えるとシートのフローが低下する場合がある。なお、重量平均分子量は、ゲルパーミエーションクロマトグラフィー法（ＧＰＣ）で標準ポリスチレンによる検量線を用いたポリスチレン換算値である。 Further, the weight average molecular weight of the high molecular weight component is preferably 100,000 or more and 1,000,000 or less. If the molecular weight is less than 100,000, the heat resistance of the sheet may be lowered. If the molecular weight exceeds 1,000,000, The flow may decrease. In addition, a weight average molecular weight is a polystyrene conversion value using the calibration curve by a standard polystyrene by the gel permeation chromatography method (GPC).
ウエハダイシング時に接着シートが切断しやすく樹脂くずが発生し難い点、また耐熱性が高い点で、Ｔｇが−２０℃〜４０℃で重量平均分子量が１０万〜９０万の高分子量成分が好ましく、Ｔｇが−１０℃〜４０℃で分子量が２０万〜８５万の高分子量成分が好ましい。 A high molecular weight component having a Tg of −20 ° C. to 40 ° C. and a weight average molecular weight of 100,000 to 900,000 is preferable in that the adhesive sheet is easily cut during wafer dicing, and resin waste is not easily generated. High molecular weight components having a Tg of −10 ° C. to 40 ° C. and a molecular weight of 200,000 to 850,000 are preferred.
本発明において用いられる熱硬化性成分としては、半導体チップを実装する場合に要求される耐熱性および耐湿性を有するエポキシ樹脂が好ましい。なお、本発明において、「エポキシ樹脂を主成分とする熱硬化性成分」には、エポキシ樹脂硬化剤も含まれるものとする。 The thermosetting component used in the present invention is preferably an epoxy resin having heat resistance and moisture resistance required for mounting a semiconductor chip. In the present invention, the “thermosetting component mainly composed of epoxy resin” includes an epoxy resin curing agent.
エポキシ樹脂は、硬化して接着作用を有するものであれば特に限定されない。ビスフェノールＡ型エポキシ樹脂、ビスフェノールＦ型エポキシ樹脂、ビスフェノールＳ型エポキシ樹脂などの二官能エポキシ樹脂、フェノールノボラック型エポキシ樹脂やクレゾールノボラック型エポキシ樹脂などのノボラック型エポキシ樹脂などを使用することができる。 The epoxy resin is not particularly limited as long as it is cured and has an adhesive action. Bifunctional epoxy resins such as bisphenol A type epoxy resin, bisphenol F type epoxy resin, and bisphenol S type epoxy resin, novolac type epoxy resins such as phenol novolac type epoxy resin and cresol novolak type epoxy resin, and the like can be used.
また、多官能エポキシ樹脂、グリシジルアミン型エポキシ樹脂、複素環含有エポキシ樹脂または脂環式エポキシ樹脂など、一般に知られているものを適用することができる。 Moreover, what is generally known, such as a polyfunctional epoxy resin, a glycidyl amine type epoxy resin, a heterocyclic ring-containing epoxy resin, or an alicyclic epoxy resin, can be applied.
特にＢステージ状態でのフィルムの可撓性が高い点でエポキシ樹脂の分子量が１０００以下であることが好ましく、さらに好ましくは５００以下である。また、可撓性に優れる分子量５００以下のビスフェノールＡ型又はビスフェノールＦ型エポキシ樹脂５０〜９０重量部と、硬化物の耐熱性に優れる分子量が８００〜３０００の多官能エポキシ樹脂１０〜５０重量％とを併用することが好ましい。 In particular, the molecular weight of the epoxy resin is preferably 1000 or less, and more preferably 500 or less, in view of the high flexibility of the film in the B stage state. Further, 50 to 90 parts by weight of a bisphenol A type or bisphenol F type epoxy resin having a molecular weight of 500 or less excellent in flexibility, and 10 to 50% by weight of a polyfunctional epoxy resin having a molecular weight of 800 to 3000 excellent in heat resistance of the cured product It is preferable to use together.
エポキシ樹脂硬化剤としては、通常用いられている公知の硬化剤を使用することができ、例えば、アミン類、ポリアミド、酸無水物、ポリスルフィド、三フッ化ホウ素、ビスフェノールＡ、ビスフェノールＦ、ビスフェノールＳのようなフェノール性水酸基を１分子中に２個以上有するビスフェノール類、フェノールノボラック樹脂、ビスフェノールＡノボラック樹脂又はクレゾールノボラック樹脂等のフェノール樹脂などが挙げられる。 As the epoxy resin curing agent, known curing agents that are usually used can be used. For example, amines, polyamides, acid anhydrides, polysulfides, boron trifluoride, bisphenol A, bisphenol F, and bisphenol S can be used. Examples thereof include bisphenols having two or more such phenolic hydroxyl groups in one molecule, phenol resins such as phenol novolac resins, bisphenol A novolac resins, and cresol novolac resins.
上記の接着シートにおいて、高分子量成分の含有量は、樹脂中に好ましくは５０〜９０重量％さらに好ましくは６０〜８０重量％であり、より好ましくは６５〜７８重量％である。５０重量％未満であると流動性が高すぎるために基板の凸部が樹脂を貫通する場合があり、９０重量％を超えると耐熱性が不足する場合がある。エポキシ樹脂を主成分とする熱硬化性成分の含有量は、樹脂中に好ましくは１０〜５０重量％、さらに好ましくは２０〜４０重量％、より好ましくは２２〜３５重量％である。 In the above adhesive sheet, the content of the high molecular weight component is preferably 50 to 90% by weight, more preferably 60 to 80% by weight, and more preferably 65 to 78% by weight in the resin. If it is less than 50% by weight, the fluidity is too high, so that the convex portion of the substrate may penetrate the resin, and if it exceeds 90% by weight, the heat resistance may be insufficient. Content of the thermosetting component which has an epoxy resin as a main component becomes like this. Preferably it is 10 to 50 weight% in a resin, More preferably, it is 20 to 40 weight%, More preferably, it is 22 to 35 weight%.
さらに、本発明の接着シートに含まれる粒子は無機粒子が好ましく、水酸化アルミニウム、水酸化マグネシウム、炭酸カルシウム、炭酸マグネシウム、ケイ酸カルシウム、ケイ酸マグネシウム、酸化カルシウム、酸化マグネシウム、アルミナ、窒化アルミニウム、ほう酸アルミウイスカ、窒化ホウ素、結晶性シリカ、非晶性シリカ、アンチモン酸化物などが挙げられる。熱伝導性向上のためには、アルミナ、窒化アルミニウム、窒化ホウ素、結晶性シリカ、非晶性シリカ等が好ましい。溶融粘度の調整やチクソトロピック性の付与の目的には、水酸化アルミニウム、水酸化マグネシウム、炭酸カルシウム、炭酸マグネシウム、ケイ酸カルシウム、ケイ酸マグネシウム、酸化カルシウム、酸化マグネシウム、アルミナ、結晶性シリカ、非晶性シリカ等が好ましい。また、ダイシング性を向上させるためにはアルミナ、シリカが好ましい。 Furthermore, the particles contained in the adhesive sheet of the present invention are preferably inorganic particles, such as aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, alumina, aluminum nitride, Examples thereof include aluminum borate whisker, boron nitride, crystalline silica, amorphous silica, and antimony oxide. In order to improve thermal conductivity, alumina, aluminum nitride, boron nitride, crystalline silica, amorphous silica and the like are preferable. For the purpose of adjusting melt viscosity and imparting thixotropic properties, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, alumina, crystalline silica, non-crystalline silica Crystalline silica and the like are preferred. In order to improve dicing properties, alumina and silica are preferable.
本発明においては、粒子の比表面積に関しても、粒子の平均粒径と同様に、流動性と表面平滑性の点から２〜４００ｍ２／ｇが好ましく、さらに流動性の点から比表面積の上限は５０ｍ２／ｇがより好ましく、１０ｍ２／ｇが特に好ましい。 In the present invention, the specific surface area of the particles is preferably 2 to 400 m 2 / g from the viewpoints of fluidity and surface smoothness, as well as the average particle diameter of the particles. 50 m 2 / g is more preferable, and 10 m 2 / g is particularly preferable.
なお、本発明において、比表面積（ＢＥＴ比表面積）は、ブルナウアー・エメット・テーラー（Ｂｒｕｎａｕｅｒ−Ｅｍｍｅｔｔ−Ｔｅｌｌｅｒ）式により、無機粒子に窒素を吸着させてその表面積を測定した値であり、市販されているＢＥＴ装置により測定できる。 In the present invention, the specific surface area (BET specific surface area) is a value obtained by adsorbing nitrogen to inorganic particles according to Brunauer-Emmett-Teller formula and measuring the surface area, and is commercially available. It can be measured with a BET device.
本発明の接着シートは、例えば、前記高分子量成分、エポキシ樹脂を主成分とする熱硬化性成分、粒子及び他の成分を有機溶媒中で混合、混練してワニスを調製した後、基材フィルム上に上記ワニスの層を形成させ、加熱乾燥した後、基材を除去して得ることができる。上記の混合、混練は、通常の撹拌機、らいかい機、三本ロール、ボールミル等の分散機を適宜、組み合わせて行うことができる。上記の加熱乾燥の条件は、使用した溶媒が充分に揮散する条件であれば特に制限はないが、通常６０℃〜２００℃で、０．１〜９０分間加熱して行う。 The adhesive sheet of the present invention is prepared, for example, by preparing a varnish by mixing and kneading the high molecular weight component, a thermosetting component mainly composed of an epoxy resin, particles and other components in an organic solvent, and then preparing a varnish. After the above varnish layer is formed and dried by heating, the substrate can be removed. The above mixing and kneading can be carried out by appropriately combining dispersers such as a normal stirrer, a raking machine, a triple roll, and a ball mill. The heating and drying conditions are not particularly limited as long as the used solvent is sufficiently volatilized, but the heating is usually performed at 60 to 200 ° C. for 0.1 to 90 minutes.
上記接着シートの製造における上記ワニスの調製に用いる有機溶媒、即ち接着シート調製後の残存揮発分は、材料を均一に溶解、混練又は分散できるものであれば制限はなく、従来公知のものを使用することができる。このような溶剤としては、例えば、ジメチルホルムアミド、ジメチルアセトアミド、Ｎ−メチルピロリドン、アセトン、メチルエチルケトン、シクロヘキサノンなどのケトン系溶媒、トルエン、キシレン等が挙げられる。乾燥速度が速く、価格が安い点でメチルエチルケトン、シクロヘキサノンなどを使用することが好ましい。 The organic solvent used for the preparation of the varnish in the production of the adhesive sheet, that is, the residual volatile content after preparation of the adhesive sheet is not limited as long as the material can be uniformly dissolved, kneaded or dispersed, and a conventionally known one is used. can do. Examples of such a solvent include ketone solvents such as dimethylformamide, dimethylacetamide, N-methylpyrrolidone, acetone, methyl ethyl ketone, and cyclohexanone, toluene, xylene, and the like. It is preferable to use methyl ethyl ketone, cyclohexanone, etc. in terms of fast drying speed and low price.
有機溶媒の使用量は、接着シート調製後の残存揮発分が全重量基準で０．０１〜３重量％であれば特に制限はないが、耐熱信頼性の観点からは全重量基準で０．０１〜２重量％が好ましく、全重量基準で０．０１〜１．５重量％がさらに好ましい。 The amount of the organic solvent used is not particularly limited as long as the residual volatile content after preparation of the adhesive sheet is 0.01 to 3% by weight based on the total weight, but from the viewpoint of heat resistance reliability, 0.01% based on the total weight. ˜2% by weight is preferred, and 0.01 to 1.5% by weight based on the total weight is more preferred.
接着シートの膜厚は、基板の配線回路や下層の半導体チップに付設された金ワイヤ等の凹凸を充てん可能とするため、１０〜２５０μｍとする。１０μｍより薄いと応力緩和効果や接着性が乏しくなる傾向があり、２５０μｍより厚いと経済的でなくなる上に、半導体装置の小型化の要求に応えられない。なお、接着性が高く、また、半導体装置を薄型化できる点で２０〜１００μｍが好ましく、さらに好ましくは４０〜８０μｍである。 The film thickness of the adhesive sheet is set to 10 to 250 μm so as to be able to fill the unevenness such as the gold wire attached to the wiring circuit of the substrate and the semiconductor chip in the lower layer. If the thickness is less than 10 μm, the stress relaxation effect and adhesion tend to be poor. If the thickness is more than 250 μm, it is not economical, and the demand for miniaturization of the semiconductor device cannot be met. Note that the thickness is preferably 20 to 100 μm, more preferably 40 to 80 μm in terms of high adhesiveness and the ability to reduce the thickness of the semiconductor device.
本発明において、硬化前（Ｂステージ状態）の接着シートの２５℃における動的粘弾性測定による貯蔵弾性率が２００〜３，０００ＭＰａであると、ダイシング性が優れる点で好ましい。ダイシング性に優れ、かつウエハとの密着性が優れる点で５００〜２，０００ＭＰａがより好ましい。また、硬化前（Ｂステージ状態）の接着シートの８０℃における動的粘弾性測定による貯蔵弾性率が０．１〜１０ＭＰａであると、８０℃でウエハにラミネート可能である。特にウエハへの密着性が高い点で、０．５〜５ＭＰａであることがより好ましい。 In this invention, it is preferable at the point which is excellent in dicing property that the storage elastic modulus by the dynamic viscoelasticity measurement in 25 degreeC of the adhesive sheet before hardening (B stage state) is 200-3,000 MPa. 500 to 2,000 MPa is more preferable in terms of excellent dicing properties and excellent adhesion to the wafer. Further, when the storage elastic modulus of the adhesive sheet before curing (B stage state) measured by dynamic viscoelasticity at 80 ° C. is 0.1 to 10 MPa, it can be laminated on the wafer at 80 ° C. In particular, 0.5 to 5 MPa is more preferable in terms of high adhesion to the wafer.
本発明において、硬化後（Ｃステージ状態）の接着シートの１７０℃における動的粘弾性測定による貯蔵弾性率は、良好なワイヤボンディング性を得るために２０〜６００ＭＰａであることが好ましい。貯蔵弾性率は、より好ましくは４０〜６００ＭＰａ、さらに好ましくは４０〜４００ＭＰａである。 In this invention, it is preferable that the storage elastic modulus by the dynamic viscoelasticity measurement in 170 degreeC of the adhesive sheet after hardening (C stage state) is 20-600 MPa in order to obtain favorable wire bonding property. The storage elastic modulus is more preferably 40 to 600 MPa, and further preferably 40 to 400 MPa.
弾性率は、動的粘弾性測定装置（レオロジー社製、ＤＶＥ−Ｖ４）を用いて測定することができる（サンプルサイズ：長さ２０ｍｍ、幅４ｍｍ、温度範囲−３０〜２００℃、昇温速度５℃／ｍｉｎ、引張りモード、１０Ｈｚ、自動静荷重）。 The elastic modulus can be measured using a dynamic viscoelasticity measuring device (DVE-V4, manufactured by Rheology) (sample size: length 20 mm, width 4 mm, temperature range -30 to 200 ° C., heating rate 5). ° C / min, tensile mode, 10 Hz, automatic static load).
本発明の接着シートを多層構造を有する多層接着シートとして用いても良く、例えば、上述した接着シートを２枚以上ラミネートしたもの、本発明の接着シートとそれ以外の接着シートを複数ラミネートしたものとして用いても良い。 The adhesive sheet of the present invention may be used as a multilayer adhesive sheet having a multilayer structure. For example, it is assumed that two or more of the above-mentioned adhesive sheets are laminated, or a laminate of the adhesive sheet of the present invention and other adhesive sheets. It may be used.
例えば、第１の接着剤層及び第２の接着層剤が直接的又は間接的に積層された構造を有してなる多層接着シートであって、少なくとも第１の接着剤層が本発明の接着シートからなり、かつ、第１の接着剤層のフロー量Ａ、厚さａμｍと、第２の接着剤層のフロー量Ｂ、厚さｂμｍとが、Ａ×３＜Ｂかつａ×２＜ｂの関係を有する多層接着シートとして用いることができる。多層接着シートは、ウエハ、接着シート及びダイシングテープを貼り合せた際に、ウエハに接する側が第１の接着剤層であり、ダイシングテープに接する側が第２の接着剤層であることが好ましい。 For example, a multilayer adhesive sheet having a structure in which a first adhesive layer and a second adhesive layer agent are laminated directly or indirectly, wherein at least the first adhesive layer is the adhesive of the present invention. The flow rate A and thickness a μm of the first adhesive layer and the flow amount B and thickness b μm of the second adhesive layer are A × 3 <B and a × 2 <b. It can be used as a multilayer adhesive sheet having the relationship In the multilayer adhesive sheet, when the wafer, the adhesive sheet, and the dicing tape are bonded together, it is preferable that the side in contact with the wafer is the first adhesive layer and the side in contact with the dicing tape is the second adhesive layer.
このような２層シートにすることで、Ａ又はＢの絶対値に応じて、接着時に適宜圧力・温度・時間（中でも特に圧力）を選択することにより、第２層は凹凸を埋め込み、第１層は凹凸により突き破られないように接着することが可能である。つまり、配線やワイヤの充てん性と、配線やワイヤと上部半導体チップとの絶縁性を確保することができる。Ａ×３≧Ｂの場合、第１の接着剤層が配線やワイヤの侵入を妨げる効果が低く、凹凸を形成する基板上の回路やワイヤの上部に位置する半導体チップと接し、絶縁が確保されない傾向があり、またａ×２≧ｂの場合、凹凸やワイヤの充てん性が低下し、ボイドができやすくなる傾向がある。 By using such a two-layer sheet, the second layer is embedded with irregularities by appropriately selecting pressure, temperature, and time (particularly pressure) during bonding according to the absolute value of A or B. The layers can be bonded so that they are not pierced by irregularities. That is, it is possible to ensure the filling property of the wiring or wire and the insulation between the wiring or wire and the upper semiconductor chip. In the case of A × 3 ≧ B, the first adhesive layer has a low effect of preventing the intrusion of the wiring and the wire, is in contact with the circuit on the substrate on which the unevenness is formed and the semiconductor chip located on the upper part of the wire, and insulation is not secured. In the case of a × 2 ≧ b, there is a tendency that the unevenness and the filling property of the wire are lowered and voids are easily formed.
本発明において、フロー量は、硬化前の接着シートとＰＥＴフィルムを１×２ｃｍの短冊状に打ち抜いたサンプルについて、熱圧着試験装置（テスター産業（株）製）を用いて熱板温度１００℃、圧力１ＭＰａで１８秒間プレスした後、サンプルの端部からはみだした樹脂の長さを光学顕微鏡で測定して得ることができる。 In the present invention, the flow amount is set to a hot plate temperature of 100 ° C. using a thermocompression test apparatus (manufactured by Tester Sangyo Co., Ltd.) for a sample obtained by punching a 1 × 2 cm strip of an adhesive sheet and a PET film before curing. After pressing for 18 seconds at a pressure of 1 MPa, the length of the resin protruding from the end of the sample can be obtained by measuring with an optical microscope.
なお、Ａ、Ｂ、ａ、ｂはそれぞれ適当な範囲内にあることが好ましく、Ａは５０〜４００μｍ、Ｂは３００〜３０００μｍが好ましい。低すぎると充てん性が悪化し、大きすぎると半導体チップ端部からの樹脂の浸みだしが大きくなる傾向がある。またａは５〜３０μｍ、ｂは１０〜２５０μｍであることが好ましい。
第１の接着剤層としては、本発明の接着シートを使用することができる。第２の接着剤層としては、特願２００５−１２２４４７、特願２００４−３５１６０５、又は特願２００４−１２４１１８に記載の接着シートなどを用いることができる。
A, B, a, and b are each preferably within an appropriate range, and A is preferably 50 to 400 μm, and B is preferably 300 to 3000 μm. If it is too low, the filling property is deteriorated, and if it is too large, the resin oozes out from the end of the semiconductor chip tends to increase. Moreover, it is preferable that a is 5-30 micrometers and b is 10-250 micrometers.
As the first adhesive layer, the adhesive sheet of the present invention can be used. As the second adhesive layer, an adhesive sheet described in Japanese Patent Application No. 2005-122447, Japanese Patent Application No. 2004-351605, or Japanese Patent Application No. 2004-124118 can be used.
第２の接着剤層に用いられる接着シートは、好ましくは、架橋性官能基を含む重量平均分子量が１０万以上かつＴｇが−５０〜５０℃である高分子量成分１５〜４０重量％及びエポキシ樹脂を主成分とする熱硬化性成分６０〜８５重量％を含む樹脂１００重量部と、フィラー（粒子）４０〜１８０重量部とを含むことが好ましい。さらに、硬化促進剤、触媒、添加剤、カップリング剤等を含んでも良い。高分子量成分が樹脂の１５〜４０重量％含まれる場合に充てん性が良好となり、高分子量成分の含有量は、さらに好ましくは２０〜３７重量％であり、より好ましくは２５〜３５重量％である。フィラーを樹脂１００重量部に対して、４０〜１８０重量部含むことが、ダイシング性が向上する点、ワイヤボンディング性が良好となる点で好ましく、６０〜１６０重量部であることがより好ましく、６０〜１２０重量部であることがさらに好ましい。また、第２の接着剤層に用いられる接着シートの厚さは、１０〜２５０μｍであることが好ましい。高分子量成分、熱硬化性成分、及びフィラー（粒子）としては、上述の第１の接着剤層に用いられる接着シートと同様のものを用いることができる。 The adhesive sheet used for the second adhesive layer is preferably 15 to 40% by weight of a high molecular weight component having a weight average molecular weight of 100,000 or more and a Tg of −50 to 50 ° C. and an epoxy resin. It is preferable to contain 100 parts by weight of a resin containing 60 to 85% by weight of a thermosetting component containing as a main component and 40 to 180 parts by weight of fillers (particles). Furthermore, you may contain a hardening accelerator, a catalyst, an additive, a coupling agent, etc. When the high molecular weight component is contained in an amount of 15 to 40% by weight of the resin, the filling property is good, and the content of the high molecular weight component is more preferably 20 to 37% by weight, more preferably 25 to 35% by weight. . It is preferable that the filler is contained in an amount of 40 to 180 parts by weight with respect to 100 parts by weight of the resin in terms of improving the dicing property and improving the wire bonding property, and more preferably 60 to 160 parts by weight. More preferably, it is -120 weight part. Moreover, it is preferable that the thickness of the adhesive sheet used for a 2nd adhesive bond layer is 10-250 micrometers. As the high molecular weight component, the thermosetting component, and the filler (particle), the same adhesive sheet as that used for the first adhesive layer described above can be used.
本発明の接着シートは、それ自体で用いても構わないが、一実施態様として、本発明の接着シートを従来公知のダイシングテープ上に積層したダイシングテープ一体型接着シートとして用いることもできる。この場合、ウエハへのラミネート工程が一回で済む点で、作業の効率化が可能である。 The adhesive sheet of the present invention may be used by itself, but as an embodiment, it can also be used as a dicing tape-integrated adhesive sheet in which the adhesive sheet of the present invention is laminated on a conventionally known dicing tape. In this case, it is possible to increase the efficiency of the operation in that the laminating process on the wafer is performed only once.
本発明に使用するダイシングテープとしては、例えば、ポリテトラフルオロエチレンフィルム、ポリエチレンテレフタレートフィルム、ポリエチレンフィルム、ポリプロピレンフィルム、ポリメチルペンテンフィルム、ポリイミドフィルムなどのプラスチックフィルム等が挙げられる。 Examples of the dicing tape used in the present invention include plastic films such as a polytetrafluoroethylene film, a polyethylene terephthalate film, a polyethylene film, a polypropylene film, a polymethylpentene film, and a polyimide film.
また、必要に応じてプライマー塗布、ＵＶ処理、コロナ放電処理、研磨処理、エッチング処理等の表面処理を行っても良い。ダイシングテープは粘着性を有することが好ましく、上述のプラスチックフィルムに粘着性を付与したものを用いても良いし、上述のプラスチックフィルムの片面に粘着剤層を設けても良い。これは、樹脂組成物において特に液状成分の比率、高分子量成分のＴｇを調整することによって得られる適度なタック強度を有する樹脂組成物を塗布乾燥することで形成可能である。 Further, surface treatment such as primer coating, UV treatment, corona discharge treatment, polishing treatment and etching treatment may be performed as necessary. The dicing tape preferably has adhesiveness, and the above-mentioned plastic film provided with adhesiveness may be used, or an adhesive layer may be provided on one side of the above-mentioned plastic film. This can be formed by applying and drying a resin composition having an appropriate tack strength obtained by adjusting the ratio of the liquid component and the Tg of the high molecular weight component in the resin composition.
また、接着シートを半導体装置を製造する際に用いた場合、ダイシング時には半導体チップが飛散しない粘着力を有し、その後ピックアップ時にはダイシングテープから剥離することが望まれる。たとえば、接着シートの粘着性が高すぎるとピックアップが困難になることがある。そのため、適宜、接着シートのタック強度を調節することが好ましく、その方法としては、接着シートの室温におけるフローを上昇させることにより、粘着強度及びタック強度も上昇する傾向があり、フローを低下させれば粘着強度及びタック強度も低下する傾向があることを利用すればよい。 In addition, when the adhesive sheet is used when manufacturing a semiconductor device, it is desired that the semiconductor chip has an adhesive force that does not scatter during dicing, and then peels off from the dicing tape during pickup. For example, if the adhesive sheet is too sticky, picking up may be difficult. For this reason, it is preferable to appropriately adjust the tack strength of the adhesive sheet. As a method for this, the adhesive strength and tack strength tend to increase by increasing the flow of the adhesive sheet at room temperature, and the flow can be reduced. For example, it may be used that the adhesive strength and tack strength tend to decrease.
例えば、フローを上昇させる場合には、可塑剤の含有量の増加、粘着付与材含有量の増加等の方法がある。逆にフローを低下させる場合には、前記化合物の含有量を減らせばよい。前記可塑剤としては、例えば、単官能のアクリルモノマー、単官能エポキシ樹脂、液状エポキシ樹脂、アクリル系樹脂、エポキシ系のいわゆる希釈剤等が挙げられる。 For example, when increasing the flow, there are methods such as increasing the plasticizer content and increasing the tackifier content. Conversely, when the flow is lowered, the content of the compound may be reduced. Examples of the plasticizer include monofunctional acrylic monomers, monofunctional epoxy resins, liquid epoxy resins, acrylic resins, and epoxy-based so-called diluents.
ダイシングテープ上に接着シートを積層する方法としては、印刷のほか、予め作成した接着シートをダイシングテープ上にプレス、ホットロールラミネートする方法が挙げられるが、連続的に製造でき、効率が良い点でホットロールラミネートする方法が好ましい。 As a method of laminating the adhesive sheet on the dicing tape, in addition to printing, there is a method of pressing and hot roll laminating a pre-made adhesive sheet on the dicing tape, but it can be manufactured continuously and is efficient. A hot roll laminating method is preferred.
尚、ダイシングテープの膜厚は、特に制限はなく、接着シートの膜厚やダイシングテープ一体型接着シートの用途によって適宜、当業者の知識に基づいて定められるものであるが、経済性がよく、フィルムの取扱い性が良い点で６０〜１５０μｍ、好ましくは７０〜１３０μｍである。 In addition, the film thickness of the dicing tape is not particularly limited, and is appropriately determined based on the knowledge of a person skilled in the art depending on the film thickness of the adhesive sheet and the application of the dicing tape-integrated adhesive sheet. The film has a handleability of 60 to 150 μm, preferably 70 to 130 μm.
本発明の接着シートは、好ましくは半導体装置の製造に用いられ、より好ましくはウエハ、接着シート及びダイシングテープを０℃〜８０℃で貼り合わせた後、回転刃でウエハ、接着シート及びダイシングテープを同時に切断し、接着剤付き半導体チップを得た後、当該接着剤付き半導体チップを凹凸を有する基板又は半導体チップに荷重０．００１〜１ＭＰａで接着し、接着剤で凹凸を充てんする工程を含む半導体装置の製造に用いられる。 The adhesive sheet of the present invention is preferably used for the production of a semiconductor device, and more preferably, after bonding the wafer, the adhesive sheet and the dicing tape at 0 ° C. to 80 ° C., the wafer, the adhesive sheet and the dicing tape are attached with a rotary blade. A semiconductor including a step of cutting at the same time to obtain a semiconductor chip with an adhesive, and then bonding the semiconductor chip with an adhesive to a substrate or semiconductor chip having irregularities with a load of 0.001 to 1 MPa and filling the irregularities with an adhesive. Used in the manufacture of equipment.
本発明において、ウエハとしては、単結晶シリコンの他、多結晶シリコン、各種セラミック、ガリウム砒素などの化合物半導体などが使用される。 In the present invention, as the wafer, in addition to single crystal silicon, polycrystalline silicon, various ceramics, compound semiconductors such as gallium arsenide, and the like are used.
接着シートを単層で用いる場合には、ウエハに接着シートを貼り合わせた後、次いで接着シート面にダイシングテープを貼り合わせればよい。また接着シートを多層で用いる場合には、ウエハに第１の接着剤層、第２の接着剤層を順に貼り合わせてもよいし、予め第１の接着剤層及び第２の接着剤層を含む多層接着シートを作成しておき、当該多層接着シートをウエハに貼り合わせてもよい。 When the adhesive sheet is used as a single layer, after adhering the adhesive sheet to the wafer, a dicing tape may be attached to the adhesive sheet surface. When the adhesive sheet is used in multiple layers, the first adhesive layer and the second adhesive layer may be bonded to the wafer in this order, or the first adhesive layer and the second adhesive layer may be attached in advance. A multilayer adhesive sheet may be prepared, and the multilayer adhesive sheet may be bonded to the wafer.
また、本発明の接着シート又は多層接着シート、及びダイシングテープを備えるダイシングテープ一体型接着シートを用いることにより、半導体装置を製造することもできる。 Moreover, a semiconductor device can also be manufactured by using the adhesive sheet or multilayer adhesive sheet of this invention, and a dicing tape integrated adhesive sheet provided with a dicing tape.
接着シートをウエハに貼り付ける温度、即ちラミネート温度は、０〜８０℃であり、好ましくは１５〜８０℃であり、さらに好ましくは２０〜７０℃である。８０℃を超えると接着シート貼り付け後のウエハの反りが大きくなる傾向がある。
ダイシングテープ又はダイシングテープ一体型接着シートを貼り付ける際にも、上記温度で行うことが好ましい。
The temperature at which the adhesive sheet is attached to the wafer, that is, the laminating temperature, is 0 to 80 ° C., preferably 15 to 80 ° C., and more preferably 20 to 70 ° C. If it exceeds 80 ° C., the warpage of the wafer after adhering the adhesive sheet tends to increase.
It is preferable that the dicing tape or the dicing tape-integrated adhesive sheet is also applied at the above temperature.
図３に、本発明の一実施態様である接着シートｂ、半導体ウエハＡ、及びダンシングテープ１の断面図を示し、また、図４に、本発明の一実施態様である多層接着シートｃ、半導体ウエハＡ、及びダイシングテープ１の断面図を示す。図４中、ｂ’は第１の接着剤層、ａは第２の接着剤層を示す。 FIG. 3 shows a cross-sectional view of the adhesive sheet b, the semiconductor wafer A, and the dancing tape 1 according to one embodiment of the present invention, and FIG. 4 shows the multilayer adhesive sheet c and semiconductor according to one embodiment of the present invention. Sectional drawing of the wafer A and the dicing tape 1 is shown. In FIG. 4, b 'represents the first adhesive layer, and a represents the second adhesive layer.
次いで、接着シート、ダイシングテープが貼り付けられた半導体ウエハを、ダイシングカッターを用いてダイシング、さらに洗浄、乾燥することにより、接着剤付き半導体チップを得ることができる。 Next, the semiconductor wafer with the adhesive can be obtained by dicing, further washing and drying the semiconductor wafer to which the adhesive sheet and the dicing tape are attached using a dicing cutter.
さらに、他の実施態様として、本発明の接着シートは、それ自体がダイシングテープとしての役割を果たしても良い。このような接着シートは、ダイシングダイボンド一体型接着シートなどと呼ばれ、一つのシートでダイシングテープとしての役割と、接着シートとしての役割を果たす。 Furthermore, as another embodiment, the adhesive sheet of the present invention may itself serve as a dicing tape. Such an adhesive sheet is called a dicing die bond integrated adhesive sheet or the like, and one sheet serves as a dicing tape and serves as an adhesive sheet.
接着シートにこのような機能を持たせるには、例えば、接着シートが、光硬化性高分子量成分、光硬化性モノマ、光開始剤等の光硬化性成分を含んでいれば良い。 In order to give such a function to the adhesive sheet, for example, the adhesive sheet may contain a photocurable component such as a photocurable high molecular weight component, a photocurable monomer, or a photoinitiator.
ダイシングダイボンド一体型の接着シートは、好ましくはウエハ、接着シート及び基材フィルムを０℃〜８０℃で貼り合わせた後、回転刃でウエハ、接着シート及び基材フィルムを同時に切断し、接着剤付き半導体チップを得た後、当該接着剤付き半導体チップを凹凸を有する基板又は半導体チップに荷重０．００１〜１ＭＰａで接着し、接着剤で凹凸を充てんする工程を含む半導体装置の製造に用いられる。 The dicing die bond integrated adhesive sheet is preferably attached with a wafer, an adhesive sheet and a base film at 0 ° C. to 80 ° C., and then simultaneously cutting the wafer, the adhesive sheet and the base film with a rotary blade. After the semiconductor chip is obtained, the adhesive-attached semiconductor chip is bonded to a substrate having unevenness or a semiconductor chip with a load of 0.001 to 1 MPa, and used for manufacturing a semiconductor device including a step of filling the unevenness with an adhesive.
得られた接着剤付き半導体チップＡ１は、配線４に起因する凹凸を有する基板３又はワイヤ２に起因する凹凸を有する半導体チップに、接着剤ｂ１を介して荷重０．００１〜１ＭＰａで接着され、接着剤により凹凸が充てんされる（図５）。荷重は０．０１〜０．５ＭＰａであることが好ましく、０．０１〜０．３ＭＰａであることがより好ましい。荷重が０．００１ＭＰａ未満であるとボイドが発生し耐熱性が低下する傾向があり、１ＭＰａを超えると半導体チップが破損する傾向がある。
The obtained semiconductor chip A1 with adhesive is bonded to the
図５は、接着剤付き半導体チップをワイヤボンディングされた半導体チップに接着する際の工程の一例を示す概略図である。 FIG. 5 is a schematic diagram illustrating an example of a process for bonding a semiconductor chip with an adhesive to a wire-bonded semiconductor chip.
本発明においては、接着剤付き半導体チップを基板又は半導体チップに接着する際に、基板の配線、半導体チップのワイヤ等の凹凸を加熱することが好ましい。加熱温度は、６０〜２４０℃であることが好ましく、１００〜１８０℃であることがより好ましい。６０℃未満であると接着性が低下する傾向があり、２４０℃を超えると基板が変形し、反りが大きくなる傾向がある。加熱方法としては、基板又は半導体チップを予め加熱した熱板に接触させる、基板又は半導体チップに赤外線又はマイクロ波を照射する、熱風を吹きかける等の方法が挙げられる。 In the present invention, when the semiconductor chip with an adhesive is bonded to the substrate or the semiconductor chip, it is preferable to heat irregularities such as wiring on the substrate and wires of the semiconductor chip. The heating temperature is preferably 60 to 240 ° C, and more preferably 100 to 180 ° C. When the temperature is lower than 60 ° C., the adhesiveness tends to decrease, and when the temperature exceeds 240 ° C., the substrate tends to be deformed and warpage tends to increase. Examples of the heating method include contacting the substrate or semiconductor chip with a preheated hot plate, irradiating the substrate or semiconductor chip with infrared rays or microwaves, and blowing hot air.
本発明においては、特定の組成を有する接着シートは配線回路及びワイヤなどに起因する凹凸の充てん性と上下の半導体チップとの絶縁性に優れる。 In the present invention, the adhesive sheet having a specific composition is excellent in the filling property of the unevenness caused by the wiring circuit and the wire and the insulation between the upper and lower semiconductor chips.
また、本発明の接着シートは、配線回路及びワイヤなどに起因する凹凸の充てん性が良好であり、半導体装置の製造において、ウエハと接着シートを同時に切断するダイシング工程での切断性が優れるため、ダイシングの速度を早くすることができる。そのため、本発明の接着シートによれば、半導体装置の歩留の向上、製造速度の向上をはかることが可能となる。 In addition, the adhesive sheet of the present invention has good filling of unevenness caused by wiring circuits, wires, etc., and in the manufacture of semiconductor devices, because it has excellent cutting performance in the dicing process of simultaneously cutting the wafer and the adhesive sheet, Dicing speed can be increased. Therefore, according to the adhesive sheet of the present invention, it is possible to improve the yield of the semiconductor device and the manufacturing speed.
さらに、本発明の接着シートは、半導体装置の製造における半導体チップと基板や下層のチップなどの支持部材との接着工程において、接着信頼性に優れる接着シートとして使用することができる。即ち、本発明の接着シートは、半導体搭載用支持部材に半導体チップを実装する場合に必要な耐熱性、耐湿性、絶縁性を有し、かつ作業性に優れるものである。 Furthermore, the adhesive sheet of the present invention can be used as an adhesive sheet having excellent adhesion reliability in an adhesion process between a semiconductor chip and a support member such as a substrate or a lower layer chip in the manufacture of a semiconductor device. That is, the adhesive sheet of the present invention has heat resistance, moisture resistance, insulation necessary for mounting a semiconductor chip on a semiconductor mounting support member, and is excellent in workability.
［接着シートの組成と製造方法］
（実施例１）
第１の接着剤層
エポキシ樹脂としてＹＤＣＮ−７０３（東都化成（株）製商品名、クレゾールノボラック型エポキシ樹脂、エポキシ当量２１０）５５重量部；フェノール樹脂としてミレックスＸＬＣ−ＬＬ（三井化学（株）製商品名、フェノール樹脂）４５重量部；シランカップリング剤としてＡ−１１６０（日本ユニカー（株）製商品名）０．７重量部、Ａ−１８９（日本ユニカー（株）製商品名）０．７部；シリカフィラー（粒子）としてアドマファインＳ０−Ｃ２（株式会社アドマテック製商品名、比重（真密度）：２．２ｇ／ｃｍ３、嵩密度０．７ｇ／ｃｍ３、平均粒径０．５μｍ、比表面積６．０ｍ２／ｇ）１００重量部；からなる組成物に、シクロヘキサノンを加えて攪拌混合し、更にビーズミルを用いて９０分混練した。
[Composition and production method of adhesive sheet]
Example 1
First adhesive layer YDCN-703 (trade name, manufactured by Toto Kasei Co., Ltd., cresol novolac type epoxy resin, epoxy equivalent 210) 55 parts by weight as an epoxy resin; Millex XLC-LL (Mitsui Chemicals, Inc.) as a phenol resin Trade name, phenol resin) 45 parts by weight; A-1160 (trade name, manufactured by Nihon Unicar Co., Ltd.) 0.7 parts by weight as a silane coupling agent, A-189 (trade name, manufactured by Nihon Unicar Co., Ltd.) 0.7 Part: Admafine S0-C2 (trade name, manufactured by Admatech Co., Ltd., specific gravity (true density): 2.2 g / cm 3 , bulk density 0.7 g / cm 3 , average particle size 0.5 μm, as silica filler (particles) Cyclohexanone was added to a composition comprising 100 parts by weight of a specific surface area of 6.0 m 2 / g), and the mixture was stirred and mixed, and further kneaded for 90 minutes using a bead mill.
これにグリシジルアクリレート又はグリシジルメタクリレート２〜６重量％を含むアクリルゴムＨＴＲ−８６０Ｐ−３（ナガセケムテックス（株）製商品名、重量平均分子量８０万）を２００重量部、硬化促進剤としてキュアゾール２ＰＺ−ＣＮ（四国化成（株）製商品名、１−シアノエチル−２−フェニルイミダゾール）０．５重量％を加えて、攪拌混合した。 200 parts by weight of acrylic rubber HTR-860P-3 (trade name, manufactured by Nagase ChemteX Corp., weight average molecular weight: 800,000) containing 2 to 6% by weight of glycidyl acrylate or glycidyl methacrylate is used as a curing accelerator. CN (trade name, 1-cyanoethyl-2-phenylimidazole) manufactured by Shikoku Kasei Co., Ltd. was added in an amount of 0.5% by weight and mixed with stirring.
この接着剤ワニスを、厚さ５０μｍの離型処理したポリエチレンテレフタレートフィルム上に塗布し、９０℃１０分間、１２０℃で５分間加熱乾燥して膜厚が１５μｍの塗膜とし、Ｂステージ状態の接着シート（第１の接着剤層）を作製した。このフィルムのフローは２２０μｍであった。 This adhesive varnish is applied onto a 50 μm thick polyethylene terephthalate film which has been subjected to a release treatment, and is heated and dried at 90 ° C. for 10 minutes and 120 ° C. for 5 minutes to form a coating film having a film thickness of 15 μm. A sheet (first adhesive layer) was produced. The film flow was 220 μm.
なお、嵩密度は、体積２００ｃｍ３の容器に粉体１００ｃｍ３を一定方法で充填し、上下に容器を振動させるタッピングを１００回行い、その後の粒子間の空隙も含めた体積で、粉体の質量を除して求めた値である。 Incidentally, the bulk density, the powder 100 cm 3 was filled at a constant manner vessel volume 200 cm 3, carried out 100 times tapping vibrating the container up and down, the volume of the void was also included between subsequent particle, powder The value obtained by dividing the mass.
第２の接着剤層
エポキシ樹脂としてビスフェノールＦ型エポキシ樹脂（エポキシ当量１６０、東都化成株式会社製商品名ＹＤＦ−８１７０Ｃを使用）３０重量部、クレゾールノボラック型エポキシ樹脂（エポキシ当量２１０、東都化成株式会社製商品名ＹＤＣＮ−７０３を使用）１０重量部；エポキシ樹脂の硬化剤としてフェノールノボラック樹脂（大日本インキ化学工業株式会社製商品名プライオーフェンＬＦ２８８２を使用）２７重量部；エポキシ基含有アクリル系共重合体としてエポキシ基含有アクリルゴム（ゲル パーミエーション クロマトグラフィーによる重量平均分子量８０万、グリシジルメタクリレート３重量％、Ｔｇは−７℃、ナガセケムテックス株式会社製商品名ＨＴＲ−８６０Ｐ−３を使用）１５重量部；硬化促進剤としてイミダゾール系硬化促進剤（四国化成工業株式会社製商品名キュアゾール２ＰＺ−ＣＮを使用）０．１重量部；シリカフィラー（株式会社アドマテック製商品名アドマファインＳ０−Ｃ２（比重（真密度）：２．２ｇ／ｃｍ３、嵩密度０．７ｇ／ｃｍ３、平均粒径０．５μｍ、比表面積６．０ｍ２／ｇを使用）６０重量部；シランカップリング剤（日本ユニカー株式会社製商品名Ａ−１８９を使用）０．２５重量部及び（日本ユニカー株式会社製商品名Ａ−１１６０を使用）０．５重量部；からなる組成物に、シクロヘキサノンを加えて撹拌混合し、接着剤ワニスを得た。
Second adhesive layer 30 parts by weight of bisphenol F type epoxy resin (epoxy equivalent 160, product name YDF-8170C manufactured by Toto Kasei Co., Ltd.) as an epoxy resin, cresol novolac type epoxy resin (epoxy equivalent 210, Toto Kasei Co., Ltd.) Product name YDCN-703 used) 10 parts by weight; phenol novolak resin (using Dainippon Ink Chemical Co., Ltd. trade name Pryofen LF2882) as epoxy resin curing agent; epoxy group-containing acrylic copolymer Epoxy group-containing acrylic rubber as a combination (weight average molecular weight of 800,000 by gel permeation chromatography, 3% by weight of glycidyl methacrylate, Tg of -7 ° C., using trade name HTR-860P-3 manufactured by Nagase ChemteX Corporation) 15% Part; curing accelerator and 0.1 part by weight of an imidazole-based curing accelerator (trade name Curesol 2PZ-CN manufactured by Shikoku Chemicals Co., Ltd.); silica filler (trade name Admafine S0-C2 manufactured by Admatech Co., Ltd. (specific gravity (true density): 2) 0.2 g / cm 3 , bulk density 0.7 g / cm 3 , average particle size 0.5 μm, specific surface area 6.0 m 2 / g used) 60 parts by weight; Silane coupling agent (trade name A manufactured by Nippon Unicar Co., Ltd.) -189 using) 0.25 parts by weight and (using Nihon Unicar Co., Ltd. product name A-1160) 0.5 parts by weight; to the composition consisting of; and stirring and mixing, to obtain an adhesive varnish It was.
この接着剤ワニスを、厚さ５０μｍの離型処理したポリエチレンテレフタレートフィルム上に塗布し、９０℃１０分間、１２０℃で１０分間加熱乾燥して膜厚が５０μｍの塗膜とし、Ｂステージ状態の接着シート（第２の接着剤層）を作製した。このフィルムのフローは２３６０μｍであった。
第１、第２の接着剤層を６０℃でラミネートし、第１及び第２の接着剤層を有する多層接着シートを作製した。
This adhesive varnish is coated on a 50 μm thick polyethylene terephthalate film which has been subjected to a release treatment, and is heated and dried at 90 ° C. for 10 minutes and at 120 ° C. for 10 minutes to form a coating film having a film thickness of 50 μm. A sheet (second adhesive layer) was produced. The flow of this film was 2360 μm.
The first and second adhesive layers were laminated at 60 ° C. to produce a multilayer adhesive sheet having the first and second adhesive layers.
加工すべき半導体ウエハＡ（厚さ８０μｍ）に、第１の接着剤層が半導体ウエハＡに接するように多層接着シートを６０℃でラミネートし、端部を切断した。これにダイシングテープ１を、ダイシングテープ１上に第２の接着剤層ａが積層されるように配置し、これらをホットロールラミネータ（Ｄｕ Ｐｏｎｔ製Ｒｉｓｔｏｎ）で２５℃でラミネートした（図４）。この際ダイシングテープには古河電工（株）製（ＵＣ３００４Ｍ−８０）を用いた。ダイシングテープの膜厚は、１００μｍであった。 A multilayer adhesive sheet was laminated at 60 ° C. on the semiconductor wafer A to be processed (thickness: 80 μm) so that the first adhesive layer was in contact with the semiconductor wafer A, and the ends were cut. The dicing tape 1 was placed thereon so that the second adhesive layer a was laminated on the dicing tape 1, and these were laminated at 25 ° C. with a hot roll laminator (Riston manufactured by Du Pont) (FIG. 4). At this time, Furukawa Electric Co., Ltd. (UC3004M-80) was used as the dicing tape. The film thickness of the dicing tape was 100 μm.
（実施例２、３）
配合を表１の実施例２、３に示すように変更した以外は、実施例１と同様の工程を経て接着シートを作製した。なお、実施例２では、さらにシリカフィラーＲ９７２（日本アエロジル（株）製、比重（真密度）：２．１ｇ／ｃｍ３、嵩密度０．０５ｇ／ｃｍ３、平均粒径０．０１６〜０．０３μｍ、比表面積１３０ｍ２／ｇ）を用いた。
(Examples 2 and 3)
Except for changing the formulation as shown in Examples 2 and 3 of Table 1, an adhesive sheet was prepared through the same steps as in Example 1. In Example 2, silica filler R972 (manufactured by Nippon Aerosil Co., Ltd., specific gravity (true density): 2.1 g / cm 3 , bulk density 0.05 g / cm 3 , average particle size 0.016-0. 03 μm, specific surface area 130 m 2 / g) was used.
（比較例１〜３）
配合を表１の比較例１〜３に示すように変更した以外は、実施例１と同様の工程を経て接着シートを作製した。
(Comparative Examples 1-3)
An adhesive sheet was prepared through the same steps as in Example 1 except that the formulation was changed as shown in Comparative Examples 1 to 3 in Table 1.
なお、実施例１〜３、及び比較例１〜３で用いた樹脂の溶融粘度を上述の方法により測定（厚さ５００μｍ）したところ、１００万Ｐａ・ｓであった。 In addition, it was 1 million Pa.s when the melt viscosity of resin used in Examples 1-3 and Comparative Examples 1-3 was measured by the above-mentioned method (thickness 500 micrometers).
［評価］
実施例１〜３及び比較例１〜３で得られた多層接着シートを用いて以下に示す評価項目について評価を行った。なお、接着シートは、ウエハ又は半導体チップに接する側が第１の接着剤層、基板に接する側が第２の接着剤層となるように使用した。
[Evaluation]
The evaluation items shown below were evaluated using the multilayer adhesive sheets obtained in Examples 1 to 3 and Comparative Examples 1 to 3. The adhesive sheet was used such that the side in contact with the wafer or semiconductor chip was the first adhesive layer and the side in contact with the substrate was the second adhesive layer.
（１）接着力
１２０℃のホットプレート上で、半導体チップ（５ｍｍ角）を金めっき基板（銅箔付フレキ基板電解金めっき（Ｎｉ：５μｍ、Ａｕ：０．３μｍ））上に接着シートを用いて接着し、１３０℃、３０ｍｉｎ＋１７０℃で１時間キュアした。この試料について８５℃／８５％ＲＨ、４８時間吸湿後の２６０℃での剪断強度を測定した。
(1) Adhesive force On a hot plate at 120 ° C., an adhesive sheet is used on a gold-plated substrate (flexible substrate electrolytic gold plating with copper foil (Ni: 5 μm, Au: 0.3 μm)) on a semiconductor chip (5 mm square). And cured at 130 ° C. and 30 min + 170 ° C. for 1 hour. This sample was measured for shear strength at 260 ° C. after moisture absorption at 85 ° C./85% RH for 48 hours.
（２）ラミネート性
ホットロールラミネータ（６０℃、０．３ｍ／分、０．３ＭＰａ）で幅１０ｍｍの接着シートとウエハを貼り合わせ、その後、接着シートをＴＯＹＯＢＡＬＷＩＮ製ＵＴＭ−４−１００型テンシロンを用いて、２５℃の雰囲気中で、９０°の角度で、５０ｍｍ／分の引張り速度で剥がしたときの９０°ピール強度を求めた。９０°ピール強度が３０Ｎ／ｍ以上の場合はラミネート性良好（○）、９０°ピール強度が３０Ｎ／ｍ未満の場合はラミネート性不良（×）とした。
(2) Laminating property An adhesive sheet having a width of 10 mm and a wafer are bonded together with a hot roll laminator (60 ° C., 0.3 m / min, 0.3 MPa), and then the adhesive sheet is made of TOYOBALWIN UTM-4-100 type Tensilon. The 90 ° peel strength when peeled off at an angle of 90 ° at a pulling speed of 50 mm / min in an atmosphere of 25 ° C. was obtained. When the 90 ° peel strength was 30 N / m or more, the laminate property was good (◯), and when the 90 ° peel strength was less than 30 N / m, the laminate property was poor (x).
（３）フロー
接着シートとＰＥＴフィルムを１×２ｃｍの短冊状に打ち抜いたサンプルについて、熱圧着試験装置（テスター産業（株）製）を用いて熱板温度１００℃、圧力１ＭＰａで１８秒間プレスした後、サンプルの端部からはみだした樹脂の長さを光学顕微鏡で測定し、これをフロー量とした。
(3) Flow A sample obtained by punching an adhesive sheet and a PET film into a 1 × 2 cm strip shape was pressed for 18 seconds at a hot plate temperature of 100 ° C. and a pressure of 1 MPa using a thermocompression test apparatus (manufactured by Tester Sangyo Co., Ltd.). Thereafter, the length of the resin protruding from the end of the sample was measured with an optical microscope, and this was taken as the flow amount.
（４）ダイシング性
接着シート、ダイシングテープの付いた半導体ウエハに、ダイシングカッターを用いてダイシング、さらに洗浄、乾燥を行い接着シート付き半導体チップを得た。その際、半導体チップの側面のクラックの最大高さと樹脂のばりの長さを測定し、それらが、３０μｍ以下の場合は○、３０μｍ超の場合は×とした。
(4) Dicing property The semiconductor wafer with the adhesive sheet and the dicing tape was diced with a dicing cutter, further washed and dried to obtain a semiconductor chip with an adhesive sheet. At that time, the maximum height of the cracks on the side surface of the semiconductor chip and the length of the resin flash were measured.
（５）充てん性、耐リフロークラック性及び耐温度サイクル性
接着剤付き半導体チップと、厚み２５μｍのポリイミドフィルムを基材に用いた高さ５０μｍ、幅４０μｍ、アスペクト比１．２５の凹凸を有する配線基板を０．１ＭＰａ、１ｓ、１６０℃の条件で貼り合せた半導体装置サンプル（片面にはんだボールを形成）を作製し、充てん性、耐熱性を調べた。充てん性の評価は、チップの断面を研磨し、光学顕微鏡で配線基板の凹凸付近などを観察し、直径５μｍ以上の空隙の有無を調査することにより行った。直径５μｍ以上の空隙のないものを○、あるものを×とした。耐熱性の評価方法には、耐リフロークラック性と耐温度サイクル試験を適用した。
(5) Fillability, reflow crack resistance and temperature cycle resistance Wiring having irregularities with a height of 50 μm, a width of 40 μm, and an aspect ratio of 1.25 using a semiconductor chip with an adhesive and a polyimide film with a thickness of 25 μm as a base material A semiconductor device sample (a solder ball was formed on one surface) in which the substrates were bonded together under the conditions of 0.1 MPa, 1 s, and 160 ° C. was examined for filling properties and heat resistance. The evaluation of the filling property was performed by polishing the cross section of the chip, observing the vicinity of the unevenness of the wiring board with an optical microscope, and investigating the presence or absence of voids having a diameter of 5 μm or more. A sample having a diameter of 5 μm or more without voids was marked with “◯”, and a sample with “x”. As the evaluation method for heat resistance, reflow crack resistance and temperature cycle resistance tests were applied.
耐リフロークラック性の評価は、サンプル表面の最高温度が２６０℃でこの温度を２０秒間保持するように温度設定したＩＲリフロー炉にサンプルを通し、室温で放置することにより冷却する処理を２回繰り返したサンプル中のクラックを、目視と超音波顕微鏡で視察した。試料１０個すべてでクラックの発生していないものを○とし、１個以上発生していたものを×とした。 Evaluation of reflow cracking resistance was repeated twice by passing the sample through an IR reflow furnace set at a maximum temperature of 260 ° C and maintaining the temperature for 20 seconds, and then allowing it to cool at room temperature. The cracks in the samples were inspected visually and with an ultrasonic microscope. In all 10 samples, no crack occurred and ◯ indicates that one or more cracks occurred.
耐温度サイクル性は、サンプルを−５５℃雰囲気に３０分間放置し、その後１２５℃の雰囲気に３０分間放置する工程を１サイクルとして、１０００サイクル後において超音波顕微鏡を用いて剥離やクラック等の破壊が試料１０すべてで発生していないものを○、１個以上発生したものを×とした。 The temperature cycle resistance is that the sample is left in a −55 ° C. atmosphere for 30 minutes and then left in a 125 ° C. atmosphere for 30 minutes. After 1000 cycles, an ultrasonic microscope is used to destroy peeling or cracks. Is not generated in all of the samples 10, and one or more is generated is ×.
（６）バリア性
（５）で作製したサンプルの断面を観察し、凸部と半導体チップ間の最小距離を測定した。凸部と半導体チップが接触しているもの及び距離が５μｍ未満のものを×、５μｍから２０μｍのものを○と判定した。
上記の評価結果を表１に示す。
(6) Barrier property The cross section of the sample produced in (5) was observed, and the minimum distance between the convex portion and the semiconductor chip was measured. The case where the convex part and the semiconductor chip were in contact and the case where the distance was less than 5 μm were evaluated as x, and the case where the distance was 5 μm to 20 μm.
The evaluation results are shown in Table 1.
表１から明らかなように、実施例１〜３の接着シートは、ラミネート性が良好であり、基板やワイヤの凹凸の充てん性、バリア性も良好であることがわかる。これに対して、比較例１〜３の接着シートは、いずれもバリア性又はラミネート性が不良であることがわかる。 As is apparent from Table 1, it can be seen that the adhesive sheets of Examples 1 to 3 have good laminating properties and good filling properties and barrier properties of the unevenness of the substrate and wires. On the other hand, it can be seen that the adhesive sheets of Comparative Examples 1 to 3 have poor barrier properties or laminating properties.
以上、本発明について実施例を用いて説明してきたが、以下の作用効果を奏することがわかった。本発明の接着シートを用いた場合は、半導体装置を製造する際のダイシング工程において、ウエハと接着シートを良好に切断可能である。
また、ダイシング時の半導体チップ飛びも無く、ピックアップ性も良好である。
As mentioned above, although this invention has been demonstrated using the Example, it turned out that there exist the following effects. When the adhesive sheet of the present invention is used, the wafer and the adhesive sheet can be satisfactorily cut in the dicing process when manufacturing the semiconductor device.
Further, there is no skipping of the semiconductor chip during dicing, and the pickup property is good.
さらに、半導体チップと凹凸を有する基板、ワイヤ付き半導体チップとの接着工程において、充てん性に優れ、また半導体搭載用支持部材に半導体チップを実装する場合に必要な耐熱性、耐湿性を有し、かつ作業性に優れる。このことから、本発明の接着シートによれば、半導体装置の信頼性の向上と共に、半導体装置の加工速度、歩留の向上をはかることが可能となる。 Furthermore, in the bonding process between the semiconductor chip and the substrate having irregularities, the semiconductor chip with wires, it has excellent filling properties, and has heat resistance and moisture resistance necessary when mounting the semiconductor chip on the semiconductor mounting support member, And excellent workability. Therefore, according to the adhesive sheet of the present invention, it is possible to improve the reliability of the semiconductor device and improve the processing speed and yield of the semiconductor device.
Ａ 半導体ウエハ
Ａ１ 半導体チップ
ｂ’ 第１の接着剤層
ｂ 接着シート
ａ 第２の接着剤層
ｂ１ 接着剤
ｃ 多層接着シート
１ ダイシングテープ
２ ワイヤ
３ 基板
４ 配線
ｘ 最大幅
ｙ 最大高さ
A semiconductor wafer A1 semiconductor chip b ′ first adhesive layer b adhesive sheet a second adhesive layer b1 adhesive c multilayer adhesive sheet 1
Claims (8)
嵩密度／真密度が０．２〜０．７である平均粒径０．１〜５μｍの粒子５〜３０体積％、及び
嵩密度／真密度が０．２未満である平均粒径０．１μｍ未満の粒子０〜５体積％を含むことを特徴とする接着シート。 70-95 volume% of resin whose melt viscosity in 100 degreeC is 1 * 10 < 4 > -1 * 10 < 8 > Pa * s,
5-30% by volume of particles having an average particle size of 0.1-5 μm with a bulk density / true density of 0.2-0.7, and an average particle size of 0.1 μm with a bulk density / true density of less than 0.2 An adhesive sheet, comprising 0 to 5% by volume of less than particles.
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| JP2006014267A JP5272284B2 (en) | 2005-10-06 | 2006-01-23 | Adhesive sheet, semiconductor device, and method of manufacturing semiconductor device |
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| JP2006014267A JP5272284B2 (en) | 2005-10-06 | 2006-01-23 | Adhesive sheet, semiconductor device, and method of manufacturing semiconductor device |
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| JP5272284B2 JP5272284B2 (en) | 2013-08-28 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009124115A (en) * | 2007-10-22 | 2009-06-04 | Hitachi Chem Co Ltd | Adhesive sheet |
| JP2011181684A (en) * | 2010-03-01 | 2011-09-15 | Nitto Denko Corp | Die bond film, dicing die bond film, and semiconductor device |
| KR101166634B1 (en) | 2009-04-17 | 2012-07-18 | 후루카와 덴키 고교 가부시키가이샤 | Adhesive film and wafer processing tape |
| JP2014111680A (en) * | 2012-12-05 | 2014-06-19 | Sumitomo Bakelite Co Ltd | Adhesive film, method for producing electronic component, and electronic component |
| CN104756225A (en) * | 2012-09-20 | 2015-07-01 | 斯莱戈科技公司 | Extremely thin package |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002220576A (en) * | 2001-01-26 | 2002-08-09 | Hitachi Chem Co Ltd | Adhesive composition, adhesion member, support member for semiconductor loading, semiconductor apparatus or the like |
| JP2002265888A (en) * | 2001-03-15 | 2002-09-18 | Hitachi Chem Co Ltd | Adhesive film and its use and method for producing semiconductor device |
| JP2002275444A (en) * | 2001-03-19 | 2002-09-25 | Hitachi Chem Co Ltd | Adhesive composition and application thereof |
| JP2004072009A (en) * | 2002-08-09 | 2004-03-04 | Fujitsu Ltd | Semiconductor device, and manufacturing method thereof |
| WO2004109786A1 (en) * | 2003-06-06 | 2004-12-16 | Hitachi Chemical Co., Ltd. | Adhesive sheet, dicing tape integrated type adhesive sheet, and semiconductor device producing method |
-
2006
- 2006-01-23 JP JP2006014267A patent/JP5272284B2/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002220576A (en) * | 2001-01-26 | 2002-08-09 | Hitachi Chem Co Ltd | Adhesive composition, adhesion member, support member for semiconductor loading, semiconductor apparatus or the like |
| JP2002265888A (en) * | 2001-03-15 | 2002-09-18 | Hitachi Chem Co Ltd | Adhesive film and its use and method for producing semiconductor device |
| JP2002275444A (en) * | 2001-03-19 | 2002-09-25 | Hitachi Chem Co Ltd | Adhesive composition and application thereof |
| JP2004072009A (en) * | 2002-08-09 | 2004-03-04 | Fujitsu Ltd | Semiconductor device, and manufacturing method thereof |
| WO2004109786A1 (en) * | 2003-06-06 | 2004-12-16 | Hitachi Chemical Co., Ltd. | Adhesive sheet, dicing tape integrated type adhesive sheet, and semiconductor device producing method |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009124115A (en) * | 2007-10-22 | 2009-06-04 | Hitachi Chem Co Ltd | Adhesive sheet |
| KR101166634B1 (en) | 2009-04-17 | 2012-07-18 | 후루카와 덴키 고교 가부시키가이샤 | Adhesive film and wafer processing tape |
| JP2011181684A (en) * | 2010-03-01 | 2011-09-15 | Nitto Denko Corp | Die bond film, dicing die bond film, and semiconductor device |
| US8779586B2 (en) | 2010-03-01 | 2014-07-15 | Nitto Denko Corporation | Die bond film, dicing die bond film, and semiconductor device |
| TWI454552B (en) * | 2010-03-01 | 2014-10-01 | Nitto Denko Corp | Die bonding film, dicing-bonding film, and semiconductor apparatus |
| CN104756225A (en) * | 2012-09-20 | 2015-07-01 | 斯莱戈科技公司 | Extremely thin package |
| US9735018B2 (en) | 2012-09-20 | 2017-08-15 | Silego Technology, Inc. | Extremely thin package |
| CN111508908A (en) * | 2012-09-20 | 2020-08-07 | 斯莱戈科技公司 | Very thin package |
| JP2014111680A (en) * | 2012-12-05 | 2014-06-19 | Sumitomo Bakelite Co Ltd | Adhesive film, method for producing electronic component, and electronic component |
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|---|---|
| JP5272284B2 (en) | 2013-08-28 |
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