JP2007123482A - Wiring board for light emitting element, light emitting device, and method for manufacturing board - Google Patents

Wiring board for light emitting element, light emitting device, and method for manufacturing board Download PDF

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JP2007123482A
JP2007123482A JP2005312587A JP2005312587A JP2007123482A JP 2007123482 A JP2007123482 A JP 2007123482A JP 2005312587 A JP2005312587 A JP 2005312587A JP 2005312587 A JP2005312587 A JP 2005312587A JP 2007123482 A JP2007123482 A JP 2007123482A
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emitting element
light emitting
metal
wiring board
light
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JP4804109B2 (en
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Kenichi Yoneyama
健一 米山
Tomohide Hasegawa
智英 長谷川
Yasuhiro Sasaki
康博 佐々木
Minako Izumi
美奈子 泉
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Kyocera Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

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Abstract

<P>PROBLEM TO BE SOLVED: To provide a wiring board for a light emitting element and a light emitting device, wherein heat dissipation and reliability are excellent. <P>SOLUTION: The wiring board for the light emitting element comprises an insulating substrate 3 made of ceramics; a penetrating metal body 11 which has a higher heat conductivity than the insulating substrate 3 formed through the insulating substrate 3, and has a metal as a main component; a coated metal layer 13 formed so as to coat the penetrating metal body 11 beyond the penetrating metal body 11 and a boundary between the penetrating metal body 11 and the insulating substrate 3, with a metal as a main component; and an intermediate layer 15 arranged so as to be interposed between a center part of a surface of the penetrating metal body 11 and the coated metal layer 13, with ceramics as a main component. The coated metal layer 13 is a mounting part 17 for mounting the light emitting element. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は、例えば、発光ダイオード等の発光素子を搭載するための発光素子用配線基板および発光装置並びに発光素子用配線基板の製造方法に関する。   The present invention relates to a light emitting element wiring board and a light emitting device for mounting a light emitting element such as a light emitting diode, and a method for manufacturing the light emitting element wiring board.

従来、ＬＥＤを用いた発光装置は、非常に発光効率が高く、しかも、白熱電球などと比較すると発光に伴い発生する熱量が小さいために様々な用途に用いられてきた。しかしながら、白熱電球や蛍光灯などと比較すると発光量が小さいために、照明用ではなく、表示用の光源として用いられ、通電量も３０ｍＡ程度と非常に小さいものであった。（特許文献１参照）。   Conventionally, light emitting devices using LEDs have been used for various applications because of their extremely high luminous efficiency and the small amount of heat generated with light emission compared to incandescent bulbs. However, since the amount of emitted light is small compared to incandescent bulbs, fluorescent lamps, etc., it is used not for illumination but as a display light source, and the energization amount is very small at about 30 mA. (See Patent Document 1).

そして、近年では、発光素子を用いた発光装置の高輝度、白色化に伴い、携帯電話や大型液晶ＴＶ等のバックライトに発光装置が多く用いられてきている。しかしながら、発光素子の高輝度化に伴い、発光装置から発生する熱も増加しており、発光素子の輝度の低下をなくす為には、このような熱を素子より速やかに放散する高い熱放散性を有する発光素子用配線基板が必要となっている（特許文献２、３参照）。   In recent years, with the increase in brightness and whiteness of light-emitting devices using light-emitting elements, light-emitting devices have been frequently used for backlights of mobile phones, large liquid crystal TVs, and the like. However, as the brightness of light emitting elements increases, the heat generated from the light emitting device also increases, and in order to eliminate the decrease in the brightness of the light emitting elements, such heat dissipation that dissipates such heat more quickly than the elements is high. A wiring board for a light emitting element having the above is required (see Patent Documents 2 and 3).

そして、発光素子用配線基板の放熱性を改善する手段として、発光素子用配線基板に放熱穴を形成するとともに、発光素子が形成される側の放熱穴を覆う補助セラミックシートを設け、この補助セラミックシートに発光素子を搭載することが提案されている。また、この手法では、放熱穴に金属ペーストを充填することも提案されている（特許文献４参照）。   As a means for improving the heat dissipation of the light emitting element wiring board, a heat dissipation hole is formed in the light emitting element wiring board, and an auxiliary ceramic sheet is provided to cover the heat dissipation hole on the side where the light emitting element is formed. It has been proposed to mount a light emitting element on a sheet. In this method, it has also been proposed to fill a heat radiation hole with a metal paste (see Patent Document 4).

また、本出願人らは、更なる放熱性を改善するために、焼成を施し、発光素子の下部に有機物を含有しない貫通金属体を設けた発光素子用配線基板を提案している（特許文献５参照）。
特開２００２−１２４７９０号公報 特開平１１−１１２０２５号公報 特開２００３−３４７６００号公報 特許３４６９８９０号公報 特願２００４−３４０３３９号 Further, the present applicants have proposed a light-emitting element wiring board in which firing is performed and a penetrating metal body that does not contain an organic substance is provided below the light-emitting element in order to further improve heat dissipation (Patent Literature). 5).
JP 2002-124790 A Japanese Patent Laid-Open No. 11-112025 JP 2003-347600 A Japanese Patent No. 3469890 Japanese Patent Application No. 2004-340339

しかしながら、特許文献４に記載の方法では、放熱穴を形成した場合においても放熱穴の内部は熱伝導性の悪い空気が存在するのみで、放熱性を格段に向上させることは望めない。また、放熱穴に金属ペーストを充填した場合であっても金属ペーストには金属成分の他に熱伝導率の低い樹脂などを含有するため、放熱性の大幅な向上は期待できない。   However, in the method described in Patent Document 4, even when the heat radiating hole is formed, only air with poor thermal conductivity exists in the heat radiating hole, and it is not possible to significantly improve the heat radiating performance. Further, even when the metal paste is filled in the heat dissipation holes, since the metal paste contains a resin having a low thermal conductivity in addition to the metal component, a significant improvement in heat dissipation cannot be expected.

これに対して、特許文献５に記載の方法では、発光素子用配線基板の放熱性を向上させることはできるものの、貫通金属体の断面積を大きくし、この貫通金属体の表面を覆うように被覆金属層を形成した場合、前記被覆金属層のうち、貫通金属体の中心部を覆う部分が他の部分よりも緻密になりにくく、視覚的には変色を呈し、外観不良となるという問題があった。また、この部分は熱伝導率が低下したり、めっき性が著しく低下するという問題があった。   On the other hand, in the method described in Patent Document 5, although the heat dissipation of the wiring board for light emitting elements can be improved, the cross-sectional area of the through metal body is increased so as to cover the surface of the through metal body. When the coated metal layer is formed, there is a problem in that the portion of the coated metal layer that covers the central portion of the penetrating metal body is less dense than the other portion, visually changes in color, and the appearance is poor. there were. Further, this portion has a problem that the thermal conductivity is lowered and the plating property is remarkably lowered.

従って本発明は、熱放散性良好で且つ、外観不良のない信頼性に優れた発光素子用配線基板ならびに発光装置およびその製造方法を提供することを目的とする。   Accordingly, an object of the present invention is to provide a light-emitting element wiring substrate, a light-emitting device, and a method for manufacturing the same, which have good heat dissipation and excellent reliability without appearance defects.

本発明の発光素子用配線基板は、セラミックスからなる絶縁基体と、前記絶縁基体を貫通して設けられ、前記絶縁基板よりも高い熱伝導率を有し、金属を主成分とする貫通金属体と、該貫通金属体および該貫通金属体と前記絶縁基板との境界を越えて前記貫通金属体を被覆するように形成され、金属を主成分とする被覆金属層と、前記貫通金属体の表面の中心部と前記被覆金属層との間に介在するように配設され、セラミックスを主成分とする中間層と、を具備し、前記被覆金属層が発光素子を搭載する搭載部であることを特徴とする。   A wiring board for a light-emitting element according to the present invention includes an insulating base made of ceramics, a penetrating metal body that is provided through the insulating base, has a higher thermal conductivity than the insulating substrate, and contains metal as a main component. The penetrating metal body and the metal penetrating metal body formed so as to cover the penetrating metal body beyond the boundary between the penetrating metal body and the insulating substrate, and a surface of the penetrating metal body. An intermediate layer comprising ceramic as a main component, the intermediate metal layer being disposed between the central portion and the covering metal layer, wherein the covering metal layer is a mounting portion on which the light emitting element is mounted. And

また、本発明の発光素子用配線基板は、前記中間層が、前記貫通金属体の表面を完全に覆うように形成されたことが望ましい。   In the light emitting element wiring board of the present invention, it is preferable that the intermediate layer is formed so as to completely cover the surface of the through metal body.

また、本発明の発光素子用配線基板は、前記中間層が、アルミナ、ジルコニア、マグネシア、三酸化二マンガン、カルシアおよびシリカから選ばれる材料を含有してなることが望ましい。   In the light-emitting element wiring board of the present invention, the intermediate layer preferably contains a material selected from alumina, zirconia, magnesia, dimanganese trioxide, calcia, and silica.

また、本発明の発光素子用配線基板は、前記被覆層と前記中間層とが、、前記絶縁基体の両主面に形成されていることが望ましい。   In the light-emitting element wiring board of the present invention, it is desirable that the covering layer and the intermediate layer are formed on both main surfaces of the insulating base.

また、本発明の発光素子用配線基板は、前記貫通金属体が、前記発光素子用配線基板に搭載される発光素子の搭載面積よりも大きな断面積を有することが望ましい。   In the light emitting element wiring board of the present invention, it is desirable that the through metal body has a cross-sectional area larger than a mounting area of the light emitting element mounted on the light emitting element wiring board.

また、本発明の発光素子用配線基板は、前記貫通金属体が、タングステン、モリブデン、銅および銀のうち少なくとも１種を主成分とすることが望ましい。   In the light-emitting element wiring board of the present invention, it is preferable that the through metal body contains at least one of tungsten, molybdenum, copper, and silver as a main component.

また、本発明の発光素子用配線基板は、前記貫通金属体が、セラミックスを含有することが望ましい。   In the wiring board for a light emitting device of the present invention, it is desirable that the through metal body contains ceramics.

また、本発明の発光素子用配線基板は、前記発光素子用配線基板の搭載部が形成された側の主面に、発光素子を収容するための枠体が形成されてなることが望ましい。   In the light-emitting element wiring board according to the present invention, it is preferable that a frame for housing the light-emitting element is formed on the main surface on the side where the mounting portion of the light-emitting element wiring board is formed.

本発明の発光装置は、以上説明した発光素子用配線基板の搭載部に発光素子を搭載してなることを特徴とする。   The light emitting device of the present invention is characterized in that the light emitting element is mounted on the mounting portion of the wiring board for a light emitting element described above.

本発明の発光素子用配線基板の製造方法は、セラミックグリーンシートに略同一厚みの金属シートを、、前記セラミックグリーンシートを貫通するように配設して複合成形体を作製する工程と、前記複合成形体の前記金属シートの表面のうち少なくとも中心部を覆うように中間層となるセラミック層を形成する工程と、前記セラミック層を覆うように被覆金属層となる金属ペースト層を形成する工程と、前記セラミック層、前記金属ペースト層を備えた前記複合成形体を焼成する工程と、を具備することを特徴とする。   The method for producing a wiring board for a light-emitting element according to the present invention includes a step of producing a composite molded body by disposing a metal sheet having substantially the same thickness on a ceramic green sheet so as to penetrate the ceramic green sheet; Forming a ceramic layer serving as an intermediate layer so as to cover at least a central portion of the surface of the metal sheet of the formed body; forming a metal paste layer serving as a covering metal layer so as to cover the ceramic layer; And firing the composite molded body provided with the ceramic layer and the metal paste layer.

本発明の発光素子用配線基板は、絶縁基体をセラミックスとすることで、樹脂モールド基板より高い熱伝導率を有し、且つ長期間にわたって光源によって分子構造が変化することがないため、色調変化（黒色化など）や、特性の劣化がほとんど起こらず、高い信頼性を有している。しかも、絶縁基体よりも、さらに高い熱伝導率を有する貫通金属体を、絶縁基体を貫通して設けることで、発光素子から発生する熱を更に速やかに発光素子用配線基板外へ放散することができるため、発光素子が過剰に加熱されることを防止できるため、輝度低下を防ぐ、あるいは、また、さらに高輝度にすることが可能となる。   The wiring board for a light-emitting element of the present invention has a higher thermal conductivity than that of a resin mold substrate by using an insulating base as a ceramic, and the molecular structure is not changed by a light source over a long period of time. It has high reliability with almost no deterioration in characteristics and blackening. In addition, by providing a penetrating metal body having a higher thermal conductivity than the insulating base so as to penetrate the insulating base, heat generated from the light emitting element can be dissipated more quickly to the outside of the wiring board for the light emitting element. Therefore, it is possible to prevent the light emitting element from being heated excessively, and thus it is possible to prevent a decrease in luminance or to further increase the luminance.

また、被覆金属層で、貫通金属体および貫通金属体と絶縁基板との境界を被覆することで、貫通金属体と絶縁基板との境界でクラックが発生することを抑制することができるとともに、発光素子用配線基板の放熱性を高め、搭載部の平坦性を向上させることができる。   In addition, by covering the through metal body and the boundary between the through metal body and the insulating substrate with the covering metal layer, it is possible to suppress the occurrence of cracks at the boundary between the through metal body and the insulating substrate, and to emit light. The heat dissipation of the element wiring board can be improved, and the flatness of the mounting portion can be improved.

しかも、貫通金属体の表面のうち少なくとも中心部を覆うように、セラミックスを主体とする中間層を配設することにより、貫通金属体の焼結時に、中間層からセラミックス焼結助剤成分が拡散し、被覆金属層からのセラミックス焼結助剤成分の特に焼結しにくい貫通金属体の中心部への流出を抑制することができるため、被覆金属層の緻密化を促進することができ、視覚的には変色を防止でき、外観不良を解消することができる。そのため、被覆金属層のうち、貫通金属体の中心部を覆う部分において熱伝導率の低下を抑制でき、めっき性の著しい低下を抑制することができる。   Moreover, by disposing an intermediate layer mainly composed of ceramics so as to cover at least the central part of the surface of the through metal body, the ceramic sintering aid component diffuses from the intermediate layer during sintering of the through metal body. In addition, the ceramic sintering aid component from the coated metal layer can be prevented from flowing out to the center of the through metal body that is particularly difficult to sinter, so that the densification of the coated metal layer can be promoted and the visual In particular, discoloration can be prevented and appearance defects can be eliminated. For this reason, in the coated metal layer, it is possible to suppress a decrease in thermal conductivity in a portion covering the central portion of the through metal body, and it is possible to suppress a significant decrease in plating performance.

また、中間層を貫通金属体の表面を完全に覆うように形成することにより、発光素子の搭載部の平坦性が維持しやすく、発光素子を安定して搭載することができる。   Further, by forming the intermediate layer so as to completely cover the surface of the penetrating metal body, the flatness of the mounting portion of the light emitting element can be easily maintained, and the light emitting element can be stably mounted.

特に、中間層に、アルミナ、ジルコニア、マグネシア、三酸化二マンガン、カルシアおよびシリカから選ばれる材料を用いることにより、安価に製造することができる。   In particular, the intermediate layer can be manufactured at low cost by using a material selected from alumina, zirconia, magnesia, dimanganese trioxide, calcia, and silica.

また、被覆層と中間層とを発光素子用配線基板の両主面に設けた場合には、さらに発光素子用配線基板の放熱性を向上させることができるとともに、発光素子用配線基板の両主面の外観不良の発生を抑制することができる。   In addition, when the covering layer and the intermediate layer are provided on both main surfaces of the light emitting element wiring substrate, the heat dissipation of the light emitting element wiring substrate can be further improved, and the both main surfaces of the light emitting element wiring substrate can be improved. It is possible to suppress the occurrence of surface appearance defects.

また、貫通金属体の断面積を、発光素子用配線基板に搭載される発光素子の搭載面積よりも大きくすることにより、高熱伝導な部分が増大し、発光素子から発生する熱を速やかに放散することができる。   Also, by making the cross-sectional area of the through metal body larger than the mounting area of the light emitting element mounted on the light emitting element wiring substrate, the portion with high thermal conductivity increases, and the heat generated from the light emitting element is quickly dissipated. be able to.

また、タングステン、モリブデン、銅および銀のうち少なくとも１種を主成分として貫通金属体を形成することで、絶縁基体との同時焼成による表面および内部配線形成が可能となり、且つ熱放散性に優れた安価な発光素子用配線基板を得ることができる。   In addition, by forming a through metal body mainly composed of at least one of tungsten, molybdenum, copper and silver, the surface and internal wiring can be formed by simultaneous firing with an insulating substrate, and heat dissipation is excellent. An inexpensive light emitting element wiring board can be obtained.

また、貫通金属体をセラミック材料を含有する複合体とすることにより、貫通金属体に所望の特性を制御することが容易となり、例えば、金属体との熱膨張係数を近づけた場合には、熱膨張のミスマッチによる金属体―発光素子用配線基板間でのクラック発生を抑制でき、且つセラミック材料が絶縁基体との接着強度を高めることができる。また、貫通金属体と絶縁基体とを同時焼成することが可能となり、工程を簡略化することもできる。   Further, by making the through metal body a composite containing a ceramic material, it becomes easy to control desired characteristics to the through metal body. For example, when the thermal expansion coefficient of the through metal body is close to that of the metal body, Generation of cracks between the metal body and the light emitting element wiring substrate due to expansion mismatch can be suppressed, and the ceramic material can increase the adhesive strength with the insulating substrate. In addition, the through metal body and the insulating base can be fired simultaneously, and the process can be simplified.

また、発光素子用配線基板の搭載部の主面に、発光素子を収納するための枠体を設けることで、発光素子を保護できるとともに、発光素子の周辺に蛍光体などを容易に配置することができる。   In addition, by providing a frame for housing the light emitting element on the main surface of the mounting portion of the wiring board for the light emitting element, the light emitting element can be protected and a phosphor or the like can be easily disposed around the light emitting element. Can do.

また、枠体により発光素子の発する光を反射させて所定の方向に誘導することもできる。   In addition, the light emitted from the light emitting element can be reflected by the frame and guided in a predetermined direction.

以上説明した本発明の発光素子用配線基板に発光素子を搭載した本発明の発光装置によれば、熱放散性良好で且つ、外観不良のない信頼性に優れた発光装置となる。   According to the light-emitting device of the present invention in which the light-emitting element is mounted on the wiring substrate for light-emitting elements of the present invention described above, the light-emitting device has excellent heat dissipation and excellent reliability without appearance defects.

また、本発明の発光素子用配線基板の製造方法によれば、以上説明した発光素子用配線基板を容易に作製することができる。   Moreover, according to the manufacturing method of the wiring board for light emitting elements of this invention, the wiring board for light emitting elements demonstrated above can be produced easily.

本発明の発光素子用配線基板１は、例えば、図１（ａ）に示すように、セラミックスにより形成された絶縁基体３と、絶縁基体３の一方の主面３ａに形成された発光素子との接続端子５、絶縁基体３の他方の主面３ｂに形成された外部電極端子７、及び接続端子５と外部電極端子７とを電気的に接続するように、絶縁基体３を貫通して設けられた貫通導体９と、絶縁基体３を貫通して設けられた絶縁基体３よりも熱伝導率が高く、金属を主成分とする貫通金属体１１と、この貫通金属体１１および貫通金属体１１と絶縁基体３との境界を覆うように形成された金属を主成分とする被覆金属層１３と、貫通金属体１１と被覆金属層１３との間に貫通金属体１１の表面のうち少なくとも中心部を覆うように配設されたセラミックスを主成分とする中間層１５とを備えたものである。   A wiring board 1 for a light-emitting element according to the present invention includes, for example, an insulating base 3 made of ceramics and a light-emitting element formed on one main surface 3a of the insulating base 3 as shown in FIG. The connection terminal 5, the external electrode terminal 7 formed on the other main surface 3 b of the insulating base 3, and the insulating base 3 are provided so as to electrically connect the connection terminal 5 and the external electrode terminal 7. The through conductor 9 having a higher thermal conductivity than the insulating base 3 provided through the insulating base 3 and having a metal as a main component, and the through metal body 11 and the through metal body 11. At least the center portion of the surface of the penetrating metal body 11 is formed between the covering metal layer 13 mainly composed of a metal formed so as to cover the boundary with the insulating base 3 and the penetrating metal body 11 and the covering metal layer 13. Mainly composed of ceramics arranged to cover It is obtained by a tier 15.

そして、絶縁基体３の一方の主面３ａに形成された被覆金属層１３は、発光素子を搭載する搭載部１７となる。   And the covering metal layer 13 formed in one main surface 3a of the insulating base 3 becomes the mounting part 17 which mounts a light emitting element.

本発明の発光素子用配線基板１においては、貫通金属体１１と被覆金属層１３との間にセラミックスを主成分とする中間層１５を配設することが重要である。   In the wiring board 1 for a light emitting element of the present invention, it is important to dispose an intermediate layer 15 mainly composed of ceramics between the through metal body 11 and the covering metal layer 13.

すなわち、金属を主成分とする貫通金属体１１並びに金属を主成分とする被覆金属１３を設けた発光素子用配線基板１は、放熱性に優れた発光素子用配線基板１となり、しかも、被覆金属１３が貫通金属体１１と被覆金属層１３とも境界を越えて形成されているため、この境界においてクラックが発生することを抑制することができることから、信頼性に優れた発光素子用配線基板１となる。   That is, the light-emitting element wiring substrate 1 provided with the through metal body 11 having a metal as a main component and the coating metal 13 having a metal as a main component becomes a light-emitting element wiring substrate 1 having excellent heat dissipation. 13 is formed beyond the boundary of both the penetrating metal body 11 and the covering metal layer 13, and it is possible to suppress the occurrence of cracks at this boundary. Become.

ところが、本発明のように中間層１５を設けない場合には、貫通金属体１１の断面積が大きくなるにつれ、金属被覆層１３のうち、貫通金属体１１と接触している部分と、絶縁基体３と接触している部分とで焼結性の差が大きくなり、絶縁基体３との距離が大きい金属被覆層１３の中心部において、緻密化不足となる問題がある。   However, when the intermediate layer 15 is not provided as in the present invention, as the cross-sectional area of the through metal body 11 increases, the portion of the metal coating layer 13 that is in contact with the through metal body 11 and the insulating substrate There is a problem in that the difference in sinterability between the portion in contact with 3 and the metal coating layer 13 having a large distance from the insulating base 3 becomes insufficiently densified.

本発明によれば、金属被覆層１３の全ての領域で、絶縁基体３あるいは中間層１５との距離を小さくすることができるため、金属被覆層１３の全ての領域で、焼結性をほぼ同等にすることができるため、中間層１５を設けることで金属被覆層１３の中心部の緻密化不足という問題を解決することができる。その結果、視覚的には金属被覆層１３の変色を防止でき、外観不良を解消することができる。そのため、被覆金属層１３のうち、貫通金属体１１の中心部を覆う部分において熱伝導率が低下することを抑制できるとともに、めっき性の著しい低下を抑制することができるのである。   According to the present invention, since the distance from the insulating base 3 or the intermediate layer 15 can be reduced in all regions of the metal coating layer 13, the sinterability is substantially equal in all regions of the metal coating layer 13. Therefore, providing the intermediate layer 15 can solve the problem of insufficient densification of the central portion of the metal coating layer 13. As a result, visual discoloration of the metal coating layer 13 can be prevented and appearance defects can be eliminated. Therefore, it can suppress that a thermal conductivity falls in the part which covers the center part of the penetration metal body 11 among the covering metal layers 13, and can suppress a remarkable fall of plating property.

そのため、従来、被覆金属層１３を用いた発光素子用配線基板１では断面積の大きな貫通金属体１１を形成することが困難であったのに対して、本発明では断面積の大きな貫通金属体１１を容易に形成することができる。   Therefore, conventionally, it has been difficult to form the through metal body 11 having a large cross-sectional area in the wiring board 1 for a light emitting element using the coated metal layer 13, whereas in the present invention, the through metal body having a large cross-sectional area is used. 11 can be easily formed.

これにより、搭載される発光素子よりも大きな断面積を有する貫通金属体１１であっても、容易に作製することができ、格段に放熱性に優れた発光素子用配線基板１を安価に提供することができる。   Thereby, even if it is the penetration metal object 11 which has a larger cross-sectional area than the light emitting element mounted, it can produce easily and provides the wiring board 1 for light emitting elements which was remarkably excellent in heat dissipation at low cost. be able to.

また、貫通金属体１１の貫通方向に直交する面の最小断面積を発光素子用配線基板１に搭載される発光素子の搭載面積よりも大きな断面積を有するものとすることが望ましい。   Further, it is desirable that the minimum cross-sectional area of the surface perpendicular to the penetrating direction of the penetrating metal body 11 is larger than the mounting area of the light-emitting element mounted on the light-emitting element wiring substrate 1.

貫通金属体１１の断面積を大きくすることにより、放熱部分が増加し、更に発光素子から発生する熱を速やかに放散することができる。特に、断面積は１．１倍以上が良く、更に好適には１．２倍以上とすることが望ましい。   By increasing the cross-sectional area of the through metal body 11, the heat radiating portion increases, and heat generated from the light emitting element can be quickly dissipated. In particular, the cross-sectional area is preferably 1.1 times or more, and more preferably 1.2 times or more.

なお、絶縁基体３あるいは中間層１５と、被覆金属層１３との距離が被覆金属層１３の焼結性に影響を及ぼす理由は、焼結時に、絶縁基体３あるいは中間層１５に含まれるセラミックス成分が、被覆金属層１３に拡散し、あたかも焼結助剤のように機能するためと考えられる。   The reason why the distance between the insulating base 3 or the intermediate layer 15 and the covering metal layer 13 affects the sinterability of the covering metal layer 13 is that the ceramic component contained in the insulating base 3 or the intermediate layer 15 during sintering. However, it is considered that it diffuses into the coated metal layer 13 and functions as if it were a sintering aid.

また、例えば、図１（ｂ）に示すように、本発明の発光素子用配線基板１においては、被覆金属層１３の焼結性をさらに均一に近づけるため、中間層１５で貫通金属体１１の表面を完全に覆うことが望ましい。また、発光素子を搭載する搭載部１７の平滑性を保つためにも、貫通金属体１１の表面を完全に覆うように形成することが望ましい。   Further, for example, as shown in FIG. 1B, in the light emitting element wiring substrate 1 of the present invention, in order to make the sinterability of the covering metal layer 13 more uniform, the intermediate layer 15 is made of the penetrating metal body 11. It is desirable to completely cover the surface. Further, in order to maintain the smoothness of the mounting portion 17 on which the light emitting element is mounted, it is desirable that the surface of the penetrating metal body 11 is completely covered.

また、例えば、本発明の発光素子用配線基板１は、図２に示すように、セラミックスにより形成された絶縁基体３を複数積層して形成してもよく、その際、異なる大きさの貫通金属体１１を複数積層することで貫通金属体１１の断面形状を階段状に形成することもできる。   Further, for example, the light emitting element wiring board 1 of the present invention may be formed by stacking a plurality of insulating bases 3 made of ceramics as shown in FIG. By laminating a plurality of bodies 11, the cross-sectional shape of the penetrating metal body 11 can be formed in a stepped shape.

また、例えば、搭載部１７側に、搭載される発光素子（図示せず）から発せられる光を所定の方向に反射、誘導するための枠体１９を配設することが望ましい。この枠体１９は、金属や樹脂などからなる接着層２１によって絶縁基体３に接続されている。また、あるいは、枠体１９は、絶縁基体３と一体化して形成されていてもよい。   Further, for example, it is desirable to dispose a frame body 19 for reflecting and guiding light emitted from a light emitting element (not shown) to be mounted in a predetermined direction on the mounting portion 17 side. The frame body 19 is connected to the insulating base 3 by an adhesive layer 21 made of metal, resin, or the like. Alternatively, the frame body 19 may be formed integrally with the insulating base 3.

本発明において、中間層１５は、セラミックスを主成分とするものであり、安価に製造できる点から、アルミナ、ジルコニア、マグネシア、三酸化二マンガン、カルシアおよびシリカから選ばれる材料を好適に使用できる。   In the present invention, the intermediate layer 15 is mainly composed of ceramics, and a material selected from alumina, zirconia, magnesia, dimanganese trioxide, calcia, and silica can be suitably used because it can be manufactured at low cost.

また、中間層１５のセラミック成分が被覆金属層１３や貫通金属体１１に拡散する可能性を考えれば、中間層１５を絶縁基体と同じ組成とすることが望ましい。   In consideration of the possibility that the ceramic component of the intermediate layer 15 diffuses into the coated metal layer 13 and the through metal body 11, it is desirable that the intermediate layer 15 has the same composition as the insulating base.

また、この中間層１５の厚みは、中間層１５形成の際に欠けがあったとしても中間層１５の機能を発現させるために５μｍ以上とすることが望ましい。また、あまり厚くすると熱放散性が低下するおそれがあるため４０μｍ以下とすることが望ましい。   Further, the thickness of the intermediate layer 15 is desirably 5 μm or more so that the function of the intermediate layer 15 is exhibited even if there is a chipping in the formation of the intermediate layer 15. Moreover, since heat dissipation may fall when it is too thick, it is desirable to set it as 40 micrometers or less.

また、貫通金属体１１を、タングステン、モリブデン、銅および銀のうち少なくとも１種を主成分として形成することで、絶縁基体３と同時焼成して、接続端子５、外部電極端子７、貫通導体９、貫通金属体１１を形成することが可能となり、安価な発光素子用配線基板１を迅速に作製することができる。   Further, the through metal body 11 is formed by using at least one of tungsten, molybdenum, copper, and silver as a main component, so that the through metal body 11 is simultaneously fired with the insulating base 3, and the connection terminal 5, the external electrode terminal 7, and the through conductor 9. The through metal body 11 can be formed, and the inexpensive light emitting element wiring substrate 1 can be quickly produced.

なお、貫通金属体１１には、上記の金属に加えて、貫通金属体１１の熱膨張係数、焼結挙動を制御するために無機粉末を含有させることもできる。その含有量は、０〜５質量％の割合が望ましく、高熱伝導率を得るためには、０〜４質量％がより望ましく、好適には０〜３質量％が良い。   In addition to the above metal, the through metal body 11 can also contain an inorganic powder in order to control the thermal expansion coefficient and sintering behavior of the through metal body 11. The content is preferably 0 to 5% by mass, more preferably 0 to 4% by mass, and preferably 0 to 3% by mass in order to obtain high thermal conductivity.

貫通金属体１１の熱膨張係数を制御する上では、貫通金属体１１の熱膨張係数を絶縁基体３の熱膨張係数に近くすることが望ましく、両者の熱膨張ミスマッチを防ぐことで、さらに、高信頼性の発光素子用配線基板１とすることができる。特に、絶縁基体３と貫通金属体１１との熱膨張係数差は４．０×１０−６／℃以下が良く、更に好適には２．０×１０−６／℃以下が良く、最も好適には１．０×１０−６／℃以下が良い。 In controlling the thermal expansion coefficient of the through metal body 11, it is desirable that the thermal expansion coefficient of the through metal body 11 is close to the thermal expansion coefficient of the insulating base 3. A reliable light-emitting element wiring substrate 1 can be obtained. In particular, the difference in thermal expansion coefficient between the insulating substrate 3 and the through metal body 11 is preferably 4.0 × 10 −6 / ° C. or less, more preferably 2.0 × 10 −6 / ° C. or less, and most preferably. Is preferably 1.0 × 10 −6 / ° C. or less.

また、被覆金属体１３としては、Ｗ、Ｍｏ、Ｃｕ、Ａｇのうち少なくとも１種を主成分として形成することができ、絶縁基体３と同時焼成して、接続端子５、外部電極端子７、貫通導体９、貫通金属体１１を形成することが可能となり、安価な発光素子用配線基板１を迅速に作製することができる。   The coated metal body 13 can be formed of at least one of W, Mo, Cu, and Ag as a main component, and is fired at the same time as the insulating base 3 to form the connection terminal 5, the external electrode terminal 7, and the through-hole. The conductor 9 and the penetrating metal body 11 can be formed, and the inexpensive light-emitting element wiring board 1 can be quickly produced.

なお、被覆金属体１３には、上記の金属に加えて、貫通金属体１１の熱膨張係数、焼結挙動を制御するために無機粉末を含有させることもできる。その含有量は、０〜５質量％の割合が望ましく、高熱伝導率を得るためには、０〜４質量％がより望ましく、好適には０〜３質量％が良い。   In addition to the above metal, the coated metal body 13 can also contain an inorganic powder in order to control the thermal expansion coefficient and sintering behavior of the through metal body 11. The content is preferably 0 to 5% by mass, more preferably 0 to 4% by mass, and preferably 0 to 3% by mass in order to obtain high thermal conductivity.

また、絶縁基体３に用いるセラミックスとして、Ａｌ２Ｏ３、ＭｇＯ、ＡｌＮやＳｉ３Ｎ４などを主結晶とする焼結体を用いても良い。 Further, as the ceramic used for the insulating substrate 3, a sintered body having a main crystal of Al 2 O 3, MgO, AlN, Si 3 N 4 or the like may be used.

特に、この絶縁基体３として、Ａｌ２Ｏ３を主結晶相とするＡｌ２Ｏ３質焼結体を用いた場合には、安価な原料を使用でき、安価な発光素子用配線基板１を得ることができる。 In particular, when an Al 2 O 3 sintered body having Al 2 O 3 as a main crystal phase is used as the insulating base 3, an inexpensive raw material can be used, and an inexpensive wiring board 1 for a light emitting element is obtained. be able to.

なお、Ａｌ２Ｏ３を主結晶相とするＡｌ２Ｏ３質焼結体とは、例えば、Ｘ線回折によって、Ａｌ２Ｏ３のピークが主ピークとして検出されるようなもので、Ａｌ２Ｏ３の結晶を体積比率として、５０体積％以上含有していることが望ましい。 Note that the Al 2 O 3 and Al 2 O 3 quality sintered body composed mainly crystalline phase, for example, by X-ray diffraction, is like the peak of Al 2 O 3 is detected as the main peak, Al 2 It is desirable to contain 50% or more by volume of O 3 crystals.

また、このような焼結体は、例えば、平均粒径１．０〜２．０μｍの純度９９％以上のＡｌ２Ｏ３粉末に、平均粒径１．０〜２．０μｍのＭｎ２Ｏ３、ＳｉＯ２、ＭｇＯ、ＳｒＯ、ＣａＯの群から選ばれる少なくとも１種の焼結助剤を添加した成形体を１３００〜１５００℃の温度範囲で焼成することによって得られるものである。 Moreover, such a sintered compact is made of, for example, Al 2 O 3 powder having an average particle diameter of 1.0 to 2.0 μm and a purity of 99% or more, and Mn 2 O 3 having an average particle diameter of 1.0 to 2.0 μm. , SiO 2 , MgO, SrO, CaO, obtained by firing a molded body to which at least one kind of sintering aid selected from the group consisting of CaO is added in a temperature range of 1300-1500 ° C.

そして、焼結助剤などのＡｌ２Ｏ３以外の組成物の添加量については、Ａｌ２Ｏ３を主結晶とする緻密体を得るために、望ましくは１５質量％以下、更に望ましくは、１０質量％以下とすることが望ましい。特に、焼結助剤などのＡｌ２Ｏ３以外の組成物の添加量を１５質量％以下とした場合には、得られる絶縁基体３の大部分をＡｌ２Ｏ３結晶により形成することができる。また、これらの焼結助剤は、焼成温度を低くするために５質量％以上、さらには７質量％以上添加することが望ましい。 And, for the addition amount of Al 2 O 3 other than the compositions, such as sintering aids, in order to obtain a dense body of the Al 2 O 3 as a main crystal, preferably 15 wt% or less, more desirably, 10 It is desirable to set it as mass% or less. In particular, when the addition amount of a composition other than Al 2 O 3 such as a sintering aid is 15% by mass or less, most of the obtained insulating base 3 can be formed of Al 2 O 3 crystals. . These sintering aids are preferably added in an amount of 5% by mass or more, and more preferably 7% by mass or more in order to lower the firing temperature.

このようなＡｌ２Ｏ３等のセラミックスを主成分とする組成物に、さらに、バインダー、溶剤を添加して、スラリーを作製し、例えば、ドクターブレード法により、シート状の成形体を作製し、さらに、その表面や、シート状の成形体に設けた貫通孔などに、少なくとも金属粉末を含有する導体ペーストを印刷、充填したのち、このシートを積層し、酸化雰囲気、還元雰囲気、あるいは不活性雰囲気で焼成することで、表面や内部に接続端子５や外部電極端子７や貫通導体９などの配線層が形成された発光素子用配線基板１を作製することができる。また、配線層は、薄膜法により絶縁基体３の表面に形成したり、金属箔を成形体の表面に転写するなどして形成できることはいうまでもない。 To such a composition mainly composed of ceramics such as Al 2 O 3 , a binder and a solvent are further added to produce a slurry. For example, a sheet-like molded body is produced by a doctor blade method, Furthermore, after printing and filling a conductive paste containing at least metal powder on the surface or through holes provided in the sheet-like molded body, this sheet is laminated, and an oxidizing atmosphere, a reducing atmosphere, or an inert atmosphere By firing at, the light emitting element wiring board 1 having wiring layers such as the connection terminals 5, the external electrode terminals 7 and the through conductors 9 formed on the surface or inside thereof can be produced. Needless to say, the wiring layer can be formed on the surface of the insulating substrate 3 by a thin film method or by transferring a metal foil onto the surface of the molded body.

そして、このような絶縁基体３ａ、３ｂの表面あるいは内部に、接続端子５、外部電極端子７、貫通導体９、貫通金属体１１を形成することで、発光素子用配線基板１に配線回路を形成することができる。   Then, the connection terminal 5, the external electrode terminal 7, the through conductor 9, and the through metal body 11 are formed on the surface or inside of the insulating bases 3a and 3b, thereby forming a wiring circuit on the light emitting element wiring substrate 1. can do.

かかる貫通金属体１１は、実質的に同一厚みのセラミックグリーンシートと、金属材料または、金属材料とセラミック材料からなる金属シートを作製する工程と、セラミックグリーンシートの所定箇所に貫通孔を形成する工程と、前記貫通孔を形成したセラミックグリーンシートに金属シートを積層する工程と、セラミックグリーンシートにおける貫通孔形成部分を金属シート側から押圧することによって、金属シートの一部を前記貫通孔内に埋め込み、セラミックグリーンシートと金属シートとを一体化した成形体を焼成することで形成できる。   The through metal body 11 includes a step of producing a ceramic green sheet having substantially the same thickness, a metal material or a metal sheet made of a metal material and a ceramic material, and a step of forming a through hole at a predetermined position of the ceramic green sheet. And a step of laminating a metal sheet on the ceramic green sheet in which the through hole is formed, and a part of the metal sheet is embedded in the through hole by pressing the through hole forming portion of the ceramic green sheet from the metal sheet side. It can be formed by firing a molded body in which a ceramic green sheet and a metal sheet are integrated.

なお、この金属シートは、例えば、金属粉末に、必要に応じて樹脂、溶剤やセラミック粉末などを添加したスラリーをドクターブレード法などにより成形することで容易に作製することができる。   In addition, this metal sheet can be easily produced by, for example, forming a slurry obtained by adding a resin, a solvent, a ceramic powder, or the like to a metal powder as necessary, by a doctor blade method or the like.

例えば、先ず、図３（ａ）に示すように、貫通穴５１が形成された下金型５３にセラミックグリーンシート５５を載置して、図３（ｂ）に示すように、上金型５７によりセラミックグリーンシート５５に貫通孔５９を形成した後、上金型５７と不要なセラミックグリーンシート５５ｂを除去する。   For example, first, as shown in FIG. 3A, a ceramic green sheet 55 is placed on a lower mold 53 in which a through hole 51 is formed, and an upper mold 57 is formed as shown in FIG. After forming the through hole 59 in the ceramic green sheet 55, the upper mold 57 and the unnecessary ceramic green sheet 55b are removed.

次に、図３（ｃ）に示すように、貫通孔５９が形成されたセラミックグリーンシート５５ａの上に、セラミックグリーンシート５５ａと略同じ厚みの予め作製しておいた金属シート６１を載置する。   Next, as shown in FIG. 3C, a pre-made metal sheet 61 having the same thickness as the ceramic green sheet 55a is placed on the ceramic green sheet 55a in which the through holes 59 are formed. .

次に、上金型５７により、貫通孔５９と重なる部分の金属シート６１ａを、図３（ｄ）に示すように、貫通孔５９内に押し込み、図４（ｅ）に示すように、上金型５７と不要な金属シート６１ｂとを除去することで、図４（ｆ）に示すようなセラミックグリーンシート５５ａと金属シート６１ａとが一体した複合シート６３を得ることができる。   Next, the upper metal mold 57 pushes the portion of the metal sheet 61a that overlaps the through hole 59 into the through hole 59 as shown in FIG. 3D, and as shown in FIG. By removing the mold 57 and the unnecessary metal sheet 61b, a composite sheet 63 in which the ceramic green sheet 55a and the metal sheet 61a are integrated as shown in FIG. 4F can be obtained.

次に、この複合シート６３に対して、図４（ｇ）に示すように、セラミックス粉末と樹脂とを含有するペーストを印刷して、焼成後に中間層１５となるセラミック層６５を形成する。   Next, as shown in FIG. 4G, a paste containing ceramic powder and resin is printed on the composite sheet 63 to form a ceramic layer 65 that becomes the intermediate layer 15 after firing.

次に、この複合シート６３に対して、図４（ｈ）に示すように、金属粉末と樹脂とを含有する導電ペーストを印刷して、焼成後に被覆金属層１３となる金属ペースト層６６を形成する。   Next, as shown in FIG. 4 (h), a conductive paste containing metal powder and resin is printed on the composite sheet 63 to form a metal paste layer 66 that becomes the coated metal layer 13 after firing. To do.

次に、このようにして作製したセラミック層６５と金属ペースト層６６とを備えた複合シート６３を、図５（ｉ）に示すように積層して、作製した成形体を焼成することで図１に示すような発光素子用配線基板１を容易に作製することができる。   Next, the composite sheet 63 provided with the ceramic layer 65 and the metal paste layer 66 produced in this way is laminated as shown in FIG. The wiring board 1 for light emitting elements as shown in FIG.

また、金属シート６１ａをセラミックグリーンシート５５に押し込むにあたり、貫通孔５９を形成する工程と、金属シート６１ａをセラミックグリーンシート５５に押し込む工程とを同時に行っても良い。   In addition, when the metal sheet 61 a is pushed into the ceramic green sheet 55, the step of forming the through hole 59 and the step of pushing the metal sheet 61 a into the ceramic green sheet 55 may be performed simultaneously.

また、図３〜５では、貫通導体９については触れていないが、必要に応じ、貫通導体９を形成するための貫通孔を設け、導体ペーストをこの貫通孔に充填して、積層体を形成した後、焼成することで貫通導体９を形成することができるのはいうまでもない。   3 to 5, the through conductor 9 is not touched, but if necessary, a through hole for forming the through conductor 9 is provided, and a conductor paste is filled into the through hole to form a laminated body. Then, it goes without saying that the through conductor 9 can be formed by firing.

そして、これらの配線回路に用いる導体および貫通金属体１１を、タングステン、モリブデン、銅および銀のうち少なくとも１種を主成分として形成することで、絶縁基体３と同時焼成して、接続端子５、外部電極端子７、貫通導体９、貫通金属体１１を形成することが可能となり、安価な発光素子用配線基板１を得ることができる。   Then, the conductor and the penetrating metal body 11 used in these wiring circuits are formed by using at least one of tungsten, molybdenum, copper and silver as a main component, so that they are simultaneously fired with the insulating base 3, and the connection terminals 5, The external electrode terminal 7, the through conductor 9, and the through metal body 11 can be formed, and the inexpensive light emitting element wiring substrate 1 can be obtained.

また、接続端子５および貫通金属体１１の表面にＡｌやＡｇめっきを施すことにより、反射率を向上させることができる。   In addition, the reflectance can be improved by applying Al or Ag plating to the surfaces of the connection terminal 5 and the through metal body 11.

また、枠体１９を、セラミックスにより形成することで、絶縁基体３と枠体１９とを同時焼成することができ、工程が簡略化されるため、安価な発光素子用配線基板１を容易に作製することができる。また、セラミックスは耐熱性、耐湿性に優れているため、長期間の使用や、悪条件での使用にも、優れた耐久性を有する発光素子用配線基板１となる。   In addition, since the frame body 19 is formed of ceramics, the insulating base 3 and the frame body 19 can be fired at the same time, and the process is simplified. Therefore, the inexpensive light-emitting element wiring substrate 1 is easily manufactured. can do. Moreover, since ceramics are excellent in heat resistance and moisture resistance, the wiring substrate 1 for light emitting elements has excellent durability even when used for a long period of time or under adverse conditions.

また、安価で、加工性に優れた金属により枠体１９を形成することで、複雑な形状の枠体１９であっても、容易に安価に製造することができ、安価な発光素子用配線基板１を供給することができる。この金属製の枠体１９は、例えば、ＡｌやＦｅ−Ｎｉ−Ｃｏ合金等などにより好適に形成することができる。また、枠体１９の表面には、Ｎｉ、Ａｕ、Ａｇなどからなるめっき層（図示せず）を形成してもよい。   In addition, by forming the frame body 19 from a metal that is inexpensive and excellent in workability, even the frame body 19 having a complicated shape can be easily manufactured at low cost, and the wiring board for a light-emitting element is inexpensive. 1 can be supplied. The metal frame 19 can be suitably formed from, for example, Al, Fe—Ni—Co alloy, or the like. Further, a plating layer (not shown) made of Ni, Au, Ag or the like may be formed on the surface of the frame body 19.

なお、このように枠体１９を金属により形成する場合には、予め、絶縁基体３の主面３ａに金属パターン（図示せず）を形成し、この金属パターンと枠体１９とを、例えば、共晶Ａｇ−Ｃｕろう材等からなるろう材２１を介して、ろう付けすることができる。   When the frame body 19 is formed of a metal in this way, a metal pattern (not shown) is formed in advance on the main surface 3a of the insulating base 3, and the metal pattern and the frame body 19 are, for example, It can braze via the brazing material 21 which consists of eutectic Ag-Cu brazing material etc.

そして、以上説明した本発明の発光素子用配線基板１の搭載部１７に、例えば、図６（ａ）に示すように発光素子２３として、ＬＥＤチップ２３などを搭載し、ボンディングワイヤ２５により発光素子２３に給電することにより、発光素子２３を機能させることができ、発光素子２３からの発熱を貫通金属体から速やかに放出するためことができるため、ヒートシンク等の放熱部材が不要となり、実装される電気機器の小型化に寄与できる。また、発光素子２３は、モールド材２７により被覆することもできる。また、熱膨張係数をプリント基板に近いものとすることにより、プリント基板やモールド材２７との熱膨張係数のミスマッチを抑制できるため、接合信頼性の高い発光装置２９ができる。   Then, for example, an LED chip 23 or the like is mounted on the mounting portion 17 of the light emitting element wiring substrate 1 of the present invention described above as the light emitting element 23 as shown in FIG. Since the light emitting element 23 can be made to function by supplying power to the power supply 23 and the heat generated from the light emitting element 23 can be quickly released from the through metal body, a heat radiating member such as a heat sink becomes unnecessary and is mounted. Contributes to miniaturization of electrical equipment. Further, the light emitting element 23 can be covered with a molding material 27. Further, by making the thermal expansion coefficient close to that of the printed circuit board, mismatching of the thermal expansion coefficient with the printed circuit board and the molding material 27 can be suppressed, so that the light emitting device 29 with high bonding reliability can be obtained.

特に、搭載部１７となる部分の被覆金属層１３が緻密に形成されているため、発光素子２３からの熱を貫通導体１１に速やかに伝達することができる。   In particular, since the covering metal layer 13 of the portion that becomes the mounting portion 17 is densely formed, the heat from the light emitting element 23 can be quickly transferred to the through conductor 11.

この発光素子用配線基板１と発光素子２３との接続には、金属や樹脂からなる接続層３１が用いられる。特に、発光素子２３の熱を貫通金属体１１に効率よく伝達するという観点から、接続層３１として半田、インジウム、ＡｕＳｎ合金などの金属を用いることが望ましい。   A connection layer 31 made of metal or resin is used for connection between the light emitting element wiring substrate 1 and the light emitting element 23. In particular, it is desirable to use a metal such as solder, indium, or AuSn alloy as the connection layer 31 from the viewpoint of efficiently transferring the heat of the light emitting element 23 to the through metal body 11.

なお、本発明においてもヒートシンクを設けることで、更に放熱性が向上することはもちろんであり、例えば、ヒートシンクのような冷却装置を設けることを排除するものではない。   In the present invention, the heat dissipation is further improved by providing the heat sink. For example, it is not excluded to provide a cooling device such as a heat sink.

また、発光素子用配線基板１に形成された搭載部１７に、例えば発光素子として、ＬＥＤチップ２３などを搭載し、ボンディングワイヤ２５により、ＬＥＤチップ２３と接続端子５と電気的に接続して、給電することにより、発光素子２３の放射する光を絶縁基体３や枠体１９に反射させ、所定の方向へと誘導することができるため、高効率の発光装置１５となる。また、絶縁基体３並びに枠体１９の熱伝導率が高いため、発光素子２３からの発熱を速やかに放出することができ、発熱による輝度低下を抑制できる。   Further, for example, an LED chip 23 is mounted as a light emitting element on the mounting portion 17 formed on the light emitting element wiring substrate 1, and the LED chip 23 and the connection terminal 5 are electrically connected by a bonding wire 25. By supplying power, the light emitted from the light-emitting element 23 can be reflected by the insulating base 3 and the frame body 19 and guided in a predetermined direction, so that the highly efficient light-emitting device 15 is obtained. Moreover, since the heat conductivity of the insulating base 3 and the frame 19 is high, heat generated from the light emitting element 23 can be quickly released, and luminance reduction due to heat generation can be suppressed.

また、図６（ｂ）に示すように、発光素子２３を搭載した側の発光素子用配線基板１の主面２ａに、枠体１９を搭載した発光装置１５では、枠体１９の内側に発光素子２３を収納することで、容易に発光素子２３を保護することができる。   Further, as shown in FIG. 6B, in the light emitting device 15 in which the frame body 19 is mounted on the main surface 2 a of the light emitting element wiring substrate 1 on the side where the light emitting element 23 is mounted, light is emitted inside the frame body 19. By housing the element 23, the light emitting element 23 can be easily protected.

なお、図６（ａ）、（ｂ）に示した例では、発光素子２３は、接着剤３１により発光素子用配線基板１に固定され、電力の供給はボンディングワイヤ２５によりなされているが、発光素子用配線基板１との接続形態は、フリップチップ接続であってもよいことはいうまでもない。   In the example shown in FIGS. 6A and 6B, the light emitting element 23 is fixed to the light emitting element wiring substrate 1 by the adhesive 31 and power is supplied by the bonding wire 25. It goes without saying that the connection form with the element wiring board 1 may be flip-chip connection.

また、発光素子２３は、モールド材２７により被覆されているが、モールド材２７を用いずに、蓋体（図示せず）を用いて封止してもよく、また、モールド材２７と蓋体とを併用してもよい。蓋体を用いる場合であって、発光素子２３を用いる場合には蓋体は、ガラスなどの透光性の素材を用いることが望ましい。   Further, although the light emitting element 23 is covered with the molding material 27, it may be sealed with a lid (not shown) without using the molding material 27, or the molding material 27 and the lid And may be used in combination. In the case where the lid is used, and the light emitting element 23 is used, it is desirable that the lid is made of a light-transmitting material such as glass.

なお、発光素子２３を搭載する場合には、必要に応じて、このモールド材２７に発光素子２３が放射する光を波長変換するための蛍光体（図示せず）を添加してもよい。   In addition, when mounting the light emitting element 23, you may add the fluorescent substance (not shown) for wavelength-converting the light which the light emitting element 23 radiates | emits to this molding material 27 as needed.

また、以上説明した例では、貫通導体９を設けた例について説明したが、貫通導体９を設けない場合であってもよく、また、絶縁基体３が多層に積層されている形態であってもよいことは勿論である。   In the example described above, the example in which the through conductor 9 is provided has been described. However, the through conductor 9 may not be provided, and the insulating base 3 may be laminated in multiple layers. Of course it is good.

まず、原料粉末として純度９９％以上、平均粒径が１．５μｍのＡｌ２Ｏ３粉末、純度９９％以上、平均粒子径１．３μｍのＭｎ２Ｏ３粉末、純度９９％以上、平均粒径１．０μｍのＳｉＯ２粉末を用いて、表１に示す割合で原料粉末を混合し、成形用有機樹脂（バインダ）としてアクリル系バインダと、トルエンを溶媒として混合し、スラリーを調整した。 First, Al 2 O 3 powder having a purity of 99% or more and an average particle diameter of 1.5 μm as a raw material powder, Mn 2 O 3 powder having a purity of 99% or more and an average particle diameter of 1.3 μm, a purity of 99% or more, and an average particle diameter A raw material powder was mixed at a ratio shown in Table 1 using 1.0 μm SiO 2 powder, an acrylic binder as a molding organic resin (binder), and toluene as a solvent were mixed to prepare a slurry.

しかる後に、ドクターブレード法にてＡｌ２Ｏ３を主成分とするグリーンシートを作製した。 Thereafter, a green sheet mainly composed of Al 2 O 3 was prepared by a doctor blade method.

これらの表１の組成Ｎｏ．１〜１０の組成を有するセラミック粉末を含有するグリーンシートに対して、それぞれ、表１に示す金属シートと導体ペーストと金属シートと中間層ペーストを作製して組み合わせた。   These composition Nos. With respect to the green sheet containing the ceramic powder which has a composition of 1-10, the metal sheet shown in Table 1, the conductor paste, the metal sheet, and the intermediate | middle layer paste were produced and combined, respectively.

また、金属シートは、表１に示す金属粉末と無機粉末と成形用有機樹脂（バインダ）としてアクリル系バインダと、トルエンを溶媒として混合し、金属シートとなるスラリーを調整した。しかる後に、ドクターブレード法にてグリーンシートと実質的に同一厚みの金属シートを作製した。   Moreover, the metal sheet mixed the metal powder and inorganic powder which are shown in Table 1, acrylic binder as a shaping | molding organic resin (binder), and toluene as a solvent, and adjusted the slurry used as a metal sheet. Thereafter, a metal sheet having substantially the same thickness as the green sheet was produced by a doctor blade method.

また、導体ペーストは、平均粒子径２μｍのＷ、Ｍｏ、Ｃｕ、Ａｇ粉末およびセラミック材料として平均粒子径１．５μｍのＡｌ２Ｏ３粉末、平均粒子径１．５μｍのＳｉＯ２粉末を用いて、表１に示す割合で金属粉末と無機粉末とアクリル系バインダとアセトンとを溶媒として混合して調製した。 In addition, the conductor paste uses W, Mo, Cu, Ag powder having an average particle diameter of 2 μm, and Al 2 O 3 powder having an average particle diameter of 1.5 μm and SiO 2 powder having an average particle diameter of 1.5 μm as ceramic materials A metal powder, an inorganic powder, an acrylic binder, and acetone were mixed as a solvent at a ratio shown in Table 1 to prepare.

中間層ペーストは、セラミックス材料として、表１に示す割合でセラミックス粉末とアクリル系バインダとアセトンとを溶媒として混合して調製した。   The intermediate layer paste was prepared as a ceramic material by mixing ceramic powder, an acrylic binder, and acetone in a proportion shown in Table 1 as a solvent.

次に、上記のセラミックグリーンシートに対して、打ち抜き加工を施し、直径が１００μｍのビアホールを形成し、このビアホール内に、導体ペーストをスクリーン印刷法によって充填するとともに、配線パターン状に印刷塗布した。   Next, the ceramic green sheet was punched to form a via hole having a diameter of 100 μm. The via hole was filled with a conductive paste by a screen printing method and printed and applied in a wiring pattern.

そして、セラミックグリーンシートの所定箇所にφ４．１ｍｍあるいはφ２．７ｍｍの貫通孔を形成し、セラミックグリーンシートにおける貫通孔形成部分を金属シートから押圧することによって、金属シートの一部を貫通孔内に埋め込み、セラミックグリーンシートと金属シートとを一体化した。   Then, through holes of φ4.1 mm or φ2.7 mm are formed at predetermined positions of the ceramic green sheet, and a part of the metal sheet is placed in the through hole by pressing the through hole forming portion of the ceramic green sheet from the metal sheet. Embedded ceramic green sheet and metal sheet were integrated.

このセラミックグリーンシートと金属シートとを一体化したシートに、前記中間層ペーストペーストを、焼成後に貫通金属体の表面から表２に示す厚みおよび中間層面積比になるようにスクリーン印刷法で塗布した。中間層面積比は貫通金属体の断面積に対する中間層塗布面積の比を表し、例えば、中間層面積比０．８は中間層塗布面積が、貫通導体断面積の８０％を意味し、貫通金属体を全て被覆していないことを表す。逆に中間層面積比１．１は中間層塗布面積が、貫通導体断面積の１１０％を意味し、貫通金属体を全て被覆していることを表す。   The intermediate layer paste paste was applied to the sheet obtained by integrating the ceramic green sheet and the metal sheet by screen printing so that the thickness and the intermediate layer area ratio shown in Table 2 were obtained from the surface of the penetrating metal body after firing. . The intermediate layer area ratio represents the ratio of the coated area of the intermediate layer to the cross-sectional area of the through metal body. For example, the intermediate layer area ratio of 0.8 means that the coated area of the intermediate layer represents 80% of the cross-sectional area of the through conductor. Indicates that the entire body is not covered. Conversely, an intermediate layer area ratio of 1.1 means that the intermediate layer application area is 110% of the cross-sectional area of the through conductor, and indicates that the entire through metal body is covered.

この中間層ペーストを印刷したグリーンシートと金属シートとを一体化したシートに、前記導体ペーストを、スクリーン印刷法で塗布し、被覆金属層を形成した。   The conductor paste was applied by a screen printing method to a sheet obtained by integrating the green sheet printed with the intermediate layer paste and the metal sheet to form a coated metal layer.

このようにして作製した金属シートと一体化されグリーンシートあるいは、さらにその上に、中間層、被覆金属層を形成したグリーンシートと、を組み合わせ、位置合わせし、積層圧着し、焼成後に外形１０ｍｍ×１０ｍｍ×厚み０．６ｍｍとなる積層体を作製した。   A green sheet integrated with the metal sheet thus prepared, or a green sheet on which an intermediate layer and a covering metal layer are formed is combined, aligned, laminated and pressure-bonded, and after firing, an outer shape of 10 mm × A laminate having a size of 10 mm × thickness 0.6 mm was produced.

また、枠体をセラミックグリーンシートにより形成する試料については、絶縁基体と枠体とをグリーンシートにて一体物として形成し、同時焼成を行って作製した。   In addition, a sample in which the frame body was formed of a ceramic green sheet was produced by forming the insulating base and the frame body as a single body using a green sheet and performing simultaneous firing.

なお、その枠体と絶縁基体とを同時焼成して作製する試料については、焼成後に、１０ｍｍ×１０ｍｍ×２ｍｍの外形寸法を有し、枠体の発光素子用配線基板の搭載部が形成された側に、絶縁基体と接する側の内径が４ｍｍ、逆側の内径が８ｍｍのテーパー状の貫通穴を有する枠体を形成した。   In addition, about the sample produced by baking the frame and the insulating substrate at the same time, after firing, the outer dimensions of 10 mm × 10 mm × 2 mm were formed, and the mounting portion of the frame light emitting element wiring board was formed. On the side, a frame body having a tapered through hole having an inner diameter of 4 mm on the side in contact with the insulating base and an inner diameter of 8 mm on the opposite side was formed.

そして、露点＋２５℃の窒素水素混合雰囲気にて脱脂を行った後、引き続き、露点＋２５℃の窒素水素混合雰囲気にて１３００〜１５５０℃の最高温度で２時間焼成した。   Then, after degreasing in a nitrogen-hydrogen mixed atmosphere at a dew point of + 25 ° C., it was subsequently baked at a maximum temperature of 1300 to 1550 ° C. for 2 hours in a nitrogen-hydrogen mixed atmosphere at a dew point of + 25 ° C.

こうして、図２に示すような階段状の貫通金属体を有する発光素子用配線基板を作製した。尚、作製した試料の貫通金属体は上層が直径２．３ｍｍ、下層は直径３．５ｍｍである。   Thus, a light emitting element wiring board having a stepped through metal body as shown in FIG. 2 was produced. In addition, the through metal body of the prepared sample has an upper layer of 2.3 mm in diameter and a lower layer of 3.5 mm in diameter.

その後、接続端子並びに外部電極端子の表面にＮｉ、ＡｕおよびＡｇめっきを順次施した。   Thereafter, Ni, Au and Ag plating were sequentially applied to the surfaces of the connection terminal and the external electrode terminal.

また、金属製の枠体としては、熱膨張係数が２３×１０−６／℃、熱伝導率が２３８Ｗ／ｍ・ＫのＡｌ製金属枠体と、熱膨張係数が６×１０−６／℃、熱伝導率が１７Ｗ／ｍ・ＫのＦｅ−Ｎｉ−Ｃｏ合金製金属枠体とを用いた。また、金属製の枠体を設けた発光素子用配線基板については、接続端子並びに外部電極端子を形成する導体ペーストを用いて、絶縁基体の搭載部側の枠体が搭載される部分に金属層を形成したのち、共晶Ａｇ−Ｃｕのロウ材を用いて、８５０℃の条件で、枠体を絶縁基体に接合して作製した。 Moreover, as a metal frame, an Al metal frame having a thermal expansion coefficient of 23 × 10 −6 / ° C. and a thermal conductivity of 238 W / m · K, and a thermal expansion coefficient of 6 × 10 −6 / ° C. A metal frame made of Fe—Ni—Co alloy having a thermal conductivity of 17 W / m · K was used. In addition, for a light emitting element wiring board provided with a metal frame, a metal layer is formed on a portion where the frame on the mounting portion side of the insulating substrate is mounted using a conductive paste that forms connection terminals and external electrode terminals. Then, the frame body was bonded to an insulating substrate under the condition of 850 ° C. using a eutectic Ag—Cu brazing material.

これらの発光素子用配線基板に接着剤として半田を用いて出力１．５Ｗの発光素子であるＬＥＤチップを搭載部に実装し、ボンディングワイヤによりＬＥＤチップと接続端子とを結線し、さらに、ＬＥＤチップと接続端子とを熱膨張係数が４０×１０−６／℃のエポキシ樹脂からなるモールド材で覆い、発光装置を得た。 An LED chip, which is a light emitting element with an output of 1.5 W, is mounted on the mounting portion using solder as an adhesive on the wiring board for these light emitting elements, and the LED chip and the connection terminal are connected by a bonding wire. And the connection terminal were covered with a molding material made of an epoxy resin having a thermal expansion coefficient of 40 × 10 −6 / ° C. to obtain a light emitting device.

評価は、焼成後に得られた発光素子用配線基板の発光素子搭載部の主面表面及び他方の主面表面を双眼顕微鏡にて観察し、変色の有無を確認した。   In the evaluation, the main surface surface of the light emitting element mounting portion and the other main surface surface of the light emitting element wiring board obtained after firing were observed with a binocular microscope to confirm the presence or absence of discoloration.

また、中間層厚みは焼成後に得られた発光素子用配線基板を破断し、ＳＥＭにて測定した。   The intermediate layer thickness was measured by SEM after breaking the light emitting element wiring board obtained after firing.

また、中間層面積比は、主面の表面写真及び主面と並行に研磨して得られた貫通金属体断面写真を画像解析した算出した。   The intermediate layer area ratio was calculated by image analysis of a surface photograph of the main surface and a cross-sectional photograph of the through metal body obtained by polishing in parallel with the main surface.

また、搭載部平坦性は、搭載部を横断するように、被覆金属層の表面を表面粗さ計にて形状測定し、その最高値と最低値の差で表した。なお、表面粗さの測定は、Ｋｏｓａｋａ Ｌａｂｏｒａｔｏｒｙ Ｌｔｄ製のＳｕｒｆｃｏｒｄｅｒ ＳＥ−２３００を用いて、送り速度０．５ｍｍ／秒の条件で行った。   Further, the flatness of the mounting portion was expressed by the difference between the highest value and the lowest value obtained by measuring the shape of the surface of the coated metal layer with a surface roughness meter so as to cross the mounting portion. The surface roughness was measured using Surfcorder SE-2300 manufactured by Kosaka Laboratory Ltd. under a feed rate of 0.5 mm / sec.

また、発光装置に０．４Ａの電流を通電し、全放射束測定を行った。なお、全放射束測定は大塚電子社製の発光特性評価装置を用いて測定した。   Further, a current of 0.4 A was applied to the light emitting device, and the total radiant flux was measured. The total radiant flux measurement was performed using a light emission characteristic evaluation apparatus manufactured by Otsuka Electronics.

得られた絶縁基体を粉砕し、Ｘ線回折により絶縁基体の主結晶相を同定した。 The obtained insulating substrate was pulverized, and the main crystal phase of the insulating substrate was identified by X-ray diffraction.

また、貫通金属体面積比は素子の搭載部への接触面積に対する貫通金属体の断面積の比を表し、例えば、貫通金属体面積比１．２は貫通金属体の断面積が、素子の搭載部への接触面積の１２０％を意味する。   The through metal body area ratio represents the ratio of the cross sectional area of the through metal body to the contact area of the element with the mounting portion. For example, the through metal body area ratio 1.2 is the cross section area of the through metal body, It means 120% of the contact area to the part.

以上の工程により作製した発光素子用配線基板の特性と、試験結果を表２に示す。

Figure 2007123482
Table 2 shows the characteristics and test results of the light-emitting element wiring substrate manufactured through the above steps.
Figure 2007123482

Figure 2007123482
Figure 2007123482

表２に示すように、貫通金属体の表面のうち少なくとも中心部を覆うように配設されたセラミックスを主成分とする中間層がない本発明の範囲外の試料Ｎｏ．９は変色が認められ、ＳＥＭ観察の結果、貫通金属体の中心部が、その周辺部よりもボイドが多く分布していた。   As shown in Table 2, there is no intermediate layer mainly composed of ceramics disposed so as to cover at least the center part of the surface of the penetrating metal body. No. 9 was discolored, and as a result of SEM observation, more voids were distributed in the central part of the penetrating metal body than in the peripheral part.

一方、本発明の試料Ｎｏ．１〜８、１０〜２４は、被覆金属体の表面に変色はなく、ＳＥＭ観察の結果、十分に緻密化していることが判った。また、ＬＥＤチップの過剰な加熱も発生せず、高い発光効率を実現することができた。   On the other hand, sample no. As for 1-8, 10-24, the surface of a covering metal body did not change color, and as a result of SEM observation, it turned out that it was fully densified. Further, excessive heating of the LED chip did not occur, and high luminous efficiency could be realized.

本発明の発光素子用配線基板の断面図である。It is sectional drawing of the wiring board for light emitting elements of this invention. 本発明の発光素子用配線基板の断面図である。It is sectional drawing of the wiring board for light emitting elements of this invention. 本発明の発光素子用配線基板の製造方法を説明するための断面図である。It is sectional drawing for demonstrating the manufacturing method of the wiring board for light emitting elements of this invention. 本発明の発光素子用配線基板の製造方法を説明するための断面図である。It is sectional drawing for demonstrating the manufacturing method of the wiring board for light emitting elements of this invention. 本発明の発光素子用配線基板の製造方法を説明するための断面図である。It is sectional drawing for demonstrating the manufacturing method of the wiring board for light emitting elements of this invention. 本発明の発光装置の断面図である。It is sectional drawing of the light-emitting device of this invention.

符号の説明Explanation of symbols

１・・・発光素子用配線基板
３・・・絶縁基体
５・・・接続端子
７・・・外部電極端子
９・・・貫通導体
１１・・・貫通金属体
１３・・・被覆金属層
１５・・・中間層
１７・・・搭載部
１９・・・枠体
２３・・・発光素子
２７・・・モールド材
１５・・・発光装置
１６・・・接着剤 DESCRIPTION OF SYMBOLS 1 ... Light emitting element wiring board 3 ... Insulation base | substrate 5 ... Connection terminal 7 ... External electrode terminal 9 ... Through-conductor 11 ... Through-metal body 13 ... Covering metal layer 15- .... Intermediate layer 17 ... mounting part 19 ... frame 23 ... light emitting element 27 ... mold material 15 ... light emitting device 16 ... adhesive

Claims (10)

セラミックスからなる絶縁基体と、前記絶縁基体を貫通して設けられ、前記絶縁基板よりも高い熱伝導率を有し、金属を主成分とする貫通金属体と、該貫通金属体および該貫通金属体と前記絶縁基板との境界を越えて前記貫通金属体を被覆するように形成され、金属を主成分とする被覆金属層と、前記貫通金属体の表面の中心部と前記被覆金属層との間に介在するように配設され、セラミックスを主成分とする中間層と、を具備し、前記被覆金属層が発光素子を搭載する搭載部であることを特徴とする発光素子用配線基板。 An insulating base made of ceramics, a penetrating metal body that is provided through the insulating base and has a higher thermal conductivity than the insulating substrate, the main component of which is a metal, the penetrating metal body, and the penetrating metal body And is formed so as to cover the penetrating metal body beyond the boundary between the insulating metal substrate and the metal substrate, and between the central portion of the surface of the penetrating metal body and the covering metal layer. A wiring board for a light-emitting element, comprising: an intermediate layer that is disposed so as to intervene, and wherein the covering metal layer is a mounting portion on which the light-emitting element is mounted. 前記中間層が、前記貫通金属体の表面を完全に覆うように形成されたことを特徴とする請求項１記載の発光素子用配線基板。 The light emitting element wiring board according to claim 1, wherein the intermediate layer is formed so as to completely cover a surface of the penetrating metal body. 前記中間層が、アルミナ、ジルコニア、マグネシア、三酸化二マンガン、カルシアおよびシリカから選ばれる材料を含有してなることを特徴とする請求項１または２に記載の発光素子用配線基板。 The wiring substrate for a light emitting element according to claim 1, wherein the intermediate layer contains a material selected from alumina, zirconia, magnesia, dimanganese trioxide, calcia, and silica. 前記被覆層と前記中間層とが、前記絶縁基体の両主面に形成されていることを特徴とする請求項１乃至３のうちいずれかに記載の発光素子用配線基板。 The light emitting element wiring board according to claim 1, wherein the covering layer and the intermediate layer are formed on both main surfaces of the insulating base. 前記貫通金属体が、前記発光素子用配線基板に搭載される発光素子の搭載面積よりも大きな断面積を有することを特徴とする請求項１乃至４のうちいずれかに記載の発光素子用配線基板。 5. The light-emitting element wiring board according to claim 1, wherein the through metal body has a cross-sectional area larger than a mounting area of a light-emitting element mounted on the light-emitting element wiring board. . 前記貫通金属体が、タングステン、モリブデン、銅および銀のうち少なくとも１種を主成分とすることを特徴とする請求項１乃至５のうちいずれかに記載の発光素子用配線基板。 The light-emitting element wiring substrate according to claim 1, wherein the penetrating metal body contains at least one of tungsten, molybdenum, copper, and silver as a main component. 前記貫通金属体が、セラミックスを含有することを特徴とする請求項１乃至６のうちいずれかに記載の発光素子用配線基板。 The light-emitting element wiring board according to claim 1, wherein the penetrating metal body contains ceramics. 前記発光素子用配線基板の搭載部が形成された側の主面に、発光素子を収容するための枠体が形成されてなることを特徴とする請求項１乃至７のうちいずれかに記載の発光素子用配線基板。 The frame body for accommodating a light emitting element is formed in the main surface of the side in which the mounting part of the said wiring board for light emitting elements was formed, The Claim 1 thru | or 7 characterized by the above-mentioned. Wiring board for light emitting element. 請求項１乃至８のうちいずれかに記載の発光素子用配線基板の搭載部に発光素子を搭載してなることを特徴とする発光装置。 A light emitting device comprising a light emitting element mounted on the mounting portion of the wiring board for a light emitting element according to claim 1. セラミックグリーンシートに略同一厚みの金属シートを、前記セラミックグリーンシートを貫通するように配設して複合成形体を作製する工程と、前記複合成形体の前記金属シートの表面のうち少なくとも中心部を覆うように中間層となるセラミック層を形成する工程と、前記セラミック層を覆うように被覆金属層となる金属ペースト層を形成する工程と、前記セラミック層、前記金属ペースト層を備えた前記複合成形体を焼成する工程と、を具備することを特徴とする発光素子用配線基板の製造方法。

A step of producing a composite molded body by disposing a metal sheet having substantially the same thickness on the ceramic green sheet so as to penetrate the ceramic green sheet, and at least a central portion of the surface of the metal sheet of the composite molded body A step of forming a ceramic layer as an intermediate layer so as to cover; a step of forming a metal paste layer as a covering metal layer so as to cover the ceramic layer; and the composite molding including the ceramic layer and the metal paste layer And a step of firing the body. A method of manufacturing a wiring board for a light-emitting element.

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