JP2007116200A - 量子ダッシュデバイス - Google Patents
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Abstract
【解決手段】 光学的ゲインを提供するための半導体活性領域は、2つの障壁層(290,295)の間に配置され且つ井戸膜厚を持つ実質的プレーナ井戸層を持つ量子井戸(280,285)と、前記量子井戸内に埋め込まれた複数の量子ドット(205)であって、各量子ドットは、前記井戸膜厚よりも薄い厚みを持ち、且つ前記プレーナ井戸層に平行な面における長さ対幅の比が少なくともほぼ3であるものとを具備する。
【選択図】 図2
Description
米国政府は、次の許可の下に行われた研究に従って、この発明において確かな権利を有するかもしれない。空軍科学研究局によって付与された許可番号F49620−95−1−0530、陸軍研究所によって付与された許可番号DAAL01−96−02−0001、空軍科学研究局によって付与された許可番号F4920−99−1−330、防衛進展研究プロジェクトエージェンシーによって付与された許可番号MDA972−98−1−0002。
関 連 出 願
発 明 の 背 景
1. 発明の分野
2. 背景技術の説明
210 基板
280,285 量子井戸層
290,295 障壁層
Claims (16)
- 光学的ゲインを提供するための半導体活性領域であって、
2つの障壁層の間に配置され且つ井戸膜厚を持つ実質的プレーナ井戸層を持つ量子井戸と、
前記量子井戸内に埋め込まれた複数の量子ドットであって、各量子ドットは、前記井戸膜厚よりも薄い厚みを持ち、且つ前記プレーナ井戸層に平行な面における長さ対幅の比が少なくとも3であるものと
を具備することを特徴とする半導体活性領域。 - 前記複数の量子ドットは、連続する不均相系広がりの光学的ゲインスペクトルを形成するように選定された平均的サイズに関してサイズ分布を持つ請求項1に記載の半導体活性領域。
- 前記量子ドットの平均的サイズは、基底状態の光遷移エネルギ値の30meV以内である関連する光遷移エネルギ値を持つ第1の励起量子状態を含むように選定される請求項2に記載の半導体活性領域。
- 前記量子ドットの平均的サイズは、基底状態の光遷移エネルギ値の20meV以内である第1の励起量子状態を含むように選定される請求項2に記載の半導体活性領域。
- 前記量子井戸は歪まされているものである請求項1に記載の半導体活性領域。
- 前記量子ドットは、半導体量子井戸よりもより大きく緩和された格子定数を持つ半導体で構成され、
更に、前記量子ドットに近接して少なくとも1つのテンシル歪み層を具備する請求項1に記載の半導体活性領域。 - 光閉じ込めを提供する光導波路手段と、
150ナノメータより大きな波長範囲にわたって光学的ゲインを提供するように選定されたエネルギ準位を備えた一連の量子閉じ込めエネルギ状態を持つ量子ドット手段と、
前記量子ドット手段に対する注入電流のキャリア閉じ込めを提供する量子井戸手段と
を具備する半導体レーザ。 - 第1の端部と離された第2の端部とを持つ第1の光キャビティと、
前記第1の光キャビティ内に配置された半導体活性領域であって、量子井戸内に埋め込まれた複数の量子ドットを持つと共に、該量子ドットは連続的な光学的ゲインスペクトルを形成するように選定された一連の量子閉じ込めエネルギ状態及びサイズ分布を持つものと、
前記第1の光キャビティの前記第1の端部に光を反射する第1の反射器と、
前記第1の光キャビティの前記第2の端部に選択された波長の光を反射する光学的要素を含む外部の光キャビティと
を具備するチューニング可能なレーザ。 - 前記量子ドットの特性が150ナノメータより大きなチューニング範囲を達成するように選定されることを特徴とする請求項8に記載のチューニング可能なレーザ。
- 前記量子ドットの特性が最小波長の10%より大きなチューニング範囲を達成するように選定されることを特徴とする請求項8に記載のチューニング可能なレーザ。
- 前記量子ドットは、関連する第1の光遷移エネルギ値を持つ基底状態と、関連する第2の光遷移エネルギ値を持つ第1の励起状態とを有し、前記第2の光遷移エネルギ値は前記第1の光遷移エネルギ値より30meV大きい値よりも大きくないことを特徴とする請求項8に記載のチューニング可能なレーザ。
- 第1の端部と離された第2の端部とを持つ第1の光キャビティと、
前記第1の光キャビティ内に配置された量子ドット活性領域手段であって、150ナノメータより大きな波長範囲にわたる光学的ゲインを提供するように選定された得るエネルギ準位を備えた一連の量子閉じ込めエネルギ状態を持つものと、
前記第1の光キャビティの前記第1の端部に光を反射する第1の反射器と、
前記第1の光キャビティの前記第2の端部に選択された波長の光を反射する光学的要素を含む外部の光キャビティと
を具備するチューニング可能なレーザ。 - 基板と、
基板上に形成された、光クラッド層と活性領域とを含む半導体レーザ層構造であって、該活性領域は、量子井戸内に埋め込まれた複数の量子ドットを持つ少なくとも1つのセクション内に配置された半導体活性領域であり、該量子ドットは、連続的な光学的ゲインスペクトルを形成するように選定された一連の量子閉じ込めエネルギ状態及びサイズ分布を持つものと、
前記レーザ層構造上に形成された複数のレーザであって、該複数のレーザの各々が、少なくとも150ナノメータのレーザ波長範囲でその動作波長を調整するように配置されたブラッグ回折格子を有するものと、
を具備するレーザのモノリシック・マルチ波長アレイ。 - 前記ドットは、関連する第1の光遷移エネルギ値を持つ飽和可能な基底状態と、関連する第2の光遷移エネルギ値を持つ第1の励起状態とを有し、前記第2の光遷移エネルギ値は前記第1の光遷移エネルギ値より30meV大きい値よりも大きくないものであることを特徴とする請求項13に記載のアレイ。
- 基板と、
該基板上に配置され、150ナノメータより大きな波長範囲にわたって光学的ゲインスペクトルを提供するための量子ドット活性領域手段と、
前記量子ドット活性領域手段においてキャリアを閉じ込めるための量子井戸手段と、
前記量子ドット活性領域手段上に形成された複数のレーザであって、該複数のレーザの各々が、レーザに光学的フィードバックを提供するように配置された、関連する格子周期を持つブラッグ(Bragg)回折格子を有するものと、
を具備するレーザのモノリシック・マルチ波長アレイ。 - AlGaInAs量子井戸内に埋め込まれる自己集合化されたInGaAs量子ダッシュを成長させる方法であって、
InP基板上に第1のAlGaInAs障壁層を成長させることと、
該第1のAlGaInAs障壁層上に底部AlGaInAs井戸層を成長させることと、
前記基板よりも少なくとも1.8%より多く緩和された格子定数を持つInGaAsにて前記底部AlGaInAs井戸層上にInGaAsを成長させることであって、このInGaAsの成長条件が、長さ対幅の比が少なくとも3にて、厚みと長さと幅とを持つ島になるように、形成配置されるInGaAsの再分布を動的に奨励するように選択されるものと、
AlGaInAsの量子井戸内に前記島を埋め込むように選択された成長条件の下で、頂部AlGaInAs井戸層を成長させることと、
前記頂部AlGaInAs井戸層上に第2のAlGaInAs障壁層を成長させることと
を具備し、前記量子井戸の禁制帯エネルギが前記AlGaInAs障壁層と前記InGaAs島の中間となるようにしたことを特徴とする方法。
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US23434400P | 2000-09-22 | 2000-09-22 | |
US23803000P | 2000-10-06 | 2000-10-06 | |
US25208400P | 2000-11-21 | 2000-11-21 | |
US27230701P | 2001-03-02 | 2001-03-02 | |
US27618601P | 2001-03-16 | 2001-03-16 | |
US31630501P | 2001-08-31 | 2001-08-31 | |
US09/961,560 US6600169B2 (en) | 2000-09-22 | 2001-09-20 | Quantum dash device |
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JP (2) | JP4047718B2 (ja) |
AU (1) | AU2002212973A1 (ja) |
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JP2009088392A (ja) * | 2007-10-02 | 2009-04-23 | Fujitsu Ltd | 半導体発光素子及びその製造方法 |
JP2011216557A (ja) * | 2010-03-31 | 2011-10-27 | Furukawa Electric Co Ltd:The | 面発光レーザ、面発光レーザアレイ、光源、および光モジュール |
JP2013008862A (ja) * | 2011-06-24 | 2013-01-10 | Fujitsu Ltd | 光半導体素子 |
JPWO2012173162A1 (ja) * | 2011-06-13 | 2015-07-30 | 国立大学法人東北大学 | 量子ナノドット、二次元量子ナノドットアレイ及びこれを用いた半導体装置並びに製造方法 |
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US6816525B2 (en) * | 2000-09-22 | 2004-11-09 | Andreas Stintz | Quantum dot lasers |
US6773949B2 (en) * | 2001-07-31 | 2004-08-10 | The Board Of Trustees Of The University Of Illinois | Semiconductor devices and methods |
EP1419519A4 (en) | 2001-07-31 | 2006-12-13 | Univ Illinois | QUANTIC POINT QUANTIC POINT SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME |
US6978070B1 (en) * | 2001-08-14 | 2005-12-20 | The Programmable Matter Corporation | Fiber incorporating quantum dots as programmable dopants |
CA2473396C (en) * | 2002-01-18 | 2009-06-23 | Wisconsin Alumni Research Foundation | High coherent power, two-dimensional surface-emitting semiconductor diode array laser |
US7457340B2 (en) * | 2002-01-18 | 2008-11-25 | Wisconsin Alumni Research Foundation | High coherent power, two-dimensional surface-emitting semiconductor diode array laser |
GB2388707B (en) * | 2002-05-15 | 2005-06-22 | Bookham Technology Plc | Tunable laser |
GB2388957A (en) * | 2002-05-24 | 2003-11-26 | Imp College Innovations Ltd | Quantum dots for extended wavelength operation |
US20040001521A1 (en) * | 2002-06-27 | 2004-01-01 | Ashish Tandon | Laser having active region formed above substrate |
US7229498B2 (en) * | 2002-10-29 | 2007-06-12 | Midwest Research Institute | Nanostructures produced by phase-separation during growth of (III-V)1-x(IV2)x alloys |
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JP2009088392A (ja) * | 2007-10-02 | 2009-04-23 | Fujitsu Ltd | 半導体発光素子及びその製造方法 |
JP2011216557A (ja) * | 2010-03-31 | 2011-10-27 | Furukawa Electric Co Ltd:The | 面発光レーザ、面発光レーザアレイ、光源、および光モジュール |
JPWO2012173162A1 (ja) * | 2011-06-13 | 2015-07-30 | 国立大学法人東北大学 | 量子ナノドット、二次元量子ナノドットアレイ及びこれを用いた半導体装置並びに製造方法 |
JP2013008862A (ja) * | 2011-06-24 | 2013-01-10 | Fujitsu Ltd | 光半導体素子 |
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WO2002025705A2 (en) | 2002-03-28 |
JP4047718B2 (ja) | 2008-02-13 |
WO2002025705A3 (en) | 2003-08-14 |
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WO2002025705A9 (en) | 2002-08-15 |
CA2424468A1 (en) | 2002-03-28 |
IL154997A0 (en) | 2003-10-31 |
US6600169B2 (en) | 2003-07-29 |
CA2424468C (en) | 2008-04-01 |
JP2004525498A (ja) | 2004-08-19 |
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