JP2007088394A5 - - Google Patents

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JP2007088394A5
JP2007088394A5 JP2005278771A JP2005278771A JP2007088394A5 JP 2007088394 A5 JP2007088394 A5 JP 2007088394A5 JP 2005278771 A JP2005278771 A JP 2005278771A JP 2005278771 A JP2005278771 A JP 2005278771A JP 2007088394 A5 JP2007088394 A5 JP 2007088394A5
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temperature
temperature sensor
measured
processing chamber
heating means
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JP2005278771A
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Japanese (ja)
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JP2007088394A (en
JP4878801B2 (en
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Claims (2)

基板を処理する処理室と、
該処理室を加熱する加熱手段と、
前記処理室外に配置され前記加熱手段の温度を測定する第1の温度センサと、
該第1の温度センサよりも前記基板近傍に配置され前記処理室内の温度を測定する第2の温度センサと、
前記第1及び第2の温度センサでそれぞれの測定する温度に基づき前記加熱手段を制御する制御手段とを備え
前記制御手段は、
前記処理室内で設定温度にて基板を処理するよう前記加熱手段を制御している際に、前記第2の温度センサが正常に温度測定できなくなったとき、前記第2の温度センサが正常に温度測定できなくなる前に求めて記憶しておいた前記設定温度にて温度が安定した際の前記第1及び第2の温度センサで測定したそれぞれの温度温度差を、記第2の温度センサで測定する温度と前記設定温度との偏差に基づき第1の演算をすることに替えて、前記記憶された温度差により前記設定温度を補正し、該補正結果と前記第1の温度センサで測定する温度との偏差に基づき第2の演算を行い、該第2の演算結果に基づき前記加熱手段を制御することを特徴とする基板処理装置。
A processing chamber for processing the substrate;
Heating means for heating the processing chamber;
A first temperature sensor arranged outside the processing chamber and measuring the temperature of the heating means;
A second temperature sensor that is disposed near the substrate than the first temperature sensor and measures the temperature in the processing chamber;
Control means for controlling the heating means based on temperatures measured by the first and second temperature sensors ,
The control means includes
When controlling the by cormorants before Symbol heating means for processing the substrate at a set temperature in the processing chamber, can and the second temperature sensor can no longer be properly temperature measurements, normally the second temperature sensor is in each of the temperature difference between the temperature measured by said first and second temperature sensors when the temperature was stable at storage to keep said set temperature determined before can not be temperature measurement, pre Symbol second instead be a temperature measured by a temperature sensor deviations first operation based on the said set temperature, said the set temperature is corrected by the stored temperature difference, the with the correction result first temperature sensor A substrate processing apparatus, wherein a second calculation is performed based on a deviation from the temperature measured in step (b), and the heating unit is controlled based on the second calculation result.
処理室内で設定温度にて基板を処理するよう、加熱手段の温度を測定する第1の温度センサの測定する温度と該第1の温度センサよりも前記基板近傍に配置され前記処理室内の温度を測定する第2の温度センサの測定する温度に基づき前記加熱手段を制御している際に、前記第2の温度センサが正常に温度測定できなくなったとき、該第2の温度センサが正常に温度測定できなくなる前に予め求めて記憶しておいた前記設定温度にて温度が安定した際の前記第1及び第2の温度センサで測定したそれぞれの温度の温度差を、前記第2の温度センサで測定する温度と前記設定温度との偏差に基づき第1の演算をすることに替えて、前記記憶された温度差により前記設定温度を補正し、該補正結果と前記第1の温度センサで測定する温度との偏差に基づき第2の演算を行い、該第2の演算結果に基づき前記加熱手段を制御することを特徴とする半導体装置の製造方法。The temperature measured by the first temperature sensor for measuring the temperature of the heating means and the temperature inside the processing chamber disposed closer to the substrate than the first temperature sensor so as to process the substrate at the set temperature in the processing chamber. When the heating means is controlled based on the temperature measured by the second temperature sensor to be measured and the second temperature sensor becomes unable to measure the temperature normally, the second temperature sensor is normally heated. The temperature difference between the temperatures measured by the first and second temperature sensors when the temperature is stabilized at the set temperature that is obtained and stored in advance before the measurement cannot be performed is the second temperature sensor. Instead of performing the first calculation based on the deviation between the temperature measured in step 1 and the set temperature, the set temperature is corrected by the stored temperature difference, and the correction result and the first temperature sensor are measured. Deviation from temperature The second performs a computation method of manufacturing a semiconductor device, characterized by controlling the heating means based on the second calculation result based.

JP2005278771A 2005-09-26 2005-09-26 Substrate processing apparatus and semiconductor device manufacturing method Active JP4878801B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005278771A JP4878801B2 (en) 2005-09-26 2005-09-26 Substrate processing apparatus and semiconductor device manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005278771A JP4878801B2 (en) 2005-09-26 2005-09-26 Substrate processing apparatus and semiconductor device manufacturing method

Publications (3)

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JP2007088394A JP2007088394A (en) 2007-04-05
JP2007088394A5 true JP2007088394A5 (en) 2008-10-30
JP4878801B2 JP4878801B2 (en) 2012-02-15

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JP2005278771A Active JP4878801B2 (en) 2005-09-26 2005-09-26 Substrate processing apparatus and semiconductor device manufacturing method

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Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5510991B2 (en) * 2007-09-06 2014-06-04 株式会社日立国際電気 Semiconductor manufacturing apparatus and substrate processing method
US8916793B2 (en) 2010-06-08 2014-12-23 Applied Materials, Inc. Temperature control in plasma processing apparatus using pulsed heat transfer fluid flow
US9338871B2 (en) 2010-01-29 2016-05-10 Applied Materials, Inc. Feedforward temperature control for plasma processing apparatus
US8880227B2 (en) * 2010-05-27 2014-11-04 Applied Materials, Inc. Component temperature control by coolant flow control and heater duty cycle control
US10274270B2 (en) 2011-10-27 2019-04-30 Applied Materials, Inc. Dual zone common catch heat exchanger/chiller
JP5539449B2 (en) * 2012-06-29 2014-07-02 東京エレクトロン株式会社 Program, heat treatment apparatus, and operation detection method of heat treatment apparatus
JP7154116B2 (en) * 2018-11-28 2022-10-17 東京エレクトロン株式会社 Raw material tank monitoring device and raw material tank monitoring method
JP6917495B1 (en) 2020-03-04 2021-08-11 株式会社Kokusai Electric Substrate processing equipment, semiconductor equipment manufacturing methods and programs
KR102520584B1 (en) * 2020-10-14 2023-04-10 세메스 주식회사 Process measurement apparatus and method thereof

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09134886A (en) * 1995-11-08 1997-05-20 Kokusai Electric Co Ltd Method for controlling lapping temperature of semiconductor manufacturing equipment
JPH1025577A (en) * 1996-07-12 1998-01-27 Tokyo Electron Ltd Formed film treating device
JP4358915B2 (en) * 1997-03-21 2009-11-04 株式会社日立国際電気 Semiconductor manufacturing system
WO1999059196A1 (en) * 1998-05-11 1999-11-18 Semitool, Inc. Temperature control system for a thermal reactor
JP4286514B2 (en) * 2002-09-27 2009-07-01 株式会社日立国際電気 Semiconductor manufacturing apparatus, temperature control method, and semiconductor manufacturing method
US7006900B2 (en) * 2002-11-14 2006-02-28 Asm International N.V. Hybrid cascade model-based predictive control system
JP2005123308A (en) * 2003-10-15 2005-05-12 Hitachi Kokusai Electric Inc Substrate processor

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