JP2007078543A - Electrode for microdevice and its manufacturing method - Google Patents

Electrode for microdevice and its manufacturing method Download PDF

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JP2007078543A
JP2007078543A JP2005267788A JP2005267788A JP2007078543A JP 2007078543 A JP2007078543 A JP 2007078543A JP 2005267788 A JP2005267788 A JP 2005267788A JP 2005267788 A JP2005267788 A JP 2005267788A JP 2007078543 A JP2007078543 A JP 2007078543A
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electrode
microdevice
hole
substrate
conductor film
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JP4665682B2 (en
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Kenichi Yoshimi
健一 吉見
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Shimadzu Corp
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of an electrode for a microdevice capable of enhancing durability, and the electrode for the microdevice. <P>SOLUTION: A through-hole (2) is provided to a substrate (1) by sandblasting processing and the overhang part (1o) formed to the upper edge of the through-hole (2) is irradiated with a laser beam (B) to be removed. Thereafter, the conductor film continued to the upper surface of the substrate from the side surface of the through-hole (2) is formed. Since the overhang part (1o) is removed by laser ablation processing, a part becoming a shade when the conductor film is formed by a sputtering film forming method is not formed. Accordingly, an extremely thin area which restricts life is not formed and sufficient durability is obtained. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は、マイクロデバイス用電極の製造方法およびマイクロデバイス用電極に関し、さらに詳しくは、耐久性を向上することが出来るマイクロデバイス用電極の製造方法およびマイクロデバイス用電極に関する。   The present invention relates to a method for manufacturing a microdevice electrode and a microdevice electrode, and more particularly, to a method for manufacturing a microdevice electrode capable of improving durability and a microdevice electrode.

従来、液溜めの内部から外部につながる電極（電気泳動チップの泳動電極）や、貼り合わせた２枚の基板の一方に貫通穴を設けてその底部から側面を経由して上面に連続する電極（ガス検出器やガス流量計の信号引出電極）や、閉じた微小なキャビティから気密を保ちながら信号線を引き出す電極のようなマイクロデバイス用電極を製造する場合、サンドブラスト加工によって貫通穴を開け、その貫通穴の側面から基板上面または基板下面に連続した導体膜をスパッタ成膜や蒸着などによって形成している（例えば、特許文献１参照。）。   Conventionally, an electrode (electrophoresis electrode of an electrophoresis chip) connected from the inside of a liquid reservoir to the outside, or an electrode (through electrode formed on one side of two bonded substrates and continuous from the bottom to the top via the side surface ( When manufacturing microdevice electrodes, such as gas extraction electrodes for gas detectors and gas flowmeters) and electrodes that draw out signal wires while maintaining airtightness from closed microcavities, through holes are made by sandblasting, A conductor film that is continuous from the side surface of the through hole to the upper surface or the lower surface of the substrate is formed by sputtering or vapor deposition (see, for example, Patent Document 1).

特開２００３−３４４３４１号公報JP 2003-344341 A

サンドブラスト加工によってガラスなどの脆性材料に貫通穴を開けると、加工中に穴の中で噴射剤の還流が発生する。この噴射剤の還流によって、穴の上縁のすぐ下がえぐられ、オーバーハング部が形成される。
しかし、このオーバーハング部が形成されると、スパッタ成膜などによって導体膜を形成する際に影となる部分が生じるため、その影となる部分での導体膜が極端に薄くなり、それによって寿命が制限され、十分な耐久性が得られない問題点があった。
そこで、本発明の目的は、耐久性を向上することが出来るマイクロデバイス用電極の製造方法およびマイクロデバイス用電極を提供することにある。 When a through hole is made in a brittle material such as glass by sandblasting, the propellant reflux occurs in the hole during processing. Due to the reflux of the propellant, the bottom edge of the hole is removed and an overhang portion is formed.
However, when this overhang part is formed, a shadowed part is formed when the conductor film is formed by sputtering film formation or the like, and therefore the conductor film in the shadowed part becomes extremely thin, thereby resulting in a lifetime. However, there is a problem that sufficient durability cannot be obtained.
Accordingly, an object of the present invention is to provide a method for manufacturing a microdevice electrode and a microdevice electrode that can improve durability.

第１の観点では、本発明は、基板にサンドブラスト加工によって貫通穴を開け、前記貫通穴の上縁に形成されたオーバーハング部にレーザ光を照射して除去した後、前記貫通穴の側面から基板上面まで連続した導体膜を形成することを特徴とするマイクロデバイス用電極の製造方法を提供する。
上記第１の観点によるマイクロデバイス用電極の製造方法では、オーバーハング部にレーザアブレーション加工を施して除去するため、スパッタ成膜などによって導体膜を形成する際に影となる部分が生じない。従って、寿命を制限する極端に薄い箇所が導体膜に発生せず、十分な耐久性が得られるようになる。 In a first aspect, the present invention provides a method for forming a through hole in a substrate by sandblasting, removing an overhang formed on an upper edge of the through hole by irradiating a laser beam, and then removing the through hole from a side surface of the through hole. Provided is a method for producing an electrode for a microdevice, characterized in that a conductor film continuous to the upper surface of a substrate is formed.
In the microdevice electrode manufacturing method according to the first aspect, since the overhang portion is removed by laser ablation, a shadowed portion does not occur when the conductor film is formed by sputtering film formation or the like. Therefore, an extremely thin portion that limits the lifetime does not occur in the conductor film, and sufficient durability can be obtained.

第２の観点では、本発明は、前記第１の観点によるマイクロデバイス用電極の製造方法において、前記マイクロデバイス用電極が電気泳動チップの泳動電極であり、前記導体膜が前記貫通穴の側面の一部から基板上面まで連続した導体膜であることを特徴とするマイクロデバイス用電極の製造方法を提供する。
上記第２の観点によるマイクロデバイス用電極の製造方法では、十分な耐久性を持つ電気泳動チップの泳動電極を製造できる。 In a second aspect, the present invention provides the method for manufacturing a microdevice electrode according to the first aspect, wherein the microdevice electrode is an electrophoresis electrode of an electrophoresis chip, and the conductor film is formed on a side surface of the through hole. Provided is a method for producing an electrode for a microdevice, which is a conductive film continuous from a part to the upper surface of a substrate.
In the microdevice electrode manufacturing method according to the second aspect, the electrophoresis electrode of the electrophoresis chip having sufficient durability can be manufactured.

第３の観点では、本発明は、前記第１の観点によるマイクロデバイス用電極の製造方法において、前記マイクロデバイス用電極がガス検出器やガス流量計の信号引出電極であり、前記導体膜が前記貫通穴の側面の全面から基板上面および基板下面まで連続した導体膜であることを特徴とするマイクロデバイス用電極の製造方法を提供する。
上記第３の観点によるマイクロデバイス用電極の製造方法では、十分な耐久性を持つガス検出器やガス流量計の信号引出電極を製造できる。 In a third aspect, the present invention provides the method for manufacturing a microdevice electrode according to the first aspect, wherein the microdevice electrode is a signal extraction electrode of a gas detector or a gas flow meter, and the conductor film is the Provided is a method for manufacturing an electrode for a microdevice, which is a conductive film continuous from the entire side surface of a through hole to the upper surface and the lower surface of the substrate.
In the method for manufacturing a microdevice electrode according to the third aspect, it is possible to manufacture a signal extraction electrode of a gas detector or a gas flow meter having sufficient durability.

第４の観点では、本発明は、上縁を面取りされた貫通穴を開けられた基板と、前記貫通穴の側面から基板上面まで連続して形成された導体膜とを具備したことを特徴とするマイクロデバイス用電極を提供する。
上記第４の観点によるマイクロデバイス用電極では、貫通穴の上縁が面取りされているため、スパッタ成膜などによって導体膜を形成する際に影となる部分が生じない。従って、寿命を制限する極端に薄い箇所が導体膜に発生せず、十分な耐久性が得られる。 In a fourth aspect, the present invention comprises a substrate having a through hole chamfered at an upper edge, and a conductor film continuously formed from a side surface of the through hole to the upper surface of the substrate. An electrode for a microdevice is provided.
In the microdevice electrode according to the fourth aspect, since the upper edge of the through hole is chamfered, a shadowed portion does not occur when the conductor film is formed by sputtering film formation or the like. Therefore, an extremely thin portion that limits the lifetime does not occur in the conductor film, and sufficient durability can be obtained.

第５の観点では、本発明は、前記第４の観点によるマイクロデバイス用電極において、前記マイクロデバイス用電極が電気泳動チップの泳動電極であり、前記導体膜が前記貫通穴の側面の一部から基板上面まで連続した導体膜であることを特徴とするマイクロデバイス用電極を提供する。
上記第５の観点によるマイクロデバイス用電極では、十分な耐久性を持つ電気泳動チップの泳動電極となる。 In a fifth aspect, the present invention provides the microdevice electrode according to the fourth aspect, wherein the microdevice electrode is an electrophoresis electrode of an electrophoresis chip, and the conductor film is formed from a part of a side surface of the through hole. Provided is a microdevice electrode characterized by being a conductor film continuous up to the upper surface of a substrate.
The microdevice electrode according to the fifth aspect is an electrophoresis electrode of an electrophoresis chip having sufficient durability.

第６の観点では、本発明は、前記第４の観点によるマイクロデバイス用電極の製造方法において、前記マイクロデバイス用電極がガス検出器やガス流量計の信号引出電極であり、前記導体膜が前記貫通穴の側面の全面から基板上面および基板下面まで連続した導体膜であることを特徴とするマイクロデバイス用電極を提供する。
上記第６の観点によるマイクロデバイス用電極では、十分な耐久性を持つガス検出器やガス流量計の信号引出電極となる。 In a sixth aspect, the present invention provides the method for producing a microdevice electrode according to the fourth aspect, wherein the microdevice electrode is a signal extraction electrode of a gas detector or a gas flow meter, and the conductor film is the Provided is a microdevice electrode characterized by being a conductive film continuous from the entire side surface of a through hole to the upper surface and the lower surface of the substrate.
The electrode for a micro device according to the sixth aspect is a signal extraction electrode of a gas detector or a gas flow meter having sufficient durability.

本発明のマイクロデバイス用電極の製造方法およびマイクロデバイス用電極によれば、耐久性を向上することが出来る。   According to the method for manufacturing a microdevice electrode and the microdevice electrode of the present invention, durability can be improved.

以下、図に示す実施例により本発明をさらに詳細に説明する。なお、これにより本発明が限定されるものではない。   Hereinafter, the present invention will be described in more detail with reference to the embodiments shown in the drawings. Note that the present invention is not limited thereby.

図１は、実施例１に係るマイクロデバイス用電極の製造方法の手順を示すフロー図である。
ステップＲ１では、図２に示す如き厚さ１ｍｍの石英ガラス製の基板１に、サンドブラスト加工によって、図３に示す如き直径２ｍｍ程度の貫通穴２を開ける。
この加工中に穴の中で噴射剤の還流が発生し、穴の上縁のすぐ下がえぐられ、その結果、貫通穴２の上縁にオーバーハング部１ｏが形成される。噴射剤の噴出条件に依存するが、オーバーハング部１ｏは、３０〜５０μｍ程度である。 FIG. 1 is a flowchart illustrating a procedure of a method for manufacturing a microdevice electrode according to the first embodiment.
In step R1, a through hole 2 having a diameter of about 2 mm as shown in FIG. 3 is formed in a quartz glass substrate 1 having a thickness of 1 mm as shown in FIG. 2 by sandblasting.
During this processing, propellant recirculation occurs in the hole, and the upper edge of the hole is directly underneath. As a result, an overhang portion 1o is formed at the upper edge of the through hole 2. Although depending on the ejection conditions of the propellant, the overhang portion 1o is about 30 to 50 μm.

図１に戻り、ステップＲ２では、図４に示すようにスポット径０.１〜０.３ｍｍに集光したＣＯ2レーザビームＢで貫通穴２の上縁に沿ってスキャンし、オーバーハング部１ｏをアブレーションする。なお、同じ軌道で複数回スキャンしてもよいし、一部をオーバーラップさせた異なる軌道でスキャンを繰り返してもよい。
このレーザアブレーション加工によりオーバーハング部１ｏは除去され、図５に示すように貫通穴２の上縁が微小な面取り部１ｒとなる。 Returning to FIG. 1, in step R2, as shown in FIG. 4, the CO 2 laser beam B focused to a spot diameter of 0.1 to 0.3 mm is scanned along the upper edge of the through hole 2, and the overhang portion 1o is scanned. Ablate. Note that scanning may be performed a plurality of times on the same trajectory, or scanning may be repeated on different trajectories that are partially overlapped.
By this laser ablation processing, the overhang portion 1o is removed, and the upper edge of the through hole 2 becomes a minute chamfered portion 1r as shown in FIG.

図１に戻り、ステップＲ３では、図６に示すように貫通穴２の側面２ｓの一部から基板上面１ｔに連続した導体膜３をスパッタ成膜や蒸着などにより形成する。
このマイクロデバイス用電極１０は、十分な耐久性を持つ電気泳動チップの泳動電極となる。 Returning to FIG. 1, in step R3, as shown in FIG. 6, a conductor film 3 continuous from a part of the side surface 2s of the through hole 2 to the substrate upper surface 1t is formed by sputtering film deposition or vapor deposition.
The microdevice electrode 10 serves as an electrophoresis electrode of an electrophoresis chip having sufficient durability.

以上により製造されたマイクロデバイス用電極１０によれば、貫通穴２の上縁が面取り部１ｒになっていることで、導体膜３をスパッタ成膜などにより形成する際にターゲット等から影となる部分が生じず、導体膜３に極端に薄い箇所が生じない。よって、耐久性を向上できる。   According to the microdevice electrode 10 manufactured as described above, since the upper edge of the through hole 2 is the chamfered portion 1r, it becomes a shadow from the target or the like when the conductor film 3 is formed by sputtering film formation or the like. A portion does not occur, and an extremely thin portion does not occur in the conductor film 3. Therefore, durability can be improved.

図７に示すように、貫通穴２の側面２ｓをレーザアブレーション加工してもよい。
すなわち、貫通穴２の側面２ｓは、サンドブラスト加工面であるため、１０μｍオーダーの複雑な凹凸がある荒れた面である。このため、側面２ｓにも、スパッタ成膜などにより導体膜３を形成する際に影となる部分が生じる。そこで、側面２ｓにもレーザアブレーション加工を施すことにより、側面２ｓが滑らかになるため、影となる部分がなくなり、導体膜３に極端に薄い箇所が生じない。よって、耐久性を向上できる。 As shown in FIG. 7, the side surface 2s of the through hole 2 may be laser ablated.
That is, since the side surface 2s of the through hole 2 is a sandblasted surface, it is a rough surface with complex irregularities on the order of 10 μm. For this reason, a shadowed portion is formed on the side surface 2s when the conductor film 3 is formed by sputtering film formation or the like. Therefore, by performing laser ablation processing also on the side surface 2 s, the side surface 2 s becomes smooth, so there is no shadowed portion, and no extremely thin portion is generated on the conductor film 3. Therefore, durability can be improved.

図８に示すように、基板１の両面からスパッタ成膜や蒸着などを行い、貫通穴２の側面２ｓから基板上面１ｔおよび基板下面１ｂに連続した導体膜３を形成してもよい。
このマイクロデバイス用電極２０は、十分な耐久性を持つガス検出器やガス流量計の信号引出電極となる。 As shown in FIG. 8, the conductive film 3 may be formed continuously from the side surface 2 s of the through hole 2 to the substrate upper surface 1 t and the substrate lower surface 1 b by performing sputtering film formation or vapor deposition from both surfaces of the substrate 1.
The microdevice electrode 20 serves as a signal extraction electrode of a gas detector or a gas flow meter having sufficient durability.

本発明のマイクロデバイス用電極は、電気泳動チップの泳動電極やガス検出器やガス流量計の信号引出電極などに利用される。   The electrode for a microdevice of the present invention is used for an electrophoresis electrode of an electrophoresis chip, a signal extraction electrode of a gas detector or a gas flow meter, and the like.

実施例１に係るマイクロデバイス用電極の製造方法の手順を示すフロー図である。FIG. 3 is a flowchart showing a procedure of a method for manufacturing a microdevice electrode according to Example 1. サンドブラスト加工前の基板を示す断面図である。It is sectional drawing which shows the board | substrate before sandblasting. サンドブラスト加工後の基板を示す断面図である。It is sectional drawing which shows the board | substrate after sandblasting. レーザアブレーション加工中の基板を示す断面図である。It is sectional drawing which shows the board | substrate in a laser ablation process. レーザアブレーション加工後の基板を示す断面図である。It is sectional drawing which shows the board | substrate after a laser ablation process. 実施例１に係るマイクロデバイス用電極を示す断面図である。1 is a cross-sectional view showing an electrode for a micro device according to Example 1. FIG. 実施例２に係るレーザアブレーション加工中の基板を示す断面図である。It is sectional drawing which shows the board | substrate in the laser ablation process which concerns on Example 2. FIG. 実施例３に係るマイクロデバイス用電極を示す断面図である。6 is a cross-sectional view showing a microdevice electrode according to Example 3. FIG.

符号の説明Explanation of symbols

１ 基板
１ｂ 基板下面
１ｒ 面取り部
１ｔ 基板上面
１ｏ オーバーハング部
２ 貫通穴
２ｓ 側面
３ 導体膜
１０，２０ マイクロデバイス用電極 1 Substrate 1b Substrate lower surface 1r Chamfered portion 1t Substrate upper surface 1o Overhang portion 2 Through hole 2s Side surface 3 Conductive film 10, 20 Micro device electrode

Claims (6)

基板にサンドブラスト加工によって貫通穴を開け、前記貫通穴の上縁に形成されたオーバーハング部にレーザ光を照射して除去した後、前記貫通穴の側面から基板上面まで連続した導体膜を形成することを特徴とするマイクロデバイス用電極の製造方法。 A through-hole is formed in the substrate by sandblasting, and after removing the overhang portion formed on the upper edge of the through-hole by irradiating a laser beam, a continuous conductor film is formed from the side surface of the through-hole to the upper surface of the substrate. A method for producing an electrode for a microdevice. 請求項１に記載のマイクロデバイス用電極の製造方法において、前記マイクロデバイス用電極が電気泳動チップの泳動電極であり、前記導体膜が前記貫通穴の側面の一部から基板上面まで連続した導体膜であることを特徴とするマイクロデバイス用電極の製造方法。 2. The method for manufacturing a microdevice electrode according to claim 1, wherein the microdevice electrode is an electrophoretic electrode of an electrophoresis chip, and the conductor film is continuous from a part of a side surface of the through hole to an upper surface of the substrate. A method for producing an electrode for a microdevice, which is characterized in that: 請求項１に記載のマイクロデバイス用電極の製造方法において、前記マイクロデバイス用電極がガス検出器やガス流量計の信号引出電極であり、前記導体膜が前記貫通穴の側面の全面から基板上面および基板下面まで連続した導体膜であることを特徴とするマイクロデバイス用電極の製造方法。 2. The method of manufacturing a microdevice electrode according to claim 1, wherein the microdevice electrode is a signal extraction electrode of a gas detector or a gas flow meter, and the conductive film extends from the entire side surface of the through hole to the upper surface of the substrate and A method for producing an electrode for a micro device, characterized in that the conductive film is continuous to the lower surface of the substrate. 上縁を面取りされた貫通穴を開けられた基板と、前記貫通穴の側面から基板上面まで連続して形成された導体膜とを具備したことを特徴とするマイクロデバイス用電極。 An electrode for a micro device, comprising: a substrate having a chamfered through hole with a chamfered upper edge; and a conductor film continuously formed from a side surface of the through hole to the upper surface of the substrate. 請求項４に記載のマイクロデバイス用電極において、前記マイクロデバイス用電極が電気泳動チップの泳動電極であり、前記導体膜が前記貫通穴の側面の一部少なくとも上半分から基板上面まで連続した導体膜であることを特徴とするマイクロデバイス用電極。 5. The electrode for a micro device according to claim 4, wherein the electrode for a micro device is an electrophoresis electrode of an electrophoresis chip, and the conductor film is continuous from a part of at least an upper half of a side surface of the through hole to an upper surface of the substrate. The electrode for microdevices characterized by the above-mentioned. 請求項４に記載のマイクロデバイス用電極の製造方法において、前記マイクロデバイス用電極がガス検出器やガス流量計の信号引出電極であり、前記導体膜が前記貫通穴の側面の全面から基板上面および基板下面まで連続した導体膜であることを特徴とするマイクロデバイス用電極。 5. The method of manufacturing a microdevice electrode according to claim 4, wherein the microdevice electrode is a signal extraction electrode of a gas detector or a gas flow meter, and the conductor film extends from the entire side surface of the through hole to the upper surface of the substrate. An electrode for a micro device, characterized in that it is a conductor film continuous to the lower surface of the substrate.
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JP2000162177A (en) * 1998-11-25 2000-06-16 Shimadzu Corp Electrophoretic chip
JP2000310615A (en) * 1999-02-26 2000-11-07 Hitachi Chem Co Ltd Chip for electrophoresis, its manufacture, electrophoresis device and chargeable material separating method using the same
JP2002303605A (en) * 2001-04-04 2002-10-18 Shimadzu Corp Method for sample pretreatment and chip for electrophoresis
JP2003344341A (en) * 2002-05-31 2003-12-03 Shimadzu Corp Gas detector
JP2004069430A (en) * 2002-08-05 2004-03-04 Mitsubishi Kagaku Iatron Inc Chip for electrophoresis, method for production thereof and method for separating substance

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08178897A (en) * 1994-12-27 1996-07-12 Shimadzu Corp Electrophoresis apparatus
JP2000162177A (en) * 1998-11-25 2000-06-16 Shimadzu Corp Electrophoretic chip
JP2000310615A (en) * 1999-02-26 2000-11-07 Hitachi Chem Co Ltd Chip for electrophoresis, its manufacture, electrophoresis device and chargeable material separating method using the same
JP2002303605A (en) * 2001-04-04 2002-10-18 Shimadzu Corp Method for sample pretreatment and chip for electrophoresis
JP2003344341A (en) * 2002-05-31 2003-12-03 Shimadzu Corp Gas detector
JP2004069430A (en) * 2002-08-05 2004-03-04 Mitsubishi Kagaku Iatron Inc Chip for electrophoresis, method for production thereof and method for separating substance

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