JP2007073889A

JP2007073889A - Thermoelectric conversion device

Info

Publication number: JP2007073889A
Application number: JP2005262277A
Authority: JP
Inventors: Takaya Nagahisa; 堅也永久; Ken Sasaki; 謙佐々木; Kyota Chiyonobu; 恭太千代延
Original assignee: Chugoku Electric Power Co Inc
Current assignee: Chugoku Electric Power Co Inc
Priority date: 2005-09-09
Filing date: 2005-09-09
Publication date: 2007-03-22

Abstract

<P>PROBLEM TO BE SOLVED: To provide a thermoelectric conversion device in which thermal stress is suppressed while sustaining thermoelectric conversion efficiency. <P>SOLUTION: The thermoelectric conversion device comprises at least a pair of P type semiconductor element 20 and N type semiconductor element 10 for thermoelectric conversion juxtaposed between heat exchange substrate 1 and 2 opposing each other, electrode plates 30, 40 and 50 interposed between one substrate and the element and between the other substrate and the element in order to connect the P type and N type elements alternately in series, through holes 10b and 20b penetrating from one substrate to the other through the electrode plate and the P type element 20 and penetrating from one substrate to the other through the electrode plate and the N type element 10, a rod member of a bolt 60a inserted into the through holes 10b and 20b while insulated from the inner circumferential surface thereof, a nut 60b coupled with the opposite ends of the rod member through the opposite ends of the through hole such that the element and an opposing electrode plate are pressed, and a spring 70 interposed between one end of the through hole and a press member such that the element and an opposing electrode plate are pressed slidably. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は、熱エネルギー及び電気エネルギーを相互に変換する熱電変換装置に関する。 The present invention relates to a thermoelectric conversion device that mutually converts heat energy and electric energy.

いわゆるペルチェ効果を利用して電気エネルギーを熱エネルギーに変換したり、いわゆるゼーベック効果を利用して熱エネルギーを電気エネルギーに変換したりする熱電変換素子が知られている。例えばゼーベック効果を利用する場合、異なる２種類の金属やＰ型半導体及びＮ型半導体等の熱電変換素子を熱的に並列に配置し、これらの素子を電気的に直列に接続し外部に負荷を接続して閉回路を構成することにより、この閉回路に電流が流れ、電力として取り出すことができる。このような構成によれば、例えば高温流体及び低温流体の温度差に基づいて熱電発電が可能となる（例えば、特許文献１参照。）。 Thermoelectric conversion elements that convert electrical energy into thermal energy using the so-called Peltier effect, or convert thermal energy into electrical energy using the so-called Seebeck effect are known. For example, when using the Seebeck effect, thermoelectric conversion elements such as two different types of metals, P-type semiconductors, and N-type semiconductors are arranged in parallel thermally, and these elements are electrically connected in series to load the outside. By connecting and configuring a closed circuit, a current flows through the closed circuit and can be taken out as electric power. According to such a configuration, for example, thermoelectric power generation is possible based on a temperature difference between a high-temperature fluid and a low-temperature fluid (see, for example, Patent Document 1).

図８を参照しつつ、熱交換器に配設されて熱電発電装置となる熱電変換装置９００の構成例について説明する。同図は、熱電変換装置９００の構成例を説明するための単位ユニットの側部断面図である。この熱電変換装置９００は、主として、少なくとも一対のＮ型半導体素子９１０及びＰ型半導体素子９２０と、これらを交互に直列接続する電極板９３０、９４０、９５０と、を備えて構成されるものである。このようなπ型構造を有する２つの半導体素子９１０、９２０及び３つの電極板９３０、９４０、９５０を単位ユニットとして、複数個の単位ユニットが直列接続されることにより、実際の熱電変換装置９００が構成される。以下、この単位ユニットの構成について更に詳しく述べる。 With reference to FIG. 8, a configuration example of a thermoelectric conversion device 900 that is disposed in a heat exchanger and serves as a thermoelectric power generation device will be described. The figure is a side sectional view of a unit unit for explaining a configuration example of the thermoelectric conversion device 900. The thermoelectric conversion device 900 is mainly configured to include at least a pair of N-type semiconductor elements 910 and P-type semiconductor elements 920 and electrode plates 930, 940, and 950 that alternately connect them in series. . By using two semiconductor elements 910, 920 and three electrode plates 930, 940, 950 having such a π-type structure as unit units, a plurality of unit units are connected in series, so that an actual thermoelectric conversion device 900 can be obtained. Composed. Hereinafter, the configuration of the unit unit will be described in more detail.

同図に例示されるように、前述した単位ユニットにおいて、Ｎ型半導体素子９１０及びＰ型半導体素子９２０は、熱交換器における高温側の金属基板９１及び低温側の金属基板９２の間に並設されている。電極板９３０は低温側の金属基板９２とＮ型半導体素子９１０との間に介在し、電極板９４０は低温側の金属基板９２とＰ型半導体素子９２０との間に介在し、電極板９５０は高温側の金属基板９１と２つの半導体素子９１０、９２０との間に介在している。 As illustrated in the figure, in the unit unit described above, the N-type semiconductor element 910 and the P-type semiconductor element 920 are arranged in parallel between the high-temperature side metal substrate 91 and the low-temperature side metal substrate 92 in the heat exchanger. Has been. The electrode plate 930 is interposed between the low temperature side metal substrate 92 and the N-type semiconductor element 910, the electrode plate 940 is interposed between the low temperature side metal substrate 92 and the P type semiconductor element 920, and the electrode plate 950 is It is interposed between the metal substrate 91 on the high temperature side and the two semiconductor elements 910 and 920.

また、同図に例示されるように、電極板９３０、９４０、９５０は、金属基板９１、９２に対して電気的絶縁性を有する接着剤９８０により固着されている。一方、この電極板９３０、９４０、９５０は、２つの半導体素子９１０、９２０に対して半田（又は銀ロウ）９９０によりろう接されている。尚、電極板９３０、９４０、９５０と、２つの半導体素子９１０、９２０とは、例えば溶射により融接されている場合もある。 Further, as illustrated in the figure, the electrode plates 930, 940, 950 are fixed to the metal substrates 91, 92 with an adhesive 980 having electrical insulation. On the other hand, the electrode plates 930, 940, 950 are soldered to the two semiconductor elements 910, 920 by solder (or silver solder) 990. The electrode plates 930, 940, 950 and the two semiconductor elements 910, 920 may be fused together by, for example, thermal spraying.

以上の構成により、高温側の金属基板９１及び低温側の金属基板９２の温度差に基づいて、電流は、電極板９３０、Ｎ型半導体素子９１０、電極板９５０、Ｐ型半導体素子９２０、電極板９４０の順に流れる（図８の矢印）。尚、熱電冷却装置としての構成例についても上記と同様である。
特開平１１−１７２３４号公報 With the above configuration, based on the temperature difference between the high-temperature side metal substrate 91 and the low-temperature side metal substrate 92, the current is applied to the electrode plate 930, the N-type semiconductor element 910, the electrode plate 950, the P-type semiconductor element 920, and the electrode plate. It flows in the order of 940 (arrow in FIG. 8). The configuration example as the thermoelectric cooling device is the same as above.
Japanese Patent Laid-Open No. 11-17234

ところで、前述した構成を備えた熱電変換装置９００には、対向する金属基板９１、９２の熱膨張及び熱収縮に伴う変形により熱応力が発生し易い。例えば、高温側の金属基板９１が熱膨張する際、銅板等からなる電極板９５０及び半田（又は銀ロウ）９９０も略同様に熱膨張する。一方、Ｎ型半導体素子９１０及びＰ型半導体素子９２０は、金属よりも熱膨張係数が小さいことが多いため、電極板９５０及び半田（又は銀ロウ）９９０とは膨張率が異なる。このため、半導体素子９１０、９２０、電極板９５０、及び半田（又は銀ロウ）９９０には、図８におけるＸＹ面に沿って熱応力が作用する。このような熱応力が繰り返し作用した場合、電極板９５０及び半田（又は銀ロウ）９９０よりも機械的強度が弱いＮ型半導体素子９１０及びＰ型半導体素子９２０に先ずクラックが発生し、このクラックが伸展して破断に至り、結果的に熱電変換装置９００の寿命が短くなる虞がある。このような問題は、低温側の金属基板９２が熱収縮した場合にも同様に発生する。但し、半田（又は銀ロウ）９９０は、Ｎ型半導体素子９１０及びＰ型半導体素子９２０と、電極板９３０、９４０、９５０との間の電流の経路を確保し、熱電変換装置９００の起電力を保持する（即ち、熱電変換効率を維持する）ためには依然重要な役割を有する。 By the way, in the thermoelectric conversion apparatus 900 having the above-described configuration, thermal stress is likely to be generated due to deformation accompanying thermal expansion and thermal contraction of the opposing metal substrates 91 and 92. For example, when the metal substrate 91 on the high temperature side thermally expands, the electrode plate 950 made of a copper plate or the like and the solder (or silver solder) 990 also thermally expand. On the other hand, since the N-type semiconductor element 910 and the P-type semiconductor element 920 often have a smaller coefficient of thermal expansion than metal, the coefficient of expansion is different from that of the electrode plate 950 and the solder (or silver solder) 990. Therefore, thermal stress acts on the semiconductor elements 910 and 920, the electrode plate 950, and the solder (or silver solder) 990 along the XY plane in FIG. When such a thermal stress is repeatedly applied, cracks are first generated in the N-type semiconductor element 910 and the P-type semiconductor element 920, which have lower mechanical strength than the electrode plate 950 and the solder (or silver solder) 990. There exists a possibility that it may extend | expand and it may fracture | rupture and, as a result, the lifetime of the thermoelectric conversion apparatus 900 may become short. Such a problem also occurs when the low-temperature metal substrate 92 is thermally contracted. However, the solder (or silver solder) 990 secures a current path between the N-type semiconductor element 910 and the P-type semiconductor element 920 and the electrode plates 930, 940, 950, and generates the electromotive force of the thermoelectric conversion device 900. It still has an important role to maintain (ie, maintain thermoelectric conversion efficiency).

本発明はかかる課題に鑑みてなされたものであり、その目的とするところは、熱電変換装置の熱電変換効率を維持しつつ熱応力を抑制することにある。 This invention is made | formed in view of this subject, The place made into the objective is to suppress a thermal stress, maintaining the thermoelectric conversion efficiency of a thermoelectric conversion apparatus.

前記課題を解決するための発明は、対向する熱交換基板の間に並設される少なくとも一対の熱電変換用のＰ型半導体素子及びＮ型半導体素子と、一方の前記熱交換基板と前記Ｐ型半導体素子及び前記Ｎ型半導体素子との間と、他方の前記熱交換基板と前記Ｐ型半導体素子及び前記Ｎ型半導体素子との間とに介在し、前記Ｐ型半導体素子及び前記Ｎ型半導体素子を交互に直列接続する電極板と、前記一方の熱交換基板から前記他方の熱交換基板まで前記電極板及び前記Ｐ型半導体素子を介して貫通し、前記一方の熱交換基板から前記他方の熱交換基板まで前記電極板及び前記Ｎ型半導体素子を介して貫通する貫通孔と、前記貫通孔に挿入される棒部材と、前記Ｐ型半導体素子及び前記Ｎ型半導体素子と、当該Ｐ型半導体素子及び当該Ｎ型半導体素子と対向する前記電極板とが圧着するように、対向する前記熱交換基板の外側で前記棒部材の両端と結合される圧着部材と、前記Ｐ型半導体素子及び前記Ｎ型半導体素子と、当該Ｐ型半導体素子及び当該Ｎ型半導体素子と対向する前記電極板とが摺動可能に圧着するように、少なくとも一方の前記熱交換基板の外側と前記圧着部材との間に介在する弾性部材と、を備えてなる熱電変換装置である。 The invention for solving the above problems includes at least a pair of P-type semiconductor elements and N-type semiconductor elements for thermoelectric conversion arranged in parallel between opposing heat exchange boards, one of the heat exchange boards and the P type. The P-type semiconductor element and the N-type semiconductor element are interposed between the semiconductor element and the N-type semiconductor element and between the other heat exchange substrate and the P-type semiconductor element and the N-type semiconductor element. Electrode plates alternately connected in series, the one heat exchange substrate to the other heat exchange substrate through the electrode plate and the P-type semiconductor element, and the one heat exchange substrate to the other heat exchange A through-hole penetrating through the electrode plate and the N-type semiconductor element to the replacement substrate; a rod member inserted into the through-hole; the P-type semiconductor element and the N-type semiconductor element; and the P-type semiconductor element And the N-type semiconductor A crimping member coupled to both ends of the rod member on the outside of the opposing heat exchange substrate so that the electrode plate facing the child is crimped; the P-type semiconductor element and the N-type semiconductor element; An elastic member interposed between at least one outer side of the heat exchange substrate and the pressure-bonding member so that the P-type semiconductor element and the electrode plate facing the N-type semiconductor element are slidably pressure-bonded; Is a thermoelectric conversion device.

この熱電変換装置によれば、貫通孔及び棒部材により対向して保持される電極板とＰ型半導体素子及びＮ型半導体素子とは、圧着部材により、この棒部材の方向に圧着される。この圧着がより強くなれば、例えば、低温側の電極板ＡからＮ型半導体素子へ流れる電流、Ｎ型半導体素子から高温側の電極板Ｂへ流れる電流、電極板ＢからＰ型半導体素子へ流れる電流、Ｐ型半導体素子から低温側の電極板Ｃへ流れる電流、はより大きくなる。これにより、対向する熱交換基板の間の温度差に応じて生じる電極板Ａ及びＣの間の起電力もより大きくなる。尚、このようなゼーベック効果のみならず、ペルチェ効果も含めて、本発明では熱電変換効率が向上すると言える。また、この熱電変換装置によれば、貫通孔及び棒部材により対向して保持される電極板とＰ型半導体素子及びＮ型半導体素子とは、弾性部材により、この棒部材と交差する方向に摺動可能となる。 According to this thermoelectric conversion device, the electrode plate, the P-type semiconductor element, and the N-type semiconductor element that are held opposite to each other by the through hole and the bar member are crimped in the direction of the bar member by the crimping member. If this pressure bonding becomes stronger, for example, a current that flows from the low temperature side electrode plate A to the N type semiconductor element, a current that flows from the N type semiconductor element to the high temperature side electrode plate B, and a current that flows from the electrode plate B to the P type semiconductor element. The current, the current flowing from the P-type semiconductor element to the electrode plate C on the low temperature side, becomes larger. Thereby, the electromotive force between the electrode plates A and C generated according to the temperature difference between the opposing heat exchange substrates is further increased. It can be said that the thermoelectric conversion efficiency is improved in the present invention including not only the Seebeck effect but also the Peltier effect. In addition, according to this thermoelectric conversion device, the electrode plate, the P-type semiconductor element, and the N-type semiconductor element that are held opposite to each other by the through hole and the rod member are slid in the direction intersecting the rod member by the elastic member. It becomes possible to move.

よって、もしこの弾性部材の弾性力がより大きくなれば、前述した圧着がより強くなることにより熱電変換効率がより大きくなる。一方、もしこの弾性部材の弾性力がより小さくなれば、前述した圧着がより弱くなることにより、電極板Ａ、Ｂ、Ｃと、Ｐ型半導体素子及びＮ型半導体素子との熱膨張差による熱応力が、電極板Ａ、Ｂ、Ｃと、Ｐ型半導体素子及びＮ型半導体素子との相互の摺動に吸収されてより小さくなる。 Therefore, if the elastic force of the elastic member becomes larger, the above-described pressure bonding becomes stronger, and the thermoelectric conversion efficiency becomes higher. On the other hand, if the elastic force of the elastic member becomes smaller, the above-described pressure bonding becomes weaker, and thus heat due to the thermal expansion difference between the electrode plates A, B, and C and the P-type semiconductor element and the N-type semiconductor element. The stress is absorbed by the sliding of the electrode plates A, B, and C with the P-type semiconductor element and the N-type semiconductor element, and becomes smaller.

従って、弾性部材の弾性力を所定のレベルに設定することにより、前述した圧着及び摺動のバランスをとることができる。つまり、弾性部材の弾性力を、熱電変換装置の熱電変換効率を維持しつつ熱応力を抑制するように設定することができる。 Therefore, by setting the elastic force of the elastic member to a predetermined level, the above-described pressure bonding and sliding can be balanced. That is, the elastic force of the elastic member can be set so as to suppress the thermal stress while maintaining the thermoelectric conversion efficiency of the thermoelectric conversion device.

また、かかる熱電変換装置において、前記電極板に対する前記Ｐ型半導体素子及び前記Ｎ型半導体素子の圧着面と、前記Ｐ型半導体素子及び前記Ｎ型半導体素子に対する前記電極板の圧着面とのうち、一方の前記圧着面は凸面であり、他方の前記圧着面は凹面である、ことが好ましい。
この熱電変換装置によれば、凹面及び凸面は、例えば平坦な圧着面どうしに比べて接触面積が大きい。これにより、電極板とＰ型半導体素子及びＮ型半導体素子との接触抵抗がより小さくなるため、熱電変換効率がより大きくなる。 Further, in the thermoelectric conversion device, of the pressure-bonding surface of the P-type semiconductor element and the N-type semiconductor element to the electrode plate, and the pressure-bonding surface of the electrode plate to the P-type semiconductor element and the N-type semiconductor element, One of the pressure-bonding surfaces is preferably a convex surface, and the other pressure-bonding surface is preferably a concave surface.
According to this thermoelectric conversion device, the concave surface and the convex surface have a larger contact area than, for example, flat crimp surfaces. Thereby, the contact resistance between the electrode plate, the P-type semiconductor element, and the N-type semiconductor element becomes smaller, and the thermoelectric conversion efficiency becomes larger.

また、かかる熱電変換装置において、前記貫通孔は、挿入された前記棒部材との間に隙間を有することが好ましい。
この熱電変換装置によれば、電極板とＰ型半導体素子及びＮ型半導体素子とは、この隙間の分だけ相互に摺動可能となるため、前述した熱応力がより抑制される。 In this thermoelectric conversion device, it is preferable that the through hole has a gap between the inserted rod member.
According to this thermoelectric conversion device, the electrode plate, the P-type semiconductor element, and the N-type semiconductor element can slide relative to each other by this gap, and thus the above-described thermal stress is further suppressed.

また、かかる熱電変換装置において、前記電極板は、隣接する前記Ｐ型半導体素子及び前記Ｎ型半導体素子の間に、前記熱交換基板の膨張及び収縮を吸収するための撓み部を有することが好ましい。
この熱電変換装置によれば、もし熱交換基板が電極板よりも熱膨張した場合、この撓み部が例えば熱交換基板の面に交差する方向に沿って縮むことにより、この熱膨張が電極板とＰ型半導体素子及びＮ型半導体素子との圧着面に影響を及ぼすことを防止できる。或いは、熱交換基板が電極板よりも熱収縮した場合、この撓み部が例えば熱交換基板の面に交差する方向に沿って伸びることにより、この熱収縮が電極板とＰ型半導体素子及びＮ型半導体素子との圧着面に影響を及ぼすことを防止できる。よって、この圧着面に作用し得る熱応力がより抑制される。 In the thermoelectric conversion device, the electrode plate preferably includes a bending portion for absorbing expansion and contraction of the heat exchange substrate between the adjacent P-type semiconductor element and the N-type semiconductor element. .
According to this thermoelectric conversion device, if the heat exchange substrate expands more than the electrode plate, the flexure shrinks along the direction intersecting the surface of the heat exchange substrate, for example, so that this thermal expansion is It is possible to prevent the pressure bonding surface between the P-type semiconductor element and the N-type semiconductor element from being affected. Alternatively, when the heat exchange substrate is heat-shrinked more than the electrode plate, the bent portion extends along, for example, a direction intersecting the surface of the heat exchange substrate, so that the heat shrinkage is caused by the electrode plate, the P-type semiconductor element, and the N-type. It is possible to prevent the crimping surface with the semiconductor element from being affected. Therefore, the thermal stress that can act on the crimping surface is further suppressed.

また、かかる熱電変換装置において、前記熱交換基板と前記電極板との間は、絶縁性潤滑材で絶縁されることが好ましい。
この熱電変換装置によれば、電極板と熱交換基板との間の相互の変位がより円滑になるため、熱交換基板の熱膨張又は熱収縮が電極板とＰ型半導体素子及びＮ型半導体素子との圧着面に影響を及ぼすことが防止される。よって、この圧着面に作用し得る熱応力がより抑制される。 In the thermoelectric conversion device, it is preferable that the heat exchange substrate and the electrode plate are insulated with an insulating lubricant.
According to this thermoelectric conversion device, since the mutual displacement between the electrode plate and the heat exchange substrate becomes smoother, the thermal expansion or contraction of the heat exchange substrate causes the electrode plate, the P-type semiconductor element, and the N-type semiconductor element. It is prevented from affecting the crimping surface. Therefore, the thermal stress that can act on the crimping surface is further suppressed.

また、かかる熱電変換装置において、前記Ｐ型半導体素子及び前記Ｎ型半導体素子と対向しない側の前記熱交換基板の面は、前記圧着部材が当該面から退避するための凹部を有する、ことが好ましい。
この熱電変換装置によれば、熱交換基板を備える例えば熱交換器が嵩高いものとなることを防止できる。 In this thermoelectric conversion device, it is preferable that the surface of the heat exchange substrate on the side not facing the P-type semiconductor element and the N-type semiconductor element has a recess for the crimping member to retreat from the surface. .
According to this thermoelectric conversion device, for example, a heat exchanger provided with a heat exchange substrate can be prevented from becoming bulky.

また、かかる熱電変換装置において、前記弾性部材は、対向する前記熱交換基板のうち、低温側となる一方の前記熱交換基板の外側と、前記圧着部材との間に介在する、ことが好ましい。
この熱電変換装置によれば、弾性部材の高温劣化が防止される。また、弾性力の調整等の目的で弾性部材にアクセスし易くなる。 Moreover, in this thermoelectric conversion device, it is preferable that the elastic member is interposed between the outer side of the one heat exchange substrate on the low temperature side among the heat exchange substrates facing each other and the pressure-bonding member.
According to this thermoelectric conversion device, high temperature deterioration of the elastic member is prevented. In addition, the elastic member can be easily accessed for the purpose of adjusting the elastic force.

また、かかる熱電変換装置において、前記貫通孔の内周面は、絶縁材で被覆されることが好ましい。
これにより、複数の電極板の間で、Ｐ型半導体素子及びＮ型半導体素子以外のものにより電気的に短絡する虞が無くなる。 In this thermoelectric conversion device, it is preferable that the inner peripheral surface of the through hole is covered with an insulating material.
As a result, there is no risk of electrical short-circuiting between the plurality of electrode plates due to other than the P-type semiconductor element and the N-type semiconductor element.

また、かかる熱電変換装置において、前記棒部材は、絶縁材で被覆された部材、又は、絶縁材からなる部材の何れかであることが好ましい。
これにより、複数の電極板の間で、Ｐ型半導体素子及びＮ型半導体素子以外のものにより電気的に短絡する虞が無くなる。 In the thermoelectric conversion device, the rod member is preferably either a member covered with an insulating material or a member made of an insulating material.
As a result, there is no risk of electrical short-circuiting between the plurality of electrode plates due to other than the P-type semiconductor element and the N-type semiconductor element.

また、かかる熱電変換装置において、前記Ｐ型半導体素子は、対向する前記熱交換基板のうち、高温側となる一方の前記熱交換基板の側の第１のＰ型半導体素子と、対向する前記熱交換基板のうち、低温側となる他方の前記熱交換基板の側の第２のＰ型半導体素子と、が電極板を介して前記圧着部材により圧着されてなるカスケード型半導体素子であり、前記Ｎ型半導体素子は、前記高温側となる一方の熱交換基板の側の第１のＮ型半導体素子と、前記低温側となる他方の熱交換基板の側の第２のＮ型半導体素子と、が電極板を介して前記圧着部材により圧着されてなるカスケード型半導体素子であり、前記第１のＰ型半導体素子及び前記第１のＮ型半導体素子の熱電変換効率は、前記高温側において前記低温側よりも高く、前記第２のＰ型半導体素子及び前記第２のＮ型半導体素子の熱電変換効率は、前記低温側において前記高温側よりも高い、ことが好ましい。
これにより、熱電変換装置の熱電変換効率がより向上する。 Further, in the thermoelectric conversion device, the P-type semiconductor element includes the heat that faces the first P-type semiconductor element on the side of the one heat exchange board that is on a high temperature side among the heat exchange boards that face each other. A cascade type semiconductor element in which the second P-type semiconductor element on the side of the other heat exchange board on the low-temperature side among the exchange boards is crimped by the crimping member via an electrode plate; The type N semiconductor element includes a first N type semiconductor element on the side of the one heat exchange substrate on the high temperature side and a second N type semiconductor element on the side of the other heat exchange substrate on the low temperature side. It is a cascade type semiconductor element that is crimped by the crimping member through an electrode plate, and the thermoelectric conversion efficiency of the first P-type semiconductor element and the first N-type semiconductor element is the low temperature side at the high temperature side. Higher than the second P-type The thermoelectric conversion efficiency of the conductive element and the second N-type semiconductor element is higher than the high temperature side in the low temperature side, it is preferable.
Thereby, the thermoelectric conversion efficiency of a thermoelectric conversion apparatus improves more.

熱電変換装置の熱電変換効率を維持しつつ熱応力を抑制できる。 Thermal stress can be suppressed while maintaining the thermoelectric conversion efficiency of the thermoelectric converter.

＝＝＝熱電変換装置の構成＝＝＝
以下、図面を参照しつつ、本実施の形態の熱電変換装置１００’、１００”、１００の構成例について説明する。尚、各部材の番号に関して、同一の部材には同じ番号が付されている。 === Configuration of Thermoelectric Converter ===
Hereinafter, a configuration example of the thermoelectric conversion devices 100 ′, 100 ″, and 100 according to the present embodiment will be described with reference to the drawings. Note that the same numbers are assigned to the same members. .

＜＜＜第１の実施の形態＞＞＞
図１に例示されるように、本実施の形態の熱電変換装置１００’は、少なくとも一対の熱電変換用のＮ型半導体素子１０’及びＰ型半導体素子２０’と、電極板３０’、４０’、５０’と、貫通孔１ｂ’、２ｂ’、１０ｂ’、２０ｂ’と、ボルト・ナット（棒部材、圧着部材）６０と、バネ（弾性部材）７０と、を備えて構成される熱電発電装置である。尚、図１は、本実施の形態の熱電変換装置１００’の構成例を説明するための単位ユニットの側部断面図である。 <<<< first embodiment >>>>
As illustrated in FIG. 1, the thermoelectric conversion device 100 ′ of the present embodiment includes at least a pair of N-type semiconductor element 10 ′ and P-type semiconductor element 20 ′ for thermoelectric conversion, and electrode plates 30 ′ and 40 ′. , 50 ′, through-holes 1 b ′, 2 b ′, 10 b ′, 20 b ′, bolts and nuts (rod members, pressure-bonding members) 60, and springs (elastic members) 70. It is. FIG. 1 is a side cross-sectional view of a unit unit for explaining a configuration example of a thermoelectric conversion device 100 ′ of the present embodiment.

本実施の形態のＮ型半導体素子１０’及びＰ型半導体素子２０’は、例えば直方体形状をなし、上下方向（Ｚ軸方向）に貫通孔１０ｂ’、２０ｂ’を有する半導体素子である。これらの半導体素子１０’、２０’は、本実施の形態の熱交換器の対向する高温側基板１’（熱交換基板、＋Ｚ側）及び低温側基板２’（熱交換基板、−Ｚ側）の間に並設され、本実施の形態の熱電変換装置１００’の単位ユニットを構成するものである。 The N-type semiconductor element 10 ′ and the P-type semiconductor element 20 ′ of the present embodiment are semiconductor elements that have, for example, a rectangular parallelepiped shape and have through holes 10 b ′ and 20 b ′ in the vertical direction (Z-axis direction). These semiconductor elements 10 ′ and 20 ′ include a high temperature side substrate 1 ′ (heat exchange substrate, + Z side) and a low temperature side substrate 2 ′ (heat exchange substrate, −Z side) of the heat exchanger of the present embodiment. Are arranged in parallel, and constitute a unit unit of the thermoelectric conversion device 100 ′ of the present embodiment.

本実施の形態の電極板３０’は、低温側基板２’とＮ型半導体素子１０’の下部との間に介在する銅板であるとともに、当該単位ユニットに隣接する単位ユニットの電極（当該単位ユニットの電極板４０’に対応する）をなす銅板でもある。本実施の形態の電極板４０’は、低温側基板２’とＰ型半導体素子２０’の下部との間に介在する銅板であるとともに、当該単位ユニットに隣接する単位ユニットの電極（当該単位ユニットの電極板３０’に対応する）をなす銅板でもある。本実施の形態の電極板５０’は、高温側基板１’とＮ型半導体素子１０’及びＰ型半導体素子２０’の上部との間に介在する銅板である。これらの電極板３０’、４０’、５０’は、Ｎ型半導体素子１０’及びＰ型半導体素子２０’を、Ｎ・Ｐ・Ｎ・Ｐ・・・等と交互に直列接続するためのものである。 The electrode plate 30 ′ of the present embodiment is a copper plate interposed between the low temperature side substrate 2 ′ and the lower part of the N-type semiconductor element 10 ′, and the electrode of the unit unit adjacent to the unit unit (the unit unit) And a copper plate corresponding to the electrode plate 40 '. The electrode plate 40 ′ of the present embodiment is a copper plate interposed between the low temperature side substrate 2 ′ and the lower portion of the P-type semiconductor element 20 ′, and the electrode of the unit unit adjacent to the unit unit (the unit unit) (Which corresponds to the electrode plate 30 '). The electrode plate 50 ′ of the present embodiment is a copper plate interposed between the high temperature side substrate 1 ′ and the upper portions of the N-type semiconductor element 10 ′ and the P-type semiconductor element 20 ′. These electrode plates 30 ′, 40 ′, 50 ′ are for connecting the N-type semiconductor element 10 ′ and the P-type semiconductor element 20 ′ alternately in series with N, P, N, P,. is there.

また、本実施の形態の電極板３０’、４０’、５０’は、基板１’、２’の面に対して、窒化ホウ素（ＢＮ）粒子等の固体潤滑性物質（絶縁性潤滑材）８０’を介して電気的絶縁性を保持しつつ設けられている。尚、これに限定されるものではなく、電極板３０’、４０’、５０’と基板１’、２’の面との間には、一般に電気的絶縁体が介在していればよい。但し、潤滑性を有する物質を用いた方が、電極板３０’、４０’、５０’と基板１’、２’の面との間のＸＹ面に沿った相互の変位がより円滑になる。 Further, the electrode plates 30 ′, 40 ′, 50 ′ of the present embodiment are solid lubricants (insulating lubricants) 80 such as boron nitride (BN) particles with respect to the surfaces of the substrates 1 ′, 2 ′. It is provided while maintaining electrical insulation through. However, the present invention is not limited to this, and an electrical insulator may generally be interposed between the electrode plates 30 ′, 40 ′, 50 ′ and the surfaces of the substrates 1 ′, 2 ′. However, when a material having lubricity is used, the mutual displacement along the XY plane between the electrode plates 30 ′, 40 ′, 50 ′ and the surfaces of the substrates 1 ′, 2 ′ becomes smoother.

更に、本実施の形態の電極板３０’、４０’、５０’は、前述した貫通孔１０ｂ’、２０ｂ’に対応する貫通孔（不図示）を上下方向に有する。 Further, the electrode plates 30 ′, 40 ′, 50 ′ of the present embodiment have through holes (not shown) corresponding to the above-described through holes 10 b ′, 20 b ′ in the vertical direction.

また更に、本実施の形態の電極板３０’、４０’、５０’と、Ｎ型半導体素子１０’及びＰ型半導体素子２０’の圧着面との間には半田や銀ろう等は介在せず、バネ７０の付勢により機械的に圧着されているものとする。 Furthermore, no solder or silver solder is interposed between the electrode plates 30 ′, 40 ′, 50 ′ of the present embodiment and the crimp surfaces of the N-type semiconductor element 10 ′ and the P-type semiconductor element 20 ′. It is assumed that they are mechanically pressed by the bias of the spring 70.

本実施の形態の貫通孔１ｂ’、１０ｂ’、２ｂ’は、電極板５０’及び電極板３０’の貫通孔（不図示）とともに、２つの基板１’、２’間を貫通する貫通孔を構成するものである。この構成は、貫通孔１ｂ’、２０ｂ’、２ｂ’についても同様である。 The through holes 1b ′, 10b ′, 2b ′ of the present embodiment are through holes that penetrate between the two substrates 1 ′, 2 ′ together with through holes (not shown) of the electrode plate 50 ′ and the electrode plate 30 ′. It constitutes. This configuration is the same for the through holes 1b ', 20b', 2b '.

本実施の形態のボルト６０ａは、前述した貫通孔１ｂ’、２ｂ’、１０ｂ’、２０ｂ’ の内周面と電気的に絶縁されるとともに当該貫通孔１ｂ’、２ｂ’、１０ｂ’、２０ｂ’に挿入される棒部（棒部材）と、高温側基板１に対してその貫通孔１ｂ’の開口部に当接する頭部（圧着部材）と、を有する部材である。このボルト６０ａの棒部における頭部と反対側の先端部分には、本実施の形態のナット（圧着部材）６０ｂが噛合するためのネジ（不図示）が形成されている。この先端部分には、低温側基板２の外側（−Ｚ側）に設けられたバネ（弾性部材）７０を介して、ナット６０ｂが噛合している。このバネ７０が介在するボルト・ナット６０により、Ｎ型半導体素子１０’と、電極板３０’及び電極板５０’とは、その圧着面において圧着されるとともに、ＸＹ面に沿った相互の摺動が可能となる。同様に、Ｐ型半導体素子２０’と、電極板４０’及び電極板５０’とは、その圧着面において圧着されるとともに、ＸＹ面に沿った相互の摺動が可能となる。 The bolt 60a of the present embodiment is electrically insulated from the inner peripheral surfaces of the above-described through holes 1b ′, 2b ′, 10b ′, 20b ′ and the through holes 1b ′, 2b ′, 10b ′, 20b ′. And a head (crimping member) that comes into contact with the opening of the through-hole 1b ′ with respect to the high-temperature substrate 1. A screw (not shown) for engaging with the nut (crimp member) 60b of the present embodiment is formed at the tip of the rod portion of the bolt 60a opposite to the head portion. A nut 60b is engaged with the tip portion via a spring (elastic member) 70 provided on the outside (−Z side) of the low temperature side substrate 2. The N-type semiconductor element 10 ′, the electrode plate 30 ′ and the electrode plate 50 ′ are crimped on the crimping surfaces by the bolts and nuts 60 in which the springs are interposed, and are slid along each other along the XY plane. Is possible. Similarly, the P-type semiconductor element 20 ′, the electrode plate 40 ′, and the electrode plate 50 ′ are crimped on their crimping surfaces, and can slide relative to each other along the XY plane.

尚、本実施の形態では、貫通孔１ｂ’、２ｂ’、１０ｂ’、２０ｂ’の径と、ボルト６０ａの棒部の径とは、当該貫通孔及び棒部の間に隙間が形成されるように設定されている。電極板３０’、４０’、５０’と半導体素子１０’、２０’とは、この隙間の分だけ相互に摺動可能となる。 In the present embodiment, the diameters of the through holes 1b ′, 2b ′, 10b ′, and 20b ′ and the diameter of the rod portion of the bolt 60a are such that a gap is formed between the through hole and the rod portion. Is set to The electrode plates 30 ′, 40 ′, 50 ′ and the semiconductor elements 10 ′, 20 ′ can slide relative to each other by this gap.

また、本実施の形態では、貫通孔１ｂ’、２ｂ’、１０ｂ’、２０ｂ’の内面と、ボルト６０ａの棒部とは相互に電気的絶縁性を有している必要がある上に、熱電変換装置１００’の熱電変換効率を向上させるべく、高温側基板１’及び低温側基板２’の間には熱伝導性の媒体をできるだけ介在させない方が良い。このため、例えば、ボルト６０ａの少なくとも棒部には、電気的絶縁性を有し且つ熱伝導性の低い材質を用いることが好ましい。このようなボルト・ナット６０として例えばポリイミド樹脂製のものが挙げられる。或いは、例えば、貫通孔１ｂ’、２ｂ’、１０ｂ’、２０ｂ’の内周面又はボルト６０ａの棒部が、電気的絶縁性を有するチューブ等で被覆されている場合には、この棒部は、熱伝導性が低ければ、たとえ電気伝導性が高い材質であってもよい。この場合、ボルト・ナット６０には例えばＳＵＳ等の金属製のものが使用できるため、前述したポリイミド樹脂製のものに比べて部材の調達が容易になる。 In the present embodiment, the inner surfaces of the through-holes 1b ′, 2b ′, 10b ′, and 20b ′ and the rod portion of the bolt 60a need to be electrically insulated from each other. In order to improve the thermoelectric conversion efficiency of the conversion device 100 ′, it is preferable that a heat conductive medium is not interposed between the high temperature side substrate 1 ′ and the low temperature side substrate 2 ′ as much as possible. For this reason, for example, it is preferable to use a material having electrical insulation and low thermal conductivity for at least the rod portion of the bolt 60a. Examples of such bolts and nuts 60 include those made of polyimide resin. Or, for example, when the inner peripheral surface of the through holes 1b ′, 2b ′, 10b ′, 20b ′ or the rod portion of the bolt 60a is covered with an electrically insulating tube or the like, the rod portion is As long as the thermal conductivity is low, a material having high electrical conductivity may be used. In this case, for example, a metal such as SUS can be used for the bolt and nut 60, and therefore, the procurement of the member is facilitated as compared with the polyimide resin described above.

更に、本実施の形態では、ボルト６０ａは、高温側基板１’の外側（＋Ｚ側）から挿入され、ナット６０ｂは、低温側基板２’の外側（−Ｚ側）からこのボルト６０ａに対しバネ７０を介して噛合している。バネ７０は、高温劣化防止及び圧着の調整のために、低温側基板２’に設けられていることが好ましい。圧着の調整とは、ボルト６０ａに対するナット６０ｂの位置の設定を変えてバネ７０の弾性力を調整することを意味する。 Further, in the present embodiment, the bolt 60a is inserted from the outside (+ Z side) of the high temperature side substrate 1 ′, and the nut 60b is a spring against the bolt 60a from the outside (−Z side) of the low temperature side substrate 2 ′. Meshing via 70. The spring 70 is preferably provided on the low temperature side substrate 2 ′ for prevention of high temperature deterioration and adjustment of pressure bonding. The adjustment of the crimping means that the elastic force of the spring 70 is adjusted by changing the setting of the position of the nut 60b with respect to the bolt 60a.

＜＜＜第２の実施の形態＞＞＞
図２に例示されるように、本実施の形態の熱電変換装置１００”は、少なくとも一対の熱電変換用のＮ型半導体素子１０及びＰ型半導体素子２０と、電極板３０”、４０”、５０”と、貫通孔１ｂ、２ｂ、１０ｂ、２０ｂと、ボルト・ナット６０と、バネ７０と、を備えて構成される熱電発電装置である。尚、図２は、本実施の形態の熱電変換装置１００”の構成例を説明するための単位ユニットの側部断面図である。 <<< Second Embodiment >>>
As illustrated in FIG. 2, the thermoelectric conversion device 100 ″ of this embodiment includes at least a pair of N-type semiconductor element 10 and P-type semiconductor element 20 for thermoelectric conversion, and electrode plates 30 ″, 40 ″, 50. ”, A through-hole 1 b, 2 b, 10 b, 20 b, a bolt / nut 60, and a spring 70. FIG. 2 is a side sectional view of a unit unit for explaining a configuration example of the thermoelectric conversion device 100 ″ of the present embodiment.

本実施の形態の熱電変換装置１００”は、前述した第１の実施の形態の熱電変換装置１００’の構成を含んでいる。そこで、以下、前述した第１の実施の形態の構成例に対して追加又は一部変更された構成例について説明する。 The thermoelectric conversion device 100 ″ of the present embodiment includes the configuration of the thermoelectric conversion device 100 ′ of the first embodiment described above. Therefore, hereinafter, the configuration example of the first embodiment described above will be described. An example of a configuration that has been added or partially changed will be described.

本実施の形態のＮ型半導体素子１０及びＰ型半導体素子２０は、上面（＋Ｚ側）及び下面（−Ｚ側）のそれぞれに例えば球面状をなす凸面１０ａ、２０ａを有している。 The N-type semiconductor element 10 and the P-type semiconductor element 20 of the present embodiment have, for example, spherical convex surfaces 10a and 20a on the upper surface (+ Z side) and the lower surface (−Z side), respectively.

本実施の形態の電極板３０”、４０”、５０”は、前述したＮ型半導体素子１０及びＰ型半導体素子２０がその上下各面に有する凸面１０ａ、２０ａと対応する凹面３０ａ”、４０ａ”、５０ａ”を有する。本実施の形態では、これらの凸面１０ａ、２０ａと凹面３０ａ”、４０ａ”、５０ａ”との間には半田や銀ろう等は介在せず、バネ７０の付勢により機械的に圧着されているものとする。 The electrode plates 30 ″, 40 ″, 50 ″ of the present embodiment have concave surfaces 30a ″, 40a ″ corresponding to the convex surfaces 10a, 20a on the upper and lower surfaces of the N-type semiconductor element 10 and the P-type semiconductor element 20 described above. , 50a ″. In the present embodiment, solder, silver solder or the like is not interposed between the convex surfaces 10a, 20a and the concave surfaces 30a ″, 40a ″, 50a ″, and is mechanically pressure-bonded by the bias of the spring 70. Shall.

本実施の形態のボルト６０ａの頭部は、高温側基板１に対してその貫通孔１ｂの開口部に係止されている。一方、バネ７０は、低温側基板２における拡径された貫通孔２ｂに収納されている。このバネ７０が介在するボルト・ナット６０により、Ｎ型半導体素子１０と、電極板３０”及び電極板５０”とは、その凹凸面（凹面及び凸面）１０ａ、３０ａ”、５０ａ”において圧着されるとともに、ＸＹ面に沿った相互の摺動が可能となる。同様に、Ｐ型半導体素子２０と、電極板４０”及び電極板５０”とは、その凹凸面２０ａ、４０ａ”、５０ａ”において圧着されるとともに、ＸＹ面に沿った相互の摺動が可能となる。 The head of the bolt 60 a of the present embodiment is locked to the opening of the through hole 1 b with respect to the high temperature side substrate 1. On the other hand, the spring 70 is accommodated in the through-hole 2 b whose diameter is increased in the low temperature side substrate 2. The N-type semiconductor element 10 and the electrode plate 30 ″ and the electrode plate 50 ″ are pressure-bonded at the concave and convex surfaces (concave and convex surfaces) 10a, 30a ″, and 50a ″ by the bolts and nuts 60 with the springs 70 interposed therebetween. At the same time, mutual sliding along the XY plane becomes possible. Similarly, the P-type semiconductor element 20 and the electrode plate 40 ″ and the electrode plate 50 ″ are pressure-bonded at the concavo-convex surfaces 20a, 40a ″, 50a ″, and can slide relative to each other along the XY plane. Become.

尚、本実施の形態では、熱交換器における高温側基板１の外側（＋Ｚ側）の面及び低温側基板２の外側（−Ｚ側）の面には、ボルト６０ａの頭部及びナット６０ｂをこれらの面から退避した状態にするための座ぐり（凹部）１ａ、２ａがそれぞれ形成されている。これにより、熱交換器が嵩高くなることが防止される。 In the present embodiment, the head of the bolt 60a and the nut 60b are provided on the outer side (+ Z side) of the high temperature side substrate 1 and the outer side (−Z side) of the low temperature side substrate 2 in the heat exchanger. Counterbore (recessed parts) 1a and 2a for retreating from these surfaces are formed, respectively. This prevents the heat exchanger from becoming bulky.

＜＜＜第３の実施の形態＞＞＞
図３に例示されるように、本実施の形態の熱電変換装置１００は、少なくとも一対の熱電変換用のＮ型半導体素子１０及びＰ型半導体素子２０と、電極板３０、４０、５０と、貫通孔１ｂ、２ｂ、１０ｂ、２０ｂと、ボルト・ナット６０と、バネ７０と、を備えて構成される熱電発電装置である。尚、図３は、本実施の形態の熱電変換装置１００の構成例を説明するための単位ユニットの側部断面図である。 <<< Third Embodiment >>>
As illustrated in FIG. 3, the thermoelectric conversion device 100 according to the present embodiment includes at least a pair of N-type semiconductor elements 10 and P-type semiconductor elements 20 for thermoelectric conversion, electrode plates 30, 40, and 50, and through-holes. It is a thermoelectric power generator configured to include holes 1b, 2b, 10b, and 20b, a bolt / nut 60, and a spring 70. FIG. 3 is a side sectional view of a unit unit for explaining a configuration example of the thermoelectric conversion apparatus 100 of the present embodiment.

本実施の形態の熱電変換装置１００は、前述した第２の実施の形態の熱電変換装置１００”の構成を含んでおり、この第２の実施の形態の構成例に対して相違する構成例として、以下の撓み部３０ｂ、４０ｂ、５０ｂを更に備えている。 The thermoelectric conversion device 100 of the present embodiment includes the configuration of the thermoelectric conversion device 100 ″ of the second embodiment described above. As a configuration example that is different from the configuration example of the second embodiment, The following bending portions 30b, 40b, and 50b are further provided.

本実施の形態の電極板３０、４０、５０は、前述したＮ・Ｐ・Ｎ・Ｐ・・・におけるＮ型半導体素子１０及びＰ型半導体素子２０の間に撓み部３０ｂ、４０ｂ、５０ｂを有する。この撓み部３０ｂ、４０ｂ、５０ｂは、基板１、２と電極板３０、４０、５０との熱膨張差を吸収するために、高温側基板１の外側（＋Ｚ側）から内側（−Ｚ側）又は低温側基板２の外側（−Ｚ側）から内側（＋Ｚ側）に向かって湾曲した形状をなすものである。 The electrode plates 30, 40, and 50 of the present embodiment have the bent portions 30 b, 40 b, and 50 b between the N-type semiconductor element 10 and the P-type semiconductor element 20 in N, P, N, P. . The bent portions 30b, 40b, and 50b are arranged to absorb the difference in thermal expansion between the substrates 1 and 2 and the electrode plates 30, 40, and 50 from the outside (+ Z side) to the inside (−Z side) of the high-temperature side substrate 1. Or, it forms a curved shape from the outside (−Z side) to the inside (+ Z side) of the low temperature side substrate 2.

図４に例示されるように、本実施の形態の熱電変換装置１００は、前述した単位ユニット１００ａ（図４（ｃ））が複数個（例えば１６個）組み合わせられて構成されたものである。尚、図４（ａ）は、第３の実施の形態の熱交換器の高温側基板１から見た電極板３０、４０の配置例を示す平面図であり、図４（ｂ）は、この熱交換器の高温側基板１から見た電極板５０の配置例を示す平面図であり、図４（ｃ）は、この熱電変換装置１００のＡ−Ａ’及びＢ−Ｂ’に沿った断面図である。 As illustrated in FIG. 4, the thermoelectric conversion device 100 of the present embodiment is configured by combining a plurality (for example, 16) of the unit units 100 a (FIG. 4C) described above. FIG. 4A is a plan view showing an arrangement example of the electrode plates 30 and 40 viewed from the high temperature side substrate 1 of the heat exchanger according to the third embodiment, and FIG. It is a top view which shows the example of arrangement | positioning of the electrode plate 50 seen from the high temperature side board | substrate 1 of the heat exchanger, FIG.4 (c) is the cross section along AA 'and BB' of this thermoelectric conversion apparatus 100. FIG. FIG.

同図の例示によれば、１６個の単位ユニット１００ａが直列に接続されており、これにより、Ｎ型半導体素子（例えばＮ型半導体素子１０）及びＰ型半導体素子（例えばＰ型半導体素子２０）がＮ・Ｐ・Ｎ・Ｐ・・・Ｎ・Ｐ（以上Ｎ・Ｐが１６組）のように交互に直列に接続されることになる。これにより、単位ユニット１００ａの起電力の合計が、発電装置としての熱電変換装置１００の起電力となる。 According to the illustration of the figure, 16 unit units 100a are connected in series, whereby an N-type semiconductor element (for example, N-type semiconductor element 10) and a P-type semiconductor element (for example, P-type semiconductor element 20). Are connected in series alternately as N · P · N · P... N · P (N · P is 16 sets). Thereby, the sum total of the electromotive force of the unit unit 100a turns into the electromotive force of the thermoelectric conversion apparatus 100 as a power generator.

尚、本実施の形態の熱電変換装置１００は、１枚の高温側基板１と、１枚の低温側基板２との間に設けられているが、これに限定されるものではなく、これらの基板１、２は、単位ユニット１００ａ毎に分離されていてもよい。この分離された基板及び単位ユニット１００ａを新たな単位とすれば、本実施の形態の熱交換器の部分的な修理や変更等に柔軟に対応できるものとなる。また、以上の拡張は、前述した第１の実施の形態の熱電変換装置１００’及び第２の実施の形態の熱電変換装置１００”のそれぞれについても同様に実施できる。 In addition, although the thermoelectric conversion apparatus 100 of this Embodiment is provided between the one high temperature side board | substrate 1 and the one low temperature side board | substrate 2, it is not limited to this, These The substrates 1 and 2 may be separated for each unit 100a. If the separated substrate and unit unit 100a are used as a new unit, it is possible to flexibly cope with partial repair or change of the heat exchanger of the present embodiment. Further, the above expansion can be similarly performed for each of the thermoelectric conversion device 100 ′ of the first embodiment and the thermoelectric conversion device 100 ″ of the second embodiment.

＝＝＝熱電変換効率及び熱応力＝＝＝
前述した構成を備えた熱電変換装置１００’、１００”、１００によれば、貫通孔１ｂ’、１ｂ、２ｂ’、２ｂ、１０ｂ’、１０ｂ、２０ｂ’、２０ｂ及びボルト６０ａの棒部により対向して保持される電極板３０’、３０”、３０、４０’、４０”、４０、５０’、５０”、５０とＮ型半導体素子１０’、１０及びＰ型半導体素子２０’、２０とは、ボルト６０ａの頭部、ナット６０ｂ、及びバネ７０により、図１のＺ軸方向に圧着される。また、この熱電変換装置１００’、１００”、１００によれば、電極板３０’、３０”、３０、４０’、４０”、４０、５０’、５０”、５０とＮ型半導体素子１０’、１０及びＰ型半導体素子２０’、２０とは、バネ７０により、図１のＸＹ面に沿って摺動可能となる。 === Thermoelectric conversion efficiency and thermal stress ===
According to the thermoelectric conversion devices 100 ′, 100 ″, 100 having the above-described configuration, the through holes 1b ′, 1b, 2b ′, 2b, 10b ′, 10b, 20b ′, 20b and the rod portions of the bolts 60a are opposed to each other. The electrode plates 30 ′, 30 ″, 30, 40 ′, 40 ″, 40, 50 ′, 50 ″, 50 and the N-type semiconductor elements 10 ′, 10 and the P-type semiconductor elements 20 ′, 20 held by The head of the bolt 60a, the nut 60b, and the spring 70 are crimped in the Z-axis direction of FIG. Further, according to the thermoelectric conversion devices 100 ′, 100 ″, 100, the electrode plates 30 ′, 30 ″, 30, 40 ′, 40 ″, 40, 50 ′, 50 ″, 50 and the N-type semiconductor element 10 ′, 10 and the P-type semiconductor elements 20 ′ and 20 can be slid along the XY plane of FIG.

もしナット６０ｂがボルト６０ａに対してより締め込まれれば、バネ７０の弾性力がより大きくなって前述した圧着がより強くなることにより、接触抵抗がより小さくなり、電極板３０’、３０”、３０から、Ｎ型半導体素子１０’、１０、電極板５０’、５０”、５０、Ｐ型半導体素子２０’、２０、電極板４０’、４０”、４０へと流れる電流はより大きくなる。これにより、高温側基板１’、１及び低温側基板２’、２の間の温度差に応じて生じる起電力（熱電変換効率）もより大きくなる。 If the nut 60b is tightened with respect to the bolt 60a, the elastic force of the spring 70 becomes larger and the above-described pressure bonding becomes stronger, so that the contact resistance becomes smaller, and the electrode plates 30 ′, 30 ″, The current flowing from 30 to the N-type semiconductor elements 10 ′, 10, electrode plates 50 ′, 50 ″, 50, P-type semiconductor elements 20 ′, 20, electrode plates 40 ′, 40 ″, 40 becomes larger. Thus, the electromotive force (thermoelectric conversion efficiency) generated according to the temperature difference between the high temperature side substrates 1 ′, 1 and the low temperature side substrates 2 ′, 2 becomes larger.

一方、もしナット６０ｂがボルト６０ａからより緩められれば、バネ７０の弾性がより小さくなって前述した圧着がより弱くなることにより、電極板３０’、３０”、３０、４０’、４０”、４０、５０’、５０”、５０と、Ｎ型半導体素子１０’、１０及びＰ型半導体素子２０’、２０との熱膨張差によるＸＹ面に沿った熱応力が、上記電極板と上記半導体素子とのＸＹ面に沿った相互の摺動に吸収されてより小さくなる。 On the other hand, if the nut 60b is loosened further from the bolt 60a, the elasticity of the spring 70 becomes smaller and the above-described crimping becomes weaker, so that the electrode plates 30 ′, 30 ″, 30, 40 ′, 40 ″, 40 , 50 ′, 50 ″, 50 and the N-type semiconductor elements 10 ′, 10 and P-type semiconductor elements 20 ′, 20 cause thermal stress along the XY plane due to the difference in thermal expansion between the electrode plate and the semiconductor element. It becomes smaller by being absorbed by mutual sliding along the XY plane.

以上を踏まえて、バネ７０を介したボルト・ナット６０の締め込みの度合いを所定のレベルに設定することにより、前述した圧着及び摺動のバランスをとることができる。つまり、バネ７０の弾性力を、熱電変換装置１００’、１００”、１００の熱電変換効率を維持しつつ熱応力を抑制するように設定することができる。 Based on the above, by setting the degree of tightening of the bolt / nut 60 via the spring 70 to a predetermined level, it is possible to balance the above-described crimping and sliding. That is, the elastic force of the spring 70 can be set so as to suppress the thermal stress while maintaining the thermoelectric conversion efficiency of the thermoelectric conversion devices 100 ′, 100 ″, 100.

前述した第２、３の実施の形態では、電極板３０”、３０、４０”、４０、５０”、５０と、Ｎ型半導体素子１０及びＰ型半導体２０とは、その凹凸面１０ａ、２０ａ、３０ａ”、３０ａ、４０ａ”、４０ａ、５０ａ”、５０ａにおいて圧着されているため、例えば平坦な面どうしに比べて接触面積が大きい。これにより、上記電極板と上記半導体素子との接触抵抗がより小さくなって、熱電変換効率がより大きくなる。 In the second and third embodiments described above, the electrode plates 30 ″, 30, 40 ″, 40, 50 ″, 50, the N-type semiconductor element 10 and the P-type semiconductor 20 are provided with the uneven surfaces 10a, 20a, Since contact bonding is performed at 30a ″, 30a, 40a ″, 40a, 50a ″, 50a, the contact area is larger than, for example, flat surfaces. Thereby, the contact resistance between the electrode plate and the semiconductor element is further reduced, and the thermoelectric conversion efficiency is further increased.

尚、例えば第３の実施の形態の凹凸面１０ａ、２０ａ、３０ａ、４０ａ、５０ａでは、Ｎ型半導体素子１０に凸面１０ａが形成され、電極板３０、４０に凹面３０ａ、４０ａが形成されているが、これに限定されるものではなく、例えば、Ｎ型半導体素子１０に凹面が形成され、電極板３０、４０には凸面が形成されてもよい。また、例えば第３の実施の形態の凹凸面１０ａ、２０ａ、３０ａ、４０ａ、５０ａは球面状をなすものであったが（図５（ａ）参照）、これに限定されるものではない。ここで、図５は、本実施の形態の電極板３０、５０とＮ型半導体素子１０との圧着面の構成例を示す断面図である。図５（ｂ）に例示されるように、凹凸面１０ｃ、３０ｃ、５０ｃは円柱状又は多角柱状をなすものであってもよい。或いは、図５（ｃ）に例示されるように、凹凸面１０ｄ、３０ｄ、５０ｄは円錐状又は多角錐状をなすものであってもよい。要するに、電極板３０、４０、５０と半導体素子１０、２０との接触抵抗を小さくしつつ、相互に摺動可能な形状をなすものであれば、如何なるものでもよい。 For example, in the uneven surfaces 10 a, 20 a, 30 a, 40 a, and 50 a of the third embodiment, the convex surface 10 a is formed on the N-type semiconductor element 10, and the concave surfaces 30 a and 40 a are formed on the electrode plates 30 and 40. However, the present invention is not limited to this. For example, a concave surface may be formed on the N-type semiconductor element 10, and a convex surface may be formed on the electrode plates 30 and 40. Further, for example, the concave and convex surfaces 10a, 20a, 30a, 40a, and 50a of the third embodiment have a spherical shape (see FIG. 5A), but are not limited thereto. Here, FIG. 5 is a cross-sectional view showing a configuration example of a crimping surface between the electrode plates 30 and 50 and the N-type semiconductor element 10 of the present embodiment. As illustrated in FIG. 5B, the uneven surfaces 10c, 30c, and 50c may be columnar or polygonal columnar. Alternatively, as illustrated in FIG. 5C, the uneven surfaces 10d, 30d, and 50d may have a conical shape or a polygonal pyramid shape. In short, any material may be used as long as the contact resistance between the electrode plates 30, 40, 50 and the semiconductor elements 10, 20 can be reduced while reducing the contact resistance.

また、前述した第１〜３の実施の形態では、貫通孔１ｂ’、１ｂ、２ｂ’、２ｂ、１０ｂ’、１０ｂ、２０ｂ’、２０ｂの径と、ボルト６０ａの棒部の径とは、当該貫通孔及び棒部の間に隙間が形成されるように設定されているため、電極板３０’、３０”、３０、４０’、４０”、４０、５０’、５０”、５０と半導体素子１０’、１０、２０’、２０とは、この隙間の分だけ相互に摺動可能である（図１〜３参照）。よって、上記電極板と上記半導体素子との熱膨張差によるＸＹ面に沿った熱応力が、上記電極板と上記半導体素子とのＸＹ面に沿った相互の摺動に吸収されてより小さくなる。 In the first to third embodiments described above, the diameters of the through holes 1b ′, 1b, 2b ′, 2b, 10b ′, 10b, 20b ′, and 20b and the diameter of the rod portion of the bolt 60a are Since the gap is formed between the through hole and the rod portion, the electrode plates 30 ′, 30 ″, 30, 40 ′, 40 ″, 40, 50 ′, 50 ″, 50 and the semiconductor element 10 '10, 20 'and 20 can slide relative to each other by this gap (see FIGS. 1 to 3), and therefore, along the XY plane due to the difference in thermal expansion between the electrode plate and the semiconductor element. The thermal stress is absorbed and absorbed by the mutual sliding along the XY plane of the electrode plate and the semiconductor element.

更に、前述した第３の実施の形態では、電極板３０、４０、５０は、前述したＮ・Ｐ・Ｎ・Ｐ・・・におけるＮ型半導体素子１０及びＰ型半導体素子２０の間に撓み部３０ｂ、４０ｂ、５０ｂを有するため、例えば基板１、２が電極板３０、４０、５０よりも熱膨張した場合、この撓み部３０ｂ、４０ｂ、５０ｂがＺ軸方向に沿って縮むことにより、この熱膨張が電極板３０、４０、５０と半導体素子１０、２０との圧着面に影響を及ぼすことを防止できる（図３参照）。或いは、例えば基板１、２が電極板３０、４０、５０よりも熱収縮した場合、この撓み部３０ｂ、４０ｂ、５０ｂがＺ軸方向に沿って伸びることにより、この熱収縮が電極板３０、４０、５０と半導体素子１０、２０との圧着面に影響を及ぼすことを防止できる（図３参照）。尚、撓み部３０ｂ、４０ｂ、５０ｂの形状は、図３の例示に限定されるものではなく、要するに、基板１、２と電極板３０、４０、５０との熱膨張差を吸収するのに好適なものであれば、如何なる形状であってもよい。 Further, in the above-described third embodiment, the electrode plates 30, 40, 50 are bent portions between the N-type semiconductor element 10 and the P-type semiconductor element 20 in the above-described N · P · N · P. 30b, 40b, and 50b, for example, when the substrates 1 and 2 are more thermally expanded than the electrode plates 30, 40, and 50, the bent portions 30b, 40b, and 50b are contracted along the Z-axis direction, thereby It is possible to prevent the expansion from affecting the crimping surfaces of the electrode plates 30, 40, 50 and the semiconductor elements 10, 20 (see FIG. 3). Alternatively, for example, when the substrates 1 and 2 are more thermally contracted than the electrode plates 30, 40, and 50, the flexures 30 b, 40 b, and 50 b are extended along the Z-axis direction. , 50 and the semiconductor elements 10 and 20 can be prevented from being affected (see FIG. 3). Note that the shapes of the flexures 30b, 40b, and 50b are not limited to those illustrated in FIG. 3, and in short, are suitable for absorbing the difference in thermal expansion between the substrates 1 and 2 and the electrode plates 30, 40, and 50. Any shape may be used as long as it is not particularly limited.

また更に、前述した第１〜３の実施の形態では、電極板３０’、３０”、３０、４０’、４０”、４０、５０’、５０”、５０と、基板１’、１、２’、２の面とは、窒化ホウ素（ＢＮ）粒子等の固体潤滑性物質８０’、８０が塗布されている。これにより、上記電極板と上記基板の面との間のＸＹ面に沿った相互の変位がより円滑になるため、上記基板の熱膨張又は熱収縮が、上記電極板と半導体素子１０’、１０、２０’、２０との圧着面に影響を及ぼすことが防止される（図１〜３参照）。 Furthermore, in the first to third embodiments described above, the electrode plates 30 ′, 30 ″, 30, 40 ′, 40 ″, 40, 50 ′, 50 ″, 50 and the substrates 1 ′, 1, 2 ′. 2 are coated with solid lubricating substances 80 ', 80 such as boron nitride (BN) particles, etc. Thereby, mutual contact along the XY plane between the electrode plate and the surface of the substrate is performed. Therefore, the thermal expansion or contraction of the substrate is prevented from affecting the pressure-bonding surface between the electrode plate and the semiconductor elements 10 ′, 10, 20 ′, and 20 (FIG. 1). To 3).

以上から、本実施の形態の熱電変換装置１００’、１００”、１００は、熱電変換効率を維持しつつ熱応力を抑制可能なものである。 From the above, the thermoelectric conversion devices 100 ′, 100 ″, 100 according to the present embodiment can suppress thermal stress while maintaining the thermoelectric conversion efficiency.

図６に例示されるように、例えば第３の実施の形態のＮ型半導体素子１０及びＰ型半導体素子２０は、例えば電極板１０ｍ、２０ｍを介して高温域仕様のＮｈ型半導体素子（第１のＮ型半導体素子）１０ｈｏｔ及びＰｈ型半導体素子（第１のＰ型半導体素子）２０ｈｏｔと、低温域仕様のＮｃ型半導体素子（第２のＮ型半導体素子）１０ｃｏｌｄ及びＰｃ型半導体素子（第２のＰ型半導体素子）２０ｃｏｌｄとがそれぞれ接合されたいわゆるカスケード型半導体素子１０ｃａｓ、２０ｃａｓであってもよい。Ｎｈ型半導体素子及びＰｈ型半導体素子とは、高温域において熱電変換効率が相対的に高いＮ型及びＰ型半導体素子をそれぞれ意味し、Ｎｃ型半導体素子及びＰｃ型半導体素子とは、低温域において熱電変換効率が相対的に高いＮ型及びＰ型半導体素子をそれぞれ意味するものとする。これにより、熱電変換効率がより向上する。尚、図６は、本実施の形態の電極１０ｍ、２０ｍ、３０、４０、５０及び半導体素子１０ｃａｓ、２０ｃａｓの構成例を示す断面図である。この場合も、例えばＮｈ型半導体素子１０ｈｏｔ、電極１０ｍ、及びＮｃ型半導体素子１０ｃｏｌｄは、ボルト・ナット６０及びバネ７０により摺動可能に圧着されているため、相互の熱膨張差による熱応力が抑制される。 As illustrated in FIG. 6, for example, the N-type semiconductor element 10 and the P-type semiconductor element 20 according to the third embodiment are, for example, Nh-type semiconductor elements having a high temperature range specification (first first electrode) via electrode plates 10 m and 20 m. N-type semiconductor element) 10hot and Ph-type semiconductor element (first P-type semiconductor element) 20hot, low-temperature range Nc-type semiconductor element (second N-type semiconductor element) 10cold, and Pc-type semiconductor element (second The so-called cascade type semiconductor elements 10cas and 20cas, which are joined to each other, may be used. The Nh-type semiconductor element and the Ph-type semiconductor element mean N-type and P-type semiconductor elements having relatively high thermoelectric conversion efficiency in a high temperature range, respectively. The Nc-type semiconductor element and the Pc-type semiconductor element are in a low temperature range. N-type and P-type semiconductor elements each having a relatively high thermoelectric conversion efficiency are meant. Thereby, thermoelectric conversion efficiency improves more. FIG. 6 is a cross-sectional view illustrating a configuration example of the electrodes 10m, 20m, 30, 40, and 50 and the semiconductor elements 10cas and 20cas according to the present embodiment. Also in this case, for example, the Nh-type semiconductor element 10hot, the electrode 10m, and the Nc-type semiconductor element 10cold are slidably pressure-bonded by the bolt / nut 60 and the spring 70, so that the thermal stress due to the mutual thermal expansion difference is suppressed. Is done.

＝＝＝その他の実施の形態＝＝＝
前述した実施の形態は、本発明の理解を容易にするためのものであり、本発明を限定して解釈するためのものではない。本発明は、その趣旨を逸脱することなく変更、改良されるとともに、本発明にはその等価物も含まれる。 === Other Embodiments ===
The above-described embodiment is intended to facilitate understanding of the present invention, and is not intended to limit the present invention. The present invention is changed and improved without departing from the gist thereof, and the present invention includes equivalents thereof.

例えば前述した第３の実施の形態の熱電変換装置１００は、平面形状をなし対向する基板１、２の間に設けられたものであるが、これに限定されるものではない。図７に例示されるように、熱電変換装置１１００は、例えば蒸気配管の外周面を高温側基板１００１とし、その更に外周面を低温側基板１００２とする同心円形をなすものであってもよい。図７（ａ）は、本実施の形態の蒸気配管の長手方向に沿って見た熱電変換装置１１００の部分断面図であり、図７（ｂ）は、長手方向に垂直な方向から見た熱電変換装置１１００の部分断面図であり、図７（ｃ）は、熱電変換装置１１００の部分斜視図である。 For example, the thermoelectric conversion device 100 according to the third embodiment described above is provided between the opposing substrates 1 and 2 having a planar shape, but is not limited thereto. As illustrated in FIG. 7, the thermoelectric conversion device 1100 may have a concentric shape in which, for example, the outer peripheral surface of the steam pipe is a high temperature side substrate 1001 and the outer peripheral surface is a low temperature side substrate 1002. FIG. 7A is a partial cross-sectional view of the thermoelectric conversion device 1100 viewed along the longitudinal direction of the steam pipe of the present embodiment, and FIG. 7B is a thermoelectric viewed from a direction perpendicular to the longitudinal direction. FIG. 7C is a partial cross-sectional view of the conversion device 1100, and FIG. 7C is a partial perspective view of the thermoelectric conversion device 1100.

また、前述した第１〜３の実施の形態の熱電変換装置１００’、１００”、１００は、ゼーベック効果を利用した熱電発電装置であったが、これに限定されるものではなく、ペルチェ効果を利用した熱電冷却装置であってもよい。この場合、熱電変換装置１００’、１００”、１００に電流を供給する所定の電源が別途必要となる。 In addition, the thermoelectric conversion devices 100 ′, 100 ″, 100 of the first to third embodiments described above are thermoelectric power generation devices using the Seebeck effect, but are not limited to this, and the Peltier effect is achieved. A thermoelectric cooling device may be used.In this case, a predetermined power supply for supplying current to the thermoelectric conversion devices 100 ′, 100 ″, 100 is separately required.

更に、前述した第１〜３の実施の形態の熱電変換装置１００’、１００”、１００は、低温側基板２’、２にバネ７０を備えていたが、これに限定されるものではなく、例えば高温側基板１’、１及び低温側基板２’、２の両方に備えていてもよい。 Furthermore, the thermoelectric conversion devices 100 ′, 100 ″, 100 according to the first to third embodiments described above include the springs 70 on the low temperature side substrates 2 ′, 2, but are not limited thereto. For example, both the high temperature side substrates 1 ′ and 1 and the low temperature side substrates 2 ′ and 2 may be provided.

第１の実施の形態の熱電変換装置の構成例を説明するための単位ユニットの側部断面図である。It is side part sectional drawing of the unit unit for demonstrating the structural example of the thermoelectric conversion apparatus of 1st Embodiment. 第２の実施の形態の熱電変換装置の構成例を説明するための単位ユニットの側部断面図である。It is side part sectional drawing of the unit unit for demonstrating the structural example of the thermoelectric conversion apparatus of 2nd Embodiment. 第３の実施の形態の熱電変換装置の構成例を説明するための単位ユニットの側部断面図である。It is side part sectional drawing of the unit unit for demonstrating the structural example of the thermoelectric conversion apparatus of 3rd Embodiment. （ａ）は、第３の実施の形態の熱交換器の高温側基板から見た電極板の配置例を示す平面図であり、（ｂ）は、第３の実施の形態の熱交換器の高温側基板から見た電極板の配置例を示すもう一つの平面図であり、（ｃ）は、第３の実施の形態の熱電変換装置のＡ−Ａ’及びＢ−Ｂ’に沿った断面図である。(A) is a top view which shows the example of arrangement | positioning of the electrode plate seen from the high temperature side board | substrate of the heat exchanger of 3rd Embodiment, (b) is the heat exchanger of 3rd Embodiment. It is another top view which shows the example of arrangement | positioning of the electrode plate seen from the high temperature side board | substrate, (c) is the cross section along AA 'and BB' of the thermoelectric conversion apparatus of 3rd Embodiment. FIG. 第３の実施の形態の電極板とＮ型半導体素子との圧着面の構成例を示す断面図である。It is sectional drawing which shows the structural example of the crimping | compression-bonding surface of the electrode plate and N type semiconductor element of 3rd Embodiment. 第３の実施の形態の半導体素子の他の構成例を示す断面図である。It is sectional drawing which shows the other structural example of the semiconductor element of 3rd Embodiment. （ａ）は、本実施の形態の蒸気配管の長手方向に沿って見た熱電変換装置の部分断面図であり、（ｂ）は、長手方向に垂直な方向から見た熱電変換装置の部分断面図であり、（ｃ）は、熱電変換装置の部分斜視図である。(A) is the fragmentary sectional view of the thermoelectric conversion apparatus seen along the longitudinal direction of the steam piping of this Embodiment, (b) is the partial cross section of the thermoelectric conversion apparatus seen from the direction perpendicular | vertical to a longitudinal direction. It is a figure and (c) is a fragmentary perspective view of a thermoelectric conversion apparatus. 熱電変換装置の構成例を説明するための単位ユニットの側部断面図である。It is side part sectional drawing of the unit unit for demonstrating the structural example of a thermoelectric conversion apparatus.

符号の説明Explanation of symbols

１高温側基板、１ａ座ぐり、１ｂ貫通孔、
２低温側基板、２ａ座ぐり、２ｂ貫通孔、
１０Ｎ型半導体素子、１０ａ、１０ｃ、１０ｄ凸面、１０ｂ貫通孔
２０Ｐ型半導体素子、２０ａ凸面、２０ｂ貫通孔、
１０ｃａｓ、２０ｃａｓカスケード型半導体素子、
１０ｈｏｔＮｈ型半導体素子、１０ｃｏｌｄＮｃ型半導体素子、
２０ｈｏｔＰｈ型半導体素子、２０ｃｏｌｄＰｃ型半導体素子、
１０ｍ、２０ｍ、３０、４０、５０電極板、
３０ａ、３０ｃ、３０ｄ、４０ａ、５０ａ、５０ｃ、５０ｄ凹面、
３０ｂ、４０ｂ、５０ｂ撓み部、
６０ボルト・ナット、６０ａボルト、６０ｂナット、
７０バネ、８０固体潤滑性物質、
１００熱電変換装置、１００ａ単位ユニット、
９００熱電変換装置、９９０半田（又は銀ロウ） 1 high temperature side substrate, 1a counterbore, 1b through hole,
2 Low temperature side substrate, 2a counterbore, 2b through hole,
10 N-type semiconductor element, 10a, 10c, 10d convex surface, 10b through-hole 20 P-type semiconductor element, 20a convex surface, 20b through-hole,
10cas, 20cas cascade type semiconductor element,
10hot Nh type semiconductor element, 10cold Nc type semiconductor element,
20hot Ph type semiconductor element, 20cold Pc type semiconductor element,
10m, 20m, 30, 40, 50 electrode plate,
30a, 30c, 30d, 40a, 50a, 50c, 50d Concave surface,
30b, 40b, 50b flexure part,
60 bolts and nuts, 60a bolts, 60b nuts,
70 spring, 80 solid lubricant,
100 thermoelectric converter, 100a unit unit,
900 Thermoelectric converter, 990 Solder (or silver solder)

Claims

対向する熱交換基板の間に並設される少なくとも一対の熱電変換用のＰ型半導体素子及びＮ型半導体素子と、
一方の前記熱交換基板と前記Ｐ型半導体素子及び前記Ｎ型半導体素子との間と、他方の前記熱交換基板と前記Ｐ型半導体素子及び前記Ｎ型半導体素子との間とに介在し、前記Ｐ型半導体素子及び前記Ｎ型半導体素子を交互に直列接続する電極板と、
前記一方の熱交換基板から前記他方の熱交換基板まで前記電極板及び前記Ｐ型半導体素子を介して貫通し、前記一方の熱交換基板から前記他方の熱交換基板まで前記電極板及び前記Ｎ型半導体素子を介して貫通する貫通孔と、
前記貫通孔に挿入される棒部材と、
前記Ｐ型半導体素子及び前記Ｎ型半導体素子と、当該Ｐ型半導体素子及び当該Ｎ型半導体素子と対向する前記電極板とが圧着するように、対向する前記熱交換基板の外側で前記棒部材の両端と結合される圧着部材と、
前記Ｐ型半導体素子及び前記Ｎ型半導体素子と、当該Ｐ型半導体素子及び当該Ｎ型半導体素子と対向する前記電極板とが摺動可能に圧着するように、少なくとも一方の前記熱交換基板の外側と前記圧着部材との間に介在する弾性部材と、
を備えたことを特徴とする熱電変換装置。 At least a pair of P-type semiconductor elements and N-type semiconductor elements for thermoelectric conversion arranged in parallel between the opposing heat exchange substrates;
Interposed between the one heat exchange substrate and the P-type semiconductor element and the N-type semiconductor element, and between the other heat exchange substrate and the P-type semiconductor element and the N-type semiconductor element, An electrode plate for alternately connecting a P-type semiconductor element and the N-type semiconductor element in series;
The electrode plate and the N type are penetrated from the one heat exchange substrate to the other heat exchange substrate through the electrode plate and the P-type semiconductor element, and from the one heat exchange substrate to the other heat exchange substrate. A through-hole penetrating through the semiconductor element;
A rod member inserted into the through hole;
The P-type semiconductor element and the N-type semiconductor element and the electrode member opposite to the P-type semiconductor element and the N-type semiconductor element are pressed against each other on the outside of the opposing heat exchange substrate. A crimping member coupled to both ends;
The outside of at least one of the heat exchange substrates so that the P-type semiconductor element and the N-type semiconductor element and the electrode plate facing the P-type semiconductor element and the N-type semiconductor element are slidably pressed. And an elastic member interposed between the crimping member and
A thermoelectric conversion device comprising:

前記電極板に対する前記Ｐ型半導体素子及び前記Ｎ型半導体素子の圧着面と、前記Ｐ型半導体素子及び前記Ｎ型半導体素子に対する前記電極板の圧着面とのうち、一方の前記圧着面は凸面であり、他方の前記圧着面は凹面である、ことを特徴とする請求項１に記載の熱電変換装置。 Of the pressure bonding surfaces of the P-type semiconductor element and the N-type semiconductor element to the electrode plate and the pressure-bonding surface of the electrode plate to the P-type semiconductor element and the N-type semiconductor element, one of the pressure bonding surfaces is a convex surface. The thermoelectric conversion device according to claim 1, wherein the other crimping surface is a concave surface.

前記貫通孔は、挿入された前記棒部材との間に隙間を有することを特徴とする請求項１又は２に記載の熱電変換装置。 The thermoelectric conversion device according to claim 1 or 2, wherein the through hole has a gap between the inserted rod member.

前記電極板は、隣接する前記Ｐ型半導体素子及び前記Ｎ型半導体素子の間に、前記熱交換基板の膨張及び収縮を吸収するための撓み部を有することを特徴とする請求項１乃至３の何れかに記載の熱電変換装置。 The said electrode plate has a bending part for absorbing the expansion | swelling and shrinkage | contraction of the said heat exchange board | substrate between the said P-type semiconductor element and the said N-type semiconductor element which adjoin each other. The thermoelectric conversion apparatus in any one.

前記熱交換基板と前記電極板との間は、絶縁性潤滑材で絶縁されることを特徴とする請求項１乃至４の何れかに記載の熱電変換装置。 The thermoelectric conversion device according to any one of claims 1 to 4, wherein the heat exchange substrate and the electrode plate are insulated by an insulating lubricant.

前記Ｐ型半導体素子及び前記Ｎ型半導体素子と対向しない側の前記熱交換基板の面は、前記圧着部材が当該面から退避するための凹部を有する、ことを特徴とする請求項１乃至５の何れかに記載の熱電変換装置。 6. The surface of the heat exchange substrate on the side not facing the P-type semiconductor element and the N-type semiconductor element has a recess for the crimping member to retreat from the surface. The thermoelectric conversion apparatus in any one.

前記弾性部材は、対向する前記熱交換基板のうち、低温側となる一方の前記熱交換基板の外側と、前記圧着部材との間に介在する、ことを特徴とする請求項１乃至６の何れかに記載の熱電変換装置。 The said elastic member is interposed between the outer side of one said heat exchange board | substrate used as the low temperature side among the said heat exchange board | substrates which oppose, and the said crimping | compression-bonding member. A thermoelectric conversion device according to claim 1.

前記貫通孔の内周面は、絶縁材で被覆されることを特徴とする請求項１乃至７の何れかに記載の熱電変換装置。 The thermoelectric conversion device according to claim 1, wherein an inner peripheral surface of the through hole is covered with an insulating material.

前記棒部材は、絶縁材で被覆された部材、又は、絶縁材からなる部材の何れかであることを特徴とする請求項１乃至７の何れかに記載の熱電変換装置。 The thermoelectric conversion device according to any one of claims 1 to 7, wherein the rod member is either a member covered with an insulating material or a member made of an insulating material.

前記Ｐ型半導体素子は、
対向する前記熱交換基板のうち、高温側となる一方の前記熱交換基板の側の第１のＰ型半導体素子と、
対向する前記熱交換基板のうち、低温側となる他方の前記熱交換基板の側の第２のＰ型半導体素子と、が電極板を介して前記圧着部材により圧着されてなるカスケード型半導体素子であり、
前記Ｎ型半導体素子は、
前記高温側となる一方の熱交換基板の側の第１のＮ型半導体素子と、
前記低温側となる他方の熱交換基板の側の第２のＮ型半導体素子と、が電極板を介して前記圧着部材により圧着されてなるカスケード型半導体素子であり、
前記第１のＰ型半導体素子及び前記第１のＮ型半導体素子の熱電変換効率は、前記高温側において前記低温側よりも高く、
前記第２のＰ型半導体素子及び前記第２のＮ型半導体素子の熱電変換効率は、前記低温側において前記高温側よりも高い、
ことを特徴とする請求項１乃至９の何れかに記載の熱電変換装置。

The P-type semiconductor element is
A first P-type semiconductor element on one heat exchange substrate side that is on a high temperature side among the heat exchange substrates facing each other;
A cascade-type semiconductor element formed by pressure-bonding the second P-type semiconductor element on the side of the other heat exchange board, which is on the low temperature side, of the opposing heat exchange boards with the pressure-bonding member via an electrode plate Yes,
The N-type semiconductor element is
A first N-type semiconductor element on the side of one heat exchange substrate on the high temperature side;
The second N-type semiconductor element on the side of the other heat exchange substrate on the low-temperature side is a cascade-type semiconductor element formed by pressure bonding with the pressure-bonding member via an electrode plate,
The thermoelectric conversion efficiency of the first P-type semiconductor element and the first N-type semiconductor element is higher on the high temperature side than on the low temperature side,
The thermoelectric conversion efficiency of the second P-type semiconductor element and the second N-type semiconductor element is higher on the low temperature side than on the high temperature side,
The thermoelectric conversion device according to any one of claims 1 to 9, wherein