JP2007049122A - 変換装置、放射線検出装置、及び放射線検出システム - Google Patents
変換装置、放射線検出装置、及び放射線検出システム Download PDFInfo
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Abstract
【解決手段】 本発明の変換装置は、絶縁性の基板上に設けられたスイッチング素子と、スイッチング素子上に設けられスイッチング素子に接続された変換素子と、を含む画素と、画素に接続された配線と、を有し、端子部の表面を被覆する透明導電層と、端子部の端部を被覆し、開口を有する保護層と、を含み、端子部が、変換装置の最も上層の金属層によってのみ構成されている。
【選択図】 図2
Description
図1〜3を用いて、本発明の第1の実施形態を詳細に説明する。図1は、本発明の第1の実施形態における光電変換装置及び放射線検出装置を説明する概念的平面図である。図2は、本発明の第1の実施形態における光電変換装置及び放射線検出装置の周辺領域を拡大した概念的平面図である。図3は、図2のA−A’における模式的断面図である。また、図1〜3において、図6〜8で示した従来のFPDと同様の構成要素は同一の番号で示し、その詳細な説明は割愛する。
図5は、本発明によるFPD型の放射線検出装置を用いたX線診断システムへの応用例を示したものである。
101 光電変換素子(MIS型フォトセンサ)
102 スイッチング素子
103 駆動配線
103a 駆動配線引き出し部
104 信号配線
104a 信号配線引き出し部
105 バイアス配線
105a 第1のバイアス配線引き出し部
105b 第2のバイアス配線引き出し部
106 信号処理回路
107 駆動回路
108 A/D変換部
109 バイアス電源部
110 第1の金属層M1(スイッチング素子102のゲート電極)
111 第1の絶縁層
112 第1の半導体層
113 第1の不純物半導体層
114 第2の金属層M2(スイッチング素子102のソース又はドレイン電極)
115 層間絶縁層
116 第3の金属層M3(センサ下部電極)
117 第2の絶縁層
118 第2の半導体層
119 第2の不純物半導体層
120 上部電極層(透明電極層)
121 保護層
122 波長変換体
123 駆動配線端子部
124 信号配線端子部
125 バイアス配線端子部
126〜129 コンタクト
131 信号配線用端子
132 バイアス配線用端子
133 第3の不純物半導体層
134 光電変換素子(PIN型フォトダイオード)
Claims (9)
- 絶縁性の基板上に設けられたスイッチング素子と、前記スイッチング素子上に設けられ前記スイッチング素子に接続された変換素子と、を含む画素と、
前記画素に接続された配線と、を有し、
前記配線は外部回路に接続するための端子部を有し、
前記端子部の表面を被覆する透明導電層と、
前記端子部の端部を被覆し、開口を有する保護層と、を含む変換装置において、
前記配線は、外部駆動回路からの前記スイッチング素子を動作させる信号を印加するために前記スイッチング素子に接続される駆動配線、前記変換素子によって発生した電荷を前記スイッチング素子から外部信号処理回路に転送するために前記スイッチング素子に接続される信号配線、前記変換素子にバイアスを印加するために外部電源回路に接続されたバイアス配線、のうちのいずれか1つであり、
前記端子部は、前記変換装置の最も上層の金属層によってのみ構成されていることを特徴とする変換装置。 - 前記端子は、前記バイアス配線と同一の金属層であることを特徴とする請求項1に記載の変換装置。
- 前記保護層は、前記透明導電層上に配置され、前記透明導電層の端部を被覆することを特徴とする請求項1または請求項2に記載の変換装置。
- 前記保護層は、前記画素を被覆することを特徴とする請求項1ないし請求項3に記載の変換装置。
- 前記端子部は前記基板上に設けられており、前記保護層は前記端子部の側面を被覆することを特徴とする請求項1ないし請求項4に記載の変換装置。
- 前記端子部は前記基板上に設けられており、前記透明導電層は前記端子部の側面を被覆することを特徴とする請求項1ないし請求項5に記載の変換装置。
- 前記端子部は前記端子部と隣接する他の端子部との間に、前記端子部の端部と対向する前記他の端子部の端部を少なくとも被覆して前記保護層が配されていることを特徴とする請求項1ないし請求項6に記載の変換装置。
- 前記変換素子上に配され、入射した放射線を可視光に変換するための波長変換体を更に有することを特徴とする請求項1ないし請求項7のいずれか1項に記載の放射線検出装置。
- 請求項8に記載の放射線検出装置と、
前記放射線検出装置からの信号を処理する信号処理手段と、
前記信号処理手段からの信号を記録するための記録手段と、
前記信号処理手段からの信号を表示するための表示手段と、
前記信号処理手段からの信号を伝送するための伝送処理手段と、
前記放射線を発生させるための放射線源と、
を具備することを特徴とする放射線検出システム。
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JP2006181890A JP4908947B2 (ja) | 2005-07-11 | 2006-06-30 | 変換装置、放射線検出装置、及び放射線検出システム |
US11/456,155 US7429723B2 (en) | 2005-07-11 | 2006-07-07 | Conversion apparatus, radiation detection apparatus, and radiation detection system |
US12/184,522 US7655920B2 (en) | 2005-07-11 | 2008-08-01 | Conversion apparatus, radiation detection apparatus, and radiation detection system |
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JP2006181890A JP4908947B2 (ja) | 2005-07-11 | 2006-06-30 | 変換装置、放射線検出装置、及び放射線検出システム |
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JP2007049122A true JP2007049122A (ja) | 2007-02-22 |
JP2007049122A5 JP2007049122A5 (ja) | 2011-10-20 |
JP4908947B2 JP4908947B2 (ja) | 2012-04-04 |
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Cited By (4)
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JP2009252835A (ja) * | 2008-04-02 | 2009-10-29 | Fujifilm Corp | 電磁波検出素子 |
JP2011159781A (ja) * | 2010-02-01 | 2011-08-18 | Epson Imaging Devices Corp | 光電変換装置、エックス線撮像装置及び光電変換装置の製造方法 |
JP2011159782A (ja) * | 2010-02-01 | 2011-08-18 | Epson Imaging Devices Corp | 光電変換装置、エックス線撮像装置及び光電変換装置の製造方法 |
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US20080290284A1 (en) | 2008-11-27 |
US20070007458A1 (en) | 2007-01-11 |
JP4908947B2 (ja) | 2012-04-04 |
US7429723B2 (en) | 2008-09-30 |
US7655920B2 (en) | 2010-02-02 |
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