JP2007027663A - Polishing composition - Google Patents

Polishing composition Download PDF

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JP2007027663A
JP2007027663A JP2005211816A JP2005211816A JP2007027663A JP 2007027663 A JP2007027663 A JP 2007027663A JP 2005211816 A JP2005211816 A JP 2005211816A JP 2005211816 A JP2005211816 A JP 2005211816A JP 2007027663 A JP2007027663 A JP 2007027663A
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polishing
polishing composition
single crystal
composition
colloidal silica
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Kenji Kawada
研治 河田
Kazutoshi Hotta
和利 堀田
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Fujimi Inc
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Fujimi Inc
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Priority to JP2005211816A priority Critical patent/JP2007027663A/en
Priority to KR1020060066901A priority patent/KR20070012209A/en
Priority to DE102006033919A priority patent/DE102006033919A1/en
Priority to US11/490,900 priority patent/US20070021040A1/en
Publication of JP2007027663A publication Critical patent/JP2007027663A/en
Priority to US12/188,660 priority patent/US20080305718A1/en
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a polishing composition capable of suitably polishing a (000-1)C surface, taking into consideration the problem wherein although a polishing composition, containing colloidal silica and having pH 7 to 10, is known in a polishing process for polishing a 4H-SiC monocrystal substrate or a 6H-SiC monocrystal substrate, the capacity for polishing a crystal face is low in this polishing composition and the time required for polishing is extremely long, and the problem wherein surface defects, such as pits, tend to be generated. <P>SOLUTION: The invented polishing composition is mainly used for polishing a polishing target comprising silicon carbide monocrystal, contains iodine compounds, such as ortho periodic acid and sodium meta-periodate, and further contains abrasive grains, such as colloidal silica, as necessary. The pH of the polishing composition is ≤8. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は、半導体単結晶からなる研磨対象物を研磨する用途、特に六方晶炭化ケイ素単結晶基板のような炭化ケイ素単結晶からなる研磨対象物を研磨する用途で使用される研磨用組成物に関する。   TECHNICAL FIELD The present invention relates to a polishing composition used for polishing a polishing object composed of a semiconductor single crystal, particularly for polishing a polishing object composed of a silicon carbide single crystal such as a hexagonal silicon carbide single crystal substrate. .

４Ｈ−ＳｉＣ単結晶基板や６Ｈ−ＳｉＣ単結晶基板などの炭化ケイ素単結晶基板は通常、ダイヤモンド砥粒を含むスラリーを用いて基板の表面を予備研磨する工程と、予備研磨した基板の表面を仕上げ研磨する工程とを経て製造される。仕上げ研磨においては、予備研磨により基板の表面に生じる非晶質の加工変質層が除去されるとともに、加工変質層の除去の後に露出する基板の結晶面が平坦化される。この仕上げ研磨の際に使用される研磨用組成物としては、特許文献１に開示されているように、コロイダルシリカを含有したｐＨ７〜１０の研磨用組成物が知られている。しかしながら、特許文献１の研磨用組成物は結晶面を研磨する能力が低いため、特許文献１の研磨用組成物を用いた場合には仕上げ研磨に要する時間が極めて長くなるという問題があった。また、特許文献１の研磨用組成物を用いて六方晶炭化ケイ素単結晶基板である４Ｈ−ＳｉＣ単結晶基板又は６Ｈ−ＳｉＣ単結晶基板の（０００−１）Ｃ面を研磨すると、ピットなどの表面欠陥が発生しやすいという問題もあった。
特開２００４−２９９０１８号公報 Silicon carbide single crystal substrates such as 4H-SiC single crystal substrates and 6H-SiC single crystal substrates are usually prepared by pre-polishing the surface of the substrate using a slurry containing diamond abrasive grains, and finishing the surface of the pre-polished substrate. It is manufactured through a polishing process. In the finish polishing, the amorphous work-affected layer generated on the surface of the substrate by preliminary polishing is removed, and the crystal plane of the substrate exposed after the removal of the work-affected layer is flattened. As a polishing composition used in this final polishing, as disclosed in Patent Document 1, a polishing composition having a pH of 7 to 10 containing colloidal silica is known. However, since the polishing composition of Patent Document 1 has a low ability to polish a crystal plane, when the polishing composition of Patent Document 1 is used, there is a problem that the time required for final polishing becomes extremely long. Further, when the polishing composition of Patent Document 1 is used to polish a (000-1) C surface of a 4H—SiC single crystal substrate or a 6H—SiC single crystal substrate which is a hexagonal silicon carbide single crystal substrate, There was also a problem that surface defects were likely to occur.
JP 2004-299018 A

そこで本発明の目的は、（０００−１）Ｃ面を好適に研磨することができる研磨用組成物を提供することにある。   Accordingly, an object of the present invention is to provide a polishing composition capable of suitably polishing the (000-1) C plane.

上記の目的を達成するために、請求項１に記載の発明は、半導体単結晶からなる研磨対象物を研磨する用途で使用される研磨用組成物であって、ヨウ素化合物を含有してｐＨが８以下である研磨用組成物を提供する。   In order to achieve the above object, the invention described in claim 1 is a polishing composition used for polishing a polishing object made of a semiconductor single crystal, which contains an iodine compound and has a pH of A polishing composition that is 8 or less is provided.

請求項２に記載の発明は、砥粒をさらに含有する請求項１に記載の研磨用組成物を提供する。
請求項３に記載の発明は、前記ヨウ素化合物がヨウ素酸、過ヨウ素酸又はそれらの塩からなる請求項１又は２に記載の研磨用組成物を提供する。 The invention according to claim 2 provides the polishing composition according to claim 1, further comprising abrasive grains.
The invention according to claim 3 provides the polishing composition according to claim 1 or 2, wherein the iodine compound comprises iodic acid, periodic acid or a salt thereof.

請求項４に記載の発明は、前記研磨対象物が炭化ケイ素単結晶からなる請求項１〜３のいずれか一項に記載の研磨用組成物を提供する。   Invention of Claim 4 provides the polishing composition as described in any one of Claims 1-3 in which the said grinding | polishing target object consists of a silicon carbide single crystal.

本発明によれば、（０００−１）Ｃ面を好適に研磨することができる研磨用組成物が提供される。   ADVANTAGE OF THE INVENTION According to this invention, the polishing composition which can grind | polish a (000-1) C surface suitably is provided.

以下、本発明の一実施形態を説明する。
本実施形態の研磨用組成物は、所定量のヨウ素化合物とコロイダルシリカゾルを混合し、必要に応じて水で希釈することにより製造される。従って、本実施形態の研磨用組成物は、砥粒としてのコロイダルシリカ、ヨウ素化合物及び水から実質的になる。本実施形態の研磨用組成物は、４Ｈ−ＳｉＣ単結晶基板又は６Ｈ−ＳｉＣ単結晶基板を研磨する用途、より具体的には４Ｈ−ＳｉＣ単結晶基板又は６Ｈ−ＳｉＣ単結晶基板の（０００−１）Ｃ面を研磨する用途で使用される。 Hereinafter, an embodiment of the present invention will be described.
The polishing composition of the present embodiment is produced by mixing a predetermined amount of an iodine compound and colloidal silica sol and diluting with water as necessary. Therefore, the polishing composition of this embodiment substantially comprises colloidal silica as an abrasive grain, an iodine compound, and water. The polishing composition of the present embodiment is used for polishing a 4H—SiC single crystal substrate or a 6H—SiC single crystal substrate, more specifically, (000− of 4H—SiC single crystal substrate or 6H—SiC single crystal substrate. 1) Used for polishing the C surface.

研磨用組成物中のコロイダルシリカの含有量が０．０５質量％よりも少ない場合、さらに言えば０．１質量％よりも少ない場合、もっと言えば１質量％よりも少ない場合には、研磨用組成物が十分な研磨能力が有さない虞がある。従って、より高い研磨速度を得るためには、研磨用組成物中のコロイダルシリカの含有量は０．０５質量％以上であることが好ましく、より好ましくは０．１質量％以上、最も好ましくは１質量％以上である。一方、研磨用組成物中のコロイダルシリカの含有量が４０質量％よりも多い場合、さらに言えば３５質量％よりも多い場合、もっと言えば３０質量％よりも多い場合には、研磨速度が飽和に近づいてあまり上昇しなくなるので経済的でない。従って、研磨用組成物中のコロイダルシリカの含有量は４０質量％以下であることが好ましく、より好ましくは３５質量％以下、最も好ましくは３０質量％以下である。   If the content of colloidal silica in the polishing composition is less than 0.05% by mass, more specifically less than 0.1% by mass, more specifically less than 1% by mass, There is a possibility that the composition does not have sufficient polishing ability. Therefore, in order to obtain a higher polishing rate, the content of colloidal silica in the polishing composition is preferably 0.05% by mass or more, more preferably 0.1% by mass or more, and most preferably 1%. It is at least mass%. On the other hand, when the content of colloidal silica in the polishing composition is more than 40% by mass, further more than 35% by mass, more specifically more than 30% by mass, the polishing rate is saturated. It is not economical because it does not rise so much as it approaches. Therefore, the content of colloidal silica in the polishing composition is preferably 40% by mass or less, more preferably 35% by mass or less, and most preferably 30% by mass or less.

平均一次粒子径が５ｎｍよりも小さいコロイダルシリカ、さらに言えば平均一次粒子径が１５ｎｍよりも小さいコロイダルシリカ、もっと言えば平均一次粒子径が２５ｎｍよりも小さいコロイダルシリカは、（０００−１）Ｃ面を研磨する能力があまり高くない。従って、より高い研磨速度を得るためには、研磨用組成物に含まれるコロイダルシリカの平均一次粒子径は５ｎｍ以上であることが好ましく、より好ましくは１５ｎｍ以上、最も好ましくは２５ｎｍ以上である。一方、コロイダルシリカの平均一次粒子径が１２０ｎｍよりも大きい場合、さらに言えば１００ｎｍよりも大きい場合、もっと言えば８５ｎｍよりも大きい場合には、研磨用組成物が十分な研磨能力を発揮するためには研磨用組成物中のコロイダルシリカの含有量をかなり高くする必要が生じる。従って、研磨用組成物のコスト低減のためには、研磨用組成物に含まれるコロイダルシリカの平均一次粒子径は１２０ｎｍ以下であることが好ましく、より好ましくは１００ｎｍ以下、最も好ましくは８５ｎｍ以下である。なお、コロイダルシリカの平均一次粒子径は、例えばＢＥＴ法により測定される比表面積から算出される。   Colloidal silica having an average primary particle size of less than 5 nm, more specifically, colloidal silica having an average primary particle size of less than 15 nm, more specifically, colloidal silica having an average primary particle size of less than 25 nm is a (000-1) C plane. The ability to polish is not so high. Therefore, in order to obtain a higher polishing rate, the average primary particle diameter of the colloidal silica contained in the polishing composition is preferably 5 nm or more, more preferably 15 nm or more, and most preferably 25 nm or more. On the other hand, when the average primary particle size of colloidal silica is larger than 120 nm, more specifically, when larger than 100 nm, and more specifically, when larger than 85 nm, the polishing composition exhibits sufficient polishing ability. Therefore, the content of colloidal silica in the polishing composition needs to be considerably increased. Therefore, in order to reduce the cost of the polishing composition, the average primary particle diameter of the colloidal silica contained in the polishing composition is preferably 120 nm or less, more preferably 100 nm or less, and most preferably 85 nm or less. . In addition, the average primary particle diameter of colloidal silica is computed from the specific surface area measured by BET method, for example.

研磨速度の向上のために研磨用組成物に含まれるヨウ素化合物はヨウ素酸、過ヨウ素酸及びそれらの塩のいずれであってもよいが、中でも過ヨウ素酸又は過ヨウ素酸塩であることが好ましく、より好ましくはオルト過ヨウ素酸（Ｈ５ＩＯ６）又はメタ過ヨウ素酸ナトリウム（ＮａＩＯ４）である。過ヨウ素酸及び過ヨウ素酸塩はヨウ素酸及びヨウ素酸塩に比べて酸化還元電位が高く酸化力が強い点で好ましく、オルト過ヨウ素酸及びメタ過ヨウ素酸ナトリウムは他の過ヨウ素酸及び過ヨウ素酸塩に比べて入手が容易である点で好ましい。 The iodine compound contained in the polishing composition for improving the polishing rate may be any of iodic acid, periodic acid and salts thereof, but among them, periodic acid or periodate is preferable. , more preferably orthoperiodic acid (H 5 IO 6) or sodium metaperiodate (NaIO 4). Periodic acid and periodate are preferred in that they have a higher oxidation-reduction potential and stronger oxidizing power than iodic acid and iodate, and orthoperiodic acid and sodium metaperiodate are preferred for other periodic acids and periodate. This is preferable because it is easier to obtain than the acid salt.

研磨用組成物中のヨウ素化合物の含有量が０．１ｇ／Ｌよりも少ない場合、さらに言えば１ｇ／Ｌよりも少ない場合、もっと言えば５ｇ／Ｌよりも少ない場合には、あまり高い研磨速度で（０００−１）Ｃ面を研磨することができない虞がある。従って、より高い研磨速度を得るためには、研磨用組成物中のヨウ素化合物の含有量は０．１ｇ／Ｌ以上であることが好ましく、より好ましくは１ｇ／Ｌ以上、最も好ましくは５ｇ／Ｌ以上である。一方、研磨用組成物中のヨウ素化合物の含有量が５００ｇ／Ｌよりも多い場合、さらに言えば２５０ｇ／Ｌよりも多い場合、もっと言えば１００ｇ／Ｌよりも多い場合には研磨パッドの劣化が早まる虞があり、それに加えて研磨用組成物に含まれるヨウ素化合物がヨウ素酸塩又は過ヨウ素酸塩である場合には、研磨用組成物中に沈殿が生じる虞もある。従って、こうした不具合を避けるためには、研磨用組成物中のヨウ素化合物の含有量は５００ｇ／Ｌ以下であることが好ましく、より好ましくは２５０ｇ／Ｌ以下、最も好ましくは１００ｇ／Ｌ以下である。   If the content of the iodine compound in the polishing composition is less than 0.1 g / L, more specifically less than 1 g / L, more specifically less than 5 g / L, the polishing rate is too high. Therefore, the (000-1) C surface may not be polished. Therefore, in order to obtain a higher polishing rate, the content of the iodine compound in the polishing composition is preferably 0.1 g / L or more, more preferably 1 g / L or more, most preferably 5 g / L. That's it. On the other hand, when the content of the iodine compound in the polishing composition is more than 500 g / L, more specifically more than 250 g / L, more specifically more than 100 g / L, the polishing pad is deteriorated. In addition to this, when the iodine compound contained in the polishing composition is an iodate or periodate, precipitation may occur in the polishing composition. Therefore, in order to avoid such problems, the content of the iodine compound in the polishing composition is preferably 500 g / L or less, more preferably 250 g / L or less, and most preferably 100 g / L or less.

研磨用組成物のｐＨは、（０００−１）Ｃ面の好適な研磨を実現するためには８以下であることが必須である。ただし、たとえｐＨが８以下であってもｐＨが高くなるにつれて（０００−１）Ｃ面を研磨する研磨用組成物の能力は低下する傾向がある。従って、より高い研磨速度を得るためには、研磨用組成物のｐＨは７．５以下であることが好ましく、より好ましくは７以下である。一方、研磨用組成物のｐＨが低すぎると、研磨機が腐食されやすくなる。従って、研磨機の腐食を防ぐという観点からすると、研磨用組成物のｐＨは０．５以上であることが好ましく、より好ましくは０．８以上、最も好ましくは１以上である。   The pH of the polishing composition must be 8 or less in order to achieve suitable polishing of the (000-1) C plane. However, even if the pH is 8 or less, the ability of the polishing composition to polish the (000-1) C-plane tends to decrease as the pH increases. Therefore, in order to obtain a higher polishing rate, the pH of the polishing composition is preferably 7.5 or less, more preferably 7 or less. On the other hand, when the pH of the polishing composition is too low, the polishing machine is easily corroded. Therefore, from the viewpoint of preventing corrosion of the polishing machine, the pH of the polishing composition is preferably 0.5 or more, more preferably 0.8 or more, and most preferably 1 or more.

本実施形態によれば以下の利点が得られる。
・ 本実施形態の研磨用組成物は、従来の研磨用組成物に比べて、４Ｈ−ＳｉＣ単結晶基板又は６Ｈ−ＳｉＣ単結晶基板の（０００−１）Ｃ面を高い研磨速度で研磨する能力を有する。これは、本実施形態の研磨用組成物に含まれているヨウ素酸、過ヨウ素酸又はそれらの塩からなるヨウ素化合物がｐＨ８以下の領域において（０００−１）Ｃ面を酸化するのに十分な酸化力を発揮するためと考えられる。 According to the present embodiment, the following advantages can be obtained.
-The polishing composition of this embodiment has the ability to polish the (000-1) C face of a 4H-SiC single crystal substrate or a 6H-SiC single crystal substrate at a higher polishing rate than a conventional polishing composition. Have This is sufficient for the iodine compound consisting of iodic acid, periodic acid or salts thereof contained in the polishing composition of the present embodiment to oxidize the (000-1) C-plane in the region of pH 8 or lower. This is thought to be due to its oxidizing power.

・ 表面欠陥の一種であるピットは、研磨対象物の研磨されやすい部分の研磨が研磨されにくい部分の研磨に比べて速やかに進行する結果生じるものであり、研磨速度が高いほど発生しにくい。従って、従来の研磨用組成物に比べて（０００−１）Ｃ面を高い研磨速度で研磨する能力を有する本実施形態の研磨用組成物を用いて研磨した後の（０００−１）Ｃ面には、従来の研磨用組成物を用いて研磨した後の（０００−１）Ｃ面に比べて、ピットが少ない。   -A pit which is a kind of surface defect is generated as a result of a faster progress of polishing of an easily polished portion of an object to be polished than polishing of a difficultly polished portion, and is less likely to occur as the polishing rate is higher. Therefore, the (000-1) C surface after polishing with the polishing composition of this embodiment having the ability to polish the (000-1) C surface at a higher polishing rate than the conventional polishing composition. There are few pits compared with the (000-1) C surface after grinding | polishing using the conventional polishing composition.

前記実施形態は次のように変更されてもよい。
・ 前記実施形態の研磨用組成物に含まれる砥粒は、フュームドシリカのようなコロイダルシリカ以外のシリカであってもよいし、あるいはアルミナ又は酸化クロムであってもよい。ただし、シリカ（特にコロイダルシリカ）を用いた場合には、アルミナや酸化クロムを用いた場合に比べて、研磨後の研磨対象物の表面に傷が生じにくいので、好ましくはシリカ（特にコロイダルシリカ）である。 The embodiment may be modified as follows.
-The abrasive grain contained in the polishing composition of the embodiment may be silica other than colloidal silica such as fumed silica, or may be alumina or chromium oxide. However, when silica (particularly colloidal silica) is used, scratches are less likely to occur on the surface of the object to be polished after polishing than when alumina or chromium oxide is used. Therefore, silica (particularly colloidal silica) is preferred. It is.

・ 前記実施形態の研磨用組成物に含まれるコロイダルシリカを省いてもよい。すなわち、前記実施形態の研磨用組成物は、ヨウ素化合物及び水から実質的になるものであってもよい。ただし、より高い研磨速度を得るためには、コロイダルシリカなどの砥粒を含有することが好ましい。   -You may omit the colloidal silica contained in the polishing composition of the said embodiment. That is, the polishing composition of the embodiment may be substantially composed of an iodine compound and water. However, in order to obtain a higher polishing rate, it is preferable to contain abrasive grains such as colloidal silica.

・ 前記実施形態の研磨用組成物には必要に応じてｐＨ調整剤や防腐剤、消泡剤のような公知の添加剤を添加してもよい。
・ 前記実施形態の研磨用組成物は、（０００１）Ｓｉ面を除く（０００−１）Ｃ面以外の４Ｈ−ＳｉＣ単結晶基板又は６Ｈ−ＳｉＣ単結晶基板の面を研磨する用途で使用されてもよい。あるいは、３Ｃ−ＳｉＣ単結晶基板のような立方晶炭化ケイ素単結晶からなる研磨対象物を研磨する用途で使用されてもよい。また、炭化ケイ素単結晶基板以外の炭化ケイ素単結晶からなる研磨対象物を研磨する用途で使用されてもよいし、あるいは炭化ケイ素単結晶からなる研磨対象物以外の研磨対象物を研磨する用途で使用されてもよい。ただし、前記実施形態の研磨用組成物は、従来の研磨用組成物に比べて、炭化ケイ素単結晶からなる研磨対象物、とりわけ４Ｈ−ＳｉＣ単結晶基板又は６Ｈ−ＳｉＣ単結晶基板の（０００−１）Ｃ面を研磨する能力が特に高い。従って、炭化ケイ素単結晶からなる研磨対象物を研磨する用途で使用されることが好ましく、４Ｈ−ＳｉＣ単結晶基板又は６Ｈ−ＳｉＣ単結晶基板の（０００−１）Ｃ面を研磨する用途で使用されることがより好ましい。 -You may add well-known additives, such as a pH adjuster, antiseptic | preservative, and an antifoamer, to the polishing composition of the said embodiment as needed.
The polishing composition of the above embodiment is used for polishing a surface of a 4H—SiC single crystal substrate or a 6H—SiC single crystal substrate other than the (000-1) C surface excluding the (0001) Si surface. Also good. Or you may use for the use which grind | polishes the grinding | polishing target object which consists of a cubic silicon carbide single crystal like a 3C-SiC single crystal substrate. Further, it may be used for polishing a polishing object made of a silicon carbide single crystal other than a silicon carbide single crystal substrate, or for an application of polishing a polishing object other than a polishing object made of a silicon carbide single crystal. May be used. However, the polishing composition of the above embodiment is an object to be polished made of a silicon carbide single crystal, particularly a 4H-SiC single crystal substrate or a 6H-SiC single crystal substrate (000-) as compared with a conventional polishing composition. 1) The ability to polish the C surface is particularly high. Therefore, it is preferably used for the purpose of polishing a polishing object composed of a silicon carbide single crystal, and used for the purpose of polishing the (000-1) C surface of a 4H-SiC single crystal substrate or a 6H-SiC single crystal substrate. More preferably.

次に、本発明の実施例及び比較例を説明する。
砥粒、ヨウ素化合物又はそれに代わる化合物、及びｐＨ調整剤を適宜に混合し、必要に応じて水で希釈することにより実施例１〜１６及び比較例１〜１１の研磨用組成物を調製した。各研磨用組成物中の砥粒、ヨウ素化合物又はそれに代わる化合物及びｐＨ調整剤の詳細並びに各研磨用組成物のｐＨは表１に示すとおりである。 Next, examples and comparative examples of the present invention will be described.
The polishing composition of Examples 1-16 and Comparative Examples 1-11 was prepared by mixing an abrasive grain, an iodine compound or the compound replaced with it, and a pH adjuster suitably, and diluting with water as needed. Table 1 shows the details of the abrasive grains, the iodine compound or the alternative compound, and the pH adjuster in each polishing composition, and the pH of each polishing composition.

まず、平均粒子径０．５μｍの多結晶ダイヤモンド砥粒を含むスラリーを用いて表２に示す研磨条件で炭化ケイ素単結晶基板の（０００−１）Ｃ面を予備研磨した。その後、予備研磨した炭化ケイ素単結晶基板の（０００−１）Ｃ面を実施例１〜１６及び比較例１〜１１の各研磨用組成物を用いて表３に示す研磨条件で仕上げ研磨した。仕上げ研磨前後の基板の重量を測定し、その測定値から算出した研磨速度を表１の“研磨速度”欄に示す。   First, the (000-1) C face of the silicon carbide single crystal substrate was pre-polished using a slurry containing polycrystalline diamond abrasive grains having an average particle diameter of 0.5 μm under the polishing conditions shown in Table 2. Thereafter, the (000-1) C face of the silicon carbide single crystal substrate that had been pre-polished was finish-polished using the polishing compositions of Examples 1 to 16 and Comparative Examples 1 to 11 under the polishing conditions shown in Table 3. The weight of the substrate before and after the final polishing is measured, and the polishing rate calculated from the measured value is shown in the “Polishing rate” column of Table 1.

また、仕上げ研磨後の（０００−１）Ｃ面を光学式顕微鏡により倍率５０倍で観察した。その観察結果に基づいて各研磨用組成物による表面欠陥の発生状況について評価した結果を表１の“表面状態”欄に示す。同欄中、○は、ピット、段差及び面あれが認められなかったことを示し、×は、ピット、段差及び面あれのいずれかが認められたことを示す。なお、仕上げ研磨に先立って予備研磨後の（０００−１）Ｃ面を光学式顕微鏡により倍率５０倍で観察したときには、ピット、段差及び面あれはいずれの場合も認められなかった。   Further, the (000-1) C surface after finish polishing was observed with an optical microscope at a magnification of 50 times. The results of evaluating the occurrence of surface defects by each polishing composition based on the observation results are shown in the “Surface condition” column of Table 1. In the same column, ◯ indicates that no pit, step, or surface roughness was observed, and x indicates that any of the pit, step, or surface roughness was recognized. In addition, when the (000-1) C plane after preliminary polishing was observed with an optical microscope at a magnification of 50 prior to the final polishing, no pits, steps, or surface irregularities were observed.

Figure 2007027663
Figure 2007027663

Figure 2007027663
Figure 2007027663

Figure 2007027663
表１に示すように、実施例１〜１６の研磨用組成物によれば、特許文献１の研磨用組成物に相当する比較例１をはじめとして比較例２〜１１の研磨用組成物に比べて、高い研磨速度が得られた。また実施例１〜１６の研磨用組成物は研磨後の表面状態に関しても満足できるものであった。
Figure 2007027663
 As shown in Table 1, according to the polishing composition of Examples 1-16, compared with the polishing composition of Comparative Examples 2-11 including Comparative Example 1 corresponding to the polishing composition of Patent Document 1. Thus, a high polishing rate was obtained. Moreover, the polishing composition of Examples 1-16 was satisfactory also about the surface state after grinding | polishing.

前記実施形態より把握できる技術的思想について以下に記載する。
・ 請求項１〜４のいずれか一項に記載の研磨用組成物を用いて炭化ケイ素単結晶からなる研磨対象物を研磨する研磨方法。これによれば、（０００−１）Ｃ面を好適に研磨することができる研磨方法が提供される。 The technical idea that can be grasped from the embodiment will be described below.
-Polishing method which grind | polishes the grinding | polishing target object which consists of a silicon carbide single crystal using the polishing composition as described in any one of Claims 1-4. According to this, the grinding | polishing method which can grind | polish a (000-1) C surface suitably is provided.

・ 請求項１〜４のいずれか一項に記載の研磨用組成物を用いて炭化ケイ素単結晶からなる研磨対象物を研磨する工程を経て得られる研磨製品。これによれば、（０００−１）Ｃ面が好適に研磨された研磨製品が提供される。   -Polishing product obtained through the process of grind | polishing the grinding | polishing target object which consists of a silicon carbide single crystal using the polishing composition as described in any one of Claims 1-4. According to this, a polished product in which the (000-1) C surface is suitably polished is provided.

Claims (4)

半導体単結晶からなる研磨対象物を研磨する用途で使用される研磨用組成物であって、ヨウ素化合物を含有してｐＨが８以下である研磨用組成物。   A polishing composition for use in polishing an object to be polished comprising a semiconductor single crystal, comprising an iodine compound and having a pH of 8 or less. 砥粒をさらに含有する請求項１に記載の研磨用組成物。   The polishing composition according to claim 1, further comprising abrasive grains. 前記ヨウ素化合物がヨウ素酸、過ヨウ素酸又はそれらの塩からなる請求項１又は２に記載の研磨用組成物。   The polishing composition according to claim 1 or 2, wherein the iodine compound comprises iodic acid, periodic acid, or a salt thereof. 前記研磨対象物が炭化ケイ素単結晶からなる請求項１〜３のいずれか一項に記載の研磨用組成物。   The polishing composition according to any one of claims 1 to 3, wherein the polishing object is made of a silicon carbide single crystal.
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