JP2007019455A - 白色発光素子 - Google Patents
白色発光素子 Download PDFInfo
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- JP2007019455A JP2007019455A JP2006023143A JP2006023143A JP2007019455A JP 2007019455 A JP2007019455 A JP 2007019455A JP 2006023143 A JP2006023143 A JP 2006023143A JP 2006023143 A JP2006023143 A JP 2006023143A JP 2007019455 A JP2007019455 A JP 2007019455A
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- 150000004767 nitrides Chemical class 0.000 claims abstract description 43
- 239000004065 semiconductor Substances 0.000 claims abstract description 40
- 230000004888 barrier function Effects 0.000 claims abstract description 33
- 239000013078 crystal Substances 0.000 claims abstract description 23
- 239000002096 quantum dot Substances 0.000 claims description 25
- 239000000758 substrate Substances 0.000 abstract description 7
- 238000010168 coupling process Methods 0.000 abstract 1
- 238000005859 coupling reaction Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 description 14
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 7
- 239000000969 carrier Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 230000006798 recombination Effects 0.000 description 4
- 238000005215 recombination Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000004807 localization Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005191 phase separation Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
【解決手段】モノリシックの白色発光素子30である半導体発光素子は、基板31上に第1及び第2導電型窒化物層とその間に順次に形成された異なる波長光を発光する複数の活性層35〜37を有する。これら活性層は複数の第1量子障壁層37aと第1量子井戸層37bで構成された少なくとも一つの第1活性層と、上記第1活性層の発光波長より大きい発光波長を有する第2活性層を含み、上記第2活性層は複数の第2量子障壁層とその複数の第2量子障壁層との間に各々形成された多数の量子点または結晶体(crystallites)37bからなる少なくとも一つの不連続的な量子井戸構造を有する。
【選択図】 図3
Description
12 バッファ層
11 基板
13 第1導電型窒化物層
15、16、17 活性層
14a、14b、14c バリア層
18 第2導電型窒化物層
19a、19b 電極
30、60 白色発光素子
32、52、62 バッファ層
31、51、61 基板
33、53、63 第1導電型窒化物層
38、58、68 第2導電型窒化物層
35、36、56 緑色活性層
37、57 赤色活性層
37a、57a、67a 量子障壁層
37b、57b、67b 量子点(結晶体)(量子井戸構造)
55 青色活性層
65 第1活性層
67 第2活性層
Claims (10)
- 第1及び第2導電型窒化物層とその間に順次に形成された異なる波長の光を発光する複数の活性層を有する窒化物半導体発光素子において、
前記複数の活性層は複数の第1量子障壁層と第1量子井戸層で構成された少なくとも一つの第1活性層と、前記第1活性層の発光波長より大きい発光波長を有する第2活性層を含み、
前記第2活性層は複数の第2量子障壁層と前記複数の第2量子障壁層との間に各々形成された多数の量子点または結晶体(crystallites)からなる少なくとも一つの不連続的な量子井戸構造を有することを特徴とする半導体発光素子。 - 前記多数の量子点または結晶体が形成された総面積は前記第2量子障壁層上面の全面積に対し20〜75%であることを特徴とする請求項1に記載の半導体発光素子。
- 前記活性層は少なくとも4個の量子障壁層を含み、前記少なくとも4個の量子障壁層の間に各々形成された多数の量子点または結晶体からなる少なくとも3個の不連続的な量子井戸構造を有することを特徴とする請求項1または2に記載の半導体発光素子。
- 前記第1活性層は約450〜475nmの発光波長を有し、前記第2活性層は約550〜600nmの発光波長を有することを特徴とする請求項1〜3のいずれか一項に記載の半導体発光素子。
- 前記第1活性層は各々約450〜475nmの発光波長と約510〜535nmの発光波長を有する2個の活性層を含み、前記第2活性層は約600〜635nmの発光波長を有することを特徴とする請求項1〜3のいずれか一項に記載の半導体発光素子。
- 前記少なくとも一つの第1活性層はInx1Ga1-x1N(0≦x1≦1)からなることを特徴とする請求項1〜5のいずれか一項に記載の半導体発光素子。
- 前記第2活性層はInx2Ga1-x2N(0≦x2≦1)からなることを特徴とする請求項1〜6のいずれか一項に記載の半導体発光素子。
- 前記第2活性層中前記不連続的な量子井戸構造はAlyInzGa1-(y+z)N(0<y<1、0<z<1)または(AlvGa1-v)uIn1-uP(0≦v≦1、0≦u≦1)からなることを特徴とする請求項7に記載の半導体発光素子。
- 前記第1及び第2導電型窒化物半導体層は各々n型及びp型窒化物半導体層であり、
前記第2活性層は前記第2導電型窒化物半導体層に隣接して位置したことを特徴とする請求項1〜8のいずれか一項に記載の半導体発光素子。 - 前記第1及び第2導電型窒化物半導体層は各々n型及びp型窒化物半導体層であり、前記少なくとも一つの第1活性層は異なる発光波長を有する複数個であり、
前記複数の第1活性層及び前記第2活性層はその発光波長が長波長であるほど前記第2導電型窒化物半導体層に近接して位置するように配列されたことを特徴とする請求項1〜8のいずれか一項に記載の半導体発光素子。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050061101A KR100674858B1 (ko) | 2005-07-07 | 2005-07-07 | 백색 발광소자 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007019455A true JP2007019455A (ja) | 2007-01-25 |
JP4558656B2 JP4558656B2 (ja) | 2010-10-06 |
Family
ID=37562678
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006023143A Expired - Fee Related JP4558656B2 (ja) | 2005-07-07 | 2006-01-31 | 白色発光素子 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20070007541A1 (ja) |
JP (1) | JP4558656B2 (ja) |
KR (1) | KR100674858B1 (ja) |
CN (1) | CN1893128A (ja) |
DE (1) | DE102006002151B4 (ja) |
TW (1) | TWI291774B (ja) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006310819A (ja) * | 2005-03-31 | 2006-11-09 | Showa Denko Kk | 窒化ガリウム系化合物半導体積層物およびその製造方法 |
JP2010503228A (ja) * | 2006-09-08 | 2010-01-28 | エージェンシー フォー サイエンス,テクノロジー アンド リサーチ | 波長可変発光ダイオード |
JP2011086853A (ja) * | 2009-10-19 | 2011-04-28 | Kyoto Univ | フォトニック結晶発光ダイオード |
US8525197B2 (en) | 2010-07-16 | 2013-09-03 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device and method for manufacturing same |
JP2018516466A (ja) * | 2015-06-05 | 2018-06-21 | オステンド・テクノロジーズ・インコーポレーテッド | 多重活性層へのキャリア注入を選定した発光構造 |
JP2019117950A (ja) * | 2019-04-08 | 2019-07-18 | ローム株式会社 | 電子部品 |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102007058723A1 (de) * | 2007-09-10 | 2009-03-12 | Osram Opto Semiconductors Gmbh | Lichtemittierende Struktur |
KR100936001B1 (ko) * | 2007-12-17 | 2010-01-08 | 삼성전기주식회사 | 질화물 반도체 발광소자 및 그 제조 방법 |
KR101068866B1 (ko) * | 2009-05-29 | 2011-09-30 | 삼성엘이디 주식회사 | 파장변환시트 및 이를 이용한 발광장치 |
DE102009059887A1 (de) * | 2009-12-21 | 2011-06-22 | OSRAM Opto Semiconductors GmbH, 93055 | Optoelektronischer Halbleiterchip |
TWI566429B (zh) * | 2010-07-09 | 2017-01-11 | Lg伊諾特股份有限公司 | 發光裝置 |
US8525148B2 (en) | 2010-07-16 | 2013-09-03 | Micron Technology, Inc. | Solid state lighting devices without converter materials and associated methods of manufacturing |
DE102011115312B4 (de) * | 2011-09-29 | 2022-03-10 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Halbleiterschichtenfolge, optoelektronischer Halbleiterchip und Verfahren zur Herstellung einer Halbleiterschichtenfolge |
CN103531681B (zh) * | 2013-11-08 | 2016-08-03 | 华灿光电(苏州)有限公司 | 一种GaN基白光发光二极管及其制备方法 |
DE102014108282A1 (de) * | 2014-06-12 | 2015-12-17 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauelement, Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements sowie Lichtquelle mit einem optoelektronischen Halbleiterbauelement |
CN105552183B (zh) * | 2015-12-31 | 2019-04-16 | 厦门市三安光电科技有限公司 | 白光发光二极管及其制作方法 |
TWI676263B (zh) * | 2018-12-28 | 2019-11-01 | 光鋐科技股份有限公司 | 多波長發光二極體磊晶結構 |
CN109830575B (zh) * | 2019-01-09 | 2021-06-04 | 武汉光迅科技股份有限公司 | 一种超辐射发光二极管外延片、外延片制备方法及芯片 |
CN113410347A (zh) * | 2021-08-03 | 2021-09-17 | 錼创显示科技股份有限公司 | 磊晶结构及微型发光元件 |
US20230282766A1 (en) * | 2022-03-03 | 2023-09-07 | Seoul Viosys Co., Ltd | Monolithic di-chromatic device and light emitting module having the same |
US20230335673A1 (en) * | 2022-03-17 | 2023-10-19 | Seoul Viosys Co., Ltd. | Light emitting diode and light emitting device having the same |
Citations (5)
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JP2002232001A (ja) * | 2000-11-30 | 2002-08-16 | Ngk Insulators Ltd | 半導体発光素子 |
JP2002252371A (ja) * | 2001-02-23 | 2002-09-06 | Toshiba Corp | 半導体発光装置 |
JP2003078169A (ja) * | 1998-09-21 | 2003-03-14 | Nichia Chem Ind Ltd | 発光素子 |
JP2004179493A (ja) * | 2002-11-28 | 2004-06-24 | Rohm Co Ltd | 半導体発光素子 |
JP2004327719A (ja) * | 2003-04-24 | 2004-11-18 | Shin Etsu Handotai Co Ltd | 発光素子 |
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TWI233697B (en) * | 2003-08-28 | 2005-06-01 | Genesis Photonics Inc | AlInGaN light-emitting diode with wide spectrum and solid-state white light device |
CN1275337C (zh) * | 2003-09-17 | 2006-09-13 | 北京工大智源科技发展有限公司 | 高效高亮度多有源区隧道再生白光发光二极管 |
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2005
- 2005-07-07 KR KR1020050061101A patent/KR100674858B1/ko not_active IP Right Cessation
-
2006
- 2006-01-13 US US11/331,751 patent/US20070007541A1/en not_active Abandoned
- 2006-01-17 DE DE102006002151A patent/DE102006002151B4/de not_active Expired - Fee Related
- 2006-01-26 CN CNA2006100029645A patent/CN1893128A/zh active Pending
- 2006-01-31 JP JP2006023143A patent/JP4558656B2/ja not_active Expired - Fee Related
- 2006-02-15 TW TW095105041A patent/TWI291774B/zh not_active IP Right Cessation
Patent Citations (5)
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JP2003078169A (ja) * | 1998-09-21 | 2003-03-14 | Nichia Chem Ind Ltd | 発光素子 |
JP2002232001A (ja) * | 2000-11-30 | 2002-08-16 | Ngk Insulators Ltd | 半導体発光素子 |
JP2002252371A (ja) * | 2001-02-23 | 2002-09-06 | Toshiba Corp | 半導体発光装置 |
JP2004179493A (ja) * | 2002-11-28 | 2004-06-24 | Rohm Co Ltd | 半導体発光素子 |
JP2004327719A (ja) * | 2003-04-24 | 2004-11-18 | Shin Etsu Handotai Co Ltd | 発光素子 |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006310819A (ja) * | 2005-03-31 | 2006-11-09 | Showa Denko Kk | 窒化ガリウム系化合物半導体積層物およびその製造方法 |
JP2010503228A (ja) * | 2006-09-08 | 2010-01-28 | エージェンシー フォー サイエンス,テクノロジー アンド リサーチ | 波長可変発光ダイオード |
JP2011086853A (ja) * | 2009-10-19 | 2011-04-28 | Kyoto Univ | フォトニック結晶発光ダイオード |
US8525197B2 (en) | 2010-07-16 | 2013-09-03 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device and method for manufacturing same |
US8647905B2 (en) | 2010-07-16 | 2014-02-11 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device and method for manufacturing same |
JP2018516466A (ja) * | 2015-06-05 | 2018-06-21 | オステンド・テクノロジーズ・インコーポレーテッド | 多重活性層へのキャリア注入を選定した発光構造 |
JP2021122059A (ja) * | 2015-06-05 | 2021-08-26 | オステンド・テクノロジーズ・インコーポレーテッド | 多重活性層へのキャリア注入を選定した発光構造 |
US11329191B1 (en) | 2015-06-05 | 2022-05-10 | Ostendo Technologies, Inc. | Light emitting structures with multiple uniformly populated active layers |
US11335829B2 (en) | 2015-06-05 | 2022-05-17 | Ostendo Technologies, Inc. | Multi-color light emitting structures with controllable emission color |
JP2019117950A (ja) * | 2019-04-08 | 2019-07-18 | ローム株式会社 | 電子部品 |
Also Published As
Publication number | Publication date |
---|---|
US20070007541A1 (en) | 2007-01-11 |
JP4558656B2 (ja) | 2010-10-06 |
TWI291774B (en) | 2007-12-21 |
DE102006002151A1 (de) | 2007-01-11 |
KR20070006087A (ko) | 2007-01-11 |
KR100674858B1 (ko) | 2007-01-29 |
TW200703713A (en) | 2007-01-16 |
CN1893128A (zh) | 2007-01-10 |
DE102006002151B4 (de) | 2011-07-21 |
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