JP2007014909A - Exhaust gas treatment apparatus - Google Patents

Exhaust gas treatment apparatus Download PDF

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JP2007014909A
JP2007014909A JP2005200678A JP2005200678A JP2007014909A JP 2007014909 A JP2007014909 A JP 2007014909A JP 2005200678 A JP2005200678 A JP 2005200678A JP 2005200678 A JP2005200678 A JP 2005200678A JP 2007014909 A JP2007014909 A JP 2007014909A
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pipe
valve
exhaust gas
opening
branch line
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JP4501799B2 (en
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Takashi Ishizuka
貴司 石塚
Hideyuki Doi
秀之 土井
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Sumitomo Electric Industries Ltd
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Sumitomo Electric Industries Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To provide an exhaust gas treating apparatus reducing generation of a chemical reaction caused by untreated gaseous components in a chemicals cylinder. <P>SOLUTION: This exhaust gas treating apparatus is provided with: an input 17 receiving exhaust gas; a first pipe B17 having an end part C1a connected to the input 17; an opening/closing valve V1 having an opening V1a connected to an end part C1b of the first pipe B17 and opening/closing a passage of gas flowing from the first pipe B17 through the opening V1a; a second pipe B19 having an end part C3a connected to an opening V1b of the valve V1; the chemicals cylinder 21 having a flow-in port 21d connected to an end part C3b of the second pipe B19 and a flow-out port 21e and treating exhaust gas; an output 19 connected to the flow-out port 21e through a third pipe B20 and discharging gas treated in the chemicals cylinder 21; and a detecting device 23 connected to the second pipe B19 via a first branch line L7 branched from the second pipe B19 and detecting at least any one of oxygen concentration and moisture content. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は、排ガス処理装置に関する。   The present invention relates to an exhaust gas treatment apparatus.

例えば特許文献１には、半導体製造プロセスにおいて生じる排ガスを処理するための排ガス処理装置（乾式除害装置）に係る技術が記載されている。この排ガス処理装置は、酸素や水分と高い反応性を有するガス成分を排ガスから除去するための薬剤を収容する薬剤筒（除害剤充填カラム）を備える。この薬剤筒内には、酸素や水分と反応し易いガス成分（以下、未処理のガス成分という場合がある。）が薬剤や薬剤筒の内壁に付着する等して存在している場合がある。このため、排ガス処理装置内への酸素や水分の流入を監視する必要が生じる。このような必要性から、排ガス処理装置内に流入するガスの配管には、酸素濃度計又は水分計等の検出装置が設けられている。
特開平６−４７２６９号公報 For example, Patent Document 1 describes a technique related to an exhaust gas treatment device (dry detoxification device) for treating exhaust gas generated in a semiconductor manufacturing process. This exhaust gas treatment apparatus includes a chemical cylinder (detoxifying agent-filled column) that contains a chemical for removing gas components having high reactivity with oxygen and moisture from the exhaust gas. In this medicine cylinder, there are cases where a gas component (hereinafter sometimes referred to as an untreated gas component) that easily reacts with oxygen or moisture adheres to the inner wall of the medicine or medicine cylinder. . For this reason, it becomes necessary to monitor the inflow of oxygen and moisture into the exhaust gas treatment apparatus. Because of this necessity, a detection device such as an oxygen concentration meter or a moisture meter is provided in the piping of the gas flowing into the exhaust gas treatment device.
JP-A-6-47269

半導体製造装置のメンテナンス作業や薬剤筒の交換作業等の際には、排ガス処理装置内の配管に酸素や水分が入り込む可能性が生じる。排ガス処理装置内の配管に酸素や水分が入り込んでいると、この酸素や水分が薬剤筒内に入りこむ可能性が生じる。仮に薬剤筒内に酸素や水分が入り込んでいると、この酸素や水分が薬剤筒内の未処理のガス成分と化学反応を起こす懼れが生じる。しかし、上記の検出装置は、排ガス処理装置よりも上流において酸素や水分を検出する。このため、この検出装置では、排ガス処理装置内における酸素や水分の検出ができない。   There is a possibility that oxygen or moisture may enter the pipes in the exhaust gas treatment apparatus during maintenance work of the semiconductor manufacturing apparatus or replacement work of the drug cylinder. If oxygen or moisture enters the piping in the exhaust gas treatment apparatus, there is a possibility that the oxygen or moisture may enter the drug cylinder. If oxygen or moisture enters the medicine cylinder, the oxygen or moisture may cause a chemical reaction with an untreated gas component in the medicine cylinder. However, the detection device detects oxygen and moisture upstream of the exhaust gas treatment device. For this reason, this detection device cannot detect oxygen and moisture in the exhaust gas treatment device.

そこで、本発明の課題は、薬剤筒内における未処理のガス成分による化学反応の発生を低減可能な排ガス処理装置を提供すること。   Then, the subject of this invention is providing the waste gas processing apparatus which can reduce generation | occurrence | production of the chemical reaction by the untreated gas component in a chemical | medical agent cylinder.

本発明の排ガス処理装置は、（ａ）半導体製造プロセスにおいて生じる排ガスを受ける入力と、（ｂ）前記入力に接続された端部を有する第１の配管と、（ｃ）前記第１の配管が有する他の端部に接続された開口を有しており該第１の配管から該開口を介して流れるガスの流路を開閉する第１の開閉弁と、（ｄ）前記開閉弁が有する他の開口に接続された端部を有する第２の配管と、（ｅ）前記第２の配管が有する他の端部に接続された流入口と、流出口とを有しており、前記排ガスを処理するための薬剤筒と、（ｆ）第３の配管を介して前記流出口に接続されており前記薬剤筒によって処理されたガスを排気する出力と、（ｇ）前記第２の配管から分岐した第１の分岐ラインを介して該第２の配管に接続されており酸素濃度及び水分濃度の少なくとも何れかを検出するための検出装置とを備える、ことを特徴とする。   The exhaust gas treatment apparatus of the present invention includes (a) an input for receiving exhaust gas generated in a semiconductor manufacturing process, (b) a first pipe having an end connected to the input, and (c) the first pipe. A first on-off valve that has an opening connected to the other end thereof and opens and closes a flow path of gas flowing from the first pipe through the opening; and (d) the other on-off valve has A second pipe having an end connected to the opening, (e) an inlet connected to the other end of the second pipe, and an outlet. A drug cylinder for processing, (f) an output connected to the outlet through a third pipe and exhausting the gas processed by the drug cylinder, and (g) branched from the second pipe Connected to the second pipe through the first branch line, the oxygen concentration and the moisture concentration. And a detection device for detecting any even without, characterized in that.

半導体製造装置のメンテナンス作業や薬剤筒の交換作業等の際には、酸素及び水分を含む空気が流入口と第１の開閉弁との間にある第２の配管内に入り込む可能性がある。しかし、本発明によれば、検出装置は、第１の分岐ラインを介して第２の配管内にある酸素濃度及び水分濃度の少なくとも何れかを検出できる。従って、酸素や水分の薬剤筒内への流入の可能性が、検出装置による検出結果に基づいて容易且つ正確に判断できる。このため、酸素や水分が薬剤筒内に流入する可能性を低減できる。よって、薬剤筒内における未処理のガス成分による化学反応の発生が低減される。   During maintenance work of a semiconductor manufacturing apparatus, replacement work of a medicine cylinder, or the like, there is a possibility that air containing oxygen and moisture enters the second pipe between the inlet and the first on-off valve. However, according to the present invention, the detection device can detect at least one of the oxygen concentration and the moisture concentration in the second pipe via the first branch line. Therefore, it is possible to easily and accurately determine the possibility of inflow of oxygen or moisture into the medicine cylinder based on the detection result by the detection device. For this reason, possibility that oxygen and a water | moisture content will flow in into a chemical | medical agent cylinder can be reduced. Therefore, generation | occurrence | production of the chemical reaction by the untreated gas component in a chemical | medical agent cylinder is reduced.

更に、本発明では、（ａ）前記検出装置と前記第１の配管とが、該第１の配管から分岐した第２の分岐ラインを介して接続され、（ｂ）前記第２の分岐ラインに設けられており該第２の分岐ラインにおけるガスの流路を開閉する第２の開閉弁と、前記第１の分岐ラインに設けられており該第１の分岐ラインにおけるガスの流路を開閉する第３の開閉弁とを更に備える、のが好ましい。半導体製造装置のメンテナンス作業や薬剤筒の交換作業等の際には、第２の配管内だけでなく第１の配管内にも酸素及び水分を含む空気が入り込む可能性がある。しかし、本発明によれば、検出装置は、第２の配管内だけでなく、第２の分岐ラインを介して第１の配管内にある酸素濃度及び水分濃度の少なくとも何れかを更に検出できる。このため、酸素や水分の薬剤筒内への流入の可能性が、より正確に判断できる。更に、第２の開閉弁と第３の開閉弁とを開閉操作することにより、第１の配管内のみの酸素濃度及び水分濃度の検出、第２の配管内のみの酸素濃度及び水分濃度の検出、或いは、第１の配管内及び第２の配管内の酸素濃度及び水分濃度の検出のうち何れの検出を行うのかが容易に選択できる。   Furthermore, in the present invention, (a) the detection device and the first pipe are connected via a second branch line branched from the first pipe, and (b) the second branch line is connected to the second branch line. A second on-off valve provided to open and close a gas flow path in the second branch line; and a gas flow path in the first branch line provided to the first branch line. It is preferable to further include a third on-off valve. During maintenance work of a semiconductor manufacturing apparatus, replacement work of a drug cylinder, or the like, air containing oxygen and moisture may enter not only the second pipe but also the first pipe. However, according to the present invention, the detection device can further detect at least one of the oxygen concentration and the moisture concentration in the first pipe not only in the second pipe but also in the first pipe via the second branch line. For this reason, the possibility of inflow of oxygen and moisture into the drug cylinder can be determined more accurately. Further, by opening and closing the second on-off valve and the third on-off valve, detection of oxygen concentration and water concentration only in the first pipe, detection of oxygen concentration and water concentration only in the second pipe Alternatively, it is possible to easily select which one of detection of oxygen concentration and moisture concentration in the first pipe and the second pipe is to be detected.

また、本発明の排ガス処理装置は、（ａ）半導体製造プロセスにおいて生じる排ガスを受ける入力と、（ｂ）前記入力に接続された端部を有する第１の配管と、（ｃ）前記第１の配管が有する他の端部に接続された開口を有しており該第１の配管から該開口を介して流れるガスの流路を開閉する第１の開閉弁と、（ｄ）前記開閉弁が有する他の開口に接続された端部を有する第２の配管と、（ｅ）前記第２の配管が有する他の端部に接続された流入口と、流出口とを有しており、前記排ガスを処理するための薬剤筒と、（ｆ）第３の配管を介して前記流出口に接続されており前記薬剤筒によって処理されたガスを排気する出力と、（ｇ）前記第１の配管から分岐した分岐ラインを介して該第１の配管に接続されており酸素濃度及び水分濃度の少なくとも何れかを検出するための検出装置とを備える、ことを特徴とする。   The exhaust gas treatment apparatus of the present invention includes (a) an input for receiving exhaust gas generated in a semiconductor manufacturing process, (b) a first pipe having an end connected to the input, and (c) the first A first on-off valve having an opening connected to the other end of the pipe and opening and closing a flow path of a gas flowing from the first pipe through the opening; and (d) the on-off valve A second pipe having an end connected to the other opening, and (e) an inlet connected to the other end of the second pipe, and an outlet. A chemical cylinder for treating exhaust gas, (f) an output connected to the outlet through a third pipe and exhausting the gas treated by the chemical cylinder, and (g) the first pipe Is connected to the first pipe through a branch line branched from the oxygen concentration and moisture concentration. And a detection device for detecting any even without, characterized in that.

半導体製造装置のメンテナンス作業や薬剤筒の交換作業等の際には、酸素及び水分を含む空気が入力と開閉弁との間にある第１の配管内に入り込む可能性がある。しかし、本発明によれば、検出装置は、分岐ラインを介して第１の配管内にある酸素濃度及び水分濃度の少なくとも何れかを検出できる。従って、酸素や水分の薬剤筒内への流入の可能性が、検出装置による検出結果に基づいて容易且つ正確に判断できる。このため、酸素や水分が薬剤筒内に流入する可能性を低減できる。よって、薬剤筒内における未処理のガス成分による化学反応の発生が低減される。   During maintenance work of a semiconductor manufacturing apparatus, replacement work of a medicine cylinder, etc., there is a possibility that air containing oxygen and moisture may enter the first pipe between the input and the on-off valve. However, according to the present invention, the detection device can detect at least one of the oxygen concentration and the water concentration in the first pipe via the branch line. Therefore, it is possible to easily and accurately determine the possibility of inflow of oxygen or moisture into the medicine cylinder based on the detection result by the detection device. For this reason, possibility that oxygen and a water | moisture content will flow in into a chemical | medical agent cylinder can be reduced. Therefore, generation | occurrence | production of the chemical reaction by the untreated gas component in a chemical | medical agent cylinder is reduced.

更に、本発明では、（ａ）前記開閉弁を駆動する駆動装置と、（ｂ）前記検出装置によって得られる検出結果に基づいて前記駆動装置に前記第１の弁を駆動させる制御装置とを更に備えるのが好ましい。本発明によれば、検出装置によって得られた検出結果に基づいて制御装置が駆動装置に開閉弁の開閉を行わせる。このため、開閉弁の開閉が、検出装置による検出結果に基づき制御装置によって自動的に行える。   Furthermore, in the present invention, (a) a driving device that drives the on-off valve, and (b) a control device that causes the driving device to drive the first valve based on a detection result obtained by the detection device. It is preferable to provide. According to the present invention, the control device causes the drive device to open and close the on-off valve based on the detection result obtained by the detection device. Therefore, the control device can automatically open and close the on-off valve based on the detection result by the detection device.

本発明によれば、薬剤筒内における未処理のガス成分による化学反応の発生を低減可能な排ガス処理装置が提供できる。   ADVANTAGE OF THE INVENTION According to this invention, the waste gas processing apparatus which can reduce generation | occurrence | production of the chemical reaction by the untreated gas component in a chemical | medical agent cylinder can be provided.

以下、図１〜図４を参照して、本発明に係る好適な実施形態について詳細に説明する。なお、可能な場合に、図面の説明においては同一要素には同一符号を付す。   Hereinafter, preferred embodiments according to the present invention will be described in detail with reference to FIGS. Where possible, the same reference numerals are given to the same elements in the description of the drawings.

本実施形態に係る排ガス処理装置１は、図１に示すように、ＣＶＤ炉３を用いた半導体製造装置Ａ内に設置される。そこで、まず、図１を参照して、半導体製造装置Ａの構成について説明する。半導体製造装置Ａには炉室５及び排ガス処理室７が設けられる。炉室５にはＣＶＤ炉３が設置されておりＣＶＤ炉３には原料供給部９、反応室１１及びポンプ１３が設置される。排ガス処理室７には排ガス処理装置１が設置される。また、半導体製造装置Ａにはキャリアガス供給部８及びポンプ１５が更に設置される。キャリアガス供給部８と原料供給部９とは配管Ｂ１を介して接続される。原料供給部９と反応室１１とは配管Ｂ２を介して接続される。反応室１１とポンプ１３とは配管Ｂ３介して接続される。ポンプ１３と排ガス処理装置１とは配管Ｂ５を介して接続される。炉室５は配管Ｂ７及び配管Ｂ１５を介してポンプ１５に接続される。ＣＶＤ炉３は配管Ｂ９及び配管Ｂ１５を介してポンプ１５に接続される。排ガス処理装置１は配管Ｂ１１及び配管Ｂ１５を介してポンプ１５に接続される。排ガス処理室７は配管Ｂ１３及び配管Ｂ１５を介してポンプ１５に接続される。   The exhaust gas treatment apparatus 1 according to the present embodiment is installed in a semiconductor manufacturing apparatus A using a CVD furnace 3 as shown in FIG. First, the configuration of the semiconductor manufacturing apparatus A will be described with reference to FIG. The semiconductor manufacturing apparatus A is provided with a furnace chamber 5 and an exhaust gas treatment chamber 7. A CVD furnace 3 is installed in the furnace chamber 5, and a raw material supply unit 9, a reaction chamber 11 and a pump 13 are installed in the CVD furnace 3. An exhaust gas treatment device 1 is installed in the exhaust gas treatment chamber 7. The semiconductor manufacturing apparatus A is further provided with a carrier gas supply unit 8 and a pump 15. The carrier gas supply unit 8 and the raw material supply unit 9 are connected via a pipe B1. The raw material supply unit 9 and the reaction chamber 11 are connected via a pipe B2. The reaction chamber 11 and the pump 13 are connected via a pipe B3. The pump 13 and the exhaust gas treatment device 1 are connected via a pipe B5. The furnace chamber 5 is connected to the pump 15 via a pipe B7 and a pipe B15. The CVD furnace 3 is connected to the pump 15 via a pipe B9 and a pipe B15. The exhaust gas treatment apparatus 1 is connected to the pump 15 via a pipe B11 and a pipe B15. The exhaust gas treatment chamber 7 is connected to the pump 15 via a pipe B13 and a pipe B15.

次に、排ガス処理装置１、キャリアガス供給部８、原料供給部９、反応室１１、ポンプ１３及びポンプ１５の各々が有する機能について説明する。キャリアガス供給部８は、Ｎ２やＨ２等を含むキャリアガスＧ１を配管Ｂ１に流出する。原料供給部９は、反応室１１に供給する原料ガスＧ３を生成し、この原料ガスＧ３を配管Ｂ２に流出する。原料ガスＧ３は、ＣＶＤ法に基づく薄膜形成を行うための原料がキャリアガスＧ１に付着したガスである。反応室１１は、ＣＶＤ法に基づく薄膜形成に係る半導体製造プロセスを、原料ガスＧ３を用いて行う。ポンプ１３は、キャリアガス供給部８から流出するキャリアガスＧ１を、配管Ｂ１を介して原料供給部９に流す。ポンプ１３は、原料供給部９により生成された原料ガスＧ３を、配管Ｂ２を介して反応室１１に流す。ポンプ１３は、反応室１１において行われる半導体製造プロセスにより生成される排ガスＧ５を、配管Ｂ３に排気する。そして、ポンプ１３は、反応室１１から排気された排ガスＧ５を集め、配管Ｂ５を介して、排ガスＧ７として排ガス処理装置１に流す。排ガス処理装置１は、配管Ｂ５を介して流入する排ガスＧ７を処理する。ポンプ１５は、炉室５から排気される排ガスＧ９を、配管Ｂ７及び配管Ｂ１５を介して外部に排気する。ポンプ１５は、ＣＶＤ炉３から排気される排ガスＧ１１を、配管Ｂ９及び配管Ｂ１５を介して外部に排気する。ポンプ１５は、排ガス処理装置１から排気される排ガスＧ１３を、配管Ｂ１１及び配管Ｂ１５を介して外部に排気する。ポンプ１５は、排ガス処理室７から排気される排ガスＧ１５を、配管Ｂ１３及び配管Ｂ１５を介して外部に排気する。 Next, functions of each of the exhaust gas treatment device 1, the carrier gas supply unit 8, the raw material supply unit 9, the reaction chamber 11, the pump 13, and the pump 15 will be described. The carrier gas supply unit 8 flows out the carrier gas G1 containing N 2 , H 2 or the like into the pipe B1. The raw material supply unit 9 generates a raw material gas G3 to be supplied to the reaction chamber 11, and flows this raw material gas G3 into the pipe B2. The raw material gas G3 is a gas in which a raw material for forming a thin film based on the CVD method adheres to the carrier gas G1. In the reaction chamber 11, a semiconductor manufacturing process related to thin film formation based on the CVD method is performed using the source gas G3. The pump 13 causes the carrier gas G1 flowing out from the carrier gas supply unit 8 to flow to the raw material supply unit 9 via the pipe B1. The pump 13 causes the source gas G3 generated by the source supply unit 9 to flow into the reaction chamber 11 via the pipe B2. The pump 13 exhausts the exhaust gas G5 generated by the semiconductor manufacturing process performed in the reaction chamber 11 to the pipe B3. Then, the pump 13 collects the exhaust gas G5 exhausted from the reaction chamber 11 and flows the exhaust gas G5 to the exhaust gas treatment device 1 as the exhaust gas G7 through the pipe B5. The exhaust gas treatment device 1 treats the exhaust gas G7 that flows in through the pipe B5. The pump 15 exhausts the exhaust gas G9 exhausted from the furnace chamber 5 to the outside through the pipe B7 and the pipe B15. The pump 15 exhausts the exhaust gas G11 exhausted from the CVD furnace 3 to the outside through the pipe B9 and the pipe B15. The pump 15 exhausts the exhaust gas G13 exhausted from the exhaust gas treatment device 1 to the outside through the pipe B11 and the pipe B15. The pump 15 exhausts the exhaust gas G15 exhausted from the exhaust gas treatment chamber 7 to the outside through the pipe B13 and the pipe B15.

次に、図２を参照して、本実施形態に係る排ガス処理装置１の構成について説明する。排ガス処理装置１は、入力１７、開閉弁Ｖ１（第１の開閉弁）、出力１９、薬剤筒２１及び検出装置２３を有する。入力１７には配管Ｂ５が接続され、配管Ｂ５を流れる排ガスＧ７を受ける。入力１７と薬剤筒２１との間には排気ラインＬ１が設けられている。入力１７は、排気ラインＬ１を構成する第１の配管Ｂ１７の端部Ｃ１ａに接続される。第１の配管Ｂ１７のもう一方の端部Ｃ１ｂには開閉弁Ｖ１の開口Ｖ１ａが接続される。開閉弁Ｖ１のもう一方の開口Ｖ１ｂには、排気ラインＬ１を構成する第２の配管Ｂ１９の端部Ｃ３ａが接続される。開閉弁Ｖ１は、第１の配管Ｂ１７と第２の配管Ｂ１９との間を流れるガスの流路を開閉する。第２の配管Ｂ１９のもう一方の端部Ｃ３ｂには薬剤筒２１が接続される。   Next, the configuration of the exhaust gas treatment apparatus 1 according to the present embodiment will be described with reference to FIG. The exhaust gas treatment apparatus 1 has an input 17, an on-off valve V 1 (first on-off valve), an output 19, a medicine cylinder 21, and a detection device 23. A pipe B5 is connected to the input 17 and receives the exhaust gas G7 flowing through the pipe B5. An exhaust line L1 is provided between the input 17 and the medicine cylinder 21. The input 17 is connected to the end C1a of the first pipe B17 that constitutes the exhaust line L1. The opening V1a of the on-off valve V1 is connected to the other end C1b of the first pipe B17. The other opening V1b of the on-off valve V1 is connected to the end C3a of the second pipe B19 that constitutes the exhaust line L1. The on-off valve V1 opens and closes the flow path of the gas flowing between the first pipe B17 and the second pipe B19. The medicine cylinder 21 is connected to the other end C3b of the second pipe B19.

薬剤筒２１は、開閉弁２１ａ、筒体２１ｂ及び開閉弁２１ｃを有する。開閉弁２１ａは、第２の配管Ｂ１９の端部Ｃ３ｂと着脱可能に接続されており、第２の配管Ｂ１９からのガスの流入口２１ｄを有する。開閉弁２１ａは、流入口２１ｄと筒体２１ｂとの間のガスの流路を開閉する。筒体２１ｂは、開閉弁２１ａを介して流入する排ガスＧ７（ＣＶＤ法に基づく薄膜製造に係る半導体製造プロセスにおいて生じる排ガス）を処理するための薬剤を収容する。開閉弁２１ｃは、第３の配管Ｂ２０の端部Ｃ５と着脱可能に接続されており、筒体２１ｂにより処理された排ガスＧ１７を第３の配管Ｂ２０に流出する流出口２１ｅを有する。開閉弁２１ｃは、筒体２１ｂと流出口２１ｅとの間のガスの流路を開閉する。   The medicine cylinder 21 includes an on-off valve 21a, a cylinder body 21b, and an on-off valve 21c. The on-off valve 21a is detachably connected to the end C3b of the second pipe B19, and has a gas inlet 21d from the second pipe B19. The on-off valve 21a opens and closes the gas flow path between the inlet 21d and the cylinder 21b. The cylinder 21b contains a chemical for treating the exhaust gas G7 (exhaust gas generated in the semiconductor manufacturing process related to the thin film manufacturing based on the CVD method) flowing in through the on-off valve 21a. The on-off valve 21c is detachably connected to the end C5 of the third pipe B20, and has an outlet 21e through which the exhaust gas G17 treated by the cylindrical body 21b flows out to the third pipe B20. The on-off valve 21c opens and closes the gas flow path between the cylindrical body 21b and the outlet 21e.

出力１９は、配管Ｂ１１に接続される。そして、出力１９は、第３の配管Ｂ２０の端部Ｃ７に接続されており、第３の配管Ｂ２０を流れる排ガスＧ１３を配管Ｂ１１に排気する。検出装置２３は、配管により構成された分岐ラインＬ５（第２の分岐ライン）に接続されており、分岐ラインＬ５内にあるガス（後述する排ガスＧ２３）に含まれる酸素濃度及び／又は水分濃度を検出する。検出装置２３は、酸素濃度及び／又は水分濃度の検出結果を電気信号（検出信号という）に変換し、この電気信号を後述の制御装置２５に送信する送信装置（図示略）を有する。なお、検出装置２３は、検出結果を表示する表示装置（図示略）を有していてもよい。分岐ラインＬ５の端部Ｃ９は、第１の配管Ｂ１７の接続部Ｄ１に接続されており、分岐ラインＬ５のもう一方の端部Ｃ１１は、後述するバイパスラインＬ３の接続部Ｄ３に接続される。バイパスラインＬ３は、配管によって構成されており第１の配管Ｂ１７と第３の配管Ｂ２０とを接続する。バイパスラインＬ３の端部Ｃ１３は、第１の配管Ｂ１７のうち端部Ｃ１ａと接続部Ｄ１との間にある接続部Ｄ５に接続されており、バイパスラインＬ３のもう一方の端部Ｃ１５は、第３の配管Ｂ２０の接続部Ｄ７に接続される。更に、排ガス処理装置１には、配管により構成された分岐ラインＬ７（第１の分岐ライン）が設けられる。分岐ラインＬ７の端部Ｃ１７は、第２の配管Ｂ１９の接続部Ｄ９に接続されており、分岐ラインＬ７のもう一方の端部Ｃ１９は、分岐ラインＬ５のうち端部Ｃ９と検出装置２３との間にある接続部Ｄ１１に接続される。   The output 19 is connected to the pipe B11. The output 19 is connected to the end C7 of the third pipe B20, and exhaust gas G13 flowing through the third pipe B20 is exhausted to the pipe B11. The detection device 23 is connected to a branch line L5 (second branch line) configured by piping, and detects oxygen concentration and / or moisture concentration contained in gas (exhaust gas G23 described later) in the branch line L5. To detect. The detection device 23 includes a transmission device (not shown) that converts the detection result of the oxygen concentration and / or the moisture concentration into an electrical signal (referred to as a detection signal) and transmits the electrical signal to the control device 25 described later. The detection device 23 may include a display device (not shown) that displays the detection result. An end C9 of the branch line L5 is connected to the connection part D1 of the first pipe B17, and the other end C11 of the branch line L5 is connected to a connection part D3 of the bypass line L3 described later. The bypass line L3 is constituted by a pipe and connects the first pipe B17 and the third pipe B20. The end C13 of the bypass line L3 is connected to the connection part D5 between the end C1a and the connection part D1 in the first pipe B17, and the other end C15 of the bypass line L3 is 3 is connected to the connection part D7 of the pipe B20. Further, the exhaust gas treatment apparatus 1 is provided with a branch line L7 (first branch line) constituted by piping. The end C17 of the branch line L7 is connected to the connection part D9 of the second pipe B19, and the other end C19 of the branch line L7 is connected to the end C9 and the detection device 23 in the branch line L5. It is connected to the connecting part D11 between them.

バイパスラインＬ３には、端部Ｃ１３と接続部Ｄ３との間に開閉弁Ｖ３が設けられる。開閉弁Ｖ３は、端部Ｃ１３からバイパスラインＬ３に流入するガスの流路を開閉する。分岐ラインＬ５には、端部Ｃ９と接続部Ｄ１１との間に開閉弁Ｖ５（第２の開閉弁）が設けられる。開閉弁Ｖ５は、端部Ｃ９から分岐ラインＬ５に流入するガスの流路を開閉する。分岐ラインＬ７には、開閉弁Ｖ７（第３の開閉弁）が設けられる。開閉弁Ｖ７は、端部Ｃ１７から分岐ラインＬ７に流入するガスの流路を開閉する。   In the bypass line L3, an on-off valve V3 is provided between the end C13 and the connection part D3. The on-off valve V3 opens and closes the flow path of the gas that flows into the bypass line L3 from the end C13. On the branch line L5, an on-off valve V5 (second on-off valve) is provided between the end C9 and the connection part D11. The on-off valve V5 opens and closes the flow path of the gas flowing from the end C9 into the branch line L5. The branch line L7 is provided with an on-off valve V7 (third on-off valve). The on-off valve V7 opens and closes the flow path of the gas flowing from the end C17 into the branch line L7.

排ガス処理装置１は、駆動装置Ｅ１、駆動装置Ｅ３、駆動装置Ｅ５及び駆動装置Ｅ７と、制御装置２５とを更に有する。駆動装置Ｅ１は開閉弁Ｖ１を開閉駆動し、駆動装置Ｅ３は開閉弁Ｖ３を開閉駆動し、駆動装置Ｅ５は開閉弁Ｖ５を開閉駆動し、駆動装置Ｅ７は開閉弁Ｖ７を開閉駆動する。制御装置２５は、検出装置２３から送信される検出信号を有線又は無線により受信すると、この検出信号に応じて、開閉弁Ｖ１、開閉弁Ｖ３、開閉弁Ｖ５及び開閉弁Ｖ７に対する各開閉指示を、駆動装置Ｅ１、駆動装置Ｅ３、駆動装置Ｅ５及び駆動装置Ｅ７の各々に有線又は無線により送信する。駆動装置Ｅ１、駆動装置Ｅ３、駆動装置Ｅ５及び駆動装置Ｅ７の各々は、制御装置２５から送信された各開閉指示に応じて、開閉弁Ｖ３、開閉弁Ｖ５及び開閉弁Ｖ７を開閉駆動する。   The exhaust gas treatment apparatus 1 further includes a drive device E1, a drive device E3, a drive device E5, a drive device E7, and a control device 25. The driving device E1 drives the opening / closing valve V1 to open / close, the driving device E3 drives the opening / closing valve V3 to open / close, the driving device E5 drives the opening / closing valve V5 to open / close, and the driving device E7 drives the opening / closing valve V7 to open / close. When the control device 25 receives the detection signal transmitted from the detection device 23 by wire or wirelessly, in response to the detection signal, the control device 25 gives each on / off instruction to the on-off valve V1, the on-off valve V3, the on-off valve V5, and the on-off valve V7. It transmits to each of drive device E1, drive device E3, drive device E5, and drive device E7 by wire or wireless. Each of the driving device E1, the driving device E3, the driving device E5, and the driving device E7 opens and closes the opening / closing valve V3, the opening / closing valve V5, and the opening / closing valve V7 in response to each opening / closing instruction transmitted from the control device 25.

次に、図２を参照して、排ガス処理装置１内のガスの流れについて説明する。まず、開閉弁Ｖ１が開かれている場合には、排ガスＧ７は、入力１７を介して配管Ｂ５から排気ラインＬ１に流入した後に開閉弁Ｖ１を介して薬剤筒２１に流入する。開閉弁Ｖ７が開かれている場合には、排ガスＧ７から分流した排ガスＧ１９が分岐ラインＬ７に流入する。開閉弁Ｖ５が開かれている場合には、排ガスＧ７から分流した排ガスＧ２１が分岐ラインＬ５に流入する。分岐ラインＬ５には、排ガスＧ２１と、接続部Ｄ１１を介して分岐ラインＬ７から流入する排ガスＧ１９とが混合された排ガスＧ２３が流れる。この排ガスＧ２３は、バイパスラインＬ３に流入する。なお、開閉弁Ｖ７が閉じられていれば、排ガスＧ１９は分岐ラインＬ５には流入しない。開閉弁Ｖ３が開かれている場合には、排ガスＧ７から分流した排ガスＧ２５がバイパスラインＬ３に流入する。バイパスラインＬ３には、排ガスＧ２５と、接続部Ｄ３を介して分岐ラインＬ５から流入する排ガスＧ２３とが混合された排ガスＧ２７が流れる。なお、排ガスＧ２３は、開閉弁Ｖ５及び開閉弁Ｖ７のうち何れかが開かれていればバイパスラインＬ３に流入するが、開閉弁Ｖ５及び開閉弁Ｖ７が共に閉じられていればバイパスラインＬ３には流入しない。   Next, the flow of gas in the exhaust gas treatment apparatus 1 will be described with reference to FIG. First, when the on-off valve V1 is open, the exhaust gas G7 flows from the pipe B5 into the exhaust line L1 via the input 17, and then flows into the medicine cylinder 21 via the on-off valve V1. When the on-off valve V7 is opened, the exhaust gas G19 branched from the exhaust gas G7 flows into the branch line L7. When the on-off valve V5 is opened, the exhaust gas G21 diverted from the exhaust gas G7 flows into the branch line L5. In the branch line L5, the exhaust gas G23 in which the exhaust gas G21 and the exhaust gas G19 flowing in from the branch line L7 through the connection portion D11 are mixed flows. The exhaust gas G23 flows into the bypass line L3. If the on-off valve V7 is closed, the exhaust gas G19 does not flow into the branch line L5. When the on-off valve V3 is opened, the exhaust gas G25 diverted from the exhaust gas G7 flows into the bypass line L3. In the bypass line L3, the exhaust gas G27 in which the exhaust gas G25 and the exhaust gas G23 flowing in from the branch line L5 through the connection portion D3 are mixed flows. The exhaust gas G23 flows into the bypass line L3 if either the on-off valve V5 or the on-off valve V7 is open, but if the on-off valve V5 and the on-off valve V7 are both closed, Does not flow.

また、第３の配管Ｂ２０には、薬剤筒２１から端部Ｃ５を介して排ガスＧ１７が流入する。第３の配管Ｂ２０には、バイパスラインＬ３から接続部Ｄ７を介して排ガスＧ２７が流入する。そして、第３の配管Ｂ２０には、排ガスＧ１７と、排ガスＧ２７とが混合された排ガスＧ１３が流れる。この排ガスＧ１３は、出力１９を介して第３の配管Ｂ２０から配管Ｂ１１に排気される。なお、排ガスＧ２７は、開閉弁Ｖ３、開閉弁Ｖ５及び開閉弁Ｖ７のうち何れかが開かれていれば第３の配管Ｂ２０に流入するが、開閉弁Ｖ３、開閉弁Ｖ５及び開閉弁Ｖ７の全てが閉じられていれば第３の配管Ｂ２０には流入しない。   Further, the exhaust gas G17 flows into the third pipe B20 from the drug cylinder 21 via the end C5. The exhaust gas G27 flows into the third pipe B20 from the bypass line L3 through the connection portion D7. Then, the exhaust gas G13 in which the exhaust gas G17 and the exhaust gas G27 are mixed flows through the third pipe B20. The exhaust gas G13 is exhausted from the third pipe B20 to the pipe B11 via the output 19. The exhaust gas G27 flows into the third pipe B20 if any of the on-off valve V3, on-off valve V5, and on-off valve V7 is open, but all of the on-off valve V3, on-off valve V5, and on-off valve V7. Does not flow into the third pipe B20.

次に、排ガス処理装置１が有する開閉弁Ｖ１〜開閉弁Ｖ７の開閉方法について説明する。まず、図３を参照して、薬剤筒２１の交換作業又はＣＶＤ炉３のメンテナンス作業における各開閉弁の開閉方法について説明する。薬剤筒２１の交換作業又はＣＶＤ炉３のメンテナンス作業の開始前には、ＣＶＤ炉３の使用が停止される。ＣＶＤ炉３の使用が停止されると、制御装置２５は、下記ステップＳ１の処理を行う。   Next, a method for opening and closing the on-off valve V1 to the on-off valve V7 of the exhaust gas treatment apparatus 1 will be described. First, with reference to FIG. 3, the opening / closing method of each on-off valve in the replacement | exchange operation | work of the chemical | medical agent cylinder 21 or the maintenance operation | work of CVD furnace 3 is demonstrated. The use of the CVD furnace 3 is stopped before the replacement work of the chemical cylinder 21 or the maintenance work of the CVD furnace 3 is started. When the use of the CVD furnace 3 is stopped, the control device 25 performs the following step S1.

（ステップＳ１）すなわち、制御装置２５は、駆動装置Ｅ１を制御することによって開閉弁Ｖ１を閉じる。ＣＶＤ炉３の使用停止前には、開閉弁Ｖ３、開閉弁Ｖ５及び開閉弁Ｖ７は閉じられていたが、ステップＳ１の処理によって、開閉弁Ｖ１、開閉弁Ｖ３，開閉弁Ｖ５及び開閉弁Ｖ７の全てが閉じられる。（ステップＳ２）次に、薬剤筒２１の交換作業又はＣＶＤ炉３のメンテナンス作業が行われる。この作業が終了すると、制御装置２５は、下記ステップＳ３の処理を行う。   (Step S1) That is, the control device 25 closes the on-off valve V1 by controlling the drive device E1. Before the use of the CVD furnace 3 was stopped, the on-off valve V3, on-off valve V5, and on-off valve V7 were closed, but by the processing of step S1, the on-off valve V1, on-off valve V3, on-off valve V5, and on-off valve V7 Everything is closed. (Step S2) Next, a replacement operation of the drug cylinder 21 or a maintenance operation of the CVD furnace 3 is performed. When this operation is completed, the control device 25 performs the process of step S3 below.

（ステップＳ３）すなわち、制御装置２５は、駆動装置Ｅ３及び駆動装置Ｅ５を制御することによって開閉弁Ｖ３及び開閉弁Ｖ５を開く。この際、検出装置２３は、排ガスＧ２３に含まれる酸素濃度及び／又は水分濃度を検出する。この検出結果は制御装置２５に送信される。ステップＳ３の場合、排ガスＧ２５はバイパスラインＬ３を流通し、排ガスＧ２１は分岐ラインＬ５を流通する。しかし、開閉弁Ｖ７が閉じられているため、排ガスＧ１９は分岐ラインＬ７を流通しない。よって、排ガスＧ２３は、排ガスＧ２１と同一となる。そして、この排ガスＧ２１は、第１の配管Ｂ１７内にある排ガスＧ７と同じガス成分を含む。従って、ステップＳ３では、検出装置２３は、第１の配管Ｂ１７内にある排ガスＧ７に含まれる酸素濃度及び／又は水分濃度を検出する。制御装置２５は、この検出された酸素濃度及び／又は水分濃度が所定レベルを超えているか否かを判定する。そして、この判定の結果、第１の配管Ｂ１７内の酸素濃度及び／又は水分濃度が所定レベルを超えていない場合には、制御装置２５は、下記ステップＳ４の処理を行う。なお、第１の配管Ｂ１７内の酸素濃度及び／又は水分濃度が所定レベルを超えている場合には、ポンプ１５を用いて第１の配管Ｂ１７内の換気（酸素及び水分の除去）が行われる。   (Step S3) That is, the control device 25 opens the on-off valve V3 and the on-off valve V5 by controlling the driving device E3 and the driving device E5. At this time, the detection device 23 detects the oxygen concentration and / or the moisture concentration contained in the exhaust gas G23. This detection result is transmitted to the control device 25. In step S3, the exhaust gas G25 flows through the bypass line L3, and the exhaust gas G21 flows through the branch line L5. However, since the on-off valve V7 is closed, the exhaust gas G19 does not flow through the branch line L7. Therefore, the exhaust gas G23 is the same as the exhaust gas G21. And this exhaust gas G21 contains the same gas component as the exhaust gas G7 in 1st piping B17. Accordingly, in step S3, the detection device 23 detects the oxygen concentration and / or the moisture concentration contained in the exhaust gas G7 in the first pipe B17. The control device 25 determines whether or not the detected oxygen concentration and / or moisture concentration exceeds a predetermined level. As a result of this determination, when the oxygen concentration and / or the moisture concentration in the first pipe B17 does not exceed the predetermined level, the control device 25 performs the process of step S4 below. When the oxygen concentration and / or the moisture concentration in the first pipe B17 exceeds a predetermined level, ventilation (removal of oxygen and moisture) in the first pipe B17 is performed using the pump 15. .

（ステップＳ４）次に、制御装置２５は、駆動装置Ｅ５及び駆動装置Ｅ７を制御することによって、開閉弁Ｖ５を閉じた後に開閉弁Ｖ７を開く。この際、検出装置２３は、排ガスＧ２３に含まれる酸素濃度及び／又は水分濃度を検出する。この検出結果は制御装置２５に送信される。ステップＳ４の場合、排ガスＧ２５はバイパスラインＬ３を流れ、排ガスＧ１９は分岐ラインＬ７を流通する。しかし、開閉弁Ｖ５が閉じられたため、排ガスＧ２１は分岐ラインＬ５を流通しない。よって、排ガスＧ２３は排ガスＧ１９と同一となる。そして、この排ガスＧ１９は、第２の配管Ｂ１９内にあるガスである。従って、ステップＳ４では、検出装置２３は、第２の配管Ｂ１９内にあるガスに含まれる酸素濃度及び／又は水分濃度を検出する。制御装置２５は、この検出された酸素濃度及び／又は水分濃度が所定レベルを超えているか否かを判定する。そして、この判定の結果、第２の配管Ｂ１９内の酸素濃度及び／又は水分濃度が所定レベルを超えていない場合には、制御装置２５は、下記ステップＳ５の処理を行う。なお、第２の配管Ｂ１９内の酸素濃度及び／又は水分濃度が所定レベルを超えている場合には、ポンプ１５を用いて第１の配管Ｂ１７内の換気（酸素及び水分の除去）が行われる。   (Step S4) Next, the control device 25 controls the drive device E5 and the drive device E7 to open the open / close valve V7 after closing the open / close valve V5. At this time, the detection device 23 detects the oxygen concentration and / or the moisture concentration contained in the exhaust gas G23. This detection result is transmitted to the control device 25. In step S4, the exhaust gas G25 flows through the bypass line L3, and the exhaust gas G19 flows through the branch line L7. However, since the on-off valve V5 is closed, the exhaust gas G21 does not flow through the branch line L5. Therefore, the exhaust gas G23 is the same as the exhaust gas G19. And this exhaust gas G19 is gas in the 2nd piping B19. Accordingly, in step S4, the detection device 23 detects the oxygen concentration and / or the moisture concentration contained in the gas in the second pipe B19. The control device 25 determines whether or not the detected oxygen concentration and / or moisture concentration exceeds a predetermined level. As a result of this determination, when the oxygen concentration and / or the moisture concentration in the second pipe B19 does not exceed the predetermined level, the control device 25 performs the process of step S5 below. When the oxygen concentration and / or the moisture concentration in the second pipe B19 exceed a predetermined level, ventilation (removal of oxygen and moisture) in the first pipe B17 is performed using the pump 15. .

（ステップＳ５）制御装置２５は、駆動装置Ｅ３及び駆動装置Ｅ７を制御することによって、ステップＳ４の段階で開かれていた開閉弁Ｖ３及び開閉弁Ｖ７を閉じる。そして、この後、制御装置２５は、駆動装置Ｅ１を制御することによって開閉弁Ｖ１を開く。開閉弁Ｖ１が開かれた後、薬剤筒２１の開閉弁２１ａ及び開閉弁２１ｃが手動等によって開かれると、ＣＶＤ炉３は再び使用可能となる。   (Step S5) The control device 25 controls the driving device E3 and the driving device E7 to close the on-off valve V3 and the on-off valve V7 that were opened in the step S4. Thereafter, the control device 25 opens the on-off valve V1 by controlling the drive device E1. After the on-off valve V1 is opened, when the on-off valve 21a and the on-off valve 21c of the medicine cylinder 21 are manually opened, the CVD furnace 3 can be used again.

次いで、図４を参照して、始業前の点検作業における各開閉弁の開閉方法につい説明する。始業前においてＣＶＤ炉３が稼動される前には、排ガス処理装置１の開閉弁Ｖ１、開閉弁Ｖ３、開閉弁Ｖ５及び開閉弁Ｖ７は全て閉じられている。更に、薬剤筒２１の開閉弁２１ａ及び開閉弁２１ｃも閉じられている。そして、始業前の点検作業が開始されると、制御装置２５は、下記ステップＳ１１の処理を行う。   Next, with reference to FIG. 4, a method for opening and closing each on-off valve in the inspection work before the start of work will be described. Before the CVD furnace 3 is operated before the start of work, the on-off valve V1, the on-off valve V3, the on-off valve V5, and the on-off valve V7 of the exhaust gas treatment apparatus 1 are all closed. Furthermore, the on-off valve 21a and the on-off valve 21c of the medicine cylinder 21 are also closed. And if the inspection work before the start of work is started, the control apparatus 25 will perform the process of following step S11.

（ステップＳ１１）すなわち、制御装置２５は、駆動装置Ｅ３及び駆動装置Ｅ５を制御することによって開閉弁Ｖ３及び開閉弁Ｖ５を開く。この際、検出装置２３は、排ガスＧ２３に含まれる酸素濃度及び／又は水分濃度を検出する。この検出結果は制御装置２５に送信される。ステップＳ１１の場合、上述のステップＳ３の場合と同様に、制御装置２５は、第１の配管Ｂ１７内にある排ガスＧ７に含まれる酸素濃度及び／又は水分濃度が所定レベルを超えているか否かを判定する。そして、第１の配管Ｂ１７内の酸素濃度及び／又は水分濃度が所定レベルを超えていない場合には、制御装置２５は、下記ステップＳ１２の処理を行う。なお、第１の配管Ｂ１７内の酸素濃度及び／又は水分濃度が所定レベルを超えている場合には、ポンプ１５を用いて第１の配管Ｂ１７内の換気（酸素及び水分の除去）が行われる。   (Step S11) That is, the control device 25 opens the on-off valve V3 and the on-off valve V5 by controlling the driving device E3 and the driving device E5. At this time, the detection device 23 detects the oxygen concentration and / or the moisture concentration contained in the exhaust gas G23. This detection result is transmitted to the control device 25. In the case of step S11, as in the case of step S3 described above, the control device 25 determines whether or not the oxygen concentration and / or the moisture concentration contained in the exhaust gas G7 in the first pipe B17 exceeds a predetermined level. judge. When the oxygen concentration and / or the moisture concentration in the first pipe B17 does not exceed the predetermined level, the control device 25 performs the process of step S12 below. When the oxygen concentration and / or the moisture concentration in the first pipe B17 exceeds a predetermined level, ventilation (removal of oxygen and moisture) in the first pipe B17 is performed using the pump 15. .

（ステップＳ１２）次に、制御装置２５は、駆動装置Ｅ５及び駆動装置Ｅ７を制御することによって、開閉弁Ｖ５を閉じた後に開閉弁Ｖ７を開く。この際、検出装置２３は、排ガスＧ２３に含まれる酸素濃度及び／又は水分濃度を検出する。この検出結果は制御装置２５に送信される。ステップＳ１２の場合、上述のステップＳ４の場合と同様に、制御装置２５は、第２の配管Ｂ１９内にあるガスに含まれる酸素濃度及び／又は水分濃度が所定レベルを超えているか否かを判定する。そして、第２の配管Ｂ１９内の酸素濃度及び／又は水分濃度が所定レベルを超えていない場合には、制御装置２５は、下記ステップＳ１３を行う。なお、第２の配管Ｂ１９内の酸素濃度及び／又は水分濃度が所定レベルを超えている場合には、ポンプ１５を用いて第１の配管Ｂ１７内の換気（酸素及び水分の除去）が行われる。   (Step S12) Next, the control device 25 controls the drive device E5 and the drive device E7 to open the open / close valve V7 after closing the open / close valve V5. At this time, the detection device 23 detects the oxygen concentration and / or the moisture concentration contained in the exhaust gas G23. This detection result is transmitted to the control device 25. In step S12, as in step S4 described above, the control device 25 determines whether or not the oxygen concentration and / or moisture concentration contained in the gas in the second pipe B19 exceeds a predetermined level. To do. If the oxygen concentration and / or the moisture concentration in the second pipe B19 does not exceed the predetermined level, the control device 25 performs the following step S13. When the oxygen concentration and / or the moisture concentration in the second pipe B19 exceed a predetermined level, ventilation (removal of oxygen and moisture) in the first pipe B17 is performed using the pump 15. .

（ステップＳ１３）すなわち、制御装置２５は、駆動装置Ｅ３及び駆動装置Ｅ７を制御することによって、ステップＳ１２の段階で開かれていた開閉弁Ｖ３及び開閉弁Ｖ７を閉じる。そして、この後、制御装置２５は、駆動装置Ｅ１を制御することによって開閉弁Ｖ１を開く。開閉弁Ｖ１が開かれた後、薬剤筒２１の開閉弁２１ａ及び開閉弁２１ｃが手動等によって開かれると、ＣＶＤ炉３が稼動可能となり、始業開始できる。なお、上記ステップＳ１〜ステップＳ５、及び、ステップＳ１１〜ステップＳ１３における開閉弁Ｖ１、開閉弁Ｖ３、開閉弁Ｖ５及び開閉弁Ｖ７の開閉は、作業者の手動操作により行ってもよい。   (Step S13) That is, the control device 25 controls the driving device E3 and the driving device E7 to close the on-off valve V3 and the on-off valve V7 that were opened in the step S12. Thereafter, the control device 25 opens the on-off valve V1 by controlling the drive device E1. After the on-off valve V1 is opened, when the on-off valve 21a and the on-off valve 21c of the medicine cylinder 21 are opened manually, the CVD furnace 3 can be operated and start of business can be started. In addition, you may perform opening / closing of the on-off valve V1, the on-off valve V3, the on-off valve V5, and the on-off valve V7 in said step S1-step S5 and step S11-step S13 by an operator's manual operation.

以上説明したように、ＣＶＤ炉３のメンテナンス作業や薬剤筒２１の交換作業等の際、或いは、始業前の点検作業の際には、酸素や水分を含む空気が、第１の配管Ｂ１７内や第２の配管Ｂ１９内に入り込む可能性がある。しかし、本実施形態に係る排ガス処理装置１では、検出装置２３によって、第１の配管Ｂ１７内及び第２の配管Ｂ１９内に存在する酸素濃度及び／又は水分濃度が検出できる。従って、作業後に開閉弁Ｖ１を開いた場合における酸素や水分の薬剤筒内への流入の可能性が、検出装置２３による検出結果に基づいて容易且つ正確に判断できる。このため、酸素や水分が薬剤筒２１内に流入する可能性を低減できる。よって、薬剤筒２１内における未処理のガス成分による化学反応の発生が低減される。更に、開閉弁Ｖ５と開閉弁Ｖ７とを開閉操作することにより、第１の配管Ｂ１７内のみの酸素濃度及び水分濃度の検出、第２の配管Ｂ１９内のみの酸素濃度及び水分濃度の検出、或いは、第１の配管Ｂ１７内及び第２の配管Ｂ１９内の酸素濃度及び水分濃度の検出のうち何れの検出を行うのかが容易に選択できる。更に、検出装置２３によって得られた検出結果に基づいて制御装置２５が駆動装置Ｅ１、駆動装置Ｅ３、駆動装置Ｅ５及び駆動装置Ｅ７の各々に、開閉弁Ｖ１、開閉弁Ｖ３、開閉弁Ｖ５及び開閉弁Ｖ７の開閉をそれぞれ行わせる。このため、各開閉弁の開閉が、検出装置２３による検出結果に基づき制御装置２５によって自動的に行える。   As described above, during the maintenance work of the CVD furnace 3, the replacement of the chemical cylinder 21, or the inspection work before the start of work, air containing oxygen and moisture is contained in the first pipe B <b> 17 or There is a possibility of entering the second pipe B19. However, in the exhaust gas treatment apparatus 1 according to the present embodiment, the oxygen concentration and / or moisture concentration present in the first pipe B17 and the second pipe B19 can be detected by the detection device 23. Therefore, it is possible to easily and accurately determine the possibility of inflow of oxygen or moisture into the drug cylinder when the on-off valve V1 is opened after the operation based on the detection result by the detection device 23. For this reason, possibility that oxygen and a water | moisture content will flow in into the chemical | medical agent cylinder 21 can be reduced. Therefore, generation | occurrence | production of the chemical reaction by the untreated gas component in the chemical | medical agent cylinder 21 is reduced. Further, by opening / closing the on-off valve V5 and the on-off valve V7, detection of oxygen concentration and water concentration only in the first pipe B17, detection of oxygen concentration and water concentration only in the second pipe B19, or In addition, it is possible to easily select which of the oxygen concentration and the moisture concentration in the first pipe B17 and the second pipe B19 is to be detected. Further, based on the detection result obtained by the detection device 23, the control device 25 controls the driving device E1, the driving device E3, the driving device E5, and the driving device E7 to open / close valve V1, open / close valve V3, open / close valve V5, and open / close The valve V7 is opened and closed. Therefore, the control device 25 can automatically open and close each on-off valve based on the detection result by the detection device 23.

以上、好適な実施の形態において本発明の原理を図示し説明してきたが、本発明は、そのような原理から逸脱することなく配置および詳細において変更され得ることは、当業者によって認識される。本発明は、本実施の形態に開示された特定の構成に限定されるものではない。したがって、特許請求の範囲およびその精神の範囲から来る全ての修正および変更に権利を請求する。   While the principles of the invention have been illustrated and described in the preferred embodiments, it will be appreciated by those skilled in the art that the invention can be modified in arrangement and detail without departing from such principles. The present invention is not limited to the specific configuration disclosed in the present embodiment. We therefore claim all modifications and changes that come within the scope and spirit of the following claims.

実施形態に係る半導体製造装置の構成を示す図である。It is a figure showing the composition of the semiconductor manufacturing device concerning an embodiment. 実施形態に係る排ガス処理装置の構成を示す図である。It is a figure which shows the structure of the waste gas processing apparatus which concerns on embodiment. 実施形態に係る排ガス処理装置が有する開閉弁の開閉方法を説明するフローチャートである。It is a flowchart explaining the opening / closing method of the on-off valve which the exhaust gas processing apparatus which concerns on embodiment has. 実施形態に係る排ガス処理装置が有する開閉弁の開閉方法を説明するフローチャートである。It is a flowchart explaining the opening / closing method of the on-off valve which the exhaust gas processing apparatus which concerns on embodiment has.

符号の説明Explanation of symbols

Ｅ１，Ｅ３，Ｅ５，Ｅ７…駆動装置、Ａ…半導体製造装置、Ｂ１，Ｂ２，Ｂ３，Ｂ５，Ｂ７，Ｂ９，Ｂ１１，Ｂ１３，Ｂ１５…配管、Ｂ１７…第１の配管、Ｂ１９…第２の配管、Ｂ２０…第３の配管、Ｃ１ａ，Ｃ１ｂ、Ｃ３ａ，Ｃ３ｂ，Ｃ５，Ｃ７，Ｃ９，Ｃ１１，Ｃ１３，Ｃ１５，Ｃ１７，Ｃ１９…端部、Ｄ１，Ｄ３，Ｄ５，Ｄ７，Ｄ９，Ｄ１１…接続部、Ｌ１…排気ライン、Ｌ３…バイパスライン、Ｌ５，Ｌ７…分岐ライン、Ｖ１，Ｖ３，Ｖ５，Ｖ７…開閉弁、Ｖ１ａ…開口、Ｖ１ｂ…開口、１…排ガス処理装置、１３，１５…ポンプ、１７…入力、１９…出力、２１…薬剤筒、２１ａ，２１ｃ…開閉弁、２１ｂ…筒体、２１ｄ…流入口、２１ｅ…流出口、２３…検出装置、２５…制御装置、３…ＣＶＤ炉、５…炉室、７…排ガス処理室、８…キャリアガス供給部、９…原料供給部、１１…反応室。   E1, E3, E5, E7 ... driving device, A ... semiconductor manufacturing device, B1, B2, B3, B5, B7, B9, B11, B13, B15 ... piping, B17 ... first piping, B19 ... second piping B20 ... third pipe, C1a, C1b, C3a, C3b, C5, C7, C9, C11, C13, C15, C17, C19 ... end, D1, D3, D5, D7, D9, D11 ... connection, L1 ... Exhaust line, L3 ... Bypass line, L5, L7 ... Branch line, V1, V3, V5, V7 ... Open / close valve, V1a ... Open, V1b ... Open, 1 ... Exhaust gas treatment device, 13, 15 ... Pump, 17 ... Input, 19 ... Output, 21 ... Chemical cylinder, 21a, 21c ... Open / close valve, 21b ... Cylinder, 21d ... Inlet, 21e ... Outlet, 23 ... Detector, 25 ... Control device, 3 ... CVD furnace, 5 ... Furnace room, 7 ... Exhaust gas treatment room 8 ... carrier gas supply unit, 9 ... raw material supply unit, 11 ... reaction chamber.

Claims (4)

半導体製造プロセスにおいて生じる排ガスを受ける入力と、
前記入力に接続された端部を有する第１の配管と、
前記第１の配管が有する他の端部に接続された開口を有しており該第１の配管から該開口を介して流れるガスの流路を開閉する第１の開閉弁と、
前記開閉弁が有する他の開口に接続された端部を有する第２の配管と、
前記第２の配管が有する他の端部に接続された流入口と、流出口とを有しており、前記排ガスを処理するための薬剤筒と、
第３の配管を介して前記流出口に接続されており前記薬剤筒によって処理されたガスを排気する出力と、
前記第２の配管から分岐した第１の分岐ラインを介して該第２の配管に接続されており酸素濃度及び水分濃度の少なくとも何れかを検出するための検出装置と
を備える、ことを特徴とする排ガス処理装置。 Input receiving exhaust gas generated in the semiconductor manufacturing process;
A first pipe having an end connected to the input;
A first on-off valve that has an opening connected to the other end of the first pipe and opens and closes a flow path of a gas flowing from the first pipe through the opening;
A second pipe having an end connected to another opening of the on-off valve;
An inflow port connected to the other end of the second pipe, an outflow port, and a medicine cylinder for treating the exhaust gas;
An output connected to the outlet through a third pipe and exhausting the gas treated by the drug cylinder;
A detector for detecting at least one of oxygen concentration and moisture concentration, connected to the second pipe via a first branch line branched from the second pipe. Exhaust gas treatment equipment. 前記検出装置と前記第１の配管とが、該第１の配管から分岐した第２の分岐ラインを介して接続され、
前記第２の分岐ラインに設けられており該第２の分岐ラインにおけるガスの流路を開閉する第２の開閉弁と、前記第１の分岐ラインに設けられており該第１の分岐ラインにおけるガスの流路を開閉する第３の開閉弁とを更に備える、ことを特徴とする請求項１に記載の排ガス処理装置。 The detection device and the first pipe are connected via a second branch line branched from the first pipe,
A second on-off valve provided in the second branch line and opening and closing a gas flow path in the second branch line; and provided in the first branch line and in the first branch line. The exhaust gas treatment apparatus according to claim 1, further comprising a third on-off valve that opens and closes a gas flow path. 半導体製造プロセスにおいて生じる排ガスを受ける入力と、
前記入力に接続された端部を有する第１の配管と、
前記第１の配管が有する他の端部に接続された開口を有しており該第１の配管から該開口を介して流れるガスの流路を開閉する開閉弁と、
前記開閉弁が有する他の開口に接続された端部を有する第２の配管と、
前記第２の配管が有する他の端部に接続された流入口と、流出口とを有しており、前記排ガスを処理するための薬剤筒と、
第３の配管を介して前記流出口に接続されており前記薬剤筒によって処理されたガスを排気する出力と、
前記第１の配管から分岐した分岐ラインを介して該第１の配管に接続されており酸素濃度及び水分濃度の少なくとも何れかを検出するための検出装置と
を備える、ことを特徴とする排ガス処理装置。 Input receiving exhaust gas generated in the semiconductor manufacturing process;
A first pipe having an end connected to the input;
An on-off valve that has an opening connected to the other end of the first pipe and opens and closes the flow path of the gas flowing from the first pipe through the opening;
A second pipe having an end connected to another opening of the on-off valve;
An inflow port connected to the other end of the second pipe, an outflow port, and a medicine cylinder for treating the exhaust gas;
An output connected to the outlet through a third pipe and exhausting the gas treated by the drug cylinder;
An exhaust gas treatment comprising: a detection device connected to the first pipe via a branch line branched from the first pipe for detecting at least one of an oxygen concentration and a moisture concentration. apparatus. 前記開閉弁を駆動する駆動装置と、
前記検出装置によって得られる検出結果に基づいて前記駆動装置に前記第１の弁を駆動させる制御装置と
を更に備える、ことを特徴とする請求項１〜３のうち何れか一項に記載の排ガス処理装置。 A driving device for driving the on-off valve;
The exhaust gas according to any one of claims 1 to 3, further comprising: a control device that causes the drive device to drive the first valve based on a detection result obtained by the detection device. Processing equipment.
JP2005200678A 2005-07-08 2005-07-08 Exhaust gas treatment equipment Expired - Fee Related JP4501799B2 (en)

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