JP2007013729A - Electrode structure of crystal oscillator - Google Patents

Electrode structure of crystal oscillator Download PDF

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JP2007013729A
JP2007013729A JP2005193063A JP2005193063A JP2007013729A JP 2007013729 A JP2007013729 A JP 2007013729A JP 2005193063 A JP2005193063 A JP 2005193063A JP 2005193063 A JP2005193063 A JP 2005193063A JP 2007013729 A JP2007013729 A JP 2007013729A
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crystal
electrode structure
electrode
crystal resonator
sealed
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JP4704822B2 (en
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Kazuaki Minami
和昭 南
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Kyocera Crystal Device Corp
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Abstract

<P>PROBLEM TO BE SOLVED: To provide electrode structure of a crystal oscillator sandwiched and sealed by plate-like members comprised of glass, etc. <P>SOLUTION: In the electrode structure of the crystal oscillator sealed by wafers comprised of members such as glass, respectively from the vertical directions so as to sandwich the wafers in which many crystal oscillators are formed, a drawing electrode is formed in a groove part of an inner side of a frame in which the crystal oscillators are formed and a drawing electrode is formed in a level difference part of the inner side of the frame in which the crystal oscillators are formed. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明はガラスなどから成る板状の部材に挟まれて封止された水晶振動子の電極構造に関する。           The present invention relates to an electrode structure of a crystal resonator sandwiched and sealed between plate-like members made of glass or the like.

従来においては、一般的に水晶振動子は周囲の温度・湿度変化や微細な異物の水晶振動子素板への付着によってその振動が抑制されるおそれを無くすためにパッケージの内部に搭載された後に封止されて使用されているが、搭載する情報端末といった電子機器の急速な小型化や高周波化に対応するために、前述の個々の振動子でパッケージを形成するのに対して、水晶振動子が多数個同時に形成されたウェハーの形態でその上下方向から同様の形状のウェハーといった板状の部材を用いて封止した後に、それぞれ個々の水晶振動子に個割り切断して小型のチップ形状の水晶振動子を製造する技術が提案されている。           Conventionally, after a crystal unit is mounted inside a package in order to eliminate the possibility of vibrations being suppressed by changes in ambient temperature / humidity and adhesion of fine foreign objects to the crystal unit base plate. Although used in a sealed manner, in order to respond to the rapid miniaturization and high frequency of electronic devices such as information terminals to be mounted, a crystal resonator is used instead of forming the package with the individual resonators described above. In the form of a wafer in which a large number of wafers are formed at the same time, after sealing using a plate-like member such as a wafer of the same shape from the top and bottom, each chip is cut into individual crystal units and cut into small chips. A technique for manufacturing a crystal resonator has been proposed.

先述の水晶振動子が多数個同時に形成されたウェハーの形態でその上下方向から板状の部材を用いて封止する方法としては、板状の部材にガラスなどを用いて、陽極接合や直接接合といった接合方法を用いて封止し、水晶振動子が多数個形成されたウェハーを上下方向からこの水晶振動子が形成されたウェハーを挟むように上下から別のウェハーで同時に封止することが生産効率も良く適している。           In the form of a wafer in which a large number of the above-mentioned crystal resonators are formed at the same time, sealing is performed using a plate-like member from the vertical direction using glass or the like for the plate-like member, and anodic bonding or direct bonding. It is possible to seal using a bonding method such as the above, and simultaneously seal a wafer on which a large number of crystal resonators are formed with another wafer from above and below so as to sandwich the wafer on which the crystal resonator is formed. It is well suited for efficiency.

ウェハー上に形成された水晶振動子の周波数調整工程までは、それぞれの電極のひきまわしが個々に水晶振動子ごとに別れている必要があり、周波数調整工程の後に再び蒸着によって引き回し電極と、水晶振動子の励振電極とを導通させる。その後のウェハーレベルでの良好な封止を陽極接合によって得るためには、蒸着する金属薄膜に出来うるだけ段差を生じさせず、かつ出来うる限り小さな範囲で先述の導通を得る必要がある。また直接接合を用いる場合では、接合面が形成される素材面の非常に高い平坦度が要求されるために、この接合面への蒸着による金属薄膜の形成によってもウェハーレベルでの良好な接合が不完全となるおそれがあり、そのためにウェハーを貫通加工した後に、個々の水晶振動子の側面に電極の引き回しを施しているのが実際である。           Until the frequency adjustment process of the crystal unit formed on the wafer, it is necessary to separate each electrode separately for each crystal unit. After the frequency adjustment step, the lead electrode and the crystal are again routed by vapor deposition. Conduction is made between the excitation electrode of the vibrator. In order to obtain good sealing at the subsequent wafer level by anodic bonding, it is necessary to produce the above-mentioned conduction in as small a range as possible without causing as many steps as possible in the deposited metal thin film. In addition, when direct bonding is used, a very high flatness of the material surface on which the bonding surface is formed is required. Therefore, good bonding at the wafer level can also be achieved by forming a metal thin film by vapor deposition on the bonding surface. For this reason, after the wafer is penetrated, the electrodes are actually routed on the side surfaces of the individual crystal resonators.

特開平７−１５４１８３号公報JP 7-154183 A 特開２０００−２８１４５９号公報Japanese Patent Laid-Open No. 2000-281459 特開２００１−１７７３６２号公報JP 2001-177362 A 特開２００１−２３０６５１号公報Japanese Patent Laid-Open No. 2001-230651

なお、出願人は前記した先行技術文献情報で特定される先行技術文献以外には、本発明に関連する先行技術文献を、本件出願時までに発見するに至らなかった。           The applicant has not found any prior art documents related to the present invention other than the prior art documents specified by the prior art document information described above by the time of filing of the present application.

しかしながら、周波数調整工程の後、陽極接合を用いたウェハーレベルでの封止では、再蒸着した部分で蒸着膜厚分の僅かな段差を生じるために、陽極接合によるウェハーレベルでの密着が弱く封止が不完全となるおそれがあると言った問題があった。           However, in the wafer level sealing using anodic bonding after the frequency adjustment process, a slight level difference corresponding to the deposited film thickness is generated in the redeposited portion, so that the adhesion at the wafer level by anodic bonding is weak and sealed. There was a problem that said there was a risk that the stop would be incomplete.

また、周波数調整工程の後の直接接合を用いたウェハーレベルでの封止では、電極の引き回しのために水晶振動子の側面に引き回し込み電極を施すが、その場合、水晶振動子の枠体の厚み寸法に大きく依存し、また水晶振動子の側面に蒸着膜厚分の凹凸を形成するために、安定した金属膜を蒸着により水晶振動子の側面に形成することが困難となるおそれがあるといった問題があった。           In addition, in wafer level sealing using direct bonding after the frequency adjustment step, a lead-in electrode is applied to the side surface of the crystal unit for routing the electrode. It depends greatly on the thickness dimension, and it is difficult to form a stable metal film on the side surface of the crystal unit by vapor deposition because it forms unevenness on the side surface of the crystal unit. There was a problem.

本発明は、以上のような技術的背景のもとでなされたものであり、従がってその目的は、ガラスなどから成る板状の部材に挟まれて封止された水晶振動子の電極構造を提供することである。           The present invention has been made under the technical background as described above. Accordingly, the object of the present invention is to provide an electrode of a quartz crystal resonator sandwiched between plate members made of glass or the like and sealed. Is to provide a structure.

上記の目的を達成するために本発明は、水晶振動子が多数個形成されたウェハーを挟むように上下方向からそれぞれガラスなどの部材から成るウェハーで封止される水晶振動子の電極構造において、水晶振動子が形成された枠体の内側面溝部に引き回し電極が形成されたことを特徴とする。           In order to achieve the above object, the present invention provides an electrode structure of a crystal resonator that is sealed with a wafer made of a member such as glass from above and below so as to sandwich a wafer on which a large number of crystal resonators are formed. The lead electrode is formed in the inner surface groove portion of the frame body on which the crystal resonator is formed.

また、水晶振動子が形成された枠体の内側面段差部に引き回し電極が形成されたことを特徴とする。           In addition, a lead-out electrode is formed on a step portion on the inner surface of the frame body on which the crystal resonator is formed.

本発明の水晶振動子の電極構造により、陽極接合が用いられる封止がされる場合、封止される接合面に段差が無くなり、安定した信頼性の高い封止がなされる水晶振動子を得ることが出来る。           According to the electrode structure of the crystal resonator of the present invention, when sealing using anodic bonding is performed, there is no step on the sealed bonding surface, and a crystal resonator capable of stable and highly reliable sealing is obtained. I can do it.

また、本発明の水晶振動子の電極構造により、直接接合が用いられる封止がされる場合、封止される接合面の段差や回し込み電極の金属膜を安定して形成することが出来、信頼性の高い封止がなされる水晶振動子を得ることが出来る。           In addition, when sealing using direct bonding is performed by the electrode structure of the crystal resonator of the present invention, the step of the bonding surface to be sealed and the metal film of the lead-in electrode can be stably formed, It is possible to obtain a crystal resonator that is sealed with high reliability.

以下に図面を参照しながら本発明の実施の一形態について説明する。なお、各図においての同一の符号は同じ対象を示すものとする。           Hereinafter, an embodiment of the present invention will be described with reference to the drawings. In addition, the same code | symbol in each figure shall show the same object.

図１は本発明の電極構造を有する水晶振動子１を上面方向からみた概略の上面斜視図である。即ち、水晶振動子１が多数個形成されたウェハーを挟むように上下方向からそれぞれガラスなどの部材から成るウェハーで封止される水晶振動子１の電極構造において、水晶振動子１が形成された枠体４の内側面溝部５に引き回し電極が形成されている。この本発明の水晶振動子１の電極構造により、陽極接合が用いられる封止がされる場合、封止される接合面に段差が無くなり、安定した信頼性の高い封止がされる水晶振動子１を得ることが出来る。溝部は枠体４の内側面に沿って形成されており、その位置は内側面の範囲内であれば中央でなく、片側に寄っていても構わず、この場合においても本発明の技術的範囲に含まれることは言うまでもない。水晶振動子１が形成された枠体４の内側面溝部５に引き回し電極が形成されていることにより、周波数調整時に溝部に掛けるようにプローブがあてやすく成り、また引き回しの経路を枠体４の内側面にとることにより、機械的には微細な水晶振動子１の出力の近傍での周波数測定を行わずに水晶振動子１の振動に悪影響を与えることなく周波数測定を行うことが出来るという効果を奏するものである。           FIG. 1 is a schematic top perspective view of a crystal resonator 1 having an electrode structure according to the present invention as seen from the top surface direction. That is, the crystal unit 1 is formed in the electrode structure of the crystal unit 1 sealed with a wafer made of a member such as glass from above and below so as to sandwich a wafer on which a large number of crystal units 1 are formed. A lead electrode is formed in the inner surface groove portion 5 of the frame body 4. With the electrode structure of the crystal resonator 1 according to the present invention, when sealing using anodic bonding is performed, there is no step on the sealing surface to be sealed, and the crystal resonator is stably sealed with high reliability. 1 can be obtained. The groove portion is formed along the inner side surface of the frame body 4, and may be located on one side instead of the center as long as the position is within the range of the inner side surface. In this case also, the technical scope of the present invention Needless to say, it is included in Since the routing electrode is formed in the inner surface groove portion 5 of the frame body 4 on which the crystal resonator 1 is formed, the probe can be easily applied to the groove portion when adjusting the frequency, and the routing path of the frame body 4 By adopting the inner surface, the frequency measurement can be performed without adversely affecting the vibration of the crystal unit 1 without mechanically measuring the frequency in the vicinity of the output of the fine crystal unit 1. It plays.

図２は本発明の電極構造をもつ水晶振動子１を上面方向からみた別の概略の上面斜視図である。即ち、水晶振動子１が形成された枠体４の内側面段差部７に引き回し電極が形成されたことを特徴とするものであり、段差はこの図ではひとつであるが、それ以上の複数の段差を有していても構わずこの場合も本発明の技術的範囲に含まれることは言うまでもない。本発明の水晶振動子１の電極構造により、直接接合が用いられる封止がされる場合、封止される接合面の段差や回し込み電極の金属膜を安定して形成することが出来、信頼性の高い封止がなされる水晶振動子１を得ることが出来る効果を奏する。           FIG. 2 is another schematic top perspective view of the crystal resonator 1 having the electrode structure of the present invention as seen from the top surface direction. In other words, the lead electrode is formed on the inner side surface step portion 7 of the frame body 4 on which the crystal unit 1 is formed. Needless to say, a step may be included, and this case is also included in the technical scope of the present invention. When sealing using direct bonding is performed by the electrode structure of the crystal resonator 1 of the present invention, the step of the bonding surface to be sealed and the metal film of the lead-in electrode can be stably formed, It is possible to obtain a crystal resonator 1 that is highly sealed.

図３は、図１の本発明の電極構造をもつ水晶振動子１を、周波数調整前の状態と、周波数調整後で封止の前での状態を示す上面方向からみた概略の上面斜視図である。           FIG. 3 is a schematic top perspective view of the crystal unit 1 having the electrode structure of the present invention shown in FIG. 1 as viewed from above, showing a state before frequency adjustment and a state after frequency adjustment and before sealing. is there.

図４は本発明の電極構造をもつ水晶振動子１の枠体４に溝部をもつ場合（断面図２）と、段差を持つ場合（断面図１）のそれぞれ側面方向からみた概略の断面図である。なお、枠体と接続した部分は、枠体４の内側に位置する水晶振動子１の出力信号が通る水晶振動子１と枠体４との結合部である。           FIGS. 4A and 4B are schematic cross-sectional views as viewed from the side when the groove 4 is provided in the frame 4 of the crystal resonator 1 having the electrode structure of the present invention (cross-sectional view 2) and when there is a step (cross-sectional view 1). is there. The portion connected to the frame body is a coupling portion between the crystal body 1 and the frame body 4 through which an output signal of the crystal body 1 located inside the frame body 4 passes.

図５は従来の電極構造をもつ水晶振動子１を、周波数調整前の状態と、周波数調整後で封止の前での状態を示す上面方向からみた概略の上面斜視図である。従来においては周波数調整工程の後、陽極接合を用いたウェハーレベルでの封止では、再蒸着した部分で蒸着膜厚分の僅かな段差を生じるために、陽極接合によるウェハーレベルでの密着が弱く封止が不完全となるおそれがあると言った問題があった。           FIG. 5 is a schematic top perspective view of the quartz crystal resonator 1 having a conventional electrode structure as seen from above, showing a state before frequency adjustment and a state after frequency adjustment and before sealing. Conventionally, after sealing the wafer at the wafer level using anodic bonding after the frequency adjustment process, a slight step corresponding to the deposited film thickness occurs at the redeposited portion, so that the adhesion at the wafer level by anodic bonding is weak. There was a problem that sealing might be incomplete.

本発明の電極構造を有する水晶振動子を上面方向からみた概略の上面斜視図である。1 is a schematic top perspective view of a crystal resonator having an electrode structure according to the present invention as viewed from above. 本発明の電極構造をもつ水晶振動子を上面方向からみた別の概略の上面斜視図である。FIG. 6 is another schematic top perspective view of a crystal resonator having an electrode structure according to the present invention as viewed from above. 図１の本発明の電極構造をもつ水晶振動子を、周波数調整前の状態と、周波数調整後で封止の前での状態を示す上面方向からみた概略の上面斜視図である。FIG. 2 is a schematic top perspective view of the crystal resonator having the electrode structure of the present invention shown in FIG. 1 as viewed from above, showing a state before frequency adjustment and a state after frequency adjustment and before sealing. 本発明の電極構造をもつ水晶振動子の枠体に溝部をもつ場合と、段差を持つ場合のそれぞれ側面方向からみた概略の断面図である。FIG. 3 is a schematic cross-sectional view seen from the side direction when the groove of the crystal unit having the electrode structure of the present invention has a groove and when the frame has a step. 従来の電極構造をもつ水晶振動子を、周波数調整前の状態と、周波数調整後で封止の前での状態を示す上面方向からみた概略の上面斜視図である。It is the outline top perspective view which looked at the crystal oscillator which has the conventional electrode structure from the upper surface direction which shows the state before frequency adjustment, and the state after frequency adjustment and before sealing.

符号の説明Explanation of symbols

１ 水晶振動子
４ 枠体
５ 内側面溝部
６ 引き回し電極
７ 内側面段差部 DESCRIPTION OF SYMBOLS 1 Crystal oscillator 4 Frame 5 Inner surface groove part 6 Leading electrode 7 Inner surface level | step difference part

Claims (2)

水晶振動子が多数個形成されたウェハーを挟むように上下方向からそれぞれガラスなどの部材から成るウェハーで封止される水晶振動子の電極構造において、
水晶振動子が形成された枠体の内側面溝部に引き回し電極が形成されたことを特徴とする水晶振動子の電極構造。 In the electrode structure of the crystal resonator that is sealed with a wafer made of a member such as glass from above and below so as to sandwich a wafer on which a large number of crystal resonators are formed,
An electrode structure of a crystal resonator, wherein a lead electrode is formed in an inner surface groove portion of a frame body on which the crystal resonator is formed. 水晶振動子が形成された枠体の内側面段差部に引き回し電極が形成されたことを特徴とする請求項１に記載の水晶振動子の電極構造。           2. The electrode structure for a crystal resonator according to claim 1, wherein a lead-out electrode is formed on an inner surface step portion of the frame on which the crystal resonator is formed.
JP2005193063A 2005-06-30 2005-06-30 Crystal unit electrode structure Expired - Fee Related JP4704822B2 (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009118223A (en) * 2007-11-07 2009-05-28 Epson Toyocom Corp Piezoelectric device
JP2010109528A (en) * 2008-10-29 2010-05-13 Epson Toyocom Corp Piezoelectric vibration piece and piezoelectric device
WO2017208866A1 (en) * 2016-05-31 2017-12-07 株式会社村田製作所 Crystal oscillator and method for manufacturing same

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JPS6032827U (en) * 1983-08-11 1985-03-06 キンセキ株式会社 Long side vertical vibrator
JPH0214608A (en) * 1987-12-02 1990-01-18 Centre Electron Horlog Sa Piezoelectric resonator
JP2001267875A (en) * 2000-03-22 2001-09-28 Seiko Epson Corp Crystal oscillator and manufacturing method therefor
JP2004072609A (en) * 2002-08-08 2004-03-04 Seiko Epson Corp Quartz crystal device, quarts crystal device manufacturing method, portable telephone using quartz crystal device, and electronic apparatus using the device
JP2006238266A (en) * 2005-02-28 2006-09-07 Seiko Epson Corp Piezoelectric vibrating piece and piezoelectric vibrator

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6032827U (en) * 1983-08-11 1985-03-06 キンセキ株式会社 Long side vertical vibrator
JPH0214608A (en) * 1987-12-02 1990-01-18 Centre Electron Horlog Sa Piezoelectric resonator
JP2001267875A (en) * 2000-03-22 2001-09-28 Seiko Epson Corp Crystal oscillator and manufacturing method therefor
JP2004072609A (en) * 2002-08-08 2004-03-04 Seiko Epson Corp Quartz crystal device, quarts crystal device manufacturing method, portable telephone using quartz crystal device, and electronic apparatus using the device
JP2006238266A (en) * 2005-02-28 2006-09-07 Seiko Epson Corp Piezoelectric vibrating piece and piezoelectric vibrator

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009118223A (en) * 2007-11-07 2009-05-28 Epson Toyocom Corp Piezoelectric device
JP2010109528A (en) * 2008-10-29 2010-05-13 Epson Toyocom Corp Piezoelectric vibration piece and piezoelectric device
WO2017208866A1 (en) * 2016-05-31 2017-12-07 株式会社村田製作所 Crystal oscillator and method for manufacturing same
JPWO2017208866A1 (en) * 2016-05-31 2019-03-07 株式会社村田製作所 Quartz crystal resonator and manufacturing method thereof

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