JP2006527162A - セラミックス接合方法:反応拡散接合 - Google Patents
セラミックス接合方法:反応拡散接合 Download PDFInfo
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Abstract
Description
図1を参照すれば、工程10では、二つ以上の化合物材料(この物質は、化合物単結晶または多結晶、固溶体単結晶または多結晶、または非晶質材料であってよい)の片の一部または全面を研磨(ラッピングまたはポリシング)する。化合物材料の片のうち結晶は、製造された結晶またはその固溶体あるいは複合体結晶を所望の結晶学的方向で所望のサイズと形状に切断したものを使用できる。
サファイア(White Sapphire)を所望の結晶学的方位、大きさ及び形状に切断した後、その断面を6μmのダイアモンド研磨材から1μmのダイアモンド研磨材まで使用して順次研磨した。本実験では、サファイアを5mm厚さのディスク型に切断した。表面研磨されたサファイア上に、真空蒸着器を使用して、純粋なAl(99.99%)を2〜4μmの厚さで蒸着させた。
実験例2は、実験例1と同じ条件で実験した。但し、研磨面にAl薄膜を蒸着して接合する代わりに、厚さが約18μmであるAl薄膜を2枚の研磨面の間に挿入した。真空焼結炉または高温加圧焼結炉で熱処理した。熱処理は、Ar雰囲気、0〜30MPaの圧力下、600〜1850℃で30分〜2時間にわたって実施した。残りの過程は実験例1と同一であった。
アルミナ(Al2O3)粉末(AKP−50、住友化学社製)を高温加圧焼結炉において1400℃で焼結することによって多結晶アルミナの片を準備し、接合しようという表面上に接合剤としてAlを蒸着させた。
2つの片のMgO単結晶を5mm厚さの長方形に切断し、その片の断面を6μmダイアモンド研磨材から1μmダイアモンド研磨材まで使用して順次研磨した。次いで、表面研磨されたMgO単結晶の表面に真空蒸着器を使用して、純粋なMg(99.99%)を2〜5μmの厚さで蒸着させた。
二つのディスク型のZnS多結晶の断面を研磨した後、表面研磨されたZnS多結晶の表面に真空蒸着器を使用して、純粋なZn(99.99%)を2〜5μmの厚さで蒸着させた。
長方形のソーダライムガラス断面に真空蒸着器を使用して、純粋なAl(99.99%)を2〜5μmの厚さで蒸着させた。さらにAl薄膜のない長方形のソーダライムガラスの片も準備した。
アルミニウムナイトライド(AlN)を接合するために、高温加圧焼結によって製造されたAlNセラミックスの片を2つ準備した。次いで、一つのAlN片の表面を研磨した後、表面研磨されたAlNの片の表面に、真空蒸着器を使用して、純粋なAl(99.99%)を2〜4μmの厚さで蒸着させた。
シリコンナイトライド(Si3N4)を接合するために、高温加圧焼結によって製造されたSi3N4セラミックスの片を2つ準備した。次いで、各Si3N4の片の表面を研磨した後、表面研磨されたSi3N4の片の表面に真空蒸着器を使用して、純粋なSi(99.99%)を2〜4μmの厚さで蒸着させた。残りの過程は、実験例7と同一であった。
シリコンカーバイド(SiC)を接合するために、高温加圧焼結によって製造されたSiCセラミックスの片を準備し、一つのSiC表面を研磨した後、その上にSiとCとを蒸着させた。二つの片を対向させて0〜30MPaの圧力を加えながら1600〜1800℃、メタン(CH4)雰囲気下で2時間にわたって熱処理した。
石英ガラスの接合のために、長方形の石英ガラスの片を2つ準備した。真空蒸着器を使用して純粋なSiを2〜5μmの厚さで蒸着させた。
Claims (13)
- 二つ以上の化合物材料片が接合される表面の全体または一部を研磨、ラッピング、またはポリシングし、
一つ以上の前記研磨、ラッピングまたはポリシングされた表面上に、前記化合物材料内へ組み込まれるか、前記化合物材料と固溶されて前記化合物材料に変換できる接合剤薄膜を挿入、塗布、蒸着、メッキ及びコーティングのうちいずれか一つによって形成し、
前記接合剤薄膜が形成された面を介して前記化合物材料の片を当接させた状態で熱処理することによって、接合界面に第2相の存在なしに直接接合界面を形成し、
前記接合剤薄膜は、金属、金属有機物及び金属化合物からなる群から選択された物質からなる、セラミックスを含む化合物材料の接合方法。 - 前記熱処理ステップ中に、前記接合剤薄膜が、母材及び/または周囲雰囲気ガスとの化学反応により前記化合物材料内へ組み込まれることを特徴とする請求項1に記載の方法。
- 前記直接接合界面を形成した後、大気あるいは真空、または不活性ガス、水素含有ガス、及び前記化合物材料を構成する非金属元素を含有するガスからなる群から選択されたいずれか一つの存在下で、2次熱処理するステップをさらに含むことを特徴とする請求項1に記載の方法。
- 前記2次熱処理が、常温と前記化合物材料の溶融温度との間で1分〜10時間にわたって実施されることを特徴とする請求項3に記載の方法。
- 前記接合剤薄膜を形成した後、大気あるいは真空、または不活性ガス、水素含有ガス、及び前記化合物材料を構成する非金属元素を含有するガスからなる群から選択されるいずれか一つの存在下で、前記接合剤薄膜の溶融温度以下で熱処理するステップをさらに含むことを特徴とする請求項1に記載の方法。
- 前記直接接合界面を形成するための熱処理中に、接合される前記化合物材料の片に電場を印加することを特徴とする請求項1に記載の方法。
- 前記直接接合界面を形成するための熱処理中に、接合される前記化合物材料の片に圧力を加えることを特徴とする請求項1に記載の方法。
- 前記直接接合界面を形成するための熱処理が、0〜100MPaの範囲内の圧力下で実施されることを特徴とする請求項1に記載の方法。
- 前記直接接合界面を形成するための熱処理が、大気あるいは真空、または不活性ガス、水素含有ガス、及び前記化合物材料を構成する非金属元素を含有するガスからなる群から選択されるいずれか一つの存在下で実施されることを特徴とする請求項1に記載の方法。
- 前記直接接合界面を形成するための熱処理は、前記接合剤薄膜の溶融温度と蒸発温度との間の温度で約1分ないし10時間にわたって実施され、ここで溶融温度は、部分溶融温度を意味してもよいことを特徴とする請求項1に記載の方法。
- 前記接合剤薄膜の厚さは、約0.001〜500μm程度に形成されることを特徴とする請求項1に記載の方法。
- 前記直接接合界面を形成するための熱処理が、
前記接合剤薄膜の溶融温度(部分溶融温度も含む)よりも高い高温で加熱し、前記化合物材料の片間の界面上に薄い液状膜を形成して、前記化合物材料の片の界面間の物質移動を容易にし、
前記接合剤薄膜を、母材及び/または熱処理雰囲気ガスから供給される前記母材を構成する非金属元素と化学的に反応させて前記化合物材料中へ組み込むことを特徴とする請求項1に記載の方法。 - (a)二つ以上の単結晶または単結晶固溶体の片が接合される表面の全体または一部を研磨、ラッピングまたはポリシングし、
(b)一つ以上の前記研磨、ラッピングまたはポリシングされた表面上に、熱処理時に前記単結晶内へ固溶できる金属元素を含有し、0.001〜500μm程度の厚さを有する接合剤薄膜を挿入、塗布、蒸着、メッキ及びコーティングのうちいずれか一つによって形成し、
(c)前記接合剤薄膜が形成された面を介して前記単結晶の片を当接させ、
(d)大気あるいは真空、または不活性ガス、水素含有ガス、及び前記単結晶を構成する非金属元素を含有するガスからなる群から選択されるいずれか一つの存在下で、前記接合剤薄膜の溶融温度(部分溶融温度も含む)と蒸発温度との間の温度で約1分ないし10時間にわたって熱処理することによって、接合界面に第2相の存在なしに直接接合界面を形成する、化合物単結晶材料の接合方法。
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PCT/KR2004/001265 WO2004110958A1 (en) | 2003-06-13 | 2004-05-28 | Method of joining ceramics : reaction diffusion-bonding |
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