JP2006524430A - 半導体装置及び該半導体装置を動作させる方法 - Google Patents
半導体装置及び該半導体装置を動作させる方法 Download PDFInfo
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/4824—Pads with extended contours, e.g. grid structure, branch structure, finger structure
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- H—ELECTRICITY
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
- H01L29/7835—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Junction Field-Effect Transistors (AREA)
- Bipolar Transistors (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
Description
として表されることができる。この図において、上側のグループの曲線60は、S21の規格化された偏角(ArgS21)を、下側のグループの曲線61はS21のマグニチュード(MagS21)を、入力電力Pinの関数として表している。ドレイン―ソース電圧Vdsは26Vであり、周波数fは2GHzである。曲線61a−61e及び60a−60eは、更なる金属トラック20における電圧の変化を示しており、この変化は、+20Vから−20Vまでステップ(ステップサイズは10V)状に生じている。マグニチュードMagS21は、金属トラック20における電圧に、少しだけ依存しているだけである。しかしながら、偏角ArgS21は、上述の金属トラック20における+20Vの電圧に関して強く改善されたプロファイル(曲線60a)を呈している。従って、動作中の本発明による装置の(位相、)歪みは、従来技術の装置と比較して大幅に改善されている。
Claims (11)
- 表面に電界効果型のトランジスタを備えており、強くドープされたソースゾーン及びドレインゾーンと、該ソースゾーンと該ドレインゾーンとの間に延在するチャネル領域とを有し、垂直投影に際して前記チャネル領域と重なっているゲート電極が設けられている半導体基体であって、前記ソースゾーンと前記ドレインゾーンと前記ゲート電極とは、前記表面において金属ソースコンタクトとドレインコンタクトとゲート電極コンタクトとにそれぞれ接続されており、更なる金属ストリップが前記ゲート電極コンタクトと前記ドレインコンタクトとの間に位置されており、前記金属ストリップは前記半導体から絶縁され、前記ソースのストリップに局所的に電気的に接続されており、前記ゲート電極と前記ドレインコンタクトとの間にシールドを形成している半導体基体を有する半導体装置において、前記更なる金属ストリップと前記ソースコンタクトとの間の電気的接続はコンデンサを有し、前記更なる金属ストリップは、前記更なる金属ストリップに外部電圧を印加するための接続コンタクトを備えていることを特徴とする半導体基体を有する半導体装置。
- 前記コンデンサは前記半導体基体内に組み込まれており、前記トランジスタの傍の活性領域内に位置されていることを特徴とする、請求項1に記載の半導体装置。
- 前記ソースコンタクトと、前記ドレインコンタクトと、前記ゲート電極コンタクトと、前記更なる金属ストリップと、これらの前記接続コンタクトと、前記コンデンサの電極とは、上下に配され更なる絶縁層によって互いに分離されている2つの分離された金属層で形成されていることを特徴とする、請求項2に記載の半導体装置。
- 前記コンデンサの他の電極は前記半導体基体によって形成されており、該半導体は強くドープされた基板を有し、該基板上には更に弱くドープされたエピタキシャル層が設けられていることを特徴とする、請求項3に記載の半導体装置。
- 前記コンデンサの2つの前記電極は前記金属層の一部を形成しており、前記2つの電極の下側の電極は前記半導体基体に電気的に接続されており、該半導体はこの場所に強くドープされた領域を有していることを特徴とする、請求項3に記載の半導体装置。
- 前記コンデンサの静電容量値は、100MHzと3GHzとの間の範囲にある動作周波数において10pFと1nFとの間の範囲にあることを特徴とする、請求項1ないし5の何れか一項に記載の半導体装置。
- 前記電界効果型のトランジスタはMOSトランジスタであって、前記半導体基体は、前記表面に隣接する第1導電性型の比較的弱くドープされた領域を有し、該領域は対向する前記強くドープされたソースゾーン及びドレインゾーンと、前記ドレインゾーンと前記チャネル領域との間の第2導電性型の弱くドープされたドレイン延長部とを備えており、前記ゲート電極は前記チャネル領域から電気的に絶縁されており、電気的絶縁層は前記表面上に横たわっており、該電気的絶縁層は前記ソースゾーンと前記ドレインゾーンと前記ゲート電極との上方にコンタクトウィンドウを備えており、該コンタクトウィンドウを介して、前記ソースゾーンと前記ドレインゾーンと前記ゲート電極とがそれぞれコンタクトに接続されていることを特徴とする、請求項1に記載の半導体装置。
- 前記コンタクトが、互いに傍に位置されている平行な金属ストリップとして具現化されていることを特徴とする、請求項1又は7に記載の半導体装置。
- 他の金属ストリップが前記更なる金属ストリップと前記ゲート電極との間に設けられており、該他の金属ストリップは電気的絶縁層によって前記半導体基体から分離されており、他の外部電圧を印加するための他の接続コンタクトを備えても備えなくても良いことを特徴とする、請求項1ないし8の何れか一項に記載の半導体装置。
- 当該装置の動作中、前記更なる金属ストリップのコンタクト領域に電圧が印加される、請求項1ないし9の何れか一項に記載の半導体装置を動作させる方法。
- 印加される前記電圧は、前記装置が動作する電力範囲に依存して選択されることを特徴とする、請求項10に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP03101096 | 2003-04-22 | ||
PCT/IB2004/050474 WO2004095577A2 (en) | 2003-04-22 | 2004-04-21 | Semiconductor device comprising a field-effect transistor and method of operating the same |
Publications (1)
Publication Number | Publication Date |
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JP2006524430A true JP2006524430A (ja) | 2006-10-26 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2006506868A Withdrawn JP2006524430A (ja) | 2003-04-22 | 2004-04-21 | 半導体装置及び該半導体装置を動作させる方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7652316B2 (ja) |
EP (1) | EP1618607B1 (ja) |
JP (1) | JP2006524430A (ja) |
CN (1) | CN100546032C (ja) |
WO (1) | WO2004095577A2 (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7411235B2 (en) | 2004-06-16 | 2008-08-12 | Kabushiki Kaisha Toshiba | Spin transistor, programmable logic circuit, and magnetic memory |
US7485514B2 (en) * | 2006-01-05 | 2009-02-03 | Winslow Thomas A | Method for fabricating a MESFET |
US8564057B1 (en) * | 2007-01-09 | 2013-10-22 | Maxpower Semiconductor, Inc. | Power devices, structures, components, and methods using lateral drift, fixed net charge, and shield |
US8552535B2 (en) * | 2008-11-14 | 2013-10-08 | Semiconductor Components Industries, Llc | Trench shielding structure for semiconductor device and method |
JP5712516B2 (ja) * | 2010-07-14 | 2015-05-07 | 住友電気工業株式会社 | 半導体装置 |
CN102610608B (zh) * | 2011-01-19 | 2014-10-15 | 万国半导体股份有限公司 | 集成一个电容的金属氧化物半导体场效应晶体管 |
CN102969360A (zh) * | 2012-12-14 | 2013-03-13 | 中国科学院微电子研究所 | 一种iii-v族半导体纳米线阵列场效应晶体管 |
US20160277838A1 (en) * | 2015-03-17 | 2016-09-22 | Dsp Group Ltd. | Multi-layered mems speaker |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
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DE2855844C2 (de) | 1978-12-22 | 1984-06-07 | Texas Instruments Deutschland Gmbh, 8050 Freising | Schaltung für einen Verstärker mit einem Feldeffekttransistor |
EP0309748A1 (de) | 1987-09-28 | 1989-04-05 | Siemens Aktiengesellschaft | Rückwirkungsarme MOS-Triode |
US5477068A (en) * | 1992-03-18 | 1995-12-19 | Rohm Co., Ltd. | Nonvolatile semiconductor memory device |
US5578860A (en) * | 1995-05-01 | 1996-11-26 | Motorola, Inc. | Monolithic high frequency integrated circuit structure having a grounded source configuration |
JP2000513877A (ja) * | 1997-04-28 | 2000-10-17 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 横形mosトランジスタデバイス |
US5898198A (en) * | 1997-08-04 | 1999-04-27 | Spectrian | RF power device having voltage controlled linearity |
US6313539B1 (en) * | 1997-12-24 | 2001-11-06 | Sharp Kabushiki Kaisha | Semiconductor memory device and production method of the same |
US6215152B1 (en) * | 1998-08-05 | 2001-04-10 | Cree, Inc. | MOSFET having self-aligned gate and buried shield and method of making same |
EP0996159A1 (en) * | 1998-10-12 | 2000-04-26 | STMicroelectronics S.r.l. | Integrated circuit structure comprising capacitor and corresponding manufacturing process |
JP4322414B2 (ja) * | 2000-09-19 | 2009-09-02 | 株式会社ルネサステクノロジ | 半導体装置 |
JP2003100993A (ja) * | 2001-09-21 | 2003-04-04 | Sharp Corp | 半導体メモリ素子 |
US6870219B2 (en) * | 2002-07-31 | 2005-03-22 | Motorola, Inc. | Field effect transistor and method of manufacturing same |
-
2004
- 2004-04-21 JP JP2006506868A patent/JP2006524430A/ja not_active Withdrawn
- 2004-04-21 US US10/551,324 patent/US7652316B2/en not_active Expired - Fee Related
- 2004-04-21 CN CN200480010691.8A patent/CN100546032C/zh not_active Expired - Fee Related
- 2004-04-21 EP EP04728616A patent/EP1618607B1/en not_active Expired - Lifetime
- 2004-04-21 WO PCT/IB2004/050474 patent/WO2004095577A2/en active Application Filing
Also Published As
Publication number | Publication date |
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WO2004095577A2 (en) | 2004-11-04 |
EP1618607B1 (en) | 2012-07-25 |
EP1618607A2 (en) | 2006-01-25 |
US7652316B2 (en) | 2010-01-26 |
CN100546032C (zh) | 2009-09-30 |
US20060220154A1 (en) | 2006-10-05 |
WO2004095577A3 (en) | 2005-01-06 |
CN1777993A (zh) | 2006-05-24 |
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Free format text: JAPANESE INTERMEDIATE CODE: A761 Effective date: 20090122 |