JP2006509357A - 投影対物レンズの意図された光学特性を設定する方法およびマイクロリソグラフィ投影露光装置 - Google Patents
投影対物レンズの意図された光学特性を設定する方法およびマイクロリソグラフィ投影露光装置 Download PDFInfo
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- JP2006509357A JP2006509357A JP2004557843A JP2004557843A JP2006509357A JP 2006509357 A JP2006509357 A JP 2006509357A JP 2004557843 A JP2004557843 A JP 2004557843A JP 2004557843 A JP2004557843 A JP 2004557843A JP 2006509357 A JP2006509357 A JP 2006509357A
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- projection objective
- immersion liquid
- projection
- temperature
- exposure apparatus
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70591—Testing optical components
- G03F7/706—Aberration measurement
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
- G03F7/70891—Temperature
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- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Toxicology (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Description
a)感光性表面と、この表面に面する投影対物レンズの端面との間の中間空間中に浸漬液を導入するステップと、
b)投影対物レンズの結像特性を決定するステップと、
c)決定された結像特性を目標結像特性と比較するステップと、
d)決定された結像特性が目標結像特性にできる限り近くなるまで浸漬液の温度を変化させるステップと
によって達成される。
Claims (8)
- 投影対物レンズ(20;120)の物体平面(22)内に配置されたレチクル(24)を、前記投影対物レンズ(20;120)を介して、前記投影対物レンズの画像平面(28)内に配置された感光性表面(26;66)上に投影するマイクロリソグラフィ投影露光装置(10;210)の一部である前記投影対物レンズ(20;120)の光学結像特性を改善する方法であって、以下のステップ、すなわち
a)前記感光性表面(26;66)と、この表面(26;66)に面する前記投影対物レンズ(20;120)の端面(42)との間の中間空間(40)中に浸漬液(38)を導入するステップと、
b)前記投影対物レンズ(20;120)の結像特性を決定するステップと、
c)前記決定された結像特性を目標結像特性と比較するステップと、
d)前記決定された結像特性が前記目標結像特性にできる限り近くなるまで前記浸漬液(38)の温度を変化させるステップと
を有することを特徴とする方法。 - 前記結像特性が、テスト・レチクル(70)を、前記投影対物レンズ(20)と前記浸漬液(38)を介して、前記画像平面(28)内に配置された感光性要素(64)上に投影することによって決定されることを特徴とする請求項1に記載の方法。
- 前記感光性要素(64)がセンサ機器(64)、特にCCDセンサであることを特徴とする請求項2に記載の方法。
- 前記結像特性が干渉計を使用して決定されることを特徴とする請求項1に記載の方法。
- 前記光学結像特性が、前記投影対物レンズ(20)によって引き起こされる球面収差の範囲であることを特徴とする前記請求項の一項に記載の方法。
- 前記光学結像特性が前記投影対物レンズ(120)の焦点距離であることを特徴とする請求項1から4の一項に記載の方法。
- 感光性表面(26;66)と、この表面(26)に面する投影対物レンズ(20)の端面(42)との間の中間空間(40)中に浸漬液(38)を導入するための手段(32)を有する、前記投影対物レンズ(20)の物体平面(22)内に配置されたレチクル(24)を、前記投影対物レンズ(20)を介して、前記投影対物レンズ(20)の画像平面(28)内に配置された感光性表面(26)上に投影するためのマイクロリソグラフィ投影露光装置であって、
前記画像平面(28)内に配置することができるセンサ機器(64)、特にCCDセンサ、前記浸漬液(38)の目標温度を設定するための温度制御機器(248)、さらに前記温度制御機器(248)に接続され、前記センサ機器(64)によって生成された信号から前記浸漬液(238)の目標温度を決定するために使用することができるコンピュータ・ユニット(68)を有することを特徴とする装置。 - 感光性表面(26;126)と、この表面(26)に面する投影対物レンズ(20;120)の端面(42)との間の中間空間(40)中に導入された浸漬液(38)を有する、物体平面(22)内に配置されたレチクル(24)を、前記投影対物レンズ(20;120)を介して、画像平面(28)内に配置された前記感光性表面(26)上に投影するためのマイクロリソグラフィ投影露光装置であって、
前記浸漬液(38)が前記投影対物レンズ(20;120)に関連する球面収差を補償することができるように前記浸漬液(38)の温度が選択されることを特徴とする装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10257766A DE10257766A1 (de) | 2002-12-10 | 2002-12-10 | Verfahren zur Einstellung einer gewünschten optischen Eigenschaft eines Projektionsobjektivs sowie mikrolithografische Projektionsbelichtungsanlage |
PCT/EP2003/001564 WO2004053596A2 (de) | 2002-12-10 | 2003-02-17 | Verfahren zur einstellung einer optischen eigenschaft eines projektionsobjekts |
Publications (1)
Publication Number | Publication Date |
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JP2006509357A true JP2006509357A (ja) | 2006-03-16 |
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JP2004557843A Pending JP2006509357A (ja) | 2002-12-10 | 2003-02-17 | 投影対物レンズの意図された光学特性を設定する方法およびマイクロリソグラフィ投影露光装置 |
Country Status (6)
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US (4) | US7227616B2 (ja) |
EP (1) | EP1570315B1 (ja) |
JP (1) | JP2006509357A (ja) |
AU (1) | AU2003221481A1 (ja) |
DE (2) | DE10257766A1 (ja) |
WO (1) | WO2004053596A2 (ja) |
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US9665016B2 (en) | 2004-02-02 | 2017-05-30 | Nikon Corporation | Lithographic apparatus and method having substrate table and sensor table to hold immersion liquid |
JP2007103841A (ja) * | 2005-10-07 | 2007-04-19 | Toshiba Corp | 半導体装置の製造方法 |
JP2011510344A (ja) * | 2008-01-21 | 2011-03-31 | プライムセンス リミテッド | 0次低減のための光学設計 |
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US20090002661A1 (en) | 2009-01-01 |
EP1570315A2 (de) | 2005-09-07 |
US8237915B2 (en) | 2012-08-07 |
WO2004053596A3 (de) | 2004-12-02 |
DE10257766A1 (de) | 2004-07-15 |
EP1570315B1 (de) | 2007-12-26 |
DE50308894D1 (de) | 2008-02-07 |
US20070195299A1 (en) | 2007-08-23 |
US7227616B2 (en) | 2007-06-05 |
WO2004053596A2 (de) | 2004-06-24 |
AU2003221481A1 (en) | 2004-06-30 |
US20050264780A1 (en) | 2005-12-01 |
US20130114056A1 (en) | 2013-05-09 |
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