JP2006339635A - Etching composition - Google Patents

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JP2006339635A
JP2006339635A JP2006138377A JP2006138377A JP2006339635A JP 2006339635 A JP2006339635 A JP 2006339635A JP 2006138377 A JP2006138377 A JP 2006138377A JP 2006138377 A JP2006138377 A JP 2006138377A JP 2006339635 A JP2006339635 A JP 2006339635A
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etching
film
etching composition
liquid crystal
crystal display
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Ki Beom Lee
イ，キボム
Sam Young Cho
チョ，サムヨン
Hyun Cheol Shin
シン，ヒュンチョル
Nam Seo Kim
キム，ナムソ
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Dongjin Semichem Co Ltd
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    • C—CHEMISTRY; METALLURGY
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    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
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    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/20—Acidic compositions for etching aluminium or alloys thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/30—Acidic compositions for etching other metallic material
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

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Abstract

<P>PROBLEM TO BE SOLVED: To provide an etching composition which allows the formation of a superior taper by wet-etching an Al-Nd/Mo double film or an Mo/Al-Nd/Mo triple film which is a gate wiring material composing a TFT of a TFT liquid crystal display device, in a single process without causing an undercut phenomenon of a lower film made of Al-Nd or Mo, and also allows the formation of a superior profile by carrying out the same process on an Mo single film which is a source/drain wiring material in use of the same etching composition. <P>SOLUTION: The etching composition for the TFT liquid crystal display device contains a phosphoric acid, a nitric acid, an acetic acid, phosphate, an anion surfactant, and water. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は、エッチング組成物に関し、より詳細には、薄膜トランジスタを用いた液晶表示装置におけるゲート及びソース／ドレイン電極用金属膜に適用し得るエッチング組成物に関する。   The present invention relates to an etching composition, and more particularly to an etching composition that can be applied to a metal film for gate and source / drain electrodes in a liquid crystal display device using a thin film transistor.

エッチング工程は、最終的に基板上に微細回路を形成するための過程であって、現像工程によって形成されたフォトレジストパターンと同一な金属パターンを形成する。
エッチング工程は、その方式によって大きく湿式エッチングと乾式エッチングに区分される。湿式エッチングは金属などと反応して腐蝕させる酸系の化学薬品を用いてフォトレジストパターンのない部分を溶解する方法である。乾式エッチングはイオンを加速させて露出部位の金属を除去することによってパターンを形成する方法である。 The etching process is a process for finally forming a fine circuit on the substrate, and forms a metal pattern identical to the photoresist pattern formed by the development process.
The etching process is roughly classified into wet etching and dry etching depending on the method. Wet etching is a method in which a portion without a photoresist pattern is dissolved using an acid chemical that reacts with a metal or the like to be corroded. Dry etching is a method of forming a pattern by accelerating ions and removing metal at exposed sites.

乾式エッチングは、湿式エッチングに比べて異方性プロファイルを有し、エッチング制御力が優れるという長所がある。しかし、装備が高価であり、大面積化が難しく、エッチング速度が遅いため生産性が低下するという問題点がある。   Dry etching has an advantage in that it has an anisotropic profile and has excellent etching control power compared to wet etching. However, there is a problem that the equipment is expensive, it is difficult to increase the area, and the productivity is lowered because the etching rate is slow.

反面、湿式エッチングは、乾式エッチングに比べて大量及び大型処理が可能であり、エッチング速度が速いので、生産性が高く、装備が安いという長所がある。しかし、エッチャント及び純水の使用量が多く、廃液量が多くなるという問題点がある。   On the other hand, wet etching has the advantages of high productivity and low equipment, because it can be processed in large quantities and large-scale compared to dry etching, and the etching rate is high. However, there are problems in that the amount of etchant and pure water used is large and the amount of waste liquid increases.

一般に、乾式エッチングを行う場合、表面の一部が硬化したフォトレジストを除去するためにプラズマアッシング工程が追加されることがある。これは、装備値段、工程時間損失などの生産性低下及び製品競争力弱化の要因として作用するため、実際の現場では湿式エッチングを主に使用しているのが実情である。   In general, when dry etching is performed, a plasma ashing process may be added to remove a photoresist having a partially cured surface. Since this acts as a factor in reducing productivity and product competitiveness such as equipment cost and process time loss, the actual situation is that wet etching is mainly used in actual sites.

また、湿式エッチングに使用されるエッチャントは、より精密な微細回路が要求されるため、エッチングしようとする金属の種類に応じて、種々のものが適用されている。
一例として、Ａｌ単層膜をエッチングするエッチャントが提案されている（例えば、特許文献１及び特許文献２）。これらは燐酸、硝酸、酢酸、界面活性剤及び水で構成されるエッチャントを開示しており、特許文献１には、さらに、Ａｌ−Ｎｄ膜をエッチングするために燐酸、硝酸、酢酸、水及びフルオロカーボン系界面活性剤を含むエッチング液組成物が開示されている。 Moreover, since the precise | minute etchant is requested | required for the etchant used for wet etching, various things are applied according to the kind of metal to etch.
As an example, an etchant for etching an Al single layer film has been proposed (for example, Patent Document 1 and Patent Document 2). These disclose an etchant composed of phosphoric acid, nitric acid, acetic acid, a surfactant, and water. Patent Document 1 further discloses phosphoric acid, nitric acid, acetic acid, water, and fluorocarbon for etching an Al—Nd film. An etchant composition containing a system surfactant is disclosed.

また、アルミニウム及びＩＴＯをエッチングするためにシュウ酸及び組成物のｐＨを３〜４．５に調節できる酸と塩酸、燐酸、硝酸とを含むエッチング液組成物が提案されている（例えば、特許文献３）。   Further, an etching solution composition containing oxalic acid and an acid capable of adjusting the pH of the composition to 3 to 4.5 for etching aluminum and ITO and hydrochloric acid, phosphoric acid, and nitric acid has been proposed (for example, Patent Documents). 3).

さらに、銀または銀合金をエッチングするために燐酸、硝酸、酢酸、及びポタシウムオキシスルフェートを含む配線用エッチング液について開示されている（例えば、特許文献４）。また、ＩＺＯをエッチングするために塩酸、酢酸、阻害剤及び水を含むエッチング液組成物が開示されている（例えば、特許文献５）。さらに、ソース及びドレイン電極用ＭｏまたはＭｏ−Ｗ（モリブデンとタングステンの合金）をエッチングするために燐酸、硝酸、酢酸、酸化調整剤及び水を含むエッチング液組成物が開示されている（例えば、特許文献６）。   Furthermore, a wiring etching solution containing phosphoric acid, nitric acid, acetic acid, and potassium oxysulfate for etching silver or a silver alloy is disclosed (for example, Patent Document 4). Further, an etching solution composition containing hydrochloric acid, acetic acid, an inhibitor and water for etching IZO is disclosed (for example, Patent Document 5). Further, an etchant composition containing phosphoric acid, nitric acid, acetic acid, an oxidation regulator and water for etching Mo or Mo-W (molybdenum and tungsten alloy) for source and drain electrodes is disclosed (for example, patents). Reference 6).

しかし、従来のエッチャントは一つの金属膜だけをエッチングするための用途に適用されるため、装備と工程との効率性面で劣り、同時に色々な金属膜をエッチングするための組成物が研究されている。   However, since conventional etchants are used for etching only one metal film, the efficiency of equipment and process is inferior, and at the same time, compositions for etching various metal films have been studied. Yes.

一例として、Ａｌ／ＭｏまたはＡｌ−Ｎｄ／Ｍｏ、Ａｌ−Ｎｄ／Ｍｏ−Ｗの二重膜をエッチングするために燐酸、硝酸、酢酸、及び酸化調整剤を含むエッチング液が開示されており（例えば、特許文献７、特許文献８）、Ｍｏ／Ａｌ（Ａｌ−Ｎｄ）／Ｍｏ膜をエッチングするために燐酸、硝酸、酢酸、及び酸化調整剤を含むエッチング液が開示されている（例えば、特許文献９）。   As an example, an etchant is disclosed that includes phosphoric acid, nitric acid, acetic acid, and an oxidation modifier to etch Al / Mo or Al—Nd / Mo, Al—Nd / Mo—W bilayers (eg, , Patent Document 7, Patent Document 8), and an etching solution containing phosphoric acid, nitric acid, acetic acid, and an oxidation regulator for etching a Mo / Al (Al—Nd) / Mo film is disclosed (for example, Patent Documents). 9).

また、Ａｌ−Ｎｄ／Ｍｏ、Ａｌ−Ｎｄ／Ｍｏ−Ｗ、Ｍｏ／Ａｌ−Ｎｄ／Ｍｏ、Ｍｏ−Ｗ／Ａｌ−Ｎｄ／Ｍｏ−Ｗ、Ｍｏ単一膜及びＭｏ−Ｗ単一膜に全て適用可能なエッチング液であって、燐酸、硝酸、酢酸、モリブデンエッチング抑制剤（アンモニウム塩、カリウム塩）、及び水を含むエッチング液が開示されている（例えば、特許文献１０、１１、１２）。   Also applicable to Al-Nd / Mo, Al-Nd / Mo-W, Mo / Al-Nd / Mo, Mo-W / Al-Nd / Mo-W, Mo single film and Mo-W single film. An etching solution which is a possible etching solution and contains phosphoric acid, nitric acid, acetic acid, a molybdenum etching inhibitor (ammonium salt, potassium salt), and water is disclosed (for example, Patent Documents 10, 11, and 12).

しかし、これら従来のエッチング組成物で薄膜トランジスタ液晶表示装置を構成するソース／ドレイン電極用金属膜であるＭｏ膜をエッチングする場合には、プロファイルが図７のようにテーパ不良を引き起こして後続工程で積層される上部膜のステップカバレージに不良を発生させることがあるという問題点がある。   However, when the Mo film, which is a metal film for the source / drain electrodes constituting the thin film transistor liquid crystal display device, is etched with these conventional etching compositions, the profile causes a taper defect as shown in FIG. There is a problem that a defect may occur in the step coverage of the upper film.

また、従来のエッチングまたはエッチング液組成物で薄膜トランジスタ液晶表示装置のＴＦＴを構成するゲート電極用金属膜であるＡｌ−Ｎｄ／Ｍｏ二重膜及びＭｏ／Ａｌ−Ｎｄ／Ｍｏ三重膜をエッチングすると、図８のように上部Ｍｏ膜の突出現象と下部Ａｌ−ＮｄまたはＭｏ膜のアンダーカット現象が発生するという問題点があり、この上部膜の突出現象は追加の工程を実施して除去しなければならず、下部膜のアンダーカット現象は傾斜面で上部膜の断線または上下部金属が短絡される問題点がある。   Further, when the Al—Nd / Mo double film and the Mo / Al—Nd / Mo triple film, which are metal films for gate electrodes constituting the TFT of the thin film transistor liquid crystal display device, are etched with a conventional etching or etching solution composition, FIG. As shown in FIG. 8, there is a problem that the upper Mo film protrudes and the lower Al—Nd or Mo film undercut occurs, and the upper film protrudes by an additional process. However, the undercut phenomenon of the lower film has a problem that the upper film is disconnected or the upper and lower metals are short-circuited on the inclined surface.

したがって、従来の薄膜トランジスタ液晶表示装置のＴＦＴを構成するゲート及びソース／ドレイン電極用金属膜を多重層構造とする場合には、湿式工程と乾式工程とを共に適用することによって、好ましいプロファイルを得るのが一般的であった。
しかし、このような湿式エッチング及び乾式エッチングを共に使用することは工程の面倒さによる生産性の低下及び費用の増加面で不利であるという問題点がある。 Therefore, when the gate and source / drain electrode metal films constituting the TFT of the conventional thin film transistor liquid crystal display device have a multi-layer structure, a favorable profile can be obtained by applying both the wet process and the dry process. Was common.
However, the use of both wet etching and dry etching is disadvantageous in terms of productivity reduction and cost increase due to process complexity.

大韓民国特許出願第１０−２０００−００４７９３３号Korean Patent Application No. 10-2000-0047933 米国特許第４，８９５，６１７号US Pat. No. 4,895,617 大韓民国特許出願第１０−２００１−００３０１９２号Korean Patent Application No. 10-2001-0030192 大韓民国特許出願第１０−２００１−００６５３２７号Korean Patent Application No. 10-2001-0065327 大韓民国特許出願第１０−２００２−００１０２８４号Korean Patent Application No. 10-2002-0010284 大韓民国特許出願第１０−２００１−００１８３５４号Korean Patent Application No. 10-2001-0018354 大韓民国特許出願第１０−２０００−０００２８８６号Korean Patent Application No. 10-2000-0002886 大韓民国特許出願第１０−２００１−００７２７５８号Korean Patent Application No. 10-2001-0072758 大韓民国特許出願第１０−２０００−００１３８６７号Korean Patent Application No. 10-2000-0013867 大韓民国特許出願第１０−２００２−００１７０９３号Korean Patent Application No. 10-2002-0017093 大韓民国特許出願第１０−２００３−００８０５５７号Korean Patent Application No. 10-2003-0080557 大韓民国特許出願第１０−２００４−００１０４０４号Korean Patent Application No. 10-2004-0010404

このような従来の技術の問題点を解決しようと、本発明は、同一の組成物を使用して湿式工程だけで薄膜トランジスタ液晶表示装置のＴＦＴを構成するゲート配線材料であるＡｌ−Ｎｄ／Ｍｏ二重膜又はＭｏ／Ａｌ−Ｎｄ／Ｍｏ三重膜において、下部膜であるＡｌ−Ｎｄ及びＭｏのアンダーカット現象なしに優れたテーパを得ることができ、同時にソース／ドレイン配線材料であるＭｏ単一膜でも優れたプロファイルを形成することができるエッチング組成物を提供することを目的とする。   In order to solve such problems of the prior art, the present invention uses Al-Nd / Mo2 which is a gate wiring material constituting a TFT of a thin film transistor liquid crystal display device using the same composition only by a wet process. In a multilayer film or Mo / Al—Nd / Mo triple film, an excellent taper can be obtained without the undercut phenomenon of Al—Nd and Mo as lower films, and at the same time, a Mo single film as a source / drain wiring material However, an object of the present invention is to provide an etching composition capable of forming an excellent profile.

本発明の他の目的は、同一のエッチング組成物を使用して薄膜トランジスタ液晶表示装置のＴＦＴを構成するゲート配線材料であるＡｌ−Ｎｄ／Ｍｏ二重膜及びＭｏ／Ａｌ−Ｎｄ／Ｍｏ三重膜とソース／ドレイン配線材料であるＭｏ単一膜に適用して優れたエッチング効果を示すことによって装備の効率性増大及び原価節減が可能なエッチング組成物を提供することにある。   Another object of the present invention is to provide an Al—Nd / Mo double film and a Mo / Al—Nd / Mo triple film, which are gate wiring materials constituting the TFT of a thin film transistor liquid crystal display device using the same etching composition. An object of the present invention is to provide an etching composition capable of increasing the efficiency of equipment and reducing the cost by applying an excellent etching effect when applied to a Mo single film as a source / drain wiring material.

本発明の他の目的は、湿式エッチング後に追加の乾式エッチングを実施しなくても湿式エッチングだけでゲート配線材料であるＡｌ−Ｎｄ／Ｍｏ二重膜及びＭｏ／Ａｌ−Ｎｄ／Ｍｏ三重膜とソース／ドレイン配線材料であるＭｏ単一膜に適用して優れたエッチング効果を示すことによって工程を単純化することができ、原価節減及び生産性向上に効果的なエッチング組成物を提供することにある。   Another object of the present invention is to provide an Al—Nd / Mo double film and a Mo / Al—Nd / Mo triple film and a source which are gate wiring materials only by wet etching without performing additional dry etching after wet etching. It is intended to provide an etching composition that can be simplified by applying to a Mo single film that is a drain / drain wiring material to show an excellent etching effect, and that is effective in reducing cost and improving productivity. .

本発明の他の目的は、エッチング組成物の表面張力を低くしてエッチング組成物がよく拡散するようにすることによって大型基板でエッチング均一性を向上させることができるエッチング組成物を提供することにある。   Another object of the present invention is to provide an etching composition that can improve etching uniformity on a large substrate by lowering the surface tension of the etching composition so that the etching composition diffuses well. is there.

前記目的を達成するために、本発明は、ａ）燐酸４０〜８０重量％；ｂ）硝酸２〜１５重量％；ｃ）酢酸３〜２０重量％；ｄ）燐酸塩０．０１〜５重量％；ｅ）陰イオン界面活性剤０．００１〜１重量％；及びｆ）残量の水を含む薄膜トランジスタ液晶表示装置のエッチング組成物を提供する。   To achieve the above object, the present invention provides: a) phosphoric acid 40-80% by weight; b) nitric acid 2-15% by weight; c) acetic acid 3-20% by weight; d) phosphate 0.01-5% by weight. And e) an etching composition for a thin film transistor liquid crystal display, comprising 0.001 to 1% by weight of an anionic surfactant; and f) a remaining amount of water.

また、本発明は前記エッチング組成物でエッチングする工程を含む薄膜トランジスタ液晶表示装置の製造方法を提供する。   In addition, the present invention provides a method for manufacturing a thin film transistor liquid crystal display device including a step of etching with the etching composition.

本発明によるエッチング組成物は、湿式エッチング後に追加の乾式エッチングを実施しなくても、つまり、単一工程でも、同一の組成物を使用して湿式工程だけで薄膜トランジスタ液晶表示装置のＴＦＴを構成するゲート配線材料であるＡｌ−Ｎｄ／Ｍｏ二重膜とＭｏ／Ａｌ−Ｎｄ／Ｍｏ三重膜で、下部膜であるＡｌ−ＮｄまたはＭｏのアンダーカット現象なしに優れたテーパを得ることができ、同時にソース／ドレイン配線材料であるＭｏ単一膜でも優れたプロファイルを形成することができる。   The etching composition according to the present invention constitutes a TFT of a thin film transistor liquid crystal display without using any additional dry etching after wet etching, that is, using a single process even in a single process. With the Al-Nd / Mo double film and the Mo / Al-Nd / Mo triple film as the gate wiring material, an excellent taper can be obtained without the undercut phenomenon of the Al-Nd or Mo as the lower film. An excellent profile can be formed even with a Mo single film which is a source / drain wiring material.

また、同一のエッチング組成物を使用して、ゲート配線材料であるＡｌ−Ｎｄ／Ｍｏ二重膜とＭｏ／Ａｌ−Ｎｄ／Ｍｏ三重膜及びソース／ドレイン配線材料であるＭｏ単一膜に適用することによって工程の単純化、装備の効率性増大及び原価節減が可能なだけでなく、エッチング組成物の表面張力を低くして、エッチング組成物がよく拡散するようにすることによって大型基板でエッチング均一性を増加させることができる。   Also, using the same etching composition, it is applied to the Al—Nd / Mo double film and the Mo / Al—Nd / Mo triple film as the gate wiring material and the Mo single film as the source / drain wiring material. This not only simplifies the process, increases the efficiency of equipment, and reduces costs, but also lowers the surface tension of the etching composition so that the etching composition diffuses well, thereby uniformly etching the large substrate. Sex can be increased.

以下、本発明を詳細に説明する。
本発明の薄膜トランジスタ液晶表示装置のエッチング組成物は、ａ）燐酸４０〜８０重量％、ｂ）硝酸２〜１５重量％、ｃ）酢酸３〜２０重量％、ｄ）燐酸塩０．０１〜５重量％、ｅ）陰イオン界面活性剤０．００１〜１重量％、及びｆ）残量の水を含むことを特徴とする。 Hereinafter, the present invention will be described in detail.
The etching composition of the thin film transistor liquid crystal display device of the present invention comprises: a) phosphoric acid 40 to 80% by weight, b) nitric acid 2 to 15% by weight, c) acetic acid 3 to 20% by weight, d) phosphate 0.01 to 5% by weight. %), E) 0.001 to 1% by weight of an anionic surfactant, and f) remaining amount of water.

本発明に使用される燐酸、硝酸、酢酸、燐酸塩及び水は、半導体工程用として使用可能な純度のものを使用することが好ましく、市販されているものを使用するか、工業用等級のものを、当該分野において公知の法によって精製して使用することができる。   The phosphoric acid, nitric acid, acetic acid, phosphate, and water used in the present invention are preferably those having a purity that can be used for semiconductor processes, either commercially available or industrial grade. Can be purified and used by methods known in the art.

本発明に使用される前記ａ）の燐酸は酸化アルミニウムを分解する作用を果たす。
前記燐酸はエッチング組成物に４０〜８０重量％で含まれるのが好ましく、さらに好ましくは、５０〜７５重量％で含まれる。その含量が前記範囲内である場合には硝酸とアルミニウムとが反応して形成された酸化アルミニウムが適切に分解されて、エッチング速度が速くなって、生産性が向上する効果がある。 The phosphoric acid a) used in the present invention functions to decompose aluminum oxide.
The phosphoric acid is preferably included in the etching composition at 40 to 80% by weight, and more preferably 50 to 75% by weight. When the content is within the above range, the aluminum oxide formed by the reaction of nitric acid and aluminum is appropriately decomposed to increase the etching rate, thereby improving the productivity.

本発明に使用される前記ｂ）の硝酸はアルミニウムと反応して酸化アルミニウムを形成させる。
前記硝酸はエッチング組成物に２〜１５重量％で含まれるのが好ましく、さらに好ましくは、３〜１０重量％で含まれる。その含量が前記範囲内である場合には上部膜であるＭｏ膜及び下部膜であるＡｌ−Ｎｄ及びＭｏ膜で構成されたゲート金属膜と他の層の間の選択比を効果的に調節することができるという効果があり、特に前記硝酸が２重量％未満である場合には、Ａｌ−Ｎｄ／Ｍｏ二重膜及びＭｏ／Ａｌ−Ｎｄ／Ｍｏ三重膜で上部膜と下部Ｍｏ膜が突出する現象が発生するという問題点がある。 The nitric acid of b) used in the present invention reacts with aluminum to form aluminum oxide.
The nitric acid is preferably included in the etching composition at 2 to 15% by weight, more preferably 3 to 10% by weight. When the content is within the above range, the selectivity between the gate metal film composed of the Mo film as the upper film and the Al-Nd and Mo films as the lower film and other layers is effectively adjusted. In particular, when the nitric acid is less than 2% by weight, the upper film and the lower Mo film protrude from the Al—Nd / Mo double film and the Mo / Al—Nd / Mo triple film. There is a problem that the phenomenon occurs.

本発明に使用される前記ｃ）の酢酸は反応速度を調節する緩衝剤の作用を果たす。
前記酢酸はエッチング組成物に３〜２０重量％で含まれるのが好ましく、さらに好ましくは、８〜１５重量％で含まれる。その含量が前記範囲内である場合には反応速度を適切に調節してエッチング速度を向上させ、それによって生産性を向上させることができる効果がある。 The acetic acid of c) used in the present invention serves as a buffer that adjusts the reaction rate.
The acetic acid is preferably included in the etching composition in an amount of 3 to 20% by weight, and more preferably 8 to 15% by weight. When the content is within the above range, there is an effect that the etching rate can be improved by appropriately adjusting the reaction rate, thereby improving the productivity.

本発明に使用される前記ｄ）の燐酸塩はＭｏ単一膜に優れたプロファイルを形成させる作用を果たす。特に、前記燐酸塩はエッチング組成物に使用されることによって同一のエッチング組成物を使用してソース／ドレインＭｏ単一膜で優れたエッチング効果を示す作用を果たすだけでなく、Ａｌ−Ｎｄ／Ｍｏ二重膜とＭｏ／Ａｌ−Ｎｄ／Ｍｏ三重膜でも優れたエッチング効果を示す作用を果たす。   The phosphate d) used in the present invention serves to form an excellent profile in the Mo single film. In particular, when the phosphate is used in the etching composition, the same etching composition is used to perform an excellent etching effect on the source / drain Mo single film, but also Al—Nd / Mo. The double film and the Mo / Al—Nd / Mo triple film also function to exhibit an excellent etching effect.

前記燐酸塩はＮａＨ2ＰＯ4、Ｎａ2ＨＰＯ4、Ｎａ3ＰＯ4、ＮＨ4Ｈ2ＰＯ4、（ＮＨ4）3ＰＯ4、ＫＨ2ＰＯ4、Ｋ2ＨＰＯ4、Ｋ3ＰＯ4、Ｃａ（Ｈ2ＰＯ4）2、Ｃａ2ＨＰＯ4、またはＣａ3ＰＯ4等を使用することができ、好ましくは、Ｋ3ＰＯ4または（ＮＨ4）3ＰＯ4である。これらは、単独又は２種以上を組み合わせて用いてもよい。 The phosphates are NaH 2 PO 4 , Na 2 HPO 4 , Na 3 PO 4 , NH 4 H 2 PO 4 , (NH 4 ) 3 PO 4 , KH 2 PO 4 , K 2 HPO 4 , K 3 PO 4 , Ca (H 2 PO 4 ) 2 , Ca 2 HPO 4 , Ca 3 PO 4 and the like can be used, and K 3 PO 4 or (NH 4 ) 3 PO 4 is preferable. You may use these individually or in combination of 2 or more types.

前記燐酸塩はエッチング組成物に０．０１〜５重量％で含まれるのが好ましく、さらに好ましくは、０．１〜３重量％で含まれる。その含量が前記範囲内である場合にはＡｌ−Ｎｄ／Ｍｏ二重膜またはＭｏ／Ａｌ−Ｎｄ／Ｍｏ三重膜で下部膜であるＡｌ−ＮｄまたはＭｏのアンダーカット現象を発生させないだけでなく、同時にＭｏ単一膜でも優れたプロファイルを形成させることができる効果がある。   The phosphate is preferably included in the etching composition at 0.01 to 5% by weight, more preferably 0.1 to 3% by weight. When the content is within the above range, not only does the Al-Nd / Mo double film or the Mo / Al-Nd / Mo triple film not cause the undercut phenomenon of the lower film, Al-Nd or Mo, At the same time, an excellent profile can be formed even with a single Mo film.

本発明に使用される前記ｅ）の陰イオン界面活性剤は酸に使用可能であって、エッチング組成物がＡｌ−Ｎｄ膜に対する接触角を低くすることによってエッチング組成物のぬれ性を改善させてエッチング組成物の粘度を低下させ、エッチング均一性を増加させる作用を果たす。   The anionic surfactant of e) used in the present invention can be used for acids, and the etching composition improves the wettability of the etching composition by lowering the contact angle to the Al—Nd film. It acts to lower the viscosity of the etching composition and increase the etching uniformity.

前記陰イオン界面活性剤は、アンモニウムフルオロアルキルスルホンイミド（ａｍｍｏｎｉｕｍｆｌｕｏｒｏａｌｋｙｌｓｕｌｆｏｎｉｍｉｄｅ）またはアンモニウムペルフルオロオクタン−１−スルホネート（Ｃ8Ｆ17ＳＯ3ＮＨ4）を使用するのが好ましい。これらは、単独又は２種以上を組み合わせて用いてもよい。 The anionic surfactant is preferably ammonium fluoroalkylsulfonimide or ammonium perfluorooctane-1-sulfonate (C 8 F 17 SO 3 NH 4 ). You may use these individually or in combination of 2 or more types.

前記陰イオン界面活性剤はエッチング組成物に０．００１〜１重量％で含まれるのが好ましく、その含量が前記範囲内である場合にはＡｌ−Ｎｄ／Ｍｏ二重膜とＭｏ／Ａｌ−Ｎｄ／Ｍｏ三重膜のアンダーカット現象及びＭｏ単一膜のプロファイル形成に影響を与えずにエッチング組成物の表面張力を低くしてエッチング組成物がよく拡散するようにすることによって大型基板でエッチング均一性を増加させる効果がある。   The anionic surfactant is preferably included in the etching composition in an amount of 0.001 to 1% by weight. When the content is within the above range, the Al—Nd / Mo bilayer and the Mo / Al—Nd are included. Etching uniformity on large substrates by lowering the surface tension of the etching composition and allowing the etching composition to diffuse well without affecting the undercut phenomenon of the / Mo triple film and profile formation of the Mo single film Has the effect of increasing

本発明に使用される前記ｆ）の水はエッチング組成物に残量で含まれ、硝酸とアルミニウムが反応して生成された酸化アルミニウムを分解し、エッチング組成物を希釈する作用を果たす。   The water f) used in the present invention is contained in the remaining amount in the etching composition, and acts to decompose the aluminum oxide produced by the reaction of nitric acid and aluminum to dilute the etching composition.

前記水は残量のイオン交換樹脂を通じてろ過した純水を使用するのが好ましく、特に比抵抗が１８メガオーム（ＭΩ）以上である超純水を使用するのがさらに好ましい。
また、本発明はこのような成分からなるエッチング組成物でエッチングする工程を含む薄膜トランジスタ液晶表示装置の製造方法を提供する。このようなエッチング前後においては、一般に、薄膜トランジスタ液晶表示装置の製造方法に適用される通常の工程が適用される。 The water is preferably pure water filtered through the remaining amount of ion exchange resin, and more preferably ultrapure water having a specific resistance of 18 megaohms (MΩ) or more.
Moreover, this invention provides the manufacturing method of the thin-film transistor liquid crystal display device including the process etched with the etching composition which consists of such a component. Before and after such etching, generally, a normal process applied to a method for manufacturing a thin film transistor liquid crystal display device is applied.

本発明の薄膜トランジスタ液晶表示装置の製造方法は、前記のような成分を含む本発明のエッチング組成物を使用して湿式エッチング後に追加の乾式エッチングを実施しなくても、同一の組成物を使用して湿式工程だけで薄膜トランジスタ液晶表示装置のＴＦＴを構成するゲート配線材料であるＡｌ−Ｎｄ／Ｍｏ二重膜及びＭｏ／Ａｌ−Ｎｄ／Ｍｏ三重膜で下部膜であるＡｌ−ＮｄまたはＭｏのアンダーカット現象なしに優れたテーパを得ることによって、後続工程時に傾斜面で断線される不良を防止することができ、同時にソース／ドレイン配線材料であるＭｏ単一膜でも、逆テーパ現象を防止して上／下層が短絡される不良を防止することができ、図１に示したように角度が５０〜７０°である優れたプロファイルを形成することができる長所がある。   The method for manufacturing a thin film transistor liquid crystal display device of the present invention uses the same composition even if no additional dry etching is performed after the wet etching using the etching composition of the present invention containing the above components. Al—Nd / Mo double film and Mo / Al—Nd / Mo triple film which are gate wiring materials constituting TFTs of thin film transistor liquid crystal display devices only by a wet process, and an undercut of Al—Nd or Mo which is a lower film. By obtaining an excellent taper without any phenomenon, it is possible to prevent defects that are disconnected at the inclined surface in the subsequent process, and at the same time, prevent the reverse taper phenomenon even with the Mo single film that is the source / drain wiring material. / Can prevent defects in which the lower layer is short-circuited, and can form an excellent profile with an angle of 50 to 70 ° as shown in FIG. There is an advantage.

また、同一のエッチング組成物を使用してゲート配線材料であるＡｌ−Ｎｄ／Ｍｏ二重膜とＭｏ／Ａｌ−Ｎｄ／Ｍｏ三重膜、ソース／ドレイン配線材料であるＭｏ単一膜に適用することによって工程の単純化、装備の効率性増大及び原価節減が可能なだけでなく、エッチング組成物の表面張力を低くしてエッチング組成物がよく拡散するようにすることによって大型基板でエッチング均一性を増加させることができる効果がある。
以下、本発明の理解のために好ましい実施例を示すが、下記の実施例は本発明を例示するものに過ぎず、本発明の範囲が下記の実施例に限定されるわけではない。 In addition, the same etching composition is used to apply to the Al—Nd / Mo double film and the Mo / Al—Nd / Mo triple film as the gate wiring material and the Mo single film as the source / drain wiring material. This not only simplifies the process, increases the efficiency of equipment, and reduces costs, but also reduces etching surface uniformity by reducing the surface tension of the etching composition so that the etching composition diffuses well. There is an effect that can be increased.
Hereinafter, preferred examples for understanding the present invention will be described. However, the following examples are merely illustrative of the present invention, and the scope of the present invention is not limited to the following examples.

実施例１
燐酸６３重量％、硝酸４重量％、酢酸１７重量％、燐酸塩としてＫ3ＰＯ4１重量％、陰イオン界面活性剤としてアンモニウムフルオロアルキルスルホンイミド０．００５重量％及び残量の水を均一に混合してエッチング組成物を製造した。
前記エッチング組成物をＭｏ単一膜に適用した結果、図１に示したように、プロファイルの角度が５０〜７０°であって優れていることを確認することができた。 Example 1
63% by weight of phosphoric acid, 4% by weight of nitric acid, 17% by weight of acetic acid, 1% by weight of K 3 PO 4 as a phosphate, 0.005% by weight of ammonium fluoroalkylsulfonimide as an anionic surfactant and the remaining water uniformly An etching composition was prepared by mixing.
As a result of applying the etching composition to the Mo single film, as shown in FIG. 1, it was confirmed that the profile angle was 50 to 70 °, which was excellent.

実施例２及び比較例１〜２
前記実施例１で下記表１に示す組成比で使用したことを除いては、前記実施例１と同様な方法で実施してエッチング組成物を製造した。この時、下記表１の単位は重量％である。 Example 2 and Comparative Examples 1-2
An etching composition was produced in the same manner as in Example 1 except that it was used in the composition ratio shown in Table 1 below in Example 1. At this time, the unit of Table 1 below is% by weight.

Figure 2006339635
Figure 2006339635

実施例１または２及び比較例１または２で製造したエッチング組成物の性能は下記のように通常の方法によって実施し、その結果を下記表３及び図２〜６に示した。
まず、ガラス基板上にＭｏ／Ａｌ−Ｎｄ二重膜、Ｍｏ／Ａｌ−Ｎｄ／Ｍｏ三重膜及びＭｏ単一膜をそれぞれスパッタリングによって形成させた後、フォトレジストをコーティングし、現像によってパターンを形成させた試験片に、実施例１または２及び比較例１または２で製造したエッチング組成物をスプレーしてエッチング処理した。
次いで、エッチング後、断面を走査電子顕微鏡（ＳＥＭ、Ｓ−４１００、日立社）で観察して、エッチング組成物の性能を下記の評価基準に従って評価した。 The performance of the etching composition produced in Example 1 or 2 and Comparative Example 1 or 2 was carried out by the usual method as described below, and the results are shown in Table 3 and FIGS.
First, a Mo / Al—Nd double film, a Mo / Al—Nd / Mo triple film, and a Mo single film are formed on a glass substrate by sputtering, and then a photoresist is coated, and a pattern is formed by development. Then, the etching composition prepared in Example 1 or 2 and Comparative Example 1 or 2 was sprayed on the test piece and etched.
Then, after etching, the cross section was observed with a scanning electron microscope (SEM, S-4100, Hitachi), and the performance of the etching composition was evaluated according to the following evaluation criteria.

Figure 2006339635
Figure 2006339635

Figure 2006339635
Figure 2006339635

上記表３から、本発明によって製造した実施例１または２のエッチング組成物が比較例１または２と比較してＡｌ−Ｎｄ／Ｍｏ二重膜（図２、図４）とＭｏ／Ａｌ−Ｎｄ／Ｍｏ三重膜（図３、図４）及びＭｏ単一膜（図１、図４）で全て優れたエッチング効果を示すことを確認することができた。   From Table 3 above, the etching composition of Example 1 or 2 manufactured according to the present invention was compared with Comparative Example 1 or 2, and the Al—Nd / Mo double film (FIG. 2, FIG. 4) and Mo / Al—Nd. It was confirmed that the / Mo triple film (FIGS. 3 and 4) and the Mo single film (FIGS. 1 and 4) all showed excellent etching effects.

反面、燐酸塩を使用しない比較例１及び硝酸を４重量％未満で使用した比較例２の場合には、図５及び図６に示したように、Ａｌ−Ｎｄ／Ｍｏ二重膜でアンダーカット現象が発生し、Ｍｏ／Ａｌ−Ｎｄ／Ｍｏ三重膜で上部及び下部Ｍｏの突出現象が発生した。だけでなく、Ｍｏ単一膜でもプロファイルの形成が不良なことを確認することができた。   On the other hand, in the case of Comparative Example 1 in which phosphate is not used and Comparative Example 2 in which nitric acid is used at less than 4% by weight, as shown in FIGS. 5 and 6, an undercut is made with an Al—Nd / Mo bilayer film. The phenomenon occurred, and the upper and lower Mo protrusions occurred in the Mo / Al—Nd / Mo trilayer. In addition, it was confirmed that the profile formation was poor even with a single Mo film.

前記実施例２のエッチング組成物は、図４に示したように、Ａｌ−Ｎｄ／Ｍｏ二重膜とＭｏ／Ａｌ−Ｎｄ／Ｍｏ三重膜で上部膜であるＭｏ膜の突出現象と下部膜であるＡｌ−ＮｄまたはＭｏ膜のアンダーカット現象が発生した比較例１（図５）と比較して、下部膜であるＡｌ−Ｎｄのアンダーカット現象なしに優れたテーパを得ることができることを確認でき、また、Ｍｏ単一膜でもテーパ不良を引き起こして後続工程で積層される上部膜のステップカバレージに問題を発生させた比較例１（図５）と比較して、図４に示したように優れたテーパを得ることができることを確認することができた。
このような結果から、本発明によるエッチング組成物は従来のエッチング組成物によるエッチングより優れたステップカバレージを形成したことが分かった。 As shown in FIG. 4, the etching composition of Example 2 has an Al-Nd / Mo double film and a Mo / Al—Nd / Mo triple film as an upper film, and a Mo film protruding phenomenon and a lower film. Compared to Comparative Example 1 (FIG. 5) in which the undercut phenomenon of an Al—Nd or Mo film occurred, it can be confirmed that an excellent taper can be obtained without the undercut phenomenon of Al—Nd as the lower film. In addition, as shown in FIG. 4, it is superior to Comparative Example 1 (FIG. 5) in which the Mo single film causes a taper defect and causes a problem in the step coverage of the upper film laminated in the subsequent process. It was confirmed that a taper can be obtained.
From these results, it was found that the etching composition according to the present invention formed step coverage superior to the etching by the conventional etching composition.

本発明の一実施例によるエッチング組成物をＭｏ単一膜に使用して形成されたプロファイルを示す写真である。6 is a photograph showing a profile formed using an etching composition according to an embodiment of the present invention for a Mo single film. 本発明の一実施例によるエッチング組成物をＡｌ−Ｎｄ／Ｍｏ二重膜に適用した結果を示す写真である。4 is a photograph showing a result of applying an etching composition according to an embodiment of the present invention to an Al—Nd / Mo bilayer film. 本発明の一実施例によるエッチング組成物をＭｏ／Ａｌ−Ｎｄ／Ｍｏ三重膜に適用した結果を示す写真である。4 is a photograph showing a result of applying an etching composition according to an embodiment of the present invention to a Mo / Al—Nd / Mo trilayer. 本発明の一実施例によるエッチング組成物をＭｏ単一膜、Ａｌ−Ｎｄ／Ｍｏ二重膜、及びＭｏ／Ａｌ−Ｎｄ／Ｍｏ三重膜に適用した結果を示す写真である。3 is a photograph showing a result of applying an etching composition according to an embodiment of the present invention to a Mo single film, an Al—Nd / Mo double film, and a Mo / Al—Nd / Mo triple film. 燐酸塩を使用せずに製造したエッチング組成物をＭｏ単一膜、Ａｌ−Ｎｄ／Ｍｏ二重膜、及びＭｏ／Ａｌ−Ｎｄ／Ｍｏ三重膜に適用した結果を示す写真である。It is a photograph which shows the result of having applied the etching composition manufactured without using a phosphate to Mo single film, Al-Nd / Mo double film, and Mo / Al-Nd / Mo triple film. 硝酸の含量を少なく使用して製造したエッチング組成物をＭｏ単一膜、Ａｌ−Ｎｄ／Ｍｏ二重膜、及びＭｏ／Ａｌ−Ｎｄ／Ｍｏ三重膜に適用した結果を示す写真である。It is a photograph which shows the result of having applied the etching composition manufactured using little content of nitric acid to Mo single film, Al-Nd / Mo double film, and Mo / Al-Nd / Mo triple film. Ｍｏ単一膜に従来のエッチング組成物を使用した結果、テーパ（ｔａｐｅｒ）不良が引き起こされたことを示す写真である。6 is a photograph showing that a taper defect is caused as a result of using a conventional etching composition for a single Mo film. Ｍｏ／Ａｌ−Ｎｄ二重膜及びＭｏ／Ａｌ−Ｎｄ／Ｍｏ三重膜に従来のエッチング組成物を使用した結果、上部膜であるＭｏ膜の突出現象と、下部膜であるＡｌ−ＮｄまたはＭｏ膜のアンダーカット現象が発生したことを示す写真である。As a result of using the conventional etching composition for the Mo / Al—Nd double film and the Mo / Al—Nd / Mo triple film, the protrusion phenomenon of the Mo film as the upper film and the Al—Nd or Mo film as the lower film It is a photograph which shows that the undercut phenomenon of no.

Claims (6)

ａ）燐酸４０〜８０重量％；
ｂ）硝酸２〜１５重量％；
ｃ）酢酸３〜２０重量％；
ｄ）燐酸塩０．０１〜５重量％；
ｅ）陰イオン界面活性剤０．００１〜１重量％；及び
ｆ）残量の水
を含む薄膜トランジスタ液晶表示装置のエッチング組成物。 a) 40-80 wt% phosphoric acid;
b) 2-15% by weight of nitric acid;
c) 3-20% by weight acetic acid;
d) 0.01-5% by weight phosphate;
e) An anionic surfactant 0.001-1 wt%; and f) an etching composition for a thin film transistor liquid crystal display device comprising a remaining amount of water. 前記薄膜トランジスタ液晶表示装置が、Ａｌ−Ｎｄ／Ｍｏ二重膜またはＭｏ／Ａｌ−Ｎｄ／Ｍｏ三重膜からなるＴＦＴ ＬＣＤのゲート膜である請求項１に記載の薄膜トランジスタ液晶表示装置のエッチング組成物。   2. The etching composition of a thin film transistor liquid crystal display device according to claim 1, wherein the thin film transistor liquid crystal display device is a gate film of a TFT LCD comprising an Al—Nd / Mo double film or a Mo / Al—Nd / Mo triple film. 前記薄膜トランジスタ液晶表示装置が、Ｍｏ単一膜からなるＴＦＴ ＬＣＤのソース／ドレイン膜である請求項１に記載の薄膜トランジスタ液晶表示装置のエッチング組成物。   2. The etching composition of a thin film transistor liquid crystal display device according to claim 1, wherein the thin film transistor liquid crystal display device is a source / drain film of a TFT LCD made of a single Mo film. 前記ｄ）の燐酸塩は、ＮａＨ2ＰＯ4、Ｎａ2ＨＰＯ4、Ｎａ3ＰＯ4、ＮＨ4Ｈ2ＰＯ4、（ＮＨ4）3ＰＯ4、ＫＨ2ＰＯ4、Ｋ2ＨＰＯ4、Ｋ3ＰＯ4、Ｃａ（Ｈ2ＰＯ4）2、Ｃａ2ＨＰＯ4及びＣａ3ＰＯ4からなる群より選択される１種以上である請求項１に記載の薄膜トランジスタ液晶表示装置のエッチング組成物。 The phosphate of d) is NaH 2 PO 4 , Na 2 HPO 4 , Na 3 PO 4 , NH 4 H 2 PO 4 , (NH 4 ) 3 PO 4 , KH 2 PO 4 , K 2 HPO 4 , K 3. The etching composition for a thin film transistor liquid crystal display device according to claim 1, wherein the etching composition is one or more selected from the group consisting of PO 4 , Ca (H 2 PO 4 ) 2 , Ca 2 HPO 4 and Ca 3 PO 4 . 前記ｅ）の陰イオン界面活性剤が、アンモニウムフルオロアルキルスルホンイミドまたはアンモニウムペルフルオロオクタン−１−スルホネート（Ｃ8Ｆ17ＳＯ3ＮＨ4）である請求項１に記載の薄膜トランジスタ液晶表示装置のエッチング組成物。 Anionic surfactants of the e) is, the etching composition of the thin film transistor liquid crystal display device according to claim 1 is ammonium fluoroalkyl sulfonimide or ammonium perfluorooctanoate-1-sulfonate (C 8 F 17 SO 3 NH 4) . 請求項１〜５のうちのいずれか一項のエッチング組成物でエッチングする工程を含む薄膜トランジスタ液晶表示装置の製造方法。

A method for manufacturing a thin film transistor liquid crystal display device, comprising a step of etching with the etching composition according to claim 1.

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