JP2006330662A - 表示デバイスの素子構造 - Google Patents
表示デバイスの素子構造 Download PDFInfo
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- JP2006330662A JP2006330662A JP2005302871A JP2005302871A JP2006330662A JP 2006330662 A JP2006330662 A JP 2006330662A JP 2005302871 A JP2005302871 A JP 2005302871A JP 2005302871 A JP2005302871 A JP 2005302871A JP 2006330662 A JP2006330662 A JP 2006330662A
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- alloy film
- based alloy
- film
- transparent electrode
- electrode layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53214—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being aluminium
- H01L23/53219—Aluminium alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Thin Film Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
【解決手段】 本発明は、Al系合金膜により形成された配線回路と、半導体層と、透明電極層とを備える表示デバイスの素子構造であって、半導体層および/または透明電極層と直接接合される前記配線回路を形成するAl系合金膜の表面粗度Raが2.0Å〜20.0Åであるものとした。このAl系合金膜は、Niを含有するAl−Ni系合金膜が好ましく、さらにBを含有するAl−Ni−B系合金膜が望ましい。
【選択図】 なし
Description
(例えば、特許文献1、特許文献2参照)。
Claims (3)
- Al系合金膜により形成された配線回路と、半導体層と、透明電極層とを備える表示デバイスの素子構造であって、
半導体層および/または透明電極層と直接接合される前記配線回路を形成するAl系合金膜の表面粗度Raが2.0Å〜20.0Åであることを特徴とする表示デバイスの素子構造。 - Al系合金膜は、Niを含有するAl−Ni系合金膜である請求項1に記載の表示デバイスの素子構造。
- 前記Al−Ni系合金膜は、さらにBを含有するAl−Ni−B系合金膜である請求項2に記載の表示デバイスの素子構造。
Priority Applications (9)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005302871A JP4657882B2 (ja) | 2005-04-26 | 2005-10-18 | 表示デバイスの素子構造 |
KR1020077008127A KR100959579B1 (ko) | 2005-04-26 | 2006-03-30 | Al-Ni-B 합금 배선 재료 및 그것을 사용한 소자 구조 |
AT06730624T ATE499455T1 (de) | 2005-04-26 | 2006-03-30 | Elementstruktur mit einem verdrahtungsmaterial aus al-ni-b-legierung |
EP06730624A EP1878809B1 (en) | 2005-04-26 | 2006-03-30 | ELEMENT STRUCTURE USING A Al-Ni-B ALLOY WIRING MATERIAL |
DE602006020265T DE602006020265D1 (de) | 2005-04-26 | 2006-03-30 | Elementstruktur mit einem verdrahtungsmaterial aus al-ni-b-legierung |
US11/666,300 US7531904B2 (en) | 2005-04-26 | 2006-03-30 | Al-Ni-B alloy wiring material and element structure using the same |
PCT/JP2006/306676 WO2006117954A1 (ja) | 2005-04-26 | 2006-03-30 | Al-Ni-B合金配線材料及びそれを用いた素子構造 |
TW095114832A TWI326309B (en) | 2005-04-26 | 2006-04-26 | A1-ni-b alloy wiring material and device structure using the same |
US11/851,804 US7755198B2 (en) | 2005-04-26 | 2007-09-07 | Al-Ni-based alloy wiring material and element structure using the same |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005128670 | 2005-04-26 | ||
JP2005302871A JP4657882B2 (ja) | 2005-04-26 | 2005-10-18 | 表示デバイスの素子構造 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006330662A true JP2006330662A (ja) | 2006-12-07 |
JP4657882B2 JP4657882B2 (ja) | 2011-03-23 |
Family
ID=37307690
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005302871A Expired - Fee Related JP4657882B2 (ja) | 2005-04-26 | 2005-10-18 | 表示デバイスの素子構造 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP4657882B2 (ja) |
CN (1) | CN100564560C (ja) |
WO (1) | WO2006117884A1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008047511A1 (fr) * | 2006-10-16 | 2008-04-24 | Mitsui Mining & Smelting Co., Ltd. | MATÉRIAU D'ALLIAGE Al-Ni-B POUR UN FILM RÉFLÉCHISSANT |
JP2010281995A (ja) * | 2009-06-04 | 2010-12-16 | Mitsubishi Electric Corp | 電子デバイス及びその製造方法、並びに電子機器 |
KR101386194B1 (ko) * | 2007-06-22 | 2014-04-18 | 삼성디스플레이 주식회사 | 표시패널 및 이의 제조방법 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8729554B2 (en) * | 2011-04-27 | 2014-05-20 | Chimei Innolux Corporation | Top-emission organic light-emitting diode structure |
JP6473405B2 (ja) * | 2015-10-05 | 2019-02-20 | 浜松ホトニクス株式会社 | 配線構造体の製造方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04333566A (ja) * | 1991-03-26 | 1992-11-20 | Nippon Telegr & Teleph Corp <Ntt> | 薄膜形成法 |
JP2004102150A (ja) * | 2002-09-12 | 2004-04-02 | Sony Corp | 光学mems素子、その作製方法、glvデバイス、及びレーザディスプレイ |
JP2004214606A (ja) * | 2002-12-19 | 2004-07-29 | Kobe Steel Ltd | 表示デバイスおよびその製法、ならびにスパッタリングターゲット |
JP2004322615A (ja) * | 2003-04-28 | 2004-11-18 | Toyo Kohan Co Ltd | 平滑積層体の製造方法および平滑積層体を用いた部品の製造方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5140313A (ja) * | 1974-10-03 | 1976-04-05 | Furukawa Electric Co Ltd | Dohifukuaruminiumugokindotai |
EP1553205B1 (en) * | 1995-10-12 | 2017-01-25 | Kabushiki Kaisha Toshiba | Sputter target for forming thin film interconnector and thin film interconnector line |
JP3755552B2 (ja) * | 1996-07-05 | 2006-03-15 | 株式会社日鉱マテリアルズ | アルミニウムまたはアルミニウム合金スパッタリングターゲット |
JPH10183337A (ja) * | 1996-11-01 | 1998-07-14 | Japan Energy Corp | Al合金薄膜およびAl合金スパッタリングターゲット |
JP2000294556A (ja) * | 1999-04-05 | 2000-10-20 | Hitachi Metals Ltd | ドライエッチング性に優れたAl合金配線膜およびAl合金配線膜形成用ターゲット |
JP4179489B2 (ja) * | 1999-08-11 | 2008-11-12 | 日立金属株式会社 | Al合金電極膜の製造方法 |
JP4405008B2 (ja) * | 1999-10-25 | 2010-01-27 | アルバックマテリアル株式会社 | 液晶ディスプレイ用電極・配線材及びその作製方法 |
JP2003089864A (ja) * | 2001-09-18 | 2003-03-28 | Mitsui Mining & Smelting Co Ltd | アルミニウム合金薄膜及びその薄膜を有する配線回路並びにその薄膜を形成するターゲット材 |
-
2005
- 2005-08-30 WO PCT/JP2005/015697 patent/WO2006117884A1/ja active Application Filing
- 2005-10-18 JP JP2005302871A patent/JP4657882B2/ja not_active Expired - Fee Related
-
2006
- 2006-03-30 CN CN 200680001532 patent/CN100564560C/zh not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04333566A (ja) * | 1991-03-26 | 1992-11-20 | Nippon Telegr & Teleph Corp <Ntt> | 薄膜形成法 |
JP2004102150A (ja) * | 2002-09-12 | 2004-04-02 | Sony Corp | 光学mems素子、その作製方法、glvデバイス、及びレーザディスプレイ |
JP2004214606A (ja) * | 2002-12-19 | 2004-07-29 | Kobe Steel Ltd | 表示デバイスおよびその製法、ならびにスパッタリングターゲット |
JP2004322615A (ja) * | 2003-04-28 | 2004-11-18 | Toyo Kohan Co Ltd | 平滑積層体の製造方法および平滑積層体を用いた部品の製造方法 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008047511A1 (fr) * | 2006-10-16 | 2008-04-24 | Mitsui Mining & Smelting Co., Ltd. | MATÉRIAU D'ALLIAGE Al-Ni-B POUR UN FILM RÉFLÉCHISSANT |
JPWO2008047511A1 (ja) * | 2006-10-16 | 2010-02-18 | 三井金属鉱業株式会社 | 反射膜用Al−Ni−B合金材料 |
US8003218B2 (en) | 2006-10-16 | 2011-08-23 | Mitsui Mining & Smelting Co., Ltd | Al-Ni-B alloy material for reflective film |
KR101386194B1 (ko) * | 2007-06-22 | 2014-04-18 | 삼성디스플레이 주식회사 | 표시패널 및 이의 제조방법 |
JP2010281995A (ja) * | 2009-06-04 | 2010-12-16 | Mitsubishi Electric Corp | 電子デバイス及びその製造方法、並びに電子機器 |
Also Published As
Publication number | Publication date |
---|---|
CN101090985A (zh) | 2007-12-19 |
JP4657882B2 (ja) | 2011-03-23 |
CN100564560C (zh) | 2009-12-02 |
WO2006117884A1 (ja) | 2006-11-09 |
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