JP2006310846A - 半導体用ダイシングダイ接着フィルム - Google Patents
半導体用ダイシングダイ接着フィルム Download PDFInfo
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Abstract
【解決手段】本発明による半導体用ダイシングダイ接着フィルム100は、半導体ウエハーの背面に付着される第1接着層120と、前記第1接着層120に面して接着された第2接着層130と、前記第2接着層130に面して接着されたダイシングフィルム140と、を含んでなる三層の積層構造を有する。
【選択図】図1
Description
(1)ダイシング工程中のダイフライング(die flying)の発生可否、
(2)ダイピックアップの容易性、
(3)ダイボンディングの良好度及び
(4)MRTテスト
を行いその結果を下記表4に示した。
110 ベースフィルム
111 第1保護フィルム
112 ベースフィルム
113 第2保護フィルム
120 第1接着層
130 第2接着層
140 ダイシングフィルム
Claims (5)
- 半導体ウエハーの背面に付着される第1接着層と、
前記第1接着層に面して接着された第2接着層と、
前記第2接着層に面して接着されたダイシングフィルムと、
を含んでなる三層の積層構造を有する半導体用ダイシングダイ接着フィルムであって、
前記半導体用ダイシングダイ接着フィルムは、
(a1)前記半導体ウエハーの背面に前記ダイシングダイ接着フィルムを接着させるラミネート工程と、
(a2)前記ラミネートされた半導体ウエハーの前面を通じた切断作業を行い、ダイ切片に分離するウエハーのダイシング工程と、
(a3)前記ダイシング工程により分離されたダイをピックアップツールを用い第1接着層及び第2接着層はダイの背面に接着された状態を維持するが、ダイシングフィルムは分離されるようにダイピックアップする工程と、
(a4)前記ダイピックアップされたダイを基板に付着させるダイ接着工程と、
(a5)前記基板とダイとの接着力を強化させる熱処理工程とを含んで行う半導体パッケージング工程に用いられ、
前記(a1)のラミネート工程後における、前記半導体ウエハー及び第1接着層の層間接着力(T1)は20gf/cm以上であり、前記第2接着層及びダイシングフィルムの層間接着力(T2)は3gf/cm以上が維持され、
前記(a3)のダイピックアップ工程中における、前記ダイ及び第1接着層の層間接着力(Ta1)が前記第2接着層及びダイシングフィルムの層間接着力(Ta2)より大きく維持され、
前記(a4)のダイ接着工程後における、前記ダイ及び第1接着層の層間接着力(Tb1)と前記第2接着層及び基板の層間接着力(Tb2)とが共に100gf/cmより大きく維持され、
前記(a5)の熱処理工程後における、前記ダイ及び第1接着層の層間接着力(Tc1)と前記第2接着層及び基板の層間接着力(Tc2)とが共に500gf/cmより大きく維持されることを特徴とする半導体用ダイシングダイ接着フィルム。 - 前記(a5)の熱処理工程後における半導体用ダイシングダイ接着フィルムは、25℃での貯蔵弾性率(storage modulus)は100〜10,000MPaであり、280℃での貯蔵弾性率は0.1〜1,000MPaであり、前記280℃での貯蔵弾性率は前記25℃での貯蔵弾性率より小さく維持されることを特徴とする請求項1に記載の半導体用ダイシングダイ接着フィルム。
- 前記半導体用ダイシングダイ接着フィルムを構成する第1接着層と第2接着層との間に、ポリイミド系、ポリオレフィン系、ポリアセタレート系及びポリビニール系からなる物質群より選択された何れか一つまたは二つ以上の物質で製造された有機絶縁層をさらに含むことを特徴とする請求項1または2記載の半導体用ダイシングダイ接着フィルム。
- 前記ダイシングダイ接着フィルムの第1接着層は、20重量%〜70重量%の液状エポキシ樹脂と、30重量%〜80重量%の固状エポキシ樹脂とを含んでなる組成物100重量部に対して、0.5重量部〜15重量部の光重合開始剤と、0.1重量部〜30重量部の無機フィラーとが含まれた第1接着層製造用組成物から製造され、
前記ダイシングダイ接着フィルムの第2接着層は、20重量%〜70重量%の液状エポキシ樹脂と、30重量%〜80重量%の固状エポキシ樹脂とを含んでなる組成物100重量部に対して、0.5重量部〜15重量部の光重合開始剤と、0.1〜30重量部の無機フィラーとが含まれた第2接着層製造用組成物から製造され、
前記第2接着層製造用組成物に含まれた無機フィラーの含量は、前記第1接着層製造用組成物に含まれた無機フィラーの含量より0.1重量部〜15重量部がさらに多く含まれるように組成するか、
前記第2接着層製造用組成物に含まれた液状エポキシ樹脂量に対する固状エポキシ樹脂の含量は、前記第1接着層製造用組成物に含まれた液状エポキシ樹脂量に対する固状エポキシ樹脂量の含量より2重量%〜50重量%がさらに多く含まれるように組成するか、
前記第2接着層製造用組成物に含まれた光重合開始剤の含量は、前記第1接着層製造用組成物に含まれた光重合開始剤の含量より0.1重量部〜15重量部がさらに多く含まれるように組成することを特徴とする請求項1〜3のいずれか1項に記載の半導体用ダイシングダイ接着フィルム。 - 前記液状エポキシ樹脂は、ビスフェノール系エポキシ、ノボラック系エポキシ及び可塑性エポキシからなる物質群より選択された何れか一つまたは二つ以上の物質であり、
前記固状エポキシ樹脂は、ビスフェノール系エポキシ、ノボラック系エポキシ及び可塑性エポキシからなる物質群より選択された何れか一つまたは二つ以上の物質であり、
前記無機フィラーは、金属、金属酸化物及びシリコン系からなる物質群より選択された何れか一つまたは二つ以上の物質であり、
前記光重合開始剤は、α−ヒドロキシケトン系、フェニルグリオキシルレート系、α−アミノケトン系、ベンジルジメチルケタール系、ホスフィンオキシド系及びメタロセン系からなる物質群より選択された何れか一つまたは二つ以上の物質であることを特徴とする請求項4に記載の半導体用ダイシングダイ接着フィルム。
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CN101848974A (zh) * | 2007-12-27 | 2010-09-29 | Lg化学株式会社 | 具有优异的毛刺性能和可靠性的切割模片粘合膜以及应用该粘合膜的半导体器件 |
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US20090146234A1 (en) * | 2007-12-06 | 2009-06-11 | Micron Technology, Inc. | Microelectronic imaging units having an infrared-absorbing layer and associated systems and methods |
KR100963675B1 (ko) * | 2008-03-14 | 2010-06-15 | 제일모직주식회사 | 반도체 패키징용 복합기능 테이프 및 이를 이용한 반도체소자의 제조방법 |
CN102217040B (zh) * | 2008-11-19 | 2013-10-23 | 电气化学工业株式会社 | 电子部件的制造方法 |
JP5356326B2 (ja) * | 2010-07-20 | 2013-12-04 | 日東電工株式会社 | 半導体装置の製造方法 |
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US20070134846A1 (en) * | 2003-10-07 | 2007-06-14 | Nagase & Co. Ltd. | Electronic member fabricating method and ic chip with adhesive material |
KR100590198B1 (ko) * | 2004-03-25 | 2006-06-19 | 엘에스전선 주식회사 | 수축성 이형필름을 갖는 다이싱 필름 및 이를 이용한반도체 패키지 제조방법 |
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JP4597910B2 (ja) * | 2005-06-03 | 2010-12-15 | エルエス ケーブル リミテッド | 半導体用ダイシングダイ接着フィルム |
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