JP2006287152A - Plasma processing device - Google Patents

Plasma processing device Download PDF

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JP2006287152A
JP2006287152A JP2005108385A JP2005108385A JP2006287152A JP 2006287152 A JP2006287152 A JP 2006287152A JP 2005108385 A JP2005108385 A JP 2005108385A JP 2005108385 A JP2005108385 A JP 2005108385A JP 2006287152 A JP2006287152 A JP 2006287152A
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plasma processing
porous plate
plasma
stage
electrode
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JP4654738B2 (en
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Kiyoshi Arita
潔 有田
Akira Nakagawa
顕 中川
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Panasonic Holdings Corp
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Matsushita Electric Industrial Co Ltd
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Priority to JP2005108385A priority Critical patent/JP4654738B2/en
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to EP06731469A priority patent/EP1869692A1/en
Priority to TW095111954A priority patent/TW200701346A/en
Priority to US11/887,758 priority patent/US20090266488A1/en
Priority to PCT/JP2006/307522 priority patent/WO2006107114A1/en
Priority to CN200680010657XA priority patent/CN101151703B/en
Priority to KR1020077021575A priority patent/KR101198543B1/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a plasma processing device for performing a uniform plasma treatment stably by protecting a porosity board constituting a counter electrode from damage, such as a crack at outer boundary part caused by thermal expansion accompanied by a rapid rise of temperature at the plasma treatment step. <P>SOLUTION: The plasma processing device has a stage 31 of a lower electrode 3, an upper electrode 4 opposite to the lower electrode, and a processing chamber 2 in which the lower electrode and the upper electrode 4 are arranged. A gas is fed to a plasma processing space A between the lower electrode and the upper electrode 4 for subjecting a treating object W on the stage 31 to perform plasma processing in the plasma processing device. The upper electrode 4 is composed of a main body unit 41 having a gas feeding opening T, a breathable porous board arranged on a lower side of the main body unit 41 for blocking the gas feeding opening T, and a supporting member 45 for supporting an outer edge of a porous board 43. At an outer boundary part of the porous board 43, each slit S is formed at intervals for absorbing distortion caused by thermal expansion at the plasma processing. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は、ウェハなどの処理対象物をプラズマ処理するプラズマ処理装置に関するものである。   The present invention relates to a plasma processing apparatus for plasma processing a processing object such as a wafer.

ウェハなどの処理対象物の表面処理を行う装置として、プラズマ処理装置が知られている。プラズマ処理装置は、減圧雰囲気下でプラズマを発生させ、このプラズマの物理的・化学的作用により処理対象物表面のエッチング処理などを行うものである。プラズマは、プラズマ処理装置の密閉された処理室内を所定圧力に減圧してプラズマ発生用ガス（以下、単に「ガス」と略記する）を供給した状態で、処理室内の上部電極又は下部電極に高周波電圧を印加することにより発生する。   A plasma processing apparatus is known as an apparatus for performing a surface treatment of a processing object such as a wafer. The plasma processing apparatus generates plasma under a reduced pressure atmosphere, and performs an etching process or the like on the surface of a processing object by the physical and chemical action of the plasma. Plasma is a high-frequency voltage applied to an upper electrode or a lower electrode in a processing chamber in a state where a sealed processing chamber of the plasma processing apparatus is depressurized to a predetermined pressure and a plasma generating gas (hereinafter simply referred to as “gas”) is supplied. Generated by applying a voltage.

このようなプラズマ処理においては、処理目的によっては高密度のプラズマを発生させることが望ましい場合がある。例えばウェハなどのシリコン基板を対象としたプラズマエッチングを行う場合は、処理効率を向上させる目的で、比較的高い圧力のガスをシリコンウェハの表面に対して均一に吹き付けて供給する方法が用いられる。   In such plasma processing, it may be desirable to generate high-density plasma depending on the processing purpose. For example, when performing plasma etching on a silicon substrate such as a wafer, a method is used in which a relatively high pressure gas is uniformly blown and supplied to the surface of the silicon wafer in order to improve processing efficiency.

このようなプラズマ処理に適した平行平板型の電極部材として、セラミックス粒子の焼結体である通気性の多孔質板から成るものが知られている（特許文献１，２，３）。このような多孔質板から成る電極部材を用いれば、高密度のプラズマを均一に発生させて安定したプラズマ処理をエッチング効率よく行うことができる。
特開２００２−２３１６３８号公報 特開２００３−７６８２号公報 特開２００３−２８２４６２号公報 As a parallel plate type electrode member suitable for such plasma processing, a member made of a breathable porous plate, which is a sintered body of ceramic particles, is known (Patent Documents 1, 2, and 3). If an electrode member made of such a porous plate is used, a high-density plasma can be uniformly generated and a stable plasma treatment can be performed with good etching efficiency.
JP 2002-231638 A Japanese Patent Laid-Open No. 2003-7682 JP 2003-282462 A

処理室内の下部電極であるステージ上に処理対象物を載置し、上部電極又は下部電極に高周波電圧を印加してプラズマ処理を開始すると、下部電極の対向電極である上部電極側の多孔質板は急激に温度上昇する。代表的な多孔質板の直径は２２０ｍｍ又は３２０ｍｍ程度であり、またその厚さは２〜１０ｍｍ程度であるが、多孔質板はその全体が均一に温度上昇せず、ステージに対向する対向面（通常は下面）の中央部付近が先ず急激に温度上昇し（代表的には、約３０秒間で常温から２００℃程度まで急上昇）、多孔質板の外縁部は中央部付近よりも遅れながら緩やかに温度上昇する。このため、多孔質板には不均一な温度上昇にともなうひずみが生じ、多孔質板はその外縁部にクラック（多孔質板は一般に円板であるから、外周縁部に半径方向のクラック）が発生し、割れるなどして破損してしまうという問題点があった。   When a processing object is placed on a stage, which is a lower electrode in a processing chamber, and a plasma treatment is started by applying a high frequency voltage to the upper electrode or the lower electrode, a porous plate on the upper electrode side that is the counter electrode of the lower electrode Suddenly rises in temperature. A typical porous plate has a diameter of about 220 mm or 320 mm and a thickness of about 2 to 10 mm. However, the entire porous plate does not rise in temperature uniformly and faces the stage ( Usually, the temperature near the center of the lower surface first suddenly rises (typically, it suddenly rises from room temperature to about 200 ° C. in about 30 seconds), and the outer edge of the porous plate gradually lags behind the center. The temperature rises. As a result, the porous plate is distorted due to uneven temperature rise, and the porous plate has cracks on the outer edge thereof (the porous plate is generally a circular plate, so the outer peripheral edge is radially cracked). There was a problem that it breaks and breaks.

そこで本発明は、プラズマ処理時の急激な温度上昇にともなう熱膨張のために外縁部にクラックが発生するなどして多孔質板が破損するのを防止して、均一で安定したプラズマ処理を行うことができるプラズマ処理装置を提供することを目的とする。   In view of this, the present invention performs uniform and stable plasma processing by preventing the porous plate from being damaged due to, for example, cracks at the outer edge due to thermal expansion accompanying rapid temperature rise during plasma processing. It is an object of the present invention to provide a plasma processing apparatus that can perform the above processing.

請求項１記載のプラズマ処理装置は、下部電極であるステージと、このステージの上方にあってこのステージに対向する上部電極である対向電極と、このステージと対向電極が配設される処理室とを備え、前記ステージと前記対向電極の間のプラズマ処理空間にプラズマ発生用ガスを供給してプラズマを発生させて前記ステージに載置された処理対象物の
プラズマ処理を行うプラズマ処理装置であって、前記対向電極が、ガス供給口が形成された本体部と、このガス供給口を塞ぐようにこの本体部の下側に配設された通気性の多孔質板と、この多孔質板の外縁部を支持する支持部材とを備え、前記多孔質板の前記外縁部にその厚み方向に貫通するスリットをピッチをおいて複数形成した。 The plasma processing apparatus according to claim 1, a stage that is a lower electrode, a counter electrode that is an upper electrode that is above the stage and faces the stage, and a processing chamber in which the stage and the counter electrode are disposed, A plasma processing apparatus for supplying a plasma generating gas to a plasma processing space between the stage and the counter electrode to generate plasma to perform plasma processing on a processing object placed on the stage. The counter electrode includes a main body portion in which a gas supply port is formed, a breathable porous plate disposed under the main body portion so as to close the gas supply port, and an outer edge of the porous plate. A plurality of slits penetrating in the thickness direction in the outer edge portion of the porous plate at a pitch.

請求項２記載のプラズマ処理装置は、請求項１記載のプラズマ処理装置において、前記支持部材は前記多孔質板をその内部に収納する収納体であって、内方へ突出する突出部を備え、この突出部により前記多孔質板の前記外縁部を下方から支持する。   The plasma processing apparatus according to claim 2 is the plasma processing apparatus according to claim 1, wherein the support member is a storage body that stores the porous plate therein, and includes a protruding portion that protrudes inward. The protrusion supports the outer edge of the porous plate from below.

請求項３記載のプラズマ処理装置は、請求項１記載のプラズマ処理装置において、前記突出部は、前記支持部材に収納された前記多孔質板の前記スリットよりも内方へ張り出して前記スリットを閉塞する。   The plasma processing apparatus according to claim 3 is the plasma processing apparatus according to claim 1, wherein the protruding portion protrudes inward from the slit of the porous plate housed in the support member to close the slit. To do.

本発明によれば、プラズマ処理を開始すると多孔質板はステージの対向面の中央部付近から急激に温度上昇し、特に外縁部には温度上昇にともなうひずみが生じるが、このひずみはスリットに吸収されるので多孔質板は破損せず、安定したプラズマ処理を行うことができる。またスリットを支持部材で閉塞することにより、スリットからのガス漏れを防止し、処理空間全体に均一で安定したプラズマを発生させることができる。   According to the present invention, when the plasma treatment is started, the temperature of the porous plate suddenly rises from the vicinity of the central portion of the opposite surface of the stage, and in particular, the strain at the outer edge is caused by the temperature rise, and this strain is absorbed by the slit. Therefore, the porous plate is not damaged and stable plasma treatment can be performed. Further, by closing the slit with the support member, gas leakage from the slit can be prevented, and uniform and stable plasma can be generated in the entire processing space.

図１は本発明の一実施の形態におけるプラズマ処理装置の断面図、図２は本発明の一実施の形態における多孔質板の斜視図、図３は本発明の一実施の形態における多孔質板が収納された支持部材の斜視図、図４は本発明の一実施の形態における上部電極部の部分拡大断面図である。   1 is a cross-sectional view of a plasma processing apparatus according to an embodiment of the present invention, FIG. 2 is a perspective view of a porous plate according to an embodiment of the present invention, and FIG. 3 is a porous plate according to an embodiment of the present invention. FIG. 4 is a partially enlarged cross-sectional view of the upper electrode portion in one embodiment of the present invention.

まず図１を参照してプラズマ処理装置について説明する。図１において、真空チャンバ１の内部はプラズマ処理を行う処理室２となっており、処理室２の内部には、下部電極３および上部電極４が上下に対向して配設されて平行平板型のプラズマ処理装置を構成している。   First, the plasma processing apparatus will be described with reference to FIG. In FIG. 1, the inside of a vacuum chamber 1 is a processing chamber 2 for performing plasma processing, and a lower electrode 3 and an upper electrode 4 are disposed in the processing chamber 2 so as to face each other in a vertical plate manner. The plasma processing apparatus is configured.

下部電極３は、高周波電極であるステージ３１とその中央部から下方へ突出する突出部３２から構成されており、ステージ３１の外縁部に配設された絶縁部材３３を介して真空チャンバ１の内部に装着されている。下部電極３の突出部３２には高周波電源部５が接続されている。絶縁部材３３の側部には排気路６が形成されており、真空ポンプなどの排気ユニット７により処理室２内を真空吸引する。ステージ３１上には、ウェハなどの処理対象物Ｗが載置される。   The lower electrode 3 is composed of a stage 31 that is a high-frequency electrode and a protrusion 32 that protrudes downward from the center thereof, and the interior of the vacuum chamber 1 is interposed via an insulating member 33 disposed on the outer edge of the stage 31. It is attached to. A high frequency power supply unit 5 is connected to the protrusion 32 of the lower electrode 3. An exhaust path 6 is formed at the side of the insulating member 33, and the inside of the processing chamber 2 is vacuumed by an exhaust unit 7 such as a vacuum pump. A processing object W such as a wafer is placed on the stage 31.

対向電極である上部電極４は、平板（円板）状の本体部４１と、本体部４１の下面外周部に設けられた環状の支持部材４５と、本体部４１の下側の支持部材４５の内部に収納された多孔質板４３から構成されており、本体部４１の中央部から上方へ突出する突出部４２を介して真空チャンバ１に装着されている。この多孔質板４３は、上記引用文献１〜３に記載されたものと同様のセラミックス粒子の焼結体から成る通気性のものである。支持部材４５には、その内壁下部から内方（中心部側）へ突出する突出部４５’が突設されており、多孔質板４３はその外縁部（本実施の形態の多孔質板４３は円板であるから、外周縁部）を突出部４５’上に載せて本体部４１と支持部材４５で形成される内部空間に収納されている。   The upper electrode 4, which is a counter electrode, includes a flat plate (disk) -shaped main body 41, an annular support member 45 provided on the outer periphery of the lower surface of the main body 41, and a support member 45 below the main body 41. It is composed of a porous plate 43 housed inside, and is attached to the vacuum chamber 1 via a protruding portion 42 that protrudes upward from the central portion of the main body portion 41. The porous plate 43 is a gas-permeable material made of a sintered body of ceramic particles similar to that described in the above cited documents 1 to 3. The support member 45 is provided with a protruding portion 45 ′ protruding inward (center side) from the inner wall lower portion, and the porous plate 43 has an outer edge portion (the porous plate 43 of the present embodiment is Since it is a disc, the outer peripheral edge portion) is placed on the protruding portion 45 ′ and accommodated in an internal space formed by the main body portion 41 and the support member 45.

図２および図３において、上部電極４側に設けられた多孔質板４３は円板状であり、その外周縁部にはピッチをおいてスリットＳが多孔質板４３の半径方向を長手方向にして多
孔質板４３をその厚み方向（上下方向）に貫通して形成されている。多孔質板４３の直径が２２０ｍｍ又は３２０ｍｍ程度の場合、スリットＳの長さＬ１は望ましくは３〜１０ｍｍ程度、巾Ｌ２は０．５ｍｍ〜１．０ｍｍ程度であり、また望ましくは、スリットＳは１２０ｍｍ以下のピッチＬ３で形成されている。 2 and 3, the porous plate 43 provided on the upper electrode 4 side has a disk shape, and the slits S are arranged at a pitch at the outer peripheral edge portion so that the radial direction of the porous plate 43 is the longitudinal direction. The porous plate 43 is formed so as to penetrate in the thickness direction (vertical direction). When the diameter of the porous plate 43 is about 220 mm or 320 mm, the length L1 of the slit S is preferably about 3 to 10 mm, the width L2 is about 0.5 mm to 1.0 mm, and preferably the slit S is 120 mm. It is formed with the following pitch L3.

図４は、本体部４１と支持部材４５と多孔質板４３の望ましい結合構造を示している。支持部材４５は本体部４１にボルト１０やナット１１などの止具により結合されている。突出部４５’の上面ａは内方へ向って下り勾配のテーパ面であり、また多孔質板４３の外周縁部下面ｂは外方へ向って上り勾配のテーパ面であり、上面ａと下面ｂはすき間を生じないようにぴったり接合している。また突出部４５’はスリットＳよりも内方（中心部側）まで延出しており、したがってスリットＳの下面側は突出部４５’に閉塞されており、これにより本体部４１の下面側のガス供給口Ｔ（後述）の気密性を保持し、ガス供給口Ｔに供給されたガスがスリットＳからプラズマ発生空間Ａにガスが漏れないようにしている。   FIG. 4 shows a desirable coupling structure of the main body 41, the support member 45, and the porous plate 43. The support member 45 is coupled to the main body 41 by a fastener such as a bolt 10 or a nut 11. The upper surface a of the protrusion 45 ′ is an inwardly tapered surface that is downwardly inclined, and the outer peripheral edge lower surface b of the porous plate 43 is an outwardly tapered surface that is inclined upwardly. b is tightly joined so as not to generate a gap. Further, the protrusion 45 ′ extends inward (center side) from the slit S, and therefore, the lower surface side of the slit S is closed by the protrusion 45 ′. The gas tightness of the supply port T (described later) is maintained, and the gas supplied to the gas supply port T is prevented from leaking from the slit S to the plasma generation space A.

多孔質板４３の外周縁部近くの上面は外方へ向って下り勾配のテーパ面ｃになっており、多孔質板４３の外周縁部近くの本体部４１との間には緩衝部材１２が配設されている。この緩衝部材１２は、樹脂ゴム等の弾性材から成っており、平面視してリング状であり、本体部４１の下面側の多孔質板４３との間の狭いガス流通空間であるガス供給口Ｔの気密性を確保している。   The upper surface of the porous plate 43 near the outer peripheral edge is a downwardly tapered surface c, and the buffer member 12 is interposed between the porous plate 43 and the main body 41 near the outer peripheral edge. It is arranged. The buffer member 12 is made of an elastic material such as resin rubber, has a ring shape in plan view, and is a gas supply port that is a narrow gas flow space between the lower surface side of the main body 41 and the porous plate 43. T-tightness is secured.

図１において、本体部４１および突出部４２にはこれらを上下に貫通するガス供給路４６が形成されている。本体部４１はアース部４４にアースされている。ガス供給部１３のガスは、ガス供給路４６からガス供給口Ｔへ供給され、多孔質板４３内を通過して下部電極３と上部電極４の間のプラズマ発生空間（プラズマ処理空間）Ａに供給される。なお本実施の形態では上部電極４をアースしているが、下部電極３をアースし、上部電極４を高周波電源に接続するようにしてもよい。   In FIG. 1, a gas supply path 46 is formed in the main body portion 41 and the protruding portion 42 so as to penetrate up and down. The main body portion 41 is grounded to the ground portion 44. The gas in the gas supply unit 13 is supplied from the gas supply path 46 to the gas supply port T, passes through the porous plate 43, and enters a plasma generation space (plasma processing space) A between the lower electrode 3 and the upper electrode 4. Supplied. Although the upper electrode 4 is grounded in this embodiment, the lower electrode 3 may be grounded and the upper electrode 4 may be connected to a high frequency power source.

このプラズマ処理装置は上記のような構成より成り、次に動作を説明する。処理対象物Ｗをステージ３１に載置した状態で、排気ユニット７を作動させて処理室２内を減圧する。処理室２内が所定圧力に減圧されたならば、ガス供給部１３からガス供給口Ｔにガスを供給し、多孔質板４３内を通過させて両電極３，４の間のプラズマ発生空間Ａへ送出する。この状態で下部電極３に高周波電圧が印加されるとプラズマ発生空間Ａでプラズマが発生し、処理対象物Ｗはプラズマエッチングなどの表面処理が行われる。   This plasma processing apparatus has the above configuration, and the operation will be described next. In a state where the processing object W is placed on the stage 31, the exhaust unit 7 is operated to decompress the inside of the processing chamber 2. If the inside of the processing chamber 2 is depressurized to a predetermined pressure, a gas is supplied from the gas supply unit 13 to the gas supply port T and passes through the porous plate 43 to generate a plasma generation space A between the electrodes 3 and 4. To send. When a high frequency voltage is applied to the lower electrode 3 in this state, plasma is generated in the plasma generation space A, and the processing target W is subjected to surface treatment such as plasma etching.

上述のようにプラズマ処理を開始すると、プラズマ発生空間Ａは急激に温度上昇し、多孔質板４３は下部電極３に対向する対向面（下面）の中央部付近から急激に温度上昇する。この温度上昇にともなう熱膨張のために、多孔質板４３は特にその外周縁部にひずみを生じるが、このひずみはスリットＳに吸収されるので、外周縁部にはガス漏れの原因となるクラックは発生せず、均一で安定したプラズマ処理が行われる。   When the plasma processing is started as described above, the temperature of the plasma generation space A rapidly rises, and the temperature of the porous plate 43 suddenly rises from the vicinity of the center portion of the facing surface (lower surface) facing the lower electrode 3. Due to the thermal expansion associated with this temperature rise, the porous plate 43 is distorted particularly at its outer peripheral edge, but since this strain is absorbed by the slit S, cracks that cause gas leakage at the outer peripheral edge. Is not generated, and a uniform and stable plasma treatment is performed.

本発明によれば、プラズマ処理時には急激な温度上昇にともなう熱膨張のために多孔質板の外縁部にひずみを生じるが、このひずみはスリットに吸収されるので、外縁部にクラックが発生するなどして多孔質板が破損することはなく、したがって安定したプラズマ処理を行うことができ、特にウェハなどの表面エッチングのためのプラズマ処理装置として有用である。   According to the present invention, a distortion occurs in the outer edge portion of the porous plate due to thermal expansion accompanying a rapid temperature rise during the plasma treatment, but this distortion is absorbed by the slit, so that a crack occurs in the outer edge portion, etc. Thus, the porous plate is not damaged, so that stable plasma processing can be performed, and it is particularly useful as a plasma processing apparatus for surface etching of a wafer or the like.

本発明の一実施の形態におけるプラズマ処理装置の断面図Sectional drawing of the plasma processing apparatus in one embodiment of this invention 本発明の一実施の形態における多孔質板の斜視図The perspective view of the porous board in one embodiment of this invention 本発明の一実施の形態における多孔質板が収納された支持部材の斜視図The perspective view of the supporting member in which the porous board in one embodiment of this invention was accommodated 本発明の一実施の形態における上部電極部の部分拡大断面図The partial expanded sectional view of the upper electrode part in one embodiment of this invention

符号の説明Explanation of symbols

１ 真空チャンバ
２ 処理室
３ 下部電極
４ 上部電極（対向電極）
３１ ステージ
４１ 本体部
４３ 多孔質板
４５ 支持部材
４５’ 突出部
Ａ プラズマ発生空間（プラズマ処理空間）
Ｓ スリット
Ｔ ガス供給口
Ｗ 処理対象物 1 Vacuum chamber 2 Processing chamber 3 Lower electrode 4 Upper electrode (counter electrode)
31 Stage 41 Body 43 Porous plate 45 Support member 45 'Protrusion A Plasma generation space (plasma processing space)
S Slit T Gas supply port W Object to be treated

Claims (3)

下部電極であるステージと、このステージの上方にあってこのステージに対向する上部電極である対向電極と、このステージと対向電極が配設される処理室とを備え、前記ステージと前記対向電極の間のプラズマ処理空間にプラズマ発生用ガスを供給してプラズマを発生させて前記ステージに載置された処理対象物のプラズマ処理を行うプラズマ処理装置であって、
前記対向電極が、ガス供給口が形成された本体部と、このガス供給口を塞ぐようにこの本体部の下側に配設された通気性の多孔質板と、この多孔質板の外縁部を支持する支持部材とを備え、前記多孔質板の前記外縁部にその厚み方向に貫通するスリットをピッチをおいて複数形成したことを特徴とするプラズマ処理装置。 A stage that is a lower electrode; a counter electrode that is an upper electrode that is above the stage and faces the stage; and a processing chamber in which the stage and the counter electrode are disposed. A plasma processing apparatus for generating a plasma by supplying a plasma generating gas to a plasma processing space in between to perform plasma processing of a processing object placed on the stage,
The counter electrode includes a main body portion in which a gas supply port is formed, a breathable porous plate disposed on the lower side of the main body portion so as to close the gas supply port, and an outer edge portion of the porous plate. And a plurality of slits penetrating in the thickness direction in the outer edge portion of the porous plate at a pitch. 前記支持部材は前記多孔質板をその内部に収納する収納体であって、内方へ突出する突出部を備え、この突出部により前記多孔質板の前記外縁部を下方から支持することを特徴とする請求項１記載のプラズマ処理装置。   The support member is a storage body that stores the porous plate therein, and includes a protruding portion that protrudes inward, and the protruding portion supports the outer edge portion of the porous plate from below. The plasma processing apparatus according to claim 1. 前記突出部は、前記支持部材に収納された前記多孔質板の前記スリットよりも内方へ張り出して前記スリットを閉塞することを特徴とする請求項２記載のプラズマ処理装置。   The plasma processing apparatus according to claim 2, wherein the protruding portion projects inward from the slit of the porous plate housed in the support member and closes the slit.
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