JP2006278505A5 - - Google Patents
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- JP2006278505A5 JP2006278505A5 JP2005092444A JP2005092444A JP2006278505A5 JP 2006278505 A5 JP2006278505 A5 JP 2006278505A5 JP 2005092444 A JP2005092444 A JP 2005092444A JP 2005092444 A JP2005092444 A JP 2005092444A JP 2006278505 A5 JP2006278505 A5 JP 2006278505A5
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- carbon nanotube
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本発明に係るカーボンナノチューブの製造方法は、基板の上にカーボンナノチューブが配置された状態とする工程と、カーボンナノチューブに電子線が照射された状態としてカーボンナノチューブのバンドギャップが電子線の照射前より広くなるなど照射前から変化した状態とする工程とを少なくとも備えるようにしたものである。このように電子線を照射することで、カーボンナノチューブの電気的特性が変更される。 The method for producing carbon nanotubes according to the present invention comprises a step of placing carbon nanotubes on a substrate, and a state in which the carbon nanotubes are irradiated with an electron beam, so that the band gap of the carbon nanotubes is before the irradiation of the electron beams. And a step of changing the state before irradiation such as widening. By irradiating the electron beam in this way, the electrical characteristics of the carbon nanotube are changed.
また、本発明に係るトランジスタの製造方法は、基板の上にチャネルとなるカーボンナノチューブが配置された状態とする工程と、基板の上にカーボンナノチューブに接続するソース電極及びドレイン電極が形成された状態とする工程と、カーボンナノチューブに電界を印加するゲート電極が形成された状態とする工程と、カーボンナノチューブに電子線が照射された状態としてカーボンナノチューブのバンドギャップが電子線の照射前より広くなるなど照射前から変化した状態とする工程とを少なくとも備えるようにしたものである。従って、配置されたカーボンナノチューブが金属的な電気伝導性を備えるものであっても、電子線の照射により半導体的な電気伝導性を備える状態となる。また、カーボンナノチューブが、半導体的な電気伝導性を備えていれば、電子線の照射によりバンドギャップがより広くなり、半導体の特性が変更される。 The transistor manufacturing method according to the present invention includes a step in which carbon nanotubes serving as channels are disposed on a substrate, and a state in which a source electrode and a drain electrode connected to the carbon nanotubes are formed on the substrate. The step of forming a gate electrode for applying an electric field to the carbon nanotube, and the state in which the carbon nanotube is irradiated with the electron beam, the band gap of the carbon nanotube becomes wider than before the irradiation of the electron beam. And at least a step of changing the state from before irradiation . Therefore, even if the arranged carbon nanotubes have metallic electrical conductivity, they are in a state having semiconducting electrical conductivity by irradiation with an electron beam. Further, if the carbon nanotube has semiconducting electrical conductivity, the band gap becomes wider by irradiation with an electron beam, and the characteristics of the semiconductor are changed.
Claims (2)
前記カーボンナノチューブに電子線が照射された状態として前記カーボンナノチューブのバンドギャップが電子線の照射前から変化した状態とする工程と
を少なくとも備えることを特徴とするカーボンナノチューブの製造方法。 A step of placing the carbon nanotubes on the substrate;
And a step of changing the band gap of the carbon nanotube from that before the irradiation with the electron beam as a state in which the carbon nanotube is irradiated with the electron beam.
前記基板の上に前記カーボンナノチューブに接続するソース電極及びドレイン電極が形成された状態とする工程と、
前記カーボンナノチューブに電界を印加するゲート電極が形成された状態とする工程と、
前記カーボンナノチューブに電子線が照射された状態として前記カーボンナノチューブのバンドギャップが電子線の照射前から変化した状態とする工程と
を少なくとも備えることを特徴とするトランジスタの製造方法。 A step of placing carbon nanotubes serving as channels on a substrate; and
Forming a source electrode and a drain electrode connected to the carbon nanotube on the substrate; and
A step of forming a gate electrode for applying an electric field to the carbon nanotube;
And a step of changing the band gap of the carbon nanotube from that before irradiation with the electron beam as a state in which the carbon nanotube is irradiated with the electron beam.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005092444A JP4627206B2 (en) | 2005-03-28 | 2005-03-28 | Manufacturing method of nanotube transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005092444A JP4627206B2 (en) | 2005-03-28 | 2005-03-28 | Manufacturing method of nanotube transistor |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006278505A JP2006278505A (en) | 2006-10-12 |
| JP2006278505A5 true JP2006278505A5 (en) | 2007-03-15 |
| JP4627206B2 JP4627206B2 (en) | 2011-02-09 |
Family
ID=37212983
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005092444A Expired - Fee Related JP4627206B2 (en) | 2005-03-28 | 2005-03-28 | Manufacturing method of nanotube transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4627206B2 (en) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100877690B1 (en) | 2006-12-05 | 2009-01-08 | 한국전자통신연구원 | Manufacturing method of nano-wire array device |
| US7846786B2 (en) | 2006-12-05 | 2010-12-07 | Korea University Industrial & Academic Collaboration Foundation | Method of fabricating nano-wire array |
| JP4666270B2 (en) * | 2006-12-18 | 2011-04-06 | 日本電気株式会社 | Semiconductor device and manufacturing method thereof |
| JP4988369B2 (en) * | 2007-02-05 | 2012-08-01 | 日本電信電話株式会社 | Method for manufacturing carbon nanotube transistor |
| US8421129B2 (en) | 2007-04-16 | 2013-04-16 | Nec Corporation | Semiconductor device using carbon nanotubes for a channel layer and method of manufacturing the same |
| US9174847B2 (en) * | 2008-05-01 | 2015-11-03 | Honda Motor Co., Ltd. | Synthesis of high quality carbon single-walled nanotubes |
| CN108020573B (en) * | 2016-10-31 | 2019-12-17 | 清华大学 | Method for distinguishing carbon nanotube types |
| CN108023016B (en) * | 2016-10-31 | 2020-07-10 | 清华大学 | Preparation method of thin film transistor |
| CN108017048B (en) * | 2016-10-31 | 2020-01-07 | 清华大学 | Method for producing semiconductor layer |
| CN113130620B (en) * | 2020-01-15 | 2023-07-18 | 清华大学 | Field effect transistor |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004347532A (en) * | 2003-05-23 | 2004-12-09 | Japan Science & Technology Agency | Biosensor |
| US20050036905A1 (en) * | 2003-08-12 | 2005-02-17 | Matsushita Electric Works, Ltd. | Defect controlled nanotube sensor and method of production |
| EP1508926A1 (en) * | 2003-08-19 | 2005-02-23 | Hitachi, Ltd. | Nanotube transistor device |
-
2005
- 2005-03-28 JP JP2005092444A patent/JP4627206B2/en not_active Expired - Fee Related
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